Polymer chip PTC thermistor

Information

  • Patent Grant
  • 6556123
  • Patent Number
    6,556,123
  • Date Filed
    Wednesday, January 2, 2002
    23 years ago
  • Date Issued
    Tuesday, April 29, 2003
    22 years ago
Abstract
A chip PTC thermistor is provided which is capable of increasing the rate of increase in resistance when an overcurrent is applied, thereby increasing the breakdown voltage. The PTC thermistor comprises: a first main electrode and a first sub-electrode disposed on a first face of a conductive polymer with PTC properties; a second main electrode and a second sub-electrode disposed on a second face of the conductive polymer, which is facing the first face; and first and second side electrode and disposed on side faces of the conductive polymer. Cut-off sections are provided to the vicinity of joints of the first main electrode and the first side electrode, and joints of the second main electrode and the second side electrode.
Description




This Application is a U.S. National Phase Application of PCT International Application PCT/JP00/01228.




FIELD OF THE INVENTION




The present invention relates to a chip positive temperature coefficient (hereinafter, PTC) thermistor comprising conductive polymers having PTC properties.




BACKGROUND OF THE INVENTION




When overcurrent is applied in an electric circuit, conductive polymers with PTC properties spontaneously heat up and thermally expand to become a high resistance polymers, thereby lowering the current to a safe low-current level. As such, PTC thermistors can be used as an overcurrent protection element.




One of the conventional chip PTC thermistor configurations is disclosed in the Published Japanese Translation of PCT Publication No. H09-503097. FIG.


18


(


a


) is a sectional view of the conventional chip PTC thermistor, and FIG.


18


(


b


), a top view. The PTC thermistor comprises:




a resistive element


1


which is made with conductive polymer having PTC properties;




electrodes


2




a


and


2




b,


and


2




c


and


2




d


made with metal foil formed respectively on the front and back faces of the resistive element


1


;




a pair of through-holes


3


having openings


3




a


and


3




b


which penetrate through the resistive element


1


; and




conductive members


4




a


and


4




b


formed by plating on the internal walls of the through-holes


3


in such a manner that they electrically connect the electrodes


2




a


and


2




d,


and


2




b


and


2




c.






Another chip PTC thermistor which achieves soldered sections when mounted on a circuit board and allows flow soldering. As shown in FIG.


19


(


a


), a perspective view, FIG.


19


(


b


), a sectional view, and FIG.


19


(


c


), exploded perspective view, the chip PTC thermistor comprises;




a conductive polymer sheet


5


having PTC properties;




electrodes


6




a


and


6




b,


and


6




c


and


6




d


made with metal foil formed respectively on the front and back faces of the conductive polymer


5


; and




side face electrodes


7




a


and


7




b


formed by plating on the side faces of the conductive polymer


5


in such a manner that they electrically connect the electrodes


6




a


and


6




d,


and


6




b


and


6




c.


The conductive polymer


5


is a mixture of polymeric materials such as polyethylene and carbon black.




The conductive polymer


5


of the PTC thermistor expand spontaneously due to the heat (heat energy P=I


2


×R, I: current, R: PTC thermistor resistance) generated when overcurrent is applied, resistance. In the case of the chip PTC thermistor of the present invention, the electrodes


6




a


and


6




c


restrict expansion of the conductive polymer sheet


5


in the perpendicular direction, the same direction of the current passage. This prevents the rate of increase in resistance of the PTC thermistor from increasing to the capacity of the conductive polymer


5


. Consequently, the range of the increase in resistance, keeps the balance of the power consumption (P=V


2


/R, V: applied voltage), low, thereby preventing the voltage from rising.




SUMMARY OF THE INVENTION




The chip PTC thermistor of the present invention comprises;




a conductive polymer having PTC properties;




a first main electrode disposed on and in contact with the conductive polymer;




a second main electrode disposed sandwiching the conductive polymer with the first main electrode;




a first electrode electrically connected to the first main electrode;




a second electrode electrically connected to the second main electrode; and




a means for releasing restriction against deformation comprising a cut-off section or a opening, disposed at least on one of the first and second main electrodes.




