The entire disclosure of Japanese Patent Application No. 2017-105591, filed May 29, 2017 is expressly incorporated by reference herein.
The present invention relates to a technique in which a piezoelectric device causes a pressure change.
A liquid discharging head that discharges, from nozzles, a liquid such as an ink supplied to a pressure chamber by a piezoelectric device causing a pressure change in the pressure chamber is proposed in the related art. For example, a technique, in which a piezoelectric device including a diaphragm configuring a wall surface (top surface) of a pressure chamber and a piezoelectric element vibrating the diaphragm is provided for each pressure chamber, is disclosed in JP-A-2002-67307. An active layer substrate (portion that deforms due to vibration) of the diaphragm is configured of a silicon base of which a Young's modulus changes according to a direction in a crystal plane. In JP-A-2002-67307, the diaphragm is made likely to deform in a lateral direction by aligning the lateral direction of the diaphragm with a direction, in which a Young's modulus of the diaphragm in the lateral direction is lower than a Young's modulus of the diaphragm in a longitudinal direction, in a crystal plane. Thus, the displacement properties of the diaphragm are enhanced.
However, not only a Young's modulus but also a Poisson's ratio has anisotropy according to a crystal plane of the silicon base. Moreover, the Poisson's ratio and the Young's modulus are different from each other in terms of how the Poisson's ratio and the Young's modulus change according to a direction in the crystal plane. Therefore, even if a direction of the diaphragm is aligned with a direction in the crystal plane considering only a Young's modulus, a crack is likely to be generated in the diaphragm according to a Poisson's ratio in that direction. Thus, there is a possibility that the piezoelectric device becomes damaged.
An advantage of some aspects of the invention is to suppress the generation of a crack in a diaphragm.
According to an aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of a minimum value of the Poisson's ratio in the crystal plane inclusive to an average value of the Poisson's ratios in the crystal plane exclusive. According to this configuration, the Poisson's ratio in the short axis direction, which has an effect on stretching/contracting of the diaphragm in a long axis direction, is restricted to be a value that is higher than or equal to the minimum value and is lower than the average value. Therefore, even when the diaphragm is displaced in a direction of stretching due to vibration of the piezoelectric element, a force that the diaphragm contracts in the long axis direction is weak compared to a case where the Poisson's ratio of the diaphragm in the short axis direction is a high value to an extent to exceed the average value. Thus, a contracted amount in the long axis direction becomes smaller. Since the contracted amount in the long axis direction becomes smaller and the force pulling the diaphragm in the long axis direction weakens by making the Poisson's ratio in the short axis direction lower as described above, for example, stress concentration in a portion (for example, an arm portion) of the diaphragm, which contracts in the long axis direction, is also eased. Thus, the generation of a crack in the diaphragm can be suppressed.
According to another aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. The single crystal silicon base is a base of which the crystal plane is a {100} plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of a minimum value of the Poisson's ratio in the crystal plane inclusive to 0.18065 exclusive. According to this configuration, a contracted amount of the diaphragm in the long axis direction becomes smaller compared to a case where the Poisson's ratio is a high value to an extent to exceed 0.18065. Therefore, since stress concentration of the portion of the diaphragm, which contracts in the long axis direction, is also eased, the generation of a crack in the diaphragm can be suppressed.
In the piezoelectric device, the Poisson's ratio of the diaphragm in the short axis direction may be included in a range of the minimum value of the Poisson's ratio in the crystal plane inclusive to 0.0864 inclusive. According to this configuration, even when a material (for example, a material configuring the piezoelectric element and a material between the piezoelectric element and the diaphragm), of which the Poisson's ratio exceeds 0.0864, is stacked on the diaphragm, unnecessary deformation of the diaphragm accompanying stretching/contracting of the stacked material can be suppressed. Accordingly, the diaphragm can be made unlikely to be destroyed by the stretching/contracting of the stacked material.
According to still another aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. The single crystal silicon base is a base of which the crystal plane is a (100) plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, an orientation of the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of an orientation of 21 degrees toward a crystal orientation [010] with respect to a crystal orientation [011] in the crystal plane to an orientation of 21 degrees toward a crystal orientation [001] with respect to the crystal orientation [011] in the crystal plane. According to this configuration, since the Poisson's ratio of the diaphragm in the short axis direction can be made lower, a contracted amount in the long axis direction can be made smaller. Thus, the generation of a crack in the diaphragm can be suppressed.
