POLISHING DEVICE AND POLISHING METHOD

Abstract

A polishing device includes a substrate holder, a dispenser configured to dispense an abrasive to a surface of a substrate held by the substrate holder, a polisher including an elastic body configured to polish the surface of the substrate as the elastic body is rotated with respect to the surface of the substrate. An area of contact between the elastic body and the surface of the substrate during polishing is smaller than a surface area of a region of the substrate that is to be polished by the elastic body. The elastic body is moved, while the elastic body is rotated, with a downward velocity component prior to contacting the surface of the substrate and with an upward velocity component after the elastic body comes into contact with the surface of the substrate.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2019-052002, filed Mar. 19, 2019, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a polishing device and a polishing method.

BACKGROUND

Semiconductor devices, such as memory devices and logic devices, are manufactured by depositing films on a substrate and etching films repeatedly to form a desired circuit pattern on the substrate. During depositing of films and etching of films, for example, a convex defect, which protrudes from the surface of the substrate, may be occasionally formed on the substrate.

When the surface of the substrate has such a convex defect, an unfavorable situation, known as defocusing, arises in a lithography step for forming a circuit pattern to hinder formation of the circuit pattern as desired. In particular, this situation becomes more serious as a minimum size of circuit patterns decreases in accordance with progress in microfabrication of semiconductor devices.

When a film is further deposited over the convex defect, for example, an enlarged convex defect is formed on the buried convex defect. As the stacking number of films increases, the convex defect continues to be enlarged. This increases a region where defocusing hinders formation of the desired circuit pattern, and consequently, the above-described unfavorable situation becomes even more serious.

When memory cells of a memory device have a three-dimensional configuration, for example, the stacking number of films formed on a substrate drastically increases. This increases an influence of the convex defect on formation of circuit patterns, thus decreasing the yield of semiconductor devices. Consequently, it is desirable to effectively remove the convex defect on the surface of the substrate.

DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic diagrams illustrating a polishing device according to a first embodiment.

FIG. 2 is a diagram illustrating a polisher of the polishing device according to the first embodiment.

FIGS. 3A to 3C are diagrams illustrating functions and effects of the polishing device and a polishing method according to the first embodiment.

FIGS. 4 and 5 are diagrams illustrating functions and effects of the polishing method according to the first embodiment.

FIGS. 6A and 6B are schematic diagrams illustrating a polishing device according to a second embodiment.

FIGS. 7A and 7B are schematic diagrams illustrating a polishing device according to a third embodiment.

FIGS. 8A and 8B are schematic diagrams illustrating a polishing device according to a fourth embodiment.

DETAILED DESCRIPTION

Embodiments provide a polishing device and a polishing method that effectively remove convex defects on a surface of a substrate.

In general, according to an embodiment, a polishing device includes a substrate holder, a dispenser configured to dispense an abrasive to a surface of a substrate held by the substrate holder, a polisher including an elastic body configured to polish the surface of the substrate as the elastic body is rotated with respect to the surface of the substrate. An area of contact between the elastic body and the surface of the substrate during polishing is smaller than a surface area of a region of the substrate that is to be polished by the elastic body. The elastic body is moved, while the elastic body is rotated, with a downward velocity component prior to contacting the surface of the substrate and with an upward velocity component after the elastic body comes into contact with the surface of the substrate.

Description will now be made on embodiments of the present disclosure with reference to the drawings. In the following description, the same or similar components are denoted with identical reference numerals and signs, and components described once will not be elaborated repeatedly unless necessary.

Hereinafter, a polishing device and a polishing method according to each of the embodiments will be described with reference to the drawings.

First Embodiment

A polishing device according to a first embodiment includes: a holder configured to hold a substrate; a dispenser configured to dispense abrasive to a surface of the substrate; and a polisher including an elastic body and configured to polish the surface of the substrate using the elastic body. An area of contact between the elastic body and the surface of the substrate is smaller than a surface area of the substrate. A direction of a component of a velocity vector of the elastic body in polishing in a normal direction of the surface of the substrate is reversed after the elastic body comes into contact with the surface of the substrate.

