This is a National Phase Application filed under 35 U.S.C. 371 as a national stage of PCT/CN2020/138623 filed on Dec. 23, 2020, the content of which is incorporated herein by reference in its entirety.
The present disclosure relates to, but is not limited to, the technical field of Organic Light Emitting Diode (OLED) display, and in particular, to a pixel circuit array, a display panel, a method for driving a pixel circuit array, and a method for driving a display panel.
In a process of displaying a picture (which is, for example, text, an image, a combination of text and an image, and the like) by a display panel such as an OLED display panel, a phenomenon of image ghosting (also referred to as moving picture ghosting or moving image ghosting) may occur during switching of moving pictures. That is, when the display panel switches one frame of picture to another frame of picture, a user may simultaneously observe information of both frames of picture, making display of details and outlines of the current picture (i.e., the another frame of picture) unclear (or blurred), thereby degrading the display effect of the display panel. Therefore, it is desirable to mitigate or eliminate the phenomenon of moving picture ghosting.
A first aspect of the present disclosure provides a pixel circuit array, including:
a first signal sensing line and a second signal sensing line; and
N pixel circuits arranged in a column;
wherein all of the N pixel circuits are divided into a first group and a second group, each pixel circuit in the first group is coupled to the first signal sensing line, and each pixel circuit in the second group is coupled to the second signal sensing line different from the first signal sensing line, where N is a positive integer greater than 1.
In an embodiment, the first group includes 1-st to (N/S)-th pixel circuits of the N pixel circuits, and the second group includes ((N/S)+1)-th to N-th pixel circuits of the N pixel circuits, wherein S is a factor of N.
In an embodiment, the first group includes the pixel circuits in odd rows of the N pixel circuits, and the second group includes the pixel circuits in even rows of the N pixel circuits, where N is an even number.
In an embodiment, N is an even number, and S is equal to 2.
In an embodiment, each of the N pixel circuits includes a light emitting device and a light emission control circuit, and the light emission control circuit is configured to control the light emitting device to emit light or not.
In an embodiment, the light emitting device is an organic light emitting diode.
In an embodiment, the light emission control circuit includes a display switching transistor, a driving transistor, a sensing switching transistor, and a storage capacitor which are coupled together.
In an embodiment, each of the display switching transistor, the driving transistor, and the sensing switching transistor includes a control electrode, a first electrode, and a second electrode, the second electrode of the display switching transistor is coupled to the control electrode of the driving transistor, the first electrode of the driving transistor is configured to be coupled to a high level terminal, the second electrode of the driving transistor is coupled to the first electrode of the sensing switching transistor, and the second electrode of the sensing switching transistor is coupled to the first signal sensing line or the second signal sensing line.
In an embodiment, a first terminal of the storage capacitor is coupled to the second electrode of the display switching transistor and the control electrode of the driving transistor, respectively, a second terminal of the storage capacitor is coupled to the second electrode of the driving transistor, the first electrode of the sensing switching transistor, and an anode of the organic light emitting diode, respectively, and a cathode of the organic light emitting diode is configured to be coupled to a low level terminal.
In an embodiment, the pixel circuit array further includes a data line, a first gate line, and a second gate line, wherein the first electrode of the display switching transistor is coupled to the data line, the control electrode of the display switching transistor is coupled to the first gate line, and the control electrode of the sensing switching transistor is coupled to the second gate line.
In an embodiment, each of the display switching transistor, the driving transistor, and the sensing switching transistor is an N-type transistor or a P-type transistor.
In an embodiment, each of the first signal sensing line and the second signal sensing line extends through a region in which all of the N pixel circuits are located.
In an embodiment, the first signal sensing line extends through a region in which the 1-st to (N/S)-th pixel circuits are located, and the second signal sensing line extends through a region in which the ((N/S)+1)-th to N-th pixel circuit are located.
