The present invention relates to a plasma torch generated by exciting an electric ion by an electrode, and more particularly to a plasma torch excitation device.
A plasma torch is a high-temperature flame capable of generating a beam of directed plasma jets. The temperature of the plasma torch can be as high as 3000° C.-10000° C., so it is commonly used in material processing, welding, waste treatment, ceramics cutting, metal cutting and semiconductor exhaust gas sintering.
Referring to
Further, the electrode housing 20a generally has a core bore 22a, and the gas collecting conduit 21 in the electrode housing 20a communicates with the outside through the core bore 22a. The gas in the gas collecting conduit 21 forms electricity jet, i.e. plasma torch, through the core bore 22a to be jetted to the outside. The bore wall of the core bore 22a provides excited electric ion (e−) collision and jump of the electrode 10a to become an electric field.
However, in the prior arts, the core bore 22a is mostly a short circular bore wall or a conical bore wall to provide the area of the ion (e−) collision and the distance of the jump to be too small or too short. In other words, under certain conditions of the power supply, the electric field generated by the core bore 22a of the electrode housing 20a in the prior arts is too small, so that the flame temperature and the flame length of the plasma torch are limited. In addition to affecting the service life of the electrode housing 20a, the ability to utilize a flame to sinter harmful substances in the exhaust gas, such as in a semiconductor exhaust gas treatment process, is also affected.
Since the flame temperature of the plasma torch is extremely high, the water channel 23 is generally opened in the existing electrode housing 20a, and water circulation is introduced into the water channel 23 to cool the temperature of the electrode housing 20a to avoid being subjected to the heat conduction of the flame temperature of the plasma torch, thereby affecting the service life of the electrode housing 20a. However, the structural design of the existing electrode housing 20a for water circulation for heat exchange is not ideal, which is one of the reasons for affecting the service life of the electrode housing 20a.
In view of this, the present invention aims to improve the arrangement environment between the electrode, the electrode housing and the gas collecting conduit in the electric field, and further provides a plasma torch excitation device.
In a preferred implementation of the present invention, the technical means of the present invention is to provide a plasma torch excitation device comprises:
In a further implementation of the present invention, the inner end of the core bore further comprises a circular bore wall extending from the conical bore wall, and the electric ion projecting end is adjacent to the circular bore wall.
In a further implementation of the present invention, the outer core cover of the electrode housing is provided with an electrode core seat such that a water cavity is formed between the electrode housing and the electrode core seat. The electrode core seat is provided with an inlet pipe and an outlet pipe connected to the water cavity. An outer wall of the electrode housing is formed in a fragment shape.
In a further implementation of the present invention, the electrode core frame is provided with an intake pipe for guiding gas into the gas collecting conduit, and the gas in the intake pipe is sequentially passed through the gas collecting conduit and pressurized then flows out through the core bore. The gas is one of He, Ar, N2 and O2.
In a further implementation of the present invention, the electrode core seat is disposed on a semiconductor exhaust gas treatment tank, and a reaction compartment is formed in the semiconductor waste gas treatment tank, the electrode housing serving as an outer end of a plasma torch blasting port is implanted in the reaction compartment. The semiconductor exhaust gas treatment tank is further provided with at least one exhaust gas introduction pipe, and one end of the exhaust gas introduction pipe is implanted in the reaction compartment. The top of the semiconductor exhaust gas treatment tank is provided with a head cover, and the electrode core seat and the exhaust gas introduction pipe are disposed on the head cover at intervals.
According to the above technology, the technical effect that can be produced by the present invention is that the area of the electric ion (e−) collision and the distance of the jump are larger and longer than those of the conventional core bore by the conical bore wall with the core bore length and depth so that the electric field of the core bore of the electrode housing become larger and the flame temperature and flame length of the plasma torch can be effectively improved.
The specific implementation details of the above technical means and their production performance will be described with reference to the following embodiments and drawings.
First, please refer to
The electrode core frame 30 is generally formed in the form of a seat tube, and the electrode core frame 30 has a hollow chamber 31. The electrode 10b is implemented in the form of a bar made of a conductive metal so that the electrode 10b has an electric ion projecting end 101 and a connecting terminal 102. The electrode 10b is centered by an insulating sleeve 11 to be fixed on the electrode core frame 30, and enables the electric ion projecting end 101 of the electrode 10b to be implanted in the chamber 31, thereby forming a gas collection conduit 32 surrounding between the surrounding wall surfaces of the electrode 10b and the chamber 31. The connecting terminal 102 of the electrode 10b protrudes from the electrode core frame 30 to connect to the power source.
The electrode housing 20b is made of a conductive metal and is fixed to the bottom end of the electrode core frame 30. The electrode housing 20b has a core bore 22b having an inner end 221 and an outer end 222. The inner end 221 is connected to the gas collecting conduit 32, and the outer end 222 serves as a flame jetting port of the plasma torch. The electric ion projecting end 101 of the electrode 10b is operatively located adjacent the inner end 221 of the core bore 22b.
Further, the core bore 22b comprises a conical bore wall 223 formed between the inner end 221 and the outer end 222. The conical bore wall 223 is formed by the inner end 221 gradually expanded to the outer end 222 to form. The aperture D of the outer end 222 formed by expanding from the inner end 221 is smaller than the depth H of conical bore wall 223 (as shown in
The inner end 221 of the core bore 22b further comprises a circular bore wall 224 extending from the conical bore wall 223, and the electric ion projecting end 101 of the electrode 10b is adjacent to the circular bore wall 224. In addition, the electrode housing 20b is further formed with a diversion hole 26 for connecting to the inner end 221 of the core bore 22b (that is, the circular bore wall 224). The inner end 221 of the core bore 22b (that is, the circular bore wall 224) is connected to the gas collecting conduit 32 via the diversion hole 26. The diversion hole 26 can guide the gas in the gas collecting conduit 32 to smoothly flow into the core bore 22b. As can be seen from the above, the circular bore wall 224 and the diversion hole 26 are a part of the inner end 221 of the core bore 22b and are described. Referring to
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The semiconductor exhaust gas treatment tank 50 is configured to have at least one exhaust gas introduction pipe 53 of a semiconductor process exhaust gas, and the exhaust gas introduction pipe 53 is implanted at one end of the reaction compartment 51 to form an outlet 531 through which the exhaust gas introduction pipe 53 is formed. The exhaust gas introduction pipe 53 is in communication with the reaction compartment 51 via the outlet 531. Further, the exhaust gas introduction pipe 53 and the electrode core seat 40 are disposed on the head cover 52 at intervals so that the exhaust gas introduction pipe 53 can guide the exhaust gas into the reaction compartment 51 from the top of the semiconductor exhaust gas treatment tank 50. In addition, the exhaust gas introduction pipe 53 is provided with an intake pressure detecting port 532. The intake pressure detecting port 532 can detect the pressure and the flow rate of the semiconductor process exhaust gas flowing into the reaction compartment 51 in the exhaust gas introducing pipe 53 by the instrument. The head cover 52 is further provided with an ultraviolet detecting port 54. The ultraviolet detecting port 54 can detect the working condition of the plasma torch by the ultraviolet detecting device.
The above embodiments are merely illustrative of preferred embodiments of the invention, but are not to be construed as limiting the scope of the invention. It should be noted that various modifications and improvements may be made without departing from the spirit and scope of the invention. Therefore, the present invention should be based on the content of the claims defined in the scope of the patent application.
Number | Date | Country | Kind |
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107124661 | Jul 2018 | TW | national |