Piezoelectric MEMS switch and method of fabricating the same

Abstract

A piezoelectric Micro Electro Mechanical System (MEMS) switch includes a substrate, first and second fixed signal lines symmetrically formed in a spaced-apart relation to each other on the substrate to have a predetermined gap therebetween, a piezoelectric actuator disposed in alignment with the first and the second fixed signal lines in the predetermined gap, and having a first end supported on the substrate to allow the piezoelectric actuator to be movable up and down, and a movable signal line having a first end connected to one of the first and the second fixed signal lines, and a second end configured to be in contact with, or separate from the other of the first and second fixed signal lines, the movable signal line at least one side thereof being connected to an upper surface of the piezoelectric actuator.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above aspects and features of the present invention will be more apparent from the description for exemplary embodiments of the present invention taken with reference to the accompanying drawings, in which:

FIG. 1 is a top plan view exemplifying a structure of conventional MEMS switch using a piezoelectric actuator;

FIG. 2 is a top plan view exemplifying a piezoelectric MEMS switch in accordance with an exemplary embodiment of the present invention;

FIG. 3A is a cross-sectional view taken along line I-I′ of FIG. 2;

FIG. 3B is a cross-sectional view exemplifying the piezoelectric MEMS switch of FIG. 3A when it is operated;

FIG. 4 is a cross-sectional view taken along line II-II′ of FIG. 2;

FIG. 5 is a cross-sectional view taken along line III-III′ of FIG. 2; and

FIGS. 6A through 6J are views exemplifying a process of fabricating the piezoelectric MEMS switch in accordance with the exemplary embodiment of the present invention.

Claims

1. A piezoelectric Micro Electro Mechanical System (MEMS) switch comprising: a substrate;first and second fixed signal lines symmetrically formed in a spaced-apart relation to each other on the substrate to have a predetermined gap therebetween;a piezoelectric actuator disposed in alignment with the first and the second fixed signal lines in the predetermined gap, and comprising a first end supported on the substrate to allow the piezoelectric actuator to be movable up and down; anda movable signal line comprising a first end connected to one of the first and the second fixed signal lines, and a second end configured to be in contact with, or separate from the other of the first and second fixed signal lines, the movable signal line at least one side thereof being connected to an upper surface of the piezoelectric actuator.

2. The piezoelectric MEMS switch as claimed in claim 1, wherein the substrate has a first cavity formed below the predetermined gap to allow the piezoelectric actuator to be movable down.

3. The piezoelectric MEMS switch as claimed in claim 2, wherein the substrate has a second cavity formed at a side of the first cavity to waft a first end of the one of the first and the second fixed signal lines.

4. The piezoelectric MEMS switch as claimed in claim 3, wherein the movable signal line comprises: a first support which supports the first end of the movable signal line in a spaced-apart relation from the piezoelectric actuator, the first support being in contact with the first end of the one of the first and the second fixed signal lines wafted by the second cavity;a second support which supports the second end of the movable signal line in a spaced-apart relation from and on the upper surface of the piezoelectric actuator; anda contact which is extended from the second end of the movable signal line and selectively comes in contact with the other of the first and the second fixed signal lines.

5. The piezoelectric MEMS switch as claimed in claim 1, wherein the piezoelectric actuator comprises: a lower electrode layer;a piezoelectric layer formed on the lower electrode layer;an upper electrode layer formed on the piezoelectric layer; anda rigid layer formed on the upper electrode layer.

6. The piezoelectric MEMS switch as claimed in claim 5, wherein the piezoelectric actuator further comprises a plurality of slits formed in a longitudinal direction of the first and the second fixed signal lines.

7. The piezoelectric MEMS switch as claimed in claim 5, further comprising a driving voltage supplying unit which supplies a driving voltage to the upper and the lower electrode layers.

8. The piezoelectric MEMS switch as claimed in claim 7, wherein the driving voltage supplying unit comprises: a lower electrode driving voltage pad which is disposed at a side of the substrate and connected to the lower electrode layer of the piezoelectric actuator;an upper electrode driving voltage pad which is disposed at a side of the piezoelectric actuator and supplies a voltage to the upper electrode layer of the piezoelectric actuator; anda connecting pad which connects the upper electrode driving voltage pad to the upper electrode layer of the piezoelectric actuator.

9. The piezoelectric MEMS switch as claimed in claim 8, wherein at least one the lower electrode driving voltage pad and the upper electrode driving voltage pad comprises a same four layers of the piezoelectric actuator.

