Patent Application
20120049730
A technique disclosed here relates to a plasma display panel used in a display device.
A plasma display panel (hereinafter, referred to as the PDP) is composed of a front plate and a rear plate. The front plate is composed of a glass substrate, a display electrode formed on one main surface of the glass substrate, a dielectric layer to cover the display electrode and serve as a capacitor, and a protective layer formed on the dielectric layer and made of a magnesium oxide (MgO). Meanwhile, the rear plate is composed of a glass substrate, a data electrode formed on one main surface of the glass substrate, a base dielectric layer to cover the data electrode, a barrier rib formed on the base dielectric layer, and phosphor layers formed between the barrier ribs and emitting red, green, and blue lights, respectively.
The front plate and the rear plate are hermetically sealed with their electrode forming surfaces opposed to each other. A discharge gas such as neon (Ne) and xenon (Xe) is sealed in a discharge space sectioned by the barrier rib. The discharge gas causes discharge by a video signal voltage selectively applied to the display electrode. Ultraviolet rays generated by the discharge excite each phosphor layer. The excited phosphor layer emits red, green, or blue light. The PDP provides a color image display (refer to a patent document 1) as described above.
The protective layer mainly has four functions. A first function is to protect the dielectric layer from ion bombardment caused by the discharge. A second function is to emit initial electrons to generate data discharge. A third function is to retain electric charges to generate the discharge. A fourth function is to emit secondary electrons at the time of sustain discharge. When the dielectric layer is protected from the ion bombardment, a discharge voltage is prevented from rising. When the number of an initial electron emission is increased, a data discharge error causing flickering in an image is reduced. When charge retention performance is improved, an applied voltage is reduced. When the number of a secondary electron emission is increased, a sustain discharge voltage is reduced. In order to increase the number of the initial electron emission, an attempt to add silicon (Si) or aluminum (Al) to MgO of the protective layer is made (refer to patent documents 1, 2, 3, 4, and 5, for example).
PTL 1: Unexamined Japanese Patent Publication No. 2002-260535
PTL 2: Unexamined Japanese Patent Publication No. 11-339665
PTL 3: Unexamined Japanese Patent Publication No. 2006-59779
PTL 4: Unexamined Japanese Patent Publication No. 8-236028
PTL 5: Unexamined Japanese Patent Publication No. 10-334809
A PDP includes a front plate, a rear plate arranged so as to be opposed to the front plate, and a bonding layer to bond the front plate to the rear plate. The front plate has a dielectric layer, and a protective layer to cover the dielectric layer. The rear plate has a base dielectric layer, a plurality of barrier ribs formed on the base dielectric layer, and a phosphor layer formed on the base dielectric layer and a side surface of the barrier rib. The protective layer includes a base layer formed on the dielectric layer. Aggregated particles composed of aggregated crystal particles made of a magnesium oxide are dispersed all over the base layer. The base layer contains at least a first metal oxide and a second metal oxide. The base layer has at least one peak through an X-ray diffraction analysis. The peak exists between a first peak of the first metal oxide through an X-ray diffraction analysis, and a second peak of the second metal oxide through an X-ray diffraction analysis. The first peak and the second peak show the same surface orientation as a surface orientation shown by the peak. The first metal oxide and the second metal oxide are composed of two kinds of oxides selected from a group consisting of a magnesium oxide, a calcium oxide, a strontium oxide, and a barium oxide. The rear plate has a barrier rib. The bonding layer bonds at least one part of the barrier rib to the protective layer.
A basic structure of a PDP corresponds to that of a general AC plane discharge type PDP. As shown in
Belt-shaped display electrodes 6 each composed of a pair of scan electrode 4 and sustain electrode 5, and black stripes 7 are arranged on front glass substrate 3 so as to be parallel to each other. Dielectric layer 8 serving as a capacitor is formed on front glass substrate 3 so as to cover display electrodes 6 and black stripes 7. In addition, protective layer 9 composed of MgO is formed on a surface of dielectric layer 8. In addition, as shown in
Each of scan electrode 4 and sustain electrode 5 is constituted in such a manner that a bus electrode containing Ag is laminated on a transparent electrode composed of a conductive metal oxide such as an indium tin oxide (ITO), a tin dioxide (SnO2), or a zinc oxide (ZnO).
Data electrodes 12 each composed of a conductive material mainly containing silver (Ag) are arranged parallel to each other on rear glass substrate 11, in a direction perpendicular to display electrodes 6. Data electrode 12 is covered with base dielectric layer 13. Furthermore, barrier rib 14 having a predetermined height is formed on base dielectric layer 13 to section discharge space 16, between data electrodes 12. Barrier rib 14 includes first barrier rib 14a arranged in a direction intersecting with display electrode 6, and second barrier rib 14b perpendicular to first barrier rib 14a. Phosphor layer 15 emitting red light, phosphor layer 15 emitting green light, and phosphor layer 15 emitting blue light under ultraviolet rays are sequentially applied and formed with respect to each data electrode 12, on base dielectric layer 13 and on a side surface of barrier rib 14. A discharge cell is formed at an intersecting position of display electrode 6 and data electrode 12. The discharge cell having red, green, and blue phosphor layers 15 arranged in a direction along display electrode 6 serves as a pixel for a color display.
As shown in
In addition, according to this embodiment, the discharge gas sealed in discharge space 16 contains 10 vol. % to 30 vol. % of Xe.
Next, a method for producing PDP 1 will be described.
First, a method for producing front plate 2 will be described. Scan electrode 4, sustain electrode 5, and black stripe 7 are formed on front glass substrate 3 by photolithography. Scan electrode 4 and sustain electrode 5 have bus electrodes 4b and 5b containing Ag, respectively to ensure conductivity. In addition, scan electrode 4 and sustain electrode 5 have transparent electrodes 4a and 5a, respectively. Bus electrode 4b is laminated on transparent electrode 4a. Bus electrode 5b is laminated on transparent electrode 5a.
