Patent Grant
7923627
1. Field of the Invention
The present invention relates to a photovoltaic element, a photovoltaic module comprising the photovoltaic element, and a method of fabricating the photovoltaic element, and more particularly, it relates to a photovoltaic element comprising a transparent conductive film including an indium oxide layer, a photovoltaic module comprising the photovoltaic element, and a method of fabricating the photovoltaic element.
2. Description of the Background Art
A photovoltaic element comprising a transparent conductive film including an indium oxide layer is known in general as disclosed in Japanese Patent Laying-Open No. 2004-281586, for example.
In the aforementioned Japanese Patent Laying-Open No. 2004-281586, there is disclosed the photovoltaic element (photovoltaic element) comprising a photoelectric conversion layer and the transparent conductive film formed on a surface of the photoelectric conversion layer and consisting of an indium tin oxide (ITO) layer having two X-ray diffraction peaks. In the photovoltaic element, the two X-ray diffraction peaks of the indium tin oxide layer include a peak on a low angle side and a peak on a high angle side having an intensity level higher than the peak on the low angle side.
In the photovoltaic element disclosed in the aforementioned Japanese Patent Laying-Open No. 2004-281586, the transparent conductive film is so formed that the indium tin oxide layer has the two X-ray diffraction peaks of the peak on the low angle side and the peak on the high angle side having the intensity level higher than the peak on the low angle side, whereby the resistance of the transparent conductive film can be reduced as compared with a case where the indium oxide layer has only one X-ray diffraction peak. In addition, the transparent conductive film is formed in the aforementioned manner, light absorption loss of the transparent conductive film can be reduced as compared with the case where the indium oxide layer has only one X-ray diffraction peak. In the photovoltaic element (photovoltaic element), it is known that the transparent conductive film having low resistance and low light absorption loss is effective in increasing the cell output (Pmax) of the photovoltaic element. In the photovoltaic element disclosed in the aforementioned Japanese Patent Laying-Open No. 2004-281586, the resistance and the light absorption loss of the transparent conductive film can be reduced as compared with the case where the indium oxide layer has only one X-ray diffraction peak, whereby the cell output (Pmax) of the photovoltaic element can be increased.
In the photovoltaic element disclosed in the aforementioned Japanese Patent Laying-Open No. 2004-281586, however, sufficient studies on weather resistance have not been made. Thus, it is disadvantageously difficult to improve the weather resistance.
The present invention has been proposed in order to solve the aforementioned problem, and an object of the present invention is to provide a photovoltaic element capable of improving weather resistance, a photovoltaic module comprising the photovoltaic element, and a method of fabricating the photovoltaic element.
In order to attain the aforementioned object, a photovoltaic element according to a first aspect of the present invention comprises a photoelectric conversion layer, a first transparent conductive film formed on a surface of the photoelectric conversion layer closer to an incidence side and including a first indium oxide layer having (222) orientation and two X-ray diffraction peaks, and a second transparent conductive film formed on a surface of the photoelectric conversion layer opposite to the incidence side and including a second indium oxide layer having (222) orientation and one X-ray diffraction peak.
In the photovoltaic element according to the first aspect, as hereinabove described, the first transparent conductive film including the first indium oxide layer having (222) orientation and the two X-ray diffraction peaks is provided on the surface of the photoelectric conversion layer closer to the incidence side, and the second transparent conductive film including the second indium oxide layer having (222) orientation and the one X-ray diffraction peak is provided on the surface of the photoelectric conversion layer opposite to the incidence side, whereby warping can be inhibited from occurring in the photovoltaic element even in a case where the temperature of the photovoltaic element is increased by light incidence, thereby allowing improvement of weather resistance. Consequently, the photovoltaic element capable of suppressing reduction in cell output (Pmax) after a lapse of a long time by the improvement of weather resistance can be obtained. The aforementioned effect has been confirmed by experiments described later.
In the aforementioned photovoltaic element according to the first aspect, the X-ray diffraction peak of the second indium oxide layer preferably has an angle 2θ (θ: X-ray diffraction angle) in the vicinity of 30.6 degrees. According to this structure, weather resistance can be improved as compared with a case where the X-ray diffraction peak of the second indium oxide layer has two diffraction peaks. This effect has also been confirmed by the experiments described later.
In the aforementioned photovoltaic element according to the first aspect, the two X-ray diffraction peaks of the first indium oxide layer are preferably constituted by a first peak on a low angle side having an angle 2θ (θ: X-ray diffraction angle) in the vicinity of 30.1 degrees, and a second peak on a high angle side with a peak intensity level lower than the first peak, having an angle 2θ (θ: X-ray diffraction angle) in the vicinity of 30.6 degrees. In a case where the angles 2θ (θ: X-ray diffraction angle) of the first peak and the second peak are in the vicinity of 30.1 degrees and 30.6 degrees, respectively, and the first peak on the low angle side has the peak intensity level higher than the second peak, weather resistance can be improved. This effect has also been confirmed by the experiments described later.
In this case, the intensity ratio between the first peak and the second peak of the first indium oxide layer is preferably at least 1. According to this structure, weather resistance can be improved as compared with a case where the intensity ratio between the first peak and the second peak of the indium oxide layer is less than 1. This effect has also been confirmed by the experiments described later.
In the aforementioned structure in which the intensity ratio between the first peak and the second peak of the first indium oxide layer is at least 1, the intensity ratio between the first peak and the second peak of the first indium oxide layer is preferably at most 2. According to this structure, a cell output (Pmax) can be increased. This effect has also been confirmed by the experiments described later.
In the aforementioned photovoltaic element according to the first aspect, the first indium oxide layer and the second indium oxide layer preferably include W. According to this structure, in the photovoltaic element comprising the first transparent conductive film and the second transparent conductive film consisting of the indium oxide layer including W (IWO layer), weather resistance can be improved.
The aforementioned photovoltaic element according to the first aspect may further comprise a first semiconductor layer formed thereon with the first transparent conductive film and consisting of at least either an amorphous semiconductor or a microcrystalline semiconductor, a first collector formed on a surface of the first transparent conductive film, a second semiconductor layer formed thereon with the second transparent conductive film and consisting of at least either an amorphous semiconductor or a microcrystalline semiconductor, and a second collector formed on a surface of the second transparent conductive film.
