Patent Application
20180102222
The present invention relates to a photoelectric conversion element, and a solar cell using the same.
Photoelectric conversion elements are used in a variety of optical sensors, copiers, solar cells, and the like. It is expected that solar cells will be actively put into practical use as cells using non-exhaustible solar energy. Among these, research and development of dye sensitized solar cells, in which an organic dye, a Ru bipyridyl complex, or the like is used as a sensitizer, are actively in progress, and the photoelectric conversion efficiency thereof reaches approximately 11%.
Meanwhile, in recent years, there have been reported research results indicating that solar cells using a metal halide as a compound (perovskite compound) having a perovskite-type crystal structure are capable of achieving relatively high conversion efficiency, and the solar cells attract attention.
For example, Nature, 499, p. 316(2013) reports that a perovskite-type solar cell, which uses a perovskite-type light absorbing agent in a photosensitive layer and which is provided with a hole transport layer and uses 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)9,9′-spirobifluorene [2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene: also referred to as “spiro-OMeTAD”] in the hole transport layer as a hole transporting material, can achieve high conversion efficiency.
However, according to an examination performed by the present inventors, the photoelectric conversion elements and the solar cell which are described in Nature, 499, p. 316(2013) have a problem in that the highest occupied molecular orbital (HOMO) level of spiro-OMeTAD is shallow, and thus a voltage (VOC) is not sufficient, and moisture resistance is also low.
Accordingly, an object of the invention is to provide a photoelectric conversion element excellent in a high voltage (VOC) and moisture resistance, and a solar cell using the same.
The present inventors have made various examinations with respect to a photoelectric conversion element that includes a hole transport layer by using a perovskite-type light absorbing agent in a photosensitive layer, and found that a structure and properties of a hole transporting material that is used in the hole transport layer have an effect on a voltage and moisture resistance of the photoelectric conversion element. The present inventors have made further examinations, and as a result, they have found that it is possible to improve the voltage and the moisture resistance of the photoelectric conversion element in a case of using a hole transporting material having a specific structure. The invention has been accomplished on the basis of the finding.
That is, the above-described problem has been solved by the following means.
<1> According to an aspect of the invention, there is provided a photoelectric conversion element comprising: a first electrode that includes a photosensitive layer containing a light absorbing agent on a conductive support; and a second electrode that is opposite to the first electrode. The light absorbing agent includes a compound having a perovskite-type crystal structure that includes a cation of an element of Group 1 in the periodic table or a cationic organic group A, a cation of a metal atom M other than the element of Group 1 in the periodic table, and an anion of an anionic atom or atomic group X. A hole transport layer, which includes a hole transporting material, is provided between the first electrode and the second electrode. The hole transporting material includes a compound represented by any one of the following Formulae (1) to (4).
(In the formulae, Za to Zh each independently represent non-metallic atom groups which are capable of forming a five-membered or six-membered ring and are selected from a carbon atom, a nitrogen atom, an oxygen atom, a sulfur atom, a phosphorous atom, and a selenium atom, the five-membered or six-membered ring may include a substituent group. G1 to G26 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group, a heteroaryl group, an amino group, a cyano group, a halogenated alkyl group, or a nitro group. l1 represents an integer of 0 to 6. m1 and m2 represent an integer of 0 to 3. n1 represents an integer of 0 to 3.)
<2> In the photoelectric conversion element according to <1>, the hole transporting material may include a compound represented by any one of Formulae (1) to (3).
<3> In the photoelectric conversion element according to <1> or <2>, the hole transporting material may include a compound represented by any one of Formulae (1) to (3), and Za to Zf in Formulae (1) to (3) may be represented by any one of the following Formulae (Z1-1) to (Z1-5).
(R1 to R4 in Formula (Z1-1), R6 and R7 in Formula (Z1-2), R8 and R9 in Formula (Z1-3), R10 to R12 in Formula (Z1-4), and R13 and R14 in Formula (Z1-5) represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an aryl group, a heteroaryl group, a cyano group, a halogenated alkyl group, or a nitro group. R5 in Formula (Z1-2) represents a hydrogen atom, an alkyl group, or an aryl group. * represents a bonding position.)
<4> In the photoelectric conversion element according to any one of <1> to <3>, the hole transporting material may include a compound represented by any one of Formulae (1) to (3), and at least two of G1 to G4 in Formula (1), at least two of G5 to G12 in Formula (2), or at least two of G13 to G18 in Formula (3) may be substituent groups which are represented by any one of the following Formulae (G1-1) to (G1-3) or halogen atoms.
(In Formulae, R15 to R21 represent a hydrogen atom, a halogen atom, an alkyl group, an aryl group, a heteroaryl group, NRf2, or SiRf3. Rf represents an alkyl group or an aryl group. * represents a bonding position.)
<5> In the photoelectric conversion element according to any one of <1> to <4>, the hole transporting material may include a compound represented by any one of Formulae (1) to (3), Za in Formula (1), Zc in Formula (2), and Ze in Formula (3) may be represented by Formula (Z1-1), and at least one of R1 to R4 in Formula (Z1-1) may be represented by an alkyl group, an alkenyl group, an alkoxy group, a halogen atom, a cyano group, a halogenated alkyl group, or a nitro group.
<6> In the photoelectric conversion element according to any one of <1> to <5>, the hole transporting material may include a compound represented by any one of Formulae (1) to (3), Za to Zf in Formulae (1) to (3) may be represented by Formula (Z1-1), and at least one of R1 to R4 in Formula (Z1-1) may be represented by an alkyl group, an alkenyl group, an alkoxy group, a halogen atom, a cyano group, a halogenated alkyl group, or a nitro group.
<7> In the photoelectric conversion element according to any one of <1> to <6>, the hole transporting material may include a compound represented by any one of Formulae (1) to (3), Za to Zf in Formulae (1) to (3) may be represented by Formula (Z1-1), at least one of R1 to R4 in Formula (Z1-1) may be represented by an alkyl group, an alkenyl group, or an alkoxy group, and at least one of R1 to R4 in Formula (Z1-1) may be represented by a halogen atom, a cyano group, a halogenated alkyl group, or a nitro group.
<8> According to another aspect of the invention, there is provided a solar cell comprising the photoelectric conversion element according to any one of <1> to <7>.
According to the invention, since the hole transporting material having a specific structure is used, it is possible to provide a photoelectric conversion element excellent in a high voltage and moisture resistance, and a solar cell using the photoelectric conversion element.
The above-described and other characteristics and advantages of the invention will be further clarified from the following description with appropriate reference to the accompanying drawings.
Definition
In this specification, parts of respective formulae may be expressed as a rational formula for understanding of chemical structures of compounds. According to this, in the respective formulae, partial structures are called (substituent) groups, ions, atoms, and the like, but in this specification, the partial structures may represent element groups or elements which constitute (substituent) groups or ions represented by the formulae in addition to the (substituent) groups, the ions, the atoms, and the like.
In this specification, with regard to expression of compounds (including a complex and a dye), the expression is also used to indicate salts of the compounds and ions of the compounds in addition to the compounds. In addition, the compounds include compounds of which a partial structure is changed in a range exhibiting a target effect. In addition, with regard to compounds for which substitution or non-substitution is not specified, the compounds also include compounds which have an arbitrary substituent group in a range exhibiting a desired effect. This is also true of substituent groups, linking groups, and the like (hereinafter, referred to as “substituent groups and the like”).
In this specification, in a case where a plurality of substituent groups and the like expressed using specific symbols or a plurality of substituent groups and the like are simultaneously defined, the respective substituent groups and the like may be identical to or different from each other unless otherwise stated. This is also true of definition of the number of substituent groups and the like.
In addition, in a case of approaching each other (particularly, in a case of being close to each other), the plurality of substituent groups and the like may be bonded to each other to form a ring unless otherwise stated. In addition, rings, for example, alicycles, aromatic rings, and hetero rings may be additionally fused together to form a fused ring.
In this specification, numerical ranges represented by using “to” include ranges including numerical values before and after “to” as the lower limit and the upper limit.
Photoelectric Conversion Element
The photoelectric conversion element of the invention includes a first electrode that includes a conductive support and a photosensitive layer provided on the conductive support, a second electrode that is opposite to the first electrode, and a hole transport layer that is provided between the first electrode and the second electrode.
In the invention, the aspect in which the photosensitive layer is provided on the conductive support includes an aspect in which the photosensitive layer is provided (directly provided) to be in contact with a surface of the conductive support, and an aspect in which the photosensitive layer is provided on an upper side of the surface of the conductive support through another layer.
In the aspect in which the photosensitive layer is provided on the upper side of the surface of the conductive support through another layer, as the other layer that is provided between the conductive support and the photosensitive layer, there is no particular limitation as long as the other layer does not deteriorate a battery performance of a solar cell. Examples of the other layer include a porous layer, a blocking layer, an electron transport layer, a hole transport layer, and the like.
In the invention, examples of the aspect in which the photosensitive layer is provided on the upper side of the surface of the conductive support through another layer includes an aspect in which the photosensitive layer is provided on a surface of a porous layer in a thin film shape and the like (refer to
In the photoelectric conversion element and a solar cell of the invention, a configuration other than a configuration defined in the invention is not particularly limited, and it is possible to employ a configuration that is known with respect to the photoelectric conversion element and the solar cell. Respective layers, which constitute the photoelectric conversion element of the invention, can be designed in correspondence with the purposes thereof, and may be formed, for example, in a monolayer or multilayers. For example, the porous layer may be provided between the conductive support and the photosensitive layer (refer to
Hereinafter, description will be given of preferred aspects of the photoelectric conversion element of the invention.
In
Furthermore, in
In this specification, simple description of “photoelectric conversion element 10” represents photoelectric conversion elements 10A to 10D unless otherwise stated. This is also true of a system 100 and a first electrode 1. In addition, simple description of “photosensitive layer 13” represents photosensitive layers 13A to 13C unless otherwise stated. Similarly, description of “hole transport layer 3” represents hole transport layers 3A and 3B unless otherwise stated.