Since this construction comprises the means for releasing restriction against deformation, expansion of the conductive polymer to the perpendicular direction can be facilitated when overcurrent is applied to the chip PTC thermistor. As such, the resistivity of the conductive polymer increases, pushing up the rate of increase in resistance. Therefore, performance of the chip PTC thermistor in increasing resistance improves, thereby enhancing withstand voltage.




As the need arises, odd or even-numbered inner electrodes can be disposed in between the first and second main electrodes.




In the case of the chip PTC thermistor of the present invention, it is desirable to dispose the means for releasing restriction against deformation in the vicinity of the joints between the main electrodes and the first and second electrodes, in such a manner that each of the adjacent means being disposed symmetrically to the center of the space between the first and second electrodes. This construction allows the conductive polymer to expand more easily, thus further facilitating increases in its resistance and withstand voltage.




The means for releasing restriction against deformation formed on the main electrode should be preferably disposed rotationally symmetrically on a face parallel to the main electrode. This construction averages the distortion of the PTC thermistor caused by the expansion of the conductive polymer, thereby enhancing reliability.




The means for releasing restriction against deformation should preferably be made with an opening or a cut-off section. The opening or a cut-off section helps the conductive polymer to expand, thus further facilitating increases in resistance.




According to the chip PTC thermistor of the present invention, it is preferable to provide a first sub-electrode on a same plane of the first main electrode in such a manner that the first sub-electrode is electrically separated from the first main electrode and electrically connected to the second electrode.




Preferably, the first electrode is a first side electrode disposed on one of the side faces of the conductive polymer while the second electrode is a second side electrode disposed on the other side face of the conductive polymer.




The first and second electrodes can be respectively first and second internal through electrodes penetrating through the conductive polymer.




The first electrode can also comprise the first side electrode disposed on one of the side faces of the conductive polymer and the first internal through electrode penetrating through the conductive polymer while the second electrode comprises the second side electrode disposed on the other side face of the conductive polymer and the second internal through electrode penetrating through the conductive polymer as well.











BRIEF DESCRIPTION OF THE DRAWINGS




FIG.


1


(


a


) is a perspective view of a chip PTC thermistor in accordance with a first preferred embodiment of the present invention.




FIG.


1


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the first preferred embodiment of the present invention.




FIG.


1


(


c


) is a sectional view sectioned at the


1


C—


1


C line of FIG.


1


(


a


).




FIG.


2


(


a


) is an exploded view of a PTC thermistor showing process steps for forming the chip in accordance with the first preferred embodiment of the present invention.




FIG.


2


(


b


) is an exploded view of a PTC thermistor showing process steps for forming the chip in accordance with the first preferred embodiment of the present invention.




FIG.


2


(


c


) is an exploded view of a PTC thermistor showing process steps for forming the chip in accordance with the first preferred embodiment of the present invention.




FIG.


3


(


a


) is an exploded view of a PTC thermistor showing process steps for forming the chip in accordance with the first preferred embodiment of the present invention.




FIG.


3


(


b


) is an exploded view of a PTC thermistor showing process steps for forming the chip in accordance with the first preferred embodiment of the present invention.




FIG.


3


(


c


) is an exploded view of a PTC thermistor showing process steps for forming the chip in accordance with the first preferred embodiment of the present invention.




FIG.


3


(


d


) is an exploded view of a PTC thermistor showing process steps for forming the chip in accordance with the first preferred embodiment of the present invention.





FIG. 4

is a graph showing differences in correlations between resistance and temperature measured when the first and second electrodes are provided with a cut-off section and when they are not provided with any cut-off section.




FIG.


5


(


a


) is a perspective view of another chip PTC thermistor in accordance with the first preferred embodiment of the present invention.




FIG.


5


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the first preferred embodiment of the present invention.




FIG.


5


(


c


) is a sectional view section at the


5


(


c


)—


5


(


c


) line of FIG.


