The present invention relates to a plasma generating electrode and a plasma reactor. More particularly, the present invention relates to a plasma generating electrode and a plasma reactor capable of achieving simple and reliable electrical connection.
A silent discharge occurs when disposing a dielectric between two electrodes secured on each end and applying a high alternating current voltage or a periodic pulse voltage between the electrodes. In the resulting plasma field, active species, radicals, and ions are produced to promote reaction and decomposition of gases. This phenomenon may be utilized to remove toxic components contained in an engine exhaust gas or an incinerator exhaust gas.
For example, a plasma reactor has been disclosed such as an air cleaner utilizing ozone or a plasma reactor which processes toxic components (e.g. NOx, particulate matter (PM) such as carbon particulates, HC, and CO) contained in an exhaust gas discharged from an engine, an incinerator, or the like by causing the exhaust gas to pass through the plasma field (see patent document 1, for example).
As an example of such a plasma reactor, a plasma reactor can be given which includes a plasma generating electrode in which a number of sheet-shaped unit electrodes including a ceramic dielectric and a conductive film disposed in the ceramic dielectric are hierarchically stacked at specific intervals. In such a plasma generating electrode, a conductive terminal for electrically connecting each unit electrode is disposed on the end face of the sheet-shaped unit electrode.
According to the above plasma generating electrode, since the conductive terminal is disposed on the end face of the unit electrode, the area of the connection portion of the conductive terminal is reduced to a large extent, whereby connection of the conductive terminal becomes difficult, or the bond strength of the conductive terminal is decreased. It is also difficult to electrically connect such a conductive terminal with an external power supply or the like.
The present invention has been achieved in view of the above-described problems, and has an object of providing a plasma generating electrode and a plasma reactor capable of achieving simple and reliable electrical connection.
In order to achieve the above object, the present invention provides the following plasma generating electrode and plasma reactor.
[1] A plasma generating electrode comprising: two or more opposing sheet-shaped unit electrodes and conductive terminals as connection portions for applying a voltage between the unit electrodes, and capable of generating plasma upon application of a voltage between the unit electrodes through the conductive terminals, at least one of the opposing unit electrodes including a sheet-shaped ceramic dielectric and a conductive film disposed in the ceramic dielectric and partially extending on a surface of the ceramic dielectric opposite to the other unit electrode on an end of the ceramic dielectric, and the conductive terminal being electrically connected with the conductive film extending on the surface of the ceramic dielectric opposite to the other unit electrode on the end of the ceramic dielectric (hereinafter may be called “first invention”).
[2] A plasma generating electrode comprising: two or more opposing sheet-shaped unit electrodes and conductive terminals as connection portions for applying a voltage between the unit electrodes, and capable of generating plasma upon application of a voltage between the unit electrodes through the conductive terminals, at least one of the opposing unit electrodes including a sheet-shaped ceramic dielectric and a conductive film disposed in the ceramic dielectric and partially extending outside the ceramic dielectric in the same direction as a direction in which the conductive film is disposed in the ceramic dielectric, and the conductive terminal being electrically connected with the conductive film extending outside the ceramic dielectric (hereinafter may be called “second invention”).
[3] The plasma generating electrode according to [1] or [2], wherein the conductive terminal is bonded to the conductive film by welding, brazing, or diffusion bonding.
[4] The plasma generating electrode according to [1] or [2], wherein the conductive terminal is formed by applying a conductive material to a surface of the conductive film.
[5] The plasma generating electrode according to any one of [1] to [4], wherein the conductive terminal includes at least one metal selected from the group consisting of iron, nickel, chromium, cobalt, titanium, aluminum, gold, silver, and copper.
[6] The plasma generating electrode according to any one of [1] to [5], wherein the conductive film includes at least one metal selected from the group consisting of tungsten, molybdenum, manganese, chromium, titanium, zirconium, nickel, iron, silver, copper, platinum, and palladium.
[7] The plasma generating electrode according to any one of [1] to [6], comprising a collector member which electrically connects the unit electrodes of the same polarity.
[8] A plasma reactor comprising the plasma generating electrode according to any one of [1] to [7], and a casing having a passage (gas passage) for a gas containing a specific component formed therein, wherein, when the gas is introduced into the gas passage of the casing, the specific component contained in the gas can be reacted by plasma generated by the plasma generating electrode (hereinafter may be called “third invention”).
[9] The plasma reactor according to [8], further comprising a pulse power supply for applying a voltage to the plasma generating electrode.
