The described embodiments relate generally to photonic integrated circuits. More particularly, the present embodiments relate to systems and methods for producing photonic integrated circuits that can be assembled using controlled collapse chip connections.
Photonic integrated circuits include integrated optical circuits that employ photonic components that emit and/or absorb optical signals such as visible or infrared light. Photonic integrated circuits can include optical emitters such as laser emitters and can be manufactured using microfabrication techniques such as micromachining and lithography to create features of the photonic circuit on a substrate. Photonic components such as lasers may be coupled with the circuit at various stages in the manufacturing process and one or more steps may be performed after the addition of the photonic components such as coating to help protect these components from contamination or damage. Once assembled the photonic integrated circuit may be interconnected to other semi-conductor devices.
Embodiments are directed to an optical device including a first substrate defining a surface and a trench forming a depression along a portion of the surface, and a second substrate coupled with the surface and extending from the surface to form a raised portion around the trench. The optical device may also include a laser die positioned within the trench, such that the laser die is surrounded by the second substrate, and an optical material positioned within a region between the laser die and the second substrate. The optical device may further include a third substrate coupled with the second substrate such that the second substrate is positioned between the first substrate and the third substrate. The second substrate may be configured to at least partially isolate the laser die from mechanical stress exerted on the optical device.
In some embodiments the optical device further includes an optical output, a fill material positioned between the first substrate and the second substrate, and a fill dam configured to retain the fill material such that it does not cover the optical output. In some cases, the optical device includes a fill dam coupled with the third substrate and extending toward the first substrate. In some cases, a bottom edge of the fill dam is offset from the first substrate. The fill dam may be configured to retain a fill material within a space between the first substrate and the third substrate. In some embodiments, the optical device includes an interconnect formed from an electrically conductive material that is positioned on the third substrate. In some cases, the third substrate comprises a first surface that faces toward the first substrate and a second surface opposite the first surface, and the interconnect is positioned on the second surface. In further examples, the interconnect is electrically coupled to the laser die.
Embodiments described herein are also directed to a method of manufacturing an optical device, where the method includes forming a trench in a first substrate that defines a depression along a surface of the first substrate and forming a raised feature comprising a second substrate around the trench. The raised feature may extend from the surface. The method may also include coupling a laser die to the first substrate such that the laser die is positioned within the trench and surrounded by the raised feature, and introducing a first optical material to a first region between the raised feature and the laser die. The method may also include coupling a third substrate to the raised feature such that the raised feature is positioned between the first substrate and the third substrate, and introducing a second material into a second region at least partially defined by the first substrate, the raised feature, and the third substrate.
In some embodiments, the method may further include forming a fill dam on the third substrate that extends toward the first substrate and is offset from the first substrate when the second substrate is coupled to the raised feature. In some cases, the method can include forming an interconnect on the second substrate, where the interconnect is positioned on an external surface of the third substrate and is coupled to the raised feature.
Embodiments described herein are also directed to an optical device, including a first substrate that defines a surface including a first electrical contact, and a trench forming a depression along a portion of the surface. The optical device can also include a laser die positioned within the trench and coupled with the first electrical contact, and a first material coupled with the laser die and at least a portion of the first substrate. A second substrate may be coupled to the first substrate and form a cavity around the laser die, and the second substrate can include a second electrical contact that is electrically coupled to the first electrical contact. An electrical interconnect can be coupled to an outer surface of the second substrate and electrically coupled with the second electrical contact.
In some embodiments, the first material forms a layer covering the laser die and at least a portion of the first substrate, the second substrate may be a silicon wafer, and the cavity can be etched from the silicon wafer. The electrical interconnect may include a solder based material that is configured to electrically couple the laser die with an electrical circuit. In some cases, the first material includes a conformal coating that covers the laser die and at least a portion of the first substrate. In some examples, the second substrate is formed from a silicon material, and the second substrate includes a via extending through the silicon material. The via may contain an electrically conductive material comprising the second electrical contact. In some cases, the electrical interconnect is at least partially positioned on an external surface of the second substrate.
Embodiments described herein include a method of forming an optical device, where the method includes forming a trench in a first substrate that defines a depression along a surface of the first substrate. The method may include depositing a first electrical contact onto the first substrate such that a first portion of the first electrical contact is located in the trench, and coupling a laser die to the first substrate such that the laser die is positioned within the trench. A first material may be applied over the laser die and at least a portion of the first substrate. In some cases, the method further includes coupling a second substrate to the first substrate such that a second electrical contact of the second substrate is electrically coupled with the first electrical contact. The second substrate may form a cavity around the laser die. The method may also include forming an electrical interconnect on an outer surface of the second substrate such that the electrical interconnect is electrically coupled to the second electrical contact.
In some embodiments, the second substrate is a silicon material, and the method may further include etching the second substrate to form at least a portion of the cavity in the silicon material. In some cases, the electrical interconnect is formed using a ball drop process to deposit a solder based material on the second substrate.
The disclosure will be readily understood by the following detailed description in conjunction with the accompanying drawings, wherein like reference numerals designate like structural elements, and in which:
The use of cross-hatching or shading in the accompanying figures is generally provided to clarify the boundaries between adjacent elements and also to facilitate legibility of the figures. Accordingly, neither the presence nor the absence of cross-hatching or shading conveys or indicates any preference or requirement for particular materials, material properties, element proportions, element dimensions, commonalities of similarly illustrated elements, or any characteristics attribute, or property for any element illustrated in the accompanying figures.
