The present application relates to a plasma emitting device for emitting a plasmarized gas.
For example, as described in the following patent literature, a plasma emitting device includes a plasma head for jetting a plasmarized gas, which is gas that has been converted into plasma, so as to emit the plasmarized gas onto a surface of a workpiece. A reaction gas that constitutes a source of a plasmarized gas, and a carrier gas for carrying the reaction gas are supplied from a gas supply device to the plasma head through a gas tube. The plasma head includes a pair of electrodes, and voltage is applied between the electrodes so that the reaction gas passing between the electrodes is converted into plasma. The plasmarized gas and the carrier gas are jetted from a nozzle of the plasma head.
Patent Literature 1: JP-A-2012-129356
The plasma emitting device described above has been underdevelopment, and hence, by making some improvement thereto, the practicality of the plasma emitting device can be improved. The present disclosure has been made in view of these situations, and an object of the present disclosure is to provide a highly practical plasma emitting device.
For solving the above mentioned problems, according to the present disclosure, there is provided a plasma emitting device including: a plasma head configured to generate a plasmarized gas and jet the plasmarized gas from a nozzle; a gas supply device configured to supply a gas to the plasma head while adjusting a flow rate of the gas; a gas tube configured to connect the gas supply device and the plasma head to constitute a flow path for the gas; and a pressure detector configured to detect a pressure of a gas supplied from the gas supply device.
According to the present disclosure, the pressure of the gas supplied to the plasma head can be detected, and the pressure so detected can be used for various purposes. Therefore, according to the present disclosure, the practical plasma emitting device can be provided. Specifically, for example, a head clogging, which is a clog impeding a gas flow in the plasma head, can be determined without difficulty based on the detected pressure.
Hereinafter, referring to the drawings, a representative mode for carrying out a plasma emitting device of the present disclosure will be described in detail as an embodiment thereof. The present disclosure can be carried out in various forms which are modified and/or improved variously based on the knowledge of those skilled in the art to which the present disclosure pertains.
[A] Overall Configuration of Plasma Emitting Device
A plasma treatment machine, which constitutes an embodiment of a plasma emitting device of the present disclosure, includes, as shown in
Referring to
There are formed in the interior of housing 20 reaction gas flow path 26 configured to allow a reaction gas to flow into reaction chamber 22 from above and pair of carrier gas flow paths 28 configured to allow a carrier gas to flow therethrough. Although a reaction gas (a seed gas) is oxygen (O2), a mixture gas of oxygen and nitrogen (N2) (for example, dry air (Air) is caused to flow from reaction gas flow path 26 into a space defined between electrodes 24 (hereinafter, this mixture gas may also be referred to as a “reaction gas” as a matter of convenience, and oxygen may be referred to as a “seed gas”). A carrier gas is nitrogen and is caused to flow from individual carrier gas flow paths 28 in such a manner as to encompass individual electrodes 24. A lower portion of emitting head 14 constitutes nozzle 30, and multiple discharge ports 32 are formed in nozzle 30 in such a manner as to be aligned into a row. Then, multiple discharge paths 34 are formed in such a manner as to extend downwards from reaction chamber 22 so as to connect to corresponding discharge ports 32.
AC voltage is applied to the space defined between pair of electrodes 24 by a power supply section of power and gas supply unit 16. By applying the AC voltage in that way, for example, as shown in
Sleeve 36 is provided around nozzle 30 in such a manner as to surround nozzle 30. A heat gas (in the plasma treatment machine, air is adopted) as a shield gas is supplied into annular space 38 defined between sleeve 36 and nozzle 30 by way of supply pipe 40, and the heat gas is discharged along a flow of the plasmarized gas jetted from nozzle 30 in such a manner as to encompass the plasmarized gas. As the name implies, the heat gas is heated gas discharged to ensure the efficacy of the plasmarized gas. To make this happen, heater 42 for heating a gas is provided halfway along the length of supply pipe 40.
In the plasma treatment machine, in place of emitting head 14 described above, another plasma head can be attached to the robot.
