Patent Application
20250080873
The present disclosure relates to a photoelectric conversion apparatus, a photoelectric conversion system including the photoelectric conversion apparatus, and a movable body including the photoelectric conversion apparatus.
Photoelectric conversion apparatuses in which pixels including a plurality of avalanche photodiodes (hereinafter, APDs) are disposed is known. Avalanche multiplication caused by photocharges generated by photon incidence on the APD is utilized to execute single photon level photodetection in each pixel.
Japanese Patent Application Laid-Open Publication No. 2020-123847 discusses a photodetection apparatus that has a charge unit between a cathode of an APD and a supply line of a source voltage to switch state between a charge state and a standby state which is to wait for photon incidence.
In Japanese Patent Application Laid-Open Publication No. 2020-123847, sufficient consideration has not been made on a phenomenon that occurs in the standby state in which the charge unit and a power source are disconnected.
According to an aspect of the present disclosure, a photoelectric conversion apparatus includes an avalanche photodiode having a first terminal and a second terminal, a first power source connected to the first terminal, a second power source connected to the second terminal, a charge unit configured to control a voltage of the first terminal, a voltage control unit connected to the first terminal and configured to control a voltage of the first terminal in accordance with a voltage of the first terminal, and a third power source connected with the voltage control unit.
The present disclosure is directed to providing a photoelectric conversion apparatus that addresses an issue that occurs in a standby state in which a charge unit and a power source are disconnected.
Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
The embodiments described below are intended to embody the technical idea of the present invention and how to carry it into effect and should be considered to not limit the present invention. The size and positional relationship of members shown in the drawings may be exaggerated for clarity of description. In the following description, the same components are denoted by the same reference numerals, and the redundant description may be omitted.
In the following description, terms indicating specific directions and positions (for example, “upper”, “lower”, “right”, “left”, and other terms including these terms) are used as necessary, and these terms are used to facilitate understanding of the embodiments with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of these terms.
In the specification, a planar view refers to a view in a direction perpendicular to a light incident surface of a semiconductor layer. A cross-sectional view refers to a view from a surface in a direction perpendicular to the light incident surface. In a case where the light incident surface of the semiconductor layer is a rough surface when viewed microscopically, a planar view is defined based on the light incident surface of the semiconductor layer when viewed macroscopically.
In the following descriptions, the anode of an avalanche photodiode (APD) is at a fixed potential, and a signal is extracted from the cathode side. Thus, a semiconductor region of a first conductivity type in which charges having the same polarity as that of signal charges are majority carriers is an N-type semiconductor region, and a semiconductor region of a second conductivity type in which charges having a polarity different from that of the signal charges are majority carriers is a P-type semiconductor region.
Even in a case where the cathode of the APD is at a fixed potential, and a signal is extracted from the anode side, the present invention holds true. In this case, a semiconductor region of the first conductivity type in which charges having the same polarity as that of signal charges are majority carriers is a P-type semiconductor region, and a semiconductor region of the second conductivity type in which charges having a polarity different from that of the signal charges are majority carriers is an N-type semiconductor region. While a description is given below of a case where one of the nodes of the APD is at a fixed potential, the potentials of both nodes may be variable.
In this specification, the term “impurity concentration” means a net impurity concentration obtained by subtracting compensation by impurities of the opposite conductivity type. That is, an “impurity concentration” refers to a net doping concentration. A region where a P-type additive impurity concentration is higher than an N-type additive impurity concentration is a P-type semiconductor region. Conversely, a region where an N-type additive impurity concentration is higher than a P-type additive impurity concentration is an N-type semiconductor region.
In the following embodiments, connection between elements of a circuit may be described, and even when another element is interposed between elements of interest, the elements of interest are regarded as being connected to each other unless otherwise specified. For example, an element A is connected to one node of a capacitor C having a plurality of nodes, and an element B is connected to a different node of the capacitor C. Even in such a case, the elements A and B are regarded as being connected to each other unless otherwise specified.
Hereinafter, the sensor substrate 11 and the circuit substrate 21 will be described as singulated chips, but the sensor substrate 11 and the circuit substrate 21 are not limited to chips. For example, each substrate may be a wafer. Each substrate may be singulated after being stacked in a wafer state, or may be singulated into chips from the wafer state and then jointed by stacking the chips.
A pixel region 12 is on the sensor substrate 11, and a circuit region 22 in which signals detected in the pixel region 12 are processed is on the circuit substrate 21.
Typically, the pixel 101 is a pixel for forming an image. In a case where the pixel 101 is used in a time of flight (TOF) sensor, an image may not to be formed. In other words, the pixel 101 may be a pixel for measuring a light reached time and for measuring a light amount.
The photoelectric conversion unit 102 illustrated in
The vertical scanning circuit unit 110 receives a control pulse supplied from the control pulse generation unit 115, and supplies the control pulse to each pixel. A logic circuit, such as a shift register or an address decoder, is used as the vertical scanning circuit unit 110.
A signal output from the photoelectric conversion unit 102 of a pixel is processed by the signal processing unit 103. A counter and a memory are disposed in the signal processing unit 103, and a digital value is stored in the memory.
The horizontal scanning circuit unit 111 inputs, to the signal processing unit 103, a control pulse for a sequential selection of each column to read out a signal from the memory of each pixel that stores a digital signal.
A signal is output to the signal line 113 from the signal processing unit 103 of a pixel on a selected column that has been selected by the vertical scanning circuit unit 110.
The signal output to the signal line 113 is output via an output circuit 114 to a recording unit or a signal processing unit that is disposed outside the photoelectric conversion apparatus 100.
In
The function of the signal processing unit may be not included in each of all photoelectric conversion units. For example, one signal processing unit may be shared by a plurality of photoelectric conversion units, and signal processing may be sequentially performed.
As illustrated in
In
The APD 201 generates a charge pair corresponding to incident light, by photoelectric conversion. The APD 201 includes a first terminal and a second terminal, a first power source is connected to the first terminal, and a second power source is connected to the second terminal. In
In a case where the reverse bias voltage is supplied, an APD is operated in Geiger mode or Linear mode. In Geiger mode, an APD is operated with an anode-cathode potential difference that is larger than a breakdown voltage. In Linear mode, an APD is operated with an anode-cathode potential difference that is near a breakdown voltage, or with a voltage difference equal to or smaller than the breakdown voltage.
