The present disclosure relates to the field of display technology, in particular to a pixel circuit, a driving method and a display device.
Organic light emitting diode (OLED) displays are one of the hot spots in the field of flat panel display research today. Unlike thin film transistor liquid crystal displays (TFT-LCDs), which use a stable voltage to control brightness, OLEDs are driving by a driving current that needs to be kept constant to control illumination. The OLED display panel includes a plurality of pixel units configured with pixel driving circuits arranged in a plurality of rows and a plurality of columns. Each pixel driving circuit includes a driving transistor having a gate terminal connected to each row gate line and a drain terminal connected to one column data line. When the row of pixel circuits that are gated is turned on, the switching transistor connected to the driving transistor is turned on, and the data voltage is applied from the data line to the driving transistor via the switching transistor, so that the driving transistor outputs a current corresponding to the data voltage to an OLED device, to drive the OLED device to emit light of corresponding brightness.
In one aspect, the present disclosure provides in some embodiments a pixel circuit, including a light emitting element, a driving circuit, a first energy storage circuit, a first setting circuit, a second setting circuit and a light emitting control circuit; wherein the light emitting control circuit is electrically connected to a light emitting control terminal, a first voltage terminal and a first terminal of the driving circuit respectively, and is configured to control to connect the first voltage terminal and the first terminal of the driving circuit under the control of a light emitting control signal provided by the light emitting control terminal: a control terminal of the driving circuit is electrically connected to a first node, and a second terminal of the driving circuit is electrically connected to a first electrode of the light emitting element, the driving circuit is configured to control to connect the first voltage terminal and the first electrode of the light emitting element under the control of a potential of the first node; the first electrode of the light emitting element is electrically connected to a second node: a second electrode of the light emitting element is electrically connected to a second voltage terminal: a first terminal of the first energy storage circuit is electrically connected to the first node, and a second terminal of the first energy storage circuit is electrically connected to a third node, the first energy storage circuit is configured to store electrical energy: the second node is electrically connected to the third node: the first setting circuit is electrically connected to a first control terminal, a first setting voltage terminal and the first node respectively, and is configured to control to connect the first setting voltage terminal and the first node under the control of a first control signal provided by the first control terminal: the second setting circuit is electrically connected to a second control terminal, a second setting voltage terminal and a second terminal of the first energy storage circuit respectively, and is configured to control to connect the second setting voltage terminal and the second terminal of the first energy storage circuit under the control of a second control signal provided by the second control terminal.
Optionally, the pixel circuit further includes a data writing-in circuit; wherein the data writing-in circuit is electrically connected to a scanning terminal, a data line and the first node respectively, and is configured to write a data voltage provided by the data line into the first node under the control of a scanning signal provided by the scanning terminal.
Optionally, the pixel circuit further includes a second energy storage circuit: wherein the third node is electrically connected to the second node through the second energy storage circuit: a first terminal of the second energy storage circuit is electrically connected to the third node, a second terminal of the second energy storage circuit is electrically connected to the second node, and the second energy storage circuit is configured to store electrical energy.
Optionally, the pixel circuit further includes a third setting circuit; wherein the third setting circuit is electrically connected to a third control terminal, a third setting voltage terminal and the third node respectively, and is configured to write a third setting voltage provided by the third setting voltage terminal into the third node under the control of a third control signal provided by the third control terminal.
Optionally, the first control terminal and the second control terminal are a same control terminal.
Optionally, the pixel circuit further includes a data writing-in circuit; wherein the data writing-in circuit is electrically connected to the scanning terminal, the data line and the first node respectively, and is configured to write the data voltage provided by the data line into the first node under the control of the scanning signal provided by the scanning terminal: the third control terminal and the scanning terminal are a same control terminal.
Optionally, the pixel circuit further includes a fourth setting circuit; wherein the fourth setting circuit is electrically connected to a fourth control terminal, a fourth setting voltage terminal and the second node respectively, and is configured to write a fourth setting voltage provided by the fourth setting voltage terminal into the second node under the control of a fourth control signal provided by the fourth control terminal.
Optionally, the first control terminal and the fourth control terminal are a same control terminal.
Optionally, the pixel circuit includes a third setting circuit and a fourth setting circuit: the third setting circuit is electrically connected to a third control terminal, a third setting voltage terminal and a third node respectively, and is configured to write a third setting voltage provided by the third setting voltage terminal into the third node under the control of a third control signal provided by the third control terminal: the fourth setting circuit is electrically connected to a fourth control terminal, the third node and the second node respectively, and is configured to connect the third node and the second node under the control of the fourth control signal provided by the fourth control terminal: the second setting voltage terminal and the third setting voltage terminal are a same setting voltage.
Optionally, the pixel circuit further comprises a first control circuit; the first terminal of the first energy storage circuit is electrically connected to the first node through the first control circuit: the first terminal of the first energy storage circuit is directly electrically connected to a fourth node: the first control circuit is electrically connected to a fifth control terminal, and is configured to control to connect the first node and the fourth node under the control of a fifth control signal provided by the fifth control terminal.
Optionally, the pixel circuit further includes a data writing-in circuit; wherein the data writing-in circuit is electrically connected to the scanning terminal, the data line and the fourth node respectively, and is configured to write the data voltage provided by the data line into the fourth node under the control of the scanning signal provided by the scanning terminal.
Optionally, the second setting voltage terminal is electrically connected to the first node.
Optionally, the first setting voltage terminal is electrically connected to the third node.
Optionally, the first setting voltage terminal and the first voltage terminal are a same voltage terminal.
Optionally, the pixel circuit further includes a second control circuit; wherein the second control circuit is electrically connected to the light emitting control terminal, the second terminal of the driving circuit and the first electrode of the light emitting element respectively, and is configured to control to connect the second terminal of the driving circuit and the first electrode of the light emitting element under the control of the light emitting control signal.
Optionally, the pixel circuit further includes a fourth setting circuit; wherein the fourth setting circuit is electrically connected to the fourth control terminal, the fourth setting voltage terminal and the second node respectively, and is configured to write the fourth setting voltage provided by the fourth setting voltage terminal into the second node under the control of the fourth control signal provided by the fourth control terminal; the second setting voltage terminal and the fourth setting voltage terminal are a same voltage terminal.
Optionally, the second voltage terminal and the fourth setting voltage terminal are a same voltage terminal.
Optionally, the pixel circuit further includes a fourth setting circuit: the fourth setting circuit is electrically connected to the fourth control terminal, the fourth setting voltage terminal and the second node respectively, and is configured to write the fourth setting voltage provided by the fourth setting voltage terminal into the second node under the control of the fourth control signal provided by the fourth control terminal: the fourth control terminal and the scanning terminal are a same control terminal.
Optionally, the third node is electrically connected to the fourth setting voltage terminal.
In a second aspect, an embodiment of the present disclosure provides a driving method, applied to the pixel circuit, including: controlling, by the light emitting control circuit, to connect the first voltage terminal and the first terminal of the driving circuit under the control of the light emitting control signal: controlling, by the driving circuit, to connect the first voltage terminal and the first electrode of the light emitting element under the control of the potential of the first node: controlling, by the first setting circuit, to connect the first setting voltage terminal and the first node under the control of the first control signal: controlling, by the second setting circuit, to connect the second setting voltage terminal and the first energy storage circuit under the control of the second control signal.
In a third aspect, an embodiment of the present disclosure provides a display device including the pixel circuit.
The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only some of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of this disclosure.
The transistors used in all embodiments of the present disclosure may be thin film transistors, field effect transistors, or other devices with the same characteristics. In the embodiment of the present disclosure, in order to distinguish the two electrodes of the transistor except the gate electrode, one electrode is called the first electrode and the other electrode is called the second electrode.
In actual operation, when the transistor is a thin film transistor or a field effect transistor, the first electrode may be a drain electrode, and the second electrode may be a source electrode: or, the first electrode may be a source electrode, the second electrode may be a drain electrode.
As shown in
The light emitting control circuit 14 is electrically connected to a light emitting control terminal EM, a first voltage terminal V1 and a first terminal of the driving circuit 10 respectively, and is configured to control to connect the first voltage terminal V1 and the first terminal of the driving circuit 10 under the control of a light emitting control signal provided by the light emitting control terminal EM;
A control terminal of the driving circuit 10 is electrically connected to a first node N1, and a second terminal of the driving circuit 10 is electrically connected to a first electrode of the light emitting element E1. The driving circuit 10 is configured to control to connect the first voltage terminal V1 and the first electrode of the light emitting element E1 under the control of the potential of the first node N1;
The first electrode of the light emitting element E1 is electrically connected to a second node N2; a second electrode of the light emitting element E1 is electrically connected to a second voltage terminal V2;
A first terminal of the first energy storage circuit 11 is electrically connected to the first node N1, and a second terminal of the first energy storage circuit 11 is electrically connected to a third node N3. The first energy storage circuit 11 is configured to store electrical energy: the second node N2 is electrically connected to the third node N3;
The first setting circuit 12 is electrically connected to a first control terminal R1, a first setting voltage terminal I1 and the first node N1 respectively, and is configured to control to connect the first setting voltage terminal I1 and the first node N1 under the control of the first control signal provided by the first control terminal R1;
The second setting circuit 13 is electrically connected to a second control terminal R2, a second setting voltage terminal I2 and a second terminal of the first energy storage circuit 11 respectively, and is configured to control to connect the second setting voltage terminal I2 and the second terminal of the first energy storage circuit 11 under the control of the second control signal provided by the second control terminal R2.