Power and gas supply unit 16 includes a power supply section and a gas supply section. The power supply section has a power supply for applying a voltage to the space defined between pair of electrodes 24 of emitting head 14, and the gas supply section configured to function as a gas supply device supplies the reaction gas, the carrier gas, and the shield gas. The supply of the gases by the gas supply section will be described in detail as below.
[B] Supply of Gases
As shown in
Gas supply section 50 has mass flow controllers 56, each functioning as a flow rate controller, which are provided individually for air (Air) containing oxygen as a seed gas of a reaction gas, nitrogen gas (N2) as a reaction gas, nitrogen gas (N2) which is divided into carrier gas used for two systems, namely pair of carrier gas flow paths 28 of emitting head 14, and air (Air) as a heat gas. As an explanatory convenience, when these five mass flow controllers 56 need to be distinguished from one another for a specific description, mass flow controllers 56 will be referred to as mass flow controllers 56a1, 56a2, 56b to 56d. Air whose flow rate is controlled by mass flow controller 56a1 and nitrogen gas whose flow rate is controlled by mass flow controller 56a2 are mixed together by mixer 58 to thereby generate a reaction gas (N2+O2).
A reaction gas, two systems of carrier gas, and a heat gas are supplied to emitting head 14 by way of four gas tubes 60 (also, refer to
[C] Determination on Clogging in Emitting Head and Gas Tubes
Clogging in a gas flow makes it difficult to carry out a plasma treatment with a good condition by emitting a plasmarized gas. Clogging can occur, for example, in nozzles 30, 30′ of emitting heads 14, 14′, annular spaces 38, 38′ for heat gas, and tubes 60 when tubes 60 are collapsed. In the plasma treatment machine of the present disclosure, controller 18 is configured to determine occurrence of such clogging.
PA=ΔPTA+ΔPHM,
PB=ΔPTB+ΔPHM,
PC=ΔPTC+ΔPHM, and
PD=ΔPTD+ΔPHH.
When gas flow rates (mass flow rates per unit time) which are controlled by mass flow controllers 56a1, 56a2, 56b to 56d are referred to as FA1, FA2, FB to FD, respectively, the relevant gases flow in corresponding tubes 60a to 60d at flow rates of A(=FA1+FA2) to FD. Assuming that tube pressure losses ΔPTA to ΔPTD in individual tubes 60 in the cases of the relevant gases flowing properly through corresponding tubes 60 are referred to as reference tube pressure losses ΔPTA0 to ΔPTD0, then, these reference tube pressure losses ΔPTA0 to ΔPTD0 are determined respectively as below, based on flow rates FA to FD, of which gases flowing through corresponding tubes 60, and tube length L of tubes 60 (respective lengths of tubes 60 can be considered to be equal to one another in the plasma treatment machine of the present disclosure):
ΔPTA0=fTA(FA,L)=fTA(FA1+FA2,L),
ΔPTB0=fTB(FB,L),
ΔPTC0=fTC(FC,L), and
ΔPTD0=fTD(FD,L),
where, fTA( ) to fTD( ) express respective functions using flow rates FA to FD and tube length L as parameters.
On the other hand, assuming that main gas system head pressure loss ΔPHM and heat gas system head pressure loss ΔPHH in the cases of the gases flowing properly within emitting head 14 are referred to as reference main gas system head pressure loss ΔPHM0 and heat gas system head pressure loss ΔPHH0, respectively, these reference main gas system head pressure loss ΔPHM0 and reference heat gas system head pressure loss ΔPHH0 are determined based on flow rates of the gases flowing through the main gas system and the heat gas system, that is, main gas system flow rate FM (=FA+FB+FC) and heat gas system flow rate FH (=FD), as well as type Ty of emitting head 14 as below:
ΔPHM0=fHM(FM,Ty)=fHM(FA+FB+FC,Ty)=fHM(FA1+FA2+FB+FC,Ty), and
ΔPHH0=fHH(FHH,Ty)=fHH(FD,Ty);
where, fHM( ) and fHH( ) are functions using flow rates FM, FHH, and head type Ty as parameters.