In the piezoelectric device, the orientation of the Poisson's ratio of the diaphragm in the short axis direction may be included in a range of an orientation of 7 degrees toward the crystal orientation [010] with respect to the crystal orientation [011] in the crystal plane to an orientation of 7 degrees toward the crystal orientation [001] with respect to the crystal orientation [011] in the crystal plane. According to this configuration, since the Poisson's ratio is likely to become lower than the Poisson's ratio of the material stacked on the diaphragm, unnecessary deformation of the diaphragm accompanying stretching/contracting of the stacked material can be suppressed. Thus, the diaphragm can be made unlikely to be destroyed by the stretching/contracting of the stacked material.
According to still another aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. The single crystal silicon base is a base of which the crystal plane is a (010) plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, an orientation of the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of an orientation of 21 degrees toward a crystal orientation [−100] with respect to a crystal orientation [−101] in the crystal plane to an orientation of 21 degrees toward a crystal orientation [001] with respect to the crystal orientation [−101] in the crystal plane. According to this configuration, since the Poisson's ratio of the diaphragm in the short axis direction can be made lower, a contracted amount in the long axis direction can be made smaller. Thus, the generation of a crack in the diaphragm can be suppressed.
In the piezoelectric device, the orientation of the Poisson's ratio of the diaphragm in the short axis direction may be included in a range of an orientation of 7 degrees toward the crystal orientation [−100] with respect to the crystal orientation [−101] in the crystal plane to an orientation of 7 degrees toward the crystal orientation [001] with respect to the crystal orientation [−101] in the crystal plane. According to this configuration, since the Poisson's ratio is likely to become lower than the Poisson's ratio of the material stacked on the diaphragm, unnecessary deformation of the diaphragm accompanying stretching/contracting of the stacked material can be suppressed. Thus, the diaphragm can be made unlikely to be destroyed by the stretching/contracting of the stacked material.
According to still another aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. The single crystal silicon base is a base of which the crystal plane is a (001) plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, an orientation of the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of an orientation of 21 degrees toward a crystal orientation [010] with respect to a crystal orientation [−110] in the crystal plane to an orientation of 21 degrees toward a crystal orientation [00-1] with respect to the crystal orientation [−110] in the crystal plane. According to this configuration, since the Poisson's ratio of the diaphragm in the short axis direction can be made lower, a contracted amount in the long axis direction can be made smaller. Thus, the generation of a crack in the diaphragm can be suppressed.
In the piezoelectric device, the orientation of the Poisson's ratio of the diaphragm in the short axis direction may be included in a range of an orientation of 7 degrees toward the crystal orientation [00-1] with respect to the crystal orientation [−110] in the crystal plane to an orientation of 7 degrees toward the crystal orientation [010] with respect to the crystal orientation [−110] in the crystal plane. According to this configuration, since the Poisson's ratio is likely to become lower than the Poisson's ratio of the material stacked on the diaphragm, unnecessary deformation of the diaphragm accompanying stretching/contracting of the stacked material can be suppressed. Thus, the diaphragm can be made unlikely to be destroyed by the stretching/contracting of the stacked material.
According to still another aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. The single crystal silicon base is a base of which the crystal plane is a {110} plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of a minimum value of the Poisson's ratio in the crystal plane inclusive to 0.24127 exclusive. According to this configuration, a contracted amount of the diaphragm in the long axis direction becomes smaller compared to a case where the Poisson's ratio is a high value to an extent to exceed 0.24127. Therefore, since stress concentration of the portion of the diaphragm, which contracts in the long axis direction, is also eased, the generation of a crack in the diaphragm can be suppressed.
In the piezoelectric device, the Poisson's ratio of the diaphragm in the short axis direction may be included in a range of the minimum value of the Poisson's ratio in the crystal plane inclusive to 0.1968 inclusive. According to this configuration, even when a material (for example, a material configuring the piezoelectric element and a material between the piezoelectric element and the diaphragm), of which the Poisson's ratio exceeds 0.1968, is stacked on the diaphragm, unnecessary deformation of the diaphragm accompanying stretching/contracting of the stacked material can be suppressed. Accordingly, the diaphragm can be made unlikely to be destroyed by the stretching/contracting of the stacked material.
According to still another aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. The single crystal silicon base is a base of which the crystal plane is a (110) plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, an orientation of the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of an orientation of 20 degrees toward a crystal orientation [−111] with respect to an orientation of 7 degrees from the crystal orientation [−111] toward a crystal orientation [−112] in the crystal plane to an orientation of 25 degrees toward the crystal orientation [−112] with respect to the orientation of 7 degrees from the crystal orientation [−111] toward the crystal orientation [−112] in the crystal plane. According to this configuration, since the Poisson's ratio of the diaphragm in the short axis direction can be made lower, a contracted amount in the long axis direction can become smaller. Therefore, since stress concentration of the portion of the diaphragm, which contracts in the long axis direction, is also eased, the generation of a crack in the diaphragm can be suppressed.
