1. Field of the Invention
The present invention relates to a photomultiplier tube for detecting incident light from outside.
2. Related Background Art
Conventionally, compact photomultiplier tubes by utilization of fine processing technology have been developed. For example, a flat surface-type photomultiplier tube which is arranged with a photocathode, dynodes and an anode on a translucent insulating substrate is known (refer to Patent Document 1 given below). The above-described structure makes it possible to detect weak light at a high degree of reliability and also downsize a device.
However, in the above-described conventional photomultiplier tubes, individual stages of dynodes are arranged on an insulating substrate of a casing constituted with the insulating substrate and cap members, thereby giving such a structure that multiplied electrons, the orbit of which is widened as the electrons pass between secondary electron surfaces of these individual stages of dynodes, are easily made incident onto the insulating substrate of the casing. This tendency becomes apparent when the casing is downsized for refinement. Therefore, there has been a case where the casing is electrically charged to result in a decrease in withstand voltage.
Under these circumstances, the present invention has been made in view of the above problem, an object of which is to provide a photomultiplier tube capable of preventing electrons from being made incident onto an insulation part of a casing between dynodes to improve a withstand voltage.
In order to solve the above problem, the photomultiplier tube of the present invention is a photomultiplier tube which is provided with a first substrate and a second substrate which are arranged so as to oppose each other, with the respective opposing surfaces made with an insulating material, a side wall part which constitutes a casing together with the first and the second substrates, a plurality of stages of electron multiplying parts which are arrayed on the opposing surface of the first substrate so as to be spaced away sequentially from a first end side to a second end side and each of which has a secondary electron surface extending in a direction intersecting with the opposing surface, a photocathode which is installed on the first end side so as to be spaced away from the electron multiplying part, converting incident light from outside to photoelectrons to emit the photoelectrons, and an anode part which is installed on the second end side so as to be spaced away from the electron multiplying part to take out electrons multiplied by the electron multiplying parts as a signal, in which the opposing surface of the second substrate is formed so as to cover a plurality of electron multiplying parts, and a plurality of conductive members which are electrically independent from each other and set equal in potential to the individually opposing electron multiplying parts are installed along the opposing surface at sites opposing individually the plurality of electron multiplying parts on the opposing surface.
According to the above-described photomultiplier tube, incident light is made incident on the photocathode, by which the light is converted to photoelectrons, these photoelectrons are made incident sequentially into a plurality of stages of electron multiplying parts on the opposing surface of the first substrate and multiplied accordingly, and the thus multiplied electrons are taken out from the anode part as an electric signal. In this instance, a plurality of conductive members equal in potential to each of the opposing electron multiplying parts are installed so as to be electrically independent from each other at sites opposing each of the plurality of stages of electron multiplying parts on the opposing surface of the second substrate opposing the first substrate. Therefore, electrons passing between the plurality of stages of electron multiplying parts are prevented from being made incident onto the opposing surface of the second substrate. It is, thereby, possible to prevent a decrease in withstand voltage due to electric charge of the surface of the substrate.
It is preferable that the plurality of conductive members are formed in such a manner that each of the end parts thereof on the second end side projects to the second end side more than each of the end parts of the opposing electron multiplying parts on the second end side. In this instance, electrons passing between the stages of electron multiplying parts can be reliably prevented from being made incident onto the opposing surface of the second substrate.
It is also preferable that the plurality of conductive members are formed in such a manner that each of the end parts thereof on the first end side is positioned to the second end side more than each of the end parts of the opposing electron multiplying parts on the first end side. According to the above constitution, a distance between adjacent conductive members is secured, thus making it possible to suppress leakage current between the conductive members and also increase a withstand voltage.
Further, it is also preferable that the plurality of conductive members are connected to a plurality of power feeding parts installed on the second substrate and the plurality of electron multiplying parts are electrically connected to the individually opposing conductive members and powered from the plurality of power feeding parts. In this instance, the electron multiplying parts are powered via conductive members, thus simplifying a structure in which the conductive members are set equal in potential to the electron multiplying parts.
