Patent Application
20140338722
The subject matter disclosed herein relates generally to photovoltaic modules having a controlled color on their window surface, and their methods of production.
Thin film photovoltaic (PV) modules (also referred to as “solar panels”) are gaining wide acceptance and interest in the industry. Each PV module generally has a very dark visual appearance. For instance, thin film PV modules (e.g., based on thin films of CIS, CIGS, CIGSSe, CdTe, etc. as the absorber layer) generally have a dark blue or near black appearance. It would be desirable, however, to control the color of the PV device to allow for controlling the appearance of the individual module and/or the array of modules without sacrificing the efficiency of each PV device.
Aspects and advantages of the invention will be set forth in part in the following description, or may be obvious from the description, or may be learned through practice of the invention.
Thin film photovoltaic devices are generally provided that can include, in one embodiment, a transparent substrate defining an inner surface and an outer surface; a thin film stack on the inner surface of the transparent substrate; an encapsulation substrate on the thin film stack; and a color reflection film on the outer surface of the transparent substrate. The thin film stack generally has a photovoltaic heterojunction (e.g., formed from a n-type window thin film layer and an absorber thin film layer). Generally, the color reflection film comprises a colorant, such as a refractive material (e.g., a nitride material, an oxide material, or mixtures thereof).
Methods are also generally provided for forming such a photovoltaic device, and for forming an array of photovoltaic devices to define an image.
In one embodiment, for instance, a method is generally disclosed for forming an image on an array of photovoltaic modules. This method can include creating a digital image on a computing device, and overlaying the digital image on a digital representation of a solar array to generate an image map. The digital representation of the solar array generally includes a plurality of array segments that each correspond to an individual photovoltaic device. A color reflection film can then be formed on an outer surface of the individual photovoltaic devices using the image map such that the color reflection film on each individual photovoltaic device corresponds to one of the array segments of the digital representation of the solar array. Finally, the individual photovoltaic devices can be arranged into an array such that the image is formed by the collective photovoltaic devices.
These and other features, aspects and advantages of the present invention will become better understood with reference to the following description and appended claims. The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
A full and enabling disclosure of the present invention, including the best mode thereof, directed to one of ordinary skill in the art, is set forth in the specification, which makes reference to the appended figures, in which:
Repeat use of reference characters in the present specification and drawings is intended to represent the same or analogous features or elements.
Reference now will be made in detail to embodiments of the invention, one or more examples of which are illustrated in the drawings. Each example is provided by way of explanation of the invention, not limitation of the invention. In fact, it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope or spirit of the invention. For instance, features illustrated or described as part of one embodiment can be used with another embodiment to yield a still further embodiment. Thus, it is intended that the present invention covers such modifications and variations as come within the scope of the appended claims and their equivalents.
In the present disclosure, when a layer is being described as “on” or “over” another layer or substrate, it is to be understood that the layers can either be directly contacting each other or have another layer or feature between the layers. Thus, these terms are simply describing the relative position of the layers to each other and do not necessarily mean “on top of” since the relative position above or below depends upon the orientation of the device to the viewer. Additionally, although the invention is not limited to any particular film thickness, the term “thin” describing any film layers of the photovoltaic device generally refers to the film layer having a thickness less than about 10 micrometers (“microns” or “μm”).
It is to be understood that the ranges and limits mentioned herein include all ranges located within the prescribed limits (i.e., subranges). For instance, a range from about 100 to about 200 also includes ranges from 110 to 150, 170 to 190, 153 to 162, and 145.3 to 149.6. Further, a limit of up to about 7 also includes a limit of up to about 5, up to 3, and up to about 4.5, as well as ranges within the limit, such as from about 1 to about 5, and from about 3.2 to about 6.5.
Chemical elements are discussed in the present disclosure using their common chemical abbreviation, such as commonly found on a periodic table of elements. For example, hydrogen is represented by its common chemical abbreviation H; helium is represented by its common chemical abbreviation He; and so forth.