In the aforementioned photovoltaic element according to the first aspect, the first indium oxide layer and the second indium oxide layer preferably include Sn. According to this structure, in the photovoltaic element comprising the first transparent conductive film and the second transparent conductive film consisting of the indium oxide layer including Sn (ITO layer), weather resistance can be improved.
A photovoltaic module according to a second aspect of the present invention comprises a photoelectric conversion layer, a plurality of photovoltaic elements, each of which including a first transparent conductive film formed on a surface of the photoelectric conversion layer closer to an incidence side and including a first indium oxide layer having (222) orientation and two X-ray diffraction peaks, and a second transparent conductive film formed on a surface of the photoelectric conversion layer opposite to the incidence side and including a second indium oxide layer having (222) orientation and one X-ray diffraction peak, a transparent surface protector arranged on a surface of the first transparent conductive film closer to the incidence side, and a resin film arranged on a surface of the second transparent conductive film opposite to the incidence side.
In the photovoltaic module according to the second aspect, as hereinabove described, the first transparent conductive film including the first indium oxide layer having (222) orientation and the two X-ray diffraction peaks is provided on the surface of the photoelectric conversion layer closer to the incidence side, and the second transparent conductive film including the second indium oxide layer having (222) orientation and the one X-ray diffraction peak is provided on the surface of the photoelectric conversion layer opposite to the incidence side, whereby warping can be inhibited from occurring in the photovoltaic element even in a case where the temperature of the photovoltaic element is increased by light incidence, thereby allowing improvement of weather resistance. Consequently, the photovoltaic module capable of suppressing reduction in cell output (Pmax) after a lapse of a long time by the improvement of weather resistance can be obtained.
In the aforementioned photovoltaic module according to the second aspect, the X-ray diffraction peak of the second indium oxide layer preferably has an angle 2θ (θ: X-ray diffraction angle) in the vicinity of 30.6 degrees. According to this structure, weather resistance can be improved as compared with a case where the X-ray diffraction peak of the second indium oxide layer has two diffraction peaks.
In the aforementioned photovoltaic module according to the second aspect, the two X-ray diffraction peaks of the first indium oxide layer are preferably constituted by a first peak on a low angle side having an angle 2θ (θ: X-ray diffraction angle) in the vicinity of 30.1 degrees and a second peak on a high angle side with a peak intensity level lower than the first peak, having an angle 2θ (θ: X-ray diffraction angle) in the vicinity of 30.6 degrees. In a case where the angles 2θ (θ: X-ray diffraction angle) of the first peak and the second peak are in the vicinity of 30.1 degrees and 30.6 degrees, respectively, and the first peak on the low angle side has the peak intensity level higher than the second peak, weather resistance can be improved.
In this case, the intensity ratio between the first peak and the second peak of the first indium oxide layer is at least 1. According to this structure, weather resistance can be improved as compared with a case where the intensity ratio between the first peak and the second peak of the indium oxide layer is less than 1.
In the aforementioned structure in which the intensity ratio between the first peak and the second peak of the first indium oxide layer is at least 1, the intensity ratio between the first peak and the second peak of the first indium oxide layer is preferably at most 2. According to this structure, a cell output (Pmax) can be increased.
In the aforementioned photovoltaic module according to the second aspect, the first indium oxide layer and the second indium oxide layer preferably include W. According to this structure, in the photovoltaic module comprising the photovoltaic element including the first transparent conductive film and the second transparent conductive film consisting of the indium oxide layer including W (IWO layer), weather resistance can be improved.
The aforementioned photovoltaic module according to the second aspect may further comprise a first semiconductor layer formed thereon with the first transparent conductive film and consisting of at least either an amorphous semiconductor or a microcrystalline semiconductor, a first collector formed on a surface of the first transparent conductive film, a second semiconductor layer formed thereon with the second transparent conductive film and consisting of at least either an amorphous semiconductor or a microcrystalline semiconductor, and a second collector formed on a surface of the second transparent conductive film.
In the aforementioned photovoltaic module according to the second aspect, the first indium oxide layer and the second indium oxide layer preferably include Sn. According to this structure, in the photovoltaic element comprising the first transparent conductive film and the second transparent conductive film consisting of the indium oxide layer including Sn (ITO layer), weather resistance can be improved.
A method of fabricating a photovoltaic element according to a third aspect of the present invention comprises steps of forming a photoelectric conversion layer, forming a first transparent conductive film including a first indium oxide layer having (222) orientation and two X-ray diffraction peaks on a surface of the photoelectric conversion layer closer to an incidence side by ion plating, and forming a second transparent conductive film including a second indium oxide layer having (222) orientation and one X-ray diffraction peak on a surface of the photoelectric conversion layer opposite to the incidence side by ion plating.
In the method of fabricating a photovoltaic element according to the third aspect, as hereinabove described, the first transparent conductive film including the first indium oxide layer having (222) orientation and two X-ray diffraction peaks and the second transparent conductive film including the second indium oxide layer having (222) orientation and one X-ray diffraction peak are formed, whereby warping can be inhibited from occurring in the photovoltaic element even in a case where the temperature of the photovoltaic element is increased by light incidence, thereby allowing improvement of weather resistance. Consequently, the photovoltaic element capable of suppressing reduction in cell output (Pmax) after a lapse of a long time by the improvement of weather resistance can be fabricated.
In the aforementioned method of fabricating a photovoltaic element according to the third aspect, the step of forming the first transparent conductive film preferably includes a step of forming the first transparent conductive film by ion plating under a condition of an ion energy of at least 10 eV and not more than 20 eV, and the step of forming the second transparent conductive film preferably includes a step of forming the second transparent conductive film by ion plating under a condition of an ion energy of at least 10 eV and not more than 20 eV. According to this structure, damage to the photoelectric conversion layer due to ions can be reduced. Thus, it is possible to suppress reduction in weather resistance caused by damage to the photoelectric conversion layer due to ions.