Additionally, it should be understood that the proportions and dimensions (either relative or absolute) of the various features and elements (and collections and groupings thereof) and the boundaries, separations, and positional relationships presented there between, are provided in the accompanying figures merely to facilitate an understanding of the various embodiments described herein and, accordingly, may not necessarily be presented or illustrated to scale, and are not intended to indicate any preference or requirement for an illustrated embodiment to the exclusion of embodiments described with reference thereto.
Reference will now be made in detail to representative embodiments illustrated in the accompanying drawings. It should be understood that the following descriptions are not intended to limit the embodiments to one preferred embodiment. To the contrary, it is intended to cover alternatives, modifications, and equivalents as can be included within the spirit and scope of the described embodiments as defined by the appended claims.
Embodiments described herein include an optical device such as a photonic integrated circuit (PIC) that includes optical components such as laser dice and structures for protecting the optical components. In a first set of embodiments, an optical device can include a first substrate material that has a depression defining a trench and a second substrate that forms a wall around the trench. An optical output such as a laser die may be positioned within the trench and a third substrate may be positioned on the wall formed by the second substrate. The trench, the wall, and the third substrate may form a cavity around the laser die. In some cases, the cavity may contain an optical fill material in the space defined by the trench, the wall, and the third substrate. Accordingly, the laser die may be isolated from contamination and protected from mechanical stress experienced by the optical device. In some embodiments, interconnects such as controlled collapse chip connections (also referred to as C4 or flip chip connections), copper pillar connections, gold stud bumps, or a combination thereof can be positioned on an outer surface of the third substrate. Thus, the optical device can be interconnected to other integrated circuits using C4 (flip chip), copper pillar, gold stud bump, or other suitable connection methods.
In some embodiments, a fill material may be introduced to a space between the first substrate and the third substrate. For example, the wall formed from the second substrate may offset the first substrate from the third substrate thereby creating a gap between these components. A fill material may be injected into this gap to fill the space between the first and the third substrates. In some cases, the optical device may include a fill dam to help control the location of the fill material within the gap. For example, the fill dam may be formed on the first substrate and extend toward the first substrate. The fill dam may define a structure that blocks the movement of the fill material. In some cases, the fill dam may be located near a facet or optical output of the optical device. Thus, the fill dam may prevent the fill material from covering or otherwise interfering with an optical output of the optical device.
In another set of embodiments, an optical device can include a first substrate material that has a depression defining a trench and a second substrate material that has a recessed feature. A laser die may be positioned within the trench and the first and second substrates can be joined to form a cavity around the laser die. The cavity can be defined by the trench in the first substrate and the recessed feature in the second substrate. The cavity may isolate the laser die from contamination and/or protect the laser die from mechanical stress experienced by the optical device. In some embodiments, interconnects (C4/flip chip) can be positioned on an outer surface of the second substrate. Thus, the optical device can be interconnected to other integrated circuits using C4 or flip chip connection methods.
These and other embodiments are discussed below with reference to
In some embodiments, the optical device 100 can include an optical fill material 114 in a region between the wall 106 and the laser die 108. The optical fill material 114 can be introduced into the region between the wall 106 and the laser die 108 as a liquid/viscous material such that it conforms or at least partially conforms to the surfaces in this region formed by the wall 106 and the laser die 108. The optical fill material 114 can be cured to form a solid or semi-solid structure around the laser die 108. In some examples, the optical fill material 114 may not be cured until one or more additional processing steps have occurred such as adding additional structures/elements to the optical device 100 as described herein. The optical fill material 114 can include an optical underfill material, adhesive, or the like.
In some embodiments, the first substrate 102 can be formed from a silicon, ceramic, plastic, or other suitable material and the trench 104 can be machined, etched, or formed in the material using processes such as patterned lithography techniques. The second substrate, defining the wall 106, can be formed from a variety of materials. For example, the wall 106 may be formed from an organic or ceramic substrate and be plated using copper and/or solder to create a structure that extends or is raised from the surface of the first substrate 102. In cases where the wall 106 forms a closed perimeter around the trench 104, the wall 106 and the trench 104 may form a first portion of a closed cavity around the laser die 108 that isolates the laser die 108. The wall 106 can be configured to be more rigid than the laser die 108, such that the wall 106 can isolate/protect the laser die 108 from mechanical stress or other physical disturbances. In some examples, a top of the wall 106 may extend to a height of the top of the laser die 108 when the laser die is positioned with in the trench 104 and is coupled with the first substrate 102. In some cases, the wall 106 can extend above the laser die 108 such that a top of the wall 106 is above a top of the laser die 108.
In some embodiments, the wall 106 is formed using repassivation techniques with materials that can include polyimide, polybenzocyclobutene, or benzocyclobutene, and a redistribution layer that can be formed by metal pattern plating processes that includes forming C4 solder bumps, metal studs, or metal pillars (collectively, “posts”). In some cases, forming the wall can include forming passivation layers on one or more of these components. In some examples, the bump, stud, and/or pillar heights can be between about 10 and about 150 micrometers, the redistribution layer thickness can be between about 1 micrometer and about 5 micrometers, and the passivation thickness can be between about 1 micrometer and about 20 micrometers.