An APD operated in Geiger mode will be referred to as a single photon avalanche photodiode (SPAD). For example, the voltage VL is −30 V and the voltage VH is 1 V to 3 V. The APD 201 may be operated in Linear mode, or may be operated in Geiger mode.
A quench element 202 serving as a charge unit is connected to the APD 201 and a power source that supplies the voltage VH. The quench element 202 functions as a load circuit (quench circuit) when a signal is multiplied by avalanche multiplication, and has a function of suppressing avalanche multiplication by reducing a voltage to be supplied to the APD 201 (quench operation). The quench element 202 also has a function of returning a voltage to be supplied to the APD 201, to the voltage VH by flowing a current by an amount corresponding to a voltage drop caused by the quench operation (recharge operation). In this manner, the charge unit has a function of controlling the voltage of the APD 201.
The signal processing unit 103 includes a waveform shaping unit 210, a counter circuit 211, and a selection circuit 212.
In this specification, the signal processing unit 103 is not particularly limited as long as the signal processing unit 103 includes any of the waveform shaping unit 210, the counter circuit 211, and the selection circuit 212.
The waveform shaping unit 210 shapes a potential change of the cathode of the APD 201 that has been obtained at the time of photon detection and outputs a pulse signal. An inverter circuit is used as the waveform shaping unit 210, for example.
The counter circuit 211 counts the number of pulse signals (the number of times) output from the waveform shaping unit 210, and stores a count value. When a control pulse pRES is supplied via a drive line 213, the number of pulse signals that is stored in the counter circuit 211 is reset.
A control pulse pSEL is supplied to the selection circuit 212 from the vertical scanning circuit unit 110 illustrated in
Electric connection may be switched by a switch, such as a transistor disposed between the quench element 202 and the APD 201, or between the photoelectric conversion unit 102 and the signal processing unit 103. Similarly, the supply of the voltage VH or the voltage VL to be supplied to the photoelectric conversion unit 102 may be electrically switched using a switch, such as a transistor.
In the present embodiment, the configuration that uses the counter circuit 211 has been described. Alternatively, the photoelectric conversion apparatus 100 may acquire a pulse detection timing by using a time to digital converter (hereinafter, TDC) and a memory in place of the counter circuit 211. In this case, the generation timing of a pulse signal output from the waveform shaping unit 210 is converted into a digital signal by the TDC. To measure the timing of a pulse signal, a control pulse pREF (reference signal) is supplied via a drive line to the TDC from the vertical scanning circuit unit 110 illustrated in
During a period from a time to t0 a time t1, a potential difference VH-VL is applied to the APD 201 in
The arrangement of the signal lines 113, and the arrangement of the readout circuit 112 and the output circuit 114 are not limited to those illustrated in
A photoelectric conversion apparatus according to a first embodiment will be described with reference to
For example, the voltage control unit 604 controls the voltage of the cathode to reduce a drop of the voltage of the cathode when the voltage of the cathode drops to a predetermined value. In
The quench element 202 includes a P-channel metal oxide semiconductor (PMOS) transistor, for example, and a clock signal PCLKB is input to the gate of the PMOS transistor. The clock signal PCLKB is input at a predetermined cycle, for example. In the present embodiment, the presence or absence of electric connection between the first power source 601 and the cathode of the APD 201 is switched by controlling on/off of the quench element 202 in accordance with the clock signal PCLKB input to the quench element 202.
One terminal of the voltage control unit 604 is connected to the cathode of the APD 201, and a different terminal is connected to the third power source 603. The voltage control unit 604 is connected to the cathode of the APD 201 and controls a cathode voltage VC of the APD 201. In response to the cathode voltage VC reaching a predetermined voltage, current flows to VC from the third power source 603. In
Then, when the clock signal PCLKB changes to a high level, the PMOS transistor of the quench element 202 is turned off, and a node to which a cathode terminal of the APD 201 is connected enters a floating state.
In response to a photon entering at the time t2, avalanche multiplication occurs in the APD 201, and the cathode voltage VC drops from the potential V2 to the potential V1. The potential V1 is a value smaller than the potential V2 by Vex, and at this time, the reverse bias voltage of the APD 201 drops to a voltage smaller than the breakdown voltage. The potential V2 is the voltage VH of the first power source 601, and the voltage VH is Vbd+Vex as described above. Thus, even when the cathode voltage VC drops to the potential V1 by an occurrence of avalanche multiplication, a voltage difference to be applied to the APD 201 can be maintained to a voltage difference equal to or larger than the breakdown voltage.
When the cathode voltage VC drops to a voltage smaller than the potential V1, a voltage difference to be applied to the APD 201 drops to a voltage difference smaller than the breakdown voltage.
Subsequently, in response to a photon entering at a time t2 or later, because the reverse bias voltage smaller than the breakdown voltage is applied to the APD 201, avalanche multiplication in Geiger mode does not occur. Meanwhile, the reverse bias voltage is applied to the APD 201 between the first power source 601 and the second power source 602, an electron-hole pair is generated by light emission, and reverse current is generated. Due to this reason, in a case without the voltage control unit 604, the cathode voltage VC continues to drop to a potential lower than the potential V1, as indicated by a broken line in
In view of the foregoing, in the present embodiment, as illustrated in
A first Example included in the above-described first embodiment will be described with reference to
A source of the PMOS transistor 905 is connected to the third power source 603, and a drain of the PMOS transistor 905 is connected to the cathode of the APD 201. The drain of the PMOS transistor 905 is connected to a gate of the PMOS transistor 905. Due to photocurrent generated after the avalanche multiplication, the cathode voltage VC drops, and when the cathode voltage VC drops to a threshold value at which the PMOS transistor 905 enters an on state, current from the third power source 603 flows to the cathode of the APD 201. Because the cathode voltage VC can be increased by this current, the cathode voltage VC is prevented from dropping to a value exceeding a predetermined value and is prevented from exceeding the withstand voltage of the MOS transistor included in the quench element 202. With this configuration, a photoelectric conversion apparatus with high stability can be provided. Since the voltage control unit 604 can be implemented by a single PMOS transistor, the area occupation can be reduced.
The PMOS transistor 905 has a higher withstand voltage than that of the MOS transistor included in the quench element 202. For example, a film thickness of a gate oxide film of the PMOS transistor 905 is thicker than that of a gate oxide film of the MOS transistor included in the quench element 202. With this configuration, a withstand voltage is made higher. From the aspect of downsizing, the withstand voltage of the MOS transistor included in the quench element 202 may be fixed at a constant value or lower. On the other hand, because the PMOS transistor 905 can be designed relatively freely, the withstand voltage of the PMOS transistor 905 can be made higher.