[10] The plasma reactor according to [9], wherein the pulse power supply includes at least one SI thyristor.
The plasma generating electrode according to the present invention allows simple and reliable electrical connection of each unit electrode. Since the plasma reactor according to the present invention includes the above plasma generating electrode, the plasma reactor may be suitably used as an air cleaner and an exhaust gas processing device.
1: plasma generating electrode, 2: unit electrode, 3: ceramic dielectric, 4: conductive film, 5: conductive terminal, 6: holding member, 7: through-hole, 11: plasma generating electrode, 12: unit electrode, 13: ceramic dielectric, 14: conductive film, 15: conductive terminal, 16: opening, 17: collector member, 21: plasma reactor, 22: casing, 23: gas passage, b: plasma generation region
Embodiments of the plasma generating electrode and the plasma reactor according to the present invention (first to third inventions) are described below in detail with reference to the drawings. Note that the present invention is not limited to the following embodiments. Various alterations, modifications, and improvements may be made without departing from the scope of the present invention based on knowledge of a person skilled in the art.
One embodiment of the plasma generating electrode according to the first invention is described below in detail.
In an ordinary plasma generating electrode, a conductive terminal for electrically connecting a unit electrode is disposed on an end face of a sheet-shaped unit electrode. Therefore, since the area of the connection portion of the conductive terminal is small, connection of the conductive terminal may be difficult, or the bond strength of the conductive terminal may be decreased. In the plasma generating electrode 1 according to this embodiment, since the conductive terminal 5 is electrically connected with the portion of the conductive film 4 extending on the surface of the ceramic dielectric 3 opposite to the other unit electrode 2 on the end of the ceramic dielectric 3, as described above, the area of the connection portion of the conductive terminal 5 can be increased in comparison with an ordinary plasma generating electrode, whereby simple and reliable electrical connection is achieved.
The conductive film 4 shown in FIGS. 1 to 3 is disposed in the ceramic dielectric 3 and partially extends on the surface of the ceramic dielectric 3 opposite to the other unit electrode 2 on the end of the ceramic dielectric 3 through the end face of the ceramic dielectric 3. Note that the path through which the conductive film 4 extends from the inside of the ceramic dielectric 3 to the surface opposite to the other unit electrode 2 is not limited thereto. As shown in FIGS. 4 to 6, the conductive film 4 may be disposed in the ceramic dielectric 3 and partially extend on the surface of the ceramic dielectric 3 opposite to the other unit electrode 2 on the end of the ceramic dielectric 3 through the ceramic dielectric 3. In the plasma generating electrode 1 shown in
As shown in FIGS. 1 to 3, at least one of the opposing unit electrodes 2 is a barrier discharge electrode including the ceramic dielectric 3 as a dielectric and the conductive film 4. When at least one unit electrode 2 includes the ceramic dielectric 3, a nonuniform discharge such as a spark can be reduced, and small discharges can be caused to occur between the unit electrodes 2 at a number of locations in comparison with the case of causing a discharge using electrodes formed only of a conductive material. Since such small discharges involve a small amount of current in comparison with a spark discharge and the like, power consumption can be reduced. Moreover, the discharge stops before the movement of ions occurs due to the presence of the dielectric so that the movement of electrons becomes dominant between the unit electrodes 2, whereby nonthermal plasma which does not cause an increase in temperature can be generated. Therefore, the plasma generating electrode 1 according to this embodiment may be used for a plasma reactor which causes reaction of a gas containing a specific component, such as an exhaust gas processing device which processes an exhaust gas discharged from an automotive engine, a combustion furnace, and the like, or an ozonizer which produces ozone by reacting oxygen in the air or the like.
In the plasma generating electrode 1 shown in
In the plasma generating electrode 1 shown in
The conductive terminal 5 used for the plasma generating electrode 1 according to this embodiment is a terminal to which a wire (not shown) or a collector member (not shown) for supplying power from a specific power supply (not shown) to the conductive film 4 is connected. The shape of the conductive terminal 5 is not particularly limited. It is preferable that the conductive terminal 5 be disposed to cover almost the entire area of the conductive film 4 extending on the surface of the ceramic dielectric 3. This configuration allows the conductive film 4 extending on the surface of the ceramic dielectric 3 to be protected by the conductive terminal 5. For example, a sheet-shaped member exhibiting conductivity may be suitably used as the conductive terminal 5.