The pixel circuit described in the embodiment of the present disclosure can implement Pulse Width Modulation (PWM) control by using the light emitting control circuit 14.
When the pixel circuit according to the embodiment of the present disclosure is working, in the light emitting phase, the light emitting control signal provided by the light emitting control terminal EM can be a PWM signal. By adjusting the duty ratio and frequency of the PWM signal, the light emitting brightness can be adjusted.
When the pixel circuit described in the embodiment of the present disclosure is working, the threshold compensation phase and the data writing-in phase are performed separately, the compensation is sufficient, and the threshold voltage compensation time is not limited to the data writing-in phase, so that the high-frequency refresh effect can be achieved.
In at least one embodiment of the present disclosure, the first setting voltage provided by the first setting voltage terminal I1 and the second setting voltage provided by the second setting voltage terminal I2 may be the same voltage or may be different voltages.
When the embodiment of the pixel circuit shown in
The first setting circuit 12 can set the potential of the first node N1 through the first setting voltage Vi1 provided by the first setting voltage terminal I1 under the control of the first control signal;
The second setting circuit 13 sets the potential of the second terminal of the first energy storage circuit 11 through the second setting voltage Vi2 provided by the second setting voltage terminal I2 under the control of the second control signal.
Optionally, the first voltage terminal may be a power supply voltage terminal, and the second voltage terminal may be a low voltage terminal, but is not limited thereto.
The pixel circuit according to at least one embodiment of the present disclosure further includes a data writing-in circuit;
The data writing-in circuit is electrically connected to a scanning terminal, a data line and the first node respectively, and is configured to write the data voltage provided by the data line into the first node under the control of the scanning signal provided by the scanning terminal.
In specific implementation, the pixel circuit may further include a data writing-in circuit, which writes the data voltage to the first node under the control of the scanning signal.
As shown in
The data writing-in circuit 21 is electrically connected to the scanning terminal G1, the data line DA and the first node N1 respectively, and is configured to write the data voltage Vdata provided by the data line DA into the first node N1 under the control of the scanning signal provided by the scanning terminal G1.
The pixel circuit according to at least one embodiment of the present disclosure further includes a second energy storage circuit;
The third node is electrically connected to the second node through the second energy storage circuit;
A first terminal of the second energy storage circuit is electrically connected to the third node, a second terminal of the second energy storage circuit is electrically connected to the second node, and the second energy storage circuit is configured to store electrical energy.
During specific implementation, the pixel circuit described in at least one embodiment of the present disclosure may further include a second energy storage circuit, and the third node is electrically connected to the second node through the second energy storage circuit. By adding the second energy storage circuit, when the potential of the first node N1 changes, the potential of the second node N2 will not be affected.
As shown in
The third node N3 is electrically connected to the second node N2 through the second energy storage circuit 31;
The first terminal of the second energy storage circuit 31 is electrically connected to the third node N3, the second terminal of the second energy storage circuit 31 is electrically connected to the second node N2, and the second energy storage circuit 31 is configured to store electrical energy.
In at least one embodiment of the present disclosure, adding a second energy storage circuit can better isolate the first and second nodes and prevent interference between the two nodes: in addition, when the second setting circuit is turned off, the second energy storage circuit and the first energy storage circuit form a storage circuit with stronger storage capacity.
The pixel circuit according to at least one embodiment of the present disclosure further includes a third setting circuit;
The third setting circuit is electrically connected to the third control terminal, a third setting voltage terminal and a third node respectively, and is configured to write the second setting voltage provided by the second setting voltage terminal into the third node under the control of the third control signal provided by the third control terminal.
During specific implementation, the pixel circuit according to at least one embodiment of the present disclosure may further include a third setting circuit. The third setting circuit writes the third setting voltage into the third node under the control of the third setting control signal.
The pixel circuit according to at least one embodiment of the present disclosure writes the third setting voltage into the third node through the third setting circuit under the control of the third setting control signal, the third node has a stable voltage, so that he potential of the second node is stable.
As shown in
The third setting circuit 41 is electrically connected to the third control terminal R3, the third setting voltage terminal I3 and the third node N3 respectively, is configured to write the third setting voltage provided by the third setting voltage terminal I3 into the third node N3 under the control of the third control signal provided by the third control terminal R3.
In at least one embodiment of the present disclosure, the third setting voltage may be the same as the first setting voltage and the second setting voltage, but is not limited thereto. In actual operation, the first setting voltage, the second setting voltage and the third setting voltage may also be different from each other.
In at least one embodiment of the present disclosure, the first control terminal and the second control terminal are the same control terminal.
The pixel circuit according to at least one embodiment of the present disclosure further includes a data writing-in circuit;
The data writing-in circuit is electrically connected to the scanning terminal, the data line and the first node respectively, and is configured to write the data voltage provided by the data line into the first node under the control of the scanning signal provided by the scanning terminal;
The third control terminal and the scanning terminal are the same control terminal.
In specific implementation, the pixel circuit may also include a data writing-in circuit. The data writing-in circuit writes the data voltage into the first node under the control of the scanning signal. The third control terminal and the scanning terminal may be the same control terminal to reduce the number of control terminals.
As shown in
The data writing-in circuit 21 is electrically connected to the scanning terminal G1, the data line DA and the first node N1 respectively, and is configured to write the data voltage Vdata provided by the data line DA into the first node N1 under the control of the scanning signal provided by the scanning terminal G1.
The third control terminal and the scanning terminal G1 are the same control terminal;
The third setting circuit 41 is electrically connected to the scanning terminal G1, the third setting voltage terminal I3 and the third node N3 respectively, and is configured to write the third setting voltage provided by the third setting voltage terminal I3 into the third node N3 under the control of the scanning signal provided by the scanning terminal G1.
The pixel circuit according to at least one embodiment of the present disclosure further includes a fourth setting circuit;
The fourth setting circuit is electrically connected to a fourth control terminal, a fourth setting voltage terminal and the second node respectively, and is configured to write the fourth setting voltage provided by the fourth setting voltage terminal into the second node under the control of the fourth control signal provided by the fourth control terminal.
In specific implementation, the pixel circuit may further include a fourth setting circuit. Under the control of the fourth control signal, the fourth setting circuit writes the fourth setting voltage into the second node, so that in the initialization phase before the threshold voltage compensation phase, the potential of the second node is set.
As shown in
The fourth setting circuit 61 is electrically connected to the fourth control terminal R4, the fourth setting voltage terminal I4 and the second node N2 respectively, and is configured to write the fourth setting voltage provided by the fourth setting voltage terminal I4 into the second node N2 under the control of the fourth control signal provided by the fourth control terminal R4.
In at least one embodiment of the present disclosure, the first control terminal and the fourth control terminal are the same control terminal to reduce the number of control terminals.
In at least one embodiment of the present disclosure, the pixel circuit includes a third setting circuit and a fourth setting circuit;
The third setting circuit is electrically connected to the third control terminal, the third setting voltage terminal and the third node respectively, and is configured to write the third setting voltage provided by the third setting voltage terminal into the third node under the control of the third control signal provided by the third control terminal;
The fourth setting circuit is electrically connected to the fourth control terminal, the fourth setting voltage terminal and the second node respectively, and is configured to write the fourth setting voltage provided by the fourth setting voltage terminal into the second node under the control of the fourth control signal provided by the fourth control terminal;
The second setting voltage terminal, the third setting voltage terminal and the fourth setting voltage terminal are the same setting voltage.
As shown in
The third setting circuit 41 is electrically connected to the third control terminal R3, the third setting voltage terminal I3 and the third node N3 respectively, and is configured to write the third setting voltage provided by the third setting voltage terminal I3 into the third node N3 under the control of the third control signal provided by the third control terminal R3;
The fourth setting circuit 61 is electrically connected to the fourth control terminal R4, the third node N3 and the second node N2 respectively, and is configured to connect the third node N3 and the second node N2 under the control of the fourth control signal provided by the fourth control terminal;
The second setting voltage terminal I2 and the third setting voltage terminal I3 are the same setting voltage terminal;
The pixel circuit according to at least one embodiment of the present disclosure further includes a data writing-in circuit 21;
The data writing-in circuit 21 is electrically connected to the scanning terminal G1, the data line DA and the first node N1 respectively, and is configured to write the data voltage Vdata provided by the data line DA into the first node N1 under the control of the scanning signal provided by the scanning terminal G1.
As shown in
The gate electrode of T3 is electrically connected to the first node N1;
The gate electrode of T2 is electrically connected to the scanning terminal G1, the source electrode of T2 is electrically connected to the data line DA, and the drain electrode of T2 is electrically connected to the first node N1;
The gate electrode of T1 is electrically connected to the first control terminal R1, the source electrode of T1 is electrically connected to the first initial voltage terminal VI1, and the drain electrode of T1 is electrically connected to the first node N1; the first initial voltage terminal VI1 is configured to provide first initial voltage Vint1;
The gate electrode of T5 is electrically connected to the light emitting control terminal EM, the source electrode of T5 is electrically connected to the power supply voltage terminal ELVDD, and the drain electrode of T5 is electrically connected to the drain electrode of T3; the power supply voltage terminal ELVDD is configured to provide the power supply voltage Vdd;
The gate electrode of T6 is electrically connected to the second control terminal R2, the source electrode of T6 is electrically connected to the second initial voltage terminal V12, and the drain electrode of T6 is electrically connected to the third node N3; the second initial voltage terminal V12 is configured to provide the second initial voltage Vint2;
The first terminal of C1 is electrically connected to the first node N1, and the second terminal of C1 is electrically connected to the third node N3;
The second node N2 is electrically connected to the third node N3;
The source electrode of T3 is electrically connected to the anode of the organic light emitting diode O1;
The cathode of the organic light emitting diode O1 is electrically connected to the low voltage terminal ELVSS.