In the aforementioned method of fabricating a photovoltaic element according to the third aspect, the step of forming the first transparent conductive film preferably includes a step of forming the first transparent conductive film by ion plating under a condition where the content of WO3 powder in a target consisting of indium oxide (In2O3) is at least 1 percent by weight and not more than 3 percent by weight and a pressure of a gas mixture of Ar and O2 is at least 0.7 Pa and not more than 1.0 Pa. According to this structure, the X-ray diffraction peaks of the first indium oxide layer can be easily constituted by the first peak on the low angle side and the second peak on the high angle side having the peak intensity level lower than the first peak, and the intensity ratio between the first peak and the second peak of the first indium oxide layer can be at least 1 and not more than 2.
In the aforementioned method of fabricating a photovoltaic element according to the third aspect, the step of forming the first transparent conductive film preferably includes a step of forming the first transparent conductive film prepared from a target consisting of indium oxide (In2O3) containing SnO2 powder by ion plating under a condition where a pressure of a gas mixture of Ar and O2 is at least 0.4 Pa and not more than 1.0 Pa. According to this structure, the X-ray diffraction peaks of the first indium oxide layer can be easily constituted by the first peak on the low angle side and the second peak on the high angle side having the peak intensity level lower than the first peak, and the intensity ratio between the first peak and the second peak of the first indium oxide layer can be at least 1 and not more than 2.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
An embodiment of the present invention will be hereinafter described with reference to the drawings.
A structure of photovoltaic elements (not shown) according to the embodiment of the present invention will be now described. In each photovoltaic element 1 according to the embodiment of the present invention, a substantially intrinsic i-type amorphous silicon layer having a thickness of about 5 nm is formed on an upper surface of an n-type (100) single-crystalline silicon substrate (photoelectric conversion layer) (hereinafter referred to as “n-type single-crystalline silicon substrate”) 1a having resistivity of about 1 Ω·cm and a thickness of about 300 μm. A p-type amorphous silicon layer having a thickness of about 5 nm is formed on the i-type amorphous silicon layer. The p-type amorphous silicon layer is an example of the “first semiconductor layer” in the present invention. A first transparent conductive film 1b consisting of a first indium oxide film having a thickness of about 100 nm is formed on the p-type amorphous silicon layer.
According to this embodiment, the first transparent conductive film 1b is formed by the first indium oxide film having (222) orientation and two X-ray diffraction peaks.
According to this embodiment, the two X-ray diffraction peaks of the first transparent conductive film 1b are constituted by a first peak (P1) on a low angle side having an angle 2θ (θ: X-ray diffraction angle) of 30.1±0.1 degrees and a second peak (P2) on a high angle side having a peak intensity level lower than the peak intensity level of the first peak (P1) and having an angle 2θ (θ: X-ray diffraction angle) of 30.6±0.1 degrees. The intensity ratio (P1/P2) between the first peak (P1) and the second peak (P2) is at least 1 and not more than 2.
A first collector 1c of silver (Ag) having a thickness of about 10 μm to about 30 μm is formed on a prescribed region of the upper surface of the first transparent conductive film 1b. This first collector is constituted by a plurality of finger electrode parts so formed as to extend in parallel with each other at a prescribed interval and a bus bar electrode part aggregating currents flowing in the finger electrode parts. The first collector 1c is an example of the “first Collector” in the present invention.
The substantially intrinsic i-type amorphous silicon layer having a thickness of about 5 nm is formed on a back surface of the n-type single-crystalline silicon substrate 1a. The n-type amorphous silicon layer having a thickness of about 5 nm is formed on a back surface of the i-type amorphous silicon layer. The n-type amorphous silicon layer is an example of the “second semiconductor layer” in the present invention. A second transparent conductive film 1d consisting of a second indium oxide film having a thickness of about 100 nm is formed on an back surface of the n-type amorphous silicon layer.
According to this embodiment, the second transparent conductive film 1d is formed by the second indium oxide film having (222) orientation and one X-ray diffraction peak having an angle 2θ (θ: X-ray diffraction angle) of 30.6±0.1 degrees.
A second collector 1e of silver (Ag) having a thickness of about 10 μm to about 30 μm is formed on a prescribed region of a back surface of the second transparent conductive film 1d. This second collector 1e is constituted by a plurality of finger electrode parts so formed as to extend in parallel with each other at a prescribed interval and a bus bar electrode part aggregating currents flowing in the finger electrode parts. The second collector 1e is an example of the “second collector” in the present invention.
A process of fabricating the photovoltaic element 1 according to the embodiment of the present invention will be now described. First, the n-type single-crystalline silicon substrate 1a having resistivity of about 1 Ω·cm and a thickness of about 300 μm is cleaned, thereby removing impurities to form a texture structure (irregular configuration) by etching or the like. The i-type amorphous silicon layer and the p-type amorphous silicon layer are successively deposited on the n-type single-crystalline silicon substrate 1a with thicknesses of about 5 nm respectively by RF plasma CVD under a condition of a frequency of about 13.56 MHz, a formation temperature of about 100° C. to about 300° C., a reaction pressure of about 5 Pa to about 100 Pa, and RF power of about 1 mW/cm2 to about 500 mW/cm2, thereby forming a p-i-n junction. A group III element such as B, Al, Ga or In can be employed as a p-type dopant for forming the p-type amorphous silicon layer. The p-type amorphous silicon layer can be formed by mixing compound gas containing at least one of the aforementioned p-type dopants into material gas such as SiH4 (silane) gas at a time of forming the p-type amorphous silicon layer.
The i-type amorphous silicon layer and the n-type amorphous silicon layer are successively deposited on the back surface of the n-type single-crystalline silicon substrate 1a with thicknesses of about 5 nm respectively. Thus, a BSF (back surface field) structure is formed. The i-type amorphous silicon layer and the n-type amorphous silicon layer are formed through a process similar to the aforementioned one for the i-type amorphous silicon layer and the p-type amorphous silicon layer closer to the incidence side, respectively. At this time, a group V element such as P, N, As or Sb can be employed as a dopant for forming the n-type amorphous silicon layer.