10. The piezoelectric MEMS switch as claimed in claim 1, wherein the movable signal line is formed such that a thickness of the movable signal line is greater than a thickness of the first or second fixed signal line.

11. A method of fabricating a piezoelectric Micro Electro Mechanical System (MEMS) switch comprising: forming first and second cavities at a substrate;forming a first sacrificing layer in the first and the second cavities of the substrate;forming first and second fixed signal lines, the first fixed signal line being disposed at a side of the first cavity and the second fixed signal line being disposed symmetrically to the first fixed signal line and having a first end disposed above the second cavity;forming a piezoelectric actuator in alignment with the first and the second fixed signal lines above the first cavity; andforming a movable signal line which comes in contact with and is connected to the piezoelectric actuator and a first end of the first or the second fixed signal line.

12. The method as claimed in claim 11, wherein the forming a piezoelectric actuator comprises: forming a lower electrode layer, a piezoelectric layer, an upper electrode layer, and a rigid layer in turn on the substrate, wherein the first sacrificing layer is formed in the first cavity; andetching the lower electrode layer, the piezoelectric layer, the upper electrode layer, and the rigid layer in turn from above in a pattern of the piezoelectric actuator.

13. The method as claimed in claim 11, wherein the forming a movable signal line comprises: forming a second sacrificing layer on the piezoelectric actuator and the first and the second fixed signal lines;forming contact holes which expose a portion of the piezoelectric actuator and the second fixed signal line;forming a plating seed layer on the second sacrificing layer and in the contact holes;forming a third sacrificing layer on the plating seed layer;forming a movable signal line cavity which exposes a portion of the plating seed layer;plating the exposed portion of the plating seed layer which forms a movable signal line;removing the third sacrificing layer and the plating seed layer layered below the third sacrificing layer;removing the second sacrificing layer; andremoving the first sacrificing layer filled in the first and the second cavities.

14. The method as claimed in claim 12, wherein the pattern of piezoelectric actuator further comprises a plurality of slits formed in a longitudinal direction of the first and the second signal lines.

15. The method as claimed in claim 12, wherein the forming a piezoelectric actuator further comprises forming a driving voltage supplying unit which supplies a driving voltage to the lower electrode layer and the upper electrode layer.

16. The method as claimed in claim 15, wherein the forming a piezoelectric actuator comprises: forming a lower electrode layer, a piezoelectric layer, and an upper electrode layer in turn on the substrate, wherein the first sacrificing layer is formed in the first cavity;etching the lower electrode layer, the piezoelectric layer, and the upper electrode layer in turn from above in a pattern of an upper electrode driving voltage pad, the piezoelectric actuator, and a lower electrode driving voltage pad, wherein the driving voltage supplying unit comprises the upper electrode driving voltage pad and the lower electrode driving voltage pad;forming a rigid layer over the substrate on which the lower electrode driving voltage pad, the piezoelectric actuator, and the upper electrode driving voltage pad are formed;forming first and second via holes, wherein the first via hole exposes the upper electrode layer at a portion of the rigid layer constituting the piezoelectric actuator, and the second via hole exposes the upper electrode layer or the lower electrode layer at another portion of the rigid layer, or the rigid layer, the upper electrode layer and the piezoelectric layer constituting the upper electrode driving voltage pad; andforming a connecting pad, filled in the first and the second via holes, which connects the upper electrode layer constituting the piezoelectric actuator to the upper electrode layer or the lower electrode layer constituting the upper electrode driving voltage pad.

17. The method as claimed in claim 12, wherein the piezoelectric layer comprises at least one of Pb(Zr, Ti)O3, BaTiO3, indium tin oxide (ITO), ZnO, and AlN.

18. The method as claimed in claim 12, wherein the upper and the lower electrode layers comprise at least one of Pt, Rh, Ta, Au, Mo, and AuPt, respectively.

19. The method as claimed in claim 12, wherein the rigid layer comprises at least one of Si3N4, AlN, polysilicon, tetraethylortho silicate (TEOS), Mo, Ta, Pt and Rh.

20. The method as claimed in claim 12, wherein the first sacrificing layer comprises at least one of polysilicon, low temperature oxide (LTO), and TEOS.

21. The method as claimed in claim 13, wherein the second and the third sacrificing layers comprise photoresist, respectively.

22. The method as claimed in claim 11, wherein the first and the second fixed signal lines and the movable signal line comprise at least one of Rh, Ti, Ta, Pt, AuNi, and Au, respectively.