Patent Application
20230072499
The present application claims priority under 35 U.S.C. § 119 to Japanese Patent Application No. 2021-141804 filed on Aug. 31, 2021. The above application is hereby expressly incorporated by reference, in its entirety, into the present application.
The present disclosure relates to a piezoelectric laminate and a piezoelectric element.
As a material having excellent piezoelectric characteristics and excellent ferroelectricity, there is known a perovskite-type oxide such as lead zirconate titanate (Pb(Zr,Ti)O3, hereinafter referred to as PZT). A piezoelectric body consisting of a perovskite-type oxide is applied as a piezoelectric film in a piezoelectric element having a lower electrode, a piezoelectric film, and an upper electrode on a substrate. This piezoelectric element has been developed into various devices such as a memory, an inkjet head (an actuator), a micromirror device, an angular velocity sensor, a gyro sensor, a piezoelectric micromachined ultrasonic transducer (PMUT), and an oscillation power generation device.
The piezoelectric characteristics greatly change due to the excess or deficiency of oxygen in the perovskite structure of the perovskite-type oxide. In particular, in a perovskite-type oxide containing lead (Pb) such as a PZT film, oxygen is easily eliminated, and the oxygen defect in the piezoelectric film easily causes the deterioration of piezoelectric characteristics and the deterioration of durability. In order to suppress the oxygen elimination in the perovskite-type oxide, it is effective to use a conductive oxide such as SRO (SrRuO3) or IrO2 in regions of the lower electrode and the upper electrode, where these regions are in contact with the piezoelectric film. Further, in a case where a conductive oxide is used in the region in contact with the piezoelectric film, a layer of a noble metal such as platinum (Pt) or iridium (Ir) is generally laminated on the conductive oxide layer in order to ensure good conductivity (see, for example, JP2018-085478A).
JP2007-300071A proposes a piezoelectric element having a PZT film, in which a lower electrode layer has a configuration such that an amount of a conductive oxide is large on a side of a substrate and an amount of a conductive metal is large on a side of a piezoelectric film in order to improve the adhesiveness at each interface between the substrate and the lower electrode layer and between the lower electrode layer and the piezoelectric film. Further, it describes that a Pt group is preferable as the conductive metal contained in the lower electrode layer.
On the other hand, JP2011-103327A proposes a piezoelectric element having a first electrode (corresponding to the lower electrode layer) that does not use a Pt group. In JP2011-103327A, a first conductive layer, a first interlayer consisting of a nitride compound, a second interlayer, and a second conductive layer consisting of a conductive oxide are laminated in the lower electrode layer. Here, the first conductive layer is made of one of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Cu, Ag, or Au, or an alloy of two or more thereof, and the second interlayer is made of one of Ti, Zr, W, Ta, Al, or an alloy of two or more thereof. JP2011-103327A describes that in a case where a lower electrode layer having such a laminated structure is provided, it is possible to provide a piezoelectric element having an electrode having excellent conductivity and excellent durability as compared with a case where a platinum group is used.
As described in JP2018-085478A, in a piezoelectric element having a piezoelectric film of a perovskite-type oxide, it is possible to suppress the deterioration of piezoelectric characteristics in a case where a conductive oxide layer is provided on the side of the piezoelectric film of the electrode layer. Further, as described in JP2018-085478A and JP2007-300071A, a noble metal which is a Pt group is generally used in the lower electrode.
However, since a metal of the platinum group is very expensive, it is difficult to sufficiently suppress the manufacturing cost of a piezoelectric element having an electrode containing the platinum group.
In JP2011-103327A, since the platinum group is not used in the lower electrode layer, the lower electrode layer can be constituted at a lower cost as compared with the case where the platinum group is used. However, due to the fact that the electrode layer has a structure of at least four layers and thus the material cost and the manufacturing process are complicated, it cannot be said that the effect of suppressing the manufacturing cost is sufficient yet.
The present disclosed technology has been made in consideration of the above circumstances, and an object of the present disclosed technology is to provide a piezoelectric laminate and a piezoelectric element, which makes it possible to suppress the deterioration of piezoelectric characteristics and suppress the manufacturing cost as compared with the conventional case.