A second aspect of the present disclosure provides a display panel, which includes a gate driving circuit and M pixel circuit arrays, wherein each of the M pixel circuit arrays is the pixel circuit array according to any one of the foregoing embodiments of the first aspect of the present disclosure, and the M pixel circuit arrays including M columns of pixel circuits and N rows of pixel circuits, M being a positive integer.
In an embodiment, the gate driving circuit is configured to: drive the pixel circuits in the second group not to emit light during driving the pixel circuits in the first group to display an image; or drive the pixel circuits in the first group not to emit light during driving the pixel circuits in the second group to display an image.
In an embodiment, N is an even number, and the gate driving circuit is configured to: drive the pixel circuits in ((N/2)+1)-th to N-th rows not to emit light during driving the pixel circuits in 1-st to (N/2)-th rows to display the image; or drive the pixel circuits in 1-st to (N/2)-th rows not to emit light during driving the pixel circuits in ((N/2)+1)-th to N-th rows to display the image.
In an embodiment, the gate driving circuit includes N gate driving units cascaded together, the N gate driving units are in one-to-one correspondence with the N rows of pixel circuits, and the N gate driving units are coupled to the N rows of pixel circuits, respectively.
In an embodiment, the control electrodes of the display switching transistors of the pixel circuits in a same row of the N rows of pixel circuits are all coupled to a same first gate line, and the control electrodes of the sensing switching transistors of the pixel circuits in a same row of the N rows of pixel circuits are all coupled to a same second gate line.
In an embodiment, each of the N gate driving units includes a signal input terminal, a cascade output terminal, a first signal output terminal, and a second signal output terminal; and
the signal input terminal of each of the gate driving unit in a first stage and the gate driving unit in a second stage is coupled to a frame start signal input line, the signal input terminal of the gate driving unit in an i-th stage is coupled to the cascade output terminal of the gate driving unit in an (i−2)-th stage, and the first signal output terminal and the second signal output terminal of each of the N gate driving units are coupled to the first gate line and the second gate line of each pixel circuit in a corresponding row, where 3≤i≤N.
A third aspect of the present disclosure provides a method for driving a pixel circuit array, wherein the pixel circuit array is the pixel circuit array according to any one of the foregoing embodiments of the first aspect of the present disclosure, the 1-st to (N/2)-th pixel circuit are located in an upper half screen, the ((N/2)+1)-th to N-th pixel circuits are located in a lower half screen, and the method includes:
providing a turn-on level to the first gate line and the second gate line of each pixel circuit in one of the upper half screen and the lower half screen, respectively, to turn on both the display switching transistor and the sensing switching transistor, so as to input a data voltage provided by the data line to the control electrode of the driving transistor via the display switching transistor, and to input a low level provided by a corresponding one of the first signal sensing line and the second signal sensing line to the second electrode of the driving transistor;
providing a turn-off level to the first gate line and the second gate line of each pixel circuit in the one of the upper half screen and the lower half screen, respectively, to turn off both the display switching transistor and the sensing switching transistor, thereby causing the organic light emitting diode to start light emission; and
during providing the turn-on level to the first gate line and the second gate line of each pixel circuit in the one of the upper half screen and the lower half screen, respectively, providing a turn-on level to the first gate line and the second gate line of each pixel circuit in the other of the upper half screen and the lower half screen to allow the data voltage provided by the data line to be input to the control electrode of the driving transistor via the display switching transistor, and allow a reference voltage provided by a corresponding one of the first and second signal sensing lines to be input to the second electrode of the driving transistor, wherein the reference voltage is higher than the data voltage to make the organic light emitting diode of each pixel circuit in the other of the upper half screen and the lower half screen not emit light.
In an embodiment, each of the display switching transistor, the driving transistor, and the sensing switching transistor is an N-type transistor, the turn-on level is a high level, and the turn-off level is a low level.