Thin film photovoltaic devices are generally provided that have a color reflection film on at least a portion of the outer surface of the transparent substrate. The color reflection film includes a transparent material having a refractive index that changes the perceived color of the face of the module. Color reflection films having different index materials deposited on the outer surfaces of the transparent substrate (e.g., a glass substrate) can produce different color reflections. When an array of such modules is formed, modules within the array can have a color reflection film of varying refractive indexes on their respective outer surfaces in order to form an image (e.g., logos, advertisements, alphanumeric characters, pictures, etc.) in the array. For example, when included within a very large array, individual modules can form pixels of a large picture. Alternatively, in smaller arrays, the outer surface(s) of the transparent substrate of individual modules can be patterned one or more color reflection film on its surface (e.g., via a masking method). In this way, an array or field of modules can act as advertisement in addition to producing power.
Referring to
Generally, the color reflection film 30 includes an high transmission material that has a refractive index that is higher or lower relative to the refractive index of the transparent substrate 12. In one embodiment, the color reflective film 30 includes a colorant (e.g., a refractive material, a pigment, a dye, etc.) on the outer surface 11 of the transparent substrate 12 in a manner that allows a majority of light to pass through the color reflective film 30 into the device 10. By controlling the thickness of the color reflection film 30, the selection of the colorant (i.e., the refractive index of the colorant), and/or the concentration of the colorant present on the outer surface 11 of the transparent substrate 12, different colors can be achieved on the outer surface 11 of the device 10. For instance, the color reflective film 30 can allow at least about 95% of electromagnetic radiation in the visible spectrum (e.g., wavelengths from about 390 to about 700 nm) to pass through the film 30 and into the device 10, such as about 98% to about 99.99%. Thus, the amount of electromagnetic radiation that reaches the underlying thin film stack 25 is not substantially impaired by the presence of the color reflective thin film 30 on the outer surface 11 of the transparent substrate 12.
In one embodiment, a refractive material can be included in the color reflective thin film 30, including but not limited to, nitride materials (e.g., Si3N4, etc.), oxide materials (e.g., TiO2, etc.), or mixtures thereof. However, any other material with an index of refraction different than (e.g., greater than or lower than) that of the transparent substrate 12 could, in principle, be used.
Such refractive materials can be dispersed on the outer surface 11 of the transparent substrate 12 in a concentration that allows at least about 95% of electromagnetic radiation in the visible spectrum (e.g., wavelengths from about 390 to about 700 nm) to pass through the color reflective thin film 30 and into the device 10, such as about 98% to about 99.99%.
In one particular embodiment, the refractive material can be deposited as a thin film as the color reflective layer 30 onto the outer surface 11 of the transparent substrate 12. The refractive material can be deposited alone (i.e., as a sole component of the thin film) or can be dispersed within a transparent medium (e.g., a transparent oxide). For example, the color reflective layer 30 containing the refractive material can be deposited via sputtering, sublimation, chemical vapor deposition, spray deposition, roll coating chemical bath deposition, or other deposition methods. The thickness of the color reflective film 30 can be deposited to be up to about 5 μm, such as about 10 nm to about 1 μm (e.g., about 50 nm to about 500 nm). With these relatively small thicknesses of the color reflective film 30, deposited as a thin film, the electromagnetic radiation in the visible spectrum can readily pass through the color reflective thin film 30 and into the device 10 for conversion to electric energy without any substantial effect on the device 10's efficiency.
The thickness of the color reflective layer 30 can also be varied depending on the concentration of the refractive material within the color reflective film 30. For example, when deposited as a thin film layer without any other materials present (i.e., the color reflective film 30 consists essentially of the refractive material), the thickness of the thin film layer can be relatively small, such as about 10 nm to about 100 nm. However, when deposited as a thin film where the refractive material is dispersed within a transparent medium, the color reflective film 30 can be somewhat thicker due to the dilution of the refractive material within the color reflective film 30 while not substantially affecting the amount of light entering the device 10, such as about 50 nm to about 5 μm. In one embodiment, the transparent medium can include a transparent oxide, including but not limited to, such as tin oxide, zinc oxide, SiO2, or mixtures thereof.
