BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated into and form a part of the specification, illustrate several embodiments of the present invention and, together with the description, serve to explain the principles of the invention. The drawings are only for the purpose of illustrating a preferred embodiment of the invention and are not to be construed as limiting the invention. In the drawings:
FIG. 1 is a simplified circuit diagram of the present invention with capacitive energy storage elements connected in a bipolar charge configuration;
FIG. 2 is a simplified circuit diagram of the present invention (as shown in FIG. 1) with a Type A pulse forming network on the output of the Marx generator;
FIG. 3 is a simplified circuit diagram of the present invention (as shown in FIG. 1), with a first harmonic pulse shaping network at the input of the Marx generator;
FIG. 4 is a representative output voltage waveform for a compensated Photon Initiated Marx Generator similar to that shown in FIG. 3;
FIG. 5 is a schematic for a six stage Photon Initiated Marxed Pulse Forming Network with seven section, Type E PFN's;
FIG. 6 is a representative output voltage waveform for a multiple-stage Photon Initiated Marxed-PFN as depicted by the schematic shown in FIG. 5;
FIG. 7 is a possible mechanical configuration for a six stage Marxed-PFN;
FIG. 8 is a photograph of a prototype PFN interfaced to an photon initiated thyristor and resistive load cell;
FIG. 9 is an example of the un-tuned current waveform obtained from the circuit shown in FIG. 8;
FIG. 10 is a side view drawing of a 1 cm by 3 cm Photon Initiated Thyristor;
FIG. 11 is an end view drawing of a 1 cm by 3 cm Photon Initiated Thyristor showing the axial groove for the fiber optic cable;
FIG. 12 is a photograph of a 1 cm by 3 cm Photon Initiated Thyristor mounted into an insulating holder;
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Best Modes for Carrying Out the Invention
One preferred embodiment of the present invention is depicted in FIG. 1. The portion of the circuit commonly known as a Marx “Stage” is enclosed by the dashed lines. The inventive device can contain an arbitrary number of Marx Stages, denoted in FIG. 1 by the letter “N”. Each stage consists of an energy storage device, shown in FIG. 1 by capacitors C1 through CN; a photon initiated (or controlled) semiconductor switch, shown in FIG. 1 by switches Sw1 through SwN; and two charge/isolation elements, shown in FIG. 1 by the positive side elements CHG1+through CHGN+; and by the negative side elements CHG1-through CHGN−. The capacitive energy storage elements may be replaced with Pulse Forming Networks to generate a flat-topped pulse on the load.
Operation of the inventive device has two phases: a charge phase and a discharge phase. The charge phase proceeds as follows: While all of the switches S1 through SN, in FIG. 1, are in the open circuit condition; a power supply (or power supplies), denoted by reference number PS1, charges the energy storage elements (or Pulse Forming Networks) denoted by C1 through CN; (via the charge-isolation elements) to the pre-determined voltage, and holds the specified voltage at high precision until the discharge cycle is initiated to create an output pulse at the desired repetition rate. The power supply (or supplies) charge the energy storage elements in parallel through the charge/isolation elements, denoted by the positive side elements CHG1+through CHGN+; and by the negative side elements CHG1-through CHGN−, which can be passive elements such as resistors or inductors, or active elements, including diodes or either electrically or optically triggered semiconductor switches. The type of charge/isolation element is not important for single shot Marx generators, but for repetition rate systems, the energy dissipation during the charge and discharge cycles can result in low system efficacy. Hence, resistors are typically not a good choice for repetition rate systems. While inductors can be low loss devices during the charge cycle, inductance values sufficient to prevent recirculation losses during the discharge cycle can be difficult to obtain and may require magnetic materials. Moreover these elements can represent an undesirable inductive load for switching power supplies. This effect can be mitigated, however by using bifilar windings, which minimize the inductance seen by the power supply, but maintain high recirculation inductance during the discharge cycle.