Examples of a preferred aspect of the photoelectric conversion element of the invention include the photoelectric conversion element 10A illustrated in
The photoelectric conversion element 10A includes a first electrode 1A, a second electrode 2, and a hole transport layer 3A.
The first electrode 1A includes a conductive support 11 including a support 11a and a transparent electrode 11b, a porous layer 12, and a photosensitive layer 13A including a perovskite-type light absorbing agent. As schematically illustrated in
The photoelectric conversion element 10B illustrated in
The photoelectric conversion element 10C illustrated in
The photoelectric conversion element 10D illustrated in
In the invention, a system 100 to which the photoelectric conversion element 10 is applied functions as a solar cell as follows.
Specifically, in the photoelectric conversion element 10, light that is transmitted through the conductive support 11 or the second electrode 2 and is incident to the photosensitive layer 13 excites a light absorbing agent. The excited light absorbing agent includes high-energy electrons and can emit the electrons. The light absorbing agent, which emits high-energy electrons, becomes an oxidized substance.
In the photoelectric conversion elements 10A to 10D, electrons emitted from the light absorbing agent migrate between a plurality of the light absorbing agents and reach the conductive support 11. The electrons which have reached the conductive support 11 work in the external circuit 6, and then return to the photosensitive layer 13 through the second electrode 2 and the hole transport layer 3. The light absorbing agent is reduced by the electrons which have returned to the photosensitive layer 13.
As described above, in the photoelectric conversion element 10, a cycle of excitation of the light absorbing agent and electron migration is repeated, and thus the system 100 functions as a solar cell.
In the photoelectric conversion elements 10A to 10D, a method of allowing an electron to flow from the photosensitive layer 13 to the conductive support 11 is different in correspondence with presence or absence of the porous layer 12, a kind thereof, and the like. In the photoelectric conversion element 10 of the invention, electron conduction, in which electrons migrate between the light absorbing agents, occurs. Accordingly, in a case where the porous layer 12 is provided, the porous layer 12 can be formed from an insulating substance other than semiconductors in the related art. In a case where the porous layer 12 is formed from a semiconductor, electron conduction, in which electrons migrate at the inside of semiconductor fine particles of the porous layer 12 or between the semiconductor fine particles, also occurs. On the other hand, in a case where the porous layer 12 is formed from an insulating substance, electron conduction in the porous layer 12 does not occur. In a case where the porous layer 12 is formed from the insulating substance, in a case of using fine particles of an aluminum oxide (Al2O3) as the fine particles of the insulating substance, a relatively high voltage (VOC) is obtained.
Even in a case where the blocking layer 14 as the other layer is formed from a conductor or a semiconductor, electron conduction in the blocking layer 14 occurs. In addition, even in the electron transport layer 15, electron conductor occurs.
The photoelectric conversion element and the solar cell of the invention are not limited to the preferred aspects, and configurations and the like of the respective aspects may be appropriately combined between the respective aspects in a range not departing from the gist of the invention.
In the invention, materials and respective members which are used in the photoelectric conversion element and the solar cell can be prepared by using a typical method except for materials and members which are defined in the invention. For example, with regard to a perovskite sensitized solar cell, for example, reference can be made to Nature, 499, p. 316(2013) and J. Am. Chem. Soc., 2009, 131(17), p. 6050 to 6051.
In addition, reference can be made to materials and respective members which are used in a dye sensitized solar cell. With regard to dye sensitized solar cells, for example, reference can be made to JP2001-291534A, U.S. Pat. No. 4,927,721A, U.S. Pat. No. 4,684,537A, U.S. Pat. No. 5,084,365A, U.S. Pat. No. 5,350,644A, U.S. Pat. No. 5,463,057A, U.S. Pat. No. 5,525,440A, JP1995-249790A (JP-H7-249790A), JP2004-220974A, and JP2008-135197A.
First Electrode
The first electrode 1 includes the conductive support 11 and the photosensitive layer 13, and functions as a working electrode in the photoelectric conversion element 10.
As illustrated in
It is preferable that the first electrode 1 includes at least the blocking layer 14 from the viewpoint of short-circuit prevention, and more preferably the porous layer 12 and the blocking layer 14 from the viewpoints of light absorption efficiency and short-circuit prevention.
In addition, it is preferable that the first electrode 1 includes the electron transport layer 15 formed from an organic material from the viewpoints of an improvement in productivity of the photoelectric conversion element, thickness reduction, and flexibilization.
Conductive Support
The conductive support 11 is not particularly limited as long as the conductive support 11 has conductivity and can support the photosensitive layer 13 and the like. It is preferable that the conductive support 11 has a configuration formed from a conductive material, for example, a metal, or a configuration including the support 11a formed from glass or plastic and the transparent electrode 11b formed on a surface of the support 11a as a conductive film.
Among these, as illustrated in
It is preferable that the conductive support 11 is substantially transparent. In the invention, “substantially transparent” represents that transmittance of light (having a wavelength of 300 to 1200 nm) is 10% or greater, preferably 50% or greater, and more preferably 80% or greater.
The thickness of the support 11a and the conductive support 11 is not particularly limited and is set to an appropriate thickness. For example, the thickness is preferably 0.01 μm to 10 mm, more preferably 0.1 μm to 5 mm, and still preferably 0.3 μm to 4 mm.
In a case of providing the transparent electrode 11b, the film thickness of the transparent electrode 11b is not particularly limited. For example, the film thickness is preferably 0.01 to 30 μm, more preferably 0.03 to 25 μm, and still more preferably 0.05 to 20 μm.
The conductive support 11 or the support 11a may have a light management function on the surface. For example, the conductive support 11 or the support 11a may include an antireflection film formed by alternately laminating a high-refractive-index film and a low-refractive-index oxide film on the surface of the conductive support 11 or the support 11a as described in JP2003-123859A or may have a light guide function as described in JP2002-260746A.
[Blocking Layer]
In the invention, as in the photoelectric conversion elements 10A to 10C, the blocking layer 14 is preferably provided on the surface of the transparent electrode 11b, that is, between the conductive support 11, and the porous layer 12, the photosensitive layer 13, the hole transport layer 3, or the like.
In the photoelectric conversion element and the solar cell, for example, in a case where the photosensitive layer 13 or the hole transport layer 3, and the transparent electrode 11b and the like are electrically connected to each other, a reverse current is generated. The blocking layer 14 plays a role of preventing the reverse current. The blocking layer 14 is also referred to as a “short-circuit prevention layer”.
The blocking layer 14 may be allowed to function as a stage that carries the light absorbing agent.
The blocking layer 14 may be provided even in a case where the photoelectric conversion element includes the electron transport layer. For example, in a case of the photoelectric conversion element 10D, the blocking layer 14 may be provided between the conductive support 11 and the electron transport layer 15.
The material that forms the blocking layer 14 is not particularly limited as long as the material can perform the above-described function, and it is preferable that the material is a material through which visible light is transmitted, and which has insulating properties with respect to the conductive support 11 (transparent electrode 11b) and the like. Specifically, “material having insulating properties with respect to the conductive support 11 (transparent electrode 11b)” represents a compound (n-type semiconductor compound) having a conduction band energy level that is equal to or higher than a conduction band energy level of a material that forms the conductive support 11 (a metal oxide that forms the transparent electrode 11b) and is lower than a conduction band energy level of a material that constitutes the porous layer 12 or a ground state energy level of the light absorbing agent.
Examples of a material that forms the blocking layer 14 include silicon oxide, magnesium oxide, aluminum oxide, calcium carbonate, cesium carbonate, polyvinyl alcohol, polyurethane, and the like. In addition, the material may be a material that is typically used as a photoelectric conversion material, and examples thereof include titanium oxide, tin oxide, zinc oxide, niobium oxide, tungsten oxide, and the like. Among these, titanium oxide, tin oxide, magnesium oxide, aluminum oxide, and the like are preferred.
It is preferable that the film thickness of the blocking layer 14 is 0.001 to 10 μm, more preferably 0.005 to 1 μm, and still more preferably 0.01 to 0.1 μm.
In the invention, the film thicknesses of the respective layers can be measured by observing a cross-section of the photoelectric conversion element 10 by using a scanning electron microscope (SEM) and the like.
[Porous Layer]
In the invention, as in the photoelectric conversion elements 10A and 10B, the porous layer 12 is preferably provided on the transparent electrode 11b. In a case where the blocking layer 14 is provided, the porous layer 12 is preferably formed on the blocking layer 14.
The porous layer 12 is a layer that functions as a stage that carries the photosensitive layer 13 on the surface. In a solar cell, so as to increase the light absorption efficiency, it is preferable to increase a surface area of at least a portion that receives light such as solar light, and it is more preferable to increase the surface area of the porous layer 12 as a whole.
It is preferable that the porous layer 12 is a fine particle layer that includes pores and is formed through vapor deposition or close contact of fine particles of a material that forms the porous layer 12. The porous layer 12 may be a fine particle layer that is formed through vapor deposition of two or more kinds of fine particles. In a case where the porous layer 12 is a fine particle layer that includes pores, it is possible to increase the amount (adsorption amount) of the carried light absorbing agent.
It is preferable to increase the surface area of individual fine particles which constitute the porous layer 12 so as to increase the surface area of the porous layer 12. In the invention, in a state in which the fine particles are applied to the conductive support 11 and the like, it is preferable that the surface area of the fine particles which form the porous layer 12 is 10 or more times a projected area, and more preferably 100 or more times the projected area. The upper limit thereof is not particularly limited. Typically, the upper limit is approximately 5000 times the projected area. With regard to a particle size of the fine particles which form the porous layer 12, an average particle size, which uses a diameter when converting the projected area into a circle, is preferably 0.001 to 1 μm as primary particles. In a case where the porous layer 12 is formed by using a dispersion of fine particles, the average particle size of the fine particles is preferably 0.01 to 100 μm in terms of an average particle size of the dispersion.