The piezoelectric laminate of the present disclosure is a piezoelectric laminate comprising, on a substrate in the following order:
a lower electrode layer; and
a piezoelectric film containing a perovskite-type oxide,
in which the lower electrode layer contains a tantalum (Ta) element, contains a Ta nitride on a side closest to the piezoelectric film in a thickness direction of the lower electrode layer, includes a region where a content of the Ta element changes in the thickness direction, and in the region where the content of the Ta element changes, includes a region where the content of the Ta element increases from the side of the piezoelectric film toward the side of the substrate, and
the change in the content of the Ta element in the thickness direction is continuous.
In the piezoelectric laminate of the present disclosure, it is preferable that the content of the Ta element in the thickness direction of the lower electrode layer exhibits the maximum value on the side closest to the substrate and continuously increases to the maximum value from the side of the piezoelectric film to the side of the substrate.
In the piezoelectric laminate of the present disclosure, the lower electrode layer preferably contains the Ta nitride in a range of 20 nm to 60 nm from the side closest to the piezoelectric film.
In the piezoelectric laminate of the present disclosure, it is preferable that an alignment control layer containing a metal oxide is provided between the lower electrode layer and the piezoelectric film. In this case, the metal oxide preferably contains at least one of Sr or Ba.
In the piezoelectric laminate of the present disclosure, it is preferable that the perovskite-type oxide contains Pb, zircon (Zr), titanium (Ti), and O (oxygen).
In the piezoelectric laminate of the present disclosure, it is preferable that the perovskite-type oxide contains niobium (Nb).
In the piezoelectric laminate of the present disclosure, it is preferable that the perovskite-type oxide is a compound represented by General Formula (1).
Pb{(ZrxTi1-x)y-1Nby}O3 (1)
0<x<1, 0.1≤y≤0.4
The piezoelectric element of the present disclosure comprises the piezoelectric laminate of the present disclosure; and
an upper electrode layer provided on the piezoelectric film of the piezoelectric laminate.
According to the piezoelectric laminate and the piezoelectric element of the present disclosure, it is possible to provide a piezoelectric laminate and a piezoelectric element, which makes it possible to suppress the deterioration of piezoelectric characteristics and suppress the manufacturing cost as compared with the conventional case.
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings below, the layer thickness of each of the layers and the ratio therebetween are appropriately changed and drawn for easy visibility, and thus they do not necessarily reflect the actual layer thickness and ratio.
Piezoelectric Laminate 5 and Piezoelectric Element 1, According to First Embodiment
In the piezoelectric laminate 5, the lower electrode layer 12 contains a Ta element, and it contains a Ta nitride (TaN) on the side closest to the piezoelectric film 15 in the thickness direction of the lower electrode layer 12. Further, as will be described in detail later, the lower electrode layer 12 includes a region where the content of the Ta element changes in the thickness direction, and the change in the content of the Ta element in the thickness direction is continuous. Further, the change in the content of the Ta element in the thickness direction of the lower electrode layer 12 is continuous. Here, “the content of the Ta element in the thickness direction” is a proportion of the Ta element with respect to all elements at each position in the thickness direction, and it is indicated in the unit of at %. The “thickness direction” is a direction perpendicular to the substrate 10. “The change in the content is continuous” means that there are no discontinuous portions in the content profile in the thickness direction (see
The enlarged view in
In the piezoelectric laminate 5 and the piezoelectric element 1 according to the present embodiment, the lower electrode layer 12 has a first region 12b containing a Ta nitride and a second region 12c consisting of Ta metal, provided on the first region 12b side from the substrate 10. The first region 12b includes the boundary 12a with respect to the piezoelectric film 15, which is on the side closest to the piezoelectric film 15.
As shown in
The content of the element in the lower electrode layer 12 can be measured by the secondary ion mass spectrometry (SIMS) analysis, and in the present disclosure, the content of the element is a value measured according to SIMS. Further, since the content fluctuates by about ±5 at % due to noise in the actual measurement data, the fluctuation of about ±5 at % is regarded as the range of measurement error.