As shown in
In the initialization phase S1, EM provides a low voltage signal, R1 provides a high voltage signal, R2 provides a high voltage signal, G1 provides a low voltage signal, T5 is turned off, T1 and T6 are both turned on, T2 is turned off, and the drain electrode of T3 is connected to ELVDD, the potential of N1 is Vint1, and the potential of N2 is Vint2 to initialize the potential of the gate electrode of T3 and the potential of the anode of O1;
In the threshold voltage compensation phase S2, EM provides a high voltage signal, R1 provides a low voltage signal, R2 provides a high voltage signal, T5 is turned on, and the drain electrode of T3 is connected to ELVDD;
At the beginning of the threshold voltage compensation phase S2, T3 is turned on, ELVDD charges C1 through T5 and T3 that are turned on, and the potential of N2 becomes Vint1−Vth, Vth is the threshold voltage of T3, and T3 is turned off;
In the data writing-in phase S3, EM provides a low voltage signal, both R1 and R2 provide low voltage signals, G1 provides a high voltage signal, and T2 is turned on to write the data voltage provided by DA to the first node N1, and the capacitance value of C1 is far less than the capacitance value of the parasitic capacitance between the cathode of the organic light emitting diode O1 and the second terminal of C1, the voltage change at the gate electrode of T3 does not affect the potential of the source electrode of T3, and the potential of N2 is maintained at Vint1−Vth;
In the light emitting phase S4, EM provides a high voltage signal, R1, R2 and G1 all provide low voltage signals. T5 is turned on, T3 drives O1 to emit light, the gate-source voltage of T3 remains at Vdata−Vint1+Vth, and the driving current flowing through T3 is related to Vdata−Vint1 and is not related to Vth.
In at least one embodiment of the present disclosure, based on at least one embodiment of the pixel circuit shown in
The driving circuit includes a driving transistor T3, the first setting circuit includes a first transistor T1, the data writing-in circuit includes a second transistor T2, the fourth setting circuit includes a fourth transistor T4, and the light emitting circuit includes a fifth transistor T5, the second setting circuit includes a sixth transistor T6, and the third setting circuit includes a seventh transistor T7: the first energy storage circuit includes a first capacitor C1, the second energy storage circuit includes a second capacitor C2; the light emitting element is an organic light emitting diode O1;
The gate electrode of T3 is electrically connected to the first node N1;
The gate electrode of T2 is electrically connected to the scanning terminal G1, the source electrode of T2 is electrically connected to the data line DA, and the drain electrode of T2 is electrically connected to the first node N1;
The gate electrode of T1 is electrically connected to the first control terminal R1, the source electrode of T1 is electrically connected to the reference voltage terminal RF, and the drain electrode of T1 is electrically connected to the first node N1; the reference voltage terminal RF is configured to provide the reference voltage Vref;
The gate electrode of T4 is electrically connected to the fourth control terminal R4, the source electrode of T4 is electrically connected to the initial voltage terminal I0, and the drain electrode of T4 is electrically connected to the second node N2; the initial voltage terminal I0 is configured to provide the initial voltage Vint;
The gate electrode of T5 is electrically connected to the light emitting control terminal EM, the source electrode of T5 is electrically connected to the power supply voltage terminal ELVDD, and the drain electrode of T5 is electrically connected to the drain electrode of T3; the power supply voltage terminal ELVDD is configured to provide the power supply voltage Vdd;
The gate electrode of T6 is electrically connected to the first control terminal R1, the source electrode of T6 is electrically connected to the reference voltage terminal RF, and the drain electrode of T6 is electrically connected to the third node N3;
The gate electrode of T7 is electrically connected to the scanning terminal G1, the source electrode of T7 is electrically connected to the reference voltage terminal RF, and the drain electrode of T7 is electrically connected to the third node N3;
The first terminal of C1 is electrically connected to the first node N1, and the second terminal of C1 is electrically connected to the third node N3;
The first terminal of C2 is electrically connected to the third node N3, and the second terminal of C2 is electrically connected to the second node N2;
The source electrode of T3 is electrically connected to the anode of the organic light emitting diode O1;
The cathode of the organic light emitting diode O1 is electrically connected to the low voltage terminal ELVSS.
In at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
When at least one embodiment of the pixel circuit shown in
In the initialization phase and threshold voltage compensation phase, R1 provides a high voltage signal, T1 and T6 are turned on, and the reference voltage Vref is configured to stabilize the voltage of N1; Vref-Vdd is less than the threshold voltage Vth of T3, Vref-Vint is greater than Vth, and Vref is configured to stabilize the potential of N3;
In the data writing-in phase, G1 provides a high voltage signal, T2 is turned on, T7 is turned on, and Vref is written to N3 to stabilize the potential of N3; N1 and N2 are separated from each other by N3, and the potential of N2 will not be affected by signal writing.
In actual operation, a stable voltage other than Vref can be configured to stabilize the potential of N3. For example, the power supply voltage provided by ELVDD, the low voltage provided by ELVSS, and the initial voltage Vint provided by I0 can be configured to stabilize the potential of N3.
As shown in
In the initialization phase S1, EM provides a low voltage signal, R1 provides a high voltage signal, R4 provides a high voltage signal, G1 provides a low voltage signal, T1 and T6 are turned on, the potential of N1 is Vref, the potential of N3 is Vref, T4 is turned on, and the potential of N2 is Vint: by initializing the potential of each node, T3 can be turned on at the beginning of the threshold voltage compensation phase S2;
In the threshold voltage compensation phase S2, EM provides a high voltage signal, R1 provides a high voltage signal, R4 provides a low voltage signal, G1 provides a low voltage signal, T1 is turned on, the potential of N1 is Vref, T5 is turned on, T6 is turned on, and the potential of N3 is Vref;
At the beginning of the threshold voltage compensation phase S2, T3 is turned on, and ELVDD charges C1 and C2 through T5 and T3 that are turned on to change the potential of N2 until the potential of N2 becomes Vref-Vth and T3 is turned off;
In the data writing-in phase S3, EM provides a low voltage signal, R1 provides a low voltage signal, R4 provides a low voltage signal, G1 provides a high voltage signal, DA provides the data voltage Vdata, T2 is turned on, and DA provides the data voltage to the first node N1, T7 is turned on, the potential of N3 is Vref, and the potential of N2 is Vref-Vth; due to the existence of C1 and C2, data voltage writing will not affect the potential of N2;
In the light emitting phase S4, EM provides a high voltage signal, R1 provides a low voltage signal, R4 provides a low voltage signal, G1 provides a low voltage signal, T5 is turned on, and T3 drives O1 to emit light;
In the light emitting phase S4, the potential of the anode of O1 is Vel, the potential of N1 becomes Vdata−Vref+Vth+Vel, and the gate-source voltage of T3 is Vdata−Vref+Vth, so that the driving current Ids of T3 driving O1 is not related to Vth;
Ids=K×(Vdata−Vref)2; where K is the current coefficient of T3. From the formula of Ids, it can be seen that the driving current Ids of T3 is not related to the threshold voltage Vth of T3.
When at least one embodiment of the pixel circuit shown in
When the pixel circuit described in at least one embodiment of the present disclosure is working, the threshold voltage compensation phase and the data writing-in phase are separated, so that the time of the threshold voltage compensation phase can be increased and high-frequency refresh can be achieved.