According to this embodiment, the first transparent conductive film 1b consisting of the first indium oxide film having a thickness of about 100 nm is formed on the p-type amorphous silicon layer by ion plating. More specifically, a target consisting of a sintered body of In2O3 powder containing about 1 percent by weight to about 5 percent by weight of WO3 powder or SnO2 powder for doping is set on a position facing a substrate in a chamber (not shown). In this case, the W content or the Sn content in the first indium oxide film can be varied by changing a quantity of the WO3 powder or the SnO2 powder. According to this embodiment, the first transparent conductive film 1b consisting of the first indium oxide film is formed on the p-type amorphous silicon layer by ion plating, whereby an ion energy in forming the first transparent conductive film 1b on the p-type amorphous silicon layer can be reduced to about 10 eV to about 20 eV. Accordingly, the ion energy can be considerably reduced, as compared with a case where the ion energy is 100 eV or more as in a case of forming the first transparent conductive film 1b by usual sputtering, for example. Thus, it is possible to reduce damages to the p-type amorphous silicon layer, the i-type amorphous silicon layer and the n-type single-crystalline silicon substrate 1a.
The chamber (not shown) is evacuated in a state of oppositely arranging the n-type single-crystalline silicon substrate 1a formed with the p-type amorphous silicon layer in parallel with the target. Thereafter a gas mixture of Ar and O2 is fed for holding the pressure at about 0.4 Pa to about 1.0 Pa, thereby starting discharge. A partial pressure of Ar gas is maintained at about 0.36 Pa. In this case, a film forming rate is about 10 nm/min to about 80 nm/min in a state where the n-type single-crystalline silicon substrate 1a is stood still with respect to the target. The first transparent conductive film 1b consisting of the first indium oxide film is formed with the thickness of about 100 nm in the aforementioned manner, and the discharge is thereafter stopped.
According to this embodiment, the second transparent conductive film 1d consisting of the second indium oxide film having a thickness of about 100 nm is formed on the back surface of the n-type amorphous silicon layer by ion plating. The second transparent conductive film 1d of the second indium oxide film is formed through a process similar to the aforementioned one for the first transparent conductive film 1b of the first indium oxide film, except that the chamber is evacuated in a state where oppositely arranging the n-type amorphous silicon layer formed on the n-type single-crystalline silicon substrate in parallel with the target and thereafter a gas mixture of Ar and O2 is fed for holding the pressure at about 1.3 Pa.
Then, Ag paste prepared by kneading impalpable silver (Ag) powder into epoxy resin is applied to the prescribed region of the upper surface of the first transparent conductive film 1b by screen printing to have a thickness of about 10 μm to about 30 μm and a width of about 100 μm to about 500 μm and thereafter fired at about 200° C. for about 80 minutes to be hardened, thereby forming the first collector consisting of the plurality of finger electrode parts so formed as to extend in parallel with each other at the prescribed interval and the bus bar electrode part aggregating the currents flowing in the finger electrode parts. After that, the second collector is formed on a lower surface of the second transparent conductive film through a process similar to the aforementioned one for the first collector.
With reference to
Then, an EVA sheet for forming the filler 3, the plurality of photovoltaic elements 1 connected by the tab electrodes 2 respectively, and the EVA sheet for forming the filler 3 are arranged between the surface protector 4 of glass and the resin film 5 in order from a side of the surface protector 4. At this time, the first transparent conductive film of each photovoltaic element 1 is arranged closer to the surface protector 4 of the incidence side. Thereafter a vacuum laminating process is performed while heating, thereby forming the photovoltaic module 10 according to this embodiment shown in
According to this embodiment, as hereinabove described, the first transparent conductive film including the first indium oxide layer having (222) orientation and the two X-ray diffraction peaks is provided on a surface of the n-type single-crystalline silicon substrate closer to the incidence side while the second transparent conductive film including the second indium oxide layer having (222) orientation and the one X-ray diffraction peak is provided on the surface of the n-type single-crystalline silicon substrate opposite to the incidence side, whereby warping can be inhibited from occurring in the photovoltaic element 1 even in a case where the temperature of the photovoltaic elements 1 is increased by light incidence, thereby allowing improvement of weather resistance. Consequently, the photovoltaic elements 1 capable of suppressing reduction in cell output (Pmax) after a lapse of a long time by the improvement of weather resistance can be obtained.
A description will be now made of experiments made for confirming effects of the photovoltaic elements 1 according to this embodiment and the photovoltaic module 10 comprising the photovoltaic elements 1, with reference to
First, with reference to
As the sample according to Example 1-1, a target consisting of a sintered body of In2O3 powder containing about 1 percent by weight of WO3 powder was employed for preparing a photovoltaic element formed on a p-type amorphous silicon layer formed on an n-type single-crystalline silicon substrate with a first transparent conductive film (IWO film) closer to an incidence side, having a thickness of about 100 nm by ion plating. At this time, the pressure of a gas mixture of Ar and O2 was about 0.7 Pa, the partial pressure of Ar gas in the gas mixture was about 0.36 Pa. In order to excellently detect a signal of the X-ray diffraction spectrum, the n-type single-crystalline silicon substrate having a relatively flat front surface was employed. In the sample according to Example 1-1, a first collector closer to the incidence side, and an i-type amorphous silicon layer, an n-type amorphous silicon layer, a second transparent conductive film and a second collector on an opposite side to the incidence side (back surface side of the n-type single-crystalline silicon substrate) were not formed, and heat treatment was carried out at about 200° C. for about 80 minutes in consideration of heat treatment in forming the first and second collectors. The remaining structures of this sample according to Example 1-1 and a process of fabricating the same were similar to those of the photovoltaic element 1 according to the aforementioned embodiment. In the sample according to Example 1-2, a first transparent conductive film was formed at a pressure of a gas mixture of Ar and O2 of about 1.0 Pa and a partial pressure of Ar gas in the gas mixture of about 0.36 Pa. In the sample according to Example 1-3, a first transparent conductive film was formed at a pressure of a gas mixture of Ar and O2 of about 0.4 Pa and a partial pressure of Ar gas in the gas mixture of about 0.36 Pa. In a sample according to comparative example 1-1, a first transparent conductive film was formed at a pressure of a gas mixture of Ar and O2 of about 1.3 Pa and a partial pressure of Ar gas in the gas mixture of about 0.36 Pa. Conditions other than the aforementioned conditions for preparing the samples according to Examples 1-2 and 1-3 and comparative example 1-1 were similar to those of the sample according to Example 1-1. Partial pressures of Ar gas in Examples 1-1, 1-2 and 1-3 and comparative example 1-1 (about 0.36 Pa) were the same. From this, it is shown that when the pressure of the gas mixture of Ar and O2 is large, the content of oxygen (O2) in the gas mixture is increased. X-ray diffraction spectra were measured as to these samples with an X-ray analyzer. Results thereof are shown in