A fourth aspect of the present disclosure provides a method for driving a display panel, wherein the display panel is the display panel according to any one of the foregoing embodiments of the second aspect of the present disclosure, the 1-st to (N/2)-th rows of pixel circuits of the N rows of pixel circuits are located in an upper half screen, the ((N/2)+1)-th to N-th rows of pixel circuits of the N rows of pixel circuits are located in a lower half screen, and the method includes:
providing a turn-on level to the first gate line and the second gate line of each row of pixel circuits in one of the upper half screen and the lower half screen, respectively, to turn on both the display switching transistor and the sensing switching transistor, so as to input a data voltage provided by the data line to the control electrode of the driving transistor via the display switching transistor, and to input a low level provided by a corresponding one of the first signal sensing line and the second signal sensing line to the second electrode of the driving transistor;
providing a turn-off level to the first gate line and the second gate line of each row of pixel circuits in the one of the upper half screen and the lower half screen, respectively, to turn off both the display switching transistor and the sensing switching transistor, thereby causing the organic light emitting diode to start light emission; and
during providing the turn-on level to the first gate line and the second gate line of each row of pixel circuits in the one of the upper half screen and the lower half screen, respectively, providing a turn-on level to the first gate line and the second gate line of each row of pixel circuits in the other of the upper half screen and the lower half screen, respectively, to allow the data voltage provided by the data line to be input to the control electrode of the driving transistor via the display switching transistor, and allow a reference voltage provided by a corresponding one of the first and second signal sensing lines to be input to the second electrode of the driving transistor, wherein the reference voltage is higher than the data voltage to make the organic light emitting diodes of a respective row of pixel circuits in the other of the upper half screen and the lower half screen not emit light.
In an embodiment, each of the display switching transistor, the driving transistor, and the sensing switching transistor is an N-type transistor, the turn-on level is a high level, and the turn-off level is a low level.
To enable one of ordinary skill in the art to better understand technical solutions of the present disclosure, a pixel circuit array, a display panel, a method for driving a pixel circuit array, and a method for driving a display panel provided by the present disclosure will be described in further detail below with reference to the accompanying drawings and exemplary embodiments.
It will be understood that, although the terms “first”, “second”, “third”, and the like may be used herein for describing various elements, these elements should not be limited by these terms. Instead, these terms are only used for distinguishing one element from another. For example, a first element may be termed a second element, a third element, or the like, and similarly, a second element may be termed a first element, a third element, or the like, without departing from the scope of the present disclosure.
Each transistor in the present disclosure may be an N-type Thin Film Transistor (TFT) such as an N-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET), or may be a P-type TFT such as a P-type MOSFET. However, the present disclosure is not limited thereto, and for example, each transistor in the present disclosure may be an N-type or P-type low temperature polysilicon TFT. Each TFT is a three-electrode element including a gate electrode (which may be referred to as a control electrode), a source electrode, and a drain electrode. The source electrode is an electrode which supplies carriers to a transistor. In each TFT, carriers flow from the source electrode. The drain electrode is an electrode through which carriers exit from the TFT. That is, in the MOSFET, carriers flow from the source electrode to the drain electrode. In the case of an N-type TFT, carriers are electrons, and therefore, a voltage of the source electrode is lower than that of the drain electrode, so that electrons can flow from the source electrode to the drain electrode. In the N-type TFT, electrons flow from the source electrode to the drain electrode, and thus a current flows from the drain electrode to the source electrode. In contrast, in the case of a P-type TFT (e.g., a P-type MOSFET), since carriers are holes, a voltage of the source electrode is higher than that of the drain electrode, so that holes can flow from the source electrode to the drain electrode. In the P-type TFT, since holes flow from the source electrode to the drain electrode, a current flows from the source electrode to the drain electrode. It should be understood that the source and drain electrodes of the MOSFET may not be fixed. For example, the source and drain electrodes of the MOSFET may vary depending on the applied voltage. Therefore, in the description of an embodiment of the present disclosure, one of the source and drain electrodes is referred to as a first electrode and the other of the source and drain electrodes is referred to as a second electrode. In the case of an N-type transistor, a turn-on level is a high level and a turn-off level is a low level. In the case of a P-type transistor, a turn-on level is a low level and a turn-off level is a high level. In the following description, an example in which each transistor is an N-type transistor is taken, otherwise further explanation is provided.