5


(


a


).




FIG.


6


(


a


) is a perspective view of yet another chip PTC thermistor in accordance with the first preferred embodiment of the invention.




FIG.


6


(


b


) is a plan view of the chip PTC thermistor.




FIG.


7


(


a


) is a perspective view of a chip PTC thermistor in accordance with a second preferred embodiment of the present invention.




FIG.


7


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the second preferred embodiment of the present invention.




FIG.


7


(


c


) is a sectional view sectioned at the


7


(


c


)—


7


(


c


) line of FIG.


7


(


a


).




FIG.


8


(


a


) show manufacturing process steps for forming the chip PTC thermistor in accordance with the second embodiment of the present invention.




FIG.


8


(


b


) show manufacturing process steps for forming the chip PTC thermistor in accordance with the second preferred embodiment of the present invention.




FIG.


9


(


a


) is a perspective view of another chip PTC thermistor in accordance with the second preferred embodiment of the present invention.




FIG.


9


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the second preferred embodiment of the present invention.




FIG.


9


(


c


) is a sectional view sectioned at the


9


(


c


)—


9


(


c


) line of FIG.


9


(


a


).




FIG.


10


(


a


) is a perspective view of yet another chip PTC thermistor in accordance with the second preferred embodiment of the present invention.




FIG.


10


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the second preferred embodiment of the present invention.




FIG.


10


(


c


) is a sectional view sectioned at the


10


(


c


)—


10


(


c


) line of FIG.


10


(


a


).




FIG.


11


(


a


) is a perspective view of still another chip PTC thermistor in accordance with the second preferred embodiment of the present invention.




FIG.


11


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the second preferred embodiment of the present invention.




FIG.


11


(


c


) is a sectional view sectioned at the


11


(


c


)—


11


(


c


) line of FIG.


11


(


a


).




FIG.


12


(


a


) is a perspective view of a chip PTC thrmistor in accordance with a third preferred embodiment of the present invention.




FIG.


12


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the third preferred embodiment of the invention.




FIG.


12


(


c


) is a sectional view sectioned at the


12


(


c


)—


12


(


c


) line of FIG.


11


(


a


).




FIG.


13


(


a


) show manufacturing process for forming the chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


13


(


b


) show manufacturing process steps for forming the chip PtC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


14


(


a


) is a perspective view of another chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


14


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


14


(


c


) is a sectional view sectioned at the


14


(


c


) line of FIG.


14


(


a


).




FIG.


15


(


a


) is a perspective view of yet another chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


16


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


15


(


c


) is a sectional view sectioned at the


15


(


c


)—


15


(


c


) line of FIG.


15


(


a


).




FIG.


16


(


a


) is a perspective view of still another chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


16


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


16


(


c


) is a sectional view sectioned at the


16


(


c


)—


16


(


c


) line of FIG.


16


(


a


).




FIG.


17


(


a


) is a perspective view of still another chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


17


(


b


) is an exploded perspective view of the chip PTC thermistor in accordance with the third preferred embodiment of the present invention.




FIG.


17


(


c


) is a sectional view sectioned at the


17


(


c


)—


17


(


c


) line of FIG.


17


(


a


).




FIGS.


18


(


a


) and (


b


) are respectively a sectional view and a top view of a conventional chip PTC thermistor.




FIG.


19


(


a


) is a perspective view of a chip PTC thermistor invented prior to the present invention.




FIG.


19


(


b


) is a sectional view sectioned at the


19


(


c


)—


19


(


c


) line of FIG.


19


(


a


).




FIG.


19


(


c


) is an exploded perspective view of the same chip PTC thermistor.











DETAILED DESCRIPTION OF THE INVENTION




The First Preferred Embodiment




The chip PTC thermistor of the first preferred embodiment of the present invention is described hereinafter with reference to the accompanying drawings.




In FIGS.