As shown in
With reference to
In the samples according to Example 2-1, Example 2-2, Example 2-3 and comparative example 2-1, an n-type single-crystalline silicon substrate with a front surface formed thereon with a texture structure (irregular configuration) was employed, and a first collector and a second collector were formed on an upper surface of a first transparent conductive film (IWO film) closer to an incidence side and a lower surface of the n-type single-crystalline silicon substrate, respectively, dissimilarly to the samples according to the aforementioned Example 1-1, Example 1-2, Example 1-3 and comparative example 1-1. The remaining structures of the samples according to Example 2-1, Example 2-2, Example 2-3 and comparative example 2-1 and processes of fabricating the IWO films were similar to those of the samples according to the aforementioned Example 1-1, Example 1-2, Example 1-3 and comparative example 1-1, respectively. More specifically, a pressure of a gas mixture of Ar and O2 was about 0.7 Pa in Example 2-1, a pressure of a gas mixture of Ar and O2 was about 1.0 Pa in Example 2-2, and a pressure of a gas mixture of Ar and O2 was about 0.4 Pa in Example 2-3. A pressure of a gas mixture of Ar and O2 was about 1.3 Pa in comparative example 2-1. Thus, in the IWO films according to Examples 2-1 and 2-2, second peaks (P2) on high angle sides having peak intensity levels lower than the first peaks (P1) on low angle sides were obtained similarly to Examples 1-1 and 1-2 shown in
The cell outputs (Pmax) were normalized based on the cell outputs (Pmax) by a normalized photovoltaic element comprising a transparent conductive film closer to an incidence side, consisting of an ITO film having two peaks of a first peak (P1) on a low angle side of an angle 2θ (θ: X-ray diffraction angle) of 30.1±0.1 degrees and a second peak (P2) on a high angle side having a peak intensity level higher than the first peak (P1) and an angle 2θ (θ: X-ray diffraction angle) of 30.6±0.1 degrees. In the normalized photovoltaic element, a target consisting of a sintered body of In2O3 powder containing about 5 percent by weight of SnO2 powder was employed by DC sputtering for forming a first transparent conductive film (ITO film). Forming conditions of the first transparent conductive film (ITO film) by DC sputtering were a substrate temperature of 60° C., an Ar flow rate of 200 sccm, a pressure of 0.5 Pa, DC power of 1 kW and a magnetic field of 2000 G applied to a cathode. The remaining structures of the normalized photovoltaic element and a process of fabricating the same are similar to the aforementioned Example 2-1.
As shown in
With reference to
As the sample according to Example 3-1, a target consisting of a sintered body of In2O3 powder containing about 1 percent by weight of WO3 powder was employed for preparing a photovoltaic element formed on a p-type amorphous silicon layer with a first transparent conductive film (IWO film) closer to an incidence side, having a thickness of about 100 nm by ion plating. At this time, a pressure of a gas mixture of Ar and O2 was about 0.7 Pa, a partial pressure of Ar gas in the gas mixture was about 0.36 Pa. In order to excellently detect a signal of the X-ray diffraction spectrum, an n-type single-crystalline silicon substrate having a relatively flat front surface was employed. In the sample according to Example 3-1, a first collector closer to the incidence side and an i-type amorphous silicon layer, an n-type amorphous silicon layer, a second transparent conductive film and a second collector on an opposite side to the incidence side (back surface side of the n-type single-crystalline silicon substrate) were not formed, and heat treatment was carried out at about 200° C. for about 80 minutes in consideration of heat treatment in forming the first and second collectors. The remaining structures of the sample according to Example 3-1 and a process of fabricating the same were similar to those of the photovoltaic element 1 according to the aforementioned embodiment. The samples according to Examples 3-2, 3-3, 3-4, 3-5, 3-6, 3-7, 3-8 and 3-9 were prepared from targets having the contents of WO3 powder of about 1 percent by weight, about 3 percent by weight, about 3 percent by weight, about 4 percent by weight, about 4 percent by weight, about 4 percent by weight, about 1 percent by weight and about 3 percent by weight respectively. The samples according to Examples 3-2, 3-3, 3-4, 3-5, 3-6, 3-7, 3-8 and 3-9 were prepared at pressures of a gas mixture of Ar and O2 of about 1.0 Pa, about 0.7 Pa, about 1.0 Pa, about 0.4 Pa, about 0.7 Pa, about 1.0 Pa, about 0.4 Pa and about 0.4 Pa, and partial pressures of Ar gas in the gas mixture of about 0.36 Pa, respectively. The samples according to comparative examples 3-1, 3-2, 3-3, 3-4, 3-5, 3-6 and 3-7 were prepared from targets having the contents of WO3 powder of about 1 percent by weight, about 3 percent by weight, about 4 percent by weight, about 5 percent by weight, about 5 percent by weight, about 5 percent by weight and about 5 percent by weight, respectively. The samples according to comparative examples 3-1, 3-2, 3-3, 3-4, 3-5, 3-6 and 3-7 were prepared at pressures of a gas mixture of Ar and O2 of about 1.3 Pa, about 1.3 Pa, about 1.3 Pa, about 0.4 Pa, about 0.7 Pa about 1.0 Pa and about 1.3 Pa and partial pressures of Ar gas in the gas mixture of about 0.36 Pa, respectively. Conditions other than the aforementioned conditions for preparing the samples according to Examples 3-2 to 3-9 and comparative examples 3-1 to 3-7 were similar to those of the sample according to Example 3-1. X-ray diffraction spectra were measured as to these samples of Examples 3-1 to 3-9 and comparative examples 3-1 to 3-7 with an X-ray analyzer, and the intensity ratios (P1/P2) between the first peaks (P1) and the second peaks (P2) of the first transparent conductive films closer to the incidence sides respectively were measured. Results thereof are shown in
As shown in
With reference to
