This application claims priority under 35 USC §119 to Korean Patent Application No. 10-2011-0009738 filed in the Korean Intellectual Property Office (KIPO) on JAN. 31, 2011 and Korean Patent Application No. 10-2011-0080332 filed in the Korean Intellectual Property Office (KIPO) on AUG. 11, 2011, the entire contents of which are incorporated herein by reference.
1. Field
A photovoltaic fiber, a photovoltaic cell module using the same, and a method of manufacturing the same are provided.
2. Description of the Related Art
A photovoltaic cell is a device that converts light energy into electrical energy and stores the electrical energy. Since the photovoltaic cell may solve the depletion of fossil fuels and environmental pollution, studies for developing a highly efficient and inexpensive photovoltaic cell are actively progressing.
Particularly, since a bulk crystalline silicon solar cell (bulk c-Si solar cell) has higher efficiency but is easily damaged, it may be difficult to manufacture a mobile solar cell. Furthermore, a thin film solar cell such as an amorphous silicon PIN solar cell (a-Si PIN solar cell), a DIGS (CuInGaSe2) solar cell, and the like that is manufactured on a flexible substrate has lower efficiency and is harder to manufacture.
According to at least one example embodiment, a photovoltaic fiber is manufactured by coating a material for forming an electrode and a photoactive layer on a base fiber The base fiber may include a glass fiber, a plastic fiber, a polymer fiber, a carbon fiber, and the like. The photovoltaic fiber may include a first electrode surrounding the base fiber. Also, the photovoltaic fiber may include a photoactive layer surrounding the first electrode and having a photovoltaic junction positioned in a radial direction. Furthermore, the photovoltaic fiber may include a second electrode surrounding the photoactive layer.
The material used for the photoactive layer may include amorphous silicon (a-Si), multi-crystalline silicon (inc-Si), nanocrystalline silicon (nc-Si), CIGS (CuInGaSe2), a compound semiconductor such as CdTe, an organic compound, a material having a multi-junction, and the like. The amorphous silicon may include hydrogenated amorphous silicon (a-Si:H), the multi-crystalline silicon may include hydrogenated multi-crystalline silicon (mc-Si:H), and the nanocrystalline silicon may include hydrogenated nanocrystalline silicon (nc-Si:H).
According to one example embodiment, the photovoltaic fabric includes woven photovoltaic fibers.
According to one example embodiment, the photovoltaic cell module includes a photovoltaic cell device. The photovoltaic cell module may further include at least one of a storage unit and a switching device. A conductive fiber may be used instead of the switching device.
The photovoltaic cell device may be configured to convert light energy into electrical energy, and the photovoltaic cell device may include woven photovoltaic fibers. The storage unit may be configured to store converted electrical energy, and storage unit may include at least one of woven capacitor fibers, a capacitor, and a battery. The switching device may be configured to control at least one of the converted electrical energy and stored electrical energy, and the switching device may include at least one of woven switching fibers and a thin film transistor.
Accordingly to an example embodiment a photovoltaic cell module may include a photovoltaic cell device comprising woven photovoltaic fibers. The photovoltaic cell device may include a plurality of isolation blocks and an isolation region. The isolation region may be positioned at the circumference of an isolation block. A base fiber may be exposed in the isolation region. Furthermore, the isolation block includes a first photovoltaic fiber extending in a first direction and a second photovoltaic fiber extending in a, second direction. More so, the first direction and the second direction may be different from each other.
According to one example embodiment, the photovoltaic fiber may be manufactured by a roll-to-roll process without using a large area deposition apparatus.
A photovoltaic fiber may be highly efficient, light, flexible, and easy to manufacture as a fabric. The photovoltaic fiber may be used as a power supply of wearable mobile electronics, and a photovoltaic cell module may be manufactured with a larger area without using a large area deposition apparatus. Accordingly, manufacturing costs may also be cheaper.
The above and other features and advantages will become more apparent by describing in detail example embodiments thereof with reference to the attached drawings.
Various example embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which some example embodiments are shown. At least one example embodiment may, however, be embodied in many different forms and should not be construed as limited to the example embodiments set forth herein. Rather, these example embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of at least one example embodiment to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity.
It will be understood that when an element or layer is referred to as being “on,” “connected to” or “coupled to” another element or layer, it can be directly on, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to” or “directly coupled to” another element or layer, there are no intervening elements or layers present. Like numerals refer to like elements throughout. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of an example embodiment.
Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of an example embodiment. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized example embodiments (and intermediate structures). As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of an example embodiment.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which an example embodiment belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
A photovoltaic fiber according to at least one example embodiment is manufactured by coating a material for forming an electrode and a photoactive layer on a base fiber instead of a flat substrate. Furthermore, an example embodiment illustrates the photoactive layer forming a PIN junction or a PN junction in a radial direction. Further, if necessary, at least one of an electrode material, an insulating material, and the like may be coated on the photovoltaic fiber.
The photovoltaic layer may surround a first electrode to create a photovoltaic junction. The photovoltaic junction may be formed by a semiconductor or any junction of different materials that act as an electric cell if exposed to light, or any other faun of radiant energy. More so, the photovoltaic junction may induce a voltage difference between current-carrying electrodes connected to the semiconductor, different materials or any other materials that exhibit the photovoltaic effect.
The material used for the photoactive layer may include a compound semiconductor such as amorphous silicon, multi-crystalline silicon, nanocrystalline silicon, CIGS, a compound semiconductor such as CdTe and the like, an organic compound, a material having a multi junction and the like, etc. The amorphous silicon may include hydrogenated amorphous silicon, the multi-crystalline silicon may include hydrogenated multi-crystalline silicon, and the nanocrystalline silicon may include hydrogenated nanocrystalline silicon.
The electrode material may include a transparent conductive material such as ITO, AZO, and the like, an opaque conductive material, a carbon nanotube (CNT) material, a graphene material, or a combination thereof. The carbon nanotube and graphene materials have excellent flexibility.
The insulating material may include an organic insulating material, or an inorganic insulating material such as SiOx, SiNx, and the like.
The base fiber may include a glass fiber, a plastic fiber, a polymer fiber, a carbon fiber, and the like. The base fiber may be flexible and does not cause loss of entered light, and the base fiber may be manufactured with a diameter of several micrometers to dozens of micrometers. The cost to form the base fiber may be reduced by using a lower price material such as a glass fiber, a polymer fiber, and the like. Further, unlike a flat substrate or a wafer, the base fiber is light and is not easily damaged or broken.
The photovoltaic fiber according to at least one example embodiment may be manufactured by a roll-to-roll process. For example, if gas-jet electron beam plasma chemical vapor deposition (GJ EBP CVD) equipment, a supercritical deposition apparatus, and the like are used if coating materials on a fiber, the materials may be more uniformly coated on the fiber, and a photovoltaic fiber may be manufactured more inexpensively, efficiently, and easily and with higher productivity by a roll-to-roll process without using a large area deposition apparatus. The equipment may use multiple chambers, and it may coat various kinds of materials on the fiber at a high speed at a low temperature. For example, a photoactive layer material, an electrode material, an insulating material, and the like may be uniformly coated.
Further, if a self-aligned imprint lithography (SAIL) process is used if etching the material coated on a fiber, a photovoltaic fiber may be more efficiently and easily formed because there is no alignment process.
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For example, the conductive material may be coated on the plurality of first electrodes 11, the conductive material may be coated on the plurality of photoactive layers 12, or the conductive material may be coated on the plurality of second electrodes 13. The conductive material may be used to connect the plurality of first electrodes 11, the plurality of photoactive layers 12 and the plurality of second electrodes 13. Thereby, as shown in
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Two connection electrodes 31 and 42 may be connected with each other by a connection member 5. For example, referring to
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When manufacturing photovoltaic fibers, different kinds of photoresists may be coated on the photovoltaic fibers extending in a column direction than the photovoltaic fibers extending in a row direction, and then a photolithography process may be applied independently or simultaneously to the photovoltaic fibers extending in the column direction and the photovoltaic fibers extending in the row direction. For example, a negative photoresist may be coated on the photovoltaic fibers extending in a column direction, and a positive photoresist may be coated on the photovoltaic fibers extending in a row direction. If a connection electrode for connecting two isolation blocks is formed using the photolithography process, interference between the photovoltaic fibers extending in a column direction and the photovoltaic fibers extending in a row direction may decrease.
The switching fiber 6 may include an insulating layer 61 that may be formed on a base fiber 60. The base fiber 60 may include a glass fiber, a plastic fiber, a polymer fiber, a carbon fiber, and the like. The base fiber 60 may be flexible, may not cause loss of entered light, and may be manufactured with a diameter of several micrometers to dozens of micrometers. The insulating layer 61 may include an organic insulating material, or an inorganic insulating material such as SiOx, SiNx, and the like.
A semiconductor layer 62 may be formed on the insulating layer 61. The semiconductor layer 62 may include a compound semiconductor such as multi-crystalline silicon, nanocrystalline silicon, amorphous silicon, GIZO, and the like, or graphene and the like. The silicon may be hydrogenated silicon.