In some embodiments, the third substrate 202 may form a layer of material that is coupled with the second substrate forming the wall 106. The third substrate 202 may be formed from a silicon, ceramic, organic, or other suitable material and may partially define a space that is defined by an upper surface of the first substrate 102, an outer surface of the wall 106, and a lower surface of the third substrate 202. The third substrate 202 may be at least partially supported by the wall 106. The third substrate 202 may also be coupled with the post 112 (which may be an interconnection bump) using C4, copper pillar, or gold stud bump connection techniques. In some embodiments, a fill material 204 can be introduced into the space between the first substrate 102, the wall 106, and the third substrate 202. The fill material 204 can be introduced as a liquid or viscous material and be injected or flow into the space defined by the first substrate 102, the wall 106, and the third substrate 202. The fill material 204 can be cured such that it hardens to form a more structurally rigid material. In some cases, the optical fill material 114 and the fill material 204 can be cured at the same or similar times to couple the third substrate 202 to the wall 106 and the first substrate 102. The fill material 204 can include an optical underfill material, adhesive, or the like.
The combination of the wall 106 and the fill material 204 can create a structural support between the first substrate 102 and the third substrate 202 such that the laser die 108 is isolated and/or protected from mechanical stress. In some cases, the optical fill material 114, the first substrate 102, the wall 106, and the third substrate 202 can also protect the laser die 108 from contaminants such as dust, debris, moisture, and the like.
In some embodiments, the fill dam 206 can be positioned along the third substrate 202 and extend towards the first substrate 102. The fill dam 206 can help retain the fill material 204 within the space between the first substrate 102 and the third substrate 202 such that the fill material does not cover the optical output 208. For example, the fill dam 206 may extend towards an upper surface of the first substrate 102 such that there is a smaller gap between the first substrate 102 and the fill dam 206 than there is between the first substrate 102 and the third substrate 202. In some examples, the fill dam 206 can form a gap with the first substrate 102 that is between 10 micrometers and 80 micrometers. Accordingly, as fill material 204 is introduced into the optical device 200 (through injection, surface tension, or other technique), the fill dam 206 may prevent the fill material 204 from spreading over the optical output 208. In some cases, the size and positioning of the fill dam 206 may be based on one or more properties of the fill material 204 such as a viscosity, surface tension, and so on. In some cases, the optical output 208 may include a facet.
In some embodiments, the interconnects 302 can be deposited on an upper surface of the third substrate 202. The interconnects 302 can be formed from solder, copper, gold, or other suitable materials, or a combination thereof, and used for bonding the optical device to another device such as another integrated circuit that may be used to drive the laser die 108. In some embodiments, the interconnects 302 can be configured to allow for flip chip (C4) bonding of the optical device to other wafer devices. In some embodiments, one or more interconnects 302 may be electrically coupled with the post 112 (and electrical contact 110) such that the interconnect 302 is electrically coupled to the laser die 108.
In some embodiments, one or more portions of a chip may be divided such that different optical devices 300 that were formed on a single chip can be separated in multiple discrete optical devices 300. After the separation, the optical devices may undergo inspections such as a visual inspection to confirm that they are ready to be bonded to other devices such as other integrated circuits using flip chip (C4) bonding techniques.
At 404, the method 400 may include forming a raised feature using a second substrate, which may be the same or different material as the first substrate. The second substrate can form a wall around the trench that extends from the surface of the first substrate. The raised feature may be formed from an organic or ceramic material or other suitable materials. In some cases, the raised feature may be coated with copper, solder, gold, or a combination thereof, which may be used to couple the raised feature to one or more other components of the optical device. The raised feature may at least partially isolate a photonic component such as a laser die from the surrounding environment, and/or provide protection from mechanical stress applied to the optical device.
At 406, the method 400 can include coupling a laser die to the first substrate such that the laser die is positioned within the trench defined by the first substrate. In some cases, the laser die may be coupled with electrical traces/contacts that are located within the trench. The laser die may be partially surrounded by the trench. In some cases, the laser die may also be partially surrounded by the raised feature that surrounds the trench.
At 408, the method 400 may include introducing a first optical material into a first region between the raised feature and the laser die. The optical fill material may include a liquid/viscous material that can flow around the laser die and trench to conform to features of the laser die and the trench. In some cases, the optical fill material may be cured after settling into the region between the laser die and the trench. In some examples, the optical fill material may be transparent when cured such that light emitted from the laser die can pass through the cured optical fill material. The optical fill material may stabilize the laser die in place, protect it from contamination (dust, debris, moisture and the like), and help isolate the laser die from mechanical stress or other physical disruptions.
At 410, the method 400 may include coupling a third substrate to the raised feature such that the raised feature is positioned between the first substrate and the third substrate. In some cases, coupling the third substrate to the raised feature may be accomplished using physical connections such as a solder, gold, or copper materials, the optical fill material, or other fill materials as described herein. The third substrate may be offset from the first substrate by the raised feature to form a space or region between the first and second substrates.
At 412, the method 400 can include introducing a second fill to a second region at least partially defined by the first substrate, the second substrate, and the raised feature. The second material may be introduced to the second region as a liquid and be injected or flow into the second region via surface tension forces, or other suitable processes. Once in place, the fill material can be cured to transform it to a solid material, which can include heat curing, light curing, or other suitable methods.
In some embodiments, the method 400 may include forming a fill dam on the third substrate such that the fill dam extends toward the first substrate and is offset from the first substrate. A lower edge of the fill dam may form a smaller gap with the first substrate that prevents or resists the fill material from moving past the fill dam. The fill damn may be used to control where fill material can move to within the second region and prevent the fill material from covering an optical output of the optical device such as a facet. In some cases, the method 400 can include forming one or more interconnects on an outer surface of the second substrate. The interconnects may be used to couple the optical device to other devices using flip chip (C4) bonding techniques.
