This application claims priority to China Patent Application No. 201911340154.4, filed on Dec. 23, 2019, the content of which is hereby incorporated by reference in its entirety.
The present disclosure relates to a field of display drive, in particular to a pixel scan drive circuit, an array substrate and a display terminal.
With the development of display technology, an Organic Light Emitting Diode (OLED) display panel, as a new generation of the display technology, has attracted considerable market attention due to its merits such as high resolution, high brightness, high resolution and fast response time, which has become one of mainstream developments in modern display panels.
A Gate Driver on Array (GOA) technology is usually used for a pixel scan drive circuit of the OLED display panel, and the GOA technology is a technology that integrates gate drive circuits on a display array substrate of a liquid crystal display device by use of photolithography. The pixel scan drive circuit includes a number of thin-film transistors and a number of capacitors. At present, types of thin-film transistors (TFTs) in the pixel scan drive circuit are identical, such as N-type TFTs or P-type TFTs, namely, the N-type TFTs thin-film transistors only or the P-type TFTs only are used. However, when the TFTs in the pixel scan drive circuit are all the P-type TFTs, refresh rate cannot be reduced and power consumption of the OLED display panel is large when pixel units are performing image display due to large leakage current. When the TFTs in the pixel scan drive circuit are all the N-type TFTs, display brightness of the same image data in different pixel units is not exactly the same due to the drift of the TFTs, so that the image data cannot be displayed uniformly. Moreover, the current pixel scan drive circuit is prone to interference with other image data when performing the image display, which further leads to the image data cannot be displayed correctly, resulting in poor image display effect.
To solve the above problems, the present disclosure provides a pixel scan drive circuit with better display effect.
The present disclosure provides a pixel scan drive circuit, used to output a scan signal to pixel units, the pixel scan drive circuit includes a switch unit, a pull-up output unit and a pull-down output unit. A scanning cycle in a display phase of one frame image includes a scan signal output phase and a maintenance phase. In the scan signal output phase, the pull-down output unit outputs a first reference voltage in the scan signal to an output end according to a clock signal, the first reference voltage is configured to control the pixel units to receive image data for image display. The switch unit is electrically connected to the pull-down output. In the maintenance phase, the switch unit controls the voltage of a pull-down node according to received switch control signal, and controls the pull-down output unit to stop outputting the first reference voltage according to the voltage of the pull-down node. The switch control signal is an input signal of the pixel scan drive circuit. In the maintenance phase, the pull-up output unit outputs a second reference voltage in the scan signal, and the second reference voltage is configured to control the pixel units to stop receiving the image data. Transistors included in the switch unit are of different types from transistors included in the pull-up output unit and the pull-down output unit.
The present disclosure further provides an array substrate, the array substrate includes a display area and a non-display area. The display area is provided with a plurality of pixel units, and the non-display area is provided with a scan driver module. The scan driver module includes a plurality of pixel scan drive circuits as described above, the plurality of pixel scan drive circuits cascade to each other.
The present disclosure further provides a display terminal, the display terminal includes the array substrate as described above.
Compared with the existing technology, the switch unit can accurately control the pull-down output unit to stop outputting the first reference voltage in the scan signal in the maintenance phase in a scanning cycle, and the first reference voltage is used to control the pixel units to receive the image data, so that the pixel units can accurately perform image display according to the received image data in the maintenance phase, which can effectively protect the pixel units from the interference of other signals when the pixel units are executed to display the image data, and ensure the accuracy of the image data.
Furthermore, when the transistor in the switch unit is an N-type transistor, while one of the transistors in the pull-up output unit, the pull-down output unit, the pull-down unit and the start unit adopts a P-type transistor, not all transistors adopt a single N-type thin-film transistor or P-type thin-film transistor. The P-type transistor can accurately receive a voltage with a fixed value and has a big drive current, which can reduce the border area occupied by the pixel scan drive circuit. The N-type thin-film transistor can accurately and quickly adapt to the refresh rate of different image data when displaying at high and low speeds. Moreover, because the leakage current is small, the pixel scan drive circuit can accurately suppress the voltage drift of itself and the display unit, effectively reducing the power consumption and having a better display effect.
Moreover, the P-type low temperature polycrystalline oxide transistors used in the pull-up output unit, the pull-down output unit, the pull-down unit and the start unit have strong driving abilities, which can quickly adapt to the refresh rate of different image data when displaying at high and low speeds.
In order to more clearly explain the technical solutions of the embodiments of the present disclosure, the drawings required in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present disclosure. In terms of technicians, other drawings can be obtained based on these drawings without any creative work.
The technical solutions in the embodiments of the present disclosure will be described clearly and completely with reference to the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, but not all the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without paying any creative work fall within the protection scope of the present disclosure.
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The display panel 11 includes a display area 11a for image display and a non-display area 11b. The display area 11a is configured to perform image display, that is, the display area 11a is used to display images. The non-display area 11b is arranged around the display area 11a, and is designed to be used for mounting other auxiliary parts or modules. Specifically, the display panel 11 further includes an array substrate 11c, an opposite substrate 11d, and a display medium layer 11e sandwiched between the array substrate 11c and the opposite substrate 11d. In this embodiment, a display medium in the display medium layer 11e is a Organic Electroluminescence Diode (OLED) material.
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The m data lines 120 are arranged in parallel along a second direction Y, and are separated by a first predetermined distance and insulated from each other. The n scan lines 130 are arranged in parallel along a first direction X, and are separated by a second predetermined distance and insulated from each other. The n emission lines 140 are arranged in parallel along the first direction X, and are separated by the second predetermined distance and insulated from each other. The n scan lines 130 and the n emission lines 140 are insulated with the m data lines 120 from each other. The first direction X is perpendicular to the second direction Y.