In the present embodiment, the lower electrode layer 12 is composed of Ta and nitrogen (N) (however, it contains unavoidable impurities), and in the thickness direction of the first region 12b of the lower electrode layer 12, the profile that shows the change in the content of the N element is symmetrical with the profile that shows the change in the content of the Ta element, with the line of the content of 50 at % being as the axis of symmetry. That is, the content of the N element continuously decreases from the boundary 12a, which is on the side closest to the piezoelectric film 15, toward the side of the second region 12c, and then exhibits a constant value of almost 0 at %. It is noted that the region (the first region 12b in this example) containing a Ta nitride, which includes, in the lower electrode layer 12, the side closest to the piezoelectric film 15, may contain a Ta oxynitride (TaON). In a case where the lower electrode layer 12 contains TaON, the profile of the N element is, of course, different from that shown in
In the present embodiment, an example is shown in which almost the whole Ta is nitrided at the boundary 12a of the lower electrode layer 12 with respect to the piezoelectric film 15. However, at the boundary 12a, the nitrided Ta and the non-nitrided Ta may be in a state of being mixed. However, it is preferable that 20 at % or more of the Ta present at the boundary 12a is nitrided, and it is more preferable that 30 at % or more thereof is nitrided. Further, it is preferable that 20 at % or more of the Ta element is present as a nitride in the entire first region 12b.
The thickness t of the lower electrode layer 12 is preferably about 50 nm to 300 nm and more preferably 100 nm to 300 nm. The lower electrode layer 12 contains a Ta nitride at least on the side closest to the piezoelectric film 15. However, it preferably contains a Ta nitride in a range of 20 nm or more from the side of the piezoelectric film 15, and more preferably contains a Ta nitride in a range of 30 nm or more from the side closest to the piezoelectric film 15. In order to ensure sufficient conductivity without the thickness t of the lower electrode layer 12 becoming too thick, the range containing the Ta nitride is preferably 60 nm or less from the side closest to the piezoelectric film 15. That is, it is preferable to contain a Ta nitride over 20 nm to 60 nm, and it is particularly preferable to contain a Ta nitride over 40 nm to 60 nm from the side closest to the piezoelectric film 15, in the lower electrode layer 12. In the case of the present embodiment, the thickness t1 of the first region 12b is preferably 20 nm to 60 nm, more preferably 30 nm to 60 nm, and particularly preferably 40 nm to 60 nm. Further, in a case where the lower electrode layer 12 has the first region 12b and the second region 12c as in this example, the thickness t2 of the second region 12c is preferably 50 nm to 200 nm and more preferably 80 nm to 150 nm. The thickness of the lower electrode layer 12 can be estimated from a scanning electron microscope (SEM) image of a cross section and a transmission electron microscope (TEM) or secondary ion mass spectrometry (SIMS) analysis. However, the content of the Ta element continuously changes between the region where the content of the Ta element changes (here, the first region 12b) and the region (here, the second region 12c) where the content of the Ta element does not change, and thus the boundary between the two regions is not clear, for example, in a scanning electron microscopic image. For this reason, the respective thicknesses t1 and t2 of the first region 12b and the second region 12c are determined from the composition distribution in the thickness direction of the lower electrode layer 12 (see
The piezoelectric film 15 contains a perovskite-type oxide. It is preferable that the piezoelectric film 15 is occupied by 80% by mole or more of the perovskite-type oxide. Further, it is preferable that the piezoelectric film 15 is consisting of a perovskite-type oxide (however, it contains unavoidable impurities).
The perovskite-type oxide is represented by the general formula ABO3.
In the general formula, A is an A-site element, which is one of Pb, barium (Ba), lanthanum (La), Sr, bismuth (Bi), lithium (Li), sodium (Na), calcium (Ca), cadmium (Cd), magnesium (Mg), or potassium (K), or a combination of two or more thereof.
In the general formula, B is a B-site element, which is one of Ti, Zr, vanadium (V), Nb, Ta, chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), iron (Fe), Ru, cobalt (Co), Ir, nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), In, Sn, antimony (Sb), or a lanthanide element, or a combination of two or more thereof.
In the general formula, O is oxygen.
Regarding A:B:O, a reference ratio thereof is 1:1:3; however, it suffices that the ratio is in a range in which a perovskite structure is obtained.
It is particularly preferable that the piezoelectric film 15 contains Pb as the main component of the A site. It is noted that in the present specification, “the main component” means a component of which the occupation is 50% by mole or more. That is, “contains Pb as the main component of the A site” means that the component having 50% by mole or more among the A site elements is Pb. In the perovskite-type oxide containing Pb, the elements in the A site other than Pb and the elements of the B site are not particularly limited.