A second example included in the above-described first embodiment will be described with reference to
In this example, the voltage control unit 604 includes a diode 1006. An anode of the diode 1006 is connected to the third power source 603, and a cathode of the diode 1006 is connected to the cathode of the APD 201. Due to photocurrent generated after the avalanche multiplication, the cathode voltage VC drops. For example, in response to the cathode voltage VC dropping to a voltage equal to or smaller than the voltage of the third power source 603, a forward bias voltage is applied to a diode to which a reverse bias voltage has been applied, which causes a current to flow to the cathode of the APD 201 from the third power source 603 via the diode 1006. Because the cathode voltage VC is increased by this current, the cathode voltage VC is prevented from dropping to a value exceeding a predetermined value, which leads to prevention of an excess of the withstand voltage of the MOS transistor. With this configuration, a photoelectric conversion apparatus with high stability can be provided.
A third example included in the first embodiment will be described with reference to
In this example, the voltage control unit 604 includes a diode 1106 and a PMOS transistor 1105. An anode of the diode 1106 is connected to the third power source 603, and a cathode of the diode 1106 is connected to a source of the PMOS transistor 1105. A drain of the PMOS transistor 1105 is connected to the cathode of the APD 201. The drain of the PMOS transistor 1105 is connected to a gate of the PMOS transistor 1105. Due to photocurrent generated after the avalanche multiplication, the cathode voltage VC drops, and the PMOS transistor 1105 enters the on state. Because a forward bias voltage is applied to the diode 1106 by the voltage of the third power source 603 and the voltage of the cathode of the APD 201, current flows from the third power source 603 toward the cathode of the APD 201. By this current, the cathode voltage VC is increased, and the cathode voltage VC is prevented from dropping to a value exceeding a predetermined value, which leads to prevention of an excess of the withstand voltage of the MOS transistor included in the quench element 202. A photoelectric conversion apparatus with high stability can be provided.
Generally, the leak current of a MOS transistor is higher than the leak current of a diode. For this reason, as compared with a case where a single PMOS transistor is disposed, which corresponds to the first example, in a case where a MOS transistor and a diode are used in combination, leak current which is generated in a current flow from the third power source 603 to the cathode of the APD 201 is reduced. An issue that arises in a case where leak current is high will be described with reference to
The quench elements 202 of the four pixels are disposed near neighboring pixels. For example, a part of the quench elements 202 and the voltage control units 604 of the four pixels share a well region 1107. The well region 1107 is an N-type well region. In this example, the PMOS transistor of the quench element 202 and the PMOS transistor 1105 of the voltage control unit 604 are disposed in the N-type well region 1107. A PMOS transistor 2101 of the waveform shaping unit 210 is disposed in the well region 1107. As illustrated in
An NMOS transistor 2102 of the waveform shaping unit 210 is disposed in the well region 1108. The waveform shaping unit 210 includes the PMOS transistor 2101 and the NMOS transistor 2102. The well region 1108 is disposed between P-type well regions 1107 in a planar view.
The diode 1106 of the voltage control unit 604 is disposed in the P-type well region 1107. In this example, the diode 1106 includes an N-type active region 1109 and a P-type active region 1122. Here, in this example, a well contact region is disposed between the NMOS transistor 2102 and the diode 1106. Specifically, an N-type well contact region 1111 and a P-type well contact region 1119 are disposed around the diode 1106. This configuration prevents a parasitic bipolar from operating between the NMOS transistor 2102 and the diode 1106. This configuration can form a bipolar transistor in which the N-type well contact region 1111 serves as a collector, the P-type active region 1122 serves as a base, and the N-type active region 1109 serves as an emitter. Furthermore, with the N-type well contact region 1111, operations of nearby transistors are less susceptible.
As illustrated in
In the first wiring layer, a wiring pattern 1113, a wiring pattern 1114, a wiring pattern 1115, and a wiring pattern 1116 are disposed to correspond to the quench element 202, the voltage control unit 604, and the waveform shaping unit 210 in a planar view. The wiring pattern 1113 is a cathode wiring and is connected to the cathode of the APD 201. The wiring pattern 1114 also serves as a wiring that supplies power and supplies potential to the anode of the APD 201. The wiring pattern 1114 is connected to the MOS transistor of the quench element 202. The wiring pattern 1115 is a wiring that supplies a GND potential, and is connected to the anode of the diode 1106.
The wiring pattern 1116 is a signal wiring, and a signal output from the counter passes through the wiring pattern 1116.
The wiring pattern 1113 of the first wiring layer and the wiring pattern 1113 of the second wiring layer are connected. As illustrated in
This can reduce the coupling capacitance between the wiring pattern 1113 serving as a cathode wiring, and the wiring patterns 1114 and 1115 serving as power wirings. The amount of charges that is generated in recharging of the cathode voltage VC is determined by a cathode capacitance, including the capacitance of the cathode wiring, and an excess bias. The reduction in the amount of charges that is generated in recharging of the cathode potential leads to a reduction in power consumption.
The wiring pattern 1113 of the second wiring layer is connected to the wiring pattern 1113 of the third wiring layer illustrated in
A fourth example included in the above-described first embodiment will be described with reference to
In this example, the voltage control unit 604 includes a bipolar transistor 1120 and the PMOS transistor 1105. The voltage of the first power source 601 and the voltage of the third power source 603 are equal to each other.
A collector of the bipolar transistor 1120 is connected to the third power source 603. An emitter of the bipolar transistor 1120 is connected to the source of the PMOS transistor 1105. A GND voltage is supplied to a base of the bipolar transistor 1120. A voltage to be supplied to the base of the bipolar transistor 1120 is 1.1 V, for example.
A drain of the PMOS transistor 1105 is connected to the cathode of the APD 201. The drain of the PMOS transistor 1105 is connected to the gate of the PMOS transistor 1105. Due to photocurrent generated after the avalanche multiplication, the cathode voltage VC drops and the PMOS transistor 1105 enters the on state. Consequently, a forward bias voltage is applied to the diode 1106 by the voltage of the third power source 603 and the voltage of the cathode of the APD 201, current flows from the third power source 603 toward the cathode of the APD 201. By this current, the cathode voltage VC is increased, which leads to prevention of dropping of the cathode voltage VC to a value exceeding a predetermined value and prevention of an excess of the withstand voltage of the MOS transistor included in the quench element 202. With this configuration, a photoelectric conversion apparatus with high stability can be provided.