As shown in
When external compensation needs to be performed on the pixel circuit, an operation process of the pixel circuit may include at least the following two phases (or stages) which are a pixel driving phase (including a data voltage writing process) and a pixel sensing phase (including a current reading process).
In the pixel driving phase, a data voltage (which may also be referred to as a data level or a data signal) VDATA supplied from the data line DATA may be written into a pixel. In the pixel sensing phase, a reference voltage VREF provided by the signal sensing line SENSE may be written into the pixel, and an electric signal at the second electrode (e.g., a source electrode) of the driving transistor T3 is read to the signal sensing line SENSE through the sensing switching transistor T2 to detect a degree of shift of a threshold voltage of the driving transistor T3 and perform external compensation for the threshold voltage, thereby eliminating the brightness non-uniformity of the pixel caused by the shift of the threshold voltage of the driving transistor T3. During both the data voltage writing process and the current reading process, a turn-on level (which may also be referred to as a valid level) needs to be input to the control electrode of the sensing switching transistor T2 through the corresponding gate line G2 to turn on the sensing switching transistor T2. It should be noted that the method of external compensation of a pixel unit of an OLED display panel is conventional in the art, and thus detailed description thereof is omitted herein.
The inventors of the present inventive concept have found that, moving picture ghosting will occur during the operation of a pixel circuit array in the related art. That is, when a display panel including the pixel circuit array switches from one frame of picture to another frame of picture, a user may simultaneously observe information of the one frame of picture and the another frame of picture. In general, the higher a refresh frequency of the display panel is, the less noticeable the moving picture ghosting is. In other words, a Moving Picture Response Time (MPRT) may be shortened to mitigate moving picture ghosting, and a shorter MPRT will result in less noticeable moving picture ghosting. The conventional method of shortening the MPRT is to increase the refresh frequency of the display panel. However, the increase in the refresh frequency of the display panel is limited by a performance of the display panel and a performance of a graphic card controlling the display panel. Therefore, the moving picture ghosting cannot be effectively or significantly mitigated.
Some embodiments of the present disclosure provide a pixel circuit array, a display panel, a method for driving a pixel circuit array, and a method for driving a display panel, all of which can shorten the MPRT by shortening a light emitting time duration of each pixel without increasing a refresh frequency of the display panel, thereby effectively or significantly mitigating the moving picture ghosting, as will be further described below.
An embodiment of the present disclosure provides a pixel circuit array, and
The pixel circuit array may include M columns and N rows of pixel circuits, where M is a positive integer, and N is a positive integer and an even number. Each of the pixel circuits in the M column and the N row may be the pixel circuit shown in
As shown in
In an embodiment, the first group includes the 1-st through the (N/2)-th pixel circuits in each column of the pixel circuit array (i.e., includes the pixel circuits located in an upper half screen), and the second group includes the ((N/2)+1)-th through the N-th pixel circuits in each column of the pixel circuit array (i.e., includes the pixel circuits located in a lower half screen), where N is a positive integer and is an even number. In this case, the second electrode of the sensing switching transistor T2 of each pixel circuit in the first group being coupled to the first signal sensing line SENSE1 means that, the second electrodes of the sensing switching transistors T2 of the 1-st to the (N/2)-th pixel circuits in each column of the pixel circuit array (i.e., the pixel circuits located in the upper half screen) are all coupled to the first signal sensing line SENSE1. The second electrode of the sensing switching transistor T2 of each pixel circuit in the second group being coupled to the second signal sensing line SENSE2 means that, the second electrodes of the sensing switching transistors T2 of the ((N/2)+1)-th to the N-th pixel circuits in each column of the pixel circuit array (i.e., the pixel circuits located in the lower half screen) are all coupled to the second signal sensing line SENSE2.