After the charge cycle is complete, the discharge cycle (Marx “erection”) is initiated by triggering the semiconductor switches shown in FIG. 1, and denoted by reference numbers Sw1 through SwN. The switches can be triggered either simultaneously or in sequence by illuminating them with photons from an optical source (or sources). The photons are delivered to the semi-conductor switches either directly from the optical source (or sources), or transmitted by fiber optic cables that are fed by one or more photon sources. The photons create electron-hole pairs within the body of the semiconductor, thereby increasing the quantity of charge carriers and initiating current conduction. A variety of semiconductor materials may be used for the switch, including Silicon, Silicon-Carbide, Gallium-Nitrate, etc. Moreover the semiconductor switch may be either a homogeneous bulk material, or a multi-layer device, such as a five layer asymmetric thyristor. A small quantity of photons may be used to initiate current conduction, which may be sustained by self generated charge carriers (such as an optically triggered thyristor); or large quantities of photons may be rapidly supplied to the switch in order to generate sufficient quantities of charge carriers to support the entire switch conduction cycle. Following commencement of switch conduction, the electrostatic energy storage devices (denoted by C1 through CN in FIG. 1) that were charged in parallel to the power supply (reference PS1) voltage (V0), are connected in series by the switches, thereby multiplying the voltage to N*V0 at the load element (reference Load1), where N is the number of Marx stages. If pulse forming networks (PFN's) are substituted in place of capacitors (as shown by reference numbers C1 through CN in FIG. 1); then the output voltage across the load is decreased. The maximum efficiency and best pulse shape are obtained when the load element is predominately resistive and is equal to N times the characteristic impedance of the pulse forming networks. When this condition is met, the voltage across the resistive load is a single rectangular shape with a voltage equal to (N/2)*V0, and the pulse duration is determined by the pulse forming network capacitor and inductor values. The photon initiated semiconductor switches may be installed in series, to increase the Marx stage voltage; in parallel, to increase the di/dt, peak current, or energy transfer capabilities of the system; or in a series/parallel configuration to simultaneously optimize the parameters. Resistive or capacitive elements may be installed to grade static or transient pulses across series connected switches, or to insure current sharing in parallel switches. The switches may be constructed of a variety of sizes and aspect ratios to optimize the switch performance to the discharge properties. For example, rectangular switches can yield inherently lower inductance circuits and are therefore advantageous when fast risetimes are required. More than one fiber or optical source may be used to illuminate each switch. Moreover, saturable magnetic cores may be installed in series with each switch (or switch stack) to delay the current surge until the plasma has spread throughout a larger volume of the switch body, thus enabling higher current and di/dt. Finally, the generator may be constructed of two or more parallel Marx generators in order to drive low impedance loads while staying within the capabilities of the optical switches.
There are also numerous ways of shaping the output pulse to obtain the desired voltage and current amplitudes and waveforms on the load without using Pulse Forming Networks. A Marx generator that uses capacitors to store the energy, naturally generates a double exponential wave shape across a predominately resistive load: where, the pulse risetime is typically dominated by a function of the erected Marx inductance divided by the load resistance, and the fall time is typically dominated by a function of the erected Marx capacitance times the load resistance. However, the Photon Initiated Marxed Modulators described herein, are capable of generating rectangular, flat-topped pulses by adding various pulse shaping components at either the output (high voltage), or input (ground side) of the Marx circuit. For example, a Type-A Pulse Forming Network, consisting of series connected sets of parallel connected capacitors and inductors can be installed at the output of the Marx as shown in FIG. 2. Each set of parallel capacitors and inductors, referenced by the dashed box in FIG. 2, represent one section of a Type-A PFN. Depending on the desired pulse shape on the load, there would typically be from three to five PFN sections installed at the output of the Marx generator. Alternatively, FIG. 3 demonstrates that one or more inductors may be installed in parallel with the first few Marx stages to generate a correction to the RC fall time nominally associated with a Marx generator with capacitive energy stores. Additional photon initiated switches (referenced by SWR); and possibly resistors denoted by R11 may be installed in series with the inductors as shown in FIG. 3. The capacitor values (CR1 and CR2) for the Marx stage (or stages) associated with this pulse shaping correction circuit may be different than that of the remaining Marx stages; and the charge voltage amplitude and polarity may also be different than that applied to the remaining Marx stages. These circuits are typically designed to be odd harmonics of the desired fundamental frequency at the load. The switches (SW1 and SW2) associated with the Marx stages that are included in the pulse shape correction circuit may be fired earlier or later than the remaining Marx stage switches. If additional switches (SWR) are installed in series with the inductors, the firing time of these switches may be optimized to obtain the desired pulse shape at the load. The voltage pulse can thereby be tailored to be flat, or to ramp up (or down) with a specific slope. The risetime of the pulse is still dominated by the erected Marx inductance of the Marx divided by the load resistance; but the pulse fall time can be adjusted by switch timing; selection of component (capacitors, inductors, and resistors) values; and charge voltage on the low end Marx capacitors. An additional switch may be installed in parallel with the harmonic inductor(s) (L11) to effectively crowbar the harmonic ringing circuit, thereby decreasing the pulse fall time.