For the convenience of illustration, the m data lines 120 are respectively defined as D1, D2, . . . , Dm-1, Dm, in a position order; the n scan lines 130 are respectively defined in a position order as G1, G2, . . . , G32, . . . , Gn; the n emission lines 140 are respectively defined as E1, E2, . . . , E32, . . . , En in a position order. Each pixel unit P is electrically connected to a scan line 130 and an emission line 140 both of which are extended along the first direction X and a data line 120 which is extended along the second direction Y, correspondingly.
The display terminal 10 further includes a scan driver module 104, a timing control circuit 101, a data driver circuit 102, and an emission driver circuit 103. The scan driver module 104, the timing control circuit 101, the data driver circuit 102 and the emission driver circuit 103 are used to drive the pixel units P for image display cooperatively. The scan driver module 104 and the emission driver circuit 103 are located on the array substrate 11c and correspond to the position of the non-display area 11b.
The data driver circuit 102 is electrically connected to the data lines 120 and is configured to transmit the image data to be displayed to the pixel units P in the form of data voltage by use of the plurality of data lines 120.
The scan driver module 104 is electrically connected to the scan lines 130 and is configured to output scan signals Gn to the pixel units P through the scan lines 130 to control when the pixel units P receive the image data. In detail, the scan driver module 104 can output the scan signals G1, G2, . . . , G32, . . . , Gn to corresponding pixel units P through the scan lines 130 (including the scan lines G1, G2, . . . , G32, . . . , Gn arranged in position order) in accordance with a scanning cycle. For example, the scan driver module 104 output the scan signal G1 to the pixel units P by use of the scan line G1, the scan driver module 104 output the scan signal G2 to the pixel units P by use of the scan line G2, the scan driver module 104 output the scan signal G32 to the pixel units P by use of the scan line G32, and the scan driver module 104 output the scan signal Gn to the pixel units P by use of the scan line Gn.
The emission driver circuit 103 is electrically connected to the emission lines 140 and is configured to output initial signals En to the pixel units P through the emission lines 140 to control when the pixel units P emit light according to received image data. In detail, the emission driver circuit 103 can output the initial signals E1, E2, . . . , E32, . . . , En to corresponding pixel units P through the emission lines 140 (including the emission lines E1, E2, . . . , E32, . . . , En arranged in the position order) in accordance with the scanning cycle. For example, the emission driver circuit 103 outputs the initial signal E1 to the pixel units P by use of the emission line E1, the emission driver circuit 103 outputs the initial signal E2 to the pixel units P by use of the emission line E2, the emission driver circuit 103 outputs the initial signal E32 to the pixel units P by use of the emission line E32, the emission driver circuit 103 outputs the emission signal En to the pixel units P by use of the emission line En.
The timing control circuit 101 is electrically connected to the data driver circuit 102, the scan driver module 104 and the emission driver circuit 103 respectively, and is configured to control working sequences of the data driver circuit 102, the scan driver module 104 and the emission driver circuit 103. That is, the timing control circuit 101 can output corresponding timing control signals to the scan driver module 104, the data driver circuit 102 and the emission driver circuit 103 to control when the scan signals Gn and the initial signals En are output.
In this embodiment, circuit elements in the scan driver module 104 and the pixel units P in the display panel 11 are made in the display panel 11 by use of the same process, namely, the Gate Driver on Array (GOA) technology.
It should be understandable that the display terminal 10 further includes other auxiliary circuits for jointly completing image display, such as, Graphics Processing Unit (GPU), power circuit, etc., which will not be repeated in this embodiment.
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In the scan driver module 104, one shift register unit can be used to drive a corresponding row of pixels in the display array substrate, and the number of the scan driver circuits is equal to the number of rows of pixels in the drive display array substrate. When one shift register unit is used to drive multiple rows of pixels in the display array substrate, the number of the shift register units may not be equal to the number of rows of the pixels in the drive display array substrate.
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In the first stage K1, the starting signal STV and the third clock signal CK3 are both at low level, while the first clock signal CK1, the second clock signal CK2 and the fourth clock signal CK4 are all at high level. In the second stage K2, the starting signal STV, the first clock signal CK1, the second clock signal CK2 and the third clock signal CK3 are all at the high level, while the fourth clock signal CK4 is at the low level. In the third stage K3, the starting signal STV, the second clock signal CK2, the third clock signal CK3 and the fourth clock signal CK4 are all at the high level, while the first clock signal CK1 is at the low level. In the fourth stage K4, the starting signal STV, the first clock signal CK1, the third clock signal CK3 and the fourth clock signal CK4 are all at the high level, while the second clock signal CK2 is at the low level. In the fifth stage K5, the starting signal STV, the first clock signal CK1, the second clock signal CK2 and the fourth clock signal CK4 are all at the high level, while the third clock signal CK3 is at the low level. In the sixth stage K6, the starting signal STV, the first clock signal CK1, the second clock signal CK2 and the third clock signal CK3 are all at the high level, while the fourth clock signal CK4 is at the low level.
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The pull-down unit 112 is electrically connected to the first output control unit 114 via the pull-up node PU and is configured to write the first reference voltage Vgl into the pull-up node PU in the reset phase T4 according to the reset signal CLKRST received, and control the pull-up node PU from the high level to the low level.