A polishing method according to the first embodiment includes: dispensing abrasive to a surface of a substrate; bringing an elastic body into contact with the surface of the substrate in such a manner that an area of contact between the elastic body and the surface of the substrate is smaller than a surface area of the substrate; and moving the elastic body in such a manner that a direction of a component of a velocity vector of the elastic body in a normal direction of the surface of the substrate is reversed after the elastic body comes into contact with the surface of the substrate so as to polish the surface of the substrate.

FIGS. 1A and 1B are schematic diagrams illustrating the polishing device according to the first embodiment. FIG. 1A illustrates a cross-sectional view of the polishing device, and FIG. 1B illustrates a top view of the polishing device. A polishing device 100 according to the first embodiment polishes a surface of a substrate such as a semiconductor wafer.

The polishing device 100 according to the first embodiment includes a stage 10 (also referred to as the holder), a support shaft 12, an abrasive dispensing nozzle 14 (also referred to as the dispenser), a polisher 16, a first rotation mechanism 18, a movement mechanism 20, a housing 22, and a controller 24. The polisher 16 includes a polishing pad 16a (also referred to as the elastic body) and a rotation shaft 16b.

A semiconductor wafer W (also referred to as the substrate) to be polished is placed on the stage 10. The semiconductor wafer W is secured on the stage 10 by, for example, vacuum suction from a rear surface side. A front surface of the semiconductor wafer W faces upward. That is, the front surface of the semiconductor wafer W is on an opposite side to the stage 10 side.

The support shaft 12 supports the stage 10. The support shaft 12 secures the stage 10.

The abrasive dispensing nozzle 14 dispenses slurry to the front surface of the semiconductor wafer W. The slurry is an example of the abrasive.

The slurry includes abrasive grains. The abrasive grains are particles including silicon oxide, aluminum oxide, or cerium oxide, for example.

The polisher 16 is disposed on the semiconductor wafer W side of the stage 10. The polisher 16 polishes the front surface of the semiconductor wafer W.

The polisher 16 includes the polishing pad 16a and the rotation shaft 16b. The polishing pad 16a is disposed around the rotation shaft 16b.

The polishing pad 16a is an example of the elastic body. An storage modulus of the polishing pad 16a is, for example, equal to or higher than 0.01 GPa and equal to or less than 10 GPa. The storage modulus of the polishing pad 16a is measured by a method provided in JIS K7244-4 “Plastics—Determination of dynamic mechanical properties—Part 4: Tensile vibration —Non-resonance method”.

The polishing pad 16a includes resin or non-woven fabric, for example. The polishing pad 16a is made of a material such as polyurethane resin.

The polishing pad 16a is circular or elliptic in cross-section perpendicular to the front surface of the semiconductor wafer W. FIG. 1A illustrates a case where a surface of the polishing pad 16a is circular in cross-section perpendicular to the front surface of the semiconductor wafer W.

The rotation shaft 16b extends in a direction parallel to a surface of the stage 10. The rotation shaft 16b is parallel to the front surface of the semiconductor wafer W. Rotation of the rotation shaft 16b causes the polishing pad 16a to rotate about the rotation shaft 16b in a circumferential direction of the polishing pad 16a. The polishing pad 16a makes rotary movement.

FIG. 2 is a diagram illustrating the polisher 16 of the polishing device 100 according to the first embodiment. FIG. 2 is an enlarged view of the polisher 16 and the front surface of the semiconductor wafer W. FIG. 2 illustrates a state where the front surface of the semiconductor wafer W is being polished.

FIG. 2 illustrates a state of the polishing pad 16a in contact with the front surface of the semiconductor wafer W. When the polishing pad 16a comes into contact with the front surface of the semiconductor wafer W, the polishing pad 16a is elastically deformed.