For the material that forms the porous layer 12, there is no particular limitation with respect to conductivity. The material may be an insulating substance (insulating material), a conductive material, or a semiconductor (semi-conductive material).
As the material that forms the porous layer 12, it is possible to use, for example, chalcogenides (for example, an oxide, a sulfide, a selenide, and the like) of metals, compounds having a perovskite-type crystal structure (excluding a perovskite compound that uses a light absorbing agent), oxides of silicon (for example, silicon dioxide, and zeolite), or carbon nanotubes (including carbon nanowires, carbon nanorods, and the like).
The chalcogenides of a metal are not particularly limited, and preferred examples thereof include respective oxides of titanium, tin, zinc, tungsten, zirconium, hafnium, strontium, indium, cerium, yttrium, lanthanum, vanadium, niobium, aluminum, and tantalum, cadmium sulfide, cadmium selenide, and the like. Examples of the crystal structure of the chalcogenides of metals include an anatase-type crystal structure, a brookite-type crystal structure, and a rutile-type crystal structure, and the anatase-type crystal structure and the brookite-type crystal structure are preferable.
The compound having a perovskite-type crystal structure is not particularly limited, and examples thereof include a transition metal oxide and the like. Examples of the transition metal oxide include strontium titanate, calcium titanate, barium titanate, lead titanate, barium zirconate, barium stannate, lead zirconate, strontium zirconate, strontium tantalate, potassium niobate, bismuth ferrate, barium strontium titanate, lanthanum barium titanate, calcium titanate, sodium titanate, and bismuth titanate. Among these, strontium titanate, calcium titanate, and the like are preferable.
The carbon nanotubes have a shape obtained by rounding off a carbon film (graphene sheet) into a tubular shape.
The carbon nanotubes are classified into a single-walled carbon nanotube (SWCNT) obtained by winding one graphene sheet in a cylindrical shape, a double-walled carbon nanotube (DWCNT) obtained by winding two graphene sheets in a concentric shape, and a multi-walled carbon nanotube (MWCNT) obtained by winding a plurality of graphene sheets in a concentric shape. As the porous layer 12, any carbon nanotubes can be used without any particular limitation.
Among these, as the material that forms the porous layer 12, an oxide of titanium, tin, zinc, zirconium, aluminum, or silicon, or a carbon nanotube is preferable, and titanium oxide or aluminum oxide is more preferable.
The porous layer 12 may be formed from at least one kind of the chalcogenides of metals, the compound having a perovskite-type crystal structure, the oxide of silicon, or the carbon nanotube, or may be formed from a plurality of kinds thereof.
The film thickness of the porous layer 12 is not particularly limited. The thickness is typically in a range of 0.05 to 100 μm, and preferably in a range of 0.1 to 100 μm. In a case of being used as a solar cell, the film thickness is preferably 0.1 to 50 μm, more preferably 0.2 to 30 μm, and still more preferably 0.3 to 30 μm.
The film thickness of the porous layer 12 can be measured by observing a cross-section of the photoelectric conversion element 10 with a scanning electron microscope (SEM).
Furthermore, the film thickness of other layers such as the blocking layer 14 can be measured in the same manner unless otherwise stated.
[Electron Transport Layer]
In the invention, as in the photoelectric conversion element 10D, the electron transport layer 15 may be provided on the surface of the transparent electrode 11b.
The electron transport layer 15 has a function of transporting electrons, which are generated in the photosensitive layer 13, to the conductive support 11. The electron transport layer 15 is formed from an electron transporting material capable of exhibiting the above-described function. The electron transporting material is not particularly limited, and an organic material (organic electron transporting material) is preferable. Examples of the organic electron transporting material include fullerene compounds such as [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM), perylene compounds such as perylene tetracarboxylic diimide (PTCDI), low-molecular-weight compounds such as tetracyanoquinodimethane (TCNQ), high-molecular-weight compounds, and the like.
Although not particularly limited, it is preferable that the film thickness of the electron transport layer 15 is 0.001 to 10 μm, and more preferably 0.01 to 1 μm.
[Photosensitive Layer (Light Absorbing Layer)]
The photosensitive layer 13 is preferably provided on the surface (including an inner surface of a concave portion in a case where a surface on which the photosensitive layer 13 is provided is uneven) of each of the porous layer 12 (in the photoelectric conversion elements 10A and 10B), the blocking layer 14 (in the photoelectric conversion element 10C), and the electron transport layer 15 (in the photoelectric conversion element 10D).
In the invention, the light absorbing agent may contain at least one kind of specific perovskite compound to be described later, or two or more kinds of perovskite compounds. In addition, the light absorbing agent may include a light absorbing agent other than the perovskite compound in combination with the perovskite compound. Examples of the light absorbing agent other than the perovskite compound include a metal complex dye, and an organic dye. At this time, a ratio between the perovskite compound and the light absorbing agent other than the perovskite compound is not particularly limited.
The photosensitive layer 13 may be a monolayer or a laminated layer of two or more layers. In a case where the photosensitive layer 13 has the laminated layer structure of two or more layers, the laminated layer structure may be a laminated layer structure obtained by laminating layers formed from light absorbing agents different from each other, or a laminated layer structure including an interlayer including a hole transporting material between a photosensitive layer and a photosensitive layer.
The aspect in which the photosensitive layer 13 is provided on the conductive support 11 is as described above. The photosensitive layer 13 is preferably provided on a surface of each of the layers in order for an excited electron to flow to the conductive support 11 or the second electrode 2. At this time, the photosensitive layer 13 may be provided on the entirety or a part of the surface of each of the layers.
The film thickness of the photosensitive layer 13 is appropriately set in correspondence with an aspect in which the photosensitive layer 13 is provided on the conductive support 11, and is not particularly limited. For example, the film thickness is preferably 0.001 to 100 μm, more preferably 0.01 to 10 μm, and still more preferably 0.01 to 5 μm.
In a case where the porous layer 12 is provided, a total film thickness including the film thickness of the porous layer 12 is preferably 0.01 μm or greater, more preferably 0.05 μm or greater, still more preferably 0.1 μm or greater, and still more preferably 0.3 μm or greater. In addition, the total film thickness is preferably 100 μm or less, more preferably 50 μm or less, and still more preferably 30 μm or less. The total film thickness may be set to a range in which the above-described values are appropriately combined. Here, as illustrated in
In the photoelectric conversion element 10, a total film thickness of the porous layer 12, the photosensitive layer 13, and the hole transport layer 3 is not particularly limited. For example, the total thickness is preferably 0.01 μm or greater, more preferably 0.05 μm or greater, still more preferably 0.1 μm or greater, and still more preferably 0.5 μm or greater. In addition, the total film thickness is preferably 200 μm or less, more preferably 50 μm or less, still more preferably 30 μm or less, and still more preferably 5 μm or less. The total film thickness can be set to a range in which the above-described values are appropriately combined.
In the invention, in a case where the photosensitive layer is provided in a thick film shape (in the photosensitive layer 13B and 13C), the light absorbing agent that is included in the photosensitive layer may function as a hole transporting material.
The amount of the perovskite compound used may be set to an amount capable of covering at least a part of a surface of the first electrode 1, and preferably an amount capable of covering the entirety of the surface.
[Light Absorbing Agent of Photosensitive Layer]
The photosensitive layer 13 contains at least one kind of perovskite compound (also referred to as “perovskite-type light absorbing agent”) that includes “an element of Group 1 in the periodic table or a cationic organic group A”, “a metal atom M other than the element of Group 1 in the periodic table”, and “an anionic atom or atomic group X” as the light absorbing agent.
In the perovskite compound, the element of Group 1 in the periodic table or the cationic organic group A, the metal atom M, and the anionic atom or atomic group X exists as individual constituent ions of a cation (for convenience, may be referred to as “cation A”), a metal cation (for convenience, may be referred to as “cation M”), and an anion (for convenience, may be referred to as “anion X”) in the perovskite-type crystal structure.
In the invention, the cationic organic group represents an organic group having a property of becoming a cation in the perovskite-type crystal structure, and the anionic atom or atomic group represents an atom or atomic group that has a property of becoming an anion in the perovskite-type crystal structure.
In the perovskite compound that is used in the invention, the cation A represents a cation of an element of Group 1 in the periodic table or an organic cation that is composed of a cationic organic group A. The cation A is preferably an organic cation.
The cation of an element of Group 1 in the periodic table is not particularly limited, and examples thereof include cations (Li+, Na+, K+, and Cs+) of individual elements of lithium (Li), sodium (Na), potassium (K), and cesium (Cs), and the cation (Cs+) of cesium is more preferable.
The organic cation is not particularly limited as long as the organic cation is a cation of an organic group having the above-described property, but an organic cation of a cationic organic group represented by the following Formula (A1) is more preferable.
R1a—NH3+ Formula (A1):
In Formula (A1), R1a represents a substituent group. R1a is not particularly limited as long as R1a is an organic group, but an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, or a group represented by the following Formula (A2) is preferable. Among these, the alkyl group and a group represented by the following Formula (A2) are more preferable.
In Formula (A2), Xa represents NR1c, an oxygen atom, or a sulfur atom. R1b and R1c each independently represent a hydrogen atom or a substituent group. *** represents bonding with a nitrogen atom in Formula (A1).
In the invention, as the organic cation of the cationic organic group A, an organic ammonium cation (R1a—NH3+) composed of an ammonium cationic organic group A obtained through bonding between R1a and NH3 in Formula (A1) is preferable. In a case where the organic ammonium cation can employ a resonance structure, the organic cation further includes a cation having the resonance structure in addition to the organic ammonium cation. For example, in a case where Xa is NH (R1c is a hydrogen atom) in a group represented by Formula (A2), the organic cation also includes an organic amidinium cation that is one of a resonance structure of the organic ammonium cation in addition to the organic ammonium cation of the ammonium cationic organic group obtained through bonding between the group represented by Formula (A2) and NH3.