Transparent electrodes 4a and 5a are each made of ITO to ensure transparency and electric conductivity. First, an ITO thin film is formed on front glass substrate 3 by sputtering. Then, transparent electrodes 4a and 5a are formed into predetermined patterns by lithography.
For bus electrodes 4b and 5b, a white paste containing Ag, a glass frit to bind Ag, a photosensitive resin, and a solvent is used. First, the white paste is applied onto front glass substrate 3 by screen printing. Then, the solvent is removed from the white paste in a furnace. Then, the white paste is exposed with a photomask having a predetermined pattern put thereon.
Then, the white paste is developed, and a bus electrode pattern is formed. Finally, the bus electrode pattern is fired at a predetermined temperature in the furnace. That is, the photosensitive resin is removed from the bus electrode pattern. In addition, the glass frit melts in the bus electrode pattern. The molten glass frit becomes glass after fired. Through the above steps, bus electrodes 4b and 5b are formed.
Black stripe 7 is made of a material containing a black pigment. Then, dielectric layer 8 is formed. For dielectric layer 8, a dielectric paste containing a dielectric glass frit, a resin, and a solvent is used. First, the dielectric paste is applied onto front glass substrate 3 by die-coating so as to have a predetermined thickness to cover scan electrode 4, sustain electrode 5, and black stripe 7. Then, the solvent is removed from the dielectric paste in a furnace. Finally, the dielectric paste is fired at a predetermined temperature in the furnace. That is, the resin is removed from the dielectric paste. In addition, the dielectric glass frit melts. The molten dielectric glass frit becomes glass after fired. Through the above steps, dielectric layer 8 is formed. Here, the dielectric paste may be applied by screen printing, or spin-coating other than the die-coating. In addition, dielectric layer 8 may be formed by CVD (Chemical Vapor Deposition) without using the dielectric paste. Dielectric layer 8 will be described below in detail.
Then, protective layer 9 is formed on dielectric layer 8. Protective layer 9 will be described below in detail.
Through the above steps, scan electrode 4, sustain electrode 5, black stripe 7, dielectric layer 8, and protective layer 9 are formed on front glass substrate 3, whereby front plate 2 is completed.
Next, a method for producing rear plate 10 will be described. Data electrode 12 is formed on rear glass substrate 11 by photolithography. For data electrode 12, a data electrode paste containing Ag to ensure conductivity, a glass frit to bind Ag, a photosensitive resin, and a solvent is used. First, the data electrode paste is applied onto rear glass substrate 11 by screen printing so as to have a predetermined thickness. Then, the solvent is removed from the data electrode paste in a furnace. Then, the data electrode paste is exposed with a photomask having a predetermined pattern put thereon. Then, the data electrode paste is developed, whereby a data electrode pattern is formed. Finally, the data electrode pattern is fired at a predetermined temperature in the furnace. That is, the photosensitive resin is removed from the data electrode pattern. In addition, the glass frit melts in the data electrode pattern. The molten glass frit becomes glass after fired. Through the above steps, data electrode 12 is formed. Here, the data electrode paste may be applied by sputtering or vapor deposition other than the screen printing.
Then, base dielectric layer 13 is formed. For base dielectric layer 13, a base dielectric paste containing a dielectric glass frit, a resin, and a solvent is used. First, the base dielectric paste is applied onto rear glass substrate 11 having data electrode 12 by screen printing so as to have a predetermined thickness and to cover data electrode 12. Then, the solvent is removed from the base dielectric paste in a furnace. Finally, the base dielectric paste is fired at a predetermined temperature in the furnace. That is, the resin is removed from the base dielectric paste. In addition, the dielectric glass frits melts. The molten glass frit becomes glass after fired. Through the above steps, base dielectric layer 13 is formed. Here, the base dielectric paste may be applied by die-coating or spin-coating other than the screen printing. In addition, base dielectric layer 13 may be formed by CVD without using the base dielectric paste.
Then, barrier rib 14 is formed by photolithography. For barrier rib 14, a barrier rib paste containing a filler, a glass frit to bind the filler, a photosensitive resin, and a solvent is used. First, the barrier rib paste is applied onto base dielectric layer 13 by die-coating so as to have a predetermined thickness. Then, the solvent is removed from the barrier rib paste in a furnace. Next, the barrier rib paste is exposed with a photomask having a predetermined pattern put thereon. Then, the barrier rib paste is developed and a barrier rib pattern is formed. Finally, the barrier rib pattern is fired at a predetermined temperature in the furnace. That is, the photosensitive resin is removed from the barrier rib pattern. In addition, the glass frit melts in the barrier rib pattern. The molten glass frit becomes glass after fired. Through the above steps, barrier rib 14 is formed. Here, sandblasting may be used instead of the photolithography.
Then, bonding layer 17 is formed on barrier rib 14 by screen printing. A method for producing bonding layer 17 will be described below in detail.
Then, phosphor layer 15 is formed. For phosphor layer 15, a phosphor paste containing phosphor particles, a binder, and a solvent is used. First, the phosphor paste is applied onto base dielectric layer 13 provided between adjacent barrier ribs 14 and onto the side surface of barrier rib 14 by dispensing, so as to have a predetermined thickness. Then, the solvent is removed from the phosphor paste in a furnace. Finally, the phosphor paste is fired at a predetermined temperature in the furnace. That is, the resin is removed from the phosphor paste. Through the above steps, phosphor layer 15 is formed. Here, screen printing or ink-jet printing may be used instead of the dispensing. Phosphor layer 15 will be described below in detail.
Through the above steps, rear plate 10 having the predetermined components on rear glass substrate 11 is completed.