The perovskite-type oxide is preferably a lead zirconate titanate (PZT) type that contains lead (Pb), zirconium (Zr), titanium (Ti), and oxygen (O).
In particular, it is preferable that the perovskite-type oxide is a compound represented by General Formula (P), which contains an additive B1 in the B site of PZT.
Pb{(ZrxTi1-x)1-yB1y}O3 (P)
Here, 0<x<1 and 0<y<0.3 are satisfied. It is noted that regarding Pb:{(ZrxTi1-x)1-yBy}:O in General Formula (P), a reference ratio thereof is 1:1:3; however, it suffices that the ratio is in a range in which a perovskite structure is obtained.
Examples of the B1 include scandium (Sc), V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ir, Ni, Cu, Zn, Ga, In, Sn, and Sb. It is preferable to contain one or more elements among these elements. B1 is more preferably any one of Sc, Nb, or Ni.
In particular, it is preferable that B1 is Nb and that the perovskite-type oxide contains Nb. A compound represented by General Formula (1) is particularly preferable.
Pb{(ZrxTi1-x)y-1Nby}O3 (1)
0<x<1, 0.1≤y≤0.4
The film thickness of the piezoelectric film 15 is not particularly limited, and it is generally 200 nm or more, for example, 0.2 μm to 5 μm. The film thickness of the piezoelectric film 15 is preferably 1 μm or more.
The substrate 10 is not particularly limited, and examples thereof include substrates such as silicon, glass, stainless steel, yttrium-stabilized zirconia, alumina, sapphire, and silicon carbide. As the substrate 10, a laminated substrate having a SiO2 oxide film formed on the surface of the silicon substrate may be used.
The upper electrode layer 18 is paired with the lower electrode layer 12 and is an electrode for applying a voltage to the piezoelectric film 15. The main component of the upper electrode layer 18 is not particularly limited, and examples thereof include metals such as gold (Au), platinum (Pt), iridium (Ir), ruthenium (Ru), titanium (Ti), molybdenum (Mo), tantalum (Ta), aluminum (Al), copper (Cu), silver (Ag), chromium (Cr), such as zinc (Zr), and metal oxides thereof, as well as combinations thereof. Further, as the upper electrode layer 18, indium tin oxide (ITO), IGZO, LaNiO3, SRO (which may contain Ba), or the like may be used. The upper electrode layer 18 may be a single layer or may have a laminated structure composed of a plurality of layers. It is noted that from the viewpoint of suppressing oxygen diffusion from the piezoelectric film 15, at least a region of the upper electrode layer 18, which is in contact with the piezoelectric film, is preferably an oxide electrode.
The layer thickness of the upper electrode layer 18 is not particularly limited, and it is preferably about 50 nm to 300 nm and more preferably 100 nm to 300 nm.
As described above, in the piezoelectric laminate 5 and the piezoelectric element 1 according to the present embodiment, the lower electrode layer 12 contains a Ta element and contains a Ta nitride on the side closest to the piezoelectric film 15 in the thickness direction. In a case where the region in the lower electrode layer 12 on the side closest to the piezoelectric film 15 is a metal layer, oxygen in the piezoelectric film 15 may leak and migrate to the side of the lower electrode layer 12, thereby oxidizing the metal of the lower electrode layer 12. Further, in a case of carrying out the film formation of the piezoelectric film 15 on the lower electrode layer 12, oxygen remaining in the atmosphere may be incorporated into the surface of the lower electrode layer 12, whereby the metal on the surface layer of the lower electrode layer 12 is oxidized. In particular, in a case where the metal is Ta, Ta is oxidized to form Ta2O5, which is an insulator, and thus the conductivity is significantly deteriorated. In a case where an insulating layer is formed in the boundary region in the lower electrode layer 12 on the side of the piezoelectric film 15, the performance as an electrode is deteriorated, and the performance (piezoelectric characteristics) of the piezoelectric element 1 is deteriorated. However, since the piezoelectric laminate 5 and the piezoelectric element 1 according to the present embodiment contain a Ta nitride on the side closest to the piezoelectric film 15, the oxidation of Ta is suppressed, and as a result, the deterioration of piezoelectric characteristics can be suppressed. Further, since the oxygen element hardly leaks from the piezoelectric film 15, the effect of improving long-term stability can be obtained. It is noted that even in a case where the Ta nitride is partially oxidized to become a Ta oxynitride (TaON), the Ta oxynitride is not an insulator, and thus the deterioration of the function of the lower electrode layer 12 is small as compared with the case where Ta2O5 is formed.