In some embodiments, a first material, which can include an optical underfill, can couple the laser die 508 to the first substrate 502 and/or the second substrate 506. The first material can encapsulate the laser die 508 to protect the laser die such as by reducing stress between the laser die 508 and the first substrate 502. The laser die 508 can also be coupled with a first electrical contact 512, which can be partially located in the trench 504. In some embodiments, the second substrate 506 can include a second electrical contact 514, which can be coupled to the first electrical contact 512.
In some embodiments, the first substrate 502 can be formed from a silicon material (or any other suitable material, which may include a ceramic or plastic) and the trench 504 can be machined, etched, or formed in the silicon material using any suitable processes such as patterned lithography techniques. The second substrate 506 can be formed from a silicon material and the second substrate 506 can be etched, machined, or manufactured using other suitable techniques to create a recess 507 in the second substrate 506 that forms an upper portion of the cavity. Etching of the first substrate 502 and/or the second substrate 506 can be performed along crystalline planes in the silicon material. In some embodiments, the trench 504 can be created in the first substrate, and independently, the recess 507 can be created in the second substrate 506. The first substrate 502 and the second substrate 506 can be joined to form the cavity. The first substrate 502 and the second substrate 506 can be bonded together using solder based connections, or other suitable methods such as adhesive bonding. In some embodiments, the second substrate (e.g., the capping wafer) may be formed from a material other than silicon.
In some embodiments, the laser die 508 can be positioned within the trench 504 and coupled to the first substrate 502 prior to bonding the first substrate 502 with the second substrate 506. In some embodiments, the facet 503 is also formed in the first substrate 502 and also contained within the recess 507 that is formed after joining the first substrate 502 and the second substrate 506. In other cases, the optical facet 503 can be located in a different cavity from the laser die. The first electrical contact 512 can be deposited onto the first substrate 502 and the laser die 508 can be bonded to the first electrical contact 512. The first electrical contact 512 can include electrically conductive traces that are partially located within the trench 504. In some cases, the first electrical contact 512 can also be positioned along a portion of the first substrate 502 that is adjacent the trench 504. In some embodiments, a first material 510, such as an optical underfill, can be deposited around the laser die 508 and a portion of the first substrate 502 to form a layer/coating that covers the laser die 508, which may help protect the laser die 508 from contaminants such as dust, debris, moisture, or the like.
When the first substrate 502 is coupled with the second substrate 506, the cavity/cavities around the facet 503 and/or laser die 508 may protect the facet 503 and laser die 508 from contaminants (dust, debris, moisture, etc.), mechanical stress, or other physical disruptions. For example, the first substrate 502 and the second substrate 506 may form a protective barrier around the facet 503 and/or the laser die 508.
In some embodiments, the second substrate 506 can include a via that comprises at least a portion of the second electrical contact 514. The second electrical contact 514 may couple to the first electrical contact 512 and also include a portion of electrically conductive material that is located on an external surface of the second substrate 506. Thus, the second electrical contact 514 may be used to electrically couple the laser die 508 (or other photonic component) to an external device such as an integrated circuit that is used to drive the laser die 508.
In some embodiments, the interconnects 602 can be deposited on an upper surface of the second substrate 506. The interconnects 602 can be formed from a solder based material and used for bonding the optical device to another device such as another integrated circuit that may be used to drive the laser die 508. In some embodiments, the interconnects 602 can be configured to allow flip chip (C4) bonding, copper pillar bonding, or gold stud bump bonding of the optical device to other wafer devices. In some embodiments, one or more interconnects 602 may be electrically coupled with the second electrical contact 514 (and the first electrical contact 512) such that the interconnect 602 is electrically coupled to the laser die 508. Thus, the interconnects 602 may be used to connect the laser die 508 to other devices (other integrated circuits) that are used to drive the laser die 508.
At 704, the method 700 may include depositing a first electrical contact onto the first substrate such that at least a portion of the electrical contact is located in the trench. In some cases, the first electrical contact may include one or more conductive traces positioned in the trench that are used to couple the laser die to one or more driver circuits. The first electrical contact may extend from the trench and along a portion of the first substrate, for example, to a location where a via from another layer will interface with the first substrate.
At 706, the method 700 can include coupling a laser die to the first substrate such that the laser die is positioned within the trench defined by the first substrate. In some cases, the laser die may be coupled with first electrical contact/traces that are located within the trench. The laser die may be partially surrounded by the trench.
At 708, the method 700 may include applying a first material over the laser die and at least a portion of the first substrate. In some cases, the first material may include a conformal coating that covers the laser die. The first material may be selected to protect the laser die from contamination such as dust, debris, or moisture.
At 710, the method 700 may include coupling a second substrate to the first substrate such that a second electrical contact of the second substrate is electrically coupled with the first electrical contact. In some cases, the second substrate may have a via that includes the second electrical contact and the via may align with the first electrical contact to provide an electrical path from the laser die to an external surface of the second substrate.
At 712, the method 700 may include forming an electrical interconnect on an outer surface of the second substrate such that the electrical interconnect is electrically coupled to the second electrical contact. The interconnects may include a solder based material or other suitable electrically conductive material that can be used to couple the optical device to other devices using flip chip (C4), copper pillar, gold stud bump, or other bonding techniques.