A contact portion (S in FIG. 2) where the polishing pad 16a polishing the front surface of the semiconductor wafer W is in contact with the front surface of the semiconductor wafer W has a contact area smaller than a surface area of the semiconductor wafer W. In other words, the polishing pad 16a is only in contact with part of the front surface of the semiconductor wafer W. A minimum width (Wmin) of the contact portion S is, for example, equal to or less than 1/100 of a diameter of the semiconductor wafer W.

A direction of a component of a velocity vector of the polishing pad 16a in polishing in a normal direction of the front surface of the semiconductor wafer W is reversed after the polishing pad 16a comes into contact with the front surface of the semiconductor wafer W. For example, a velocity vector before the polishing pad 16a in rotation comes into contact with the front surface of the semiconductor wafer W is a vector Va in FIG. 2. For example, a velocity vector after the polishing pad 16a in rotation comes into contact with the front surface of the semiconductor wafer W is a vector Vb in FIG. 2.

A component of the vector Va in the normal direction of the front surface of the semiconductor wafer W is a vector Vax in FIG. 2. A component of the vector Vb in the normal direction of the front surface of the semiconductor wafer W is a vector Vbx in FIG. 2. The vector Vax and the vector Vbx have reversed directions.

The first rotation mechanism. 18 causes the polishing pad 16a to rotate about the rotation shaft 16b in the circumferential direction of the polishing pad 16a. The first rotation mechanism 18 includes components such as a motor and a bearing to rotatably hold the rotation shaft 16b.

The movement mechanism 20 causes the polisher 16 to move relative to the semiconductor wafer W in directions parallel to the front surface of the semiconductor wafer W. The movement mechanism 20 moves the polisher 16 in the directions parallel to the front surface of the semiconductor wafer W. When the polisher 16 is moved using the movement mechanism 20, the front surface of the semiconductor wafer W can be wholly polished. The movement mechanism 20 includes components such as a motor and a conversion mechanism to convert rotary motion of the motor into linear motion.

The housing 22 contains components such as the stage 10, the support shaft 12, the abrasive dispensing nozzle 14 (the dispenser), the polisher 16, the first rotation mechanism 18, and the movement mechanism 20. The housing 22 protects components such as the stage 10, the support shaft 12, the abrasive dispensing nozzle 14 (the dispenser), the polisher 16, the first rotation mechanism 18, and the movement mechanism 20.

The controller 24 controls the abrasive dispensing nozzle 14, the polisher 16, the first rotation mechanism 18, and the movement mechanism 20. For example, the controller 24 controls a dispensing start and end of the slurry from the abrasive dispensing nozzle 14 and a dispensing amount of the slurry. The controller 24 respectively controls the first rotation mechanism 18 and the movement mechanism. 20 to control a rotation speed and a movement speed of the polishing pad 16a. The controller 24 may be hardware such as a circuit board or a combination of hardware and software such as a control program stored in a memory.

Next, the polishing method according to the first embodiment will be described. A case of using the polishing device 100 according to the first embodiment will be described as an example.

In the polishing method according to the first embodiment, the front surface of the semiconductor wafer W is polished. A circuit pattern is formed on the semiconductor wafer W to be polished, for example, by depositing films and etching films repeatedly. At least one of an insulating film and a conductive film, for example, is exposed on the front surface of the semiconductor wafer W to be polished.

First, the semiconductor wafer W is conveyed into the housing 22 and placed on the stage 10. The semiconductor wafer W is secured on the stage 10 by, for example, vacuum suction from the rear surface side.

Next, the slurry is dispensed to the front surface of the semiconductor wafer W. The slurry is dispensed from the abrasive dispensing nozzle 14.

Next, the polishing pad 16a of the polisher 16 is brought into contact with the front surface of the semiconductor wafer W. The contact portion (S in FIG. 2) where the polishing pad 16a is in contact with the front surface of the semiconductor wafer W has a contact area smaller than the surface area of the semiconductor wafer W.

