This U.S. non-provisional application claims priority under 35 USC § 119 to Korean Patent Application No. 10-2023-0196038, filed in the Korean Intellectual Property Office on Dec. 29, 2023, the disclosure of which is incorporated by reference herein in its entirety.
An analog-to-digital converter may convert an analog input signal into a digital output signal. For example, a wireless communication system may use an analog-to-digital converter to convert a received radio frequency (RF) signal into a baseband signal and generate a digital output signal based on an analog baseband signal. Examples of the analog-to-digital converter may include a flash-type analog-to-digital converter, a successive approximation register (SAR) type analog-to-digital converter, a sigma delta analog-to-digital converter, and the like, and each type may be used in a field according to the characteristics thereof. The flash-type analog-to-digital converter has faster operation speed, but includes 2n comparators to provide n-bit digital output signals. Thus, the flash-type analog-to-digital converter consumes a large amount of power and has a large implementation area. The sigma delta analog-to-digital converter has a high signal-to-noise ratio (SNR), but a feedback gain of a delta modulator including passive elements is fixed to 1. Compared with the flash-type analog-to-digital converter, the SAR-type analog-to-digital converter has low operation speed, but includes only one comparator. Thus, the SAR-type analog-to-digital converter may reduce power consumption and occupation area. Various electronic devices include many analog-to-digital converters and the power consumption and occupation area may be increased as the number of the analog-to-digital converters increase.
In general, in some aspects, the present disclosure is directed toward a pipelined analog-to-digital converter and a method of analog-to-digital conversion using the pipelined analog-to-digital converter, capable of efficiently performing a low-power conversion.
According to some implementations, the present disclosure is directed to a pipelined analog-to-digital converter that includes a first stage circuit and a second stage circuit. The first stage circuit performs an analog-to-digital conversion on an analog input voltage to generate a first output signal including M higher bits among (M+N) bits of a digital output code corresponding to the analog input voltage, and generates a residue voltage corresponding to N lower bits among the (M+N) bits of the digital output code wherein M and N are natural numbers. The second stage circuit includes a residue amplifier configured to sequentially amplifying the residue voltage and a comparison voltage to generate an amplified residue voltage and an amplified comparison voltage. The second stage circuit performs an analog-to-digital conversion on the amplified residue voltage based on the amplified comparison voltage to generate a second output signal including the N lower bits corresponding to the residue voltage.
According to some implementations, the present disclosure is directed to a pipelined analog-to-digital converter that includes a first analog-to-digital converter configured to perform an analog-to-digital conversion on an analog input signal to generate a first output signal including M higher bits among (M+N) bits of a digital output code corresponding to the analog input voltage wherein M and N are natural numbers, a first digital-to-analog converter configured to perform a digital-to-analog conversion on the M higher bits to generate a coarse comparison voltage corresponding to the M higher bits. aa voltage subtractor configured to generate a residue voltage corresponding to N lower bits among the (M+N) bits of the digital output code by subtracting the coarse comparison voltage from the analog input voltage, a residue amplifier configured to sequentially amplifying the residue voltage and a comparison voltage to generate an amplified residue voltage and an amplified comparison voltage, a first input switch configured to be turned on in response to a sampling signal activated in a sampling period to apply the residue voltage to an input terminal of the residue amplifier, a second input switch configured to be turned on in response to a conversion signal activated in a conversion period following the sampling period to apply the comparison voltage to the input terminal of the residue amplifier, a comparison circuit configured to compare the amplified residue voltage and the amplified comparison voltage to generate a comparison result signal, a SAR logic circuit configured to generate a plurality of control signals for a binary search conversion based on the comparison result signal and generate a second output signal including the N lower bits corresponding to the residue voltage, and a second digital-to-analog converter configured to generate the comparison voltage based on the plurality of control signals.
According to some implementations, the present disclosure is directed to a method of analog-to-digital conversion that includes performing an analog-to-digital conversion on an analog input voltage to generate a first output signal including M higher bits among (M+N) bits of a digital output code corresponding to the analog input voltage wherein M and N are natural numbers, generating a residue voltage corresponding to N lower bits among the (M+N) bits of the digital output code, using a single residue amplifier, sequentially amplifying the residue voltage and a comparison voltage to generate an amplified residue voltage and an amplified comparison voltage, and performing an analog-to-digital conversion on the amplified residue voltage based on the amplified comparison voltage to generate a second output signal including the N lower bits corresponding to the residue voltage.