Alternatively, the colorant (e.g., a refractive material, a pigment, and/or dye) can be dispersed within a transparent polymeric binder. For example, the colorant can be dispersed within a polymeric binder material and then coated on the outer surface 11 of the transparent substrate 12. The transparent polymeric binder can include, but is not limited to, a polyolefin material (e.g., polyethylene, polypropylene, etc.), a polyurethane, a polyester, a polyethylene terephthalate (PET), a (meth)acrylic resin, an epoxy resin, etc.
Such a polymeric layer can be coated utilizing known coating techniques, such as by roll, blade, Meyer rod, air-knife coating procedures, extrusion coating, etc. The color reflective film 30 containing a polymeric material can have, in particular embodiments, a thickness of about 1 μm to about 1 mm.
No matter the composition or method of formation/deposition, the color reflective film 30 can be formed in a substantially uniform manner on the outer surface 11 of the transparent substrate 12. Multiple devices 10 can be positioned within an array to form a pattern, if desired. Such an array can be formed from devices 10 having different color reflective films that appear different (e.g., having different colorants) to define a pattern within the array.
Alternatively, as shown in
Referring to
Then, the color reflective film 30 is applied/deposited onto the outer surface 11 and over the mask 40, as shown in
In the embodiment of
In one embodiment, such as shown in
Referring to
Processor 106 can be a microprocessor or other suitable processing device configured to execute software instructions rendered in a computer-readable form stored in memory 104. When software is used, any suitable programming, scripting, or other type of language or combinations of languages may be used to implement the teachings contained herein. In other embodiments, the methods disclosed herein may alternatively be implemented by hard-wired logic or other circuitry, including, but not limited to application-specific circuits.
As illustrated computing device 102 can be coupled to input device(s) 108 and output device(s) 110. Exemplary input device(s) 108 can include but are not limited to a keyboard, touch-screen monitor, eye tracker, microphone, mouse and the like. Exemplary output device(s) 110 can include but are not limited to monitors, printers or other devices for visually depicting output data created in accordance with the disclosed technology.
Computing device 102 can be optionally connected to other computing devices 120 over network 112. Network 112 can be comprise any number and/or combination of hard-wired, wireless, or other communication links. One of ordinary skill in the art will recognize that the inherent flexibility of computer-based systems allows for a great variety of possible configurations, combinations, and divisions of tasks and functionality between and among components. For instance, the processes discussed herein may be implemented using single computing device 102 or across multiple computing devices, such as computing device 102 and computing device(s) 120 working in combination. Computing device 102 can also be coupled to deposition system 130 over network 112. Computer based system 100 can send and receive information and data from the actual deposition system 130 (form forming, e.g., the color reflective film 30 on a device 10) for use by imaging software stored in memory 104 of computing device 102.
For example, a digital image can be created on a computing device 102 and overlaid on a digital representation of a solar array to generate an image map. Generally, the digital representation of the solar array comprises a plurality of array segments that each correspond to an individual photovoltaic device 10. A color reflection film 30 can then be formed on an outer surface of the individual photovoltaic devices using the image map such that the color reflection film 30 on each individual photovoltaic device 10 corresponds to one of the array segments of the digital representation of the solar array. Finally, the individual photovoltaic devices 10 can be arranged into an array 100, 103 such that the image 31 is formed by the collective photovoltaic devices 10.
Referring to
As stated, the device 10 shown in
In one particular embodiment, the thin film stack 25 includes a transparent conductive oxide (TCO) layer 14, an optional resistive transparent buffer layer 16, an n-type layer 18 (e.g., a cadmium sulfide layer), a p-type absorber layer 20 (e.g., a cadmium telluride layer), a back contact layer 22. The n-type layer 18 and the p-type absorber layer 20 generally form a p-n junction 19 in the device 10.
