Claims
- 1. A photocathode comprising a UV glass substrate having one surface adapted to receive incident UV rays, an alkali-metal containing layer containing an alkali metal, and a Group III-V nitride semiconductor layer interposed between said UV glass substrate and said alkali-metal containing layer and adapted to release electrons in response to incidence of the ultraviolet rays.
- 2. A photocathode as recited in claim 1, wherein said alkali-metal containing layer comprises at least one member selected from the group consisting of Cs—O, Cs—I, Cs—Te, Sb—Cs, Sb—Rb—Cs, Sb—K—Cs, Sb—Na—K, Sb—Na—K—Cs and Ag—O—Cs.
- 3. A photocathode as recited in claim 2, wherein said Group III-V nitride semiconductor layer comprises at least one member selected from the group consisting of GaN, GaAlN, GaInN and GaAlInN.
RELATED APPLICATION
1. This is a continuation-in-part application of application serial no. PCT/JP98/02837 filed on Jun. 25, 1998, now pending.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
PCT/JP98/02837 |
Jun 1998 |
US |
Child |
09741826 |
Dec 2000 |
US |