An n-type single-crystalline silicon substrate with a surface formed thereon with a texture structure (irregular configuration) was employed for the samples according to Examples 4-1 to 4-9 and comparative example 4-1 dissimilarly to the samples according to the aforementioned Examples 3-1 to 3-9 and comparative example 3-1, and first and second collectors were formed on an upper surface of a first transparent conductive film (IWO film) closer to an incidence side and a lower surface of an n-type single-crystalline silicon substrate, respectively. The remaining structures of the samples according to Examples 4-1 to 4-9 and comparative example 4-1 and processes of fabricating the IWO films were similar to those of the samples according to the aforementioned Examples 3-1 to 3-9 and comparative example 3-1. Photovoltaic modules including photovoltaic elements according to Examples 4-1 to 4-9 and comparative example 4-1 were prepared by employing a fabricating process similar to the photovoltaic module 10 according to the aforementioned embodiment. In the samples according to Examples 4-1 to 4-9 and comparative example 4-1, acceleration tests were carried out by employing a high permeable PVF film as a back surface film 5. The acceleration tests were carried out under a condition of a humidity of 85% and a temperature of 85° C. for 2000 hours. Cell outputs (Pmax) were measured before and after the acceleration tests, and weather resistance was calculated by dividing the cell output (Pmax) after the acceleration test by the cell output (Pmax) before the acceleration test for normalizing weather resistance. Results thereof are shown in
As shown in
In the samples according to Examples 4-1 to 4-7 in which the intensity ratios (P1/P2) between the first peaks (P1) and the second peaks (P2) of the first transparent conductive films are more than 1, normalized weather resistance was about 100.92% to about 101.63%. In the samples according to Examples 4-8 and 4-9, in which the intensity ratios (P1/P2) between the first peaks (P1) and the second peaks (P2) of the first transparent conductive films are less than 1, normalized weather resistance was about 99.90% and about 100.20%, respectively. From the above, in order to improve weather resistance of the photovoltaic element, it is conceivably desirable that the intensity ratio (P1/P2) between the first peak (P1) and the second peak (P2) of the first transparent conductive film closer to the incidence side is at least 1.
With reference to
An n-type single-crystalline silicon substrate with a surface formed thereon with a texture structure (irregular configuration) was employed for the samples according to Examples 5-1 to 5-9, and comparative examples 5-1 to 5-7 dissimilarly to the samples according to the aforementioned Examples 3-1 to 3-9 and comparative examples 3-1 to 3-7, and first and second collectors were formed on an upper surface of a first transparent conductive film (IWO film) closer to an incidence side and a lower surface of an n-type single-crystalline silicon substrate, respectively. The remaining structures of the samples according to Examples 5-1 to 5-9 and comparative examples 5-1 to 5-7 and processes of fabricating the IWO films were similar to those of the samples according to the aforementioned Examples 3-1 to 3-9 and comparative examples 3-1 to 3-7, respectively. Cell outputs (Pmax) were measured as to these samples and normalized. Results thereof are shown in
As shown in
The intensity ratios (P1/P2) between the first peaks (P1) and the second peaks (P2) of the first transparent conductive films according to the aforementioned Examples 3-1 to 3-4, 3-8 and 3-9 having the same structure as Examples 5-1 to 5-4, 5-8 and 5-9 in which the contents of WO3 in the targets having the normalized cell outputs (Pmax) of 1 or more were 1 percent by weight or 3 percent by weight, and fabricated by the same process as Examples 5-1 to 5-4, 5-8 and 5-9 were 2 or less as shown in
A description will be made of results of evaluation of the relation between the intensity ratios (P1/P2) between first peaks (P1) and second peaks (P2) of transparent conductive films closer to incidence sides respectively, consisting of ITO films, dissimilarly to the first transparent conductive films closer to the incidence sides, consisting of the IWO films shown in
As the sample according to Example 6-1, a target consisting of a sintered body of In2O3 powder containing about 3 percent by weight of SnO2 powder was employed for preparing a photovoltaic element formed on a p-type amorphous silicon layer with a first transparent conductive film (ITO film) of about 100 nm in thickness by ion plating. The remaining structures of the photovoltaic element and a process of fabricating the same are similar to those of the photovoltaic element according to the aforementioned Example 4-1. A photovoltaic module including the photovoltaic element according to Example 6-1 was prepared by employing a fabricating process similar to the photovoltaic module 10 according to the aforementioned embodiment. In the sample according to Example 6-1, an acceleration test was carried out by employing a high permeable PVF film as a back surface film 5. The acceleration test was carried out under a condition of a humidity of 85% and a temperature of 85° C. for 2000 hours. Cell outputs (Pmax) were measured before and after the acceleration test, and weather resistance was calculated by dividing the cell output (Pmax) after the acceleration test by the cell output (Pmax) before the acceleration test for normalizing weather resistance. The intensity ratio (P1/P2) between the first peak (P1) and the second peak (P2) of the first transparent conductive film in the sample according to Example 6-1 was about 1.3. The normalized weather resistance of the sample according to Example 6-1 was 1.012. From these, it has been proved that the intensity ratio (P1/P2) between the first peak (P1) and the second peak (P2) of the first transparent conductive film can be 1 or more by ion plating even in a case where the first transparent conductive film is formed of an ITO film, and weather resistance can be improved not only in a case of the first transparent conductive film consisting of an IWO film but also in a case of the transparent conductive film consisting of an ITO film.
Weather resistance was normalized by a normalized photovoltaic module in which the intensity ratio (P1/P2) of a first peak (P1) and a second peak (P2) of the first transparent conductive film is about 0.5. In the normalized photovoltaic module, the first transparent conductive film (ITO film) was formed by employing a target consisting of a sintered body of In2O3 powder containing about 5 percent by weight of SnO2 powder by DC sputtering. Forming conditions of the first transparent conductive film (ITO film) by DC sputtering were a substrate temperature of 60° C., an Ar flow rate of 200 sccm, a pressure of 0.5 Pa, DC power of 1 kW and a magnetic field of 2000 G applied to a cathode. The remaining structures of the normalized photovoltaic module and a process of fabricating the same are similar to those of the photovoltaic module according to the aforementioned Example 6-1.