Generally, the reflective color film and its method of application can be used in the formation of any photovoltaic device 10, such as the exemplary device 10 shown in
The exemplary device 10 of
The transparent conductive oxide (TCO) layer 14 is shown on the inner surface 13 of the transparent substrate 12 of the exemplary device 10. The TCO layer 14 allows light to pass through with minimal absorption while also allowing electric current produced by the device 10 to travel sideways to opaque metal conductors (not shown). For instance, the TCO layer 14 can have a sheet resistance less than about 30 ohm per square, such as from about 4 ohm per square to about 20 ohm per square (e.g., from about 8 ohm per square to about 15 ohm per square). The TCO layer 14 generally includes at least one conductive oxide, such as tin oxide, zinc oxide, or indium tin oxide, or mixtures thereof. Additionally, the TCO layer 14 can include other conductive, transparent materials. The TCO layer 14 can also include zinc stannate and/or cadmium stannate.
The TCO layer 14 can be formed by sputtering, chemical vapor deposition, spray pyrolysis, or any other suitable deposition method. In one particular embodiment, the TCO layer 14 can be formed by sputtering, either DC sputtering or RF sputtering, on the glass 12. For example, a cadmium stannate layer can be formed by sputtering a hot-pressed target containing stoichiometric amounts of SnO2 and CdO onto the glass 12 in a ratio of about 1 to about 2. The cadmium stannate can alternatively be prepared by using cadmium acetate and tin (II) chloride precursors by spray pyrolysis.
In certain embodiments, the TCO layer 14 can have a thickness between about 0.1 μm and about 1 μm, for example from about 0.1 μm to about 0.5 μm, such as from about 0.25 μm to about 0.45 μm. Suitable flat glass substrates having a TCO layer 14 formed on the superstrate surface can be purchased commercially from various glass manufactures and suppliers. For example, a particularly suitable glass 12 including a TCO layer 14 includes a glass commercially available under the name TEC 15 TCO from Pilkington North America Inc. (Toledo, Ohio), which includes a TCO layer having a sheet resistance of 15 ohms per square.
The resistive transparent buffer layer 16 (RTB layer) is shown on the TCO layer 14 on the exemplary cadmium telluride thin film photovoltaic device 10. The RTB layer 16 is generally more resistive than the TCO layer 14 and can help protect the device 10 from chemical interactions between the TCO layer 14 and the subsequent layers during processing of the device 10. For example, in certain embodiments, the RTB layer 16 can have a sheet resistance that is greater than about 1000 ohms per square, such as from about 10 kOhms per square to about 1000 MOhms per square. The RTB layer 16 can also have a wide optical bandgap (e.g., greater than about 2.5 eV, such as from about 2.7 eV to about 3.0 eV).
Without wishing to be bound by a particular theory, it is believed that the presence of the RTB layer 16 between the TCO layer 14 and the cadmium sulfide layer 18 can allow for a relatively thin cadmium sulfide layer 18 to be included in the device 10 by reducing the possibility of interface defects (i.e., “pinholes” in the cadmium sulfide layer 18) creating shunts between the TCO layer 14 and the cadmium telluride layer 20. Thus, it is believed that the RTB layer 16 allows for improved adhesion and/or interaction between the TCO layer 14 and the cadmium telluride layer 20, thereby allowing a relatively thin cadmium sulfide layer 18 to be formed thereon without significant adverse effects that would otherwise result from such a relatively thin cadmium sulfide layer 18 formed directly on the TCO layer 14.