According to some implementations, the present disclosure is directed to a pipelined analog-to-digital converter and a method of analog-to-digital conversion that may reduce power consumption for analog-to-digital conversion and enhance accuracy of the analog-to-digital conversion, by sequentially amplifying the residue voltage and the comparison voltage using the one residue amplifier.
Example implementations will be more clearly understood from the following detailed description, taken in conjunction with the accompanying drawings.
Hereinafter, example implementations will be explained in detail with reference to the accompanying drawings. In the drawings, like numerals refer to like elements throughout. The repeated descriptions may be omitted.
In
The second stage circuit 200 may sequentially amplify the residue voltage VRS and a comparison voltage VC to sequentially generate an amplified residue voltage AVRS and an amplified comparison voltage AVC using one residue amplifier 210 (S300). For the sequential amplification, the second stage circuit 200 may include a first input switch SW1 that is turned on in response to a sampling signal SMP and a second input switch SW2 that is turned on in response to a conversion signal CNV.
The second stage circuit 200 may perform an analog-to-digital conversion on the amplified residue voltage AVRS based on the amplified comparison voltage AVC to generate a second output signal DO2 including the N lower bits corresponding to the residue voltage VRS (S400). In some implementations, the second stage circuit 200 may perform a SAR-type analog-to-digital conversion, such that the second stage circuit 200 performs a binary search conversion to sequentially determine the N lower bits from the most significant bit to the least significant bit with varying the voltage level of the comparison voltage VC.
The first input switch SW1 may be turned on in response to a sampling signal SMP to apply the residue voltage VRS to an input terminal of the residue amplifier 210. The second input switch SW2 may be turned on in response to a conversion signal CNV to apply a comparison voltage VC to the input terminal of the residue amplifier 210. As will be described below with reference to
The residue amplifier 210 may sequentially amplify the residue voltage VRS and the comparison voltage VC to sequentially generate an amplified residue voltage AVRS and an amplified comparison voltage AVC. The residue amplifier 210 may be implemented as an amplifier with an open-loop structure and has a fixed gain Ao without gain calibration. As a result, one residue amplifier 210 may be utilized to sequentially amplify the residue voltage VRS and the comparison voltage VC with the same gain Ao.
The comparison circuit 220 may compare the amplified residue voltage AVRS and the amplified comparison voltage AVC to generate a comparison result signal SCR. In some implementations, the comparison circuit 220 may include a first comparison input switch SW3, a second comparison input switch SW4, and a comparator 222.
The first comparison input switch SW3 may be turned on in response to the sampling signal SMP to apply the amplified residue voltage AVRS to a positive input terminal (+) of the comparator 222. The positive input terminal (+) of the comparator 222 may be connected to a capacitor CS. The second comparison input switch SW4 may be turned on in response to the conversion signal CNV to apply the amplified comparison voltage AVC to a negative input terminal (−) of the comparator 222.
The comparator 222 may compare the amplified residue voltage AVRS and the amplified comparison voltage AVC to generate a compare result signal SCR. The comparison result signal SCR may have a first logic level (e.g., a logic high level) when the amplification residue voltage AVRS is higher than the amplification comparison voltage AVC and a second logic level (e.g., a logic low level) when the amplification residue voltage AVRS is lower than the amplification comparison voltage AVC.
The SAR logic circuit 230 may generate a plurality of control signals CTR for a binary search conversion based on the comparison result signal SCR. The binary search conversion will be described below with reference to
The digital-to-analog converter 240 may generate the comparison voltage VC based on the plurality of control signals CTR. In some implementations, the digital-to-analog converter 240 may be implemented as a capacitor digital-to-analog converter as will be described below with reference to
Each of the plurality of drivers DRV1, DRV2 and DRV3 may include a capacitor C and an inverter INV. In
The capacitor C may have a first capacitor node N1 connected to a control terminal TC and a second capacitor node N2 connected to the inverter INV. The control terminal TC corresponds to a terminal that outputs the comparison voltage VC.
The inverter INV may include a pull-up unit PU connected to a first reference voltage VREFP and a pull-down section PD connected to a second reference voltage VREFN lower than the first reference voltage VREFP. For example, the first reference voltage VREFP may have a positive voltage level and the second reference voltage VREFN may be a ground voltage VSS. The second capacitor node N2 of the capacitor C may be driven by turning on one of the pull-up unit PU and the pull-down unit PD.