With reference to
As samples according to Example 7-1, and comparative examples 7-1 and 7-2, each target consisting of a sintered body of In2O3 powder containing about 1 percent by weight of WO3 powder was employed for preparing a photovoltaic element 1 formed with a first transparent conductive film (IWO film) of about 100 nm in thickness on a p-type amorphous silicon layer by ion plating. At this time, a pressure of a gas mixture of Ar and O2 was about 0.7 Pa, a partial pressure of Ar gas in the gas mixture was about 0.36 Pa. In other words, each first transparent conductive film, in which an angle 2θ (θ: X-ray diffraction angle) has two peaks and an intensity ratio (P1/P2) between a first peak (P1) and a second peak (P2) of the first transparent conductive film is more than 1, was formed. In the sample according to Example 7-1, a second transparent conductive film (IWO film) located on an opposite side to an incidence side, having a thickness of about 100 nm was formed on a back surface of an n-type amorphous silicon layer by ion plating, by employing a target consisting of a sintered body of In2O3 powder containing about 1 percent by weight of WO3 powder. At this time, a pressure of a gas mixture of Ar and O2 was about 1.3 Pa, a partial pressure of Ar gas in the gas mixture was about 0.36 Pa. In other words, in Example 7-1, the second transparent conductive film having only a peak with an angle 2θ (θ: X-ray diffraction angle) of 30.6±0.1 degrees was formed. In the sample according to comparative example 7-1, the pressure of a gas mixture of Ar and O2 in forming a second transparent conductive film was about 0.7 Pa, the partial pressure of Ar gas in the gas mixture was about 0.36 Pa. In other words, in comparative example 7-1, the second transparent conductive film, in which an angle 2θ (θ: X-ray diffraction angle) has two peaks and an intensity ratio (P1/P2) between a first peak (P1) and a second peak (P2) is more than 1, was formed. In the sample according to comparative example 7-2, the pressure of a gas mixture of Ar and O2 in forming a second transparent conductive film was about 0.4 Pa, the partial pressure of Ar gas in the gas mixture was about 0.36 Pa. In other words, in comparative example 7-2, the second transparent conductive film, in which an angle 2θ (θ: X-ray diffraction angle) has two peaks and an intensity ratio (P1/P2) between a first peak (P1) and a second peak (P2) is less than 1, was formed. A photovoltaic module including the photovoltaic element 1 according to Example 7-1, and comparative examples 7-1 and 7-2 was prepared by employing a fabricating process similar to the photovoltaic module 10 according to the aforementioned embodiment. In the samples according to Example 7-1, comparative examples 7-1 and 7-2, each acceleration test was carried out by employing a high permeable PVF film as a back surface film 5. The acceleration test was carried out under a condition of a humidity of 85% and a temperature of 85° C. for 2000 hours. Cell outputs (Pmax) were measured before and after the acceleration test, and weather resistance was calculated by dividing the cell output (Pmax) after the acceleration test by the cell output (Pmax) before the acceleration test for normalizing weather resistance. Results thereof are shown in
As shown in
Results of evaluation of the relation between pressures of a gas mixture of Ar and O2 in forming second transparent conductive films on opposite sides to incidence sides respectively and warping of photovoltaic elements due to heating will be described. In this experiment, a sample according to Example 8-1 corresponding to this embodiment and a sample according to comparative example 8-1 were prepared.
The samples according to Example 8-1 and comparative example 8-1 are similar to the photovoltaic elements 1 according to the aforementioned Example 7-1 and comparative example 7-1, respectively. The samples according to Example 8-1 and comparative example 8-1 each have a square shape with a length of 104 mm of each side in plan view. In an actual use environment, it is conceivable that temperature rise by light irradiation occurs in a first transparent conductive film closer to an incidence side, while temperature rise by light irradiation is unlikely to occur in a second transparent conductive film located on an opposite side to an incidence side since incident light is blocked by a photovoltaic element 1. In order to recreate difference between these temperatures, heating tests were carried out with respect to the samples according to Example 8-1 and comparative example 8-1 using a hot plate. The heating tests were carried out under a condition of a temperature of 150° C. for 20 minutes placing with first transparent conductive film sides down on a hot plate. Then, warping of the photovoltaic elements 1 after heating was observed. In the sample according to Example 8-1, warping did not appear in the photovoltaic element 1. On the other hand, in the sample according to comparative example 8-1, warping with 1 mm to 2 mm in the photovoltaic element 1 was confirmed. Accordingly, also in the actual use environment, warping is conceivably unlikely to occur in the photovoltaic elements 1 of the sample according to Example 8-1, while warping is conceivably likely to occur in the photovoltaic elements 1 of the sample according to comparative example 8-1. This is conceivably for the following reason: In comparative example 8-1 in which the first transparent conductive film and the second transparent conductive film in which an angle 2θ (θ: X-ray diffraction angle) has two peaks were formed closer to the incidence side and on the opposite side to the incidence side respectively, an amount of expansion of the first transparent conductive film due to the temperature rise is greater than an amount of expansion of the second transparent conductive film due to the temperature rise resulting from greater temperature rise in the first transparent conductive film closer to the incidence side by the light incidence as compared with the temperature rise in the second transparent conductive film by the light incidence. Thus, warping of the photovoltaic element 1 conceivably occurs on the second transparent conductive film side. On the other hand, in Example 8-1 in which the first transparent conductive film in which an angle 2θ (θ: X-ray diffraction angle) has two peaks was formed closer to the incidence side and the second transparent conductive film in which an angle 2θ (θ: X-ray diffraction angle) has one peak was formed on the opposite sides to the incidence side, also in a case where temperature rise in the first transparent conductive film closer to the incidence side due to the light incidence is greater as compared with the temperature rise in the second transparent conductive film due to the light incidence, the second transparent conductive film is likely to expand as compared with that in the first transparent conductive film, whereby difference between the amounts of expansion of the first transparent conductive film and the second transparent conductive film due to the temperature rise can be reduced. Thus, warping can be conceivably inhibited from occurring in the photovoltaic element 1. In Example 8-1, the warping can be thus inhibited from occurring in the photovoltaic element 1, whereby crack or peeling can be inhibited from occurring in each layer of the photovoltaic element 1. Thus, weather resistance of the photovoltaic element 1 can be conceivably improved.
Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims.
For example, while the aforementioned embodiment has been described with reference to the case of employing a photoelectric conversion layer consisting of the n-type single-crystalline silicon substrate, the present invention is not restricted to this but similar effects can be attained also when employing a photoelectric conversion layer consisting of a p-type single-crystalline silicon substrate or an amorphous silicon layer.
While the i-type amorphous silicon layer, the p-type amorphous silicon layer and the first transparent conductive film are formed on a surface of the n-type single-crystalline silicon substrate, and the i-type amorphous silicon layer, the n-type amorphous silicon layer and the second transparent conductive film are formed on the back surface of the n-type single-crystalline silicon substrate in the aforementioned embodiment, the present invention is not restricted to this but similar effects can be attained also when employing a photovoltaic element not having the aforementioned structure as long as forming the first transparent conductive film closer to the incidence side while forming the second transparent conductive film on the opposite side to the incidence side. More specifically, the i-type amorphous silicon layer, the p-type amorphous silicon layer and the first transparent conductive film may be formed on a surface of the n-type single-crystalline silicon substrate while forming the second transparent conductive film on the back surface of the n-type single-crystalline silicon substrate.
While the aforementioned embodiment has been described with reference to the case of forming the transparent conductive film on the amorphous silicon layer, the present invention is not restricted to this but similar effects can be attained also when forming the transparent conductive film according to the present invention on a microcrystalline silicon layer, an amorphous SiC layer or an amorphous SiO layer.
While the indium oxide (IWO or ITO) film doped with W or Sn is employed as the material for constituting the transparent conductive film in the aforementioned embodiment, the present invention is not restricted to this but the transparent conductive film may alternatively consist of a material prepared from indium oxide doped with a material other than W or Sn. For example, the transparent conductive film may alternatively be doped with at least one of Ti, Zn, Ta and Re or combination of two or more of Ti, Zn, Ta and Re. For example, at least one of Ti, Sn and Zn may be doped in the transparent conductive film in addition to W.
While an ion energy in forming the transparent conductive film is reduced to about 10 eV to about 20 eV by ion plating for forming the transparent conductive film consisting of the indium oxide film in the aforementioned embodiment, the present invention is not restricted to this but the transparent conductive film consisting of the indium oxide film having the first peak (P1) on the low angle side and the second peak (P2) on the high angle side having the peak intensity level lower than the first peak (P1) may alternatively formed by a method other than ion plating, in which an ion energy in forming the transparent conductive film can be reduced to about 100 eV or less. For example, also when employing sputtering performed by RF sputtering on DC sputtering while applying a strong magnetic field, pulse modulation DC discharge, RF discharge, VHF discharge, microwave discharge, ion beam deposition or the like, and setting a forming condition where an ion energy in forming the transparent conductive film can be reduced to about 100 eV or less, the transparent conductive film consisting of the indium oxide film having the first peak (P1) on the low angle side and the second peak (P2) on the high angle side having the peak intensity level lower than the first peak (P1) can be formed. In this case, when the transparent conductive film consisting of the indium oxide film including (222) peak having two peaks is formed, effects similar to those of the present invention can be attained. It has been confirmed that, when employing sputtering performed by RF sputtering on DC sputtering while applying a strong magnetic field, the transparent conductive film is formed under a condition of a magnetic field of about 3000 G, DC power of 1.2 kW and RF power of 0.6 kW, whereby an ion energy in forming the transparent conductive film can be reduced to about 100 eV or less, and plasma damage to the semiconductor layer serving as an underlayer for the transparent conductive film can be suppressed. When employing sputtering performed by RF sputtering on DC sputtering while applying a strong magnetic field, pulse modulation DC discharge, RF discharge, VHF discharge, or microwave discharge, it is desirable that the transparent conductive film is formed at about 150° C. to about 200° C. in order to facilitate the rearrangement of a deposited material (W or Sn). When employing ion beam deposition, heating in forming a film may not be performed in a similar manner to the aforementioned embodiment employing ion plating.
While Ar gas is employed when forming the indium oxide film constituting the transparent conductive film in the aforementioned embodiment, the present invention is not restricted to this but another inert gas such as He, Ne, Kr or Xe or a gas mixture thereof can be alternatively employed.
While the i-type amorphous silicon layer and the p-type amorphous silicon layer are formed by RF plasma CVD in the aforementioned embodiment, the present invention is not restricted to this but the amorphous silicon layers may alternatively be formed by another method such as evaporation, sputtering, microwave plasma CVD, ECR, thermal CVD or LPCVD (low-pressure CVD).
While the aforementioned embodiment employs silicon (Si) as a semiconductor material, the present invention is not restricted to this but any semiconductor material selected from SiGe, SiGeC, SiC, SiN, SiGeN, SiSn, SiSnN, SiSnO, SiO, Ge, GeC and GeN may alternatively be employed. In this case, the selected semiconductor material may be a crystalline material or an amorphous or microcrystalline material containing at least either hydrogen or fluorine.
While one p-i-n structure is formed in the photovoltaic element in the aforementioned embodiment, the present invention is not restricted to this but a plurality of p-i-n structures are formed in the photovoltaic element by stack.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2006-073858 | Mar 2006 | JP | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 7214872 | Maruyama et al. | May 2007 | B2 |
| 20010020486 | Tsuge | Sep 2001 | A1 |
| 20030062081 | Maruyama et al. | Apr 2003 | A1 |
| 20040177878 | Maruyama | Sep 2004 | A1 |
| Number | Date | Country |
|---|---|---|
| 2005-175160 | Jun 2005 | JP |
| 2005071760 | Aug 2005 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 20070215196 A1 | Sep 2007 | US |