The RTB layer 16 can include, for instance, a combination of zinc oxide (ZnO) and tin oxide (SnO2), which can be referred to as a zinc tin oxide layer (“ZTO”). In one particular embodiment, the RTB layer 16 can include more tin oxide than zinc oxide. For example, the RTB layer 16 can have a composition with a stoichiometric ratio of ZnO/SnO2 between about 0.25 and about 3, such as in about an one to two (1:2) stoichiometric ratio of tin oxide to zinc oxide. The RTB layer 16 can be formed by sputtering, chemical vapor deposition, spraying pryolysis, or any other suitable deposition method. In one particular embodiment, the RTB layer 16 can be formed by sputtering, either DC sputtering or RF sputtering, on the TCO layer 14. For example, the RTB layer 16 can be deposited using a DC sputtering method by applying a DC current to a metallic source material (e.g., elemental zinc, elemental tin, or a mixture thereof) and sputtering the metallic source material onto the TCO layer 14 in the presence of an oxidizing atmosphere (e.g., O2 gas). When the oxidizing atmosphere includes oxygen gas (i.e., O2), the atmosphere can be greater than about 95% pure oxygen, such as greater than about 99%.
In certain embodiments, the RTB layer 16 can have a thickness between about 0.075 μm and about 1 μm, for example from about 0.1 μm to about 0.5 μm. In particular embodiments, the RTB layer 16 can have a thickness between about 0.08 μm and about 0.2 μm, for example from about 0.1 μm to about 0.15 μm.
The n-type window layer 18 is shown on resistive transparent buffer layer 16 of the exemplary device 10. The n-type window layer 18 is a n-type layer that includes, in one particular embodiment, cadmium sulfide (CdS) but may also include other materials, such as zinc sulfide, cadmium zinc sulfide, etc., and mixtures thereof as well as dopants and other impurities. For example, the n-type window layer can include cadmium sulfide (i.e., a cadmium sulfide layer), and may further include oxygen up to about 25% by atomic percentage, for example from about 5% to about 20% by atomic percentage. Such a cadmium sulfide layer can have a wide band gap (e.g., from about 2.25 eV to about 2.5 eV, such as about 2.4 eV) in order to allow most radiation energy (e.g., solar radiation) to pass. As such, the n-type window layer 18 is considered a transparent layer on the device 10.
The n-type window layer 18 can be formed by sputtering, chemical vapor deposition, chemical bath deposition, and other suitable deposition methods. In one particular embodiment, the n-type window layer 18 can be formed by sputtering, either direct current (DC) sputtering or radio frequency (RF) sputtering, on the resistive transparent buffer layer 16. Sputtering deposition generally involves ejecting material from a target, which is the material source, and depositing the ejected material onto the substrate to form the film. DC sputtering generally involves applying a voltage to a metal target (i.e., the cathode) positioned near the substrate (i.e., the anode) within a sputtering chamber to form a direct-current discharge. The sputtering chamber can have a reactive atmosphere (e.g., an oxygen atmosphere, nitrogen atmosphere, fluorine atmosphere) that forms a plasma field between the metal target and the substrate. The pressure of the reactive atmosphere can be between about 1 mTorr and about 20 mTorr for magnetron sputtering. When metal atoms are released from the target upon application of the voltage, the metal atoms can react with the plasma and deposit onto the surface of the substrate. For example, when the atmosphere contains oxygen, the metal atoms released from the metal target can form a metallic oxide layer on the substrate. Conversely, RF sputtering generally involves exciting a capacitive discharge by applying an alternating-current (AC) or radio-frequency (RF) signal between the target (e.g., a ceramic source material) and the substrate. The sputtering chamber can have an inert atmosphere (e.g., an argon atmosphere) having a pressure between about 1 mTorr and about 20 mTorr.
Due to the presence of the resistive transparent layer 16, the n-type window layer 18 can have a thickness that is less than about 0.1 μm, such as between about 10 nm and about 100 nm, such as from about 40 nm to about 80 nm, with a minimal presence of pinholes between the resistive transparent layer 16 and the n-type window layer 18. Additionally, a n-type window layer 18 having a thickness less than about 0.1 μm reduces any adsorption of radiation energy by the n-type window layer 18, effectively increasing the amount of radiation energy reaching the underlying cadmium telluride layer 20.