In an embodiment, the first group includes the 1-st through the (N/3)-th pixel circuits in each column of the pixel circuit array, and the second group includes the ((N/3)+1)-th through the N-th pixel circuits in each column of the pixel circuit array, where N is a positive integer greater than 1 and (N/3) is an integer. In this case, the second electrode of the sensing switching transistor T2 of each pixel circuit in the first group being coupled to the first signal sensing line SENSE1 means that, the second electrodes of the sensing switching transistors T2 of the 1-st to the (N/3)-th pixel circuits in each column of the pixel circuit array (i.e., the pixel circuits located in an upper ⅓ screen) are all coupled to the first signal sensing line SENSE1. The second electrode of the sensing switching transistor T2 of each pixel circuit in the second group being coupled to the second signal sensing line SENSE2 means that, the second electrodes of the sensing switching transistors T2 of the ((N/3)+1)-th to the N-th pixel circuits in each column of the pixel circuit array (i.e., the pixel circuits located in a lower ⅔ screen) are all coupled to the second signal sensing line SENSE2.
In an embodiment, the first group includes the 1-st through the (N/S)-th pixel circuits in each column of the pixel circuit array, and the second group includes the ((N/S)+1)-th through the N-th pixel circuits in each column of the pixel circuit array, where N is a positive integer greater than 1, and S is a factor of N (in other words, N is an integer multiple of S, or S is a divisor that divides N without a remainder). In this case, the second electrode of the sensing switching transistor T2 of each pixel circuit in the first group being coupled to the first signal sensing line SENSE1 means that, the second electrodes of the sensing switching transistors T2 of the 1-st to the (N/S)-th pixel circuits in each column of the pixel circuit array are all coupled to the first signal sensing line SENSE1. The second electrode of the sensing switching transistor T2 of each pixel circuit in the second group being coupled to the second signal sensing line SENSE2 means that, the second electrodes of the sensing switching transistors T2 of the ((N/S)+1)-th to the N-th pixel circuits in each column of the pixel circuit array are all coupled to the second signal sensing line SENSE2. For example, in a case where N is equal to 540 or an integer multiple of 540, S may be 2, 3, 4, 5, 6, 9, 10, 15, 18, 20, 27, 30, 36, 60, 180, or the like.
In an embodiment, the first group includes the pixel circuits in odd rows (e.g., the 1-st, 3-rd, 5-th, . . . , and (N−1)-th pixel circuits) and in each column of the pixel circuit array, and the second group includes the pixel circuits in even rows (e.g., the 2-nd, 4-th, 6-th, . . . , and N-th pixel circuits) and in each column of the pixel circuit array, where N is a positive integer and is an even number. In this case, the second electrode of the sensing switching transistor T2 of each pixel circuit in the first group being coupled to the first signal sensing line SENSE1 means that, the second electrodes of the sensing switching transistors T2 of the pixel circuits in odd rows and in each column of the pixel circuit array are all coupled to the first signal sensing line SENSE1. The second electrode of the sensing switching transistor T2 of each pixel circuit in the second group being coupled to the second signal sensing line SENSE2 means that, the second electrodes of the sensing switching transistors T2 of the pixel circuits in even rows and in each column of the pixel circuit array are all coupled to the second signal sensing line SENSE2.
Several examples of the division of the first group and the second group are listed above, however, the present disclosure is not limited thereto. For example, one of ordinary skill in the art may adopt another dividing approach as desired to mitigate the phenomenon of moving picture ghosting based on the teachings of the present disclosure.
It should be noted that the operating principle and driving method of the pixel array (i.e., the pixel circuit array) shown in
As shown in
As described above, pixel circuits in the column shown in
Further, embodiments of the present disclosure provide a method for driving the pixel circuit array as shown in
As described above, each of the display switching transistor T1, the driving transistor T3, and the sensing switching transistor T2 may be an N-type transistor. In this case, the turn-on level is a high level, and the turn-off level is a low level.