The difference between at least one embodiment of the pixel circuit shown in
As shown in
In the initialization phase S1, EM provides a low voltage signal, R1 provides a high voltage signal, R4 provides a high voltage signal, G1 provides a low voltage signal, T1 and T6 are turned on, the potential of N1 is Vref, the potential of N3 is Vref, T4 is turned on, and the potential of N2 is Vint: by initializing the potential of each node, T3 can be turned on at the beginning of the threshold voltage compensation phase S2;
In the threshold voltage compensation phase S2, EM provides a high voltage signal, R1 provides a high voltage signal, R4 provides a low voltage signal, G1 provides a low voltage signal, T1 is turned on, the potential of N1 is Vref, T5 is turned on, T6 is turned on, and the potential of N3 is Vref;
At the beginning of the threshold voltage compensation phase S2, T3 is turned on, and ELVDD charges C1 and C2 through T5 and T3 that are turned on to change the potential of N2 until the potential of N2 becomes Vref-Vth and T3 is turned off;
In the data writing-in phase S3, EM provides a low voltage signal, R1 provides a low voltage signal, R4 provides a low voltage signal, G1 provides a high voltage signal, DA provides the data voltage Vdata, T2 is turned on, and DA provides the data voltage to the first node N1, T7 is turned on, the potential of N3 is Vref, and the potential of N2 is Vref−Vth; due to the existence of C1 and C2, data voltage writing-in will not affect the potential of N2;
In the light emitting phase S4, EM provides a high-voltage signal, R1 provides a low-voltage signal, R4 provides a low-voltage signal, G1 provides a low-voltage signal, T5 is turned on, and T3 drives O1 to emit light;
In the light emitting phase S4, the potential of the anode of O1 is Vel, the potential of N1 becomes Vdata−Vref+Vth+Vel, and the gate-source voltage of T3 is Vdata−Vref+Vth, so that the driving current Ids of T3 driving O1 is not related to Vth;
Ids=K×(Vdata−Vref)2; where K is the current coefficient of T3. According to the formula of Ids, Ids is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the initialization phase S1, EM provides a low voltage signal, R2 provides a high voltage signal, R1 provides a high voltage signal, G1 provides a low voltage signal, T6 is turned on, the potential of N3 is Vref, T1 is turned on, the potential of N1 is Vref; T4 is turned on, the potential of N2 is Vint; so that when the threshold voltage compensation phase S2 starts, T3 can be turned on;
In the threshold voltage compensation phase S2, EM provides a high voltage signal, R2 provides a high voltage signal, R1 provides a low voltage signal, G1 provides a low voltage signal, T5 is turned on, T6 is turned on, and the potential of N3 is Vref;
At the beginning of the threshold voltage compensation phase S2, ELVDD charges C2 through T5 and T3 that are turned on to increase the potential of N2 until T3 is turned off. At this time, the potential of N2 is Vref−Vth, and Vth is the threshold voltage of T3;
In the data writing-in phase S3, EM provides a low voltage signal, R2 provides a high voltage signal, R1 provides a low voltage signal, G1 provides a high voltage signal, T2 is turned on, DA provides the data voltage Vdata to the first node N1, T6 is turned on, and the potential of N3 is Vref; so that the data voltage writing-in will not affect the potential of N2, the potential of N2 is maintained at Vref−Vth;
In the light emitting phase S4, EM provides a high voltage signal, R2 provides a low voltage signal, R1 provides a low voltage signal, G1 provides a low voltage signal, T5 is turned on, T3 drives O1 to emit light, and the driving current Ids of T3 driving O1 is not related to Vth;
In the light emitting phase S4, the gate-source voltage of T3 is Vdata Vref+Vth, Ids=K(Vdata−Vref)2; Ids is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the initialization phase S1, EM provides a low voltage signal, R2 provides a high voltage signal, R1 provides a high voltage signal, G1 provides a low voltage signal, T6 is turned on, the potential of N3 is Vref, T1 is turned on, and the potential of N1 is Vref; T4 is turned on, and the potential of N2 is Vint: so that T3 is turned on when the threshold voltage compensation phase S2 begins;
In the threshold voltage compensation phase S2, EM provides a high voltage signal, R2 provides a high voltage signal, R1 provides a low voltage signal, G1 provides a low voltage signal, T5 is turned on, and the potential of N3 is Vref;
At the beginning of the threshold voltage compensation phase S2, ELVDD charges C2 through T5 and T3 that are turned on to increase the potential of N2 until T3 is turned off. At this time, the potential of N2 is Vref−Vth, and Vth is the threshold voltage of T3;
In the data writing-in phase S3, EM provides a low voltage signal, R2 provides a high voltage signal, R1 provides a low voltage signal, G1 provides a high voltage signal, T2 is turned on, DA provides data voltage Vdata to the first node N1, T6 is turned on, and the potential of N3 is Vref; so that the writing of data voltage does not affect the potential of N2, and the potential of N2 is maintained at Vref−Vth;
In the light emitting phase S4, EM provides a high voltage signal, R2 provides a low voltage signal, R1 provides a low voltage signal, G1 provides a low voltage signal, T5 is turned on, T3 drives O1 to emit light, and the driving current of T3 driving O1 is not related to Vth;
In the light emitting phase S4, the gate-source voltage of T3 is Vdata Vref+Vth, Ids=K(Vdata−Vref)2; Ids is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the initialization phase S1, EM provides a low voltage signal, R2 provides a high voltage signal, R1 provides a high voltage signal, R4 provides a high voltage signal, G1 provides a low voltage signal, T5 is turned on, T6 is turned on, T1 is turned on, T4 is turned on, and the potential of N1 is Vref, the potential of N3 is Vref, and the potential of N2 is Vint, so that when the threshold voltage compensation phase S2 starts, T3 can be turned on;
In the threshold voltage compensation phase S2, EM provides a high voltage signal, R2 provides a high voltage signal, R1 provides a low voltage signal, R4 provides a low voltage signal, G1 provides a low voltage signal, and T5 is turned on; the potential of N3 is Vref;
At the beginning of the threshold voltage compensation phase S2, T3 is turned on, and ELVDD charges C2 through T5 and T3 that are turned on to increase the potential of N2 until the potential of N2 becomes Vref−Vth, and Vth is the threshold voltage of T3;
In the data writing-in phase S3, EM provides a low voltage signal, R2 provides a high voltage signal, R1 provides a low voltage signal, R4 provides a low voltage signal, G1 provides a high voltage signal, T6 is turned on, the potential of N3 is Vref, T2 is turned on, and DA provides the data voltage Vdata to the first node N1; since the potential of N3 remains unchanged, the potential of N2 is maintained at Vref-Vth, and the potential of N2 is not affected by the writing-in of the data voltage:
In the light emitting phase S4, EM provides a high-voltage signal, R2 provides a low-voltage signal, R1 provides a low-voltage signal, R4 provides a low-voltage signal, G1 provides a low-voltage signal, T5 is turned on, T3 drives O1 to emit light, and the driving current of T3 driving O1 is not related to Vth;
In the light emitting phase S4, the gate-source voltage of T3 is Vdata-Vref+Vth, Ids=K(Vdata−Vref)2; Ids is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the initialization phase S1, EM provides a low voltage signal, R1 provides a high voltage signal, R4 provides a high voltage signal, G1 provides a low voltage signal, T1 and T6 are turned on, the potential of N1 is Vref, the potential of N3 is Vint, T4 is turned on, and the potential of N2 is Vint: by setting the potential of N1 and the potential of N2, T3 can be turned on at the beginning of the threshold voltage compensation phase S2;
In the threshold voltage compensation phase S2, EM provides a high voltage signal, R1 provides a high voltage signal, R4 provides a low voltage signal, G1 provides a low voltage signal, T5 is turned on: T6 is turned on, and the potential of N3 is Vint;
At the beginning of the threshold voltage compensation phase S2, T3 is turned on, and ELVDD charges C2 through T5 and T3 that are turned on until T3 is turned off, at which time the potential of N2 is Vref−Vth;
In the data writing-in phase S3, EM provides a low voltage signal, R1 provides a low voltage signal, R4 provides a low voltage signal, G1 provides a high voltage signal, T2 is turned on, DA provides the data voltage Vdata to the first node N1, T7 is turned on, and the potential of N3 is Vint: data writing will not affect the potential of N2, and the potential of N2 is maintained at Vref−Vth;
In the light emitting phase S4, EM provides a high-voltage signal, R1 provides a low-voltage signal, R4 provides a low-voltage signal, G1 provides a low-voltage signal, T5 is turned on, T3 drives O1 to emit light, and the driving current of T3 driving O1 is not related to Vth;
In the light emitting phase S4, the gate-source voltage of T3 is Vdata-Vref+Vth, Ids=K(Vdata−Vref)2; Ids is not related to Vth.
Optionally, the pixel circuit also includes a first control circuit;
The first terminal of the first energy storage circuit is electrically connected to the first node through a first control circuit;
The first terminal of the first energy storage circuit is directly electrically connected to the fourth node;
The first control circuit is electrically connected to a fifth control terminal, and is configured to control to connect the first node and the fourth node under the control of a fifth control signal provided by the fifth control terminal.
As shown in
The first terminal of the first energy storage circuit 11 is electrically connected to the first node N1 through the first control circuit 181;
The first terminal of the first energy storage circuit 11 is directly electrically connected to the fourth node N4;
The first control circuit 181 is electrically connected to the fifth control terminal R5, and is configured to control to connect the first node N1 and the fourth node N4 under the control of the fifth control signal provided by the fifth control terminal R5.
In at least one embodiment of the present disclosure, adding a first control circuit can better isolate the first node and the second node, and the first control circuit is turned off when necessary to prevent interference between the two nodes.
When the pixel circuit described in the embodiment of the present disclosure is working, after using the source follower threshold voltage compensation, when one terminal of the first energy storage circuit 11 (the first energy storage circuit 11 may include a capacitor) is configured to float, the voltage difference between the two terminals of the energy storage circuit 11 remains unchanged, the threshold voltage compensation is realized.
The pixel circuit according to at least one embodiment of the present disclosure further includes a data writing-in circuit;
The data writing-in circuit is electrically connected to the scanning terminal, the data line and the fourth node respectively, and is configured to write the data voltage provided by the data line into the fourth node under the control of the scanning signal provided by the scanning terminal.
As shown in
The data writing-in circuit 21 is electrically connected to the scanning terminal G1, the data line DA and the fourth node N4 respectively, and is configured to write the data voltage Vdata provided by the data line DA into the fourth node N4 under the control of the scanning signal provided by the scanning terminal G1.
Optionally, the second setting voltage terminal may be electrically connected to the first node.
Optionally, the first setting voltage terminal may be electrically connected to the third node.