Examples of possible embodiments of this invention are included as follows:
Example 1
The accelerating cavities for linear accelerators are frequently powered by radio frequency electromagnetic pulses that are produced by klystrons. This invention can satisfy the requirements of such klystrons: for example, a Photon Initiated Marxed-PFN pulse generator can produce low ripple 500 kV, 530 A, 1.6 microsecond flattop pulses with rise and fall times of less than 300 nanoseconds at repetition rates of at least 120 Hz by Marxing sixty, 15.7 Ohm PFN's via photon initiated thyristors. Six, Marxed-PFN's are shown in FIG. 4. The output voltage waveform into a dual klystron load for a twelve stage Photon Initiated Marxed-PFN is shown in FIG. 5. The photons required to trigger (and possibly sustain) the photon initiated switches for this configuration can be supplied in a variety of manners, such as a single Q-switched Nd:YAG laser that feeds a fiber optic bundle, thus providing photons to each of the sixty switches via one or more fiber optic cables. The fiber optic cables can be either the same length in order to trigger all of the switches simultaneously, or their lengths can be adjusted to sequentially trigger the switches in the Marx generator. The impedances of the PFN's can be modified slightly in sequential sets to further smooth the flattop portion of the pulse. FIG. 6 demonstrates a possible mechanical configuration for such a circuit. FIG. 6 shows only six Marx stages, but this is expandable to a much larger number of stages.
Example 2
Many High Power Microwave devices, such as Magnetically Insulated Line Oscillators (MILO's), Relativistic Magnetrons, Ubitrons, etc., require relatively flat-topped pulses. These devices range in impedance from approximately ten to one hundred Ohms and require pulse durations ranging from about 100 nanoseconds to more than 1 microsecond. Since these devices typically do not demand the extreme flat-topped pulses required by klystrons for linear accelerators, the waveforms can be generated by adding correction circuits to Marx generators with capacitor energy storage (as shown in FIG. 3), thereby reducing the component count manifest to the Marxed-PFN topology. An example of such a circuit, designed to drive a 500 kV, 200 ns flat-topped pulse into a ten Ohm MILO, is shown in FIG. 7, which is a manifestation of the basic circuit shown in FIG. 3. A typical waveform for the circuit shown in FIG. 7 is shown in FIG. 8. Numerous other extensions of the basic circuit concept are feasible.
Example 3
Present and future requirements for compact, lightweight, robust, rep-rate sources for High Power Microwave Directed Energy (DE) applications cannot be met with conventional components or pulsed power generator circuits. Switching and elimination of pulse transformers and/or water lines are crucial issues for these systems. Semiconductor switched, Marxed PFN circuits are potentially one of the best hopes for achieving a quantum leap in this arena as such devices could potentially eliminate the need for intermediate store water lines and their attendant ancillary support systems. Impulse radars are representative of one such potential application for these versatile pulse generators. No Pulse Forming Networks are required, as a simple L/R current rise and RC decay are well suited to this application. Required risetimes of less than 1 nanosecond and fall times of 4-10 nanoseconds can be achieved with this invention.
Example 4
For devices that require extreme flattop pulses, but can tolerate some energy loss, the basic circuits shown in FIGS. 1, 2 and 3 can be equipped with a high voltage metal oxide varistor stack connected between the high voltage output and the load. These varistors, which are commonly used by the electric utility sector for lightening protection, clip off voltages greater than their threshold voltage. Hence, they can be used to clamp the output voltage at a specified level, thus improving on the flat-top portion of the pulse. Varistors will not affect either the rise or fall portions of the pulse. Providing the pulse is relatively flat to start with, the energy lost in the varistors will be small compared to the energy delivered to the load. Varistors would typically not be used with a simple capacitor energy store Marx generator because the energy loss associated with flattening the double exponential pulse would be significant, and the pulse would still have a very long fall time, commensurate with the RC time constant of the Marx generator erected capacitance and load resistance. Further, varistors are non-linear devices whose impedance is a function of the current, making it impossible to obtain an extremely flat pulse from a capacitor energy store Marx generator equipped with a varistor stack.