Then, front plate 2 and rear plate 10 are assembled. First, a sealing material (not shown) is formed around rear plate 10 by dispensing. A region on which the sealing material is arranged is provided outside the display region. For the sealing material (not shown), a sealing paste containing a first glass member, a binder, and a solvent is used. For example, the first glass member is composed of a glass flit majorly containing a dibismuth trioxide (Bi2O3), a diboron trioxide (B2O3), or a divanadium pentoxide (V2O5). For example, Bi2O3—B2O3—RO-MO series glass is used. Here, R is any one of barium (Ba), strontium (Sr), calcium (Ca), and magnesium (Mg). In addition, M is any one of copper (Cu), antimony (Sb), and iron (Fe). Furthermore, V2O5—BaO—TeO—WO series glass may be used. In addition, sealing member 22 may be provided by adding a filler composed of an oxide such as a dialuminum trioxide (Al2O3), a silicon dioxide (SiO2), or a cordierite to the first glass member. A softening point of the first glass member is 460° C. to 480° C. The solvent is removed from the sealing paste with the glass frit and then in a furnace. Then, front plate 2 and rear plate 10 are oppositely arranged so that display electrode 6 and data electrode 12 are perpendicular to each other. Then, the peripheries of front plate 2 and rear plate 10 are sealed with the glass frit. In addition, a softening point of the sealing member is about 470° C. In addition, a heat treatment temperature at the time of sealing (hereinafter, referred to as the sealing temperature) is 488° C., and an exhaust temperature is 420° C. Finally, the discharge gas containing Ne or Xe is sealed in discharge space 16 at a pressure of 53 kPa to 80 kPa, whereby PDP 1 is completed.
Hereinafter, dielectric layer 8 will be described in detail. Dielectric layer 8 is composed of first dielectric layer 81 and second dielectric layer 82. Second dielectric layer 82 is laminated on first dielectric layer 81.
A dielectric material of first dielectric layer 81 contains 20 wt. % to 40 wt. % of a dibismuth trioxide (Bi2O3), 0.5 wt. % to 12 wt. % of at least one component selected from a group consisting of a calcium oxide (CaO), a strontium oxide (SrO), and a barium oxide (BaO), and 0.1 wt. % to 7 wt. % of at least one component selected from a group consisting of a molybudenum trioxide (MoO3), a tungsten trioxide (WO3), a cerium dioxide (CeO2), and a manganese dioxide (MnO2).
In addition, instead of the group consisting of MoO3, WO3, CeO2, and MnO2, it may contain 0.1 wt. % to 7 wt. % of at least one component selected from a group consisting of a copper oxide (CuO), a dichrome trioxide (Cr2O3), a dicobalt trioxide (CO2O3), a divanadium heptaoxide (V2O7), and a diantimony trioxide (Sb2O2).
In addition, as a component other than the above components, it may contain 0 wt. % to 40 wt. % of ZnO, 0 wt. % to 35 wt. % of diboron trioxide (B2O3), 0 wt. % to 15 wt. % of silicon dioxide (SiO2), and 0 wt. % to 10 wt. % of dialuminum trioxide (Al2O3), as a component not containing a zinc component.
The dielectric material is ground by wet jet milling or ball milling so that its average grain diameter becomes 0.5 μm to 2.5 μm, whereby dielectric material powder is produced. Then, 55 wt. % to 70 wt. % of this dielectric material powder and 30 wt. % to 45 wt. % of a binder component are kneaded well with three rolls, whereby a first dielectric layer paste to be subjected to die-coating or printing is completed.
The binder component is ethyl cellulose, terpineol containing 1 wt. % to 20 wt. % of an acrylic resin, or butyl carbitol acetate. In addition, in the paste, if needed, dioctyl phthalate, dibutyl phthalate, triphenyl phosphate, or tributyl phosphate may be added as a plasticizer. In addition, glycerol monooleate, sorbitan sesquioleate, homogenol (produced by Kao Corporation), or alkyl aryl group ester phosphate may be added as a dispersant. When the dispersant is added, printing characteristics are improved.
The first dielectric layer paste covers display electrode 6, and is printed on front glass substrate 3 by die-coating or screen printing. The printed first dielectric layer paste is dried and fired at a temperature of 575° C. to 590° C. which is a little higher than a softening point of the dielectric material, whereby first dielectric layer 81 is formed.
Next, second dielectric layer 82 will be described. A dielectric material of second dielectric layer 82 contains 11 wt. % to 20 wt. % of Bi2O3, 1.6 wt. % to 21 wt. % of at least one component selected from CaO, SrO, and BaO, and 0.1 wt. % to 7 wt. % of at least one component selected from MoO3, WO3, and CeO2.
In addition, instead of MoO3, WO3, and CeO2, it may contain 0.1 wt. % to 7 wt. % of at least one component selected from CuO, Cr2O3, CO2O3, V2O7, Sb2O3, and MnO2.
In addition, as a component other than the above components, it may contain 0 wt. % to 40 wt. % of ZnO, 0 wt. % to 35 wt. % of B2O3, 0 wt. % to 15 wt. % of SiO2, and 0 wt. % to 10 wt. % of Al2O3, as a component not containing a zinc component.
The dielectric material is ground by wet jet milling or ball milling so that its average grain diameter becomes 0.5 μm to 2.5 μm, whereby dielectric material powder is produced. Then, 55 wt. % to 70 wt. % of this dielectric material powder and 30 wt. % to 45 wt. % of a binder component are kneaded well with three rolls, whereby a second dielectric layer paste to be subjected to die-coating or printing is completed.
The binder component is ethyl cellulose, terpineol containing 1 wt. % to 20 wt. % of an acrylic resin, or butyl carbitol acetate. In addition, in the paste, if needed, dioctyl phthalate, dibutyl phthalate, triphenyl phosphate, or tributyl phosphate may be added as a plasticizer. In addition, glycerol monooleate, sorbitan sesquioleate, homogenol (produced by Kao Corporation), or alkyl aryl group ester phosphate may be added as a dispersant. When the dispersant is added, printing characteristics are improved.