The polishing pad 16a is rotated about the rotation shaft 16b in the circumferential direction of the polishing pad 16a. The direction of the component of the velocity vector of the polishing pad 16a in polishing in the normal direction of the front surface of the semiconductor wafer W is reversed after the polishing pad 16a comes into contact with the front surface of the semiconductor wafer W. The front surface of the semiconductor wafer W is polished by the polishing pad 16a. A surface of the polishing pad 16a has a plurality of uneven portions. While the front surface of the semiconductor wafer W is being polished, the slurry remains in the plurality of uneven portions.

With the polishing pad 16a being kept rotating, the polisher 16 is moved in directions parallel to the front surface of the semiconductor wafer W, as indicated with the arrows in FIG. 1B. The polisher 16 is moved to polish the entire front surface of the semiconductor wafer W.

After polishing the entire front surface of the semiconductor wafer W is ended, dispensing the slurry to the front surface of the semiconductor wafer W is ended. Then, the semiconductor wafer W is conveyed out of the housing 22.

Next, functions and effects of the polishing device 100 and the polishing method according to the first embodiment will be described.

When a front surface of a semiconductor wafer has a convex defect in manufacturing a semiconductor device, an unfavorable situation, known as defocusing, arises in a lithography step to hinder formation of a desired circuit pattern. In particular, this situation becomes more serious as a minimum size of circuit patterns decreases in accordance with progress in microfabrication of semiconductor devices.

When a film is further deposited over the convex defect, for example, an enlarged convex defect is formed on the buried convex defect. As the stacking number of films increases, the convex defect continues to be enlarged. This increases a region where defocusing hinders formation of the desired circuit pattern, and consequently, the above-described unfavorable situation becomes even more serious.

The polishing device and the polishing method according to the first embodiment enable effective removal of convex defects on a front surface of a semiconductor wafer.

FIGS. 3A to 3C are diagrams illustrating functions and effects of the polishing device and the polishing method according to the first embodiment. FIG. 3A is a schematic diagram illustrating a convex defect. FIG. 3B is a diagram illustrating a polishing method according to a comparative example. FIG. 3C is a diagram illustrating the polishing method according to the first embodiment.

Suppose, for example, that such a convex defect 30 as illustrated in FIG. 3A exists on the semiconductor wafer W. The convex defect 30 is formed by forming a film over foreign matter 29 in a lower layer.

The convex defect 30 illustrated in FIG. 3A is not attached to the front surface of the semiconductor wafer W but is integral to the surface. Therefore, it is difficult to remove the convex defect 30 by cleaning of a small mechanical action such as wet etching cleaning and brush cleaning.

FIG. 3B illustrates a polishing method in which a polishing pad 17 is moved parallel to the front surface of the semiconductor wafer W. In this case, the convex defect 30 is removed by shearing stress applied in a direction parallel to the front surface of the semiconductor wafer W.

The polishing pad 17 continues to be moved laterally, and the shearing stress is continuously applied. Consequently, for example, the removed convex defect 30 is dragged on the front surface of the semiconductor wafer W by the polishing pad 17 and may unfortunately form a large scratch in the front surface of the semiconductor wafer W. Moreover, for example, the foreign matter 29 buried in the lower layer may be drawn out and dragged on the front surface of the semiconductor wafer W and may form an even larger scratch in the front surface of the semiconductor wafer W.

In the polishing method according to the first embodiment, in a similar manner to the comparative example, shearing stress is applied in a direction parallel to the front surface of the semiconductor wafer W in the contact portion of the polishing pad 16a so as to remove the convex defect 30. The polishing method according to the first embodiment differs from the comparative example in that the polishing pad 16a is rotated. Consequently, after removing the convex defect 30, the polishing pad 16a is moved upward. Therefore, no scratch is formed by dragging the convex defect 30 and by drawing out the foreign matter 29 buried in the lower layer and dragging the foreign matter 29.