Hereinafter, a detailed description will be given for preferred embodiments of the photomultiplier tube related to the present invention by referring to drawings. In addition, in describing the drawings, the same or corresponding parts will be given the same numeral references to omit overlapping description.
The photomultiplier tube 1 shown in
In addition, in the following description, the upstream side of an electron multiplying channel (the side of the photocathode) along a direction at which electrons are multiplied is given as “a first end side,” while the downstream side (the side of the anode part) is given as “a second end side.” Further, a detailed description will be given for individual constituents of the photomultiplier tube 1.
As shown in
The side-wall frame 3 is constituted with a rectangular flat-plate like silicon substrate 30 as a base material. A penetration part 301 enclosed by a frame-like side wall part 302 is formed from a main surface 30a of the silicon substrate 30 toward an opposing surface 30b thereto. The penetration part 301 is provided with a rectangular opening and an outer periphery of which is formed so as to run along the outer periphery of the silicon substrate 30.
Inside the penetration part 301, the focusing electrodes 37, the electron multiplying part 31 and the anode part 32 are formed from the first end side to the second end side. These focusing electrodes 37, the electron multiplying part 31 and the anode part 32 are formed by processing the silicon substrate 30 according to RIE (reactive ion etching) or others and made mainly with silicon. The focusing electrodes 37 are electrodes for guiding photoelectrons emitted from the photocathode 22 to be described later into the electron multiplying part 31 and installed between the photocathode 22 and the electron multiplying part 31. The electron multiplying part 31 is constituted with N stages (N denotes an integer of two or more) of dynodes (electron multiplying parts) set different in potential along a direction at which electrons are multiplied from the photocathode 22 to the anode part 32 and provided with a plurality of electron multiplying channels (channels) at each stage. The anode part 32 is arranged at a position holding the electron multiplying part 31 together with the photocathode 22. The focusing electrodes 37, the electron multiplying part 31 and the anode part 32 are respectively connected to the lower frame 4 by anode joining, diffusion joining and joining using a sealing material such as a low-melting-point metal (for example, indium), by which they are arranged on the lower frame 4 two-dimensionally (the details will be described later). In addition, inside the penetration part 301, columnar parts (not illustrated) which electrically connect the photocathode 22 with conductive terminals 201 for the photocathode 22 are also formed. Further, the electron multiplying part 31, the focusing electrodes 37 and the anode part 32 are individually connected to the corresponding conductive terminals 201 inside the penetration part 301 (the details will be described later) and set in a predetermined potential via the conductive terminals 201. For example, where dynodes are constituted at ten stages, a voltage of 100 to 1000V is applied in incremental steps at every 100V intervals to the photocathode 22 at ten stages of dynodes, and a voltage of 1100V is applied to the photocathode 22 at the anode part 32.
The lower frame 4 is constituted with a rectangular flat-plate like glass substrate 40 as a base material. The glass substrate 40 forms an opposing surface 40a which opposes the opposing surface 20a of the wiring substrate 20 by glass which is an insulating material. The photocathode 22 which is a transmission-type photocathode is formed at a site opposing the penetration part 301 of the side-wall frame 3 on the opposing surface 40a (a site other than a region joining with the side wall part 302) and at the end part opposite to the side of the anode part 32.
Next, the internal structure of the photomultiplier tube 1 will be described in more detail by referring to
As shown in
The photocathode 22 is installed so as to be spaced away from the 1st stage dynode 31a to the first end side on the opposing surface 40a behind the focusing electrode 37, and the photocathode 22 is formed on the opposing surface 40a of the glass substrate 40 as a transmission-type photocathode. When incident light transmitted from outside through the glass substrate 40, which is the lower frame 4, arrives at the photocathode 22, photoelectrons corresponding to the incident light are emitted, and the photoelectrons are guided into the electron multiplying part 31 by the focusing electrodes 37.