Further, the lower electrode layer 12 includes a region (here, the first region 12b) where the content of the Ta element changes in the thickness direction, and the change in the content of the Ta element in the thickness direction is continuous. In a case where the change in the content of the Ta element in the thickness direction is discontinuous, the adhesiveness may be deteriorated at the discontinuous portion, whereby peeling may occur. However, in the present embodiment, the change in the content of the Ta element in the lower electrode layer 12 is continuous, and thus the occurrence of peeling can be suppressed.
Further, since Ta is used as a metal species of the lower electrode layer 12, the cost can be significantly reduced as compared with the piezoelectric element in the related art, in which a metal of the Pt group has been used as the main component.
Further, in the present embodiment, the change in the content of the Ta element in the lower electrode layer 12 is in an increasing trend from the side of the piezoelectric film toward the side of the substrate. In the region in the lower electrode layer 12 on the side closest to the piezoelectric film 15, the closer the content ratio of Ta to N is to that of TaN, that is, 1:1, which is the stoichiometric ratio in the Ta nitride, the higher the effect of suppressing oxidation is. On the other hand, the higher the proportion of the non-nitrided metal Ta in the lower electrode layer 12 is, the higher the conductivity is, and the higher the functionality is as the lower electrode layer 12. As a result, in a case where the content of the Ta element is in an increasing trend from the side of the piezoelectric film 15 toward the substrate 10 as in the present embodiment, the effect of suppressing the generation of the oxygen defect in the piezoelectric film 15 can be enhanced, and the effect of suppressing the deterioration of conductivity can be suppressed.
Furthermore, in the piezoelectric laminate 5 and the piezoelectric element 1 according to the above embodiment, in the region where the content of the Ta element of the lower electrode layer 12 changes, the content of the Ta element exhibits the maximum value on the side closest to the substrate 10 in the thickness direction and monotonically increases from the side of the piezoelectric film 15. According to this configuration, it is possible to enhance the effect of suppressing the migration of oxygen from the piezoelectric film 15 to the lower electrode layer 12 and the effect of suppressing the deterioration of conductivity.
In a case where the lower electrode layer 12 contains a Ta nitride in a range of 20 nm to 60 nm from the side closest to the piezoelectric film 15, it is possible to further enhance the effect of suppressing the oxygen migration from the piezoelectric film 15 to the lower electrode layer 12 and suppress the deterioration of piezoelectric characteristics.
In the above embodiment, although the metal species contained in the lower electrode layer 12 is only Ta, a metal species other than Ta may be contained. Examples of the metal element other than the Ta element include Cu, Al, Ti, Ni, Cr, and Fe. Further, the lower electrode layer 12 may contain C or Si. However, in a case of forming the lower electrode layer 12 only with Ta element and N element, it is possible to reduce the number of kinds of materials and simplify the manufacturing method as well, and thus the effect of cost reduction is high.
As described above, in the piezoelectric laminate 5 and the piezoelectric element 1 according to the above embodiment, the lower electrode layer 12 has the first region 12b where the Ta element continuously increases from the side of the piezoelectric film 15 toward the side of the substrate 10 and the second region 12c consisting of the Ta metal, where the change in the content of the Ta element is as shown in
As shown in the profile a of
In addition, as shown in the profile b of
In the embodiment and profiles a and b, which are described above, the content of the Ta element is substantially 50 at % in the lower electrode layer 12 on the side closest to the piezoelectric film 15. In a case where the lower electrode layer 12 is composed of Ta and N, the content of the Ta element is 50 at %, and the content of the N element is 50 at % in a case where the Ta element is completely nitrided at the boundary 12a on the side of the piezoelectric film 15. In this case, the non-nitrided Ta element is not present, and thus the effect of suppressing oxidation due to oxygen in the piezoelectric film 15 is high.