The normal inverter NINV may include a full PMOS transistor FMP having a full size SZF and a full NMOS transistor FMN having the full size SZF. The full size SZF of the full PMOS transistor FMP and the full size SZF of the full NMOS transistor FMN may be the same or may be different. Here, the size of a transistor refers to the ratio (W/L) of the width (W) to the length (L) of the transistor channel.
In the normal inverter NINV, the full PMOS transistor FMP corresponds to the pull-up unit NPU and a full NMOS transistor FMN corresponds to the pull-down unit NPD. A control signal CTR is applied in common to the gate of the full PMOS transistor FMP and the gate of the full NMOS transistor FMN. Depending on the voltage level of the control signal CTR, one of the full PMOS transistor FMP and the full NMOS transistor FMN may be turned on complementarily. The voltage at the control terminal TC may be initialized with the full NMOS transistor FMN turned on. When the full PMOS transistor FMP is turned on in the subsequent conversion process, the comparison voltage VC of the control terminal TC may be boosted by a voltage proportional to the capacitance of the capacitor C.
The sampling signal SMP may be activated during the sampling period PSMP and the conversion signal CNV may be activated during the conversion period PCNV following the sampling period PSMP. The first input switch SW1 and the second input switch SW2, as described with reference to
A clock signal CLK may be an internal clock signal generated internally in the pipelined analog-to-digital converter 10 based on the mode clock signal QSAR. In some implementations, the clock signal CLK may include m cycles in the conversion period PCNV, and
The sampling period PSMP corresponds to a first time interval Tss˜Tse between a sampling start time point Tss and a sampling end time point Tse. The conversion period PCNV may be divided into a second time interval Tse˜Tcs between the sampling end time point Tse and the conversion start time point Tcs, a third time interval Tcs˜Tce between the conversion start time point Tcs and a conversion end time point Tce, and a fourth time interval Tce˜Tss between the conversion end time point Tce and the sampling start time point Tss of the next cycle. In the following, the operation of the second stage circuit 200 of
In the first time interval Tss˜Tse, the first input switch SW1 is turned on and the residue voltage VRS is applied to the input terminal of the residue amplifier 210. The residue amplifier 210 amplifies the residue voltage VRS to generate the amplified residue voltage AVRS, and the first comparison input switch SW3 is turned on such that the amplified residue voltage AVRS is sampled at the positive input terminal (+) of the comparator 222.
In the second time step Tse˜Tcs, the second input switch SW2 is turned on and the comparison voltage VC is applied to the input terminal of the residue amplifier 210.
In the third time interval Tcs˜Tce, a binary search conversion is performed to sequentially determine the logic levels of the plurality of control signals CTR, i.e., the plurality of bits of the digital output signal DCODE, from the most significant bit to the least significant bit, one bit per one cycle of the clock signal CLK. At this time, each of the plurality of drivers included in the digital-to-analog converter 240 drives the second capacitor node C2 by turning on one of the pull-up unit PU connected to the first reference voltage VREFP and the pull-down unit PD connected to the second reference voltage VREFN depending on the logic level of corresponding control signal among the plurality of control signals CTR. Accordingly, the comparison voltage VC of the control terminal TC connected to the first capacitor node N1 of the capacitor is varied according to the determined logic levels of the corresponding control signal.
In the fourth time interval Tce˜Tss, the logic levels of the plurality of control signals CTR are reset for conversion of the next data included in the analog input voltage VI.
In
Through such a binary search conversion, the N lower bits of the second output signal DO2 may be determined sequentially from the most significant bit to the least significant bit.
In
According to some implementations, the digital-to-analog converter 240 included in the second stage circuit 200 may vary the voltage level of the comparison voltage VC within a reduced conversion range RCR that is reduced by a factor of 2M (e.g., M=2) in comparison with the full conversion range ECR of the analog input voltage VI while performing the binary search conversion. As shown in
Meanwhile, the first stage circuit STG1 may generate the residue voltage VRS by subtracting the course comparison voltage VC01 corresponding to the two higher bits (‘01’) from the analog input voltage VI. As a result, the analog input voltage VI input to the first stage circuit STG1 may vary over the full conversion range ECR, and the residue voltage VRS input to the second stage circuit STG2 may vary within the reduced conversion range RCR that is reduced by a factor of 2M (e.g., M=2) in comparison with the full conversion range ECR.
In
As such, since the second stage circuit STG2 of the pipeline analog-to-digital converter according to some implementations amplifies the residue voltage VRS and the comparison voltage VC with the same gain Ao, the residue amplifier 210 may be implemented in an open-loop structure and thus the gain calibration of the residue amplifier 210 is not required.