In the piezoelectric device, the orientation of the Poisson's ratio of the diaphragm in the short axis direction may be included in a range of an orientation of 13 degrees toward the crystal orientation [−111] with respect to the orientation of 7 degrees from the crystal orientation [−111] toward the crystal orientation [−112] in the crystal plane to an orientation of 15 degrees toward the crystal orientation [−112] with respect to the orientation of 7 degrees from the crystal orientation [−111] toward the crystal orientation [−112] in the crystal plane. According to this configuration, since the Poisson's ratio is likely to become lower than the Poisson's ratio of the material stacked on the diaphragm, unnecessary deformation of the diaphragm accompanying stretching/contracting of the stacked material can be suppressed. Thus, the diaphragm can be made unlikely to be destroyed by the stretching/contracting of the stacked material.
According to still another aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. The single crystal silicon base is a base of which the crystal plane is a (011) plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, an orientation of the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of an orientation of 20 degrees toward a crystal orientation [1-11] with respect to an orientation of 7 degrees from the crystal orientation [1-11] toward a crystal orientation [1-12] in the crystal plane to an orientation of 25 degrees toward the crystal orientation [1-12] with respect to the orientation of 7 degrees from the crystal orientation [1-11] toward the crystal orientation [1-12] in the crystal plane. According to this configuration, since the Poisson's ratio of the diaphragm in the short axis direction can be made lower, a contracted amount in the long axis direction can become smaller. Therefore, since stress concentration of the portion of the diaphragm, which contracts in the long axis direction, is also eased, the generation of a crack in the diaphragm can be suppressed.
In the piezoelectric device, the orientation of the Poisson's ratio of the diaphragm in the short axis direction may be included in a range of an orientation of 13 degrees toward the crystal orientation [1-11] with respect to the orientation of 7 degrees from the crystal orientation [1-11] toward the crystal orientation [1-12] in the crystal plane to an orientation of 15 degrees toward the crystal orientation [1-12] with respect to the orientation of 7 degrees from the crystal orientation [1-11] toward the crystal orientation [1-12] in the crystal plane. According to this configuration, since the Poisson's ratio is likely to become lower than the Poisson's ratio of the material stacked on the diaphragm, unnecessary deformation of the diaphragm accompanying stretching/contracting of the stacked material can be suppressed. Thus, the diaphragm can be made unlikely to be destroyed by the stretching/contracting of the stacked material.
According to still another aspect of the invention, there is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a crystal plane of an anisotropic single crystal silicon base of which a Poisson's ratio varies according to a direction in the crystal plane. The single crystal silicon base is a base of which the crystal plane is a (101) plane. In a vibration region of the diaphragm, which overlaps the pressure chamber in plan view, an orientation of the Poisson's ratio of the diaphragm in a short axis direction of the smallest rectangle, which includes the vibration region, is included in a range of an orientation of 20 degrees toward a crystal orientation [11-1] with respect to an orientation of 7 degrees from the crystal orientation [11-1] toward a crystal orientation [12-1] in the crystal plane to an orientation of 25 degrees toward the crystal orientation [12-1] with respect to the orientation of 7 degrees from the crystal orientation [11-1] toward the crystal orientation [12-1] in the crystal plane. According to this configuration, since the Poisson's ratio of the diaphragm in the short axis direction can be made lower, a contracted amount in the long axis direction can become smaller. Therefore, since stress concentration of the portion of the diaphragm, which contracts in the long axis direction, is also eased, the generation of a crack in the diaphragm can be suppressed.
In the piezoelectric device, the orientation of the Poisson's ratio of the diaphragm in the short axis direction may be included in a range of an orientation of 13 degrees toward the crystal orientation [11-1] with respect to the orientation of 7 degrees from the crystal orientation [11-1] toward the crystal orientation [12-1] in the crystal plane to an orientation of 15 degrees toward the crystal orientation [12-1] with respect to the orientation of 7 degrees from the crystal orientation [11-1] toward the crystal orientation [12-1] in the crystal plane. According to this configuration, since the Poisson's ratio is likely to become lower than the Poisson's ratio of the material stacked on the diaphragm, unnecessary deformation of the diaphragm accompanying stretching/contracting of the stacked material can be suppressed. Thus, the diaphragm can be made unlikely to be destroyed by the stretching/contracting of the stacked material.
According to still another aspect of the invention, there is provided a liquid discharging head including the piezoelectric device according to any one of the aspects described above. A liquid that has filled the pressure chamber is discharged from a nozzle by the piezoelectric element vibrating the diaphragm to change a pressure of the pressure chamber. According to this configuration, the liquid discharging head including the piezoelectric device that can suppress the generation of a crack in the diaphragm can be provided.