The second dielectric layer paste is printed on first dielectric layer 81 by die-coating or screen printing. The printed second dielectric layer paste is dried and fired at a temperature of 550° C. to 590° C. which is a little higher than the softening point of the dielectric material, whereby second dielectric layer 82 is formed.
In addition, a film thickness of dielectric layer 8 is preferably 41 μm or less, combining thicknesses of first dielectric layer 81 and second dielectric layer 82, to ensure visible light transmission.
First dielectric layer 81 contains 20 wt. % to 40 wt. % of Bi2O3 which is higher than that of Bi2O3 contained in second dielectric layer 82, in order to prevent a reaction with Ag of bus electrodes 4b and 5b. Thus, since visible light transmission of first dielectric layer 81 is lower than visible light transmission of second dielectric layer 82, a film thickness of first dielectric layer 81 is formed to be smaller than a film thickness of second dielectric layer 82.
When a content of Bi2O3 of second dielectric layer 82 is 11 wt. % or less, color is not likely to be generated, but air bubbles are likely to be generated in second dielectric layer 82. Therefore, it is not preferable that the content of Bi2O3 is less than 11 wt. %. Meanwhile, when the content of Bi2O3 exceeds 40 wt. %, the color is likely to be generated, so that the visible light transmission is lowered. Therefore, it is not preferable that the content of Bi2O3 exceeds 40 wt. %.
In addition, as the film thickness of dielectric layer 8 decreases, brightness is improved and a discharge voltage is reduced. Therefore, the film thickness is preferably set to be smaller to the extent that a breakdown voltage is not lowered.
In view of the above description, according to this embodiment, the film thickness of dielectric layer 8 is set at 41 μm or less, in which first dielectric layer 81 is 5 μm to 15 μm in thickness, and second dielectric layer 82 is 20 μm to 36 μm in thickness.
According to PDP 1 produced as described above, it has been confirmed that dielectric layer 8 can prevent a coloring phenomenon (change into yellow) from occurring on front glass substrate 3, and air bubbles from being generated in dielectric layer 8, and is superior in breakdown voltage performance even when the Ag material is used in display electrode 6.
Next, consideration is given to a reason why the change into yellow and generation of the air bubbles are prevented in first dielectric layer 81 by the dielectric material, in PDP 1 according to this embodiment. That is, it is known that when MoO3, or WO3 is added into dielectric glass containing Bi2O3, a compound such as Ag2MoO4, Ag2Mo2O7, Ag2Mo4O13, Ag2WO4, Ag2W2O7, or Ag2W4O13 is likely to be generated at a low temperature of 580° C. or less. According to this embodiment, since the firing temperature of dielectric layer 8 is 550° C. to 590° C., silver ions (Ag+) diffused in dielectric layer 8 during the firing process react with MoO3, WO3, CeO2, or MnO2 in dielectric layer 8, generate a stable compound, and are stabilized. That is, since the Ag+ are stabilized without being reduced, they are not aggregated and do not generate colloid. Therefore, since Ag+ is stabilized, oxygen generation due to the colloid of Ag is reduced, so that the generation of the air bubbles is reduced in dielectric layer 8.
Meanwhile, in order to efficiently provide the above effect, the content of MoO3, WO3, CeO2, or MnO2 is preferably 0.1 wt. % or more, or more preferably 0.1 wt. % to 7 wt. %, in the dielectric glass containing Bi2O3. Here, when the content is less than 0.1 wt. %, the change into yellow is less prevented, and when the content exceeds 7 wt. %, the glass is uncomfortably colored.
That is, according to dielectric layer 8 of PDP 1 in this embodiment, first dielectric layer 81 which is in contact with bus electrodes 4b and 5b composed of the Ag material prevents the change into yellow and air bubble generation, and second dielectric layer 82 provided on first dielectric layer 81 achieves the high light transmission. As a result, dielectric layer 8, as a whole, can prevent the air bubbles and change into yellow from being generated and achieve high transmission in the PDP.
Protective layer 9 includes base film 91 serving as the base layer and aggregated particles 92. Base film 91 includes at least first metal oxide and a second metal oxide. The first metal oxide and the second metal oxide are composed of two kinds of components selected from a group of MgO, CaO, SrO and BaO. In addition, base film 91 has at least one peak through an X-ray diffraction analysis. This peak exists between a first peak of the first metal oxide through an X-ray diffraction analysis and a second peak of the second metal oxide through an X-ray diffraction analysis. The first peak and the second peak show the same surface orientation of a surface orientation shown by the peak of base film 91.
Referring to
As shown in
According to PDP 1 in this embodiment, base film 91 of protective layer 9 contains at least two metal oxides selected from the group of MgO, CaO, SrO, and BaO.
As shown in
In addition,
As shown in
Thus, base film 91 of PDP 1 in this embodiment includes at least the first metal oxide and the second metal oxide. In addition, base film 91 has at least one peak through the X-ray diffraction analysis. This peak exists between the first peak of the first metal oxide through an X-ray diffraction analysis and the second peak of the second metal oxide through an X-ray diffraction analysis. The first peak and the second peak show the same surface orientation as the surface orientation shown by the peak of base film 91. The first metal oxide and the second metal oxide are composed of the two components selected from the group of MgO, CaO, SrO, and BaO.
In addition, the description has been made using the crystal surface orientation of (111) in the above, but even when another surface orientation is used, the position of the peak of the metal oxide is the same as above.
Depths of CaO, SrO, and BaO from a vacuum level are smaller than that of MgO. Therefore, when PDP 1 is driven, it is considered that the number of electrons discharged due to the Auger effect while the electrons existing in energy levels of CaO, SrO, and BaO are moved to the ground state of the Xe ion is greater than that of the electrons which are moved from an energy level of MgO.