By amplifying current using the bipolar transistor 1120, the drop of the cathode voltage VC can be further suppressed. The bipolar transistor 1120 may be a parasitic bipolar.
A fifth example included in the above-described first embodiment will be described with reference to
In this example, the voltage control unit 604 includes a plurality of diodes. For example, the voltage control unit 604 can include three diodes. An amplitude conversion unit 610 is connected between the quench element 202 and the cathode of the APD 201. The amplitude conversion unit 610 can include a PMOS transistor, for example. The amplitude conversion unit 610 controls a voltage at a node NodeA in accordance with a gate voltage of the amplitude conversion unit 610. Because the amplitude of the cathode voltage VC (for example, 2.1 V) is applied between the source and the drain of the MOS transistor, the amplitude conversion unit 610 desirably uses a transistor with a high withstand voltage. For example, a transistor with a withstand voltage of 2.5 V is used. On the other hand, because withstand voltages of the quench element 202 and the waveform shaping unit 210 are not required to be so high, it is desirable to use a transistor with a low withstand voltage. For example, the quench element 202 and the waveform shaping unit 210 use transistors with a withstand voltage of 1.3 V.
The cathode of the APD 201 and the cathodes of the diodes are connected. Then, the three diodes are continuously connected. According to this example as well, dropping of the cathode voltage VC to a value exceeding a predetermined value is prevented, and an excess of the withstand voltage of the MOS transistor included in the quench element 202 is prevented. With this configuration, a photoelectric conversion apparatus with high stability can be provided. By three diodes being connected as in this example, as compared with the case of executing control by one diode, the control of the voltage of the cathode voltage VC is easier.
An operation in a case where the amplitude conversion unit 610 is disposed will be described with reference to
Among the three diodes 1106, the center diode 1106 is a diode connected to VC in
A sixth example included in the above-described first embodiment will be described with reference to
In this example, a part of the voltage control unit 604 is shared by a plurality of APDs 201. the layout area is reduced.
As illustrated in
While, in
A seventh example is a modified example of the first to sixth examples, and this example will be described with reference to
When an anode voltage VA is increased by photocurrent generated after the avalanche multiplication, and the anode voltage VA increases to a threshold value at which the NMOS transistor 1304 enters the on state, current flows from the anode of the APD 201 to the third power source 1303. By this current, the anode voltage is decreased, which leads to prevention of an increase in the anode voltage VA to a value exceeding a predetermined value, and prevention of an excess of the withstand voltage of the MOS transistor. Thus, with this configuration, a photoelectric conversion apparatus with high stability can be provided. Since the voltage control unit 604 can be implemented by disposing a single NMOS transistor, the area can be reduced.
In the first to sixth examples, a terminal of an anode and a terminal of a cathode may be swapped as in this example.
An eighth example is a modified example of the first to seventh examples. In each example described above, the presence or absence of electric connection between the cathode of the APD 201 and the first power source is switched in accordance with a clock signal by using a MOS transistor which serves as the charge unit. The configuration is not limited to this, and the charge unit may be a resistor. A MOS transistor to which a clock signal is not input may be used as the charge unit. Specifically, passive recharge may be performed.
For example, in a case where an APD current under high illumination is higher than recharge current generated by the charge unit, a cathode potential sometimes exceeds a withstand voltage of a MOS transistor. Even in such a case, under high illumination, the voltage control unit 604 is used, and thus the withstand voltage of the MOS transistor is ensured.
In the above-described embodiment, the photoelectric conversion apparatus including two stacked layers has been described with reference to
Specifically, the above-described embodiment is an example in which the photoelectric conversion unit 102 is disposed on the sensor substrate 11 serving as the first substrate, the signal processing unit 103 is disposed on the circuit substrate 21 serving as the second substrate, and the first substrate and the second substrate are stacked one on another. In a second embodiment, a photoelectric conversion apparatus in which a third substrate is also stacked in addition to the first substrate and the second substrate will be described with reference to
In
A first signal processing unit including the quench element 202, the voltage control unit 604, and the waveform shaping unit 210 are disposed on a first circuit substrate serving as the second substrate. Furthermore, a second signal processing unit including a counter circuit and a selection circuit are disposed on a second circuit substrate serving as the third substrate. Then, the first substrate, the second substrate, and the third substrate are stacked one on another.
The APD 201 has a large voltage change attributed to avalanche multiplication at the cathode or the anode. For this reason, as a MOS transistor included in the quench element 202 serving as the charge unit, an element (for example, MOS transistor) included in the voltage control unit 604, and an element (for example, MOS transistor) included in the waveform shaping unit 210, MOS transistors with a high withstand voltage are used. On the other hand, an output from the waveform shaping unit 210 is a digital signal with a pulse waveform, and a MOS transistor with a high withstand voltage may not be used. Meanwhile, in a signal processing circuit subsequent to the waveform shaping unit 210, lower voltage can be achieved by using a MOS transistor with a low withstand voltage, which leads to achievement of lower power consumption. Using a MOS transistor with a low withstand voltage leads to downsizing of the transistor, which also leads to achievement of space saving. For example, the thickness of a gate oxide film of a MOS transistor with a high withstand voltage is thicker than the thickness of a gate oxide film of a MOS transistor with a low withstand voltage. The channel length of a MOS transistor with a high withstand voltage is longer than the channel length of a MOS transistor with a low withstand voltage. Regarding the configurations of the first substrate and the second substrate, the configurations in each example described in the first embodiment can be employed.
With reference to
The photoelectric conversion apparatus described in each of the first and second embodiments is applicable to various photoelectric conversion systems. Examples of the various photoelectric conversion systems include a digital still camera, a digital camcorder, a monitoring camera, a copying machine, a fax, a mobile phone, an in-vehicle camera, and an observation satellite. The various photoelectric conversion systems also include a camera module including an optical system, such as a lens and an imaging apparatus.
The photoelectric conversion system illustrated in
The photoelectric conversion system further includes a signal processing unit 1007 serving as an image generation unit that processes an output signal output from the imaging apparatus 1004, to generate an image. The signal processing unit 1007 performs an operation of performing various types of correction and compression as necessary and outputting image data. The signal processing unit 1007 may be formed on a semiconductor substrate in which the imaging apparatus 1004 is disposed, or may be formed on a semiconductor substrate different from the imaging apparatus 1004.