In the plasma generating electrode 1 according to this embodiment, the area of the conductive terminal 5 can be increased by disposing the conductive terminal 5 on the surface of the unit electrode 2, whereby a collector member can be easily connected by welding or the like when using stainless steel foil as the collector member, for example. Moreover, electrical connection can be achieved using a method of holding the conductive terminal 5 with a clip or the like, for example. It is also possible to achieve electrical connection by caulking the conductive terminal 5 formed of a metal. When achieving electrical connection by caulking the conductive terminal 5, it is preferable to dispose the conductive terminals 5 on both sides of the unit electrode 2 so that load is not applied to the ceramic dielectric 3 forming the unit electrode 2 to a large extent.
The method of bonding the conductive terminal 5 to the conductive film 4 is not particularly limited. For example, the conductive terminal 5 is preferably bonded to the conductive film 4 by welding, brazing, or diffusion bonding. This configuration increases the bond strength, whereby an electrical connection exhibiting excellent impact resistance can be achieved. As a specific method for welding, brazing, or diffusion bonding, a method generally used for metal bonding may be used. For example, a gold solder, a silver solder, a copper solder, a nickel solder, an aluminum solder, or the like may be appropriately selected depending on the combination of the material for the conductive film and the metal material for the conductive terminal.
The material for the conductive terminal 5 is not particularly limited insofar as the material includes a conductive metal. It is preferable that the material for the conductive terminal 5 include at least one metal selected from the group consisting of iron, nickel, chromium, cobalt, titanium, aluminum, gold, silver, and copper. When using a sheet-shaped member as the conductive terminal 5, metal alloys such as an iron-nickel-cobalt alloy, an iron-nickel-chromium alloy, an iron-aluminum-chromium alloy, a titanium-aluminum alloy, a nickel-chromium alloy, a gold alloy, a silver alloy, and a copper alloy can be given as preferred examples of the material for the conductive terminal 5. When using a sheet-shaped member as the conductive terminal 5, it is preferable that the sheet-shaped member have a thickness of 1 mm or less, although the thickness varies depending on the thickness of the unit electrode 2.
The conductive terminal 5 used for the plasma generating electrode 1 according to this embodiment may be formed by applying a conductive material to the surface of the conductive film 4 extending on the surface of the ceramic dielectric 3 instead of using a sheet-shaped member formed in advance. Such a conductive terminal 5 may be formed of a conductive plating layer provided on the conductive film 4 extending on the surface of the ceramic dielectric 3 opposite to the other unit electrode 2 on the end of the ceramic dielectric 3, for example. The conductive plating layer may be formed by plating the surface of the conductive film 4 with a conductive material including a conductive metal using a method such as electroplating or electroless plating. When using the conductive plating layer as the conductive terminal 5, a step of bonding a metal conductive terminal such as a brazing step becomes unnecessary. Moreover, since the thickness of the terminal can be reduced, reliability in terms of thermal stress is improved.
The material for the conductive plating layer is not particularly limited insofar as the material includes a conductive metal. It is preferable that the material for the conductive plating layer include at least one metal selected from the group consisting of iron, nickel, chromium, cobalt, titanium, aluminum, gold, silver, and copper. The method of forming the conductive plating layer is not particularly limited. Electroplating or electroless plating may be suitably used. When forming the conductive terminal 5 by electroplating or electroless plating, since the thickness of the resulting conductive terminal 5 is relatively reduced, it is preferable to increase the thickness of the conductive film 4 extending on the surface of the ceramic dielectric 3, although this measure need not necessarily be employed.
The conductive terminal 5 may be formed by applying an acid-resistant conductive material (metal paste) having a composition which provides a coefficient of thermal expansion close to that of the conductive film 4 or by molten metal plating (method of plating a material by immersing the material in a molten metal) instead of forming the conductive terminal 5 using a coating method such as electroplating or electroless plating. The thickness of the conductive terminal 5 can be reduced by forming the conductive terminal 5 using the above coating method in comparison with the case of forming the conductive terminal 5 using a coating method such as electroplating or electroless plating. The conductive material (metal paste) may be applied using a method similar to a method of forming the conductive film 4 by printing. The conductive terminal 5 may be formed by forming a plating layer using a method such as molten metal plating and subjecting the plating layer to electroless plating such as electroless nickel plating.