The polishing device and the polishing method according to the first embodiment enable effective removal of convex defects on a front surface of a semiconductor wafer without scratching the front surface of the semiconductor wafer.

FIG. 4 is a diagram illustrating functions and effects of the polishing method according to the first embodiment. As illustrated in FIG. 4, preferably, a circumferential width (Wx in FIG. 4) of the portion where the polishing pad 16a is in contact with the semiconductor wafer W is equal to or less than a minimum size of a pattern formed on the semiconductor wafer W. In the case illustrated in FIG. 4, the minimum size of the pattern formed on the semiconductor wafer W is a width (L1 in FIG. 4) of wiring 40 or an interval (L2 in FIG. 4) between pieces of the wiring 40.

When the above-described condition is satisfied, a length of a scratch formed by the polishing pad 16a dragging the convex defect 30 or such matter becomes equal to or less than the minimum size of the pattern formed on the semiconductor wafer W. This prevents, for example, disconnection of the wiring 40 and short-circuiting between pieces of the wiring 40.

FIG. 5 is a diagram illustrating functions and effects of the polishing method according to the first embodiment. FIG. 5 illustrates a case where the polisher 16 is moved horizontally relative to the semiconductor wafer W.

As illustrated in FIG. 5, preferably, a distance (d in FIG. 5) of movement of a point (A in FIG. 5) in the polishing pad 16a on the front surface of the semiconductor wafer W while the point is in contact with the semiconductor wafer W is equal to or less than the minimum size of the pattern formed on the semiconductor wafer W. In the case illustrated in FIG. 5, the minimum size of the pattern formed on the semiconductor wafer W is the width (L1 in FIG. 5) of the wiring 40 or the interval (L2 in FIG. 5) between pieces of the wiring 40.

When the above-described condition is satisfied, a length of a scratch formed by the polishing pad 16a dragging the convex defect 30 or such matter becomes equal to or less than the minimum size of the pattern formed on the semiconductor wafer W. This prevents, for example, disconnection of the wiring 40 and short-circuiting between pieces of the wiring 40.

The storage modulus of the polishing pad 16a is preferably equal to or higher than 0.01 GPa and equal to or less than 10 GPa and more preferably equal to or higher than 0.1 GPa and equal to or less than 1 GPa. When the storage modulus is higher than the lower limit value, removal efficiency of the convex defect, for example, is increased. When the storage modulus is less than the upper limit value, abrasion of a region other than the convex defect is prevented.

In view of removing the convex defect effectively, preferably, the polishing pad 16a includes resin or non-woven fabric.

As described above, the polishing device and the polishing method according to the first embodiment enable effective removal of convex defects.

Second Embodiment

A polishing device according to a second embodiment differs from the first embodiment in that the polishing device according to the second embodiment further includes a second rotation mechanism to rotate the holder to revolve the substrate about the center of the substrate. A polishing method according to the second embodiment differs from the first embodiment in that the polishing method according to the second embodiment revolves the substrate about the center of the substrate. In the following description, some of the contents overlapping with the first embodiment will not be repeated.

FIGS. 6A and 6B are schematic diagrams illustrating the polishing device according to the second embodiment. FIG. 6A illustrates a cross-sectional view of the polishing device, and FIG. 6B illustrates a top view of the polishing device. A polishing device 200 according to the second embodiment polishes a surface of a substrate such as a semiconductor wafer.

The polishing device 200 according to the second embodiment includes the stage 10, the support shaft 12, the abrasive dispensing nozzle 14, the polisher 16, the first rotation mechanism 18, the movement mechanism 20, the housing 22, the controller 24, and a second rotation mechanism 26. The polisher 16 includes the polishing pad 16a and the rotation shaft 16b.

The second rotation mechanism 26 rotates the stage 10 to revolve the semiconductor wafer W about the center C of the semiconductor wafer W. The second rotation mechanism 26 rotates the support shaft 12.