1


(


a


),


1


(


b


) and


1


(


c


), a rectangular parallelepiped conductive polymer


11


having PTC properties comprises a mixture of a high density polyethylene which is a crystalline polymer, and carbon black, a conductive particle. On a first face of the conductive polymer


11


is a first main electrode


12




a.


Also on the same plane is a first sub-electrode


12




b


which is disposed separately from the first main electrode


12




a.


The same plane as used herein means that the first sub-electrode


12




b


is disposed on an extended plane of the first main electrode


12




a,


and being separate as used herein means that it is not electrically connected to the first main electrode


12




a


directly. Nonetheless, these conditions do not exclude the possibility that the main electrode


12




a


and the sub-electrode


12




b


may be electrically coupled through the conductive polymer


11


. A second main electrode


12




c


is disposed on a second face opposite the first face of the conductive polymer


11


, and a second sub-electrode


12




d


is disposed separately from and on a same plane with the second main electrode


12




c.


All the main and sub-electrodes


12




a,




12




b,




12




c,


and


12




d


comprise a metal foil such as nickel and copper.




A first side electrode


13




a


made with an exemplary nickel plating layer folds around the entire surface of one of side faces of the conductive polymer


11


and edges of the first main electrode


12




a


and the second sub-electrode


12




d


in such a manner that it electrically connects the first main electrode


12




a


and the second sub-electrode


12




d.


A second side electrode


13




b


made with a nickel plating layer folds around the entire surface of the other side face, opposite the first side face electrode


13




a,


of the conductive polymer


11


, and the edges of the second main electrode


12




c


and the first sub-electrode


12




b


in such a manner that it electrically connects the second main electrode


12




c


and the first sub-electrode


12




b.


The first and second side electrodes


13




a


and


13




b


are used as first and second electrodes for external connection.




The first and second main electrodes


12




a


and


12




c


have cut-off sections


14


. First and second protective coatings


15




a


and


15




b


comprising epoxy-acrylic resins are formed on the outermost layer of the first and second faces of the conductive polymer


11


.




The manufacturing method of the chip PTC thermistor constructed in the foregoing manner is described with reference to FIGS.


2


(


a


)-(


c


) and

FIGS. 3

(


a


)-(


d


).




Firstly, 42 wt % of high density polyethylene having a crystallinity of 70-90%, 57 wt % of carbon black made by furnace method, having an average particle diameter of 58 nm and specific surface area of 38 m


2


/g, and 1 wt % of anti-oxidant, are kneeded with a heated two-roll mill at ca 170° C. for about 20 minutes. The kneeded mixture is taken out from the roll mill in a form of sheet to obtain a conductive polymer sheet


21


with a thickness of about 0.16 mm shown in FIG.


2


(


a


). The conductive polymer


21


in

FIG. 2

will become the conductive polymer


11


when completed.




Subsequently, a pattern is formed on an approximately 80 μm thick electrolytic copper foil by a metal mold press to prepare an electrode


22


shown in FIG.


2


(


b


). The electrode


22


will become the first main electrode


12




a,


the first sub-electrode


12




b,


the second main electrode


12




c,


and the second sub-electrode


12




d


when completed. A reference numeral


23


in FIG.


2


(


b


) is equal to that of the cut-off sections


14


formed on one of or both of the first and second main electrodes


12




a


and


12




c


in the vicinity of the joints with the first and second side electrodes


13




a


and


13




b.


Grooves


24


are formed to provide space between the main and sub-electrodes so that they are separated from one another when a chip PTC thermistor is diced into independent units in the following process. Grooves


25


are formed to reduce sags and flashes of the electrolytic copper foil from occurring during dicing by reducing the cutting length of the electrolytic copper foil.




Subsequently, the conductive polymer sheet


21


is sandwiched between the electrodes


22


as shown in FIG.


2


(


c


). The laminate is heat press formed under a vacuum of 20 Torr for one minute at 175° C. and a pressure of 75 kg/cm


2


, and is integrated to form a first sheet


26


shown in FIG.