In
In
The residue amplifier 310, which is the performance bottleneck in a fast-operating SAR-type pipeline analog-to-digital converter, requires a sophisticated gain of 2M and a wide bandwidth. Implementing the residue amplifier 310 in a closed-loop structure requires high gain (about 100 dB or more) and wide bandwidth, which results in high power consumption. On the other hand, implementing the residue amplifier 310 as an open-loop structure requires digital calibration of the gain to compensate for gain error due to process, voltage, and temperature (PVT) variations, which also results in high power consumption.
According to some implementations, power consumption may be reduced by scaling down the full-scale of the digital-to-analog converter 240 by 2M instead of the gain of the residue amplifier 210 in
In
To enable the binary search conversion of
As shown in
Each of the digital-to-analog converters 240 and 241 may vary the voltage level of the comparison voltage VC within the reduced conversion range RCR that is reduced by a factor of 2M in comparison with the full conversion range ECR of the analog input voltage VI while performing a binary search conversion. Each of the digital-to-analog converters 240 and 241 may have a configuration corresponding to (M+N) bits, but the voltage level of the comparison voltage VC may be varied within the reduced conversion range RCR by disabling the inverters INV4 and INV5 of the drivers corresponding to the M higher bits. In
In some implementations, as shown in
As such, the SAR logic circuit 230 of
In some implementations, as shown in
As such, the SAR logic circuit 231 of
The analog-to-digital converter ADC may perform an analog-to-digital conversion on an analog input voltage VI to generate a first output signal DO1 including M higher bits of a digital output code DCODE.
The digital-to-analog converter may perform a digital-to-analog conversion on the M higher bits to generate a coarse comparison voltage corresponding to the M higher bits.
The voltage subtractor 110 may subtract the course comparison voltage corresponding to the M higher bits from the analog input voltage VI to generate a residue voltage VRS.
The analog-to-digital converter ADC may perform various analog-to-digital conversions, such as flash type, sigma-delta type, SAR type, etc.
In
The positive input terminal (+) of the comparator 120 may be applied an analog input voltage VI and the negative input terminal (−) of the comparator 120 may be applied the course comparison voltage CVC. The comparator 120 may compare the analog input voltage VI and the course comparison voltage CVC to generate a comparison result signal SCR. The comparison result signal SCR may have a first logic level (e.g., logic high level) when the analog input voltage VI is higher than the course comparison voltage CVC and a second logic level (e.g., logic low level) when the analog input voltage VI is lower than the course comparison voltage CVC.
The SAR logic circuit 130 may generate a plurality of control signals CTR for the binary search conversion based on the comparison result signal SCR. The plurality of control signals CTR may be M control signals corresponding to each of the M higher bits. The binary search conversion is described above with reference to
The digital-to-analog converter 140 may generate a coarse comparison voltage CVC based on the plurality of control signals CTR. In some implementations, the digital-to-analog converter 240 may be implemented as a capacitor digital-to-analog converter as described above with reference to
The voltage subtractor 110 may subtract the course comparison voltage corresponding to the M higher bits from the analog input voltage VI to generate the residue voltage VRS.
As such, both the first stage circuit 100 and the second stage circuit 200 included in the pipeline analog-to-digital converter 10 may perform SAR-type analog-to-digital conversion. The first stage circuit 100 may include a first digital-to-analog converter (e.g., 140 in
As described with reference to
The first digital-to-analog converter 140 or 141 may generate a course comparison voltage CVC for SAR-type analog-to-digital conversion based on the first-stage control signals CTR1˜CTR5, and the second digital-to-analog converter 240 may generate a comparison voltage VC for SAR-type analog-to-digital conversion based on the second-stage control signals CTR1˜CTR5.
The first stage circuit STG1 may perform a SAR-type analog-to-digital conversion by performing a binary search conversion that sequentially determines M higher bits of the digital output code DCODE from the most significant bit to the least significant bit while varying the voltage level of the course comparison voltage CVC generated through a first control terminal TC1. The second stage circuit STG2 may perform a SAR-type analog-to-digital conversion by performing a binary search conversion that sequentially determines the N lower bits of the digital output code DCODE from the most significant bit to the least significant bit while varying the voltage level of the comparison voltage VC generated through a second control terminal TC2.
In
To enable the binary search conversion of
As such, the first digital-to-analog converter 140 and the second digital-to-analog converter 240 may have the same configuration including (M+N) drivers, and operate based on the same reference voltages VREFP and VREFN.