The switch unit 113 is electrically connected to the pull-down output unit 118 via the first output control unit 114. The switch unit 113 is configured to transmit the second reference voltage Vgh to a pull-down node PD during the maintenance phase of a scanning cycle according to the switch control signal HOLD received, to control the pull-down output unit 118 to stop outputting a clock signal CLKB which is taken as the first reference voltage Vgl of the scan signal. The scan signal is used for the pixel units to receive the image data for image display. When the scan signal is the first reference voltage Vgl, the pixel units begin to receive the image data. When the scan signal is the second reference voltage Vgh, the pixel units stop receiving the image data.
The first output control unit 114 is electrically connected to the pull-up output unit 117 through the pull-up node PU, and is configured to transmit the second reference voltage Vgh to the pull-down node PD during the maintenance stage according to the voltage of the pull-up node PU and control the pull-down node PD to rise from the low level to the high level. The start unit 115 is electrically connected to the second output control unit 116 and the pull-down output unit 118 through the pull-down node PD, and is configured to output the initial signal En to the pull-down node PD during the scan signal output phase of a scanning cycle and control the voltage of the pull-down node PD from the high level to the low level.
The second output control unit 116 is electrically connected to the pull-up node PU. The second output control unit 116 is configured to be switched on according to a low level of the pull-down node PD during the scan signal output phase of a scanning cycle, and output the second reference voltage Vgh to the pull-up node PU to control the pull-up node PU to rise from the low level to the high level.
The pull-up output unit 117 is electrically connected to the output end OUT, and is configured to be switched on according to the voltage of the pull-up node PU during the maintenance phase to output the second reference voltage Vgh in the scan signal. The second reference voltage Vgh is configured to control the pixel units to stop receiving the image data.
The pull-down output unit 118 is electrically connected to the output end OUT, and is configured to be switched on according to the voltage of the pull-down node PD during the scan signal output phase of a scanning cycle to output the clock signal CLKB which is taken as the first reference voltage Vgl of the scan signal to the output end OUT. The first reference voltage Vgl is configured to control the pixel units to receive the image data for image display.
In this embodiment, the transistors used in the switch unit 113 are of different types from the transistors included in the pull-up output unit 117 and the pull-down output unit 118, namely, the transistors used in the switch unit 113 are different from the transistors included in the pull-up output unit 117 and the pull-down output unit 118. The types of the transistors are channel types, including N-channel and P-channel, therefore, the transistors include N-type thin-film transistors and P-type thin-film transistors correspondingly. The leakage current of an N-type metal oxide thin-film transistor in the switch unit 113 is less than 10−12 A.
In detail, the pull-up node PU can be used as an input control end of the first output control unit 114 and an input control end of the pull-up output unit 117, and the pull-down node PD can be used as an input control end of the second output control unit 116 and an input control end of the pull-down output unit 118. The pull-up node PU and the pull-down node PD are both internal control signal nodes in the pixel scan drive circuit 100.
In this embodiment, the first reference voltage Vgl of the scan signal is the low level, and the second reference voltage Vgh of the scan signal is the high level. The pull-up signal PURST, the reset signal CLKRST, the switch control signal HOLD, the initial signal En and the clock signal CLKB are all external control signals received by the pixel scan drive circuit 100.
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In detail, the pull-up unit 111 includes a seventh transistor M7 which includes a gate, a drain and a source. The gate of the seventh transistor M7 receives the pull-up signal PURST, the drain of the seventh transistor M7 is electrically connected to the pull-up node PU, and the source of the seventh transistor M7 is electrically connected to a second reference voltage end VGH. The second reference voltage end VGH is configured to provide the second reference voltage Vgh required by a display unit, such as 4.5˜7V. In this embodiment, the seventh transistor M7 is a Low Temperature Polycrystalline Oxide (LTPO) transistor, and the seventh transistor M7 can be a pull-up transistor. When the seventh transistor M7 is the P-type LTPO transistor, the seventh transistor M7 is in a conducting state under the control of a received low-level pull-up signal PURST during the pull-down phase T3 and the maintenance phase. That is, when the seventh transistor M7 is the P-type LTPO transistor, the seventh transistor M7 is switched on under the control of a received low-level pull-up signal PURST during the pull-down phase T3 and the maintenance phase.
In other embodiments of this disclosure, the seventh transistor M7 can also be an N-type Oxide thin-film transistor (TFT), which can be switched on under the control of a received high-level pull-up signal PURST during the pull-down phase T3 and the maintenance phase.
The pull-down unit 112 includes a sixth transistor M6 which includes a gate, a drain and a source. The gate of the sixth transistor M6 receives the reset signal CLKRST, the source of the sixth transistor M6 is electrically connected a first reference voltage end VGL, and the drain of the sixth transistor M6 is electrically connected to the pull-up node PU. In this embodiment, the sixth transistor M6 is a TFT, and the sixth transistor M6 can be a pull-down transistor. The first reference voltage end VGL provides the first reference voltage Vgl.
The switch unit 113 includes a eighth transistor M8 which includes a gate, a drain and a source. The gate of the eighth transistor M8 receives the switch control signal HOLD, the source of the eighth transistor M8 is electrically connected to the second reference voltage end VGH, and the drain of the eighth transistor M8 is electrically connected to the first output control unit 114. In this embodiment, the eighth transistor M8 is an N-type oxide thin-film transistor, and the eighth transistor M8 can be a switching transistor.
