PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Information

  • Patent Application
  • 20070210036
  • Publication Number
    20070210036
  • Date Filed
    March 01, 2007
    17 years ago
  • Date Published
    September 13, 2007
    17 years ago
Abstract
A plasma processing is performed by using a plasma processing apparatus which includes a first electrode and a second electrode disposed relatively movable to the first electrode between which an object to be processed is disposed, and a solid dielectric material disposed to be continuously connected to at least processing starting and final end sides of the object. A process gas is introduced between the first and second electrodes under a state in which the first electrode abuts on entire surfaces of the object and the solid dielectric material, and a voltage is applied between the first and second electrodes to thereby process the object by plasma discharge generated between the first and second electrodes while moving the second electrode relatively to the first electrode and the object.
Description

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:



FIG. 1 is a longitudinal sectional view schematically showing a plasma processing apparatus for performing a first embodiment of a plasma processing method according to the present invention;



FIG. 2 is a sectional view, in an enlarged scale, showing an inner mechanism of a scanning head of the plasma processing apparatus according to the present invention;



FIG. 3 is a longitudinal sectional view schematically showing a plasma processing apparatus for performing a second embodiment of a plasma processing method according to the present invention;



FIG. 4 includes FIGS. 4A, 4B and 4C, which are sectional views showing examples of forming pixels pf respective colors of R, G, B on a glass substrate; and



FIG. 5 is a sectional view showing one example of a conventional atmospheric pressure plasma apparatus.


Claims
  • 1. A plasma processing method comprising the steps of: providing a first electrode and a second electrode disposed relatively movable to the first electrode;disposing an object to be processed between the first and second electrodes;disposing a solid dielectric material so as to be continuously connected to at least processing starting and final end sides of the object to be processed;introducing a process gas between the first and second electrodes under a state in which the first electrode abuts on entire surfaces of the object to be processed and the solid dielectric material;applying voltage to both the first and second electrodes; andprocessing the object to be processed by plasma discharge generated between the first and second electrodes while moving the second electrode relatively to the first electrode and the object to be processed.
  • 2. The plasma processing method according to claim 1, wherein the dielectric material is continuously connected to all the outer peripheral side of the object to be processed.
  • 3. The plasma processing method according to claim 1, wherein an area of the solid dielectric material facing the second electrode is larger than an area of the second electrode facing the first electrode.
  • 4. The plasma processing method according to claim 1, wherein the solid dielectric material includes a first solid dielectric material continuously connected to the processing final end side of the object to be processed and a second solid dielectric material which is laminated on the first solid dielectric material and on which at least the processing final end side of the object to be processed is mounted.
  • 5. The plasma processing method according to claim 1, wherein the solid dielectric material has a same relative dielectric ratio as that of the object to be processed.
  • 6. The plasma processing method according to claim 1, wherein the solid dielectric material has a same electric resistance as that of the object to be processed.
  • 7. The plasma processing method according to claim 1, wherein the first electrode is a flat electrode and the second electrode is a strip-shaped movable electrode.
  • 8. The plasma processing method according to claim 1, wherein the object to be processed is a glass substrate for manufacturing a color filter.
  • 9. A plasma processing apparatus comprising: a first electrode and a second electrode relatively movable to the first electrode between which an object to be processed is disposed;a solid dielectric material disposed on at least processing starting and final end sides of the object to be processed so as to be continuously connected thereto;a process gas introducing means configured to introduce a process gas to the object to be processed; anda power source for applying voltage to both the first and the second electrodes so as to generate a plasma therebetween.
  • 10. A method of manufacturing a color filter comprising the steps of: providing a first electrode and a second electrode disposed relatively movable to the first electrode;disposing an object on which a black matrix is formed between the first and second electrodes;disposing a solid dielectric material so as to be continuously connected to at least processing starting and final end sides of the object;introducing a process gas between the first and second electrodes under a state in which the first electrode abuts on entire surfaces of the object and the solid dielectric material;applying voltage to both the first and second electrodes;processing the object by plasma discharge generated between the first and second electrodes while moving the second electrode relatively to the first electrode and the object; andfilling a recessed portion of the black matrix formed on the object with a color ink.
  • 11. A color filter manufactured by the color filter manufacturing method according to claim 10.
Priority Claims (1)
Number Date Country Kind
2006-055977 Mar 2006 JP national