According to still another aspect of the invention, there is provided a liquid discharging apparatus including the piezoelectric device according to any one of the aspects described above. A liquid that has filled the pressure chamber is discharged from a nozzle by the piezoelectric element vibrating the diaphragm to change a pressure of the pressure chamber. According to this configuration, the liquid discharging apparatus including the piezoelectric device that can suppress the generation of a crack in the diaphragm can be provided.
The invention will be described with reference to the accompanying drawings, wherein like numbers reference like elements.
As illustrated in
The moving mechanism 24 causes the plurality of liquid discharging heads 26 to reciprocate in an X-direction under the control of the control device 20. The X-direction is a direction intersecting (typically orthogonal to) the Y-direction in which the medium 12 is transported. The moving mechanism 24 includes a carriage 242 on which the plurality of liquid discharging heads 26 are mounted and an endless belt 244 to which the carriage 242 is fixed. It is also possible to mount the liquid container 14 on the carriage 242 with the liquid discharging heads 26.
Each of the plurality of liquid discharging heads 26 discharges an ink, which is supplied from the liquid container 14, onto the medium 12 from a plurality of nozzles (discharge holes) N under the control of the control device 20. A desired image is formed on an outer surface of the medium 12 by each of the liquid discharging heads 26 discharging an ink onto the medium 12 as the transportation of the medium 12 by the transporting mechanism 22 and the repeated reciprocation of the carriage 242 are performed at the same time. Hereinafter, a direction perpendicular to an XY-plane (for example, a plane parallel to the outer surface of the medium 12) will be referred to as a Z-direction. A direction (typical vertical direction), in which an ink is discharged by each of the liquid discharging heads 26, corresponds to the Z-direction.
As illustrated in
The pressure generating unit 35 is an element that causes a pressure change for discharging inks from the nozzles N. The pressure generating unit 35 of the embodiment is configured by a first substrate A including the pressure chamber substrate 34 and the piezoelectric device 39, a second substrate B including a wiring connection substrate (protection substrate) 38, and a drive IC 62 being bonded to each other. The piezoelectric device 39 is formed of pressure chambers C (to be described later) formed in the pressure chamber substrate 34, piezoelectric elements 37, and a diaphragm 36 disposed between the pressure chambers C and the piezoelectric elements 37, and is an element that causes a pressure change in the pressure chambers C by vibration. Details of the pressure generating unit 35 and the piezoelectric device 39 will be described later.
The nozzle plate 52 is a plate-like member in which the plurality of nozzles N are formed, and is provided on the outer surface F1 of the flow path substrate 32 using, for example, an adhesive. Each of the nozzles N is a through-hole through which an ink passes. The nozzle plate 52 of the first embodiment is manufactured by processing a single crystal silicon (Si) base (silicon substrate) using a semiconductor manufacturing technique. However, any known material or any known manufacturing method can be adopted in manufacturing the nozzle plate 52.
The flow path substrate 32 is a plate-like member for forming a flow path of an ink. As illustrated in
The wiring connection substrate 38 of
The case member 40 illustrated in
As illustrated in
An ink supplied from the liquid container 14 to the inlet 43 is stored in the space RB and the space RA of the liquid storing chamber R. The ink stored in the liquid storing chamber R is divided into the plurality of supply flow paths 322 from the intermediate flow paths 326 so as to be supplied to and so as to fill each of the pressure chambers C in parallel.
As illustrated in
The pressure generating unit 35 illustrated in
The pressure chamber substrate 34 is a plate-like member, in which a plurality of openings 342 configuring the pressure chambers C are formed for each of the first line L1 and the second line L2, and is provided on the outer surface F2 of the flow path substrate 32 using, for example, an adhesive. The plurality of openings 342 are arranged in the Y-direction. Each of the openings 342 is a through-hole, which is formed for each of the nozzles N and runs in the X-direction in plan view. The flow path substrate 32 and the pressure chamber substrate 34 are manufactured by processing single crystal silicon (Si) substrates (silicon substrates) using a semiconductor manufacturing technique as in the case of the nozzle plate 52 described above. However, any known material and any known method can be adopted in manufacturing the flow path substrate 32 and the pressure chamber substrate 34. The piezoelectric device 39 is provided on an outer surface of the pressure chamber substrate 34 on a side opposite to the flow path substrate 32.