3


(


a


). The first sheet


26


is heat treated at 110-120° C. for one hour and then exposed to an electron beam irradiation of approximately 40 Mrad in an electron beam irradiator to cross-link high density polyethylene.




Then, as FIG.


3


(


b


) shows, narrow through-grooves


27


are formed at predetermined regular intervals by dicing, leaving some space between the longitudinal sides of desired chip PTC thermistors and both ends of the through-grooves


24


.




Subsequently, as FIG.


3


(


c


) shows, epoxy-acrylic, ultraviolet ray and heat curing resins are screen printed on the top and bottom faces of the first sheet


26


with the exception of the vicinity of the through-grooves


27


formed thereon. In a UV curing oven the resins are cured temporarily one face at a time, then the resins on both faces are cured at a same time in a thermosetting oven to form protective coatings


28


. Side electrodes


29


which comprise nickel plating layer of approximately 10 μm in thickness, are formed on the portions of the sheet


23


where the protective coatings are not provided and inner walls of the through grooves


24


, in a nickel sulfamate bath under a current density of 4 A/dm


2


for about 20 minutes.




The first sheet


26


with the side electrodes


29


is then diced into independent units to form chip PTC thermistors


30


shown in FIG.


3


(


d


).




The following is the description showing why the cut-off sections are formed on one of or both of the first and second main electrodes in the vicinity of a joint or joints with the first and/or second side electrodes in order to obtain adequate rate of increase in resistance of the chip PTC thermistor. The description is given based on the PTC thermistor


30


as an example.




When the PTC thermistor


30


is mounted on a circuit board as a surface mount component, and when an overcurrent is applied, the conductive polymer


11


spontaneously heats up and expands, raising its resistivity, and lowering the overcurrent to an insignificant value. In the case of the chip PTC thermistor described above, since a conductive polymer


5


is sandwiched between electrodes


6




a


and


6




c


as shown in

FIG. 19

, expansion of the conductive polymer


5


in thickness direction has some difficulty. To address this problem, the first and second main electrodes


12




a


and


12




c


are provided with the cut-off sections


14


respectively in the vicinity of the joint with the first side electrode


13




a


and the second side electrode


13




b


as shown in FIG.


1


(


b


). These cut-off sections


14


allow portions sandwiched by them to deform easily, helping the conductive polymer


11


to expand in thickness direction. As a result, the expandability of the conductive polymer can be released adequately, thereby improving the rate of increase in resistance. Therefore, a chip PTC thermistor capable of maintaining a constant power consumption, and of controlling overcurrent without suffering damage even under a high voltage, and with a high withstand voltage, can be obtained. In this embodiment, the cut-off sections


14


are provided to both main electrodes


12




a


and


12




c,


however, it can be provided only to one of main electrodes


12




a


and


12




c.






According to the manufacturing method of this embodiment, two types of samples are made: a type in which the first and second main electrodes


12




a


and


12




c


are provided with the cut-off sections


14


in the vicinity of the joints with the first side electrodes


13




a


and


13




b,


and another type without the cut-off sections


14


. To confirm the differences in the rate of increase in resistance brought about by the cut-off sections


14


, the following test is conducted.




Five samples of each of the types with and without cut-off sections


14


are mounted on printed circuit boards and kept in a constant temperature oven. The temperature of the oven is raised at the rate of 2° C./min from 25° C.-150° C. and resistances of the samples are measured at different temperatures.





FIG. 4

shows an example of the resistance/temperature characteristics of the samples with and without the cut-off section


14


. As

FIG. 4

shows, the samples with the cut-off section


14


have higher resistances than the samples without the cut-off section


14


when the temperature reaches 125° C.




In the first preferred embodiment, the first and second main electrodes


12




a


and


12




c


are provided with the cut-off sections


14


, however as shown in FIGS.


5


(


a


)-(


c


), when the cut-off sections


14


are replaced with openings


16


, the same benefits can be obtained. The cut-off section


14


or the opening


16


can be provided to one of the first and second main electrodes


12




a


and


12




c.