As shown in
The first digital-to-analog converter 140 may vary the voltage level of the course comparison voltage CVC within the full conversion range ECR of the analog input voltage VI while performing the binary search conversion. The first digital-to-analog converter 140 may vary the voltage level of the course comparison voltage CVC within the full conversion range ECR by disabling the inverters INV1, INV2 INV3 in the drivers corresponding to the N lower bits, even if the configuration corresponds to the (M+N) bits. In
The second digital-to-analog converter 240 may vary the voltage level of the comparison voltage VC within the reduced conversion range RCR that is reduced by a factor of 2M in comparison with the full conversion range ECR of the analog input voltage VI while performing the binary search conversion. The second digital-to-analog converter 240 may vary the voltage level of the comparison voltage VC within the reduced conversion range RCR by disabling the inverters INV4 and INV5 in the drivers corresponding to the M higher bits, even if the configuration corresponds to the (M+N) bits. In
In some implementations, as shown in
The first SAR logic circuit 130 may vary the voltage level of the course comparison voltage CVC within the full conversion range ECR by varying each of the fourth control signal CTR4 and the fifth control signal CTR5 corresponding to the two higher bits of the digital output code DCODE to a logic low level L or a logic high level H. On the other hand, the second SAR logic circuit 230 may vary the voltage level of the comparison voltage VC within the reduced conversion range RCR by varying each of the first control signal CTR1, the second control signal CTR2 and the third control signal CTR3 corresponding to the three lower bits of the digital output code DCODE to a logic low level L or a logic high level H.
In this way, the first stage circuit STG1 may perform a binary search conversion by fixing the logic levels of the N first-stage control signals CTR1, CTR2 and CTR3 corresponding to the N lower bits among the first-stage control signals CTR1˜CTR5 corresponding to the (M+N) bits of the digital output code DCODE and varying the logic levels of the M first-stage control signals CTR4 and CTR5 corresponding to the M higher bits. On the other hand, the second stage circuit STG2 may perform a binary search conversion by fixing the voltage levels of the M second-stage control signals CTR1 and CTR2 corresponding to the M higher bits and varying the logic levels of the N second-stage control signals CTR1, CTR2 and CTR3 corresponding to the N lower bits, among the second-stage control signals CTR1˜CTR5 corresponding to the (M+N) bits of the digital output code DCODE.
In some implementations, the normal inverter NINV of
In
The pull-up unit PU may include a full PMOS transistor FMP connected between a first reference voltage VREFP and a second capacitor node N2 corresponding to the output node of the N-type split inverter NSINV, and a corresponding control signal CTR among a plurality of control signals is applied to the gate electrode.
The pull-down unit PD may include a first split-NMOS transistor SMN1 and a second split-NMOS transistor SMN2. The first split-NMOS transistor SMN1 is connected between a second reference voltage VREFN and the second capacitor node N2 and the corresponding control signal CTR is applied to the gate electrode. The second split-NMOS transistor SMN2 is connected between the second reference voltage VREFN and the second capacitor node N2 and an impedance control signal IMPC is applied to the gate electrode.
The full PMOS transistor FMP in the pull-up unit PU of the N-type split inverter NSINV may be equal to the full PMOS transistor FMP in the pull-up unit PU of the normal inverter NINV of
The control signal CTR may be applied commonly to the gate electrodes of the full PMOS transistor FMP and the first split NMOS transistor SMN1. Accordingly, the full PMOS transistor FMP and the first split NMOS transistor SMN1 may be turned on complimentarily based on the control signal CTR. The second split NMOS transistor SMN2 may be turned on, independently of the first split NMOS transistor SMN1, based on the impedance control signal IMPC.
In
In the conversion period PCNV, when the control signal CTR is transitioned by the conversion operation from the reset logic high level H to the logic low level L as the first case CS1, the impedance control signal IMPC may maintain the reset logic low level L. Accordingly, after the control signal CTR is transitioned, the full PMOS transistor FMP may be turned on, the first split NMOS transistor SMN1 may be turned off and the second split NMOS transistor SMN2 may maintain the turned-off state corresponding to the reset state.
The first size SZ1 of the first split NMOS transistor SMN1 may be smaller than the full size SZF of the full PMOS transistor FMP. The short current that may be generated when the control signal CTR transitions may be reduced as will be described below with reference to
In the conversion period PCNV, when the control signal CTR is maintained in the reset logic high level H by the conversion operation as the second case CS2, the impedance control signal IMPC may be transitioned from the reset logic low level L to the logic high level H. Accordingly, after the impedance control signal IMPC is transitioned, the full PMOS transistor FMP may maintain the turned-off state corresponding to the reset state, the first split NMOS transistor SMN1 may maintain the turned-on state corresponding to the reset state and the second split NMOS transistor SMN2 may be turned on.