In at least one embodiment of the present disclosure, the first setting voltage terminal and the first voltage terminal may be the same voltage terminal to reduce the number of voltage terminals.
The pixel circuit according to at least one embodiment of the present disclosure further includes a second control circuit;
The second control circuit is electrically connected to the light emitting control terminal, the second terminal of the driving circuit and the first electrode of the light emitting element respectively, and is configured to control to connect the second terminal of the driving circuit and the first electrode of the light emitting element under the control of the light emitting control signal.
In specific implementation, the pixel circuit may further include a second control circuit for light emitting control; the second control circuit controls to connect the second terminal of the driving circuit and the first electrode of the light emitting element under the control of the light emitting control signal.
As shown in
The second control circuit 182 is electrically connected to the light emitting control terminal EM, the second terminal of the driving circuit 10 and the first electrode of the light emitting element E1 respectively, and is configured to control to connect the second terminal of the driving circuit 10 and the first electrode of the light emitting element E1 under the control of the light emitting control signal.
The pixel circuit according to at least one embodiment of the present disclosure further includes a fourth setting circuit;
The fourth setting circuit is electrically connected to the fourth control terminal, the fourth setting voltage terminal and the second node respectively, and is configured to write the fourth setting voltage provided by the fourth setting voltage terminal into the second node under the control of the fourth control signal provided by the fourth control terminal;
The second setting voltage terminal and the fourth setting voltage terminal are the same voltage terminal.
In specific implementation, the pixel circuit may further include a fourth setting circuit, and the fourth setting circuit writes the fourth setting voltage into the second node under the control of the fourth control signal.
As shown in
The fourth setting circuit 201 is electrically connected to the fourth control terminal R4, the second setting voltage terminal I2 and the second node N2 respectively, and is configured to write the second setting voltage provided by the second setting voltage terminal I2 into the second node N2 under the control of the fourth control signal provided by the fourth control terminal R4.
In at least one embodiment of the present disclosure, the second voltage terminal and the fourth setting voltage terminal may be the same voltage terminal to reduce the number of voltage terminals.
In at least one embodiment of the present disclosure, the pixel circuit further includes a fourth setting circuit;
The fourth setting circuit is electrically connected to the fourth control terminal, the fourth setting voltage terminal and the second node respectively, and is configured to write the fourth setting voltage provided by the fourth setting voltage terminal into the second node under the control of the fourth control signal provided by the fourth control terminal;
The fourth control terminal and the scanning terminal are the same control terminal.
As shown in
The fourth setting circuit 201 is electrically connected to the scanning terminal G1, the fourth setting voltage terminal I4 and the second node N2 respectively, and is configured to write the fourth setting voltage provided by the fourth setting voltage terminal I4 into the second node N2 under the control of the scanning signal provided by the scanning terminal G1.
In at least one embodiment of the present disclosure, the third node may be electrically connected to the fourth setting voltage terminal.
As shown in
The first terminal of the second energy storage circuit 31 is electrically connected to the third node N3, and the second terminal of the second energy storage circuit 31 is electrically connected to the second node N2;
The second energy storage circuit 31 is configured to store electrical energy.
In at least one embodiment of the present disclosure, adding a second energy storage circuit can better isolate the first node and the second node and prevent interference between the two nodes: in addition, when the second setting circuit is turned off, the second energy storage circuit and the first energy storage circuit may form the storage circuit with stronger storage capacity.
As shown in
The first terminal of the second energy storage circuit 31 is electrically connected to the third node N3, and the second terminal of the second energy storage circuit 31 is electrically connected to the second node N2;
The second energy storage circuit 31 is configured to store electrical energy.
In at least one embodiment of the present disclosure, based on at least one embodiment of the pixel circuit shown in
As shown in
The driving circuit includes a driving transistor T3, the first setting circuit includes a first transistor T1, the data writing-in circuit includes a second transistor T2, the light emitting control circuit includes a fifth transistor T5, and the second setting circuit includes a sixth transistor T6, the first energy storage circuit includes a first capacitor C1, and the light emitting element is an organic light emitting diode O1; the first control circuit includes an eighth transistor T8;
The gate electrode of T3 is electrically connected to the first node N1;
The gate electrode of T1 is electrically connected to the first control terminal R1, the source electrode of T1 is electrically connected to the reference voltage terminal RF, and the drain electrode of T1 is electrically connected to the first node N1; the reference voltage terminal RF is configured to provide the reference voltage Vref;
The gate electrode of T2 is electrically connected to the scan terminal G1, the source electrode of T2 is electrically connected to the data line DA, and the drain electrode of T2 is electrically connected to the fourth node N4;
The gate electrode of T5 is electrically connected to the light emitting control terminal EM, the source electrode of T5 is electrically connected to the power supply voltage terminal ELVDD, and the drain electrode of T5 is electrically connected to the drain electrode of T3; the power supply voltage terminal ELVDD is configured to provide the power supply voltage Vdd;
The gate electrode of T6 is electrically connected to the second control terminal R2, the source electrode of T6 is electrically connected to the initial voltage terminal I0, and the drain electrode of T6 is electrically connected to the third node N3; the initial voltage terminal I0 is configured to provide the initial voltage Vint;
The first terminal of C1 is electrically connected to the fourth node N4, and the second terminal of C1 is electrically connected to the third node N3; the anode of O1 is electrically connected to the second node N2, and the second node N2 and the third node N3 are electrically connected;
The source electrode of T3 is electrically connected to the anode of the organic light emitting diode O1;
The cathode of the organic light emitting diode O1 is electrically connected to the low voltage terminal ELVSS;
The gate electrode of T8 is electrically connected to the fifth control terminal R5, the source electrode of T8 is electrically connected to the first node N1, and the drain electrode of T8 is electrically connected to the fourth node N4.
At least one implementation of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
At least one embodiment of the pixel circuit shown in
As shown in
The display period includes the first phase t1, the second phase t2, the third phase t3 and the fourth phase t4 which are set successively;
In the first phase t1, R5 provides a low voltage signal, EM provides a low voltage signal, R2 provides a high voltage signal, G1 provides a low voltage signal, R1 provides a high voltage signal, T8 and T5 are turned off, T1 is turned on, and T6 is turned on to write the reference voltage Vref provided by RF into the gate electrode of T3, the initial voltage Vint provided by I0 is written into the source electrode of T3, and the gate potential of T3, the potential of the anode of O1 and the potential of the source electrode of T3 are reset;
In the second phase t2, R5 provides a low voltage signal, EM provides a low voltage signal, R2 provides a high voltage signal, G1 provides a high voltage signal, R1 provides a high voltage signal, T6, T8 and T5 are turned off, T2 and T1 are both turned on, the data voltage Vdata provided by the data line DA is written into the fourth node N4, the reference voltage Vref provided by the reference voltage terminal RF is written into the first node N1, and the initial voltage Vin provided by the initial voltage terminal I0 is written into the source electrode of T3;
In the third phase t3, R5 provides a low voltage signal, EM provides a high voltage signal, R2 provides a low voltage signal, G1 provides a high voltage signal, R1 provides a high voltage signal, and DA provides the data voltage Vdata. At this time, T6 is turned off and T1 is turned on, T2 is turned on, the potential of the gate electrode of T3 is Vref; T5 is turned on, the drain electrode of T3 is electrically connected to ELVDD;
At the beginning of the third phase t3, T3 is turned on to charge C1 and increase the potential of the source electrode of T3 until the potential of the source electrode of T3 becomes Vref−Vth and T3 is turned off;
In the fourth phase t4, R5 provides a high voltage signal, EM provides a high voltage signal, T8, T5 and T3 are turned on, the drain electrode of T3 is electrically connected to ELVDD, the potential of N1 is equal to the potential of N4, because N1 is in a floating state, before and after T3 is turned on, the voltage difference across C1 remains unchanged. At this time, the difference between the potential of the first node and the source electrode of T3 is Vdata−Vref+Vth, and the gate-source voltage of T3 is Vdata−Vref+Vth, the current flowing through O1 is K(Vdata−Vref)2; among them, K is the current coefficient of T3; from the above formula, it can be seen that since Vref is a fixed voltage, the drain-source current Ids provided to O1 can be determined correspondingly by the data voltage Vdata; the current flowing through O1 is not related to the threshold voltage of the driving transistor and the power supply voltage provided by ELVDD, and can perform threshold voltage compensation;
In the fourth phase t4, Ids is equal to K(Vdata−Vref)2; Ids is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
Compared with at least one embodiment of the pixel circuit shown in
As shown in
In the pre-phase t0, R5 provides a low voltage signal, EM provides a high voltage signal, R2 provides a high voltage signal, G1 provides a low voltage signal, R1 provides a high voltage signal, T8 is turned off, T5 is turned on, T6 is turned on, and T2 is turned off. T1 is turned on to write the reference voltage Vref provided by RF into the first node N1, control the drain electrode of T3 to be electrically connected to ELVDD, and write the initial voltage Vint provided by I0 into the source electrode of T3;