It is also possible to provide the cut-off section


14


on one of the main electrodes


12




a


and


12




c


in the vicinity of the joint with the first and second side electrodes


13




a


and


13




b,


and at least one opening


16


on the other main electrode.




In this embodiment, the first electrode to which the first main electrode


12




a


is connected, is the first side electrode


13




a.


The first electrode is not, however, limited to the electrode disposed over the entire side face of the conductive polymer


11


: it can be an electrode formed on part of the side faces of the conductive polymer. As shown in FIGS.


6


(


a


) and (


b


), the first electrode can be a first internal through electrode


17




a


which penetrates through inside the conductive polymer


11


such that the first main electrode


12




a


and the second sub-electrode


12




d


are connected. A second internal through-electrode


17




b


has the same construction as that of the first internal through-electrode


17




a.


In

FIGS. 6

(


a


) and (


b


), the same components as in

FIG. 1

have the same reference numerals as in FIG.


1


and their description is omitted.




The first electrode can comprise both first side electrode


13




a


and first internal through-electrode


17




a.


Likewise, the second electrode is not limited to the second side electrode


13




b.


The second internal through-electrode


17




b


shown in

FIG. 6

can be used as the second electrode. The second electrode can also comprise both second side electrode


13




b


and second internal through-electrode


17




b.






The first and second sub-electrodes


12




b


and


12




d


are not indispensable components: the chip PTC thermistor can be made without them. Expansion of the conductive polymer


11


in the thickness direction under overcurrent is not prevented, without the sub-electrodes. However, with the sub-electrodes, reliability of the chip PTC thermistor improves.




In the aforementioned examples, either the cut-off section


14


or the opening


16


is provided to the first main electrode


12




a


as the means for releasing restriction against deformation. To achieve the same purpose, parts of the first main electrode


12




a


can be made weaker than the rest of it. The same holds true with the main electrode


12




c.






The means for releasing restriction against deformation can be disposed anywhere in the first main electrode


12




a,


however, if it is disposed in an area furthest from the side electrode


13




a


which overlaps the opposing extension of the second main electrode


12




b,


a greater effect can be obtained. This can be applied to the means for releasing restriction against deformation provided to the second main electrode


12




c


in a corresponding area.




The Second Preferred Embodiment




The chip PTC thermistor of the second preferred embodiment of the present invention is described hereinafter with reference to the drawings.




In FIGS.


7


(


a


),


7


(


b


) and


7


(


c


), a rectangular parallelepiped conductive polymer


31


having PTC properties comprises a mixture of a high density polyethylene which is a crystalline polymer, and carbon black, a conductive particle. On a first face of the conductive polymer


31


is a first main electrode


32




a.


Also on the same plane is a first sub-electrode


32




b


which is disposed separately from the first main electrode


32




a.


A second main electrode


32




c


is disposed on a second face opposite the first face of the conductive polymer


31


, and a second sub-electrode


32




d


is disposed separately from, but on the same plane as the second main electrode


32




c.


All the main and sub-electrodes


32




a,




32




b,




32




c,


and


32




d


are made with metal foil such as nickel and copper.




A first side electrode


33




a


made with a nickel plating layer folds around the entire surface of one of side faces of the conductive polymer


31


and edges of the first and second main electrodes


32




a


and


32




c


in such a manner that it electrically connects the first main electrodes


32




a


and


32




c.


A second side electrode


33




b


made with a nickel plating layer folds around the entire surface of the other side which is located opposite the first side electrode


33




a


of the conductive polymer


31


, and edges of the first and second sub-electrodes


32




b


and


32




d


in such a manner that it electrically connects the first and second sub-electrodes


32




b


and


32




d.


An inner main electrode


34




a


is disposed inside the conductive polymer


31


parallel to the first and second main electrodes


32




a


and


32




c


and electrically connected to the second side electrode


33




b.


An inner sub-electrode


34




b


is disposed independently on a same plane as the inner main electrode


34




a,


and is electrically connected to the first side electrode


33




a.