Examples of the organic amidinium cation composed of the amidinium cationic organic group include a cation represented by the following Formula (Aam). In this specification, the cation represented by the following Formula (Aam) may be noted as “R1bC(═NH)—NH3” for convenience.
The alkyl group is preferably an alkyl group having 1 to 18 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and still more preferably an alkyl group having 1 to 3 carbon atoms. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, butyl, tert-butyl, pentyl, hexyl, decyl, and the like.
The cycloalkyl group is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include cyclopropyl, cyclopentyl, cyclohexyl, and the like.
The alkenyl group is preferably an alkenyl group having 2 to 18 carbon atoms, and more preferably an alkenyl group having 2 to 6 carbon atoms. Examples of the alkenyl group include vinyl, allyl, butenyl, hexenyl, and the like.
The alkynyl group is preferably an alkynyl group having 2 to 18 carbon atoms, and more preferably an alkynyl group having 2 to 4 carbon atoms. Examples of the alkynyl group include ethynyl, butynyl, hexynyl, and the like.
The aryl group is preferably an aryl group having 6 to 14 carbon atoms, and more preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include phenyl.
The heteroaryl group includes a group composed of an aromatic hetero ring alone, and a group composed of a condensed hetero ring obtained through condensing of another ring, for example, an aromatic ring, an aliphatic ring, or a hetero ring with the aromatic hetero ring.
As the ring-constituting hetero atom that constitutes the aromatic hetero ring, a nitrogen atom, an oxygen atom, or a sulfur atom is preferable. In addition, with regard to the number of ring members of the aromatic hetero ring, three-membered to eight-membered rings are preferable, and a five-membered ring or a six-membered ring is more preferable.
Examples of the five-membered aromatic hetero ring and the condensed hetero ring including the five-membered aromatic hetero ring include respective cyclic groups of a pyrrole ring, an imidazole ring, a pyrazole ring, an oxazole ring, a thiazole ring, a triazole ring, a furan ring, a thiophene ring, a benzimidazole ring, a benzoxazole ring, a benzothiazole ring, an indoline ring, and an indazole ring. In addition, examples of the six-membered aromatic hetero ring and the condensed hetero ring including the six-membered aromatic hetero ring include respective cyclic groups of a pyridine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, a quinoline ring, and a quinazoline ring.
In the group represented by Formula (A2), Xa represents NR1c, an oxygen atom, or a sulfur atom, and NR1c is preferable as Xa. Here, R1c represents a hydrogen atom or a substituent group. R1c is preferably a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group, and more preferably a hydrogen atom.
R1b represents a hydrogen atom or a substituent group, and is preferably a hydrogen atom. Examples of the substituent group that can be employed as R1b include an amino group, an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, and a heteroaryl group.
An alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, and a heteroaryl group that can be respectively employed by R1b and R1c are the same as the respective groups of R1a, and preferred examples thereof are the same as described above.
Examples of the group represented by Formula (A2) include a (thio)acyl group, a (thio)carbamoyl group, an imidoyl group, and an amidino group.
Examples of the (thio)acyl group include an acyl group and a thioacyl group. The acyl group is preferably an acyl group having a total of 1 to 7 carbon atoms, and examples thereof include formyl, acetyl, propionyl, hexanoyl, and the like. The thioacyl group is preferably a thioacyl group having a total of 1 to 7 carbon atoms, and examples thereof include thioformyl, thioacetyl, thiopropionyl, and the like.
Examples of the (thio)carbamoyl group include a carbamoyl group and a thiocarbamoyl group (H2NC(═S)—).
The imidoyl group is a group represented by R1b—C(═NR1c)—, and it is preferable that R1b and R1c are respectively a hydrogen atom and an alkyl group. More preferably, the alkyl group is the same as the alkyl group as R1a. Examples thereof include formimidoyl, acetoimidoyl, propionimidoyl (CH3CH2C(═NH)—), and the like. Among these, formimidoyl is preferable.
The amidino group as the group represented by Formula (2) has a structure in which R1b of the imidoyl group is an amino group and R1c is a hydrogen atom.
The entirety of the alkyl group, the cycloalkyl group, the alkenyl group, the alkynyl group, the aryl group, the heteroaryl group, and the group represented by Formula (A2), which can be employed as R1a, may have a substituent group. The substituent group WP, which R1a may have, is not particularly limited, and examples thereof include an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, an alkoxy group, an alkylthio group, an amino group, an alkylamino group, an arylamino group, an acyl group, an alkylcarbonyloxy group, an aryloxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, an acylamino group, a sulfonamido group, a carbamoyl group, a sulfamoyl group, a halogen atom, a cyano group, a hydroxy group, a mercapto group, and a carboxy group. The substituent group, which R1a may have, may be additionally substituted with a substituent group.
In the perovskite compound that is used in the invention, the metal cation M is not particularly limited as long as the metal cation M is a cation of a metal atom other than the element of Group 1 in the periodic table and is a cation of a metal atom that can employ the perovskite-type crystal structure. Examples of the metal atom include metal atoms such as calcium (Ca), strontium (Sr), cadmium (Cd), copper (Cu), nickel (Ni), manganese (Mn), iron (Fe), cobalt (Co), palladium (Pd), germanium (Ge), tin (Sn), lead (Pb), ytterbium (Yb), europium (Eu), indium (In), titanium (Ti), bismuth (Bi), and thallium (Tl). Among these, as the metal atom M, a Pb atom or a Sn atom is more preferable. M may be one kind of metal atom, or two or more kinds of metal atoms. In a case where M includes two or more kinds of metal atoms, two kinds including the Pb atom and the Sn atom are preferable. A ratio of the metal atoms at this time is not particularly limited.
In the perovskite compound that is used in the invention, the anion X represents an anion of an anionic atom or atomic group X. Preferred examples of the anion include anions of halogen atoms, and anions of individual atomic groups of NCS−, NCO−, CH3COO−, and HCOO−. Among these, the anions of halogen atoms are more preferable. Examples of the halogen atoms include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, and the like.
The anion X may be an anion of one kind of anionic atom or atomic group, or anions of two or more kinds of anionic atoms or atomic groups. In a case where the anion X is an anion of one kind of anionic atom or atomic group, an anion of an iodine atom is preferable. On the other hand, in a case where the anion X includes anions of two or more kinds of anionic atoms or atomic groups, anions of two kinds of halogen atoms, particularly, an anion of a chlorine atom and an anion of an iodine atom are preferable. A ratio between two or more kinds of anions is not particularly limited.
As the perovskite compound that is used in the invention, a perovskite compound, which has a perovskite-type crystal structure including the above-described constituent ions and is represented by the following Formula (I), is preferable.
AaMmXx Formula (I):
In Formula (I), A represents an element of Group 1 in the periodic table or a cationic organic group. M represents a metal atom other than the element of Group 1 in the periodic table. X represents an anionic atom or atomic group.
a represents 1 or 2, m represents 1, and a, m, and x satisfy a relationship of a+2m=x.
In Formula (I), the element of Group 1 in the periodic table or the cationic organic group A forms a cation A of the perovskite-type crystal structure. Accordingly, there is no particular limitation as long as the element of Group 1 in the periodic table and the cationic organic group A are elements or groups which become the cation A and can constitute the perovskite-type crystal structure. The element of Group 1 in the periodic table or the cationic organic group A is the same as the element of Group 1 in the periodic table or the cationic organic group which is described in the above-described cation A, and preferred examples thereof are the same as described above.
The metal atom M is a metal atom that forms the metal cation M of the perovskite-type crystal structure. Accordingly, the metal atom M is not particularly limited as long as the metal atom M is an atom other than the element of Group 1 in the periodic table, becomes the metal cation M, and constitutes the perovskite-type crystal structure. The metal atom M is the same as the metal atom that is described in the above-described metal cation M, and preferred examples thereof are the same as described above.
The anionic atom or atomic group X forms the anion X of the perovskite-type crystal structure. Accordingly, the anionic atom or atomic group X is not particularly limited as long as the anionic atom or atomic group X is an atom or atomic group that becomes the anion X and can constitute the perovskite-type crystal structure. The anionic atom or atomic group X is the same as the anionic atom or atomic group which is described in the anion X, and preferred examples thereof are the same as described above.
The perovskite compound represented by Formula (I) is a perovskite compound represented by the following Formula (I-1) in a case where a is 1, or a perovskite compound represented by the following Formula (I-2) in a case where a is 2.
AMX3 Formula (I-1):
A2MX4 Formula (I-2):
In Formula (I-1) and Formula (I-2), A represents an element of Group 1 in the periodic table or a cationic organic group. A is the same as A in Formula (I), and preferred examples thereof are the same as described above.
M represents a metal atom other than the element of Group 1 in the periodic table. M is the same as M in Formula (I), and preferred examples thereof are the same as described above.
X represents an anionic atom or atomic group. X is the same as X in Formula (I), and preferred examples thereof are the same as described above.
The perovskite compound that is used in the invention may be any one of the compound represented by Formula (I-1) and the compound represented by Formula (I-2), or a mixture thereof. Accordingly, in the invention, at least one kind of the perovskite compound may exist as the light absorbing agent, and there is no need for clear and strict distinction on which compound the perovskite compound is by using a composition formula, a molecular formula, a crystal structure, and the like.
Hereinafter, specific examples of the perovskite compound that can be used in the invention will be exemplified, but the invention is not limited to the specific examples. In the following description, the perovskite compound is classified into the compound represented by Formula (I-1) and the compound represented by Formula (I-2). However, even the compound exemplified as the compound represented by Formula (I-1) may be the compound represented by Formula (I-2) in accordance with synthesis conditions, or may be a mixture of the compound represented by Formula (I-1) and the compound represented by Formula (I-2). Similarly, even the compound exemplified as the compound represented by Formula (I-2) may be the compound represented by Formula (I-1), or may be a mixture of the compound represented by Formula (I-1) and the compound represented by Formula (I-2).