As illustrated in
On an outer surface of the diaphragm 36 on a side opposite to the pressure chambers C, the plurality of piezoelectric elements 37 corresponding to the different nozzles N are provided for each of the first line L1 and the second line L2 as illustrated in
Each of the piezoelectric elements 37 is a stacked body of which a piezoelectric layer is sandwiched between a first electrode and a second electrode, which face each other. By applying a voltage to an area between the first electrode and the second electrode, a piezoelectric strain occurs in the piezoelectric layer sandwiched between the first electrode and the second electrode and thus the piezoelectric layer is displaced. Therefore, each of the piezoelectric elements 37 is a portion in which the first electrode, the second electrode, and the piezoelectric layer overlap each other. A pressure in each of the pressure chambers C changes by the diaphragm 36 vibrating in tandem with the piezoelectric strain of the piezoelectric layer. An adhesive layer for ensuring adhesion may be provided between the piezoelectric elements 37 and the diaphragm 36. That is, it is not necessary for the piezoelectric elements 37 to be directly provided on the outer surface of the diaphragm 36, and the piezoelectric elements may be provided on the outer surface of the diaphragm 36 via the adhesive layer. Zirconium, a zirconium oxide, titanium, a titanium oxide, and a silicon oxide can be used for the adhesive layer.
As illustrated in
The diaphragm 36 includes active portions 362a that overlap the piezoelectric elements 37 in plan view (seen from the Z-direction), fixed portions 362c that overlap the side walls 344 of the pressure chambers C in plan view, and arm portions 362b between the active portions 362a and the fixed portions 362c. The active portions 362a are portions that vibrate in tandem with piezoelectric strains of piezoelectric layers 373. The arm portions 362b are portions that support the active portions 362a. Each of the vibration regions P is configured of the active portion 362a and the arm portion 362b.
The vibration regions P of the embodiment have the same shape as the pressure chambers C in plan view, and are rectangles each of which has a long axis, which runs in the X-direction, and a short axis, which is shorter than the long axis and runs in the Y-direction. Hereinafter, the long axis of each of the rectangles, which runs in the X-direction, will be set as a long axis Gx of each of the vibration regions P and the short axis of each of the rectangles, which runs in the Y-direction, will be set as a short axis Gy of each of the vibration regions P. The shapes of the vibration regions P may be shapes other than a rectangle such as an ellipse and a diamond. In a case where the vibration regions P have shapes other than a rectangle, a short axis of each of the smallest rectangles which includes one of the vibration regions P is the short axis Gy of the vibration region P and a long axis of the smallest rectangle that includes the vibration region P is the long axis Gx of the vibration region P. A case where the shapes of the vibration regions P match the smallest rectangles that include the vibration regions has been described in the embodiment.
In the piezoelectric device 39 having such a configuration, displacement H in the Z-direction occurs in the active portions 362a of the vibration regions P of the diaphragm 36 due to piezoelectric strains of the piezoelectric elements 37 as illustrated with dotted lines of
In this case, the diaphragm 36 in the direction of the short axis Gy can be made easier to deform in the Z-direction, for example, by aligning each of the short axes Gy of the diaphragm 36 with a direction where a Young's modulus is low in a crystal plane since a Young's modulus of the crystal plane of a silicon base changes according to a direction in the crystal plane. By doing so, it is considered that the displacement properties of the diaphragm 36 can be improved.
However, not only the Young's modulus but also the Poisson's ratio has anisotropy according to a crystal plane of the single crystal silicon base. Moreover, the Poisson's ratio and the Young's modulus are different from each other in terms of how the Poisson's ratio and the Young's modulus change according to a direction in the crystal plane. Therefore, even if a direction of the diaphragm 36 is aligned with a direction in the crystal plane considering only a Young's modulus, a crack is likely to be generated in the diaphragm 36 according to a Poisson's ratio in that direction.
As shown in
As described above, when the diaphragm 36 is deformed due to the piezoelectric elements 37, the diaphragm greatly stretches in the direction of the short axis Gy and the diaphragm contracts accordingly in the direction of the long axis Gx. Although each of the active portions 362a and the vicinity thereof stretch also in the direction of the long axis Gx, other portions (some parts of the arm portions 362b) contract in the direction of the long axis Gx. In this case, if the Poisson's ratio in the direction of the short axis Gy is high, a contracted amount of the portion that contracts in the direction of the long axis Gx is large. Thus, a force pulling the diaphragm 36 in the direction of the long axis Gx is strong. For this reason, stress concentration occurs in some parts (for example, in plan view, a boundary between the diaphragm 36 and the pressure chambers C and a boundary between the diaphragm 36 and the piezoelectric elements 37) of the arm portions 362b that contract in the direction of the long axis Gx and thereby a crack is likely to be generated.
