The disclosure relates to multiple fiber lasers and amplifiers integrated with a photonic integrated circuit (PIC).
The silicon photonic platform can he made with extremely high yield because of the near-ideal starting wafers and the maturity of silicon processes developed for electronics. These desirable features have led to the success of silicon photonics broadly implemented in industrial and scientific applications. The spectroscopic measurements, wavelength division multiplexing (WDM), frequency modulated light detection and ranging (LIDAR), optical coherence tomography (OCT), biomedical and, of course, telecommunication are just a few fields greatly benefiting from the use of silicon photonics. The popularity of silicon (Si) is readily explained by its natural abundance and transparency to the electromagnetic field in the O- and C-bands (1230-1260 nm and 1530 to 1565 nm, respectively.)
Silicon photonics, tor all its benefits with functionality and yield, still lacks a monolithically integrated light source. Silicon and related group IV materials, such as Ge, are indirect bandgap semiconductors, and thus it is very difficult to create an efficient light source on silicon. In recent years the lasers, using silicon photonics technology, have attracted considerable interest due to the potential low-cost fabrication in CMOS foundries, borrowed from the microelectronics industry. Their integration/co-packaging with a PIC can lead to a total silicon photonics solution for future low-cost and small form factor coherent modules. The PIC systems include SiO2PIC or Planar Lightwave Circuits (PLCs), silicon-on-insulator also referred to as silicon photonics (SiP), lithium niobate (LiNbO3), and III-V PICs, such as InP and GaAs. While silicon photonic lasers can be a cost- and space-efficient solution, their commercialization has not been successful due to a few limitations.
First, silicon photonics devices suffer from large on/off-chip optical coupling loss. The resultant laser output power is not sufficient to compensate for the large insertion loss PIC and modulation loss if a modulator is used. Secondly, the propagation loss of silicon waveguide is much greater than that among free-space optical components and other material systems such as silica or silicon nitride. This prevents the use of long external cavities to generate more ‘pure’ and lower noise lasing light, which is a key enabler for high-order modulation formats to carry more information. Thirdly, silicon material is very sensitive to the thermal disturbances, for example, from package temperature changes or gain medium current changes. As a result, cost-efficient and technically viable integration of high-performance light sources into SiP circuits remains a challenge. The above and other limitations explain why silicon photonics still lacks a monolithically integrated light source.
Yet several approaches have been proposed to integrate gain medium onto a silicon photonic circuit such as the III-V material coupled via lenses or free space. Unfortunately, this approach requires a sealed package known as the gold box which renders the packages cost inefficient. Another approach is to integrate the III-V material via edge coupling, vertical coupling, bonding or direct hetero-epitaxy of these materials on Si. All of the above-disclosed approaches can be compatible with non-hermetic packages, but the use of the III-V material introduces the known limitations including a patterning effect for amplification and high temperature sensitivity. Additionally, if polarization insensitive devices are required, and they usually are, the saturation power is reduced limiting thus the output power.
Fairly recently, attempts have been made to integrate erbium-doped waveguide amplifiers (EDWA) on a PIC, but the performance of these photonic devices is far from the standards required by commercial applications. Yet the integration of EDWAs on silicon is very promising. Indeed, coherent communications have revolutionized core networks and are expected to take over a large share of the market in metropolitan and inter-datacenter networks in the very near future. As modulation formats are moving to higher order of constellation, narrow linewidth lasers with the external cavity are simply irreplaceable. However, as mentioned above, the problem with the known integration methods remains, i.e., the laser cavity length is defined by a PIC and therefore has a limited length due to a small footprint and loss limitations.
A close relative of EDWA is erbium-doped fiber gain media. Generally, fiber to PIC coupling methods are known and include edge-coupling, grating-coupling, and most recently evanescent-coupling—each having their own performance advantages and limitations. The fiber-based gain medium on silicon offers longer cavities reducing the laser linewidth, provides an efficient amplification, has no patterning effect, minimizes temperature sensitivity and increases high output power. Yet the fiber gain media have been only used for laser generation with discrete devices such as opto-VSLI-processors, isolators with a silicon photonics (SiP) micro-ring, WDM couplers and polarization controller, SiP Bragg grating with WDM coupler, optical circulator and an erbium doped fiber (EDF) all located within a fiber loop outside the PIC. The abundance of optical passive and active elements within the fiber loop increases the footprint of a photonic device.
One of the reasons for slow developments of integrated fiber lasers and amplifiers is the necessity of pumping fiber-based gain media by respective dedicated pumps each of which is typically configured as an off-board diode laser. The pumps add cost and complexity to hybrid photonic laser systems which is, of course, a strong deterrent to the use of integrated EDFAs.
A need therefore exists for a broad application of the fiber-based gain media integrated in various photonic circuits and allowing for high performance and multiple functionalities on a single PIC.
Another need exists for multiple fiber gain media on a single PIC sharing a single pump.
The invention illustrated by the disclosed structural examples satisfies these needs. The examples are structurally and functionally interrelated and, as will be more apparent from the following description, can be combined with one another or used individually without contradicting the inventive concept.
The inventive concept provides for the integration of a fiber-based gain medium and a PIC as components of a non-hermetic photonic device. Provided with at least one fiber gain medium, the PIC of the inventive photonic device is integrated with Si photonic passive and active elements, while a fiber link between the gain medium and PIC is substantially free from these elements. The photonic device is characterized by a high performance including a narrow linewidth, high power tunable laser with no temperature dependence and no patterning effects and high saturation power for a high output power of the amplifier section.