In addition, as described above, the peak of base film 91 in this embodiment exists between the peak of the first metal oxide and the peak of the second metal oxide. That is, it is considered that the energy level of base film 91 exists between the simple metal oxides, and the number of electrons discharged due to the Auger effect is greater than that of the electrons which are moved from the energy level of MgO.
As a result, compared to the MgO simple substance, base film 91 can show preferable secondary electron emission characteristics, so that it can reduce a discharge sustain voltage. Therefore, when Xe partial pressure is increased as a discharge gas to enhance the brightness especially, the discharge voltage is lowered, and high-brightness and low-voltage PDP 1 can be realized.
Table 1 shows a result of a discharge sustain voltage obtained when a mixture gas (Xe, 15%) of Xe and Ne is sealed at 60 kPa, while changing the composition of base film 91, in PDP 1 in this embodiment.
In addition, a discharge sustain voltage is represented by a relative value when a value of a comparison example is set at “100”. Base film 91 of a sample A is composed of MgO and CaO. Base film 91 of a sample B is composed of MgO and SrO. Base film 91 of a sample C is composed of MgO and BaO. Base film 91 of a sample D is composed of MgO, CaO, and SrO. Base film 91 of a sample E is composed of MgO, CaO, and BaO. In addition, as for the comparison example, base film 91 is formed of the MgO simple substance.
When the partial pressure of Xe of the discharge gas is increased from 10% to 15%, the brightness is increased by about 30%, but the discharge sustain voltage is increased by about 10%, in the comparison example in which base film 91 is composed of MgO.
Meanwhile, according to the PDP in this embodiment, the discharge sustain voltages in the sample A, the sample B, the sample C, the sample D, and the sample E can be all reduced by about 10% to 20% compared to the comparison example. Therefore, they can be a discharge start voltage within a normal operation range, so that the PDP can be high in brightness and driven at low voltage.
In addition, CaO, SrO, or BaO is high in reactivity when it is provided as the simple substance, so that it is likely to react with the impurity, and the electron emission performance is problematically lowered. However, according to this embodiment, since the metal oxides are combined, a crystal structure is provided so that the reactivity is lowered, the impurity is hardly mixed, and an oxygen defect is small. Therefore, the electrons are prevented from being emitted excessively when the PDP is driven, and in addition to both effects of the low voltage drive and the secondary electron emission performance, an effect of appropriate electron sustaining characteristics can be provided. This charge sustaining characteristics is especially very effective when under the condition that a wall charges stored in an initialization period are retained, an address discharge is surely performed while preventing an address defect during an address period.
Next, aggregated particle 92 provided on base film 91 according to this embodiment will be described in detail.
As shown in
Aggregated particle 92 has an average particle diameter of 0.3 μm to 2.5 μm. In this embodiment, the average particle diameter means a volume accumulation average diameter (D50). In addition, the average particle diameter is measured by a laser diffraction type particle size distribution measurement device MT-3300 (produced by Nikkiso Co., Ltd.).
Crystal particles 92a are not connected by strong bonding force as a solid in the aggregated particle 92. Aggregated particle 92 is composed of a plurality of crystal particles 92a bonded by static electricity or van der Waals' force. In addition, the aggregated particle 92 is partially or wholly decomposed to the state of crystal particle 92a by external force such as an ultrasonic wave. Aggregated particle 92 has the average particle diameter of about 1 μm, and crystal particle 92a is in the form of a polyhedron having seven or more faces such as a tetradodecahedron or dodecahedron. In addition, crystal particle 92a can be produced by gas phase synthesis or a precursor firing which will be described below.
According to the gas phase synthesis, a magnesium (Mg) metal material having purity of 99.9% or more is heated in an atmosphere filled with an inert gas. Then, it is heated in an atmosphere added with a little amount of oxygen, so that Mg is directly oxidized. Thus, crystal particle 92a of MgO is produced.
Meanwhile, according to the precursor firing, crystal particle 92a is produced in the following method. In the case of the precursor firing, a precursor of MgO is uniformly fired at a high temperature of 700° C. or more. Then, it is gradually cooled down, whereby crystal particle 92a of MgO is produced. The precursor may be a compound composed of at least one kind or more of components selected from magnesium alkoxide (Mg(OR)2), magnesium acetylacetone (Mg(acac)2), magnesium hydroxide (Mg(OH)2), magnesium carbonate (MgCO2), magnesium chloride (MgCl2), magnesium sulfate (MgSO4), magnesium nitrate (Mg(NO3)2), and magnesium oxalate (MgC2O4).
In addition, depending on the selected compound, the compound takes the form of a hydrate in a normal state, and the hydrate may be used. The compound is adjusted such that purity of MgO obtained after fired is to be 99.95% or more, or preferably 99.98% or more. When a certain amount or more of an impurity element of alkali metal such as B, Si, Fe, or Al is mixed in the compound, the particles are unnecessarily bonded to each other or fired during the heat treatment, and in this case, it is hard to obtain crystal particle 92a of MgO having high crystallinity. Thus, it is necessary to previously adjust the precursor by removing the impurity element. By adjusting a firing temperature or a firing atmosphere in the precursor firing, the particle diameter can be controlled. The firing temperature can be selected within a range of 700° C. to 1500° C. When the firing temperature is 1000° C. or more, a primary particle diameter can be controlled to be 0.3 to 2 μm. Crystal particles 92a are aggregated to each other while being generated by the precursor firing to become aggregated particle 92.
It has been confirmed that aggregated particle 92 of MgO provides an effect to prevent a discharge delay mainly generated in the address discharge, and an effect to improve temperature dependency of the discharge delay, through experiments of the present inventor. Thus, according to this embodiment, since aggregated particle 92 has a feature superior in initial electron emission characteristics, compared to base film 91, it is arranged as a part to supply an initial electron required when a discharge pulse rises.