The preceding examples can be repeated with similar success by substituting the generically or specifically described elements and/or operating conditions of this invention for those used in the preceding examples.
EXPERIMENTAL RESULTS
A test stand, comprising a single pulse forming Marx stage with an impedance of 16 Ohms was constructed to produce a rectangular 1.6 microsecond flattop pulse; manifest to a klystron drive application to produce the radio frequency energy required to power linear accelerators. The photon initiated semiconductor switch was designed for the following requirements: switched voltage: 17 kilovolts; current: 530 amps; risetime: <200 nanoseconds; charge transfer: ˜0.001 Coulombs/pulse; switched energy: 8 joules per pulse; jitter: <1 nanosecond; repetition rate: >120 pulses per second; pulse width (duration) 1.6 microseconds; and lifetime: ˜109 pulses. These parameters were chosen because these are the requirements specified for klystron powered radio frequency linear accelerator applications. An existing Photon Initiated Thyristor was employed as the switch, and ceramic capacitors were used for the PFN energy storage elements. A single long solenoid type inductor was tapped with turns that resulted in the desired pulse shape. The PFN used seven Pulse Forming sections for these tests. Each section consisted of two parallel, 20 kV, 4 nF ceramic capacitors, to yield a section capacitance of 8 nF. The inductor was constructed by wrapping #10 solid copper wire around a 2.5″ diameter PVC pipe that had partial grooves cut by a lathe with a pitch of 5 turns per inch. The distance between section (capacitor) centers was 2.5″; hence there were ˜12.5 turns per section.
The completed PFN was interfaced with a quasi-symmetric thyristor with onboard laser diode illumination arrays at its anode and cathode surfaces; and terminated with a sixteen Ohm resistive load, as shown in FIG. 8. The photon initiated semiconductor switch was a ˜0.64 cm2 active area silicon device. The switch held off the full design voltage of 16.7 kV, and conducted the full current, di/dt, and action commensurate with a full power Marxed-PFN stage. Samples of the current waveform are shown in FIG. 9, demonstrating a two hundred nanosecond (200 ns) risetime to approximately five hundred and thirty (530) amps, and a relatively flattop voltage pulse with a duration of approximately 1.6 microseconds. The continuous repetition rate PFN discharge testing was limited to five pulses per second (5 pps) due to power supply limitations in the present test bed.
Following the full action switch demonstration, the Test Stand was reconfigured to demonstrate the switch recovery capability at one hundred and twenty (120) Hertz. The PFN was removed and replaced with a capacitor to reduce the action. The holdoff voltage remained the same, the current and di/dt were increased significantly, and the action was decreased significantly—to minimize heat buildup in the switch. The device was operated at one hundred and twenty (120) Hertz for a thirty second burst in order to document switch recovery and holdoff. The one hundred and twenty (120) Hertz demonstration was conducted with reduced charge transfer action in order to stay within the present power limitations for the test bed. The test was significant, however, because it demonstrated recovery to full blocking voltage in a representative inter-pulse interval commensurate with one hundred and twenty (120) Hertz operation. These switches have a minority carrier lifetime of between sixty (60) and one hundred (100) microseconds; which scales to repetitive operation beyond one thousand (1000) Hertz.
A second prototype photon initiated thyristor switch with a 1 cm by 3 cm cross-section, as shown in FIG. 10, FIG. 11, and FIG. 12 was illuminated with photons from a Nd:YAG laser delivered by a fiber optic cable. The fiber optic cable coating was selectively removed to permit the light to escape axially along the length of the switch.
CONCLUSION
The features of this invention allow construction and operation of a variety of high voltage, high repetition rate pulse generators of the Marx type that are switched with photon initiated semiconductor switches. These photon initiated semi-conductor switches can be constructed with bulk materials or in layered devices such as thyristors. Variations on the invention permit the formation of nearly rectangular, flat-topped, high voltage pulses. Although the invention has been described in detail with particular reference to these preferred embodiments, other embodiments can achieve the same or nearly identical results without departing from the scope of the invention. Variations and modifications of the present invention will be obvious to those skilled in the art and it is intended to cover in the appended claims all such modifications and equivalents. The entire disclosures of all references, applications, patents, and publications cited above are hereby incorporated by reference.
Patent Application
20080036301