The processor 802 can be implemented as any electronic device capable of processing, receiving, or transmitting data or instructions. For example, the processor 802 can be a microprocessor, a central processing unit (CPU), an application-specific integrated circuit (ASIC), a digital signal processor (DSP), or combinations of such devices. As described herein, the term “processor” is meant to encompass a single processor or processing unit, multiple processors, multiple processing units, or other suitable computing element or elements.
It should be noted that the components of the optical device 800 can be controlled by multiple processors. For example, select components of the optical device 800 (e.g., a sensor 810) may be controlled by a first processor and other components of the optical device 800 (e.g., the optics unit 806) may be controlled by a second processor, where the first and second processors may or may not be in communication with each other.
The I/O mechanism 804 can transmit and/or receive data from a user or another electronic device. An I/O device can include a display, a touch sensing input surface, one or more buttons (e.g., a graphical user interface “home” button), one or more cameras, one or more microphones or speakers, one or more ports, such as a microphone port, and/or a keyboard. Additionally or alternatively, an I/O device or port can transmit electronic signals via a communications network, such as a wireless and/or wired network connection. Examples of wireless and wired network connections include, but are not limited to, cellular, Wi-Fi, Bluetooth, IR, and Ethernet connections.
The memory 808 can store electronic data that can be used by the optical device 800. For example, the memory 808 can store electrical data or content such as, for example, audio and video files, documents and applications, device settings and user preferences, timing signals, control signals, and data structures or databases. The memory 808 can be configured as any type of memory. By way of example only, the memory 808 can be implemented as random access memory, read-only memory, Flash memory, removable memory, other types of storage elements, or combinations of such devices.
The optical device 800 may also include one or more sensors 810 positioned almost anywhere on the optical device 800. The sensor(s) 810 can be configured to sense one or more type of parameters, such as but not limited to, pressure, light, touch, heat, movement, relative motion, biometric data (e.g., biological parameters), and so on. For example, the sensor(s) 810 may include a heat sensor, a position sensor, a light or optical sensor, an accelerometer, a pressure transducer, a gyroscope, a magnetometer, a health monitoring sensor, and so on. Additionally, the one or more sensors 810 can utilize any suitable sensing technology, including, but not limited to, capacitive, ultrasonic, resistive, optical, ultrasound, piezoelectric, and thermal sensing technology.
The power source 812 can be implemented with any device capable of providing energy to the optical device 800. For example, the power source 812 may be one or more batteries or rechargeable batteries. Additionally or alternatively, the power source 812 can be a power connector or power cord that connects the optical device 800 to another power source, such as a wall outlet.
The foregoing description, for purposes of explanation, used specific nomenclature to provide a thorough understanding of the described embodiments. However, it will be apparent to one skilled in the art that the specific details are not required in order to practice the described embodiments. Thus, the foregoing descriptions of the specific embodiments described herein are presented for purposes of illustration and description. They are not targeted to be exhaustive or to limit the embodiments to the precise forms disclosed. It will be apparent to one of ordinary skill in the art that many modifications and variations are possible in view of the above teachings.