It is considered that the discharge delay is mainly caused by deficiency in amount of initial electrons emitted from the surface of base film 91 to discharge space 16 to serve as a trigger at the start of discharge. Thus, aggregated particles 92 of MgO are dispersed on the surface of base film 91 in order to contribute to stable supply of the initial electrons to discharge space 16. Thus, the electrons sufficiently exist in discharge space 16 when the discharge pulse rises, so that the problem of the discharge delay can be solved. Therefore, due to the initial electron emission characteristics, high-definition PDP 1 is also superior in discharge responsiveness and can be driven at high speed. In addition, when aggregated particles 92 of the metal oxide are arranged on the surface of base film 91, in addition to the main effect to prevent the discharge delay in the address discharge, the effect to improve the temperature dependency of the discharge delay is provided.
As described above, PDP 1 in this embodiment includes base film 91 which provides both effects of the low voltage driving and the charge retention, and aggregated particles 92 of MgO which provides the effect of the prevention of the discharge delay, so that the high-definition PDP can be driven at high speed and low voltage in PDP 1 as a whole, and high-grade image display performance can be realized by preventing a lighting defect.
In addition,
As can be clear from
Next, a description will be made of a result of an experiment performed to confirm the effect of PDP 1 having protective layer 9 according to this embodiment.
First, PDPs 1 having different protective layers 9 are produced experimentally. Sample 1 is PDP 1 in which protective layer 9 is only formed of MgO. Sample 2 is PDP 1 in which protective layer 9 is formed of MgO doped with an impurity such as Al or Si. Sample 3 is PDP 1 in which only primary particles of crystal particles 92a formed of MgO are dispersed and attached on protective layer 9 formed of MgO.
Meanwhile, a sample 4 is PDP 1 according to this embodiment. The sample 4 is PDP 1 in which aggregated particles 92 composed of aggregated crystal particles 92a formed of MgO and having the same particle diameter are dispersed all over base film 92 formed of MgO. The above-described sample A is used for protective layer 9. That is, protective layer 9 is composed of that base film 91 is composed of MgO and CaO, and aggregated particles 92 composed of aggregated crystal particles 92a uniformly distributed all over base film 91. In addition, base film 91 has the peak between the peak of the first metal oxide and the peak of the second metal oxide of base film 91, through the X-ray diffraction analysis of the surface of base film 91. That is, the first metal oxide is MgO, and the second metal oxide is CaO. Thus, the diffraction angle of the peak of MgO is 36.9 degrees, the diffraction angle of the peak of CaO is 32. 2 degrees, and the diffraction angle of the peak of base film 91 is 36.1 degrees.
Electron emission performance and charge retention performance are measured on PDPs 1 having four kinds of protective layers.
In addition, as for the electron emission performance, as its value increases, an electron emission amount increases. The electron emission performance is expressed by an initial electron emission amount determined by a surface state of the discharge, a gas kind, and its state. The initial electron emission amount can be obtained by measuring an electronic current amount emitted from the surface when the surface is irradiated with an ion or electron beam. However, it is difficult to make a measurement by a nondestructive way. Thus, a method disclosed in a Japanese Unexamined Patent Publication No. 2007-48733 is used. That is, among the delay times at the time of discharge, a value which is an indication of ease of discharge generation, called a statistical delay time is measured. When an inverse number of the statistical delay time is integrated, an obtained value linearly corresponds to the emission amount of the initial electrons. The delay time at the time of discharge corresponds to a time from rising of an address discharge pulse until the address discharge generated later. The discharge delay is supposed to be mainly caused because the initial electron serving as the trigger to generate the address discharge is not easily emitted from the protective layer surface to the discharge space.
The charge retention performance is expressed, as its index, by a voltage value of a voltage (hereinafter, referred to as the Vscn lighting voltage) applied to the scan electrode to prevent an electric charge emission phenomenon in PDP 1. The lower the Vscn lighting voltage is, the higher the charge retention ability is. When the Vscn lighting voltage is low, the PDP can be driven at a low voltage. Thus, a component which is low in breakdown voltage and low in capacity can be used as a power supply or an electric component. As for a current product, an element having a breakdown voltage as low as 150 V is used as a semiconductor switching element such as a MOSFET provided to sequentially apply the scan voltage to the panel. The Vscn lighting voltage is preferably suppressed to 120 V or lower in view of a variation due to temperature.
The electron emission performance and the charge retention performance of the above PDPs 1 are examined and their results are shown in
Thus, the evaluation is made using this numeric value. The delay time at the time of discharge corresponds to the time from rising of the pulse until the discharge generated later, and the discharge delay is supposed to be mainly caused because the initial electron serving as the trigger to start the discharge is not easily emitted from the surface of protective layer 9 to the discharge space.
The charge retention performance is expressed, as its index, by the voltage value of the voltage (hereinafter, referred to as the Vscn lighting voltage) applied to the scan electrode to prevent the electric charge emission phenomenon in PDP 1. That is, the lower the Vscn lighting voltage is, the higher the charge retention ability is. Thus, the component which is low in breakdown voltage and low in capacity can be used as the power supply or the electric component when PDP 1 is designed. As for the current product, the element having the breakdown voltage as low as 150 V is used as the semiconductor switching element such as the MOSFET provided to sequentially apply the scan voltage to the panel, and the Vscn lighting voltage is suppressed to preferably 120 V or lower in view of a variation due to temperature.
As can be clearly understood from
In general, the electron emission ability of the protective layer contradicts with the charge retention ability thereof. For example, the electron emission performance can be improved by changing a condition for forming the protective layer, or doping an impurity such as Al, Si, or Ba in the protective layer in a film formation process. However, the Vscn lighting voltage also rises as an adverse effect.
According to the PDP having protective layer 9 in this embodiment, the electron emission performance is 8 or more, and as for the charge retention performance, the Vscn is 120 V or less. That is, protective layer 9 can be provided with the electron emission ability and the charge retention ability which can cope with the PDP in which the number of scan lines is great due to high definition, and a cell size tends to be miniaturized.