An embodiment of the present disclosure provides a display panel as shown in
For example, the gate driving circuit GOA is configured to: drive the pixel circuits in the ((N/2)+1)-th row to the N-th row not to emit light during driving the pixel circuits in the 1-st row to the (N/2)-th row to display a picture (or an image); alternatively, drive the pixel circuits in the 1-st row to the (N/2)-th row not to emit light during driving the pixel circuits in the ((N/2)+1)-th row to the N-th row to display a picture (or an image). Thus, the MPRT of the display panel can be improved by shortening a light emitting time duration of each pixel without increasing a refresh frequency of the display panel, thereby effectively mitigating the moving picture ghosting.
For example, the gate driving circuit GOA may include N gate driving units cascaded together, where the N gate driving units are in one-to-one correspondence with the N rows of pixel circuits, and the N gate driving units are coupled to the N rows of pixel circuits, respectively. Further, a structure of each of the gate driving units may be as shown in
The first transistor M1 includes a control electrode coupled to a random signal terminal OE, a first electrode coupled to a signal input terminal STU1 (and the signal input terminal STU1 may be coupled to a cascade output terminal CR<N−2> of an (N−2)-th gate driving unit), and a second electrode coupled to a sensing cascade node HH. The second transistor M2 includes a control electrode coupled to the sensing cascade node HH, a first electrode coupled to a first clock signal terminal, and a second electrode coupled to a sensing precharge node NN. One terminal of the first capacitor Cl is coupled to the sensing cascade node HH, and the other terminal of the first capacitor C1 is coupled to the sensing precharge node NN. The third transistor M3 includes a control electrode coupled to the sensing precharge node NN, a first electrode coupled to a first power source terminal VDD, and a second electrode coupled to a pull-up node QA. The fourth transistor M4 includes a control electrode coupled to a pull-down node QB, a first electrode coupled to the sensing precharge node NN, and a second electrode coupled to a second power source terminal VGL1. The fifth transistor M5 includes a control electrode coupled to the cascade output terminal CR<N−2> of the (N−2)-th gate driving unit, a first electrode coupled to the first power source terminal VDD, and a second electrode coupled to the pull-up node QA. The sixth transistor M6 includes a control electrode coupled to a total reset terminal TRST, a first electrode coupled to the pull-up node QA, and a second electrode coupled to the second power source terminal VGL1. The seventh transistor M7 includes a control electrode coupled to a cascade output terminal CR<N+3> of an (N+3)-th gate driving unit, a first electrode coupled to the pull-up node QA, and a second electrode coupled to the second power source terminal VGL1. The eighth transistor M8 includes a control electrode and a first electrode both coupled to the first power source terminal VDD, and a second electrode coupled to the pull-down node QB. The ninth transistor M9 includes a control electrode coupled to the pull-up node QA, a first electrode coupled to the pull-down node QB, and a second electrode coupled to the second power source terminal VGL1. The tenth transistor M10 includes a control electrode coupled to the pull-down node QB, a first electrode coupled to the pull-up node QA, and a second electrode coupled to the second power source terminal VGL1. The eleventh transistor M11 includes a control electrode coupled to the first clock signal terminal CLKA, a first electrode coupled to the pull-down node QB, and a second electrode coupled to a first electrode of the twelfth transistor M12. The twelfth transistor M12 includes a control electrode coupled to the sensing cascade node HH, and a second electrode coupled to the second power source terminal VGL1. The thirteenth transistor M13 includes a control electrode coupled to the cascade output terminal CR<N−2> of the (N−2)-th gate driving unit, a first electrode coupled to the pull-down node QB, and a second electrode coupled to the second power source terminal VGL1. The fourteenth transistor M14 includes a control electrode coupled to the pull-up node QA, a first electrode coupled to a second clock signal line CLKD_1 to which a 1-st stage gate driving unit (i.e., the gate driving unit in a 1-st stage) is coupled, and a second electrode coupled to a cascade output terminal CR (i.e., “CR<N>” shown in
For example, each of the transistors M1 to M19 may be an N-type transistor or a P-type transistor, which can simplify a manufacturing process thereof and can improve a product yield thereof. In an example, each of all transistors in an embodiment of the present application may be a low temperature polysilicon thin film transistor that may have a bottom gate structure or a top gate structure, considering that a leakage current of the low temperature polysilicon thin film transistor is small.