The p-type absorber layer 20 is shown on the n-type window layer 18 in the exemplary thin film photovoltaic device 10 of
The cadmium telluride layer 20 can be formed by any known process, such as vapor transport deposition, chemical vapor deposition (CVD), spray pyrolysis, electro-deposition, sputtering, close-space sublimation (CSS), etc. In one particular embodiment, the cadmium sulfide layer 18 is deposited by a sputtering and the cadmium telluride layer 20 is deposited by close-space sublimation. In particular embodiments, the cadmium telluride layer 20 can have a thickness between about 0.1 μm and about 10 μm, such as from about 1 μm and about 5 μm. In one particular embodiment, the cadmium telluride layer 20 can have a thickness between about 2 μm and about 4 μm, such as about 3 μm.
A series of post-forming treatments can be applied to the exposed surface of the cadmium telluride layer 20. These treatments can tailor the functionality of the cadmium telluride layer 20 and prepare its surface for subsequent adhesion to the back contact layers, particularly the conductive paste layer 23. For example, the cadmium telluride layer 20 can be annealed at elevated temperatures (e.g., from about 350° C. to about 500° C., such as from about 375° C. to about 424° C.) for a sufficient time (e.g., from about 1 to about 10 minutes) to create a quality p-type absorber layer of cadmium telluride. Without wishing to be bound by theory, it is believed that annealing the cadmium telluride layer 20 (and the device 10) converts the weakly p-type cadmium telluride layer 20 to a more strongly p-type cadmium telluride layer 20 having a relatively low resistivity. Additionally, the cadmium telluride layer 20 can recrystallize and undergo grain growth during annealing.
Annealing the cadmium telluride layer 20 can be carried out in the presence of cadmium chloride in order to dope the cadmium telluride layer 20 with chloride ions. For example, the cadmium telluride layer 20 can be washed with an aqueous solution containing cadmium chloride then annealed at the elevated temperature.
In one particular embodiment, after annealing the cadmium telluride layer 20 in the presence of cadmium chloride, the surface can be washed to remove any cadmium oxide formed on the surface. This surface preparation can leave a Te-rich surface on the cadmium telluride layer 20 by removing oxides from the surface, such as CdO, CdTeO3, CdTe2O5, etc. For instance, the surface can be washed with a suitable solvent (e.g., ethylenediamine also known as 1,2 diaminoethane or “DAE”) to remove any cadmium oxide from the surface. In one embodiment, the application of the treatment solution described above, and its subsequent annealing, can be performed after annealing the cadmium telluride layer 20 in the presence of cadmium chloride and washing the surface 21.
The back contact 22 serves as the opposite electrode to the transparent conductive oxide layer 12. In one embodiment, the back contact 22 can be formed from a conductive paste layer (e.g., a graphite layer) and/or a metal contact layer. The back contact 22 is formed on, and in one embodiment is in direct contact with, the cadmium telluride layer 20.
Other layers may also be present in the thin film stack, although not specifically shown in the embodiment of
Other components (not shown) can be included in the exemplary device 10, such as buss bars, external wiring, laser etches, etc. For example, when the device 10 forms a photovoltaic cell of a photovoltaic module, a plurality of photovoltaic cells can be connected in series in order to achieve a desired voltage, such as through an electrical wiring connection. Each end of the series connected cells can be attached to a suitable conductor such as a wire or bus bar, to direct the photovoltaically generated current to convenient locations for connection to a device 10 or other system using the generated electric. A convenient means for achieving such series connections is to laser scribe the device 10 to divide the device 10 into a series of cells connected by interconnects. In one particular embodiment, for instance, a laser can be used to scribe the deposited layers of the semiconductor device 10 to divide the device 10 into a plurality of series connected cells, as described above with respect to
An encapsulating substrate 24 is laminated to the transparent substrate 12 to complete the device 10.
Methods for forming a photovoltaic device 10 and/or an array, such as described above, are also generally provided.
This written description uses examples to disclose the invention, including the best mode, and also to enable any person skilled in the art to practice the invention, including making and using any devices or systems and performing any incorporated methods. The patentable scope of the invention is defined by the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims if they include structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal languages of the claims.