This application is a nonprovisional of, and claims the benefit under 35 U.S.C. § 119(e) of, U.S. Provisional Patent Application No. 63/053,841, filed Jul. 20, 2020, the contents of which are incorporated herein by reference as if fully disclosed herein.
Number | Name | Date | Kind |
---|---|---|---|
4897711 | Blonder | Jan 1990 | A |
5037779 | Whalley | Aug 1991 | A |
5109455 | Niswonger | Apr 1992 | A |
5287376 | Paoli | Feb 1994 | A |
5479540 | Boudreau | Dec 1995 | A |
5488678 | Taneya | Jan 1996 | A |
5577142 | Mueller-Fiedler | Nov 1996 | A |
5604160 | Warfield | Feb 1997 | A |
5644667 | Tabuchi | Jul 1997 | A |
5708674 | Berrnink | Jan 1998 | A |
5742631 | Paoli | Apr 1998 | A |
5850411 | Major, Jr. | Dec 1998 | A |
5915165 | Sun | Jun 1999 | A |
5981945 | Spaeth | Nov 1999 | A |
6074104 | Higashikawa | Jun 2000 | A |
6122042 | Wunderman et al. | Sep 2000 | A |
6228675 | Ruby | May 2001 | B1 |
6330378 | Forrest | Dec 2001 | B1 |
6367988 | Auracher | Apr 2002 | B1 |
6393185 | Deacon | May 2002 | B1 |
6461059 | Ando et al. | Oct 2002 | B2 |
6465929 | Levitan et al. | Oct 2002 | B1 |
6519382 | Jurbergs | Feb 2003 | B1 |
6588949 | Zhou | Jul 2003 | B1 |
6594409 | Dutt et al. | Jul 2003 | B2 |
6628686 | Sargent | Sep 2003 | B1 |
6628858 | Zhang | Sep 2003 | B2 |
6632027 | Yoshida | Oct 2003 | B1 |
6657723 | Cohen | Dec 2003 | B2 |
6753197 | Dudoff | Jun 2004 | B2 |
6759687 | Miller | Jul 2004 | B1 |
6767753 | Huang | Jul 2004 | B2 |
6795622 | Forrest | Sep 2004 | B2 |
6801679 | Koh | Oct 2004 | B2 |
6801683 | Kanie et al. | Oct 2004 | B2 |
6803604 | Takahashi et al. | Oct 2004 | B2 |
6823098 | Guidotti et al. | Nov 2004 | B2 |
6873763 | Nikonov | Mar 2005 | B2 |
6892449 | Brophy et al. | May 2005 | B1 |
6894358 | Leib | May 2005 | B2 |
6898222 | Hennig et al. | May 2005 | B2 |
6904191 | Kubby | Jun 2005 | B2 |
6932519 | Steinberg | Aug 2005 | B2 |
6935792 | Saia et al. | Aug 2005 | B2 |
6940182 | Hilton et al. | Sep 2005 | B2 |
6947639 | Singh | Sep 2005 | B2 |
6952504 | Bi | Oct 2005 | B2 |
6955481 | Colgan et al. | Oct 2005 | B2 |
6969204 | Kilian | Nov 2005 | B2 |
6975465 | Chung | Dec 2005 | B1 |
6987906 | Nakama et al. | Jan 2006 | B2 |
7054517 | Mossberg | May 2006 | B2 |
7058245 | Farahi | Jun 2006 | B2 |
7062114 | Webjorn | Jun 2006 | B2 |
7079715 | Kish | Jul 2006 | B2 |
7085445 | Koh | Aug 2006 | B2 |
7189011 | Harker | Mar 2007 | B2 |
7203401 | Mossberg | Apr 2007 | B2 |
7203426 | Wu et al. | Apr 2007 | B2 |
7209611 | Joyner | Apr 2007 | B2 |
7213978 | Kuhmann | May 2007 | B2 |
7223619 | Wang | May 2007 | B2 |
7245379 | Schwabe | Jul 2007 | B2 |
7262622 | Zhao | Aug 2007 | B2 |
7283694 | Welch | Oct 2007 | B2 |
7314451 | Halperin et al. | Jan 2008 | B2 |
7315039 | Kitagawa | Jan 2008 | B2 |
7324195 | Packirisamy et al. | Jan 2008 | B2 |
7335986 | Paek | Feb 2008 | B1 |
7366364 | Singh | Apr 2008 | B2 |
7447393 | Yan | Nov 2008 | B2 |
7460742 | Joyner | Dec 2008 | B2 |
7477384 | Schwabe | Jan 2009 | B2 |
7483599 | Dominic et al. | Jan 2009 | B2 |
7519246 | Welch et al. | Apr 2009 | B2 |
7526007 | Chua et al. | Apr 2009 | B2 |
7558301 | Lin et al. | Jul 2009 | B2 |
7577327 | Blauvelt et al. | Aug 2009 | B2 |
7612881 | Ban et al. | Nov 2009 | B2 |
7680364 | Nilsson | Mar 2010 | B2 |
7720328 | Yan | May 2010 | B2 |
7750289 | Feldman | Jul 2010 | B2 |
7885302 | Eberhard | Feb 2011 | B2 |
7885492 | Welch | Feb 2011 | B2 |
7974504 | Nagarajan | Jul 2011 | B2 |
8300994 | Welch et al. | Oct 2012 | B2 |
8318057 | Harden | Nov 2012 | B2 |
8417071 | Hopkins et al. | Apr 2013 | B2 |
8548287 | Thacker et al. | Oct 2013 | B2 |
8559775 | Babie et al. | Oct 2013 | B2 |
8564784 | Wang et al. | Oct 2013 | B2 |
8659813 | Davis et al. | Feb 2014 | B2 |
8724100 | Asghari et al. | May 2014 | B1 |
8774569 | Dougherty et al. | Jul 2014 | B2 |
8920332 | Hong et al. | Dec 2014 | B2 |
8966748 | Leib | Mar 2015 | B2 |
8983250 | Black et al. | Mar 2015 | B2 |
9008139 | Monadgemi | Apr 2015 | B2 |
9020004 | Jeong | Apr 2015 | B2 |
9031412 | Nagarajan | May 2015 | B2 |
9064988 | Hsiao et al. | Jun 2015 | B2 |
9091594 | Furstenberg et al. | Jul 2015 | B2 |
9110259 | Black | Aug 2015 | B1 |
9135397 | Denyer et al. | Sep 2015 | B2 |
9176282 | Pottier | Nov 2015 | B2 |
9217669 | Wu et al. | Dec 2015 | B2 |