In an example, the control electrodes of the display switching transistors T1 of the pixel circuits in a same row among the N rows of pixel circuits are all coupled to a same first gate line G1, and the control electrodes of the sensing switching transistors T2 of the pixel circuits in a same row among the N rows of pixel circuits are all coupled to a same second gate line G2, similar to the case shown in
In an example, each of the N gate driving units includes the signal input terminal STU1, the cascade output terminal CR, the first signal output terminal OUT1, and the second signal output terminal OUT2. The signal input terminal STU1 of each of the gate driving units in the first and second stages is coupled to the frame start signal input line STU, and the signal input terminal of the gate driving unit in the i-th stage is coupled to the cascade output terminal CR of the gate driving unit in the (i−2)-th stage; further, the first and second signal output terminals OUT1 and OUT2 of each of the N gate driving units are coupled to the first and second gate lines G1 and G2 of the pixel circuits in a corresponding row, respectively, where 3≤i≤N.
In
Embodiments of the present disclosure provide a method for driving the display panel. As described above, the 1-st to (N/2)-th rows of pixel circuits of the N rows of pixel circuits are located in the upper half screen, and the ((N/2)+1)-th to N-th rows of pixel circuits of the N rows of pixel circuits are located in the lower half screen. The method may include a step of: supplying a turn-on level to the first gate line G1 and the second gate line G2 of each row of pixel circuits in one of the upper half screen and the lower half screen, respectively, to turn on both the display switching transistor T1 and the sensing switching transistor T2, so that a data voltage supplied from the data line DATA is input to the control electrode of the driving transistor T3 via the display switching transistor T1, and a low level supplied from a corresponding one of the first signal sensing line SENSE1 and the second signal sensing line SENSE2 is input to the second electrode of the driving transistor T3. The method may further include a step of: supplying a turn-off level to the first gate line G1 and the second gate line G2 of each row of pixel circuits in the one of the upper half screen and the lower half screen, respectively, to turn off both the display switching transistor T1 and the sensing switching transistor T2, thereby causing the organic light emitting diodes OLED to start light emission. The method may further include a step of: while the turn-on level is supplied to the first gate line G1 and the second gate line G2 of each row of pixel circuits in the one of the upper half screen and the lower half screen, supplying a turn-on level to the first gate line G1 and the second gate line G2 of each row of pixel circuits in the other of the upper half screen and the lower half screen, respectively, so that a data voltage VDATA supplied from the data line DATA is input to the control electrode of the driving transistor T3 via the display switching transistor T1, and a reference voltage VREF provided by a corresponding one of the first and second signal sensing lines SENSE1 and SENSE2 is input to the second electrode of the driving transistor T3, where the reference voltage VREF is higher than the data voltage VDATA to make the organic light emitting diodes OLED of the rows of pixel circuits in the other one of the upper half screen and the lower half screen not emit light.
As described above, each of the display switching transistor T1, the driving transistor T3, and the sensing switching transistor T2 may be an N-type transistor. In this case, the turn-on level is a high level, and the turn-off level is a low level.
As described above,
It is to be understood that the foregoing embodiments of the disclosure may be combined with each other in a case of no explicit conflict.
It should be noted that the above embodiments are merely exemplary embodiments employed to illustrate the principles of the present disclosure, and the present disclosure is not limited thereto. It will be apparent to one of ordinary skill in the art that various changes and modifications may be made without departing from the scope of the present disclosure as defined in the appended claims, and such changes and modifications also fall within the scope of the present disclosure.
Filing Document | Filing Date | Country | Kind |
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PCT/CN2020/138623 | 12/23/2020 | WO |
Publishing Document | Publishing Date | Country | Kind |
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WO2022/133803 | 6/30/2022 | WO | A |
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Number | Date | Country | |
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20220406252 A1 | Dec 2022 | US |