The anode part 32 is installed so as to be spaced away from the tenth dynode 31j to the second end side on the opposing surface 40a, and the anode part 32 is an electrode for taking out electrons which are multiplied by the electron multiplying part 31 in a direction indicated by the arrow B as an electric signal.
Further, as shown in
For example, where the thickness of the upper frame 2, that of the side-wall frame 3 and that of the lower frame 4 along a direction at which light is made incident are respectively 0.5 mm, 1.0 mm and 0.5 mm, the thickness of a sealing part for sealing the upper frame 2 and the side-wall frame 3 under vacuum in a direction at which light is made incident is 0.05 to 0.1 mm and the width of dynodes 31a to 31j which constitute the electron multiplying part 31 along a direction at which electrons are multiplied is about 0.2 mm, the conductive layers 21a to 21j are set so as to be about 0.2 mm in width along a direction at which electrons are multiplied and about 0.02 mm in membrane thickness, and deviations from the end parts of the dynode 31a to 31j on the first and second end side are both set to be 0.05 mm. In this instance, the width of each of the dynodes 31a to 31j along a direction at which electrons are multiplied can be adjusted in a range from about 0.2 to about 0.5 mm, and the width of each of the conductive layers 21a to 21j along a direction at which electrons are multiplied can also be adjusted accordingly.
According to the above described photomultiplier tube 1, incident light is made incident onto the photocathode 22, thereby converted to photoelectrons, and the photoelectrons are multiplied by being made incident into a plurality of stages of electron multiplying parts 31 on the glass substrate 40, and the thus multiplied electrons are taken out as an electric signal from the anode part 32. In this instance, on the opposing surface 20a of the upper frame 2 which opposes the lower frame 4, the plurality of conductive layers 21a to 21j equal in potential respectively to the dynodes 31a to 31j are installed at sites opposing the respective leading ends of a plurality of stages of dynodes 31a to 31j. It is, therefore, possible to prevent electrons passing between secondary electron surfaces 33 of the plurality of stages of dynodes 31a to 31j from being made incident onto the opposing surface 20a of the upper frame 2. Thereby, it is possible to prevent a decrease in withstand voltage due to electric charge of the surface of the substrate. For example, where no conductive layer is installed on the opposing surface 20a of the wiring substrate 20 (
Further, in the conductive layers 21a to 21j installed on the wiring substrate 20, each of the end parts thereof on the second end side projects to subsequent stages of the dynodes 31a to 31j (or the side of the anode part 32) and deviates to the second end side. It is, thereby, possible to more reliably prevent electrons passing between the stages of dynode 31a to 31j from being made incident onto the opposing surface 20a of the upper frame 2.
Still further, in the conductive layers 21a to 21j, each of the end parts thereof on the first end side deviates to the second end side with respect to the dynodes 31a to 31j and is included in a range opposing the leading ends of the dynodes. It is, thereby, possible to secure each distance between adjacent conductive layers 21a to 21j, to suppress leakage current between the conductive layers and also to increase a withstand voltage to a greater extent.
In addition, the plurality of conductive layers 21a to 21j are set equal in potential to the opposing dynodes 31a to 31j. If the conductive layers are set lower in potential than the opposing dynodes, a force which pushes back electrons will be increased but multiplication efficiency of electrons by secondary electron surfaces will be decreased. On the other hand, if they are set equal in potential, it is possible to prevent electrons from being made incident onto the substrate surface and also keep the multiplication efficiency of electrons. Further, the dynodes 31a to 31j are allowed to be powered via the conductive layers 21a to 21j, by which a structure can be made simple where the conductive layers 21a to 21j are set equal in potential to the dynodes.
In addition, the present invention shall not be limited to the above described embodiments. For example, the width of a conductive layer formed on the wiring substrate 20 along a direction at which electrons are multiplied may be modified in the following manner.
For example, as shown in
In addition, in the present embodiment, the photocathode 22 is a transmission-type photocathode but may be a reflection-type photocathode. Further, the anode 32 may be arranged between the dynode 31i and the dynode 31j.
Number | Date | Country | Kind |
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