The photoelectric conversion system further includes a memory unit 1010 for temporarily storing image data, and an external interface unit (external I/F unit) 1013 for communicating with an external computer. The photoelectric conversion system further includes a recording medium 1012, such as a semiconductor memory, for recording therein or reading therefrom captured data, and a recording medium control interface unit (recording medium control I/F unit) 1011 for recording or reading image data in or from the recording medium 1012. The recording medium 1012 may be built into the photoelectric conversion system or may be attachable to and detachable from the photoelectric conversion system.
Further, the photoelectric conversion system according to the present embodiment includes an overall control/calculation unit 1009 that performs various calculations and controls the entire operation of the digital still camera, and a signal generation unit 1008 that outputs various timing signals to the imaging apparatus 1004 and the signal processing unit 1007. The timing signals may be input from outside, and the photoelectric conversion system may be required to include at least the imaging apparatus 1004 and the signal processing unit 1007 that processes an output signal output from the imaging apparatus 1004.
The imaging apparatus 1004 outputs an imaging signal to the signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging apparatus 1004 and outputs image data. The signal processing unit 1007 generates an image using the imaging signal.
As described above, according to the present embodiment, it is possible to achieve a photoelectric conversion system to which the photoelectric conversion apparatus (the imaging apparatus) according to any of the above-described embodiments is applied.
With reference to
Alternatively, the distance information acquisition unit may be achieved by a field-programmable gate array (FPGA) or an application-specific integrated circuit (ASIC), or may be achieved by the combination of these.
The photoelectric conversion system 2300 is connected to a vehicle information acquisition apparatus 2320 and can acquire vehicle information, such as a vehicle speed, a yaw rate, and a steering angle. The photoelectric conversion system 2300 is also connected to a control electronic control unit (ECU) 2330 that is a control unit that produces a braking force in the vehicle based on a determination result of the collision determination unit 2318. The photoelectric conversion system 2300 is also connected to an alarm apparatus 2340 that gives an alarm to a driver based on a determination result of the collision determination unit 2318. For example, if there is a high possibility of a collision as the determination result of the collision determination unit 2318, the control ECU 2330 performs braking, releasing an accelerator, or suppressing engine output, to control the vehicle to avoid a collision and reduce damage. The alarm apparatus 2340 warns a user by setting off an alarm such as a sound, displaying alarm information on a screen of an automotive navigation system, or imparting a vibration to a seat belt or the steering.
In the present embodiment, the photoelectric conversion system 2300 captures the periphery, such as the front direction or the rear direction, of the vehicle.
In the above description, an example has been described where a vehicle is controlled to avoid colliding with another vehicle. Alternatively, the present embodiment is also applicable to control for autonomous driving to follow another vehicle or control for autonomous driving to avoid a deviation from a lane. Furthermore, the photoelectric conversion system can be applied not only to a vehicle such as an automobile but also to a movable body (a moving apparatus), such as a vessel, an aircraft, or an industrial robot. Moreover, in addition to a movable body, the photoelectric conversion system can be applied to a device extensively using object recognition, such as an intelligent transportation system (ITS).
With reference to
As illustrated in
The optical system 402 includes one or more lenses and forms an image on a light-receiving surface (a sensor unit) of the photoelectric conversion apparatus 403 by guiding image light (incident light) from the subject to the photoelectric conversion apparatus 403.
As the photoelectric conversion apparatus 403, the photoelectric conversion apparatus according to each of the above-described embodiments is applied, and a distance signal indicating the distance obtained from a received light signal output from the photoelectric conversion apparatus 403 is supplied to the image processing circuit 404.
The image processing circuit 404 performs image processing to construct a distance image based on the distance signal supplied from the photoelectric conversion apparatus 403. Then, the distance image (image data) obtained by the image processing is supplied to and displayed on the monitor 405 or is supplied to and stored (recorded) in the memory 406.
Application of the above-described photoelectric conversion apparatus to the distance image sensor 401 having the above-describe configuration leads to achievement of acquiring a more accurate distance image, for example, in accordance with the improved characteristics of pixels.
With reference to
The endoscope 1100 includes a lens barrel 1101 having a part to be inserted into a body cavity of a patient 1132 by a predetermined length from its front end, and a camera head 1102 connected to the base end of the lens barrel 1101. While, in the example illustrated in
An opening portion into which an objective lens is fitted is at the front end of the lens barrel 1101. A light source device 1203 is connected to the endoscope 1100. Light generated by the light source device 1203 is guided to the front end of the lens barrel 1101 by a light guide extended inside the lens barrel 1101, passes through the objective lens, and is emitted toward an observation target in the body cavity of the patient 1132. The endoscope 1100 may be a forward-viewing endoscope, or may be an oblique-viewing endoscope, or may be a side-viewing endoscope.
An optical system and a photoelectric conversion apparatus are disposed inside the camera head 1102, and reflected light (observation light) from the observation target is collected on the photoelectric conversion apparatus by the optical system. The observation light is photoelectrically converted by the photoelectric conversion apparatus, and an electric signal corresponding to the observation light, i.e., an image signal corresponding to an observation image, is generated. The photoelectric conversion apparatus according to each of the above-described embodiments can be used as the photoelectric conversion apparatus. The image signal is transmitted to a camera control unit (CCU) 1135 as RAW data.
The CCU 1135 includes a central processing unit (CPU) and a graphics processing unit (GPU), and comprehensively controls operations of the endoscope 1100 and a display device 1136. Further, the CCU 1135 receives an image signal from the camera head 1102 and performs various types of image processing for displaying an image based on the image signal, such as a development process (demosaic process), on the image signal.
Based on the control of the CCU 1135, the display device 1136 displays an image based on the image signal subjected to the image processing performed by the CCU 1135.
The light source device 1203 includes a light source, such as a light-emitting diode (LED), and supplies emission light for image capturing of an operation site to the endoscope 1100.
An input device 1137 is an input interface for an input to the endoscopic operation system 1700. A user can input various pieces of information and input an instruction to the endoscopic operation system 1700 via the input device 1137.
A treatment tool control device 1138 controls driving of energy treatment tools 1112 for cauterizing or incising tissue or sealing blood vessels.
The light source device 1203 that supplies emission light for capturing an operation site to the endoscope 1100 can include an LED, a laser light source, or a white light source configured by the combination of these, for example. In a case of a white light source including a combination of RGB laser light sources, the output intensity and an output timing of each color (each wavelength) can be controlled highly accuracy, and thus the white balance of a captured image can be adjusted in the light source device 1203. In this case, laser light is emitted from each of the RGB laser light sources onto the observation target in a time division manner, and the driving of an imaging element of the camera head 1102 is controlled in synchronization with the emission timing of the laser light, whereby an image corresponding to each of RGB can also be captured in a time division manner. According to this method, it is possible to obtain a color image without providing color filters in the imaging element.
