Patent Grant
7335850
The present invention relates to plasma jet electrode devices, and more particularly to a plasma jet electrode device, which can produce non-balance plasma spraying flow in a low temperature and atmospheric pressure to increase the plasma treatment area and improve the uniformity such that the surface treatment effect of work-pieces can be improved.
Recently, gas-state oxidized methods for removing contaminations, which use a gas dissociating (plasma) principle, are widely studied and developed, such as electron beam methods, corona discharge methods, microwave methods, radio frequency (RF) methods, dielectric barrier discharge (DBD) methods, etc. The above methods have been approved to have a certain treatment effect. Furthermore, the dielectric barrier discharge methods can effectively discharge under an atmospheric pressure, and have a low cost, so that the dielectric barrier discharge methods have been widely used in plastic film printed treatments, ore static filter segregators, ozone producers, surface modification, surface cleaning, radioactive waste, exhausting waste gas, etc. However, the non-thermal plasma thereof is in a high temperature state, and has disadvantages of arranging at a place and an uniformity of the treatment effect for treating surfaces of work-pieces.
What is needed, therefore, is a plasma jet electrode device having an excellent treatment effect.
A plasma jet electrode device in accordance with a preferred embodiment, includes a orientation base, a ceramic pipe arranged in the orientation base, a round plate having at least tilted through holes arranged thereon arranged in the ceramic pipe, a high-voltage metal electrode arranged in the round plate, a dielectric discharging plasma area formed between the high-voltage metal electrode and the ceramic pipe, a rotating base arranged around the orientation base, a bottom plate arranged under the rotating base, a grounding electrode arranged on the inner surface of the bottom plate, a low-temperature non-equilibrium plasma area formed between the grounding electrode and the high-voltage metal electrode, a spray head arranged under the bottom plate for spraying low-temperature non-equilibrium plasma. The spray head has a plurality of tilted through holes arranged thereon.
The plasma jet electrode device can use a wire connected to a power for supplying an alternating high-frequency high voltage on the high-voltage metal electrode, and make the bottom plate connected with ground. The low-temperature air and the plasma manufacturing gas enter from the windpipe, and pass through the plasma of the dielectric discharging plasma area from the tilted through holes arranged on the round plate to produce a turbulent flow and spray the plasma. Then the spraying plasma changes to a low-temperature non-equilibrium plasma in the low-temperature non-equilibrium plasma area. The low-temperature non-equilibrium plasma is sprayed through the rotating spray head and the tilted through holes to increase the treatment area and the uniformity of the plasma.
Other objects, advantages and novel features of the invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings, in which:
These and other features and advantages of the various embodiments disclosed herein will be better understood with respect to the following description and drawings, in which like numbers refer to like parts throughout, and in which:
Reference will now be made to the drawings to describe a preferred embodiment of the present plasma jet electrode device, in detail.
Referring to
The plasma manufacturing gases, which enter through windpipe 62 into the ceramic pipe 20, may be air, argon (Ar), carbon dioxide (CO2), nitrogen (N2), helium (He), oxygen (O2), or their combinations.
The plasma jet electrode device further includes a rotating base 50 arranged around the orientation base 10, a bottom plate 70 under the rotating base 50, and a grounding electrode 71 arranged on the inner surface of the bottom plate 70. A low-temperature non-equilibrium plasma area B is formed between the grounding electrode 71 and the high-voltage metal electrode 40. A spray head 72 for spraying the low-temperature non-equilibrium plasma, is arranged on the bottom plate 70. In this exemplary embodiment, the spray head 72 includes at least one titled through holes 73 arranged thereon, such as a plurality of titled through holes 73 distributed in a radial form as shown in
The round plate 30 is made of stainless steel, an inner screw is formed in the round plate 30, and an outer screw is formed at the periphery of the top of the high-voltage metal electrode 40. The outer screw is may arranged in the inner screw for assembling fixedly the high-voltage metal electrode 40 on the round plate 30.
The orientation base 10 has an inner circular groove 11 for inserting the ceramic pipe 20 into the orientation base 10 and fixing the ceramic pipe 20 at the circular groove 11.
The ceramic pipe 20 has an inner circular groove 21 for inserting the round plate 30 into the ceramic pipe 20 and fixing the round plate 30 at the inner circular groove 21.