Specifically, the N-type oxide thin-film transistor can be a ZnO TFT, a GaZnO TFT, an InZnO TFT, an AlZnO TFT, an InGaZnO TFT, or an IGZO TFT. Moreover, the N-type oxide thin-film transistor can be an N-type thin-film transistor made from multiple metal-oxide thin-film materials including ZnO, GaZnO, InZnO, AlZnO, InGaZnO, and IGZO, or can also be an N-type thin-film transistor made by stacking and combining at least two layers of the metal-oxide thin-film materials.
The first output control unit 114 includes a fifth transistor M5 which includes a gate, a drain and a source. The gate of the fifth transistor M5 is electrically connected to the pull-up node PU, the source of the fifth transistor M5 is electrically connected to the switch unit 113, and the drain of the fifth transistor M5 is electrically connected to the pull-down node PD. In this embodiment, the fifth transistor M5 is a P-type LTPO transistor, and the fifth transistor M5 can be a first output control transistor. When the fifth transistor M5 is the P-type LTPO transistor, the fifth transistor M5 is in the conducting state under the control of low-voltage of the pull-up node PU during the maintenance phase to output the second reference voltage Vgh to the pull-down node PD in order to control the pull-down output unit 118 to be under a cut-off state. That is to say, when the fifth transistor M5 is the P-type LTPO transistor, the fifth transistor M5 is switched on under the control of low-voltageof the pull-up node PU during the maintenance phase to output the second reference voltage Vgh to the pull-down node PD, in order to control the pull-down output unit 118 to be switched off.
In other embodiments of this disclosure, the fifth transistor M5 can also be an N-type TFT, which can be switched on under the control of high-voltage of the pull-up node PU during the maintenance phase to output the second reference voltage Vgh to the pull-down node PD, in order to control the pull-down output unit 118 to be under the cut-off state.
The start unit 115 includes a first transistor M1 which includes a gate, a drain and a source. The gate and the source of the first transistor M1 are electrically connected and simultaneously receive the initial signal En, and the drain of the first transistor M1 is electrically connected to the pull-down node PD. That is, the first transistor M1 appears as a diode connection, in other words, the first transistor M1 is designed as a type of diode connection. In this embodiment, the first transistor M1 is the P-type LTPO transistor, and the first transistor M1 can be a start transistor.
The second output control unit 116 includes a fourth transistor M4 which includes a gate, a drain and a source. The gate of the fourth transistor M4 is electrically connected to the pull-down node PD, the source of the fourth transistor M4 is electrically connected to the second reference voltage end VGH, and the drain of the fourth transistor M4 is electrically connected to the pull-up node PU. In this embodiment, the fourth transistor M4 is the P-type LTPO transistor, and the fourth transistor M4 can be a second output control transistor. When the fourth transistor M4 is the P-type LTPO transistor, the fourth transistor M4 is in the conducting state under the control of low-voltage of the pull-down node PD during the scan signal output phase, and outputs the second reference voltage Vgh to the pull-up node PU. That is, when the fourth transistor M4 is the P-type LTPO transistor, the fourth transistor M4 is switched on under the control of low-voltage of the pull-down node PD during the scan signal output phase, and outputs the second reference voltage Vgh to the pull-up node PU.
In other embodiments of this disclosure, the fourth transistor M4 can also be an N-type oxide thin-film transistor, which can be switched on under the control of high-voltage of the pull-down node PD during the scan signal output phase and can output the second reference voltage Vgh to the pull-up node PU.
The pull-up output unit 117 includes a second transistor M2 which includes a gate, a drain and a source. The gate of the second transistor M2 is electrically connected to the pull-up node PU, the source of the second transistor M2 is electrically connected to the second reference voltage end VGH, and the drain of the second transistor M2 is electrically connected to the output end OUT. In this embodiment, the second transistor M2 is the P-type LTPO transistor, and the second transistor M2 can be a pull-up output transistor.
The pull-down output unit 118 includes a third transistor M3 and a capacitor C1. The third transistor M3 includes a gate, a drain and a source. The gate of the third transistor M3 is electrically connected to the pull-down node PD, the source of the third transistor M3 receives the clock signal CLKB, and the drain of the third transistor M3 is electrically connected to output end OUT. The capacitor C1 is electrically connected between the pull-down node PD and the output end OUT. In this embodiment, the third transistor M3 is the P-type LTPO transistor, and the third transistor M3 can be a pull-down output transistor.
In detail, the transistors in the pull-up unit 111, the pull-down unit 112, the first output control unit 114, the start unit 115, the second output control unit 116, the pull-up output unit 117 and the pull-down output unit 118 are all the P-type LTPO transistors. The source of the P-type LTPO transistor can accurately receive the second reference voltage Vgh as a fixed value, and the larger the driving current of the P-type transistor is, the more the border area occupied by drive circuits can be reduce.
The N-type oxide thin-film transistor is used in the switch unit 113, therefore, the leakage current of the TFT in the switch unit 113 is small, which can effectively prevent the pull-up node PU from voltage and current interference. At the same time, the voltage and the current of the pull-up node PU can be better protected, and the leakage current of the pixel scan drive circuit is overall small, so that the pixel scan drive circuit can drive display refresh of the image data at a low frequency or a high frequency.
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In the initial phase T1, the pull-up signal PURST, the reset signal CLKRST, the clock signal CLKB and the pull-up node PU are all at the high level, the initial signal En and the switch control signal HOLD are both at the low level, and the pull-down node PD is at the second level.