In the first phase t1, R5 provides a low voltage signal, EM provides a low voltage signal, R2 provides a high voltage signal, G1 provides a low voltage signal, R1 provides a high voltage signal, T8, T5 and T9 are turned off, T1 is turned on, and T6 is turned on, to write the reference voltage Vref provided by RF into the gate electrode of T3, write the initial voltage Vint provided by I0 into the source electrode of T3, and reset the potential of the gate electrode of T3, the potential of the anode of O1 and the potential of the source electrode of T3;
In the second phase t2, R5 provides a low voltage signal, EM provides a low voltage signal, R2 provides a high voltage signal, G1 provides a high voltage signal, R1 provides a high voltage signal, T6, T8, T5 and T9 are turned off, and both T2 and T1 are turned on to write the data voltage Vdata provided by the data line DA into the fourth node N4, write the reference voltage Vref provided by the reference voltage terminal RF into the first node N1, and write the initial voltage Vin provided by the initial voltage terminal I0 into the source electrode of T3;
In the third phase t3, R5 provides a low voltage signal, EM provides a high voltage signal, R2 provides a low voltage signal, G1 provides a high voltage signal, R1 provides a high voltage signal, and DA provides the data voltage Vdata. At this time, T6 is turned off and T1 is turned on, T2 is turned on, the potential of the gate electrode of T3 is Vref; T5 and T9 are turned on, the drain electrode of T3 is electrically connected to ELVDD, and the source electrode of T3 is electrically connected to the anode of O1;
At the beginning of the third phase t3, T3 is turned on to charge C1 and increase the potential of the source electrode of T3 until the potential of the source electrode of T3 becomes Vref−Vth and T3 is turned off;
In the fourth phase t4, R5 provides a high voltage signal, EM provides a high voltage signal, T8, T5, T9 and T3 are turned on, the drain electrode of T3 is electrically connected to ELVDD, the source electrode of T3 is electrically connected to the anode of O1, and the potential of N1 is equal to that of N4. Since N1 is in a floating state, the voltage difference across C1 remains unchanged before and after T3 is turned on. At this time, the difference between the potential of the first node and the potential of the source electrode of T3 is Vdata−Vref+Vth, the gate-source voltage of T3 is Vdata−Vref+Vth, and the current flowing through O1 is K(Vdata−Vref) 2; where K is the current coefficient of T3; from the above formula, it can be seen that since Vref is a fixed voltage, the drain-source current Ids supplied to O1 can be determined corresponding to the data voltage Vdata: the current flowing through O1 is not related to the threshold voltage of the driving transistor and the power supply voltage provided by ELVDD, and can perform threshold voltage compensation;
In the fourth phase t4, Ids is equal to K(Vdata−Vref)2; Ids is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the first phase t1, R5 provides a low voltage signal, EM provides a low voltage signal, R0 provides a high voltage signal, G1 provides a high voltage signal, DA provides the data voltage Vdata, T5 is turned off, and T1 is turned on to write the reference voltage Vref provided by RF into the gate electrode of T3, T8 is turned off, T2 is turned on to write the data voltage Vdata into the fourth node N4, T6 is turned on to write the reference voltage Vref into the third node N3, and T10 is turned on to write Vint into the source electrode of T3;
In the second phase t2, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G1 provides a low voltage signal, T1 is turned on to write Vref into the gate electrode of T3, and T6 is turned on to write Vref into the third node N3; T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
At the beginning of the second phase t2, T3 is turned on, and T3 performs threshold voltage compensation in a source following manner. The potential of the source electrode of T3 continues to increase from Vint until the potential of the source of T3 becomes Vref−Vth, at this time threshold voltage compensation is finished, T3 is turned off: at this time, the difference between the potential of N2 and the potential of the source electrode of T3 is Vdata-(Vref−Vth);
In the third phase t3, R5 provides a high voltage signal, EM provides a high voltage signal, R0 provides a low voltage signal, G1 provides a low voltage signal, T8 and T5 are turned on, and the drain electrode of T3 is electrically connected to ELVDD;
The potential of the gate electrode of T3 is Vdata, and the gate-source voltage of T3 is Vdata−Vref+Vth; at this time, the current Ioled flowing through O1 is equal to K(Vdata−Vref)2; where K is the current coefficient of T3. Referring to the above equation, the current Ioled supplied by the driving transistor T3 to O1 can be determined based on the voltage difference between Vdata and Vref; since Vref is a fixed voltage, Ioled can be determined based on Vdata: Ioled is equal to the driving current Ids of T3 driving O1;
In the third phase t3, Ioled is equal to K(Vdata−Vref)2; Ioled is not related to Vth.
When at least one embodiment of the pixel circuit shown in
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the first phase t1, R5 provides a low voltage signal, EM provides a low voltage signal, R0 provides a high voltage signal, G1 provides a high voltage signal, DA provides the data voltage Vdata, and T1 is turned on to write the reference voltage Vref provided by RF into the gate electrode of T3, T8 and T5 are turned off, T2 is turned on to write the data voltage Vdata into the second node N2, and T6 is turned on to control to connect the first node N1 and the third node N3, so that the potential of the third node N3 is Vref; T10 is turned on to write Vint into the source electrode of T3;
In the second phase t2, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G1 provides a low voltage signal, T5 is turned on, the drain electrode of T3 is electrically connected to ELVDD, and T1 is turned on to write Vref into the gate electrode of T3, T6 is turned on to control to connect the first node N1 and the third node N3, so that the potential of the third node N3 is Vref;
At the beginning of the second phase t2, T3 is turned on, and T3 compensates for the threshold voltage in a source following manner. The potential of the source electrode of T3 continues to increase from Vint until the source potential of T3 becomes Vref−Vth, at this time, the threshold voltage compensation is finished, T3 is turned off, at this time, the difference between the potential of N2 and the potential of the source electrode of T3 is Vdata−(Vref−Vth);
In the third phase t3, R5 and EM provide high voltage signals, R0 provides low voltage signals, G1 provides low voltage signals, T8 and T5 are turned on, the drain electrode of T3 is electrically connected to ELVDD, the potential of the gate electrode of T3 is Vdata, and the gate-source voltage is Vdata−Vref+Vth; at this time, the current Ioled flowing through O1 is equal to K(Vdata−Vref)2; where K is the current coefficient of T3. Referring to the above equation, the current Ioled supplied by the driving transistor T3 to O1 can be determined based on the voltage difference between Vdata and Vref; since Vref is a fixed voltage, Ioled can be determined based on Vdata: Ioled is equal to the driving current Ids of T3 driving O1;
In the third phase t3, Ioled is equal to K(Vdata−Vref)2; Ioled is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the first phase t1, R5 and EM provide low voltage signals, R0 provides high voltage signals, G1 provides high voltage signals, DA provides data voltage Vdata, and T6 is turned on to write the reference voltage Vref provided by RF into the third node N3, T8 and T5 are turned off, T2 is turned on to write the data voltage Vdata into the second node N2, and T1 is turned on to control to connect the first node N1 and the third node N3, so that the potential of the first node N1 is Vref; T10 is turned on to write Vint to the source electrode of T3;
In the second phase t2, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G1 provides a low voltage signal, T6 is turned on to write Vref into the third node N3, and T1 is turned on to control to connect the first The node N1 and the third node N3, so that the potential of the first node N1 is Vref; T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
At the beginning of the second phase t2, T3 is turned on, and T3 performs threshold voltage compensation in a source following manner. The potential of the source electrode of T3 continues to increase from Vint until the potential of the source electrode of T3 becomes Vref−Vth, threshold voltage compensation is finished, T3 is turned off: at this time, the difference between the potential of N4 and the potential of the source electrode of T3 is Vdata−(Vref−Vth);
In the third phase t3, R5 and EM provide high voltage signals, R0 provides low voltage signals, G1 provides low voltage signals, T8 and T5 are turned on, the drain electrode of T3 is electrically connected to ELVDD, the potential of the gate electrode T3 is Vdata, and the gate-source voltage is Vdata−Vref+Vth; at this time, the current Ioled flowing through O1 is equal to K(Vdata−Vref)2; K is the current coefficient of T3. Referring to the above equation, the current Ioled supplied by the driving transistor T3 to O1 can be determined based on the voltage difference between Vdata and Vref; since Vref is a fixed voltage, Ioled can be determined based on Vdata; Ioled is equal to the driving current Ids of T3 driving O1;
In the third phase t3, Ioled is equal to K(Vdata−Vref)2; Ioled is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the first phase t1, R5 and EM provide low voltage signals, R0 provides high voltage signals, G2 provides high voltage signals, G1 provides low voltage signals, DA provides data voltage Vdata, and T1 is turned on to write the power voltage Vdd provided by the power supply voltage terminal ELVDD into the gate electrode of T3, T8 and T5 are turned off, T2 is turned off, T6 is turned on to write the initial voltage Vint provided by I0 to the third node N3, and T10 is turned on to write Vint to the source electrode of T3;
In the second phase t2, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G1 provides a low voltage signal, and T1 is turned on to write the power supply voltage provided by the power supply voltage terminal ELVDD into the gate electrode of T3, T6 is turned on to write the initial voltage Vint into the third node N3; T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
At the beginning of the second phase t2, T3 is turned on, and T3 performs threshold voltage compensation in a source following manner. The potential of the source electrode of T3 continues to increase from Vint until the potential of the source electrode T3 becomes Vdd-Vth, at this time the threshold voltage compensation is finished, T3 is turned off;