In the embodiment, the Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy is set so as to be included in a range of a minimum value of the Poisson's ratio in the crystal plane inclusive to an average value of the Poisson's ratios in the crystal plane exclusive. The average value may be, for example, an average value calculated by dividing a value, which is obtained by adding a minimum value and a maximum value of the Poisson's ratio in the crystal plane, by 2, or may be an average value calculated by dividing a value, which is obtained by adding a plurality of sampled values of the Poisson's ratio in the crystal plane, by the number of the sampled values. According to such a configuration, a Poisson's ratio in the direction of the short axis Gy, which has an effect on stretching/contracting of the diaphragm 36 in the direction of the long axis Gx, is restricted to be a value that is higher than or equal to the minimum value and is lower than the average value. Therefore, even when the diaphragm 36 is displaced in a direction of stretching due to vibration of the piezoelectric elements 37, a force that the diaphragm 36 contracts in the direction of the long axis Gx is weak compared to a case where the Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy is a high value to an extent to exceed the average value. Thus, a contracted amount in the direction of the long axis Gx is small. Since the contracted amount in the direction of the long axis Gx becomes smaller and a force pulling the diaphragm 36 in the direction of the long axis Gx weakens by making the Poisson's ratio in the direction of the short axis Gy lower as described above, for example, stress concentration of the diaphragm 36 in some parts (for example, in plan view, the boundary between the diaphragm 36 and the pressure chambers C and the boundary between the diaphragm 36 and the piezoelectric elements 37) of the arm portions 362b in the direction of the long axis Gx also is eased. Thus, the generation of a crack in the diaphragm 36 can be suppressed.
Specifically, in the (100) plane of the single crystal silicon base shown in
Such a diaphragm 36 of the first embodiment is manufactured using a single crystal silicon wafer of which the crystal plane is the (100) plane as shown in
As described above, it is most preferable that a Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy of the first embodiment be a minimum value from a perspective of suppressing generation of a crack in the diaphragm 36. Therefore, in a case where the crystal plane of the single crystal silicon base, of which the crystal plane is the (100) plane shown in
There is a case where stretching/contracting of a material stacked on the diaphragm 36 has an effect on the displacement H of the diaphragm 36. For example, since the piezoelectric elements 37 are stacked on the diaphragm 36 in the embodiment, there is a possibility that the displacement H of the diaphragm 36 is affected by the stretching/contracting of the stacked material according to a Poisson's ratio of the material (for example, a material of the first electrode formed on the outer surface of the diaphragm 36) configuring each of the piezoelectric elements 37 in the direction of the short axis Gy. In a case where a zirconia oxide film or a silicon oxide film is formed between each of the piezoelectric elements 37 and the diaphragm 36, there is a possibility that the displacement H of the diaphragm 36 is affected by the stretching/contracting of the stacked material. If a Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy is even lower than a Poisson's ratio of the stacked material, the displacement H of the diaphragm 36 can be made unlikely to be affected by the stretching/contracting of the stacked material.
In the first embodiment, a Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy is preferably 0.1 to 0.2%. When a margin is added thereto, a suitable range can be set to a range of the minimum value inclusive to a value that is 30% higher than the minimum value inclusive. By doing so, the displacement can be made unlikely to be affected by the stacked material on the diaphragm 36. In the single crystal silicon base of which the crystal plane is the (100) plane shown in
The orientation in which the Poisson's ratio is the minimum value in the (100) plane shown in
Although a case where the crystal plane (100) of the single crystal silicon base is the outer surface (top surface) of the diaphragm 36 has been described in the embodiment, the configuration of the embodiment is applicable also to a case where a (010) plane or a (001) plane, which is a crystal plane equivalent to the crystal plane (100), is the outer surface (top surface) of the diaphragm 36 since single crystal silicon has a cubic crystal system. Even when the crystal plane is the (010) plane or the (001) plane, the Poisson's ratio and the Young's modulus are in shapes shown in
A second embodiment of the invention will be described. In each form to be given as an example below, elements, of which operation and functions are the same as in the first embodiment, will be assigned with the same reference signs used in describing the first embodiment and detailed description of each of the elements will be omitted as appropriate. Although a case where the diaphragm 36 is formed of the single crystal silicon base, of which the crystal plane is the (100) plane, is given as an example in the first embodiment, a case where the diaphragm 36 is formed of a single crystal silicon base, of which the crystal plane is a (110) plane (crystal plane orientation perpendicular to the crystal plane is [110]), will be given as an example in the second embodiment.