The conductive material for forming the conductive terminal 5 is not particularly limited. The conductive material for the conductive terminal 5 may be the same as or differ from the material for forming the conductive film 4. For example, when using a material differing from that of the conductive film 4 as the conductive material for forming the conductive terminal 5, the resulting conductive terminal 5 exhibits excellent heat resistance and bondability (e.g. solder wettability) to the collector member for electrically connecting the conductive terminal 5, and laser welding or ultrasonic welding of the collector member and the conductive terminal 5 is facilitated.
For example, when using a noble metal such as platinum as the material for forming the conductive film 4, the same material as the conductive film 4 may be used as the conductive material for forming the conductive terminal 5. When using the same material as the conductive film 4 as the conductive material for the conductive terminal 5, the conductive film 4 extending on the surface of the ceramic dielectric 3 and the conductive terminal 5 can be integrated. When using the plasma generating electrode 1 at room temperature or a relatively low temperature, the conductive film 4 and the conductive terminal 5 may be integrally formed using a single material such as nickel.
When forming the conductive terminal 5 by applying the conductive material (metal paste), it is preferable to integrate the conductive film 4 extending on the surface of the ceramic dielectric 3 and the resulting conductive terminal 5 by firing. This provides a conductive terminal 5 with excellent density and adhesion. When forming the conductive terminal 5 by electroplating or electroless plating, the adhesion of the conductive terminal 5 to the conductive film 4 extending on the surface of the ceramic dielectric 3 is improved by heat treatment or the like. The thickness of the conductive terminal 5 is not particularly limited. For example, when using the conductive terminal 5 formed by coating, it is preferable that the metal plating layer have a thickness of 0.001 to 0.1 mm.
The ceramic dielectric 3 used for the plasma generating electrode 1 according to this embodiment is not particularly limited insofar as the ceramic dielectric 3 can be suitably used as a dielectric. It is preferable that the ceramic dielectric 3 include at least one compound selected from the group consisting of aluminum oxide, magnesium oxide, silicon oxide, silicon nitride, aluminum nitride, mullite, spinel, cordierite, magnesium-calcium-titanium oxide, barium-titanium-zinc oxide, and barium-titanium oxide, for example. If the ceramic dielectric 3 includes the above compound, a ceramic dielectric 3 exhibiting excellent heat resistance can be obtained.
The ceramic dielectric 3 used for the plasma generating electrode 1 according to this embodiment may be formed using a tape-shaped unfired ceramic formed body such as a ceramic green sheet formed in the shape of a tape by a doctor blade method, for example. The ceramic dielectric 3 may also be formed using a sheet obtained by extrusion. A flat sheet formed by powder dry pressing may also be used.
The conductive film 4 is not particularly limited insofar as plasma can be generated by applying a voltage between the unit electrodes 2. It is preferable that the conductive film 4 include at least one metal selected from the group consisting of tungsten, molybdenum, manganese, chromium, titanium, zirconium, nickel, iron, silver, copper, platinum, and palladium.
The method of disposing the conductive film 4 in the ceramic dielectric 3 is not particularly limited. For example, the conductive film 4 may be disposed in the ceramic dielectric 3 by applying a conductive film paste, prepared by mixing a powder of a metal mentioned above as the preferable material for the conductive film 4, an organic binder, and a solvent such as terpineol, to a ceramic green sheet used as the ceramic dielectric 3. As preferred examples of the specific coating method, screen printing, calender rolling, spraying, electrostatic painting, dip coating, knife coating, inkjetting, chemical vapor deposition, physical vapor deposition, and the like can be given. According to the above method, the material can be easily applied in a specific shape, whereby a conductive film 4 can be formed which exhibits excellent surface smoothness (flatness) and has a small thickness.
When forming the unit electrode 2 including the sheet-shaped ceramic dielectric 3 and the conductive film 4 disposed in the ceramic dielectric 3 and partially extending on the surface of the ceramic dielectric 3 opposite to another unit electrode 2 on the end of the ceramic dielectric 3, the conductive film paste is applied to one surface (coating surface) of the ceramic green sheet, as described above. In this case, it is preferable to apply the conductive film paste so that the conductive film paste is partially positioned outside the coating surface of the ceramic green sheet.
Another ceramic green sheet (ceramic green sheet to which the conductive film paste is not applied) is stacked on the ceramic green sheet to which the conductive film paste is applied so that the conductive film paste is covered. This allows the conductive film paste to be disposed between (inside) the ceramic green sheets.