The driving of the light source device 1203 may be controlled in such a manner that the intensity of light to be output from the light source device 1203 is changed every predetermined time. Images are acquired in a time division manner by controlling the driving of the image element of the camera head 1102 in synchronization with the change timing of the light intensity, and the images are combined, whereby a high dynamic range image without so-called blocked-up shadows and blown-out highlights is generated.
The light source device 1203 may also be configured to supply light in a predetermined wavelength band adapted to special light observation. In the special light observation, for example, the wavelength dependence of light absorption of body tissues is utilized. Specifically, light in a narrower band than emission light (i.e., white light) in normal observation is emitted to capture an image of a predetermined tissue, such as blood vessels in a superficial layer of a mucous membrane, with high contrast.
Alternatively, in the special light observation, fluorescence observation to obtain an image with fluorescent light generated by emitting excitation light may be performed. In the fluorescence observation, fluorescent light from the tissue of the body is observed by emitting excitation light onto the body tissue, or a fluorescent image is obtained by locally injecting reagent, such as indocyanine green (ICG), into a body tissue and emitting excitation light suitable for a fluorescence wavelength of the reagent onto the body tissue. The light source device 1203 can be configured to supply narrow-band light and/or excitation light adapted to such special light observation.
With reference to
The eyeglasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the photoelectric conversion apparatus 1602 and the above-described display device. The control device 1603 also controls operations of the photoelectric conversion apparatus 1602 and the display device. In the lens 1601, an optical system for condensing light to the photoelectric conversion apparatus 1602 is formed.
A captured image of an eyeball obtained by the image capturing using infrared light is used to detect a line of sight of the user with respect to a displayed image. Any known method can be applied to the line of sight detection using a captured image of an eyeball. As an example, a line of sight detection method based on a Purkinje image obtained by reflection of irradiating light on a cornea can be used.
More specifically, a line of sight detection process based on the pupil center corneal reflection method is performed. A line of sight vector representing the direction (rotational angle) of an eyeball is calculated using the pupil center corneal reflection method, based on an image of a pupil and a Purkinje image that are included in a captured image of the eyeball, whereby a line of sight of the user is detected.
The display device of the present embodiment may include the photoelectric conversion apparatus including a light receiving element, and a displayed image on the display device may be controlled based on line of sight information on the user from the photoelectric conversion apparatus.
Specifically, in the display device, a first field of view region viewed by the user, and a second field of view region other than the first field of view region are determined based on the line of sight information. The first field of view region and the second field of view region may be determined by a control device of the display device, or the display device may receive the first field of view region and the second field of view region determined by an external control apparatus. In a display region of the display device, a display resolution of the first field of view region may be controlled to be higher than a display resolution of the second field of view region. More specifically, a resolution of the second field of view region may be set lower than a resolution of the first field of view region.
In addition, the display region includes a first display region and a second display region different from the first display region. Based on the line of sight information, a region with high priority may be determined from the first display region and the second display region. The first display region and the second display region may be determined by the control device of the display device, or the display device may receive the first display region and the second display region determined by an external control apparatus. Control may be performed in such a manner that a resolution of a region with high priority is controlled to be higher than a resolution of a region other than the region with high priority. In other words, a resolution of a region with relatively-low priority may be set to a low resolution.
Artificial intelligence (AI) may be used for determination of the first field of view region and the region with high priority. The AI may be a model configured to estimate an angle of a line of sight and a distance to a target object existing at the end of the line of sight, from an image of an eyeball by using training data including an image of the eyeball and a direction in which the eyeball in the image actually gives a gaze. An AI program may be included in the display device, the photoelectric conversion apparatus, or an external apparatus. In a case where an external apparatus includes an AI program, the AI program is transmitted to the display device via communication.
In a case where display control is performed based on line of sight detection, the present invention can be suitably applied to smart glasses further including a photoelectric conversion apparatus that captures an image of the outside. The smart glasses can display external information obtained by image capturing, in real time.
The above-described photoelectric conversion apparatus and photoelectric conversion system may be applied to an electronic device, such as a so-called smartphone and a tablet, for example.
As illustrated in
As illustrated in
In the electronic device 1500 having such a configuration, by applying the above-described photoelectric conversion apparatus, for example, a higher quality image is able to be captured. Aside from these, the photoelectric conversion apparatus can be applied to an electronic device, such as an infrared sensor, a distance measurement sensor that uses an active infrared light source, a security camera, or a personal or biometric authentication camera. The application leads to an increase in the accuracy and performance of these electronic devices.
The X-ray generation unit 310 includes a vacuum tube that generates X-rays, for example. High voltage and filament current from the high voltage generation apparatus 350 are supplied to the vacuum tube of the X-ray generation unit 310. By thermal electrons being emitted from a negative pole (filament) toward a positive pole (target), X-rays are generated.
The wedge 311 is a filter that adjusts an amount of X-rays emitted from the X-ray generation unit 310. The wedge 311 attenuates an X-ray amount in such a manner that X-rays emitted from the X-ray generation unit 310 to a subject have a predetermined distribution. The collimator 312 includes a lead plate that narrows down an emission range of X-rays that have passed through the wedge 311. The X-rays generated by the X-ray generation unit 310 are formed into a cone-beam shape via the collimator 312 and emitted to a subject on the top board 330.
The X-ray detection unit 320 includes a semiconductor apparatus in the first and second embodiments. The X-ray detection unit 320 detects X-rays that have been generated by the X-ray generation unit 310 and passed through the subject, and outputs a signal corresponding to an X-ray amount, together with the DAS 351.
The rotation frame 340 has an annular shape and is configured to be rotatable. In the rotation frame 340, the X-ray generation unit 310 (wedge 311, collimator 312) and the X-ray detection unit 320 are disposed to face each other. The X-ray generation unit 310 and the X-ray detection unit 320 are rotatable together with the rotation frame 340.
The high voltage generation apparatus 350 includes a booster circuit, and outputs high voltage to the X-ray generation unit 310. The DAS 351 includes an amplification circuit and an analog-to-digital (A/D) conversion circuit, and outputs a signal from the X-ray detection unit 320 to the signal processing unit 352 as digital data.