Controller 18 stores the data for obtaining reference tube pressure losses ΔPTA0 to ΔPTD0, reference main gas system head pressure loss ΔPHM0, and reference heat gas system head pressure loss ΔPHH0 in the form of functions fTA( ) to fHM( ) and fHH( ) described above, or in the form of matrix data for each of flow rates FA to FD whose values are discretely set, tube length L, flow rates FM, FHH, and head type Ty, obtains reference tube pressure losses ΔPTA0 to ΔPTD0, reference main gas system head pressure loss ΔPHM0, and reference heat gas system head pressure loss ΔPHH0 when a plasma treatment is actually being performed or before the plasma treatment is actually performed based on the data so stored, flow rates FA1, FA2, FB to FD of the gases which are actually controlled by mass flow controllers 56a1, 56a2, 56b to 56d, respectively, tube length L of each of tubes 60 attached, and type Ty of emitting head 14,14′ attached, and obtains reference pressures PA0 to PD0, which constitute reference gas pressures, based on the results of the calculations as below:
PA0=ΔPTA0+ΔPHM0,
PB0=ΔPTB0+ΔPHM0,
PC0=ΔPTC0+ΔPHM0,and
PD0=ΔPTD0+ΔPHH0
Then, controller 18 compares actual pressures PA to PD, which are detected by pressure sensors 62a to 62d, respectively, with reference pressures PA0 to PD0 and determines on dogging in nozzles 30, 30′ of emitting heads 14, 14′ and clogging in annular spaces 38, 38′ for the heat gas. Specifically speaking, when actual pressures PA to PC become higher than margin pressures dPA to dPC (set differences) which are set individually for those actual pressures PA to PC, controller 18 determines that dogging is generated in nozzle 30, 30′, and controller 18 determines that dogging is generated in annular spaces 38, 38′ when actual pressure PD becomes higher than corresponding set margin pressure dPD. That is, controller 18 functions as a determination device for determining the head dogging indicating that a clog is impeding the gas flow in the plasma head.
On the other hand, when only any one of actual pressures PA to PC becomes higher than margin pressures dPA to dPC which are set individually for actual pressures PA to PC, controller 18 determines that dogging is generated in one of tubes 60a to 60c through which the gas flows whose actual pressure PA to PC is so higher. In the determination based on actual pressure PD, that is, in the determination that actual pressure PD is higher than margin pressure dPD set therefor, controller 18 may determine that dogging is generated in any location in tube 60d and the heat gas systems of emitting head 14 or 14′.
14,14′: emitting head [Plasma Head]; 16: power and gas supply unit; 18: Controller [Control Device] [Clogging Determination Device]; 22: Reaction Chamber; 24: Electrode; 30, 30′: Nozzle; 38, 38′: Annular Space; 50: Gas Supply Section [Gas Supply Device]; 56, 56a to 56d: Mass Flow Controller [Flow Rate Controller]; 60, 60a to 60d: Gas Tube; 62, 62a to 62d: Pressure Sensor [Pressure Detector]
Filing Document | Filing Date | Country | Kind |
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PCT/JP2017/045811 | 12/20/2017 | WO |
Publishing Document | Publishing Date | Country | Kind |
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WO2019/123584 | 6/27/2019 | WO | A |
Number | Name | Date | Kind |
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20060057301 | Konig | Mar 2006 | A1 |
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20120152914 | Matsuura | Jun 2012 | A1 |
20140091066 | Enyedy et al. | Apr 2014 | A1 |
20170001255 | Winn | Jan 2017 | A1 |
Number | Date | Country |
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4-114561 | Oct 1992 | JP |
2000-343220 | Dec 2000 | JP |
2012-129356 | Jul 2012 | JP |
WO-2012153332 | Jul 2013 | WO |
Entry |
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International Search Report dated Feb. 27, 2018 in PCT/JP2017/045811 filed Dec. 20, 2017, 1 page. |
Number | Date | Country | |
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20200396821 A1 | Dec 2020 | US |