Next, a detailed description will be made of the average particle diameter of aggregated particle 92 used in protective layer 9 of PDP 1 according to this embodiment. In addition, in the following description, the particle diameter means the average particle diameter, and the average particle diameter means the volume accumulation average diameter (D50).
As shown in
In order to increase the number of emitted electrons in the discharge cell, the number of crystal particles per unit area of protective layer 9 is preferably large. According to an experiment made by the present inventors, when crystal particle 92a exists in a part corresponding to a top of barrier rib 14 which is closely in contact with protective layer 9, it could damage the top of barrier rib 14. In this case, it is found that a material of damaged barrier rib 14 covers the phosphor, so that the corresponding cell is not normally turned on or off. The damage in the barrier rib is not likely to be caused when crystal particle 92a does not exist at the part corresponding to the barrier rib top, so that as the number of attached crystal particles increases, a probability of damage generation of barrier rib 14 becomes high.
According to PDP 1 having protective layer 9 in this embodiment, the electron emission performance is 8 or more, and as for the charge retention performance, the Vscn lighting voltage is 120 V or less.
In addition, while the description has been made with the MgO particles as crystal particles in the above, the kind of the particle is not limited to MgO because the same effect can be provided even with a crystal particle of a metal oxide such as Sr, Ca, Ba, or Al having high electron emission performance like MgO.
Next, a description will be made of steps of producing protective layer 9 in PDP 1 according to this embodiment, with reference to
As shown in
Then, aggregated particles 92 are discretely applied and attached on base film 91 before fired. That is, aggregated particles 92 are dispersed over the whole surface of base film 91.
In this step, first, aggregated particle paste is made by mixing aggregated particles 92 in a solvent. Then, the aggregated particle paste is applied on base film 91 in a paste applying step, whereby an aggregated particle paste film having an average film thickness of 8 μm to 20 μm is formed. In addition, the method for applying the aggregated particle paste on base film 91 may include screen printing, spraying, spin-coating, die-coating, and slit-coating.
Here, the solvent used in producing the aggregated particle paste preferably has high affinity with base film 91 and aggregated particle 92, and has vapor pressure of several tens of Pa at normal temperature to easily remove vapor in a next drying step. For example, an organic solvent simple substance such as methoxy methyl butanol, terpineol, propylene glycol, or benzyl alcohol, or their mixed solvent may be used. Viscosity of the paste containing the above solvent is several mPa·s to several tens of mPa·s.
The substrate having the aggregated particle paste is immediately moved to the drying step. The aggregated particle paste film is dried under reduced pressure in the drying step. More specifically, the aggregated particle paste film is rapidly dried within several tens of seconds in a vacuum chamber. Thus, convection which is noticeably generated in a drying process by heating is not generated. Therefore, aggregated particles 92 are more uniformly attached on base film 91. In addition, the drying method in this drying step may be performed by heating, depending on a solvent used in producing the aggregated particle paste.
Then, unfired base film 91 formed in the base film vapor deposition step, and the aggregated particle paste film subjected to the drying step are fired at several hundreds of degrees of temperature at the same time in a firing step. Through the firing step, the solvent and the resin component are removed from the aggregated particle paste film. As a result, aggregated particles 92 composed of polyhedral crystal particles 92a are attached on base film 91, whereby protective layer 9 is completed.
According to this method, aggregated particles 92 can be diffused all over base film 91.
In addition, other than the above method, without using the solvent, a method for directly spraying a particle group together with a gas, or a method for simply diffusing it by use of gravity may be used.
Recently, in order to reduce a weight of PDP 1, a glass substrate having a thinner thickness has been used for front glass substrate 3 and rear glass substrate 11. In addition, in tandem with penetration of the high-definition PDP 1, a width of barrier rib 14 is being further narrowed. Mechanical strength of PDP 1 depends on strength of the glass substrate itself, and strength of a bonding part between front plate 2 and rear plate 10. The bonding part is provided between the region having the sealing material, barrier rib 14, and front plate 2. That is, in order to achieve the lightweight and the high definition of PDP 1, it is important to prevent the mechanical strength of PDP 1 from being lowered.
Thus, as shown in
In addition, according to this embodiment, as shown in
The second glass member contained in bonding layer 17 is preferably a glass frit containing Bi2O3 and B2O3. The material Bi2O3 increases a thermal expansion coefficient, and lowers the softening point. That is, it has an effect to enhance bonding force. The material B2O3 forms a glass framework. Furthermore, the material B2O3 lowers the thermal expansion coefficient, and raises the softening point. As the glass frit, Bi2O3—B2O3—ZnO—SiO2—RO series glass is used. Here, R is any one of Ba, Sr, Ca, and Mg.
In addition, a molar ratio of Bi2O3 and B2O3 is preferably 1:0.5 to 1:1.5. Since Bi2O3 prevents B2O3 from being crystallized, preferable bonding force can be provided in this range. In addition, the molar ratio of Bi2O3 and B2O3 is more preferably 1:0.8 to 1:1.2. More preferable bonding force can be provided in this range.
In addition, the second glass member more preferably contains 10 mol % to 40 mol % of Bi2O3 and contains 10 mol % to 40 mol % of B2O3. When Bi2O3 is less than 10 mol %, the bonding force is lowered. Meanwhile, when Bi2O3 exceeds 40 mol %, the second glass member is crystallized at the time of sealing, that is, the bonding force is lowered. In addition, the second glass member more preferably contains 20 mol % to 40 mol % of Bi2O3 and contains 20 mol % to 40 mol % of B2O3.
The deformation point of the second glass member is within a range of 425° C. to 455° C. In addition, the softening point of the second glass member is within a range of 500° C. to 530° C.
In addition, the softening point means a temperature when the glass noticeably starts softening under its own weight. In order words, the softening point is a temperature when glass viscosity becomes about 107.6 dPa·s.