Specific examples of the compound represented by Formula (I-1) include CH3NH3PbCl3, CH3NH3PbBr3, CH3NH3PbI3, CH3NH3PbBrI2, CH3NH3PbBr2I, CH3NH3SnBr3, CH3NH3SnI3, and CH(═NH)NH3PbI3.
Specific examples of the compound represented by Formula (I-2) include (C2H5NH3)2PbI4, (CH2═CHNH3)2PbI4, (CH≡CNH3)2PbI4, (n-C3H7NH3)2PbI4, (n-C4H9NH3)2PbI4, (C10H2NH3)2PbI4, (C6H5NH3)2PbI4, (C6H5CH2CH2NH3)2PbI4, (C6H3F2NH3)2PbI4, (C6F5NH3)2PbI4, and (C4H3SNH3)2PbI4. Here, C4H3SNH3 in (C4H3SNH3)2PbI4 represents aminothiophene.
The perovskite compound can be synthesized from a compound represented by Formula (II) and a compound represented by Formula (III).
AX Formula (II):
MX2 Formula (III):
In Formula (II), A represents an element of Group 1 in the periodic table, or a cationic organic group. A is the same as A in Formula (I), and preferred examples thereof are the same as described above. In Formula (II), X represents an anionic atom or atomic group. X is the same as X in Formula (I), and preferred examples thereof are the same as described above.
In Formula (III), M represents a metal atom other than the element of Group 1 in the periodic table. M is the same as M in Formula (I), and preferred examples thereof are the same as described above. In Formula (III), X represents an anionic atom or atomic group. X is the same as X in Formula (I), and preferred examples thereof are the same as described above.
With regard to a method of synthesizing the perovskite compound, for example, Nature, 499, p. 316(2013) can be exemplified. In addition, Akihiro Kojima, Kenjiro Teshima, Yasuo Shirai, and Tsutomu Miyasaka, “Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells”, J. Am. Chem. Soc., 2009, 131(17), p. 6050-6051 can be exemplified.
The amount of the light absorbing agent used is preferably set to an amount capable of covering at least a part of the surface of the first electrode 1, and more preferably an amount capable of covering the entirety of the surface.
The amount of the perovskite compound contained in the photosensitive layer 13 is typically 1% to 100% by mass.
[Hole Transport Layer]
As in the photoelectric conversion elements 10A to 10D, the photoelectric conversion element of the invention includes the hole transport layer 3 between the first electrode 1 and the second electrode 2. The hole transport layer 3 is preferably provided between the photosensitive layer 13 of the first electrode 1 and the second electrode 2.
The hole transport layer 3 includes a function of supplementing electrons to an oxidized substance of the light absorbing agent, and is preferably a solid-shaped layer (solid hole transport layer).
A hole transporting material, which is used in the hole transport layer of the invention, includes a compound having an acene-based, phenacene-based, or perylene-based condensed polycyclic skeleton which is represented by any one of Formulae (1) to (4) as described above.
In the hole transporting material having a specific structure such as the acene-based, phenacene-based, or perylene-based condensed polycyclic skeleton, the highest occupied molecular orbital (HOMO) level is deep, and thus the hole transporting material contributes to an improvement of a voltage (VOC). In addition, the hole transporting material has high hydrophobicity, and thus contributes to an improvement of moisture resistance.
In a compound that is represented by any one of Formulae (1) to (4), Za to Zh each independently represent non-metallic atom groups which are capable of forming a five-membered or six-membered ring and are selected from a carbon atom, a nitrogen atom, an oxygen atom, a sulfur atom, a phosphorous atom, and a selenium atom. Among these, the carbon atom, the nitrogen atom, the oxygen atom, and the sulfur atom are preferable, and the carbon atom is more preferable. Examples of a ring that is formed include a benzene ring, a thiophene ring, a pyrrole ring, a pyridine ring, a furan ring, a cyclohexane ring, a selenophene ring, a phosphole ring, and the like.
Za to Zh may include a substituent group, and the substituent group that can be employed is not particularly limited as long as the substituent group is an organic group, and preferred examples thereof include an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, a halogen atom, an alkoxy group, a cyano group, a halogenated alkyl group, and a nitro group. Among these, the halogen atom, the alkyl group, the alkenyl group, the alkoxy group, the cyano group, the halogenated alkyl group, or the nitro group is more preferable.
The alkyl group is preferably an alkyl group having 1 to 18 carbon atoms, more preferably an alkyl group having 1 to 12 carbon atoms, and still more preferably an alkyl group having 1 to 6 carbon atoms. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, butyl, tert-butyl, pentyl, hexyl, decyl, and the like.
The cycloalkyl group is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include cyclopropyl, cyclopentyl, cyclohexyl, and the like.
The alkenyl group is preferably an alkenyl group having 2 to 18 carbon atoms, and more preferably an alkenyl group having 2 to 6 carbon atoms. Examples of the alkenyl group include vinyl, allyl, butenyl, pentenyl, hexenyl, and the like.
The alkynyl group is preferably an alkynyl group having 2 to 18 carbon atoms, and more preferably an alkynyl group having 2 to 6 carbon atoms. Examples of the alkynyl group include ethynyl, butynyl, pentynyl, hexynyl, and the like.
The aryl group is preferably an aryl group having 6 to 14 carbon atoms, and more preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include phenyl.
The heteroaryl group includes a group composed of an aromatic hetero ring alone, and a group composed of a condensed hetero ring obtained through condensing of another ring, for example, an aromatic ring, an aliphatic ring, or a hetero ring with the aromatic hetero ring.
As the ring-constituting hetero atom that constitutes the aromatic hetero ring, a nitrogen atom, an oxygen atom, or a sulfur atom is preferable. In addition, with regard to the number of ring members of the aromatic hetero ring, three-membered to eight-membered rings are preferable, and a five-membered ring or a six-membered ring is more preferable.
Examples of the five-membered aromatic hetero ring and the condensed hetero ring including the five-membered aromatic hetero ring include respective cyclic groups of a pyrrole ring, an imidazole ring, a pyrazole ring, an oxazole ring, a thiazole ring, a triazole ring, a furan ring, a thiophene ring, a benzimidazole ring, a benzoxazole ring, a benzothiazole ring, an indoline ring, and an indazole ring. In addition, examples of the six-membered aromatic hetero ring and the condensed hetero ring including the six-membered aromatic hetero ring include respective cyclic groups of a pyridine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, a quinoline ring, and a quinazoline ring.
Examples of the halogen atoms include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Among these, the fluorine atom, the chlorine atom, and the iodine atom are preferable, and the fluorine atom is more preferable.
The alkoxy group is preferably an alkoxy group having 1 to 18 carbon atoms, and more preferably an alkoxy group having 1 to 6 carbon atoms. Examples of the alkoxy group include methoxy, ethoxy, propoxy, isopropoxy, butoxy, tert-butoxy, pentyloxy, hexyloxy, and heptyloxy.
The halogenated alkyl group is preferably a halogenated alkyl group having 1 to 30 carbon atoms, more preferably a halogenated alkyl group having 1 to 10 carbon atoms, and still more preferably a halogenated alkyl group having 1 to 6 carbon atoms. Examples of a halogen atom in the halogenated alkyl include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Among these, the fluorine atom is preferable. The number of halogen atoms in one halogenated alkyl group is preferably 1 to 30, and more preferably 1 to 3. Examples of the halogenated alkyl group include a perfluoromethyl group, for example, trifluoromethyl.
In the compound represented by any one of Formulae (1) to (4), G1 to G26 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group, a heteroaryl group, an amino group, a cyano group, a halogenated alkyl group, or a nitro group.
Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and iodine atom. Among these, the fluorine atom, the chlorine atom, and the bromine atom are preferable, and the fluorine atom is more preferable.
Specific examples and a preferred range of the alkyl group, the alkenyl group, an alkynyl group, and the alkoxy group are the same as in respective groups of Za to Zh as a substituent group. Respective groups may include a substituent group. Examples of the alkenyl group including a substituent group include a styryl group, and a triphenylaminoethenyl group. In addition, examples of the alkynyl group including a substituent group include a methylethynyl group, a phenylethynyl group, a methylthiophenylethynyl group, and a trimethylsilylethynyl group.
As the aryl group, an aromatic ring having 6 to 18 carbon atoms is preferable. As the aryl group, phenyl and naphthyl are preferable, and phenyl is more preferable. The aryl group may include a substituent group, and examples of the aryl group including a substituent group include a methylphenyl group, and a fluorophenyl group.
The heteroaryl group includes a group composed of an aromatic hetero ring alone, and a group composed of a condensed hetero ring obtained through condensing of another ring, for example, an aromatic ring, an aliphatic ring, or a hetero ring with the aromatic hetero ring. As the hetero atom that constitutes the heteroaryl group, a nitrogen atom, an oxygen atom, and a sulfur atom are preferable. In addition, with regard to the number of ring members of the heteroaryl group, three-membered to eight-membered rings are preferable, and a five-membered ring or a six-membered ring is more preferable. Preferred examples of a five-membered ring heteroaryl group and a condensed heteroaryl group including a five-membered aromatic hetero ring include a pyrrole ring, an imidazole ring, a pyrazole ring, an oxazole ring, a thiazole ring, a triazole ring, a furan ring, a thiophene ring, a benzimidazole ring, a benzoxazole ring, a benzothiazole ring, an indoline ring, and an indazole ring. Preferred examples of a six-membered ring heteroaryl group and a condensed heteroaryl group including a six-membered aromatic hetero ring include a pyridine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, a quinoline ring, and a quinazoline ring. The heteroaryl group may include a substituent group.