A gate insulating layer 64 may be formed on the semiconductor layer 62. The gate insulating layer 64 may include an organic insulating material, or an inorganic insulating material such as SiOx, SiNx, and the like.
A gate electrode 65 may be formed on the gate insulating layer 64. The gate electrode 65 may include a metallic material, multi-crystalline silicon, and the like.
An interlayer insulating layer 66 may be formed on the gate electrode 65. The interlayer insulating layer 66 may include an organic insulating material, or an inorganic insulating material such as SiOx, SiNx, and the like.
When forming the switching fiber 6, a roll-to-roll process using multiple chambers may be applied as the process for foaming a photovoltaic fiber. The coating process may be performed with GJ EBP CVD equipment, a supercritical deposition apparatus, and the like, and a patterning process may be performed by a SAIL process. Thereby, the switching fiber 6 may be uniformly coated on the base fiber, and may be manufactured more inexpensively, efficiently, and easily, with a higher productivity, without using a large area deposition apparatus.
A source electrode and a drain electrode may define the semiconductor layer 62 or an ohmic contact layer (not shown) by using an ion shower apparatus, a Schottky barrier junction, implantation, and the like. Further, a lightly doped drain (LDD) region may define the semiconductor layer 62 or the ohmic contact layer through a spacer process.
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At least one of a gate electrode line 39, a source electrode line 49, and a drain electrode line 49 may be positioned on the top side of the switching fiber 6, or on the bottom side thereof. Further, at least one of the gate electrode line 39, source electrode line 49, and drain electrode line 49 may be formed by inkjet printing, and it may be simultaneously formed by a process for defining the source electrode and the drain electrode or a SAIL process.
The capacitor fiber 7 may include an insulating layer 71 formed on a base fiber 70. The base fiber 70 may include a glass fiber, a plastic fiber, a polymer fiber, a carbon fiber, and the like. The base fibers may be flexible, may not cause loss of entered light, and may be manufactured with a diameter of several micrometers to dozens of micrometers. The insulating layer 71 may include an organic insulating material, or an inorganic insulating material such as SiOx, SiNx, and the like. The insulating layer 71 may be omitted.
A first capacitor electrode 72 may be formed on the base fiber 70. The first capacitor electrode 72 may include a metallic material, multi-crystalline silicon, and the like.
A capacitor insulating layer 73 may be foamed on the first capacitor electrode 72. The insulating layer 73 may include an organic insulating material such as a ceramic material, a polymer, and the like, or inorganic insulating material and the like.
A second capacitor electrode 74 may be formed on the capacitor insulating layer 73, and the second capacitor electrode 74 may include a metallic material, multi-crystalline silicon, and the like.
An interlayer insulating layer 75 may be formed on the second capacitor electrode 74. The interlayer insulating layer 75 may include an organic insulating material, or an inorganic insulating material such as SiOx, SiNx, and the like.
When forming the capacitor fiber 7, a roll-to-roll process using multiple chambers may be applied as the process for forming a photovoltaic fiber. A coating process may be performed with GJ EBP CVD equipment, a supercritical deposition apparatus, and the like, and a patterning process may be performed by a SAIL process. Thereby, the capacitor fiber 7 may be uniformly coated on the fiber, and it may be manufactured more inexpensively, efficiently, and easily, and with a higher productivity, without using a large area deposition apparatus.
The photovoltaic cell unit 100 converts light energy into electrical energy, and the photovoltaic cell unit 100 may include woven photovoltaic fibers 1. The storage unit 700 stores converted electrical energy, and the storage unit may include at least one of woven capacitor fibers 7, a capacitor, and a battery. Further, the capacitor may be a super capacitor. The switching unit 600 controls at least one of the converted electrical energy and charged electrical energy, and the switching unit 600 may include at least one of a switching fiber 6 and a thin film transistor.
In the photovoltaic cell module shown in
The photovoltaic fiber may form a wearable woven cloth, and the photovoltaic cell module including woven photovoltaic fibers may maintain an appropriate temperature regardless of seasons. Further, the photovoltaic fiber may be used as a power supply of wearable mobile electronics. In addition, the photovoltaic fiber and the photovoltaic cell module using the same may be applied to a sail of a ship, an aerospace vehicle, and the like. Further, the photovoltaic cell module may be embedded in a material constituting a case for electronics.
While this disclosure has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that at least one example embodiment is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Number | Date | Country | Kind |
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10-2011-0009738 | Jan 2011 | KR | national |
10-2011-0080332 | Aug 2011 | KR | national |