The signal processing unit 352 includes a central processing unit (CPU), a read only memory (ROM), and a random access memory (RAM), and executes image processing on digital data. The display unit 353 includes a flat-panel display device, and displays an X-ray image. The control unit 354 includes a CPU, a ROM, and a RAM, and controls entire operations of the X-ray CT apparatus 30.
A tenth embodiment can be applied to both the first embodiment and the second embodiment.
As the semiconductor apparatus 930, the photoelectric conversion apparatus (imaging apparatus) according to each of the above-described embodiments can be used. The device 9191 including the semiconductor apparatus 930 will be described in detail. The semiconductor apparatus 930 includes a semiconductor device 910. In addition to the semiconductor device 910, the semiconductor apparatus 930 can includes a package 920 storing the semiconductor device 910. The package 920 includes a base member on which the semiconductor device 910 is fixed, and a lid member, such as glass facing the semiconductor device 910. The package 920 can further include a bonding member, such as a bonding wire or a bump that connects a terminal disposed in the base member and a terminal disposed in the semiconductor device 910.
The device 9191 includes at least any of an optical device 940, a control device 950, a processing device 960, a display device 970, a storage device 980, and a mechanical device 990. The optical device 940 supports for the semiconductor apparatus 930. The optical device 940 is a lens, a shutter, or a mirror, for example, and includes an optical system for guiding light to the semiconductor apparatus 930. The control device 950 controls the semiconductor apparatus 930. The control device 950 is a semiconductor apparatus, such as an ASIC, for example.
The processing device 960 processes a signal output from the semiconductor apparatus 930. The processing device 960 is a semiconductor apparatus, such as a CPU or an ASIC, for forming an analog front end (AFE) or a digital front end (DFE). The display device 970 is an electroluminescent (EL) display device or a liquid crystal display device that displays information (image) obtained in the semiconductor apparatus 930. The storage device 980 is a magnetic device or a semiconductor device that stores information (image) obtained in the semiconductor apparatus 930. The storage device 980 is a volatile memory, such as a static RAM (SRAM) or a dynamic RAM (DRAM), or a nonvolatile memory, such as a flash memory or a hard disk drive.
The mechanical device 990 includes a moving unit or a propulsion unit, such as a motor or an engine. In the device 9191, a signal output from the semiconductor apparatus 930 is displayed on the display device 970 and transmitted to the outside by a communication device (not illustrated) included in the device 9191. In this configuration, the device 9191 desirably further includes the storage device 980 and the processing device 960 aside from a storage circuit and a calculation circuit included in the semiconductor apparatus 930. The mechanical device 990 may be controlled based on a signal output from the semiconductor apparatus 930.
The device 9191 is suitable for an electronic device, such as an information terminal having an image capturing function (e.g., smartphone or wearable terminal) or a camera (e.g., interchangeable lens camera, compact camera, video camera, monitoring camera). The mechanical device 990 in a camera drives a component of the optical device 940 for zooming, focusing, or a shutter operation. Alternatively, the mechanical device 990 in a camera moves the semiconductor apparatus 930 for an image stabilization operation.
The device 9191 can be a transport device, such as a vehicle, a ship, or a flight vehicle (drone, airplane, etc.). The mechanical device 990 in a transport device can be used as a moving device. The device 9191 serving as a transport device is suitable for a device that transports the semiconductor apparatus 930, or a device that aids and/or automates driving (steering) using an image capturing function. The processing device 960 for aiding and/or automating driving (steering) performs processing to operate the mechanical device 990 serving as a moving device, based on information obtained in the semiconductor apparatus 930. Alternatively, the device 9191 may be a medical device, such as an endoscope, a measuring device, such as a distance measuring sensor, an analytical device, such as an electronic microscope, an office device, such as a copier, or an industrial device, such as a robot.
According to the above-described embodiment, desirable pixel characteristics are obtainable. This leads to enhancement of the value of the semiconductor apparatus. The enhancement of the value corresponds to at least any of the addition of a function, performance improvement, characteristic improvement, reliability improvement, manufacturing yield ratio improvement, environmental burden reduction, cost reduction, downsizing, and weight saving.
Consequently, using the semiconductor apparatus 930 according to the present embodiment in the device 9191 also leads to enhancement of the value of the device 9191. For example, a transport device on which the semiconductor apparatus 930 is mounted achieves superior performance in the image capturing the outside of the transport device or measuring an external environment. Thus, determining to mount the semiconductor apparatus according to the present embodiment on a transport device when manufacturing and selling the transport device is advantageous in improving the performance of the transport device itself. The semiconductor apparatus 930 is suitable especially for a transport device that performs drive assist and/or automatic operation of the transport device using information obtained in the semiconductor apparatus 930.
A photoelectric conversion system and a movable body according to the present embodiment will be described with reference to
A plurality of photoelectric conversion units approximately equivalent to a pupil of the optical system may be disposed in pixels included in photoelectric conversion apparatus 80. For example, the plurality of photoelectric conversion units approximately equivalent to the pupil are disposed in such a manner as to correspond to one microlens. By the plurality of photoelectric conversion units receiving light beams having passed through mutually-different position of the pupil of the optical system, the photoelectric conversion apparatus 80 outputs image data corresponding to the light beams having passed through the different position. Then, the parallax acquisition unit 802 may calculate a parallax using the output image data. The photoelectric conversion system 8 further includes a distance acquisition unit 803 that calculates a distance to a target object based on the calculated parallax, and a collision determination unit 804 that determines whether collision is likely to occur, based on the calculated distance. In the present embodiment, the parallax acquisition unit 802 and the distance acquisition unit 803 serve as an example of a distance information acquisition unit that acquires distance information regarding a distance to a target object. More specifically, the distance information is information regarding a parallax, a defocus amount, and a distance to a target object. The collision determination unit 804 may determine collision likelihood using any of these pieces of distance information. The distance information may be acquired using a Time-of-Flight (ToF) technique. The distance information acquisition unit may be implemented by dedicatedly-designed hardware, or may be implemented by a software module. The distance information acquisition unit may be implemented by a FPGA) or an ASIC, or may be implemented by the combination of these.