Thus, the seventh transistor M7 of the pull-up unit 111 is in the cut-off state under the control of the pull-up signal PURST, namely, the seventh transistor M7 is switched off under the control of the pull-up signal PURST. The sixth transistor M6 of the pull-down unit 112 is in the cut-off state under the control of the reset signal CLKRST, namely, the sixth transistor M6 is switched off under the control of the reset signal CLKRST. The eighth transistor M8 of the switch unit 113 is in the cut-off state under the control of the switch control signal HOLD, namely, the eighth transistor M8 is switched off under the control of the switch control signal HOLD. The fifth transistor M5 of the first output control unit 114 is in the cut-off state under the control of the pull-up node PU, namely, the fifth transistor M5 is switched off under the control of the pull-up node PU. The first transistor M1 of the start unit 115 is in the conducting state under the control of the initial signal En, namely, the first transistor M1 is switched on under the control of the initial signal En. The fourth transistor M4 of the second output control unit 116 is in the conducting state under the control of the voltage of the pull-down node PD, namely, the fourth transistor M4 is switched on under the control of the voltage of the pull-down node PD. The second transistor M2 of the pull-up output unit 117 is in the cut-off state under the control of the voltage of the pull-up node PU, namely, the second transistor M2 is switched off under the control of the voltage of the pull-up node PU. The third transistor M3 of the pull-down output unit 118 is in the conducting state under the control of the voltage of the pull-down node PD, namely, the third transistor M3 is switched on under the control of the voltage of the pull-down node PD.
Since the first transistor M1 is in the conducting state, the pull-down node PD is in the second level, the clock signal CLKB is transmitted to the capacitor C1 through the third transistor M3, the fourth transistor M4 is in the conducting state, and the pull-up node PU is at the high level.
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In the scanning phase T2, the pull-up signal PURST, the reset signal CLKRST, the initial signal En and the pull-up node PU are all at the high level, the clock signal CLKB and the switch control signal HOLD are both at the low level, and the pull-down node PD is at the third level.
Thus, the seventh transistor M7 of the pull-up unit 111 is in the cut-off state under the control of the pull-up signal PURST, namely, the seventh transistor M7 is switched off under the control of the pull-up signal PURST. The sixth transistor M6 of the pull-down unit 112 is in the cut-off state under the control of the reset signal CLKRST, namely, the sixth transistor M6 is switched off under the control of the reset signal CLKRST. The eighth transistor M8 of the switch unit 113 is in the cut-off state under the control of the switch control signal HOLD, namely, the eighth transistor M8 is switched off under the control of the switch control signal HOLD. The fifth transistor M5 of the first output control unit 114 is in the cut-off state under the control of the pull-up node PU, namely, the fifth transistor M5 is switched off under the control of the pull-up node PU. The first transistor M1 of the start unit 115 is in the cut-off state under the control of the initial signal En, namely, the first transistor M1 is switched off under the control of the initial signal En. The fourth transistor M4 of the second output control unit 116 is in the conducting state under the control of the voltage of the pull-down node PD, namely, the fourth transistor M4 is switched on under the control of the voltage of the pull-down node PD. The second transistor M2 of the pull-up output unit 117 is in the cut-off state under the control of the voltage of the pull-up node PU, namely, the second transistor M2 is switched off under the control of the voltage of the pull-up node PU. Since the clock signal CLKB is at the low level, the output end OUT is at the high level, therefore, a current direction in the third transistor M3 of the pull-down output unit 118 is from the drain to the source, that is, the current in the third transistor M3 of the pull-down output unit 118 flows from the drain to the source.
Since the first transistor M1 is in the cut-off state, the third transistor M3 can be used as a single-guide diode under the control of the clock signal CLKB, and the current in the third transistor M3 flows from the output end OUT connected to the drain of the third transistor M3 to the source of the third transistor M3. Therefore, the output end OUT changes from the high level to the low level. The pull-down node PD is changed from the second level to the third level under the control of the capacitor C1, therefore controlling the third transistor M3 and the fourth transistor M4 in the conducting state.
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In the pull-down phase T3, the reset signal CLKRST, the clock signal CLKB, the initial signal En and the pull-up node PU are all at the high level, the pull-up signal PURST and the switch control signal HOLD are both at the low level, and the pull-down node PD is at the second level.
Thus, the seventh transistor M7 of the pull-up unit 111 is in the conducting state under the control of the pull-up signal PURST, namely, the seventh transistor M7 is switched on under the control of the pull-up signal PURST. The sixth transistor M6 of the pull-down unit 112 is in the cut-off state under the control of the reset signal CLKRST, namely, the sixth transistor M6 is switched off under the control of the reset signal CLKRST. The eighth transistor M8 of the switch unit 113 is in the cut-off state under the control of the switch control signal HOLD, namely, the eighth transistor M8 is switched off under the control of the switch control signal HOLD. The fifth transistor M5 of the first output control unit 114 is in the cut-off state under the control of the pull-up node PU, namely, the fifth transistor M5 is switched off under the control of the pull-up node PU. The first transistor M1 of the start unit 115 is in the cut-off state under the control of the initial signal En, namely, the first transistor M1 is switched off under the control of the initial signal En. The fourth transistor M4 of the second output control unit 116 is in the conducting state under the control of the voltage of the pull-down node PD, namely, the fourth transistor M4 is switched on under the control of the voltage of the pull-down node PD. The second transistor M2 of the pull-up output unit 117 is in the cut-off state under the control of the voltage of the pull-up node PU, namely, the second transistor M2 is switched off under the control of the voltage of the pull-up node PU. The third transistor M3 of the pull-down output unit 118 is in the conducting state under the control of the voltage of the pull-down node PD, namely, the third transistor M3 is switched on under the control of the voltage of the pull-down node PD.