The deformation point is found by a thermo-mechanical analysis. The thermo-mechanical analysis means a method for measuring deformation of a substance as a function of a temperature or a time by applying a non-oscillatory load such as compression, tension, or bending to the substance while changing a temperature of the sample based on a certain program. As a device for thermo-mechanical analysis, TMA-60 (produced by Shimadzu Corporation) may be used.
The deformation point means the temperature when expansion apparently stops, in a thermal expansion curve showing a change in temperature and volume of the glass in the thermo-mechanical analysis. That is, the thermal expansion coefficient of the glass abruptly decreases when the glass itself receives a jig intrusion, by a measurement mechanism of the thermo-mechanical analysis. In other words, the deformation point is the temperature when the glass viscosity becomes 1010 to 1011 dPa·s.
Bonding layer 17 is formed on barrier rib 14 by screen printing. According to this embodiment, a bonding layer paste is provided by mixing the second glass member and a binder component, and used as one example.
First, the second glass member composed of the illustrated composition is ground by wet jet milling or ball milling so that its average grain diameter becomes 0.5 μm to 3.0 μm, whereby second glass member powder is produced. Then, 50 wt. % to 65 wt. % of the second glass member powder and 35 wt. % to 50 wt. % of the binder component are kneaded well with three rolls, whereby the bonding layer paste to be printed is completed.
The binder component is ethyl cellulose, terpineol containing 1 wt. % to 20 wt. % of an acrylic resin, or butyl carbitol acetate. In addition, in the paste, if needed, dioctyl phthalate, dibutyl phthalate, triphenyl phosphate, or tributyl phosphate may be added as a plasticizer. In addition, glycerol monooleate, sorbitan sesquioleate, homogenol (produced by Kao Corporation), or alkyl aryl group ester phosphate may be added as a dispersant. When the dispersant is added, printing characteristics are improved.
As one example, a method for screen printing is performed with the above bonding layer paste. First, rear glass substrate 11 on which barrier rib 14 is formed is set in a screen printing machine. A predetermined opening is formed in a screen. That is, the opening is formed so as to correspond to a barrier rib pattern so that the bonding layer paste is printed on barrier rib 14. Then, a predetermined amount of bonding layer paste is dropped on the screen. Then, the bonding layer paste is spread all over the screen. Finally, the screen is pressed against rear glass substrate 11 by a squeegee. Through the above steps, the bonding layer paste is printed on barrier rib 14. Then, the binder component is partially removed from the bonding layer paste in a furnace.
In addition, a photosensitive paste provided by kneading the second glass member and a photosensitive resin may be used. More specifically, the photosensitive paste is applied onto barrier rib 14 and then, exposed and developed, whereby bonding layer 17 is formed.
In addition, while the screen printing is used in the above embodiment, sand-blasting may be used. In addition, depending on the composition of bonding layer 17, photolithography may be used.
PDP 1 according to this embodiment, includes front plate 2, rear plate 10 arranged so as to be opposed to front plate 2, and the bonding layer to bond the front plate and the rear plate. Front plate 2 has dielectric layer 8 and protective layer 9 to cover dielectric layer 8. Rear plate 10 has base dielectric layer 13, barrier ribs 14 formed on base dielectric layer 13, and phosphor layer 15 formed on base dielectric layer 13 and on the side surface of barrier rib 14. Protective layer 9 includes base film 91 serving as the base layer formed on dielectric layer 8. Aggregated particles 92 composed of aggregated crystal particles 92a of the magnesium oxide are dispersed all over base film 91. Base film 91 includes at least the first metal oxide and the second metal oxide. In addition, base film 91 has at least one peak through the X-ray diffraction analysis. This peak exists between the first peak of the first metal oxide through the X-ray diffraction analysis and the second peak of the second metal oxide through the X-ray diffraction analysis. The first peak and the second peak show the same surface orientation as the surface orientation shown by the peak of base film 91. The first metal oxide and the second metal oxide are composed of two kinds of metal oxides selected from the group of MgO, CaO, SrO, and BaO. Rear plate 10 has barrier rib 14. Bonding layer 17 bonds at least one part of barrier rib 14 to protective layer 9.
As described above, PDP 1 according to this embodiment is composed of base film 91 providing both effects of low voltage drive and charge retention, and aggregated particle 92 of MgO providing the effect of discharge delay prevention. Thus, as whole PDP 1, the high-definition PDP can be driven at high speed and low voltage, and the high-grade image display performance is provided by preventing the lighting defect. In addition, according to PDP 1 in this embodiment, bonding layer 17 bonds at least one part of barrier rib 14 to protective layer 9. Thus, the mechanical strength can be prevented from being lowered in PDP 1.
Thus, the description has been made of PDP 1 according to this embodiment. However, the present invention is not limited to this embodiment.
According to this configuration, air gap 18 serves as an exhaust path at the time of ventilation, so that discharge space 16 can be easily exhausted. Therefore, while mechanical strength is prevented from being lowered, PDP 1 can be easily produced. In addition, since the ventilation is easily performed, a CO series impurity or CH series impurity in discharge space 16 is prevented from being attached on base film 91. Therefore, base film 91 according to this embodiment can prevent the secondary electron emission ability from being reduced due to a long period of use. Therefore, according to PDP 1 in this embodiment, base film 91 is prevented from deteriorating, and the sustain voltage can be reduced.
A film thickness of bus electrodes 4b and 5b shown in
In addition, bonding layer 17 may not only bond first barrier rib 14 to front plate 2, but also bond second barrier rib 14b to front plate 2.
As described above, the technique disclosed in this embodiment is useful for realizing the PDP which is provided with high-definition and high-brightness display performance, and keeps its power consumption low.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2010-057077 | Mar 2010 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2011/001323 | 3/7/2011 | WO | 00 | 11/9/2011 |