The second rotation mechanism 26 includes components such as a motor and a bearing to rotatably hold the support shaft 12. The second rotation mechanism 26 is controlled by the controller 24.

In the polishing method according to the second embodiment, the semiconductor wafer W is revolved about the center C of the semiconductor wafer W. Revolving the semiconductor wafer W increases shearing stress at the contact portion of the polishing pad 16a. This improves removal performance of convex defects.

As described above, the polishing device and the polishing method according to the second embodiment enable more effective removal of convex defects than the first embodiment.

Third Embodiment

A polishing device according to a third embodiment differs from the first embodiment in that the polishing device according to the third embodiment includes a plurality of polishers. In the following description, some of the contents overlapping with the first embodiment will not be repeated.

FIGS. 7A and 7B are schematic diagrams illustrating the polishing device according to the third embodiment. FIG. 7A illustrates a cross-sectional view of the polishing device, and FIG. 7B illustrates a top view of the polishing device. A polishing device 300 according to the third embodiment polishes a surface of a substrate such as a semiconductor wafer.

The polishing device 300 according to the third embodiment includes the stage 10, the support shaft 12, the abrasive dispensing nozzle 14, the polishers 16, the first rotation mechanism 18, the movement mechanism 20, the housing 22, the controller 24, and the second rotation mechanism 26. The polishers 16 each include the polishing pad 16a and the rotation shaft 16b.

The polishing device 300 includes the plurality of polishers 16. FIGS. 7A and 7B illustrate an example of two polishers 16. The polishing device 300 may include three polishers 16 or more.

The polishing device 300 including the plurality of polishers 16 can shorten polishing time.

As described above, the polishing device according to the third embodiment enables effective removal of convex defects in a similar manner to the first embodiment. Furthermore, polishing time can be shortened.

Fourth Embodiment

A polishing device according to a fourth embodiment differs from the first embodiment in that the elastic body has a length larger than a maximum length of the substrate. In the following description, some of the contents overlapping with the first embodiment will not be repeated.

FIGS. 8A and 8B are schematic diagrams illustrating the polishing device according to the fourth embodiment. FIG. 8A illustrates a cross-sectional view of the polishing device, and FIG. 8B illustrates a top view of the polishing device. A polishing device 400 according to the fourth embodiment polishes a surface of a substrate such as a semiconductor wafer.

The polishing device 400 according to the fourth embodiment includes the stage 10, the support shaft 12, the abrasive dispensing nozzle 14), the polisher 16, the first rotation mechanism 18, the movement mechanism 20, the housing 22, the controller 24, and the second rotation mechanism 26. The polisher 16 includes the polishing pad 16a and the rotation shaft 16b.

The polishing pad 16a of the polishing device 400 has a length (L3 in FIG. 8B) larger than a maximum length (diameter D in FIG. 8B) of the semiconductor wafer W.

Since the length L3 of the polishing pad 16a is larger than the diameter D of the semiconductor wafer W, the polishing device 400 can shorten polishing time.

As described above, the polishing device according to the fourth embodiment enables effective removal of convex defects in a similar manner to the first embodiment. Furthermore, polishing time can be shortened.

In describing the first to fourth embodiments as examples, the surface of the polishing pad 16a is circular in cross-section perpendicular to the front surface of the semiconductor wafer W. However, the surface of the polishing pad 16a may be elliptic in cross-section.

In describing the first to fourth embodiments as examples, the polishing pad 16a makes rotary movement. However, the polishing pad 16a may make reciprocating movement like a pendulum. In this case, for example, a cross-sectional shape of the polishing pad 16a may be part of a circle to reduce the polishing pad 16a in size. For example, the cross-sectional shape of the polishing pad 16a may be a fan shape.

In describing the first, third, and fourth embodiments as examples, the stage 10 is secured, and the polisher 16 is moved horizontally. However, the polisher 16 may be secured, and the stage 10 may be moved horizontally.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.