The conductive film paste is applied to the surface of the ceramic green sheet (surface opposite to another unit electrode 2 in the plasma generating electrode 1 shown in
The unit electrode 2 of the plasma generating electrode 1 shown in FIGS. 4 to 6 may be formed by stacking a ceramic green sheet in which through-holes are formed at least on one end on the ceramic green sheet to which the conductive film paste is applied so that the conductive film paste is covered, and filling the through-holes with the conductive film paste and applying the conductive film paste to the surface of the ceramic green sheet including the openings of the through-holes after stacking the ceramic green sheets.
The plasma generating electrode 1 according to this embodiment includes a holding member 6 for advantageously holding the unit electrodes 2 in a state in which the unit electrodes 2 are separated at a specific interval. The holding member 6 is a member disposed between the unit electrodes 2 to form a plasma generation space. It is preferable that the holding member 6 include at least one compound selected from the group consisting of aluminum oxide, magnesium oxide, silicon oxide, silicon nitride, aluminum nitride, mullite, spinel, and cordierite. It is preferable that the holding member 6 exhibit electric insulating properties from the viewpoint of preventing a local creeping discharge.
In the plasma generating electrode 1 shown in
The thicknesses of the ceramic dielectric 3 and the conductive film 4 in the plasma generating electrode 1 according to this embodiment may be appropriately selected taking into consideration the amount and intensity of plasma to be generated, the voltage applied between the unit electrodes 2, and the like.
One embodiment of the plasma generating electrode according to the second invention is described below in detail.
In the plasma generating electrode 11 according to this embodiment, the thickness of the portion in which the conductive terminal 15 is disposed can be reduced in comparison with the thickness of the ceramic dielectric 13, as shown in FIGS. 7 to 9. Therefore, even if a collector member 17 (collector terminal) formed of stainless steel foil or the like is welded to the conductive terminal 15, the unit electrode 12 does not interfere with the holding member 6 when stacking the unit electrodes 12.
According to the above configuration, since the area of the connection portion of the conductive terminal can be increased in comparison with an ordinary plasma generating electrode, effects similar to those of the embodiment (plasma generating electrode 1) according to the first invention shown in the
In the plasma generating electrode 11 according to this embodiment, it suffices that at least one of the opposing unit electrodes 12 include the ceramic dielectric 13 and the conductive film 14 partially extending outside the ceramic dielectric 13 in the same direction as the direction in which the conductive film 14 is disposed in the ceramic dielectric 13. For example, both of the opposing unit electrodes 12 may include the ceramic dielectric 13 and the conductive film 14, or only one of the opposing unit electrodes 12 may include the ceramic dielectric 13 and the conductive film 14. When only one of the opposing unit electrodes includes the ceramic dielectric and the conductive film (not shown), the other of the opposing unit electrodes may be a sheet-shaped electrode merely exhibiting conductivity. In this case, the configuration of the other of the opposing unit electrodes is not particularly limited. For example, an electrode such as a sheet-shaped electrode formed of a conductive metal may be suitably used.
In the unit electrode 12 shown in
In the plasma generating electrode 11 shown in
In the plasma generating electrode 11 according to this embodiment, the conductive film 14 may not extend to the edge of the ceramic dielectric 13, and may be exposed to the outside in the portion of the ceramic dielectric 13 inside the edge of the ceramic dielectric 13, as shown in FIGS. 13 to 15, for example. An opening 16 for disposing the conductive terminal 15 on the conductive film 14 is formed in the ceramic dielectric 13 in the portion inside the edge of the ceramic dielectric 13.
The unit electrode 12 shown in
When using a configuration in which the conductive film 14 is exposed to the outside in the portion of the ceramic dielectric 13 inside the edge of the ceramic dielectric 13, it is preferable to dispose the conductive films 14 to extend to the portions of the opposing unit electrodes 12 outside a plasma generation region B, and form the opening 16 for disposing the conductive terminal 15 in the ceramic dielectric 13.
As the ceramic dielectric 13 used for the plasma generating electrode 11 shown in
As the conductive film 14, a conductive film formed of the same material as the conductive film 4 (see
As the conductive terminal 15, a conductive terminal formed of the same material as the conductive terminal 5 (see
The plasma generating electrode 11 according to this embodiment includes the holding member 6 for advantageously holding the unit electrodes 12 in a state in which the unit electrodes 12 are separated at a specific interval in the same manner as in the embodiment of the first invention.
One embodiment of the plasma reactor according to the present invention (third invention) is described below in detail.