The halogenated alkyl group is preferably a halogenated alkyl group having 1 to 30 carbon atoms and more preferably a halogenated alkyl group having 1 to 10 carbon atoms. Examples of a halogen atom in the halogenated alkyl include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Among these, the fluorine atom is preferable. The number of halogen atoms in one halogenated alkyl group is preferably 1 to 30, and more preferably 1 to 3. Examples of the halogenated alkyl group include a perfluoromethyl group, for example, trifluoromethyl.
In the compound represented by Formula (1), l1 represents integers of 0 to 6, but 0 to 4 are preferable.
In the compound represented by Formula (2) or (3), m1 and m2 represent integers of 0 to 3, but 0 to 2 are preferable and 1 is more preferable.
In the compound represented by Formula (4), n1 represents integers of 0 to 3, but 0 to 2 are preferable and 1 is more preferable.
In the compounds represented by Formula (1) to (4), it is preferable that the compounds represented by Formulae (1) to (3) are more preferable when considering that a higher voltage (VOC) is obtained in comparison to the compound represented by Formula (4).
In the compounds represented by Formulae (1) to (3), it is preferable that Za to Zf are represented by any one of Formulae (Z1-1) to (Z1-5) as described above. R1 to R4 in Formula (Z1-1), R6 and R7 in Formula (Z1-2), R8 and R9 in Formula (Z1-3), R10 to R12 in Formula (Z1-4), and R13 and R14 in Formula (Z1-5) represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an aryl group, a heteroaryl group, a cyano group, a halogenated alkyl group, or a nitro group. R5 in Formula (Z1-2) represents a hydrogen atom, an alkyl group, or an aryl group. * represents a bonding position.
Among the compounds represented by Formulae (1) to (3), a compound in which both terminals of the condensed polycyclic skeleton are composed of an aromatic ring is preferable when considering that a higher voltage (VOC) is obtained in comparison to a compound in which both terminals are not composed of the aromatic ring.
In the compound in Formulae (1) to (3), specific examples and preferred ranges of the halogen atom, the alkyl group, the alkenyl group, the alkoxy group, the cyano group, the halogenated alkyl group, and the nitro group which are substituent groups, which can be employed as R1 to R4, and R6 to R14 in Formulae (Z1-1) to (Z1-5), other than a hydrogen atom are the same as the specific examples and the preferred ranges of the corresponding groups which can be employed in Za to Zh. In the compounds represented by Formulae (1) to (3), as a substituent group, which can be employed as R5 in Formula (Z1-2), other than a hydrogen atom, an alkyl group is preferable. Specific examples and preferred ranges of the alkyl group as the substituent group R5 are the same as the specific examples and the preferred ranges of the alkyl group that can be employed in Za to Zh.
In the compounds represented by Formulae (1) to (3), it is preferable that at least two of G1 to G4 in Formula (1), at least two of G5 to G12 in Formula (2), or at least two of G13 to G18 in Formula (3) are substituent groups which are represented by any one of Formulae (G1-1) to (G1-3), or halogen atoms.
As the substituent groups R15 and R16, in Formulae (G1-1) and (G1-2), an alkyl group, an aryl group, a heteroaryl group, NRf2, and SiRf3 are preferable, and NRf2 and SiRf3 are more preferable. Rf represents an alkyl group or an aryl group. Specific examples and preferred ranges of the alkyl group, the aryl group, and the heteroaryl group as the substituent group R15 and R16 are the same as the specific examples and the preferred ranges of corresponding groups which can be employed in Za to Zh. Specific examples and preferred ranges of the alkyl group or the aryl group as Rf are the same as the specific examples and the preferred ranges of corresponding groups which can be employed in Za to Zh. Examples of the substituent group of Formula (G1-1), which includes SiRf3, include a trimethylsilylethynyl group. Examples of the substituent group of Formula (G1-2), which includes NRf2, include a triphenylaminoethenyl group.
As the substituent groups R17 to R21 in Formula (G1-3), an alkyl group and a halogen atom are preferable. Specific examples and preferred ranges of the alkyl group and the halogen atom as the substituent group R17 to R21 are the same as the specific examples and the preferred ranges of the substituent groups which can be employed in Za to Zh.
The reason for the preference is as follows. Among the compounds represented by Formulae (1) to (3), in a compound including a substituent group represented by any one of Formulae (G1-1) to (G1-3) or the halogen atom in a ring other than both terminals of the condensed polycyclic skeleton, a higher voltage (VOC) is obtained in comparison to a compound that does not includes the substituent group.
In the compounds represented by Formulae (1) to (3), it is preferable that Za in Formula (1), Zc in Formula (2), and Ze in Formula (3) are represented by Formula (Z1-1), and at least one of R1 to R4 in Formula (Z1-1) is represented by an alkyl group, an alkenyl group, an alkoxy group, a halogen atom, a cyano group, a halogenated alkyl group, or a nitro group.
This configuration represents that among the compounds represented by Formulae (1) to (3), one of the rings of both terminals of the condensed polycyclic skeleton is composed of phenyl, and the phenyl group includes at least one selected from an alkyl group, an alkenyl group, an alkoxy group, a halogen atom, a cyano group, a halogenated alkyl group, and a nitro group as a substituent group. In this case, hydrophobicity is enhanced, and thus moisture resistance is improved. Accordingly, this configuration is advantageous.
In the compounds represented by Formulae (1) to (3), it is preferable that Za to Zf are represented by Formula (Z1-1), and at least one of R1 to R4 in Formula (Z1-1) is represented by an alkyl group, an alkenyl group, an alkoxy group, a halogen atom, a cyano group, a halogenated alkyl group, or a nitro group.
This configuration represents that in the compounds represented by Formulae (1) to (3), rings of both terminals of the condensed polycyclic skeleton are composed of phenyl, and at least one selected from an alkyl group, an alkenyl group, an alkoxy group, a halogen atom, a cyano group, a halogenated alkyl group, and a nitro group is included as a substituent group. In this case, hydrophobicity is enhanced, and thus moisture resistance is improved. Accordingly, this configuration is advantageous.
In the compounds represented by Formulae (1) to (3), it is preferable that Za to Zf in Formulae (1) to (3) are represented by Formula (Z1-1), at least one of R1 to R4 in Formula (Z1-1) is represented by an alkyl group, an alkenyl group, or an alkoxy group, and at least one of R1 to R4 in Formula (Z1-1) is represented by a halogen atom, a cyano group, a halogenated alkyl group, or a nitro group.
This configuration represents that in the compounds represented by Formulae (1) to (3), rings of both terminals of the condensed polycyclic skeleton are composed of phenyl, and at least one selected from an alkyl group, an alkenyl group, and an alkoxy group as a substituent group, and at least one selected from a halogen atom, a cyano group, a halogenated alkyl group, and a nitro group as another substituent group are included. In this case, hydrophobicity is enhanced, and thus moisture resistance is improved. In addition, a high voltage (VOC) is obtained. Accordingly, this configuration is advantageous.
Hereinafter, specific examples of the compounds represented by Formulae (1) to (4) will be described.
Here, in the compounds represented by Formulae (1) to (4), structures, which are advantageous to obtain a high voltage (VOC) and excellent moisture resistance, will be collectively described.
1. It is preferable that the both terminals of the condensed polycyclic skeleton are composed of phenyl, pyrrole, thiophene, pyridine, or furan to make the HOMO level of a compound deep, and to improve the voltage (VOC).
2. It is preferable that the condensed polycyclic skeleton does not include a hetero ring to improve hydrophobicity of the hole transporting material.
3. It is preferable that at least two substituent groups are additionally present in addition to rings of both terminals of the condensed polycyclic skeleton to make the HOMO level of the compounds deep and to improve the voltage (VOC).
4. When a hydrophobic substituent group, for example, an alkyl group, an alkenyl group, or an alkoxy group are employed in not only a condensed polycyclic skeleton but also rings of both terminals, hydrophobicity of a compound is further improved.
5. When an electron-withdrawing substituent group, for example, a halogen group, a cyano group, a nitro group, or a halogenated alkyl group is employed in both terminals of the condensed polycyclic skeleton, the HOMO level of a compound becomes deep, and thus the voltage (VOC) is improved.
Specific examples of more preferred compounds having the structures will be described below.
(In Formulae, “TIPS” represents triisopropylsilyl.)
A method of synthesizing the hole transporting material of the invention is not particularly limited, and the hole transporting material can be synthesized with reference to a method that is known in the related art. Examples of a method of synthesizing the compounds represented by Formula (1) to Formula (4) include Journal of American Chemical Society, 116, 925(1994), Journal of Chemical Society, 221(1951), Org. Lett., 2001, 3, 3471, Macromolecules, 2010, 43, 6264, Tetrahedron, 2002, 58, 10197, JP2012-513459A, JP2011-46687A, Journal of Chemical Research. miniprint, 3, 601-635(1991), Bull. Chem. Soc. Japan, 64, 3682-3686(1991), Tetrahedron Letters, 45, 2801-2803(2004), EP2251342A, EP2301926A, EP2301921A, KR10-2012-0120886A, J. Org. Chem., 2011, 696, Org. Lett., 2001, 3, 3471, Macromolecules, 2010, 43, 6264, J. Org. Chem., 2013, 78, 7741, Chem. Eur. J., 2013, 19, 3721, Bull. Chem. Soc. Jpn., 1987, 60, 4187, J. Am. Chem. Soc., 2011, 133, 5024, Chem. Eur. J. 2013, 19, 3721, Macromolecules, 2010, 43, 6264-6267, J. Am. Chem. Soc., 2012, 134, 16548-16550, and the like.