However, as shown in the profile c of
In any one of the profiles a to d, the lower electrode layer 12 contains a Ta element, and it contains a Ta nitride on the side closest to the piezoelectric film 15 in the thickness direction of the lower electrode layer 12. Further, it includes a region where the content of the Ta element changes in the thickness direction, and the change in the content of the Ta element in the thickness direction is continuous. In any case, the Ta nitride is contained on the side closest to the piezoelectric film 15, and thus oxidation is suppressed and the deterioration of piezoelectric characteristics can be suppressed. Further, since the oxygen element hardly leaks from the piezoelectric film 15, the effect of improving long-term stability can be obtained. Further, since the change in the content of the Ta element in the lower electrode layer 12 is continuous, the occurrence of peeling can be suppressed. Furthermore, since Ta is used as a metal species of the lower electrode layer 12, the cost can be significantly reduced as compared with the piezoelectric element in the related art, in which a metal of the Pt group has been used as the main component.
In addition, regarding the profiles a to c, the change in the content of the Ta element in the thickness direction is in increasing trend, the effect of suppressing oxidation on the side of the piezoelectric film is obtained, and the effect of suppressing the deterioration of conductivity is obtained as well.
Piezoelectric Laminate 5A and Piezoelectric Element 1A of Second Embodiment
As illustrated in
The intimate attachment layer 11 is provided for improving the adhesiveness between the substrate 10 and the lower electrode layer 12 and suppressing peeling. For the intimate attachment layer 11, Ti, W, TiW, or the like is preferably used.
The alignment control layer 13 is formed on the lower electrode layer 12. The alignment control layer 13 is a layer provided for suppressing the generation of a pyrochlore phase that is easily formed at the initial stage of film formation of the piezoelectric film 15 and obtaining a good perovskite-type oxide. The alignment control layer 13 contains a metal oxide. The metal oxide preferably contains at least one of Sr or Ba.
Further, as the alignment control layer 13, it is preferable to use, for example, the growth control layer described in WO2020/250591A, WO2020/250632A, JP2020-202327A, or the like.
That is, the alignment control layer 13 preferably contains a metal oxide represented by General Formula (2).
MadMb1-dOe (2)
Ma is one or more metal elements that can be replaced with the metal in the A site of the perovskite-type oxide.
Mb consists of metal species that can be replaced with the metal in the B site of the perovskite-type oxide, where the main component thereof is one of Sc, Zr, V, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Ir, Ni, Cu, Zn, Cd, Ga, In, or Sb.
O is an oxygen element.
In addition, here, each of d and e indicates a composition ratio, and 0<d<1 and e change depending on the valences of Ma and Mb.
Specific examples of the substance of the alignment control layer 13 include BaRuO3 and SrRuO3.
The thickness of the alignment control layer 13 is preferably 2 nm or more and 20 nm or less and more preferably about 10 nm.
Also in the piezoelectric laminate 5A and the piezoelectric element 1A according to the present embodiment, the configuration of the lower electrode layer 12 is the same as that in the piezoelectric laminate 5 and the piezoelectric element 1 according to the first embodiment. That is, the lower electrode layer 12 contains a Ta element, contains a Ta nitride on the side closest to the piezoelectric film 15 in the thickness direction of the lower electrode layer 12, and includes a region where the content of the Ta element changes in the thickness direction, and the change in the content of the Ta element in the thickness direction is continuous. Since Ta nitride is contained on the side closest to the piezoelectric film 15, oxidation is suppressed and the deterioration of piezoelectric characteristics can be suppressed. Further, since the oxygen element hardly leaks from the piezoelectric film 15, the effect of improving long-term stability can be obtained. Since the change in the content of the Ta element in the lower electrode layer 12 is continuous, the occurrence of peeling can be suppressed. Furthermore, since Ta is used as a metal species of the lower electrode layer 12, the cost can be significantly reduced as compared with the piezoelectric element in the related art, in which a metal of the Pt group has been used as the main component.
Further, the piezoelectric laminate 5A and the piezoelectric element 1A according to the present embodiment have the alignment control layer 13, and the piezoelectric film 15 is formed on the alignment control layer 13. As a result, it is possible to suppress the generation of the pyrochlore phase that is easily formed at the initial stage of film formation. Since the generation of the pyrochlore phase at the interface of the piezoelectric film 15 on side of the lower electrode layer 12 can be suppressed, the piezoelectric characteristics of the piezoelectric film 15 are good, and thus it is possible to obtain a high piezoelectric constant and high piezoelectricity as compared with a case where the alignment control layer 13 is not present.