Claims

1. A polishing device comprising: a substrate holder;a dispenser configured to dispense an abrasive to a surface of a substrate held by the substrate holder; anda polisher including an elastic body configured to polish the surface of the substrate as the elastic body is rotated with respect to the surface of the substrate, whereinan area of contact between the elastic body and the surface of the substrate during polishing is smaller than a surface area of a region of the substrate that is to be polished by the elastic body, andthe elastic body is moved, while the elastic body is rotated, with a downward velocity component prior to contacting the surface of the substrate and with an upward velocity component after the elastic body comes into contact with the surface of the substrate.

2. The polishing device according to claim 1, wherein the elastic body is circular or elliptical in cross-section perpendicular to the surface of the substrate, the polishing device further comprising a first rotation mechanism configured to rotate the elastic body about a center axis thereof which extends parallel to the surface of the substrate.

3. The polishing device according to claim 2, further comprising a second rotation mechanism configured to rotate the substrate holder on which the substrate is held, about a center axis that extends vertically from a center of a surface region of the substrate holder.

4. The polishing device according to claim 1, wherein a length of the elastic body in a direction along a rotational axis of the elastic body is greater than a diameter of a surface region of the substrate holder on which the substrate is held.

5. The polishing device according to claim 1, further comprising a movement mechanism configured to move the polisher relative to the substrate in directions along the surface of the substrate.

6. The polishing device according to claim 1, wherein the elastic body has an storage modulus equal to or higher than 0.01 GPa and equal to or less than 10 GPa.

7. The polishing device according to claim 1, wherein the elastic body comprises resin or non-woven fabric.

8. The polishing device according to claim 1, wherein the abrasive comprises abrasive grains.

9. The polishing device according to claim 1, wherein the polishing device comprises a plurality of elastic bodies configured to be rotated during the polishing.

10. The polishing device according to claim 9, wherein the plurality of elastic bodies are configured to be rotated about rotational axes, respectively, that extend parallel to a surface of the substrate holder.

11. A polishing method comprising: placing a substrate onto a substrate holder;dispensing an abrasive onto a surface of the substrate;rotating an elastic body to polish the surface of the substrate;moving the elastic body, while rotating the elastic body, with a downward velocity component to make contact with the surface of the substrate, and with an upward velocity component after the elastic body comes into contact with the surface of the substrate, whereinan area of contact between the elastic body and the surface of the substrate is smaller than a surface area of a region of the substrate that is to be polished by the elastic body.

12. The polishing method according to claim 11, wherein the elastic body is circular or elliptical in cross-section perpendicular to the surface of the substrate, andthe elastic body is rotated about a center axis thereof which extends parallel to the surface of the substrate.

13. The polishing method according to claim 11, further comprising rotating the substrate holder on which the substrate is placed, about a center axis that extends vertically from a center of a surface region of the substrate holder.

14. The polishing method according to claim 11, wherein a portion of the elastic body that is in contact with the substrate has a width in the circumferential direction equal to or less than a minimum size of a pattern formed on the substrate.

15. The polishing method according to claim 11, wherein a distance of movement of an arbitrary point in the elastic body on the surface of the substrate while the point is in contact with the substrate is equal to or less than a minimum size of a pattern formed on the substrate.

16. The polishing method according to claim 11, wherein the elastic body has an storage modulus equal to or higher than 0.01 GPa and equal to or less than 10 GPa.

17. The polishing method according to claim 11, wherein the elastic body comprises resin or non-woven fabric.

18. The polishing method according to claim 11, wherein the abrasive comprises abrasive grains.

19. The polishing method according to claim 11, further comprising: moving a second elastic body, while rotating the second elastic body, with a downward velocity component to make contact with the surface of the substrate, and with an upward velocity component after the second elastic body comes into contact with the surface of the substrate, whereinan area of contact between the second elastic body and the surface of the substrate is smaller than a surface area of a region of the substrate that is to be polished by the second elastic body.

20. The polishing method according to claim 19, wherein the elastic body and the second elastic body rotate about the same rotational axis.