As shown in
The Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy is set so as to be included in a range of a minimum value of the Poisson's ratio in the crystal plane inclusive to an average value of the Poisson's ratios in the crystal plane exclusive, also in the second embodiment as in the first embodiment. Specifically, in the (110) plane of the single crystal silicon base shown in
According to such a second embodiment, a Poisson's ratio in the direction of the short axis Gy which has an effect on stretching/contracting of the diaphragm 36 in the direction of the long axis Gx is restricted to be a value that is higher than or equal to the minimum value and is lower than the average value, as in the first embodiment. Therefore, even when the diaphragm 36 is displaced in a direction of stretching due to vibration of the piezoelectric elements 37, a force exerted in a direction where the diaphragm 36 contracts, which is a long axis direction, is weak compared to a case where the Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy is a high value to an extent to exceed the average value. Thus, a contracted amount in the direction of the long axis Gx is small. Since the contracted amount in the direction of the long axis Gx becomes smaller and a force pulling the diaphragm 36 in the direction of the long axis Gx weakens by making the Poisson's ratio in the direction of the short axis Gy lower as described above, for example, stress concentration of the diaphragm 36 in some parts (for example, in plan view, the boundary between the diaphragm 36 and the pressure chambers C and the boundary between the diaphragm 36 and the piezoelectric elements 37) of the arm portions 362b in the direction of the long axis Gx also is eased. Thus, the generation of a crack in the diaphragm 36 can be suppressed.
Such a diaphragm 36 of the second embodiment is manufactured using a single crystal silicon wafer of which the crystal plane is the (110) plane as shown in
As described above, it is most preferable that a Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy of the second embodiment be a minimum value from a perspective of suppressing generation of a crack in the diaphragm 36. Therefore, in a case where the crystal plane of the single crystal silicon base of which the crystal plane is the (110) plane shown in
Also in the second embodiment, a Poisson's ratio of the diaphragm 36 in the direction of the short axis Gy is preferably 0.1 to 0.2%. When a margin is added thereto, a suitable range can be set to a range of the minimum value inclusive to a value that is 30% higher than the minimum value inclusive. By doing so, the displacement can be made unlikely to be affected by the stacked material on the diaphragm 36. In the single crystal silicon base of which the crystal plane is the (110) plane shown in
The orientation in which the Poisson's ratio is the minimum value in the (110) plane shown in
Although a case where the crystal plane (110) of the single crystal silicon base is the outer surface (top surface) of the diaphragm 36 has been described in the embodiment, the configuration of the embodiment is applicable also to a case where a (011) plane or a (101) plane, which is a crystal plane equivalent to the crystal plane (110), is the outer surface (top surface) of the diaphragm 36 since single crystal silicon has a cubic crystal system. Even when the crystal plane is the (011) plane or the (101) plane, the Poisson's ratio and the Young's modulus are in shapes shown in
A third embodiment of the invention will be described. A specific configuration example of the piezoelectric elements 37 of the piezoelectric device 39 according to the first embodiment and the second embodiment will be described in the third embodiment.
As illustrated in the sectional view of
The first electrode 371 is separately formed on the outer surface of the diaphragm 36 for each of the piezoelectric elements 37 (for each of the nozzles N). Each of the first electrodes 371 is an electrode that extends in the Y-direction. Each of the first electrodes 371 is connected to the drive IC 62 via each of lead electrodes 371A pulled out to the outside of each of the piezoelectric layers 373. The lead electrodes 371A are electrically connected to each other, and each first electrode 371 is a common electrode for the plurality of piezoelectric elements 37. A material that does not oxidize when forming the piezoelectric layers 373 and can maintain conductivity is preferable as a material of the first electrodes 371. For example, precious metals such as platinum (Pt) and iridium (Ir), or conductive oxides represented by lanthanum nickel oxides (LNO) are suitably used.
On an outer surface (outer surface on a side opposite to the diaphragm 36) of each of the first electrodes 371, the piezoelectric layer 373 and the second electrode 372 are separately formed for each of the piezoelectric elements 37 (for each of the nozzles N). As illustrated in
The piezoelectric layer 373 is formed by being patterned for each of the pressure chambers C. As illustrated in
The piezoelectric layers 373 are made of, for example, a ferroelectric ceramic material showing electromechanical conversion action, such as a crystal film (perovskite type crystal) having a perovskite structure. The material of the piezoelectric layers 373 is not limited to the material described above. For example, in addition to a ferroelectric piezoelectric material, such as lead zirconate titanate (PZT), and a ferroelectric piezoelectric material to which a metal oxide, such as a niobium oxide, a nickel oxide, and a magnesium oxide, is added, non-lead-based piezoelectric materials that do not include lead can be used without being limited to lead-based piezoelectric materials that include lead.
Each of the second electrodes 372 is provided on a surface of each of the piezoelectric layers 373 on a side opposite to each of the first electrodes 371, and configures a separate electrode corresponding to each of the plurality of piezoelectric elements 37. Each of the second electrodes 372 may be directly provided on each of the piezoelectric layers 373, or other members may be sandwiched between the piezoelectric layers 373 and the second electrodes 372. A material that can form an interface between the piezoelectric layer 373 and the material well and can demonstrate insulation properties and piezoelectric properties is desirable for the second electrodes 372. For example, a precious metal material, such as iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), or conductive oxides represented by lanthanum nickel oxides (LNO) is suitably used. The second electrodes 372 may be formed by stacking a plurality of materials.