9310248 | Karlsen et al. | Apr 2016 | B2 |
9348154 | Hayakawa | May 2016 | B2 |
9370689 | Guillama et al. | Jun 2016 | B2 |
9395494 | Krishnamurthi et al. | Jul 2016 | B2 |
9396914 | Steiner | Jul 2016 | B2 |
9405066 | Mahgerefteh | Aug 2016 | B2 |
9543736 | Barwicz et al. | Jan 2017 | B1 |
9620931 | Tanaka | Apr 2017 | B2 |
9702975 | Brinkmeyer | Jul 2017 | B2 |
9715064 | Gambino et al. | Jul 2017 | B1 |
9766370 | Aloe et al. | Sep 2017 | B2 |
9804027 | Fish et al. | Oct 2017 | B2 |
9829631 | Lambert | Nov 2017 | B2 |
9874701 | Baets et al. | Jan 2018 | B2 |
9880352 | Florjanczyk | Jan 2018 | B2 |
9943237 | Baker et al. | Apr 2018 | B2 |
9948063 | Caneau et al. | Apr 2018 | B2 |
10009668 | Liboiron-Ladouceur | Jun 2018 | B2 |
10046229 | Tran et al. | Aug 2018 | B2 |
10067426 | Pandey | Sep 2018 | B2 |
10132996 | Lambert | Nov 2018 | B2 |
10203762 | Bradski et al. | Feb 2019 | B2 |
10238351 | Halperin et al. | Mar 2019 | B2 |
10268043 | Zhou et al. | Apr 2019 | B2 |
10283939 | Dawson et al. | May 2019 | B2 |
10285898 | Douglas et al. | May 2019 | B2 |
10295740 | Bourstein | May 2019 | B2 |
10310196 | Hutchison | Jun 2019 | B2 |
10374699 | Ji et al. | Aug 2019 | B2 |
10429582 | Bian et al. | Oct 2019 | B1 |
10429597 | ten Have et al. | Oct 2019 | B2 |
10436028 | Dai et al. | Oct 2019 | B2 |
10495813 | Mahgerefteh et al. | Dec 2019 | B2 |
10511146 | Lebby et al. | Dec 2019 | B2 |
10529003 | Mazed | Jan 2020 | B2 |
10634843 | Bayn et al. | Apr 2020 | B2 |
10656429 | Zhou et al. | May 2020 | B2 |
10687718 | Allec et al. | Jun 2020 | B2 |
10823912 | Pelc et al. | Nov 2020 | B1 |
10852492 | Vermeulen et al. | Dec 2020 | B1 |
10985524 | Bayn et al. | Apr 2021 | B1 |
11064592 | Bismuto et al. | Jul 2021 | B1 |
11086088 | Huebner et al. | Aug 2021 | B2 |
11320718 | Mahmoud et al. | May 2022 | B1 |
11500139 | Zhou et al. | Nov 2022 | B2 |
11525967 | Bismuto et al. | Dec 2022 | B1 |
11881678 | Bishop et al. | Jan 2024 | B1 |
20020031711 | Steinberg | Mar 2002 | A1 |
20020110335 | Wagner | Aug 2002 | A1 |
20020126940 | Kathman | Sep 2002 | A1 |
20030223709 | Lake | Dec 2003 | A1 |
20040007661 | Matsuo | Jan 2004 | A1 |
20040037519 | Kilian | Feb 2004 | A1 |
20040043533 | Chua | Mar 2004 | A1 |
20040076382 | Saia | Apr 2004 | A1 |
20040104460 | Stark | Jun 2004 | A1 |
20040126117 | Lo et al. | Jul 2004 | A1 |
20040190836 | Kilian | Sep 2004 | A1 |
20040208428 | Kikuchi et al. | Oct 2004 | A1 |
20050053112 | Shams-Zadeh-Amiri | Mar 2005 | A1 |
20050063431 | Gallup et al. | Mar 2005 | A1 |
20050064644 | Leib | Mar 2005 | A1 |
20050098790 | Gallup | May 2005 | A1 |
20050180698 | Hauffe | Aug 2005 | A1 |
20050205951 | Eskridge | Sep 2005 | A1 |
20060002443 | Farber et al. | Jan 2006 | A1 |
20060013585 | Hnatiw et al. | Jan 2006 | A1 |
20060045144 | Karlsen et al. | Mar 2006 | A1 |
20060045158 | Li | Mar 2006 | A1 |
20060182445 | Lee et al. | Aug 2006 | A1 |
20080044128 | Kish et al. | Feb 2008 | A1 |
20080310470 | Ooi et al. | Dec 2008 | A1 |
20090032690 | Modavis | Feb 2009 | A1 |
20090038843 | Yoneda | Feb 2009 | A1 |
20090103580 | Farmer et al. | Apr 2009 | A1 |
20100175247 | Yoneda | Jul 2010 | A1 |
20110069731 | Gokay | Mar 2011 | A1 |
20110163444 | Hayashi | Jul 2011 | A1 |
20110193114 | Lerman | Aug 2011 | A1 |
20120057816 | Krasulick | Mar 2012 | A1 |
20120091594 | Landesberger | Apr 2012 | A1 |
20130189804 | Marchena | Jul 2013 | A1 |
20130210214 | Dallesasse | Aug 2013 | A1 |
20130229701 | Feng | Sep 2013 | A1 |
20130270427 | Hsiao | Oct 2013 | A1 |
20140029943 | Mathai et al. | Jan 2014 | A1 |
20140160751 | Hogan | Jun 2014 | A1 |
20140264844 | Ying | Sep 2014 | A1 |
20140269804 | Lai | Sep 2014 | A1 |
20150099318 | Krasulick | Apr 2015 | A1 |
20160224750 | Kethman et al. | Aug 2016 | A1 |
20160274319 | Krasulick | Sep 2016 | A1 |
20170005453 | Yim | Jan 2017 | A1 |
20170164878 | Connor | Jun 2017 | A1 |
20170328772 | Wijbrans et al. | Nov 2017 | A1 |
20180011248 | Bourstein | Jan 2018 | A1 |
20190326731 | Mathai | Oct 2019 | A1 |
20190339468 | Evans | Nov 2019 | A1 |
20190342009 | Evans | Nov 2019 | A1 |
20190342010 | Evans et al. | Nov 2019 | A1 |
20190377135 | Mansouri et al. | Dec 2019 | A1 |