The piezoelectric elements 1 and 1A or the piezoelectric laminates 5 and 5A according to each of the above embodiments can be applied to an ultrasonic device, a mirror device, a sensor, a memory, and the like.
Hereinafter, specific examples and comparative examples of the piezoelectric element of the present disclosure will be described. First, a manufacturing method for a piezoelectric element of each example will be described. It is noted that the conditions other than the configuration of the lower electrode layer and the presence or absence of the alignment control layer are common in each example. In addition, a radio frequency (RF) sputtering device was used for the film formation of each layer.
Manufacturing Method
Substrate
A 6-inch Si wafer attached with a thermal oxide film was used as the substrate.
Lower Electrode Layer
A lower electrode layer was formed on the thermal oxide film of the substrate. The film formation conditions for the lower electrode layer in each example were as follows. The back pressure [Pa] and the film formation temperature in each example were set as shown in Table 1.
Before the film formation of the lower electrode layer, a film of 20 nm of TiW was formed on the thermal oxide film of the substrate as an intimate attachment layer. Then, a film of 150 nm of Ir was formed on the TiW layer as the lower electrode layer under the conditions of an Ar gas of 60 sccm, an RF electric power of 300 W, and a film formation pressure of 0.25 Pa.
A film of 150 nm of Ta was formed on the thermal oxide film of the substrate under the conditions of an Ar gas of 60 sccm, an RF electric power of 300 W, and a film formation pressure of 0.25 Pa. In Comparative Example 1, the lower electrode layer was a single layer of a Ta metal layer.
A film of 100 nm of Ta was formed on the thermal oxide film of the substrate under the conditions of an Ar gas of 60 sccm, an RF electric power of 300 W, and a film formation pressure of 0.25 Pa. Subsequently, a film of 50 nm of a Ta nitride was formed on the Ta layer under the conditions of an Ar gas of 30 sccm, a N2 gas of 30 sccm, an RF electric power of 300 W, and a film formation pressure of 0.25 Pa. That is, in Comparative Example 2, the lower electrode layer had a two-layer structure of a Ta metal layer and a Ta nitride layer having a constant composition provided on an upper layer of the Ta metal layer.
A film of 100 nm of Ta was formed under the conditions of an Ar gas of 60 sccm, an RF electric power of 300 W, and a film formation pressure of 0.25 Pa. Subsequently, for each example, a film of a Ta nitride was formed to have the thickness shown in Table 1 under the conditions of an RF electric power of 300 W and a film formation pressure of 0.25 Pa, while gradually reducing the Ar gas from 60 sccm to 30 sccm and at the same time gradually increasing the N2 gas from 0 sccm to 30 sccm. In a case where after the film formation of the Ta metal layer, a film of a Ta nitride is formed by continuously changing the flow amounts of the Ar gas and the N2 gas, the content of the Ta element gradually increases from the surface toward the metal layer, which makes it possible to form a film of a Ta nitride layer in which the content of the N element gradually decreases (see
Alignment Control Layer
In Example 3, Ar was allowed to flow on the lower electrode layer so that the substrate temperature was 500° C. and the film formation pressure was 0.8 Pa, and then a film of 10 nm of BaRuO3 was formed as the alignment control layer.
In Example 4, Ar was allowed to flow on the lower electrode layer so that the substrate temperature was 500° C. and the film formation pressure was 0.8 Pa, and then a film of 10 nm of SrRuO3 was formed as the alignment control layer.
It is noted that the alignment control layer is not provided in other examples, the reference example and the comparative examples.
Piezoelectric Film
An Nb-doped PZT film having a thickness of 2 μm was formed as the piezoelectric film on the lower electrode layer or the alignment control layer with a radio frequency (RF) sputter. The substrate temperature at the time of film formation was set to 550° C., and the 02 gas flow rate ratio in the sputtering gas was set to 3% with respect to the Ar gas. In addition, the RF electric power was set to 1 kW.