A case where in the piezoelectric elements 37 of the embodiment, the first electrodes 371 are set as common electrodes for the plurality of piezoelectric elements 37 and the second electrodes 372 are set as separate electrodes corresponding to the plurality of piezoelectric elements 37 is given as an example. Without being limited to the configuration, however, the second electrodes 372 may be set as common electrodes for the plurality of piezoelectric elements 37 and the first electrodes 371 may be set as separate electrodes corresponding to the plurality of piezoelectric elements 37. Although a case where the diaphragm 36 is configured of a single layer is given as an example in the embodiment described above, the diaphragm may be configured of a plurality of layers without being limited thereto.
A case where the pressure chamber substrate 34 and the diaphragm 36 are configured as separate bodies is given as an example in the embodiment described above. Without being limited thereto, however, the pressure chamber substrate 34 and the diaphragm 36 may be integrated so as to form the pressure chambers C and the diaphragm 36 at once, for example, as in a modification example of the third embodiment illustrated in
A fourth embodiment of the invention will be described. Another configuration example of the piezoelectric elements 37 of the piezoelectric device 39 according to the first embodiment and the second embodiment will be described in the fourth embodiment.
As illustrated in
Each of the piezoelectric elements 37 of the fourth embodiment is a stacked body of which the piezoelectric layer 373 is sandwiched between the first electrode 371 and the second electrode 372, which face each other. As in the other embodiments described above, a portion where the first electrode 371, the second electrode 372, and the piezoelectric layer 373 overlap each other in plan view configures each of the piezoelectric elements 37. The first electrode 371 and the piezoelectric layer 373 illustrated in
The second electrode 372 is separately stacked on the first electrode 371 on a side opposite to the diaphragm 36 for each of the piezoelectric elements 37 (for each of the nozzles N). The second electrode 372 is disposed so as to overlap the entire perimeter of each of the inner peripheries 345 of the pressure chambers C in plan view. In plan view, the shape of each of the inner peripheries of the second electrodes 372 is an ellipse and the shape of an outer periphery thereof is a substantially rectangle of which a side in the X-direction is longer than a side in the Y-direction. The diaphragm 36 of the fourth embodiment is the same single crystal silicon base as in the first embodiment and the second embodiment, and is configured so as to be integrated with the pressure chamber substrate 34.
According to the piezoelectric device 39 of the fourth embodiment having such a configuration, a piezoelectric strain and displacement occurs in each of the piezoelectric layers 373 sandwiched between the first electrode 371 and the second electrode 372 by applying a voltage to an area between the first electrode 371 and the second electrode 372. A pressure in each of the pressure chambers C changes by the diaphragm 36 vibrating in tandem with the piezoelectric strain of the piezoelectric layer 373. Also in the fourth embodiment, portions of the diaphragm 36, which overlap the pressure chambers C, are the vibration regions P.
As illustrated in
The forms and the embodiments given as examples above can be variously changed. Examples of forms of specific deformation are given as follows. Any two or more forms selected from the following examples and the forms described above can be combined as appropriate unless the selected forms are inconsistent with each other.
(1) Although a serial head that repeatedly causes the carriage 242, on which the liquid discharging heads 26 are mounted, to reciprocate in the X-direction is given as an example in the embodiments described above, the invention is also applicable to a line head in which the liquid discharging heads 26 are arranged over the entire width of the medium 12.
(2) Although the piezoelectric liquid discharging heads 26, in which the piezoelectric elements mechanically vibrating the pressure chambers are used, are given as an example in the embodiments described above, it is also possible to adopt thermal liquid discharging heads in which heating elements generating bubbles inside the pressure chambers by heating are used.
(3) The liquid discharging apparatus 10 given as an example in the embodiments described above can be adopted in various types of devices such as a facsimile device and a copier, in addition to a device exclusive to printing. The use of the liquid discharging apparatus 10 of the invention is not limited to printing. For example, a liquid discharging apparatus that discharges a color material solution is used as a manufacturing apparatus that forms a color filter of a liquid crystal display device, an organic electroluminescent (EL) display, and a field emission display (FED). A liquid discharging apparatus that discharges a conductive material solution is used as a manufacturing apparatus that forms wiring of a wiring substrate and an electrode. In addition, the liquid discharging apparatus is also used as a chip manufacturing apparatus that discharges a bioorganic solution as a type of a liquid.
Number | Date | Country | Kind |
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2017-105591 | May 2017 | JP | national |