In the third phase t3, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G2 provides a low voltage signal, G1 provides a high voltage signal, and T2 is turned on to write the data voltage Vdata into the fourth node N4; at this time, the difference between the potential of N4 and the potential of the source electrode of T3 is Vdata−(Vdd-Vth); T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
In the fourth phase t4, R5 and EM provide high voltage signals, R0 provides low voltage signals, G1 provides low voltage signals, G2 provides low voltage signals, T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD: T8 is turned on, and the potential of the gate electrode of T3 is Vdata, and the gate-source voltage of T3 is Vdata−Vdd+Vth; at this time, the current Ioled flowing through O1 is equal to K(Vdata−Vdd)2; where K is the current coefficient of T3. Referring to the above equation, the current Ioled supplied by the driving transistor T3 to O1 can be determined according to the voltage difference between Vdata and Vdd; since Vdd is a fixed voltage, Ioled can be determined correspondingly according to Vdata; Ioled is equal to the driving current of T3 driving O1;
In the fourth phase t4, Ioled is equal to K(Vdata−Vdd)2; Ioled is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the first phase t1, R5 and EM provide low voltage signals, R0 provides high voltage signals, G2 provides high voltage signals, G1 provides low voltage signals, DA provides data voltage Vdata, and T1 is turned on to write the power voltage Vdd provided by the power supply voltage terminal ELVDD into the gate electrode of T3, T8 and T5 are turned off, T2 is turned off, T6 is turned on to write the initial voltage Vint provided by I0 into the third node N3, and T10 is turned on to write Vint into the source electrode of T3;
In the second phase t2, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G1 provides a low voltage signal, and T1 is turned on to write the power supply voltage Vdd provided by the power supply voltage terminal ELVDD into the gate electrode of T3, T6 is turned on to write Vint into the third node N3; T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
At the beginning of the second phase t2, T3 is turned on, and T3 performs threshold voltage compensation in a source following manner. The potential of the source electrode of T3 continues to increase from Vint until the potential of the source electrode of T3 becomes Vdd-Vth, at this time the threshold voltage compensation is finished, T3 is turned off;
In the third phase t3, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G2 provides a low voltage signal, G1 provides a high voltage signal, and T2 is turned on to write the data voltage Vdata into the fourth node N4; at this time, the difference between the potential of N4 and the potential of the source electrode of T3 is Vdata−(Vdd−Vth); T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
In the fourth phase t4, R5 and EM provide high voltage signals, R0 provides low voltage signals, G1 provides low voltage signals, G2 provides low voltage signals, T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD: T8 is turned on, and the potential of the gate electrode of T3 is Vdata, and the gate-source voltage of T3 is Vdata−Vdd+Vth; at this time, the current Ioled flowing through O1 is equal to K(Vdata−Vdd)2; where K is the current coefficient of T3. Referring to the above equation, the current Ioled supplied by the driving transistor T3 to O1 can be determined based on the voltage difference between Vdata and Vdd; since Vdd is a fixed voltage, Ioled can be determined based on Vdata: Ioled is equal to the driving current Ids of T3 driving O1;
In the fourth phase t4, Ioled is equal to K(Vdata−Vdd)2; Ioled is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the first phase t1, R5 and EM provide low voltage signals, R0 provides high voltage signals, G2 provides high voltage signals, G1 provides low voltage signals, DA provides data voltage Vdata, and T1 is turned on to write the power supply voltage Vdd provided by ELVDD into the gate electrode of T3, T8 and T5 are turned off, T2 is turned off, T6 is turned on to write the low voltage signal provided by ELVSS into the third node N3, and T10 is turned on to write the low voltage signal provided by ELVSS into the source electrode of T3;
In the second phase t2, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G1 provides a low voltage signal, T1 is turned on to write Vdd to the gate electrode of T3, and T6 is turned on to write the low voltage signal provided by ELVSS into the third node N3; T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
At the beginning of the second phase t2, T3 is turned on, and T3 performs threshold voltage compensation in a source following manner. The potential of the source electrode of T3 continues to increase due to the voltage value of the low-voltage signal provided by ELVSS until the source potential of T3 becomes is Vdd−Vth, at this time the threshold voltage compensation is completed and T3 is turned off;
In the third phase t3, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G2 provides a low voltage signal, G1 provides a high voltage signal, and T2 is turned on to write the data voltage Vdata into the fourth node N4; at this time, the difference between the potential of N4 and the potential of the source electrode of T3 is Vdata−(Vdd−Vth): T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
In the fourth phase t4, R5 and EM provide high voltage signals, R0 provides low voltage signals, G1 provides low voltage signals, G2 provides low voltage signals, T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD: T8 is turned on, and the potential of the gate electrode of T3 is Vdata, and the gate-source voltage of T3 is Vdata−Vdd+Vth; at this time, the current Ioled flowing through O1 is equal to K(Vdata−Vdd)2; where K is the current coefficient of T3. Referring to the above equation, the current Ioled supplied by the driving transistor T3 to O1 can be determined based on the voltage difference between Vdata and Vdd: since Vdd is a fixed voltage, Ioled can be determined based on Vdata: Ioled is equal to the driving current Ids of T3 driving O1;
In the fourth phase t4, Ioled is equal to Vdata−Vdd)2; Ioled is not related to Vth.
The difference between at least one embodiment of the pixel circuit shown in
In at least one embodiment of the pixel circuit shown in
As shown in
In the first phase t1, R5 and EM provide low voltage signals, R0 provides high voltage signals, G1 provides high voltage signals, DA provides data voltage Vdata, and T6 is turned on to write the initial voltage Vint provided by I0 into the third node N3, T8 and T5 are turned off, T2 is turned on to write the data voltage Vdata into the fourth node N4, and T1 is turned on to control to connect the first node N1 and the power supply voltage terminal ELVDD to write the power voltage Vdd provided by the power supply voltage terminal ELVDD into the first node N1; T10 is turned on to write Vint into the source electrode of T3;
In the second phase t2, R5 provides a low voltage signal, EM provides a high voltage signal, R0 provides a high voltage signal, G1 provides a low voltage signal, T1 is turned on to control to connect the power supply voltage terminal ELVDD and the first node N1, and T6 is turned on, to control to connect the initial voltage terminal I0 and the third node N3, so that the potential of the third node N3 is Vint: T5 is turned on, and the drain electrode of T3 is electrically connected to ELVDD;
At the beginning of the second phase t2, T3 is turned on, and T3 performs threshold voltage compensation in a source following manner. The potential of the source electrode of T3 continues to increase from Vint until the potential of the source electrode of T3 becomes Vdd−Vth, at this time threshold voltage compensation is completed, T3 is turned off: at this time, the difference between the potential of N4 and the potential of the source electrode of T3 is Vdata−(Vdd−Vth);
In the third phase t3, R5 and EM provide high voltage signals, R0 provides low voltage signals, G1 provides low voltage signals, T8 and T9 are turned on, the drain electrode of T3 is electrically connected to ELVDD, the potential of the gate electrode of T3 is Vdata, and the gate-source voltage of T3 is Vdata−Vdd+Vth; at this time, the current Ioled flowing through O1 is equal to K(Vdata−Vdd)2; where K is the current coefficient of T3. Referring to the above equation, the current Ioled supplied by the driving transistor T3 to O1 can be determined based on the voltage difference between Vdata and Vdd: since Vref is a fixed voltage, Ioled can be determined based on Vdata: Ioled is equal to the driving current Ids of T3 driving O1;
In the third phase t3, Ioled is equal to K(Vdata−Vdd)2; Ioled is not related to Vth.
In the pixel driving circuit provided by the present disclosure, by arranging the first control circuit 20 between the second node N2 and the first power terminal VDD, the first control circuit 20 can provide the voltage signal of the first voltage terminal VDD provided to the second node N2 in respond to the signal of the enable signal terminal EM, so that the duration of the voltage signal provided by the first power terminal VDD to the second node N2 can be adjusted by adjusting the conduction duration of the enable signal, so that the pixel driving circuit has a PWM function and can improve the display uniformity of the display panel at low gray levels and improves display quality.
Because the pixel driving circuit in the pixel circuit described in at least one embodiment of the present disclosure has the first control circuit 20, by adjusting the on-level duty ratio of the enable signal at the enable signal terminal EM, the refresh rate of the image to be displayed can be adjusted, thereby improving the display uniformity of the display panel. For example, if the current image to be displayed is a low-gray-scale display, the driving integrated circuit DIC can increase the gray-scale voltage based on the gray-scale voltage corresponding to the current gray-scale value, that is, a higher gray-scale voltage is used to display the current gray-scale display. At the same time, the driving integrated circuit DIC can reduce the duty ratio of the conduction level of the enable signal terminal EM to reduce the refresh rate of the current picture, thereby combining the adjustment of the gray-scale voltage and adjustment of the refresh rate to improve the display uniformity of the display panel at low gray levels. It can be seen that the pixel driving circuit in the pixel circuit according to at least one embodiment of the present disclosure can control the driving current provided by the driving transistor through the first control circuit 20, making it possible to adjust the driving current. It should be understood that in other embodiments, the first control circuit 20 can also be used in other ways to improve display uniformity, which will not be described in detail here.