The sum SZ1+SZ2 of the first size SZ1 of the first split NMOS transistor SMN1 and the second size SZ2 of the second split NMOS transistor SMN2 may be equal to the full size SZF of the full NMOS transistor FMN of the normal inverter NINV of
The full PMOS transistor FMP may start being turned on at time point T1 and the first split NMOS transistor SMN1 may be completely turned off at time point T2. In other words, both of the full PMOS transistor FMP and the first split NMOS transistor SMN1 may be turned on partially during time interval T1˜T2, and thus a short current Ish flowing from the first reference voltage VREFP to the second reference voltage VREFN may be generated during time interval T1˜T2.
As described above, the sum of the first size SZ1 of the first split NMOS transistor SMN1 and the second size SZ2 of the second split NMOS transistor SMN2 may be equal to the full size SZF of the full NMOS transistor FMN of the normal inverter NINV. For example, the division ratio of the first size SZ1 and the second size SZ2 may be 1:3, and in this case the first size SZ1 becomes ¼ of the full size SZF. As such, the turn-of resistance of the first split NMOS transistor SMN1 may be increased by reducing the first size of the first split NMOS transistor SMN1, and thus the short current Ish flowing through the first split NMOS transistor SMN1 may be reduced.
In
The first split PMOS transistor SMP1 may be connected between the first reference voltage VREFP and the second capacitor node N2 corresponding to the output node and the control signal CTR may be applied to the gate electrode of the first split PMOS transistor SMP1.
The second split PMOS transistor SMP2 may be connected between the first reference voltage VREFP and the second capacitor node N2 and the impedance control signal IMPC may be applied to the gate electrode of the second split PMOS transistor SMP2.
The full NMOS transistor FMN may be connected between the second reference voltage VREFN and the second capacitor node N2 and the control signal CTR may be applied to the gate electrode of the full NMOS transistor FMN.
The full NMOS transistor FMN in the pull-down unit PD of the P-type split inverter PSINV may be equal to the full NMOS transistor FMN in the pull-down unit PD of the normal inverter NINV of
The control signal CTR may be applied commonly to the gate electrodes of the full NMOS transistor FMN and the first split PMOS transistor SMP1. Accordingly, the full NMOS transistor FMN and the first split PMOS transistor SMP1 may be turned on complimentarily based on the control signal CTR. The second split PMOS transistor SMP2 may be turned on, independently of the first split PMOS transistor SMP1, based on the impedance control signal IMPC.
The operation of the P-type split inverter PSINV is similar to the operation of the N-type split inverter NSINV, as described with reference to
While analog-to-digital conversion for single-ended signals has been described with reference to
In
The plurality of drivers 411, 412, 421, 422, 431 and 432 may be divided into a plurality of driver pairs 410, 420 and 430, each corresponding to a plurality of bits of the digital signal DCODE as described above. Each driver pair of the plurality of driver pairs 410, 420 and 430 may include positive drivers 411, 421 and 431 connected to a positive control terminal TCP that generates a positive comparison voltage VCP and negative drivers 412, 422 and 432 connected to a negative control terminal TCP that generates a negative comparison voltage VCN. The positive control terminal TCP may be connected to the positive input terminal (+) of the residue amplifier 210 via a switch SW21 and the negative control terminal TCN may be connected to the negative input terminal (−) of the residue amplifier 211 via a switch SW22. The switches SW21 and SW22 may be turned on in response to the conversion signal CNV to apply a differential comparison voltage pair VCP and VCN to the differential input terminal pair (+, −) of the residue amplifier 211.
The positive drivers 411, 421 and 431 may include positive inverters INV1P, INV2P and INVmP, respectively, and the negative drivers 412, 422 and 432 may include negative inverters INV1N, IN2N and INVmN, respectively.
The inverter INV1P of the first positive driver 411 included in the first driver pair 410 may perform a switching operation on the first positive control signal CTR1P and drive the second node N2 of the first positive capacitor C1P. The inverter INV1N of the first negative driver 412 included in the first driver pair 410 may perform a switching operation based on the first negative control signal CTR1N and drive the second node N2 of the first negative capacitor C1N. The first positive control signal CTR1P and the first negative control signal CTR1N correspond to the first control signal CTR1, which corresponds to the least significant bit, i.e., the first bit, of the digital output signal DCODE.