The hole transport layer of the invention may include another hole transporting material. Examples of the other hole transporting material include inorganic materials such as CuI and CuNCS, organic hole transporting materials described in Paragraphs 0209 to 0212 of JP2001-291534A, and the like. Examples of the organic hole transporting material include conductive polymers such as polythiophene, polyaniline, polypyrrole, and polysilane, Spiro compounds in which two rings share a central atom such as C or Si having a tetrahedral structure, aromatic amine compounds such as triarylamine, triphenylene compounds, nitrogen-containing heterocyclic compounds, and liquid-crystalline cyano compounds. Among the organic hole transporting materials, an organic hole transporting material which can be applied in a solution state and then has a solid shape is preferable, and specific examples thereof include 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene [2,2′,7,7′ -tetrakis-(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene: spiro-OMeTAD], poly(3-hexylthiophene-2,5-diyl), 4-(diethylamino)benzaldehyde diphenylhydrazone, poly(3,4-ethylene dioxythiophene) (PEDOT), and the like.
Although not particularly limited, the film thickness of the hole transport layer 3 is preferably 50 μm or less, more preferably 1 nm to 10 μm, still more preferably 5 nm to 5 μm, and still more preferably 10 nm to 1 μm. In addition, the film thickness of the hole transport layer 3 corresponds to an average distance between the second electrode 2 and the surface of the photosensitive layer 13, and can be measured by observing a cross-section of the photoelectric conversion element by using a scanning electron microscope (SEM) and the like.
[Second Electrode]
The second electrode 2 functions as a positive electrode in a solar cell. The second electrode 2 is not particularly limited as long as the second electrode 2 has conductivity. Typically, the second electrode 2 can be configured to have the same configuration as that of the conductive support 11. In a case where sufficient strength is maintained, the support 11a is not necessary.
It is preferable that the second electrode 2 has a structure having a high current-collection effect. At least one of the conductive support 11 or the second electrode 2 needs to be substantially transparent so that light reaches the photosensitive layer 13. In the solar cell of the invention, it is preferable that the conductive support 11 is transparent and solar light is incident from the support 11a side. In this case, it is more preferable that the second electrode 2 has a light-reflecting property.
Examples of a material used to form the second electrode 2 include metals such as platinum (Pt), gold (Au), nickel (Ni), copper (Cu), silver (Ag), indium (In), ruthenium (Ru), palladium (Pd), rhodium (Rh), iridium (Ir), osmium (Os), and aluminum (Al), the above-described conductive metal oxides, carbon materials, conductive polymers, and the like. The carbon materials may be conductive materials formed through bonding of carbon atoms, and examples thereof include fullerene, a carbon nanotube, graphite, graphene, and the like.
As the second electrode 2, a thin film (including a thin film obtained through vapor deposition) of a metal or a conductive metal oxide, or a glass substrate or a plastic substrate which has the thin film is preferable. As the glass substrate or the plastic substrate, glass including a gold or platinum thin film or glass on which platinum is vapor-deposited is preferable.
The film thickness of the second electrode 2 is not particularly limited, and is preferably 0.01 to 100 μm, more preferably 0.01 to 10 μm, and still more preferably 0.01 to 1 μm.
[Other Configurations]
In the invention, a spacer or a separator can also be used instead of the blocking layer 14 or in combination with the blocking layer 14 so as to prevent the first electrode 1 and the second electrode 2 from coming into contact with each other. In addition, a hole blocking layer may be provided between the second electrode 2 and the hole transport layer 3.
[Solar Cell]
The solar cell of the invention is constituted by using the photoelectric conversion element of the invention. For example, as illustrated in
For example, the invention is applicable to individual solar cells described in Nature, 499, p. 316(2013), J. Am. Chem. Soc., 2009, 131(17), p. 6050-6051, and Science, 338, p. 643(2012).
It is preferable that a lateral surface of the solar cell of the invention is sealed with a polymer, an adhesive, and the like so as to prevent deterioration, evaporation, and the like in constituent substances.
[Method of Manufacturing Photoelectric Conversion Element and Solar Cell]
The photoelectric conversion element and the solar cell of the invention can be manufactured in accordance with a known method, for example, a method described in Nature, 499, p. 316(2013), J. Am. Chem. Soc., 2009, 131(17), p. 6050-6051, Science, 338, p. 643(2012), and the like.
Hereinafter, the method of manufacturing the photoelectric conversion element and the solar cell of the invention will be described in brief.
In the manufacturing method of the invention, first, at least one of the blocking layer 14, the porous layer 12, or the electron transport layer 15 is formed on a surface of the conductive support 11 according to the purpose.
For example, the blocking layer 14 can be formed by a method in which a dispersion, which contains the insulating substance or a precursor compound thereof, and the like, is applied to the surface of the conductive support 11, and the dispersion is baked, a spray pyrolysis method, and the like.
A material that forms the porous layer 12 is preferably used as fine particles, and more preferably a dispersion that contains the fine particles.
A method of forming the porous layer 12 is not particularly limited, and examples thereof include a wet-type method, a dry-type method, and other methods (for example, a method described in Chemical Review, Vol. 110, p. 6595 (published on 2010)). In these methods, it is preferable that the dispersion (paste) is applied to the surface of the conductive support 11 or the surface of the blocking layer 14 and then the dispersion is baked at a temperature 100° C. to 800° C. for ten minutes to ten hours, for example, in the air. According to this, it is possible to bring the fine particles into close contact with each other.
In a case where baking is performed a plurality of times, a temperature in baking except final baking (a baking temperature except for a final baking temperature) is preferably set to be lower than the temperature in the final firing (the final baking temperature). For example, in a case where titanium oxide paste is used, the baking temperature except for the final baking temperature can be set in a range of 50° C. to 300° C. In addition, the final baking temperature can be set in a range of 100° C. to 600° C. to be higher than the baking temperature except for the final baking temperature. In a case where a glass support is used as the support 11a, the baking temperature is preferably 60° C. to 500° C.
The amount of a porous material applied to form the porous layer 12 is appropriately set in correspondence with the film thickness of the porous layer 12, the number of times of coating, and the like, and there is no particular limitation thereto. For example, the amount of the porous material applied per surface area 1 m2 of the conductive support 11 is preferably 0.5 to 500 g, and more preferably 5 to 100 g.
In a case where the electron transport layer 15 is provided, the layer can be formed in the same manner as in the hole transport layer 3 to be described below.
Subsequently, the photosensitive layer 13 is provided.
Examples of a method of providing the photosensitive layer 13 include a wet-type method and a dry-type method, and there is no particular limitation thereto. In the invention, the wet-type method is preferable, and for example, a method of bringing an arbitrary layer into contact with a light absorbing agent solution that contains a perovskite-type light absorbing agent is preferable. In the method, first, the light absorbing agent solution for forming the photosensitive layer is prepared. The light absorbing agent solution contains MX2 and AX which are raw materials of the perovskite compound. Here, A, M, and X are the same as A, M, and X in Formula (I). In the light absorbing agent solution, a molar ratio between MX2 and AX is appropriately adjusted in correspondence with the purpose. In a case of forming the perovskite compound as the light absorbing agent, the molar ratio between AX and MX2 is preferably 1:1 to 10:1. The light absorbing agent solution can be prepared by mixing MX2 and AX in a predetermined molar ratio and, preferably, by heating the resultant mixture. The formation liquid is typically a solution, but may be a suspension. Heating conditions are not particularly limited. A heating temperature is preferably 30° C. to 200° C., and more preferably 70° C. to 150° C. Heating time is preferably 0.5 to 100 hours, and more preferably 1 to 3 hours. As a solvent or a dispersion medium, the following solvent or dispersion medium can be used.
Then, the light absorbing agent solution, which is prepared, is brought into contact with a surface of a layer (in the photoelectric conversion element 10, a layer of any one of the porous layer 12, the blocking layer 14, and the electron transport layer 15) on which the photosensitive layer 13 is to be formed. Specifically, application of the light absorbing agent solution or immersion in the light absorbing agent solution is preferable. A contact temperature is preferably 5° C. to 100° C., and immersion time is preferably 5 seconds to 24 hours and more preferably 20 seconds to 1 hour. In a case of drying the light absorbing agent solution that is applied, with regard to the drying, drying with heat is preferable, and drying is performed by heating the applied light absorbing agent solution typically at 20° C. to 300° C., and preferably at 50° C. to 170° C.
In addition, the photosensitive layer can also be formed in conformity to a method of synthesizing the perovskite compound.
In addition, another example of the method includes a method in which an AX solution that contains AX, and an MX2 solution that contains MX2 are individually applied (including an immersion method), and are dried as necessary. In this method, an arbitrary solution may be applied in advance, but it is preferable that the MX2 solution is applied in advance. A molar ratio between AX and MX2, application conditions, and drying conditions in this method are the same as described above. AX or MX2 may be vapor-deposited instead of application of the AX solution and the MX2 solution.
Still another example of the method includes a dry-type method such as a vacuum deposition by using a compound or a mixture from which a solvent of the light absorbing agent solution is removed. For example, a method of simultaneously or sequentially vapor-depositing AX and MX2 may be exemplified.
According to the methods and the like, the perovskite compound is formed on the surface of the porous layer 12, the blocking layer 14, or the electron transport layer 15 as the photosensitive layer.
The hole transport layer 3 is formed on the photosensitive layer 13 that is provided as described above.
The hole transport layer 3 can be formed through application and drying of a hole transporting material solution that contains a hole transporting material. In the hole transporting material solution, a concentration of the hole transporting material is preferably 0.1 to 1.0 M (mol/L) when considering that application properties are excellent, and in a case of providing the porous layer 12, the hole transporting material solution easily intrudes into the pores of the porous layer 12.
After the hole transport layer 3 is formed, the second electrode 2 is formed, thereby manufacturing the photoelectric conversion element.
The film thicknesses of the respective layers can be adjusted by appropriately changing the concentrations of respective dispersion liquids or solutions and the number of times of application. For example, in a case where the photosensitive layers 13B and 13C having a large film thickness are provided, a light absorbing agent solution may be applied and dried a plurality of times.
The respective dispersion liquids and solutions described above may respectively contain additives such as a dispersion auxiliary agent and a surfactant as necessary.