When the clock signal CLKB changes from the low level to the high level, the pull-down node is at the third level, and the output end OUT is at the low level. Thus, the third transistor M3 is switched on, the output end OUT changes from the low level to the high level, and the voltage of the pull-down node PD changes from the third level to the second level through the capacitor C1. To ensure that the second transistor M2 of the pull-up output unit 117 is in the cut-off state, the seventh transistor M7 in the pull-up unit 111 is in the conducting state under the control of the pull-up signal PURST to ensure that the pull-up node PU remains at the high level.
Please refer to
In the reset phase T4, the pull-up signal PURST, the clock signal CLKB, the initial signal En and the switch control signal HOLD are all at the high level, the reset signal CLKRST and the pull-up node PU are both at the low level, and the pull-down node PD is at the first level.
Thus, the seventh transistor M7 of the pull-up unit 111 is in the cut-off state under the control of the pull-up signal PURST, namely, the seventh transistor M7 is switched off under the control of the pull-up signal PURST. The sixth transistor M6 of the pull-down unit 112 is in the conducting state under the control of the reset signal CLKRST, namely, the sixth transistor M6 is switched on under the control of the reset signal CLKRST. The eighth transistor M8 of the switch unit 113 is in the conducting state under the control of the switch control signal HOLD, namely, the eighth transistor M8 is switched on under the control of the switch control signal HOLD. The fifth transistor M5 of the first output control unit 114 is in the conducting state under the control of the pull-up node PU, namely, the fifth transistor M5 is switched on under the control of the pull-up node PU. The first transistor M1 of the start unit 115 is in the cut-off state under the control of the initial signal En, namely, the first transistor M1 is switched off under the control of the initial signal En. The fourth transistor M4 of the second output control unit 116 is in the cut-off state under the control of the voltage of the pull-down node PD, namely, the fourth transistor M4 is switched off under the control of the voltage of the pull-down node PD. The second transistor M2 of the pull-up output unit 117 is in the conducting state under the control of the voltage of the pull-up node PU, namely, the second transistor M2 is switched on under the control of the voltage of the pull-up node PU. The third transistor M3 of the pull-down output unit 118 is in the cut-off state under the control of the voltage of the pull-down node PD, namely, the third transistor M3 is switched off under the control of the voltage of the pull-down node PD.
Since the sixth transistor M6 is switched on under the control of the reset signal CLKRST, the pull-up node PU is changed from the high level to the low level, and the second transistor M2 is switched on. Thus, the second reference voltage Vgh is output to the output end OUT through the second transistor M2. Because the fifth transistor M5 and the eighth transistor M8 are switched on, therefore, the pull-down node PD is at the first level, namely, the high level, the third transistor M3 is switched off to avoid the output end OUT from being affected by the clock signal.
Please refer to
In the first maintenance phase T5, the pull-up signal PURST, the reset signal CLKRST, the clock signal CLKB, the initial signal En, the pull-down node PD and the switch control signal HOLD are all at the high level, and the pull-up node PU is at the low level.
Thus, the seventh transistor M7 of the pull-up unit 111 is in the cut-off state under the control of the pull-up signal PURST, namely, the seventh transistor M7 is switched off under the control of the pull-up signal PURST. The sixth transistor M6 of the pull-down unit 112 is in the cut-off state under the control of the reset signal CLKRST, namely, the sixth transistor M6 is switched off under the control of the reset signal CLKRST. The eighth transistor M8 of the switch unit 113 is in the conducting state under the control of the switch control signal HOLD, namely, the eighth transistor M8 is switched on under the control of the switch control signal HOLD. The fifth transistor M5 of the first output control unit 114 is in the conducting state under the control of the pull-up node PU, namely, the fifth transistor M5 is switched on under the control of the pull-up node PU. The first transistor M1 of the start unit 115 is in the cut-off state under the control of the initial signal En, namely, the first transistor M1 is switched off under the control of the initial signal En. The fourth transistor M4 of the second output control unit 116 is in the cut-off state under the control of the voltage of the pull-down node PD, namely, the fourth transistor M4 is switched off under the control of the voltage of the pull-down node PD. The second transistor M2 of the pull-up output unit 117 is in the conducting state under the control of the voltage of the pull-up node PU, namely, the second transistor M2 is switched on under the control of the voltage of the pull-up node PU. The third transistor M3 of the pull-down output unit 118 is in the cut-off state under the control of the voltage of the pull-down node PD, namely, the third transistor M3 is switched off under the control of the voltage of the pull-down node PD.
Since the eighth transistor M8 is an N-type TFT, therefore, the leakage current in the first output control unit 114 can be reduced, so that the pixel scan drive circuit has a better driving effect at the low frequency.
Please refer to
In the second maintenance phase T6, the pull-up signal PURST, the reset signal CLKRST, the initial signal En, the pull-down node PD and the switch control signal HOLD are all at the high level, and the clock signal CLKB and the pull-up node PU are both at the low level.