A laminated substrate in which a lower electrode and a piezoelectric film were laminated on the substrate was obtained as described above. It is noted that regarding the laminated substrates of each example and comparative example, a diffraction pattern due to X-ray diffraction was acquired by an X-ray diffractometer manufactured by Malvern Panalytical, whereby it was confirmed that the piezoelectric film has a perovskite type structure.
Upper Electrode Layer
An ITO layer having a thickness of 100 nm was formed on the piezoelectric film of the above-described laminated substrate with a sputter.
Measurement of Element Distribution in Lower Electrode Layer
The element distribution in the thickness direction of the lower electrode layer can be measured according to a secondary ion mass spectrometry (SIMS) analysis. As an example, the data obtained according to the SIMS analysis using a sample having the lower electrode layer of Example 2 is shown in
In
Measurement of Dielectric Constant
Preparation of Measurement Sample
The laminated substrate was subjected to dicing processing to a size of an one-inch (25 mm) square to produce a piezoelectric laminate of an one-inch square. It is noted that at the time of film formation of the upper electrode layer, a metal mask partially having a circular opening having a diameter of 400 μm was used to form a circular upper electrode layer having a diameter of 400 sm. Then, an one-inch square in which a circular upper electrode layer was provided at the center was cut out and used as a sample for dielectric constant measurement.
Measurement
An impedance analyzer manufactured by Agilent Technologies, Inc. was used to measure the dielectric constant. An alternating current voltage having a frequency of 1 kHz was applied to the piezoelectric element of each example, and the dielectric constant was calculated from the measured impedance value. The obtained dielectric constants are shown in Table 1.
Measurement of Piezoelectric Constant
Preparation of Measurement Sample
A strip-shaped portion having a size of 2 mm×25 mm was cut out from the laminated substrate to produce a cantilever.
Measurement
According to the method described in I. Kanno et. al. Sensor and Actuator A 107 (2003) 68, the piezoelectric constant was measured using the cantilever, by using an applied voltage of a sine wave of −10 V±10 V, that is, a bias voltage of −10 V and an applied voltage of a sine wave having an amplitude of 10V, and the obtained results thereof are shown in Table 1.
Table 1 summarizes the piezoelectric element configurations and evaluations of the respective examples. The reference example is a piezoelectric element having a lower electrode layer consisting of Ir, which has been used in the related art, and it is an example in which the dielectric constant and the piezoelectric constant are good. In Table 1, the ratios of the dielectric constant and the piezoelectric constant for each example and comparative example to the value of the reference example are shown together.
As in Comparative Example 1, in a case where the lower electrode layer is a Ta metal layer, the dielectric constant is low by 20% and the piezoelectric constant is low by 15% as compared with the reference example having an Ir metal layer as the lower electrode layer. Comparative Example 2 has, as a lower electrode layer, the second region consisting of Ta and the first region consisting of a Ta nitride, and the first region has a substantially constant composition in the thickness direction. As a result, in Comparative Example 2, the content of the Ta element is discontinuous at the boundary between the first region and the second region. In the element of Comparative Example 2, peeling occurred, and thus the dielectric constant and the piezoelectric constant could not be measured.
In the piezoelectric elements of Examples 1 to 6, peeling did not occur, and thus it was possible to measure the dielectric constant and the piezoelectric constant. This is conceived to be because the change in the content of the Ta element in the thickness direction of the lower electrode layer is continuous.
It is revealed that in the piezoelectric elements of Examples 1 to 6, the dielectric constant and the piezoelectric constant are reduced by only 5% or less as compared with the reference example, and thus a good dielectric constant and a good piezoelectric constant are provided. In particular, in Examples 3 and 4 having the alignment control layer, it is possible to obtain a dielectric constant and a piezoelectric constant which are comparable to those of the case where the Ir electrode layer is provided. In Examples 1 to 6, only Ta is used as the metal species in the lower electrode layer, and thus the material cost can be significantly suppressed as compared with the piezoelectric element using Ir in the related art. It is revealed that as shown in Examples 1 to 6, according to the present disclosed technology, it is possible to provide a piezoelectric element that exhibits piezoelectric characteristics comparable to those of the piezoelectric element in the related art using Ir in the lower electrode layer, and with which the manufacturing cost can be significantly reduced.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-141804 | Aug 2021 | JP | national |