The round plate 30 has a plurality of tilted through holes 31 distributed thereon as shown in
The high-voltage metal electrode 40 includes a metal connecter 41 and a tie-in 421 arranged on the top thereof. An inserting hole is arranged in the high-voltage metal electrode 40, and a laddering groove 401 is arranged in the inserting hole. Another inserting hole is arranged in the metal connecter 41, and another laddering groove 411 is arranged in the inserting hole. The metal connecter 41 is inserted into the laddering groove 401 of the high-voltage metal electrode 40, and the tie-in 421 is inserted into the laddering groove 411 of the metal connecter 41. The metal connecter 41 and the tie-in 421 are both made of electric metals. The wire 42 connects with the tie-in 421, and the windpipe 62 is an insulator communicated with outside. The wire 42 is inserted into the windpipe 62 and connected with a power (not shown) such so to transmit an alternating high-frequency high voltage on the high-voltage metal electrode 40. The ceramic pipe 20 is connected to ground and the dielectric discharging plasma area A formed between the high-voltage metal electrode 40 and the ceramic pipe 20, has a first proportional distance. The bottom plate 70 is connected to ground, and the low-temperature non-equilibrium plasma area B formed between the high-voltage metal electrode 40 and the grounding electrode 71, has also a second proportional distance. The first proportional distance of the dielectric discharging plasma area A and the second proportional distance of the low-temperature non-equilibrium plasma area B are decided by the plasma manufacturing gas entered therein and the voltage supplied therein. A ratio of the voltage supplied therein and the distance is 1˜5, for example:
If the voltage supplied therein is 5 kv, the distance may be 1˜5 mm;
If the voltage supplied therein is 4 kv, the distance may be 0.8˜4 mm;
If the voltage supplied therein is 3 kv, the distance may be 0.6˜3 mm;
If the voltage supplied therein is 2 kv, the distance may be 0.4˜2 mm;
If the voltage supplied therein is 1 kv, the distance may be 0.2˜1 mm; the other relation of the supplied therein and the distance can be achieved by analogy.
If the voltage supplied therein is 4 kv, the distance may be 0.8˜4 mm;
The orientation base 10 includes a coping 60 arranged on the top thereof. An outer screw is arranged around the top of the orientation base 10, and an inner screw is arranged on the inner surface of the bottom plate of the coping 60. The inner screw of the coping 60 can be coupled with the outer screw of the orientation base 10. The coping 60 is made of polytetrafluoroethylene.
Preferably, for increasing the plasma treatment area and the uniformity of the plasma jet electrode device 1, a rotating base 50 is arranged around the orientation base 10 as shown in
If no rotating base 50, the bottom plate 70 can be mounted on the orientation base 10. The orientation base 10 and the bottom plate 70 can be incorporated together. The bottom plate 70 also can be screwed with the orientation base 10.
A spray head 72 is arranged under the bottom plate 70. A protrusion 701 is extending from the bottom plate, and an outer screw is formed around the protrusion 701. An inner screw is formed on the inner surface of the spray head 72 such that the inner screw of the spray head 72 can be screwed with the outer screw of the protrusion 701. A plurality of tilted through holes 73 are arranged on the spray head 72 and distributed in a spreading form or a radial form.
Referring to
Furthermore, the present spray head 72 can be designed a linear shape as shown in
Referring to
The present plasma jet electrode device 1 may further includes a van flow controller (not shown) for supplying and controlling the van to the low-temperature non-equilibrium plasma area B. The van is organic, inorganic or metal organic plating manufacturing gas (such as Ethyl silicate Tetraethoxy-silicone, oxygen, polythene, methane, ethyne, etc.) or etching manufacturing gas (such as hydrogen, carbon tetrachloride, etc.) to make the plasma jet electrode device 1 using in the plating or etching.
Referring to
When the plasma jet electrode system 2 treats the work-piece (not shown), the temperature of the work-piece will increased. Therefore, the present plasma jet electrode system 2 may include also a cooling device 91 as shown in
The present plasma jet electrode system 2 may further includes a guiding device 92, such as an idler wheel, connected with the frame 90 to guide the frame 90 to move in a pre-determined direction for remaining the distance of the plasma jet electrode device 1 and the work-piece such that the plasma jet electrode device can treat the work-piece uniformly and the frame can operate steadily. Furthermore, the guiding device 92 includes an adjustable connecter 920 connected with the frame 90. Since the adjustable connecter 920 can adjust the height, the guiding device 92 can fit various distances of the work-piece and the plasma jet electrode device 1.
The present plasma jet electrode device 1 and the plasma jet electrode system 2 improves the treatment area and the uniformity of the low-temperature atmospheric pressure non-equilibrium plasma such that the plasma jet electrode device can be used more widely, such as cleaning and etching.
The above description is given by way of example, and not limitation. Given the above disclosure, one skilled in the art could devise variations that are within the scope and spirit of the invention disclosed herein, including configurations ways of the recessed portions and materials and/or designs of the attaching structures. Further, the various features of the embodiments disclosed herein can be used alone, or in varying combinations with each other and are not intended to be limited to the specific combination described herein.
Thus, the scope of the claims is not to be limited by the illustrated embodiments.
| Number | Date | Country | Kind |
|---|---|---|---|
| 95111710 A | Apr 2000 | TW | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 5440094 | Zapletal | Aug 1995 | A |
| 6800336 | Fornsel et al. | Oct 2004 | B1 |
| 6841754 | Cook et al. | Jan 2005 | B2 |
| 6881386 | Rabinovich et al. | Apr 2005 | B2 |
| 20020105408 | Aoki et al. | Aug 2002 | A1 |
| Number | Date | Country | |
|---|---|---|---|
| 20070235417 A1 | Oct 2007 | US |