The photoelectric conversion system 8 is connected with a vehicle information acquisition apparatus 810, and can acquire vehicle information, such as vehicle speed, a yaw rate, or a rudder angle. An electronic control unit (ECU) 820 is connected to the photoelectric conversion system 8. The ECU 820 serves as a control apparatus that outputs a control signal to cause a vehicle to generate braking force, based on a determination result obtained by the collision determination unit 804. The photoelectric conversion system 8 is also connected with an alarm apparatus 830 that raises an alarm to a driver, based on a determination result obtained by the collision determination unit 804. For example, in a case where the determination result obtained by the collision determination unit 804 indicates high collision likelihood, the control ECU 820 performs vehicle control to avoid collision or reduce damages by braking, releasing an accelerator, or suppressing engine output. The alarm apparatus 830 issues an alarm to a user by sounding an alarm such as sound, displaying warning information on a screen of a car navigation system, or vibrating a seatbelt or a steering wheel.
In the present embodiment, the photoelectric conversion system 8 captures an image of the periphery of the vehicle, such as the forward image or the backward image, for example.
The above description has been given of an example in which control is performed to avoid a collision with another vehicle. The photoelectric conversion system is also applicable to control for autonomous driving to follow another vehicle, or control for autonomous driving to avoid a deviation from a lane. Furthermore, the photoelectric conversion system 8 is applicable not only to a vehicle, such as an automobile, but also to a movable body (moving apparatus) such as a vessel, an aircraft, or an industrial robot. This movable body includes either one or both of a drive force generation unit that generates drive force to be mainly used for the movement of the movable body, and a rotator to be mainly used for the movement of the movable body. The drive force generation unit can be an engine, a motor, or the like. The rotator can be a tire, a wheel, a screw of a ship, a propeller of a flight vehicle, or the like. Moreover, the photoelectric conversion system can be applied to a device extensively using object recognition, such as an intelligent transport system (ITS), in addition to a movable body.
The various devices have been described in the above-described examples, but a mechanical device may be further included. The mechanical device in a camera can drive the component of an optical device for zooming, focusing, or a shutter operation. Alternatively, the mechanical device in a camera can move a photoelectric conversion apparatus for an image stabilization operation.
The device can be a transport device, such as a vehicle, a ship, or a flight vehicle. The mechanical device in a transport device can be used as a moving device. The device serving as a transport device is suitable for a device that transports the photoelectric conversion apparatus, or a device that aids and/or automates driving (steering) using an image capturing function. A processing device for aiding and/or automating driving (steering) performs processing for operating the mechanical device serving as a moving device, based on information obtained in the photoelectric conversion apparatus.
The present invention is not limited solely to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. For example, an example in which a partial configuration of a certain embodiment is added to another embodiment, and an example in which a partial configuration of a certain embodiment is replaced with a partial configuration of another embodiment are also included in the embodiments of the present invention. The embodiments described above can be implemented solely or as a combination of a plurality of elements or features thereof where necessary or where the combination of the elements or features from individual embodiments in a single embodiment is beneficial.
In the above-described embodiment(s), an example in which a MOS transistor is applied as a transistor has been described, but a transistor other than the MOS transistor may be applied. For example, a bipolar transistor may be used in place of the MOS transistor.
The photoelectric conversion systems described in the above-described third embodiment and the fourth embodiment are examples of the photoelectric conversion systems to which the photoelectric conversion apparatus can be applied, and the photoelectric conversion system to which the photoelectric conversion apparatus of the present invention can be applied is not limited to the configurations illustrated in
The above embodiments are merely examples of embodiments for carrying out the present invention, and the technical scope of the present invention should not be construed as being limited by the embodiments. That is, the present invention can be implemented in various forms without departing from the technical idea or the main features thereof.
As used herein, the phrase “A or B” and the phrase “at least one of A and B” can include all possible combinations of the listed items, unless expressly defined otherwise. Also, expressions, such as “at least one of A or/and B” and “one or more of A or/and B”, can include all possible combinations of the listed items, unless expressly defined otherwise. That is, the above expression is understood to disclose all of the following cases: when at least one A is included, when at least one B is included, and when both at least one A and at least one B are included. This applies equally to combinations of three or more elements.
The disclosure includes the following configurations and methods.
A photoelectric conversion apparatus comprising:
The photoelectric conversion apparatus according to configuration 1, wherein a voltage of the third power source is a voltage between a voltage of the first power source and a voltage of the second power source.
The photoelectric conversion apparatus according to configuration 1, wherein a voltage of the third power source is equal to a voltage of the first power source.
The photoelectric conversion apparatus according to configuration 1,
The photoelectric conversion apparatus according to configuration 1 or 4, wherein a gate of the MOS transistor is connected to the first terminal.
The photoelectric conversion apparatus according to any one of configurations 1 to 5, wherein the MOS transistor is a P-type MOS transistor.
The photoelectric conversion apparatus according to any one of configurations 1 to 5, wherein the MOS transistor is an N-type MOS transistor.
The photoelectric conversion apparatus according to configuration 1,
The photoelectric conversion apparatus according to any one of configurations 1 to 8,
The photoelectric conversion apparatus according to any one of configurations 1 to 8,
The photoelectric conversion apparatus according to any one of configurations 1 to 10, wherein a gate of the MOS transistor is connected to the first terminal.
The photoelectric conversion apparatus according to any one of configurations 1 to 11, wherein the MOS transistor is a P-type MOS transistor.
The photoelectric conversion apparatus according to any one of configurations 1 to 11, wherein the MOS transistor is an N-type MOS transistor.
The photoelectric conversion apparatus according to configuration 1, wherein the first terminal is a cathode of the avalanche photodiode.
The photoelectric conversion apparatus according to configuration 1, wherein the first terminal is an anode of the avalanche photodiode.
The photoelectric conversion apparatus according to configuration 1, further comprising a waveform shaping unit connected with the first terminal, wherein the waveform shaping unit is connected to the voltage control unit.
The photoelectric conversion apparatus according to any one of configurations 1 to 16, further comprising:
The photoelectric conversion apparatus according to any one of configurations 1 to 17, wherein the second signal processing unit includes a counter configured to count a signal output from the waveform shaping unit.
The photoelectric conversion apparatus according to any one of configurations 1 to 18,
A photoelectric conversion system comprising:
A movable body including the photoelectric conversion apparatus according to any one of configurations 1 to 19, the movable body comprising:
According to the present invention, it is possible to provide a photoelectric conversion apparatus that addresses an issue that occurs in a standby state in which a charge unit and a power source are disconnected.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Applications No. 2023-138474, filed Aug. 28, 2023, and No. 2024-097731, filed Jun. 17, 2024, which are hereby incorporated by reference herein in their entirety.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2023-138474 | Aug 2023 | JP | national |
| 2024-097731 | Jun 2024 | JP | national |