As shown in
As shown in
As shown in
Similarly, the first reset circuit 30, the second reset circuit 40 and the data writing-in circuit 50 described in this disclosure can all be implemented by transistors. Exemplarily, the first reset circuit 30 may include a fourth transistor T4. The first electrode of the fourth transistor T4 is connected to the first initial signal terminal Vinit1. The second electrode of the fourth transistor T4 is connected to the third node N3. The gate electrode of the fourth transistor T4 is connected to the third gate signal terminal Gate3, and the fourth transistor T4 can be configured to transmit the signal of the first initial signal terminal Vinit1 to the third node N3 in response to the signal of the third gate signal terminal Gate3; the second reset circuit 40 can include a second transistor T2, the first electrode of the second transistor T2 is connected to the second initial signal terminal Vinit2, the second electrode of the second transistor T2 is connected to the first node N1, and the gate electrode of the second transistor T2 is connected to the second gate signal terminal. Gate2, the second transistor T2 may be configured to transmit the signal of the second initial signal terminal Vinit2 to the first node N1 in response to the signal of the second gate signal terminal Gate2; the data writing-in circuit 50 may include a first transistor T1, the first electrode of the first transistor T1 is connected to the data signal terminal Data, the second electrode of the first transistor T1 is connected to the first node N1, the gate electrode of the first transistor T1 is connected to the first gate signal terminal Gate1, and the first transistor T1 can be configured to transmit the signal of the data signal terminal Data to the first node N1 in respond to the signal of the gate signal terminal Gate1. Wherein, the first transistor T1, the second transistor T2 and the fourth transistor T4 may all be N-type transistors, for example, they may be N-type oxide thin film transistors. Of course, in other embodiments, the first reset circuit 30, the second reset circuit 40 and the data writing-in circuit 50 may also have other circuit structures, which will not be described in detail here.
As shown in
At least one embodiment of the pixel circuit shown in
The present disclosure also provides a display panel, which may include a plurality of pixel driving circuits described in any embodiment of the present disclosure. A plurality of pixel driving circuits are arranged in an array along a first direction X and a second direction Y. The first direction X may be, for example, a row direction, and the second direction Y may be, for example, a column direction.
By forming the fifth transistor T5, the display panel of the present disclosure can adjust the conduction duration of the fifth transistor T5 in the light emitting phase by adjusting the duty ratio of the conduction level of the first enable signal line EM, thereby adjusting the size of driving current provided by the pixel driving, thereby actively controlling the pixel driving circuit during the light emitting phase, providing the possibility to adjust the gray-scale voltage of the image displayed on the display panel. In other words, because the display panel of the present disclosure has the fifth transistor T5, it can realize the adjustment of the gray scale value of the display screen in the light emitting phase.
As shown in
It should be understood that when a certain structure A in this disclosure extends along direction B, it means that A may include a main part and a secondary part connected to the main part. The main part is a line, line segment or bar-shaped body, and the main part extends along direction B, and the length of the main part extending in direction B is greater than the length of the secondary part extending in other directions.
The present disclosure can use the third conductive layer 4 as a mask to conduct conduction processing on the active layer 3, that is, the area covered by the third conductive layer 4 in the active layer 3 can form the channel region of the transistor. The areas not covered by the third conductive layer 4 form conductor structures.
The first enable signal line EM can be configured to provide the enable signal terminal EM in
As shown in
The first power line Vdd can provide the first power terminal VDD in
It should be understood that the orthographic projection of a certain structure A on the substrate described in this disclosure covers the orthographic projection of another structure B on the substrate means that the outline of the orthographic projection of B on the plane of the base substrate is completely located within the outline of the orthographic projection of B on the plane of the base substrate.
In addition, as shown in
As shown in
As shown in
The second addition part 232 may be connected to the third bridge portion 53 of the fourth conductive layer 5 through a via hole, so as to connect the second addition part 232 to the third node N3 through the third bridge portion 53 so that the second electrode of the storage capacitor C is connected to the third node N3. In an exemplary embodiment, the conductive structure forming the third node N3 in the active layer 3 may be located on a side of the third active portion 33 away from the fifth active portion 35, and accordingly, the second addition part 232 may be located on a side of the second main body part 231 away from the first enable signal line EM.
In addition, as shown in
The first gate line Gate1′ is arranged corresponding to the first gate signal line Gate1 of the third conductive layer 4. The orthographic projection of the first gate line Gate1′ on the base substrate can partially overlap the orthographic projection of the first gate signal line Gate1 on the base substrate and covers the orthographic projection of the first active portion 31 on the base substrate, so that a part of the structure of the first gate line Gate1′ can be configured to form the bottom gate electrode of the first transistor T1.
The second gate line Gate2′ is arranged corresponding to the second gate signal line Gate2. The orthographic projection of the second gate line Gate2′ on the base substrate partially overlaps the orthographic projection of the second gate signal line Gate2 on the substrate and covers the orthographic projection of the second active portion 32 on the base substrate, so that a part of the structure of the second gate line Gate2′ can be configured to form the bottom gate electrode of the second transistor T2.
The third gate line Gate3′ is arranged correspondingly to the third gate signal line Gate3. The orthographic projection of the third gate line Gate3′ on the base substrate partially overlaps the orthographic projection of the third gate signal line Gate3 on the substrate and covers the orthographic projection of the fourth active portion 34 on the base substrate, so that part of the structure of the third gate line Gate3′ can be configured to form the bottom gate electrode of the fourth transistor T4.
The second enable signal line EM′ is arranged corresponding to the first enable signal line EM. The orthographic projection of the second enable signal line EM′ on the base substrate partially overlaps the orthographic projection of the first enable signal line EM on the base substrate and covers the orthographic projection of the fifth active portion 35 on the base substrate, so that a part of the structure of the second enable signal line EM′ can be configured to form the bottom gate electrode of the fifth transistor T5.
As shown in
As shown in
The thirteenth active portion 313 and the fourteenth active portion 314 are respectively connected to both sides of the second active portion 32, and the thirteenth active portion 313 may be configured to form the first electrode of the second transistor T2, the fourteenth active portion 314 may be configured to form the second electrode of the second transistor T2. The connected structure of the thirteenth active portion 313, the second active portion 32 and the fourteenth active portion 314 may extend along the second direction Y, and the fourteenth active portion 314 is located on one side of the second active portion 32 close to the third active portion 33, correspondingly, the thirteenth active portion 313 is located on the side of the second active portion 32 away from the third active portion 33. The thirteenth active portion 313 may be connected to the second bridge portion 52 of the fourth conductive layer 5 through a via hole, so as to connect the second initial signal line Vinit2 of the third conductive layer 4 through the second bridge portion 52, thereby connecting the first electrode of the second transistor T2 to the second initial signal terminal Vinit2. The fourteenth active portion 314 may be connected to the first bridge portion 51 of the fourth conductive layer 5 through a via hole, so as to connect the second electrode of the second transistor T2 to the first node N1 through the first bridge portion 51.
The eighteenth active portion 318 is connected between the fourth active portion 34 and the third active portion 33 and is configured to form the second electrode of the fourth transistor T4 and the third node N3. The seventeenth active portion 317 is connected to the side of the fourth active portion 34 away from the third active portion 33 and is configured to form the first electrode of the fourth transistor T4. The seventeenth active portion 317 can be connected to the fourth bridge portion 54 of the fourth conductive layer 5 through a via hole, and is configured to connect the first electrode of the fourth transistor T4 to the first initial signal terminal Vinit1 through the fourth bridge portion 54.
As shown in
The first gate signal line Gate1 may be configured to provide the first gate signal terminal Gate1 in
The second gate signal line Gate2 may be configured to provide the second gate signal terminal Gate2 in
The third gate signal line Gate3 may be configured to provide the third gate signal terminal Gate3 in
The first initial signal line Vinit1 may be configured to provide the first initial signal terminal Vinit1 in
As shown in
The orthographic projection of the second bridge portion 52 on the base substrate may extend along the second direction Y to connect the thirteenth active portion 313 and the second initial signal line Vinit2 through via holes respectively in the second direction Y to connect the first electrode of the second transistor T2 to the second initial signal terminal Vinit2.
The orthographic projection of the third bridge portion 53 on the base substrate may extend along the first direction X to connect the second addition portion 232 and the eighteenth active portion 318 through via holes in the first direction, so that the second electrode of the fourth transistor T4 and the second electrode of the storage capacitor C are connected to the third node N3.
The orthographic projection of the fourth bridge portion 54 on the base substrate may extend along the second direction Y to connect the seventeenth active portion 317 and the first initial signal line Vinit1 through via holes in the second direction Y respectively, and connect the first electrode of the fourth transistor T4 to the first initial signal terminal Vinit1.
In addition, as shown in
As shown in
As shown in
The driving method described in the embodiment of the present disclosure is applied to the above-mentioned pixel circuit. The driving method includes:
The display device according to the embodiment of the present disclosure includes the above-mentioned pixel circuit.
The above descriptions are implementations of the present disclosure. It should be pointed out that those skilled in the art can make some improvements and modifications without departing from the principle of the present disclosure. These improvements and modifications shall also fall within the scope of the present disclosure.
Number | Date | Country | Kind |
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202211139247.2 | Sep 2022 | CN | national |
PCT/CN2022/134737 | Nov 2022 | WO | international |
The present disclosure is the U.S. national phase of PCT Application No. PCT/CN2023/110336 filed on Jul. 31, 2023, which claims the priority of PCT Application No. PCT/CN2022/134737 filed on Nov. 28, 2022 and Chinese patent application No. 202211139247.2 filed on Sep. 19, 2022, which are incorporated herein by reference in their entireties.
Filing Document | Filing Date | Country | Kind |
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PCT/CN2023/110336 | 7/31/2023 | WO |