Claims
- 1. A magnetoresistive sensor comprising:
- a magnetic lower shield;
- an insulating layer of substantially uniform thickness deposited on the magnetic lower shield;
- a magnetoresistive element deposited on the insulating layer and including an active region having first and second side edges and a top surface;
- a first etch stop layer deposited adjacent the first side edge of the magnetoresistive element, the first etch stop layer having a top surface;
- a second etch stop layer deposited adjacent the second side edge of the magnetoresistive element, the second etch stop layer having a top surface, the top surfaces of the magnetoresistive element, the first etch stop layer, and second etch stop layer being substantially coplanar in a first plane;
- a track width oxide layer having a top surface, the track width oxide layer generally overlying the magnetoresistive element and defining the first and second side edges of the active region of the magnetoresistive element;
- a first contact/boundary control layer having a top surface, the first contact/boundary control layer positioned adjacent the track width oxide layer and generally overlying the first etch stop layer;
- a second contact/boundary control layer having a top surface, the second contact/boundary control layer positioned adjacent the track width oxide layer and generally overlying the second etch stop layer, the top surfaces of the track width oxide layer, the first contact/boundary control layer, and the second contact/boundary control layer being substantially coplanar in a second plane, the second plane being substantially parallel to the first plane;
- a magnetic upper shield over the magnetoresistive element; and
- a loft layer of substantial uniform thickness separating the magnetic upper shield from the first boundary contact/boundary control layer and the second contact/boundary control layer.
- 2. The magnetoresistive sensor of claim 1 wherein the first and second etch stop layers adjacent the magnetoresistive element comprise molybdenum.
- 3. The magnetoresistive sensor of claim 1 wherein the track width oxide layer has a thickness substantially equal to a thickness of the first and second contact/boundary control layers.
Parent Case Info
This is a divisional of application Ser. No. 07/761,001, filed Sep. 17, 1991, now U.S. Pat. No. 5,256,249.
US Referenced Citations (17)
Divisions (1)
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Number |
Date |
Country |
Parent |
761001 |
Sep 1991 |
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