20200073065 | Huebner | Mar 2020 | A1 |
20200152615 | Krasulick et al. | May 2020 | A1 |
20200244045 | Bismuto et al. | Jul 2020 | A1 |
20200253547 | Harris et al. | Aug 2020 | A1 |
20200309593 | Bismuto et al. | Oct 2020 | A1 |
20200310112 | Hirose | Oct 2020 | A1 |
20200343695 | Mathai | Oct 2020 | A1 |
20200393615 | Bayn et al. | Dec 2020 | A1 |
20210033805 | Bishop et al. | Feb 2021 | A1 |
20220128666 | Schrans et al. | Apr 2022 | A1 |
20220221649 | Sakamoto et al. | Jul 2022 | A1 |
20230011177 | Arbore | Jan 2023 | A1 |
20230012376 | Arbore et al. | Jan 2023 | A1 |
20230085761 | Witmer et al. | Mar 2023 | A1 |
20230107907 | Bismuto et al. | Apr 2023 | A1 |
20230324286 | Pelc et al. | Oct 2023 | A1 |
Number | Date | Country |
---|---|---|
206546453 | Oct 2017 | CN |
102004025775 | Apr 2005 | DE |
102004063569 | Sep 2005 | DE |
60219161 | Dec 2007 | DE |
1403985 | Mar 2004 | EP |
1432045 | Jun 2004 | EP |
H07297324 | Nov 1995 | JP |
2008262118 | Oct 2008 | JP |
WO-0041281 | Jul 2000 | WO |
WO 01014929 | Mar 2001 | WO |
WO 04031824 | Apr 2004 | WO |
WO 05091036 | Sep 2005 | WO |
WO-2006030611 | Mar 2006 | WO |
WO-2007100037 | Sep 2007 | WO |
WO 11090274 | Jul 2011 | WO |
WO 14141451 | Sep 2014 | WO |
WO 17040431 | Mar 2017 | WO |
WO 17184420 | Oct 2017 | WO |
WO 17184423 | Oct 2017 | WO |
WO-2017184524 | Oct 2017 | WO |
WO 19152990 | Aug 2019 | WO |
WO 20086744 | Apr 2020 | WO |
WO 20106974 | May 2020 | WO |
WO-2020180612 | Sep 2020 | WO |
WO 20240796 | Dec 2020 | WO |
WO 21116766 | Jun 2021 | WO |
WO 22029486 | Feb 2022 | WO |
Entry |
---|
International Search Report and Written Opinion dated Nov. 10, 2021, PCT/US2021/042226, 11 pages. |
Bogaerts, et al., “Off-Chip Coupling,” Handbook of Silicon Photonics, CRC Press, Apr. 2013, 43 pages. |
Chang et al., “A Comb-Drive Actuator Driven by Capacitively-Coupled-Power,” Sensors, 2012, pp. 10881-10889. |
Dhoore et al., “Novel adiabatic tapered couplers for active III-V/SOI devices fabricated through transfer printing,” Ghent University, Belgium, Optical Society of America, 2016, 16 pages. |
He et al., “Integrated Polarization Compensator for WDM Waveguide Demultiplexers,” IEEE Photonics Technology Letters vol. 11, No. 2, Feb. 1999, pp. 224-226. |
Holmström et al., “MEMS Laser Scanners: a Review,” Journal of Microelectromechanical Systems, vol. 23, No. 2, 2014, pp. 259-275. |
Komljenovic et al., “Photonic Integrated Circuits Using Heterogeneous Integration on Silicon,” Proceedings of the IEEE 2018, pp. 1-12. |
Milanovic et al., “Compact MEMS Mirror Based Q-Switch Module for Pulse-on-demand Laser Range Finders,” presented at SPIE Conference on MOEMS and Miniaturized Systems XIV, San Francisco, California, 2015, 7 pages. |
Schiappelli et al., “Efficient fiber-to-waveguide coupling by a lense on the end of the optical fiber fabricated by focused ion beam milling,” Microelectronic Engineering, 73-74, 2004, pp. 397-404. |
Tsai et al., “A Laminate Cantilever Waveguide Optical Switch,” 2012, downloaded Sep. 19, 2021 from IEEE Xplore, pp. 203-207. |
Gonzalez-Sanchez et al., “Capacitive Sensing for Non-Invasive Breathing and Heart Monitoring in Non-Restrained, Non-Sedated Laboratory Mice,” Sensors 2016, vol. 16, No. 1052, pp. 1-16. |
Kybartas et al., “Capacitive Sensor for Respiratory Monitoring,” Conference “Biomedical Engineering,” Nov. 2015, 6 pages. |
Lapedus, “Electroplating IC Packages—Tooling challenges increase as advanced packaging ramps up,” Semiconductor Engineering, https://semiengineering.com/electroplating-ic-packages, Apr. 10, 2017, 22 pages. |
Materials and Processes for Electronic Applications, Series Editor: James J. Licari, AvanTeco, Whittier, California, Elsevier Inc., 2009, 20 pages. |
Worhoff et al., “Flip-chip assembly for photonic circuits,” MESA+ Research Institute, University of Twente, Integrated Optical MicroSystems Group, the Netherlands, 12 pages. |
U.S. Appl. No. 17/859,813, filed Jul. 7, 2022, Arbore. |
U.S. Appl. No. 17/859,912, filed Jul. 7, 2022, Arbore et al. |
Number | Date | Country | |
---|---|---|---|
20220021179 A1 | Jan 2022 | US |
Number | Date | Country | |
---|---|---|---|
63053841 | Jul 2020 | US |