Thus, the seventh transistor M7 of the pull-up unit 111 is in the cut-off state under the control of the pull-up signal PURST, namely, the seventh transistor M7 is switched off under the control of the pull-up signal PURST. The sixth transistor M6 of the pull-down unit 112 is in the cut-off state under the control of the reset signal CLKRST, namely, the sixth transistor M6 is switched off under the control of the reset signal CLKRST. The eighth transistor M8 of the switch unit 113 is in the conducting state under the control of the switch control signal HOLD, namely, the eighth transistor M8 is switched on under the control of the switch control signal HOLD. The fifth transistor M5 of the first output control unit 114 is in the conducting state under the control of the pull-up node PU, namely, the fifth transistor M5 is switched on under the control of the pull-up node PU. The first transistor M1 of the start unit 115 is in the cut-off state under the control of the initial signal En, namely, the first transistor M1 is switched off under the control of the initial signal En. The fourth transistor M4 of the second output control unit 116 is in the cut-off state under the control of the voltage of the pull-down node PD, namely, the fourth transistor M4 is switched off under the control of the voltage of the pull-down node PD. The second transistor M2 of the pull-up output unit 117 is in the conducting state under the control of the voltage of the pull-up node PU, namely, the second transistor M2 is switched on under the control of the voltage of the pull-up node PU. The third transistor M3 of the pull-down output unit 118 is in the cut-off state under the control of the voltage of the pull-down node PD, namely, the third transistor M3 is switched off under the control of the voltage of the pull-down node PD.
In the first maintenance phase T5 and the second maintenance phase T5, the eighth transistor M8 is switched on under the control of the switch control signal HOLD, and the second transistor M2 in the pull-up output unit 117 can output the second reference voltage Vgh, which is not affected by the third transistor M3 in the pull-down output unit 118, in order to maintain output stability of drive signals.
Please refer to
In the pull-up phase T7, the reset signal CLKRST, the clock signal CLKB, the initial signal En, the pull-down node PD, the pull-up node PU and the switch control signal HOLD are all at the high level, and the pull-up signal PURST is at the low level.
Thus, the seventh transistor M7 of the pull-up unit 111 is in the conducting state under the control of the pull-up signal PURST, namely, the seventh transistor M7 is switched on under the control of the pull-up signal PURST. The sixth transistor M6 of the pull-down unit 112 is in the cut-off state under the control of the reset signal CLKRST, namely, the sixth transistor M6 is switched off under the control of the reset signal CLKRST. The eighth transistor M8 of the switch unit 113 is in the conducting state under the control of the switch control signal HOLD, namely, the eighth transistor M8 is switched on under the control of the switch control signal HOLD. The fifth transistor M5 of the first output control unit 114 is in the cut-off state under the control of the pull-up node PU, namely, the fifth transistor M5 is switched off under the control of the pull-up node PU. The first transistor M1 of the start unit 115 is in the cut-off state under the control of the initial signal En, namely, the first transistor M1 is switched off under the control of the initial signal En. The fourth transistor M4 of the second output control unit 116 is in the cut-off state under the control of the voltage of the pull-down node PD, namely, the fourth transistor M4 is switched off under the control of the voltage of the pull-down node PD. The second transistor M2 of the pull-up output unit 117 is in the cut-off state under the control of the voltage of the pull-up node PU, namely, the second transistor M2 is switched off under the control of the voltage of the pull-up node PU. The third transistor M3 of the pull-down output unit 118 is in the cut-off state under the control of the voltage of the pull-down node PD, namely, the third transistor M3 is switched off under the control of the voltage of the pull-down node PD.
In this embodiment, in the second maintenance phase T6 and the pull-up phase T7, the switch control signal HOLD can be the low level or the high level.
In the image display process of one frame by the display panel, electronic components in each functional unit of the pixel scan drive circuit work at a fixed phase to avoid long-term charging and discharging, which can reduce the loss of the electronic components in the pixel scan drive circuit, and extend the service life of the electronic components.
Please refer to
Please refer to
The pull-down unit 112 is electrically connected to the first output control unit 114 and is configured to receive the reset signal CLKRST in the reset phase T4 and transmit the first reference voltage Vgl to the pull-up node PU, and control the pull-up node PU from the high level to the low level.
The switch unit 113 is electrically connected between the second reference voltage end VGH and the first output control unit 114. The switch unit 113 is configured to transmit the second reference voltage Vgh to the first output control unit 114 according to received switch control signal HOLD during the reset phase T4 to the pull-up phase T7.
The first output control unit 114 is electrically connected to the second output control unit 116, and is configured to transmit the second reference voltage Vgh to the pull-down node PD according to the voltage of the pull-up node PU during the reset phase T4 to the second maintenance phase T6 and control the pull-down node PD to rise from the low level to the high level.
The start unit 115 is electrically connected to the second output control unit 116 and the pull-down output unit 118. The start unit 115 is configured to control the pull-down node PD from the high level to the low level based on received initial signal En in the initial phase T1.
The second output control unit 116 is electrically connected to the second reference voltage end VGH and the pull-up output unit 117. The second output control unit 116 is configured to transmit the second reference voltage Vgh to the pull-up node PU according to the voltage of the pull-down node PD during the initial phase T1 to the pull-down phase T3 and control the pull-up node PU to rise from the low level to the high level.
The pull-up output unit 117 is electrically connected to the second reference voltage end VGH and the output end OUT. The pull-up output unit 117 is configured to transmit the second reference voltage Vgh to the output end OUT according to the voltage of the pull-up node PU during the reset phase T4 to the second maintenance phase T6.
The pull-down output unit 118 is electrically connected to the second output control unit 116 and the output end OUT. The pull-down output unit 118 is configured to control the clock signal CLKB output to the output end OUT according to the voltage of the pull-down node PD during the initial phase T1 to the pull-down phase T3.
Specifically, the pull-up node PU can be used as an input control end of the first output control unit 114 and an output control end of the pull-up output unit 117. The pull-down node PD can be used as an input control end of the second output control unit 116 and an input control end of the pull-down output unit 118.