The inverter INV2P of the second positive driver 421 included in the second driver pair 420 may perform a switching operation based on the second positive control signal CTR2P and drive the second node N2 of the second positive capacitor C2P. The inverter INV2N of the second negative driver 422 included in the second driver pair 420 may perform a switching operation based on the second negative control signal CTR2N and drive the second node N2 of the second negative capacitor C2N. The second positive control signal CTR2P and the second negative control signal CTR2N correspond to the second control signal CTR2 corresponding to the second bit of the digital output signal DCODE.
The inverter INVmP of the m-positive driver 431 included in the m-th driver pair 130 may perform a switching operation based on the m-th positive control signal CTRmP and drive the second node N2 of the m-th positive capacitor CmP. The inverter INVmN of the m-th negative driver 432 included in the m-th driver pair 430 may perform a switching operation based on the m-th negative control signal CTRmN and drive the second node N2 of the m-th negative capacitor CmN. The m-th positive control signal CTRmP and the m-th negative control signal CTRmN correspond to the m-th control signal CTRm corresponding to the most significant bit, i.e., the m-th bit, of the digital output signal DCODE.
To enable the binary search conversion of
While the above description focuses on the pipelined analog-to-digital converters including two stage circuits, example embodiments may also be applied to pipelined analog-to-digital converters including three or more stage circuits.
The first stage circuit STG1 may perform an analog-to-digital conversion on the analog input voltage VI to generate a first output signal DO1 including M higher bits among (M+N+L) bits of a digital output code DCODE corresponding to the analog input voltage VI, where M, N, and L are each natural numbers. The first stage circuit 100 may perform various analog-to-digital conversions, such as flash type, sigma-delta type, SAR type, and the like. Further, the first stage circuit STG1 may generate a first residue voltage VRS1 corresponding to (N+L) middle and lower bits among the (M+N+L) bits of the digital output code DCODE.
The second stage circuit STG2 may generate a first amplified residue voltage and a first amplified comparison voltage by sequentially amplifying the first residue voltage VRS1 and a first comparison voltage using one residue amplifier as described above, and may perform a SAR-type analog-to-digital conversion of the first amplified residue voltage based on the first amplified comparison voltage to generate a second output signal DO2 including N middle bits among the (M+N+L) bits of the digital output code DCODE. Further, the second stage circuit STG2 may generate a second residue voltage VRS2 corresponding to L lower bits among the (M+N+L) bits of the digital output code DCODE.
The third stage circuit STG3 may generate a second amplified residue voltage and a second amplified comparison voltage by sequentially amplifying the second residue voltage VRS2 and the second comparison voltage using another residue amplifier as described above, and performing a SAR-type analog-to-digital conversion on the second amplified residue voltage based on the second amplified comparison voltage to generate a third output signal DO3 including the L lower bits corresponding to the second residue voltage.
In
The RF circuit 30 may receive an RF signal IN through the antenna 20 and may generate a baseband signal by performing down-conversion on the received RF signal IN. The baseband signal may be referred to as an analog input signal SI. In some implementations, the RF circuit 30 may generate the analog input signal SI by performing direct conversion so that the RF signal IN is directly converted into a baseband signal. In some implementations, the RF circuit 30 may convert the RF signal IN into an Intermediated Frequency (IF) signal and may generate the analog input signal SI by performing 2-step down conversion so that the IF signal is converted into the baseband signal.
The pipelined analog-to-digital converter 10 may receive the analog input signal SI and may convert the received analog input signal SI into a digital output signal or a digital code DCODE. According to some implementations, the pipeline analog-to-digital converter 10 may include a second stage circuit that performs a SAR-type analog-to-digital conversion by sequentially amplifying a residual voltage and a comparison voltage using one residual amplifier, as described above.
The reference voltage generator 40 may generate a reference voltage VREF and may provide the generated reference voltage VREF to the ADC 10. The reference voltage VREF may include the first reference voltage VREFP and the second reference voltage VREFN as described above.
