Claims
- 1. A heater, comprising a partially and/or entirely stabilized ZrO.sub.2 -base substrate, an Al.sub.2 O.sub.3 -base insulating layer disposed on a surface of the substrate and having insulating properties at high temperature, and an electron-conductive pattern to generate heat disposed on said Al.sub.2 O.sub.3 -base layer, said substrate and insulating layer having been formed by simultaneous sintering, and wherein the A.sub.2 O.sub.3 layer has a thickness of at least 20 microns.
- 2. A heater as defined in claim 1, wherein the sintering shrinkage modulus of the Al.sub.2 O.sub.3 -base insulating layer is smaller than that of the ZrO.sub.2 -base material forming the substrate.
- 3. A heater as defined in claim 2, wherein the ratio of the sintering shrinkage modulus of said ZrO.sub.2 -base layer to the sintering shrinkage modulus of the Al.sub.2 O.sub.3 -base layer is 1.01 : 1 to 1.08:1.
- 4. A heater as defined in claim 1, wherein the Al.sub.2 O.sub.3 -base insulating layer has a thickness of 1/100 to 20/100 relative to the ZrO.sub.2 -base substrate.
- 5. A heater as defined in claim 1, wherein further comprises at least one protective layer covering the electron-conductive pattern.
- 6. A heater as claimed in claim 1, wherein the Al.sub.2 O.sub.3 -base layer is formed directly on the ZrO.sub.2 -base substrate, and the A.sub.2 O.sub.3 layer is in substantially continuous contact with the ZrO.sub.2 -base substrate.
- 7. A heater, comprising a partially and/or entirely stabilized ZrO.sub.2 -base substrate, an Al.sub.2 O.sub.3 -base layer disposed on a surface of the substrate and having insulating properties at high temperature, and an electron-conductive pattern to generate heat disposed on said Al.sub.2 O.sub.3 -base layer, and wherein the A.sub.2 O.sub.3 layer has a thickness of at least 20 microns.
- 8. A heater as defined in claim 7, wherein the sintering shrinkage modulus of said Al.sub.2 O.sub.3 -base layer is smaller than that of ZrO.sub.2 -base material forming said substrate.
- 9. A heater as defined in claim 8, wherein the ratio of the sintering shrinkage modulus of said ZrO.sub.2 -base layer to the sintering shrinkage modulus of the Al.sub.2 O.sub.3 -base layer is 1.01:1 to 1.08:1.
- 10. A heater as defined in claim 7, wherein further comprises at least one protective layer covering the electron-conductive pattern.
- 11. A heater as defined in claim 7, wherein said Al.sub.2 O.sub.3 -base layer has a thickness of 1/100 to 20/100 relative to the ZrO.sub.2 -base substrate.
- 12. A heater as claimed in claim 7, wherein the Al.sub.2 O.sub.3 -base layer is formed directly on the ZrO.sub.2 -base substrate, and the A.sub.2 O.sub.3 layer is in substantially continuous contact with the ZrO.sub.2 -base substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
59-260069 |
Dec 1984 |
JPX |
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Parent Case Info
This application is a continuation of U.S. applicatin Ser. No. 805,808, filed Dec. 6, 1985, new abandoned.
US Referenced Citations (4)
Continuations (1)
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Number |
Date |
Country |
Parent |
805808 |
Dec 1985 |
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