As shown in
The plasma reactor 21 according to this embodiment may include one embodiment (plasma generating electrode 11 (see
The material for the casing 22 forming the plasma reactor 21 shown in
The plasma reactor according to this embodiment may include a power supply (not shown) for applying a voltage to the plasma generating electrode. As the power supply, an ordinary power supply may be used insofar as the power supply can supply current which causes plasma to be effectively generated. It is preferable that the power supply be a pulse power supply. It is more preferable that the power supply include at least one SI thyristor. Plasma can be more efficiently generated using such a power supply.
The plasma reactor according to this embodiment may include a power supply component such as an outlet so that current can be supplied from an external power supply instead of providing the power supply in the plasma reactor.
The amount of current supplied to the plasma generating electrode forming the plasma reactor may be appropriately selected depending on the intensity of plasma to be generated. When installing the plasma reactor in an automotive exhaust system, it is preferable that current supplied to the plasma generating electrode be a direct current at a voltage of 1 kV or more, a pulse current having a peak voltage of 1 kV or more and a pulse rate per second of 100 or more (100 Hz or more), an alternating current having a peak voltage of 1 kV or more and a frequency of 100 or more (100 Hz or more), or a current generated by superimposing two of these currents. This configuration allows efficient generation of plasma.
The present invention is described below in detail by way of examples. Note that the present invention is not limited to the following examples.
A slurry for forming a ceramic green sheet was prepared using an aluminum oxide powder with a purity of 93 mass %. A ceramic green sheet in the shape of a tape having a rectangular surface shape (length: 100 mm, width: 50 mm) and having a thickness of 0.5 mm was formed using the resulting slurry. A pair of the resulting ceramic green sheets was used. A conductive paste using tungsten was printed on one side of one of the pair of ceramic green sheets to a length of 78 mm, a width of 48 mm, and a thickness of 0.01 mm to form a conductive film.
The conductive film was formed to extend to one end at a width of 10 mm in the same manner as in the plasma generating electrode 1 shown in
The pair of ceramic green sheets thus obtained was stacked and integrated so that the conductive film was covered to form an unfired unit electrode. A conductive paste using tungsten was printed on the surface of one end of the integrated unfired unit electrode to a width of 10 mm, a length of 10 mm, and a thickness of 0.01 mm to form a conductive film extending on the surface of the unfired unit electrode. In order to electrically connect the conductive film extending on the surface of the unfired unit electrode with the conductive film disposed in the ceramic dielectric, a conductive paste using tungsten was printed on the end face of the unfired unit electrode to a width of 10 mm.
The resulting unfired unit electrode was fired at 1450° C. to obtain a unit electrode. The surface of the conductive film extending on the surface and the side surface of the unit electrode formed using the conductive paste using tungsten was subjected to electroless nickel-boron (Ni—B) plating to a thickness of 0.005 mm. A kovar foil with a thickness of 0.2 mm was brazed onto the surface of the end of the unit electrode in the area with a length of 10 mm and a width of 10 mm using a copper solder to obtain a unit electrode having a conductive terminal on the surface on the end.
A collector member formed of stainless steel foil with a width of 5 mm and a length of 30 mm was connected to the conductive terminal of the resulting unit electrode by ultrasonic welding. A plasma generating electrode was produced by stacking twenty unit electrodes to which the collector member formed of stainless steel foil was connected. The load side and ground side collector members formed of stainless steel foil connected to the unit electrodes were respectively bundled and connected with a pulse power supply including an SI thyristor.
An electrical connection load test was conducted in which a specific voltage was applied to the resulting plasma generating electrode to generate plasma. It was confirmed that a uniform discharge was achieved in a gas stream at 600° C. A thermal vibration test was also conducted in which a specific vibration was applied to the heated plasma generating electrode. After conducting the thermal vibration test at 600° C. and 30 G for 100 hours, a voltage was applied to the plasma generating electrode to generate plasma. It was confirmed that a uniform discharge occurred between the unit electrodes. From the above test results, it was confirmed that the portion around the conductive terminal exhibited reliability under the thermal vibration conditions.
The plasma generating electrode according to the present invention allows simple and reliable electrical connection of each unit electrode. Since the plasma reactor according to the present invention includes such a plasma generating electrode, the plasma reactor may be suitably used as an air cleaner and an exhaust gas processing device.
Number | Date | Country | Kind |
---|---|---|---|
2004-377121 | Dec 2004 | JP | national |
Number | Date | Country | |
---|---|---|---|
Parent | PCT/JP05/23976 | Dec 2005 | US |
Child | 11812627 | Jun 2007 | US |