In detail, as shown in
The switch unit 113 includes an eighth transistor M8 which includes a gate, a source and a drain. The gate of the eighth transistor M8 receives the switch control signal HOLD, the source of the eighth transistor M8 is electrically connected to the second reference voltage end VGH, and the drain of the eighth transistor M8 is electrically connected to the first output control unit 114. In this embodiment, the eighth transistor M8 is an N-type oxide thin-film transistor, and the eighth transistor M8 can be a switching transistor. The second reference voltage end VGH can be configured to provide the second reference voltage Vgh required by the display unit, such as 4.5˜7V.
Specifically, the N-type oxide thin-film transistor can be a ZnO TFT, a GaZnO TFT, an InZnO TFT, an AlZnO TFT, an InGaZnO TFT, or an IGZO TFT. Moreover, the N-type oxide thin-film transistor can be an N-type thin-film transistor made from multiple metal-oxide thin-film materials including ZnO, GaZnO, InZnO, AlZnO, InGaZnO, and IGZO, or can also be an N-type thin-film transistor made by stacking and combining at least two layers of the metal-oxide thin-film materials.
The first output control unit 114 includes a fifth transistor M5 which includes a gate, a source and a drain. The gate of the fifth transistor M5 is electrically connected to the pull-up node PU, the source of the fifth transistor M5 is electrically connected to the switch unit 113, and the drain of the fifth transistor M5 is electrically connected to the pull-down node PD. In this embodiment, the fifth transistor M5 is an N-type oxide thin-film transistor. The fifth transistor M5 can be a second output control transistor.
The start unit 115 includes a first transistor M1 which includes a gate, a source and a drain. The gate and the source of the first transistor M1 are electrically connected directly and receive the initial signal En at the same time, and the drain of the first transistor M1 is electrically connected to the pull-down node PD. That is, the first transistor M1 appears as a diode connection, in other words, the first transistor M1 is designed as a type of diode connection. In this embodiment, the first transistor M1 is a P-type LTPO transistor, and the first transistor M1 can be a start transistor.
The second output control unit 116 includes a fourth transistor M4 which includes a gate, a drain and a source. The gate of the fourth transistor M4 is electrically connected to the pull-down node PD, the source of the fourth transistor M4 is electrically connected to the second reference voltage end VGH, and the drain of the fourth transistor M4 is electrically connected to the pull-up node PU. In this embodiment, the fourth transistor M4 is an N-type oxide thin-film transistor, and the fourth transistor M4 can be a second output control transistor.
The pull-up output unit 117 includes a second transistor M2 which includes a gate, a drain and a source. The gate of the second transistor M2 is electrically connected to the pull-up node PU, the source of the second transistor M2 is electrically connected to the second reference voltage end VGH, and the drain of the second transistor M2 is electrically connected to the output end OUT. In this embodiment, the second transistor M2 is a P-type LTPO transistor, and the second transistor M2 can be a pull-up output transistor.
The pull-down output unit 118 includes a third transistor M3 and a capacitor C1. The third transistor M3 includes a gate, a drain and a source. The gate of the third transistor M3 is electrically connected to the pull-down node PD, the source of the third transistor M3 receives the clock signal CLKB, and the drain of the third transistor M3 is electrically connected to output end OUT. The capacitor C1 is electrically connected between the pull-down node PD and the output end OUT. In this embodiment, the third transistor M3 is a P-type LTPO transistor, and specifically, the third transistor M3 can be a pull-down output transistor.
In particular, the transistors of the pull-down unit 112, the start unit 115, the pull-up output unit 117 and the pull-down output unit 118 are the P-type LTPO transistors. The source of P-type TFT can accurately receive the second reference voltage Vgh as a fixed value. The larger the driving current of the P-type TFT is, the more the border area occupied by the pixel scan drive circuit can be reduced.
The N-type oxide thin-film transistors are used in the switch unit 113, the first output control unit 114 and the second output control unit 116. Thus, by reducing the leakage current of the pull-up node PU itself, it can quickly adapt to the refresh rate of different image data when displaying at high and low speeds. Moreover, because the leakage current is small, the pixel scan drive circuit 200 can fully match and adapt to the drive mode of low-power mode consumption.
In other embodiments of this disclosure, mirroring circuits of the pixel scan drive circuits of the embodiments in this disclosure are also within the scope of this disclosure. For example, the channel types of all the transistors in
In this disclosure, specific embodiments are used to illustrate the principle and the embodiments of the present disclosure, and the above embodiments are only used to help understand the core idea of the present disclosure. It should be noted that for those of ordinary skill in the art, several improvements and retouches can be made without departing from the principles of the embodiments of the present disclosure, and these improvements and retouches are also regarded as the protection scope of the present disclosure.
Number | Date | Country | Kind |
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201911340154.4 | Dec 2019 | CN | national |
Number | Name | Date | Kind |
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7522145 | Lee | Apr 2009 | B2 |
10957230 | Zheng | Mar 2021 | B2 |
20170025068 | Jeoung | Jan 2017 | A1 |
20170052635 | Yu | Feb 2017 | A1 |
20180240431 | Fei | Aug 2018 | A1 |
Entry |
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The Extended European Search Report issued corresponding EP Application No. EP 20217012.2, dated Apr. 14, 2021, pp. 1-20, European Patent Office, Munich, Germany. |
Number | Date | Country | |
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20210193050 A1 | Jun 2021 | US |