Examples of the solvent or dispersion medium that is used in manufacturing of the photoelectric conversion element include a solvent described in JP2001-291534A, but the solvent or dispersion medium is not particularly limited thereto. In the invention, an organic solvent is preferable, and an alcohol solvent, an amide solvent, a nitrile solvent, a hydrocarbon solvent, a lactone solvent, a halogen solvent, and a mixed solvent of two or more kinds thereof are preferable. As the mixed solvent, a mixed solvent of the alcohol solvent and a solvent selected from the amide solvent, the nitrile solvent, and the hydrocarbon solvent is preferable. Specifically, methanol, ethanol, isopropanol, γ-butyrolactone, chlorobenzene, acetonitrile, N,N′-dimethylformamide (DMF), dimethylacetamide, and a mixed solvent thereof are preferable.
A method of applying the solutions or dispersants which form the respective layers is not particularly limited, and it is possible to use a known application method such as spin coating, extrusion die coating, blade coating, bar coating, screen printing, stencil printing, roll coating, curtain coating, spray coating, dip coating, an inkjet printing method, and an immersion method. Among these, spin coating, screen printing, and the like are preferable.
The photoelectric conversion element of the invention may be subjected to an efficiency stabilizing treatment such as annealing, light soaking, and being left as is in an oxygen atmosphere as necessary.
The photoelectric conversion element prepared as described above can be used as a solar cell after connecting the external circuit 6 to the first electrode 1 and the second electrode 2.
The photoelectric conversion element 10A and the solar cell illustrated in
[Preparation of Conductive Support]
As the transparent electrode 11b, a fluorine-doped SnO2 conductive film having a film thickness of 300 nm was formed on a glass substrate having a thickness of 2.2 mm as the support 11a, thereby preparing the conductive support 11.
[Preparation of Solution for Blocking Layer]
15% by mass of titanium diisopropoxide bis(acetylacetonate)/isopropanol solution (manufactured by Sigma-Aldrich Co. LLC) was diluted with 1-butanol, thereby preparing 0.02 M solution for a blocking layer.
[Formation of Blocking Layer]
The blocking layer 14 formed from titanium oxide, which has a film thickness of 100 nm, was formed on the SnO2 conductive film of the conductive support 11 by using the prepared 0.02 M solution for the blocking layer at 450° C. in accordance with a spray pyrolysis method.
[Preparation of Titanium Oxide Paste]
Ethyl cellulose, lauric acid, and terpineol were added to an ethanol dispersion liquid of anatase-type titanium oxide having an average particle size of 20 nm, thereby preparing titanium oxide paste.
[Formation of Porous Layer]
The prepared titanium oxide paste was applied onto the blocking layer 14 with a screen printing method, and was baked. Application and baking of the titanium oxide paste were respectively performed twice. With regard to a baking temperature and baking time, first baking was perfoimed at 130° C. for 1 hour, and second baking was performed at 500° C. for 1 hour. A baked body of the titanium oxide, which was obtained, was immersed in 40 mM TiCl4 aqueous solution, and was heated at 60° C. for 1 hour, and heating was continuously performed at 500° C. for 30 minutes, thereby forming the porous layer 12 formed from TiO2 in a film thickness of 500 nm.
[Formation of Photosensitive Layer]
A photosensitive layer was formed on the porous layer 12, which was formed as described above, as follows, thereby preparing the first electrode 1.
27.86 mL of 40% by mass methylamine/methanol solution, and 30 mL of aqueous solution of 57% by mass of hydrogen iodide (hydroiodic acid) were stirred in a flask at 0° C. for 2 hours, and were concentrated to obtain coarse CH3NH3I. The obtained coarse CH3NH3I was dissolved in ethanol and was recrystallized with diethylether. A crystal that precipitated was filtered and collected, and was dried under reduced pressure at 60° C. for 24 hours, thereby obtaining purified CH3NH3I.
Then, purified CH3NH3I and PbI2 were collected in a molar ratio of 2:1, and were stirred and mixed in γ-butyrolactone at 60° C. for 12 hours. Then, the resultant mixture was filtered with polytetrafluoroethylene (PTFE) syringe filter, thereby preparing a 40% by mass of light absorbing agent solution.
The prepared light absorbing agent solution was applied onto the porous layer 12 by a spin coating method under conditions of 2000 rpm for 60 seconds, and 3000 rpm for 60 seconds, the applied light absorbing agent solution was dried by using a hot plate at 100° C. for 40 minutes, thereby forming the photosensitive layer 13A formed from the perovskite compound CH3NH3PbI3.
In this manner, the first electrode was prepared.
The film thickness of respective layers was measured through observation with a scanning electron microscope (SEM) in accordance with the above-described method. The film thickness of the porous layer 12 was 500 nm, and a total film thickness of the porous layer 12 and the photosensitive layer 13A was 600 nm.
[Formation of Hole Transport Layers of Examples 1 to 37 by Using Hole Transporting Material of Invention, and Hole Transport Layer of Comparative Example 1 by Using Hole Transporting Material in Nature, 499, p. 316(2013)]
As a hole transporting material, the following Compounds 1 to 38 were prepared. Among these, Compounds 1 to 37 are compounds of the invention, and Compound 38 is spiro-OMeTAD described in Nature, 499, p. 316(2013). In the compound 38, “Me” represents methyl.
Respective hole transporting materials of 1.47×10−3 mol were dissolved in 1 mL of chlorobenzene solution, thereby preparing a hole transporting material solution.
Then, the prepared solution for the hole transport layer was applied onto the photosensitive layer in accordance with a spin coating method, and was dried, thereby forming a solid hole transport layer having a film thickness of 0.5 μm.
[Preparation of Second Electrode]
Gold was vapor-deposited on the hole transport layer 3, thereby preparing the second electrode 2 having a film thickness of 0.3 μm.
In this manner, photoelectric conversion elements 10 of Examples 1 to 37 and Comparative Example 1, which function as a solar cell, were manufactured.
[Evaluation of Voltage]
A voltage (VOC) of the solar cells was obtained as follows. A battery characteristic test was performed through irradiation of pseudo-solar light of 1000 W/m2 from a xenon lamp through an AM1.5 filter by using a solar simulator “WXS-85H” (manufactured by Wacom). Current-voltage characteristics were measured by using an I-V tester, thereby obtaining the voltage (VOC). For reference, the voltage (VOC) of the solar cell of Comparative Example 1 was set to 1, and the following evaluation criteria were employed.
Voltage is 1.1 or more times in comparison to Comparative Example 1: A
Voltage is 1.09 or more times and less than 1.1 times in comparison to Comparative Example 1: B
Voltage is 1.07 or more times and less than 1.09 times in comparison to Comparative Example 1: C
Voltage is 1.05 or more times and less than 1.07 times in comparison to Comparative Example 1: D
Voltage is 1.03 or more times and less than 1.05 times in comparison to Comparative Example 1: E
Voltage is greater than 1.00 times and less than 1.03 times in comparison to Comparative Example 1: F
Voltage is 1.00 or less times in Comparison to Comparative Example 1: G
[Evaluation of Moisture Resistance]
Initial conversion efficiency (η0) was measured by the same test method as in the above-described “Evaluation of Voltage”. Then, a solar cell was left as is under conditions of a temperature of 40° C. and humidity of 70% RH for 12 hours, and conversion efficiency (η) after being left in humidity was measured by the same test method as in “Evaluation of Voltage”. Moisture resistance was evaluated on the basis of a retention rate calculated as conversion efficiency (η) after being left in humidity/initial conversion efficiency (η0). The following evaluation criteria were employed.
Retention rate of conversion efficiency is 0.95 to 1.00: A
Retention rate of conversion efficiency is equal to or greater than 0.90 and less than 0.95: B
Retention rate of conversion efficiency is equal to or greater than 0.85 and less than 0.90: C
Retention rate of conversion efficiency is equal to or greater than 0.80 and less than 0.85: D
Retention rate of conversion efficiency is equal to or greater than 0.75 and less than 0.80: E
Retention rate of conversion efficiency is less than 0.75: F
Evaluation results of the voltage and the conversion efficiency are illustrated in the following Table 1.
From Table 1, it can be seen that the solar cells of Examples 1 to 37, in which the hole transporting materials of the invention were used, are more excellent in the voltage and the moisture resistance in comparison to the solar cell of Comparative Example 1 in which spiro-OMeTAD was used as a hole transporting material.
Particularly, Examples 7, 29, 30, 31, and 37 were excellent in both of the voltage and the moisture resistance. The hole transporting material used in the examples have the following common points.
Since both terminals of the condensed polycyclic skeleton are composed of phenyl, it is possible to make the HOMO level deep, and thus it is advantageous to improve the voltage (VOC).
Since a hetero ring is not present in the condensed polycyclic skeleton, it is advantageous to improve hydrophobicity.
Since at least two substituent groups are present in addition to rings of the both terminals of the condensed polycyclic skeleton, it is possible to make the HOMO level deep, and thus it is advantageous to improve the voltage (VOC).
Since a hydrophobic substituent group (alkyl group) is employed in not only the condensed polycyclic skeleton but also the rings of the both terminals, the hydrophobicity is further improved.
Since the electron-withdrawing substituent group (a halogen group, a cyano group, a nitro group, or a halogenated alkyl group) is employed in both terminals of the condensed polycyclic skeleton, it is possible to further make the HOMO level deep, and thus it is advantageous to improve the voltage (VOC).
| Number | Date | Country | Kind |
|---|---|---|---|
| 2015-130770 | Jun 2015 | JP | national |
This application is a Continuation Application of PCT Application No. PCT/JP2016/068155, filed Jun. 17, 2016 and based upon and claiming the benefit of priority from Japanese Patent Application No. 2015-130770, filed Jun. 30, 2015, the entire contents of all of which are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2016/068155 | Jun 2016 | US |
| Child | 15840408 | US |