Accordingly, the inventive hybrid photonic device is configured with a PIC, one or multiple gain media or active fibers (i.e., fibers doped with fight emitters such as ions of rare earth elements) coupled to the PIC, and at least one external pump common to at least some of all active fibers. The inventive photonic device may have a simple resonant cavity with practically limitless on-chip capability in accordance with any given task at hand and is characterized by a low power consumption and low cost. In case of multiple fiber-based gain media, the number of pumps in the inventive configuration varies between one (1) and, wherein n is at least one less than the number of active fibers. If the situation requires that each gain medium is energized by a designated pump, then this invention does not exclude such a configuration. Preferably, but not necessarily, the pump includes a diode laser consuming no more than a few mW. Alternatively, the pump may be configured, for example, as a fiber laser or have any other suitable configuration.
In accordance with one example of the inventive photonic circuit, the gain media include at least one active fiber having one or both fiber ends coupled to the PIC. The active fiber and the PIC form a hybrid resonant cavity therebetween defined between a pair of spaced reflectors. The reflectors may be provided in the fiber or fiber and chip, respectively or only in the chip and spaced apart to define therebetween an extended resonant cavity. Preferably, all fiber gain mediums are in direct optical communication with the PIC forming thus respective fiber links all free of active and passive photonic elements, which in turn, are integrated in the PIC. However, as known to one of ordinary skill, a fiber-based gain medium may be configured with a pair of input and output transverse single mode fibers spliced to respective opposite ends of the active fiber with a free end of the output passive fiber being optically coupled to the PIC. The configuration of the reflectors may include fiber Bragg gratings, fiber ring mirrors, mirrors integrated in the PIC, Sagnac loop mirrors and others known in the art. Preferably, the laser is tunable.
The exemplary photonic circuit is further configured with at least one or more fiber amplifiers coupled to the PIC and operative to amplify respective input and output light signals. Similar to the gain medium forming a hybrid resonant cavity with the PIC, all fiber amplifiers define respective fiber links free active and passive photonic device which are thus integrated with the PIC. A spatial filter may be added externally to the PIC or internally onto it to filter out the desired wavelength of the output light signal.
The pump light emitted by a single pump can be coupled into the fiber laser and fiber amplifiers in accordance with several pumping schemes. For example, the pump light can be directly injected into all active fibers outside the PIC. Alternatively, pump light can be coupled into the active fibers through the PIC.
The above and other examples, features and functions of the inventive PIC will become more readily apparent from the specific description illustrated by the following drawings:
The following description provides an illustration and a further understanding of the inventive concept, but is not intended as a definition of the limits of the present disclosure. The following disclosure, together with the drawings, serve to explain principles and operations of the described inventive concept. In the figures, each identical or nearly identical component that is illustrated in various figures is represented by a like numeral. For purposes of clarity, not every component may be labeled in every figure.
Depending on the configuration of the resonant cavity of gain medium 141 (provided the latter is a fiber laser), all photonic passive elements including reflectors, polarization splitters, controllers and others, also maybe integrated in PIC 12. The resonant cavity of the fiber laser is defined between reflectors 18,20 which are selected from fiber Bragg gratings (FBG) and integrated in silicon ring mirrors, distributed Bragg grating, Sagnac loop mirrors, loop minors and others known in the photonic art.
In accordance with the inventive concept, photonic device 10 is configured with multiple gain media 141, 142 . . . and 14n with gain media 142 . . . 14n each being configured either as a fiber laser or fiber amplifier. For example, amplifier 142 may be an input amplifier with input fiber 14in, whereas amplifier 14n is an output amplifier with an output fiber 14out. A photonic device of the known prior art is configured with multiple fiber lasers/amplifiers energized by respective dedicated pumps in accordance with an end- or side-pumping technique. In contrast, disclosed photonic device 10 is configured with a pump 16 optically coupled to multiple gain media. Preferably, pump 16 is a single pump exciting ail three shown fiber gain media. The minimal number of pumps is application specific, but in accordance with the inventive concept, this number is always less than or equal to the number of active fibers. It may be advantageous to use a combination of fiber-based gain medium and III-V gain material 15, which is bonded to PIC 12 or located outside it, to minimize unavoidable losses in PIC 12 as signals are guided between the input and output of PIC 12.
Characteristically, the illustrated transceiver receives an input signal carrying broadband light which is amplified by an input gain medium or fiber amplifier 24 prior to the injection thereof into PIC 12. Accordingly, illustrated photonic device 10 is configured with three gain media 22, 24 and 26, respectively all energized by single pump 16 injecting pump light into the gain media through three WDM couplers 30.
The mixing between the amplified input signal and a tapped off portion of the output lasing light in a coherent receiver 45 produces the detection of the desired information. The output light is divided in a splitter 38, which is integrated in PIC 12 downstream front partial reflectivity mirror 36, guiding the remaining portion of the lasing light toward a transmitter also integrated in PIC 12. The transmitter includes at least one modulator 42 selected from a phase or amplitude modulator. Preferably, the transmitter is configured with multiple modulators 42 receiving respective parts of the remaining portion of the output lasing light from another splitter 32. The modulated portions are collected in a combiner 34 and amplified in output signal fiber gain medium 26. The amplified modulated output light is further filtered within PIC 12 by spatial filter 28 optionally integrated in PIC 12.
In particular,
Having thus described several examples, it is to be appreciated that various alterations, modifications, and improvements will readily occur to those skilled in the art. Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the scope of the examples discussed herein. Accordingly, the foregoing description and drawings are by way of example only.
The present application claims the benefit of U.S. Provisional Patent Application Ser. No. 62/906,843 filed Sep. 27, 2019, which is fully incorporated herein by reference.
Filing Document | Filing Date | Country | Kind |
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PCT/US2020/052367 | 9/24/2020 | WO |
Number | Date | Country | |
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62906843 | Sep 2019 | US |