The reference voltage generator 40 requires high power consumption because it must supply the peak current depending on the high frequency signal for the rapid switching operation of the capacitor digital-to-analog converter (CDAC) included in the pipeline analog-to-digital converter 10, and may consume more power than the core circuitry of the pipeline analog-to-digital converter 10 itself. When a low-power reference voltage generator is used to reduce the band width, a large output capacitor 90 is required to reduce the voltage change caused by the peak current of the pipeline analog-to-digital converter 10 operating at a high rate. For example, to secure a 12-bit resolution, an output capacitor of 1 nF or more is required, which accounts for the highest percentage (e.g., about 50%) of the total area of the SAR-type pipeline analog-to-digital converter 10 and the reference voltage generator 40. In addition, as the number of SAR-type pipeline analog-to-digital converters included in the semiconductor chip increases, the area occupied by the output capacitor 90 increases.
The pipeline analog-to-digital converter 10 according to example embodiments may reduce the size of the output capacitor 90 of the reference voltage generator 40 by sequentially amplifying the residual voltage and the comparison voltage using one residual amplifier to reduce power consumption, and thus reduce the implementation area of the semiconductor device 500 including the pipeline analog-to-digital converter 10.
In some implementations, the pipelined analog-to-digital converter 1300a and the modem 1400a may be embodied as a single chip. The single chip including the pipeline analog-to-digital converter 1300a and the modem 1400a may be coupled to the RFIC 1200a via a plurality of analog signal lines. The pipelined analog-to-digital converter 1300a may include at least one SAR-type analog-to-digital converter implemented using a single residue amplifier according to example embodiments to reduce power consumption. Thus, example embodiments may be usefully applied to modem chips.
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In particular, the IoT device 2000 may include a communication interface 2200 to communicate with an external device. The communication interface 2200 may be, for example, a wireless short-range communication interface such as a LAN, Bluetooth, Wi-Fi, or Zigbee, or a modem communication interface, e.g., PLC, 3G, or LTE, which may access a mobile communication network. The communication interface 2200 may include a transmitter, a receiver or a transceiver (transmitter and receiver). The IoT device 2000 may transmit information to and/or receive information from an access point or a gateway through the communication interface. Also, the IoT device 2000 may transmit and/or receive control information or data of the IoT device 2000 by communicating with a user device or another IoT device.
The receiver of the communication interface 2200 may include a pipelined analog-to-digital converter according to some implementations, and the pipeline analog-to-digital converter may be implemented as described above with reference to
The IoT device 2000 may include a processor, such as an AP 2100, for executing an arithmetic operation. The IoT device 2000 may further include a power supply, such as a battery or an external power supply which receives power from an outside source. Also, the IoT device 2000 may include a display 2400 for displaying data, such as an internal state of the IoT device 2000. The user may control the IoT device 2000 via a user interface (UI) of the display 2400. The IoT device 2000 may transmit the internal state and/or data through the transmitter and may receive a control instruction and/or data from the outside through the receiver.
A memory 2300 may store a control instruction code for controlling the IoT device 2000, control data, or user data. The memory 2300 may include at least one of a volatile memory and a non-volatile memory. The IoT device 2000 may further include a storage device. The storage device may be a non-volatile medium. The storage device may store user information provided via an input/output device 2500 and sensing information collected through a sensor 2600.
As described above, the pipelined analog-to-digital converter and the method of analog-to-digital conversion according to some implementations may reduce power consumption for analog-to-digital conversion and enhance accuracy of the analog-to-digital conversion, by sequentially amplifying the residue voltage and the comparison voltage using the one residue amplifier.
Some implementations may be applied to any electronic devices and systems including an analog-to-digital converter. For example, some implementations may be applied to systems, such as a memory card, a solid state drive (SSD), an embedded multimedia card (eMMC), a universal flash storage (UFS), a mobile phone, a smart phone, a personal digital assistant (PDA), a portable multimedia player (PMP), a digital camera, a camcorder, a personal computer (PC), a server computer, a workstation, a laptop computer, a digital TV, a set-top box, a portable game console, a navigation system, a wearable device, an internet of things (IoT) device, an internet of everything (IoE) device, an e-book, a virtual reality (VR) device, an augmented reality (AR) device, a communication device, an automotive driving device, etc.
While this disclosure contains many specific implementation details, these should not be construed as limitations on the scope of what may be claimed. Certain features that are described in this disclosure in the context of separate implementations can also be implemented in combination in a single implementation. Conversely, various features that are described in the context of a single implementation can also be implemented in multiple implementations separately or in any suitable subcombination. Moreover, although features may be described above as acting in certain combinations, one or more features from a combination can in some cases be excised from the combination, and the combination may be directed to a subcombination or variation of a subcombination.
Number | Date | Country | Kind |
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10-2023-0196038 | Dec 2023 | KR | national |