These inner electrodes


34




a


and


34




b


are made with a metal foil such as copper and nickel.




The first and second main electrodes


32




a


and


32




c


have cut-off sections


35


. First and second protective coatings


36




a


and


36




a


comprising epoxy-acrylic resins are formed on the outermost layer of the first and second faces of the conductive polymer


31


.




The following is an explanation of the manufacturing method of the chip PTC thermistor provided with reference to FIGS.


8


(


a


) and


8


(


b


).




First, conductive polymer sheets


41


and electrodes


42


are produced in the same manner as the first preferred embodiment. Second, the conductive polymer sheets


41


and the electrodes


42


are placed on the top of the other alternately as shown in FIG.


8


(


a


). The laminate is then integrated by heating and pressing to form a first sheet


46


shown in FIG.


8


(


b


). The following manufacturing steps for the chip PTC thermistor of this embodiment are the same as that of the first preferred embodiment.




In order to ensure that the chip PTC thermistor achieves an adequate rate of increase in resistance, a cut-off section is provided in the vicinity of the joint with the first side electrode to at least one of the first and second main electrodes disposed on each of the faces of the conductive polymer. Necessity of the cut-off section is described below taking the foregoing PTC thermister as an example.




According to the manufacturing method of the second preferred embodiment, two types of samples are made: a type of samples in which the first and second main electrodes


32




a


and


32




c


are provided with the cut-off sections


35


in the vicinity of the joint with the first side electrode


33




a


and another type of samples without the cut-off sections


35


.




To confirm that the cut-off sections


35


provided to the predetermined positions bring about differences in the rate of increase in resistance, the same test as the first preferred embodiment is conducted as described below. Five samples of each of the aforementioned types are mounted on printed circuit boards in the same manner as the first preferred embodiment and kept in a constant temperature oven. The temperature of the oven was raised at the rate of 2° C./min from 25° C.-150° C. and resistances of the samples are measured at different temperatures. The results of the test confirms that the samples with the cut-off sections


35


have higher resistances than samples without the cut-off sections


35


when the temperature reaches 125° C.




In the second preferred embodiment, the cut-off sections


35


are provided to the joints between the first and second main electrodes


32




a


and


32




c


and the first side electrode


33




a.


However, as shown in FIGS.


9


(


a


)-(


c


), when the cut-off sections


35




a


are also provided to the vicinity of joint between the inner main electrode


34




a


and second side electrode


33




b,


even higher rate of increase in resistance can be obtained, thereby achieving higher effects.




As shown in FIGS.


10


(


a


)-(


c


), the cut-off sections


35


can be replaced with openings


37


for obtaining the same effects. As shown in FIGS.


11


(


a


)-(


c


), it is preferable to provide openings


37




a


in addition to the openings


37


, to the inner main electrode


34




a.






In the second preferred embodiment, a chip PTC thermistor with the cut-off sections


35


or the openings


37


provided on both first and second main electrodes


32




a


and


32




c


is described. However, it is also possible to provide the cut-off sections


35


to one of the first and second main electrodes


32




a


and


32




c


and more than one opening


37


to the other main electrode.




In the second preferred embodiment, the chip PTC thermistor having one inner main electrode


34




a


and one inner sub-electrode


34




b


disposed inside the conductive polymer


31


is described. This construction can be applied to chip PTC thermistors comprising 3, 5 or other odd-numbered inner main electrodes and odd-numbered inner sub-electrodes disposed inside the conductive polymer. In the case of such chip PTC thermistor, either cut-off sections or openings or both of them can be provided to the odd-numbered (more than 3) inner main electrodes depending on the needs.




In the second preferred embodiment, the chip PTC thermistor is provided with the inner sub-electrode


34




b,


however, it is not an indispensable component.




Further, the first electrode does not have to comprise an electrode disposed over the entire face of the conductive polymer


31


like the first side electrode


33




a:


it can comprise an electrode partially covering the side face, or an internal through-electrode, or a combination of the side electrode and the internal through-electrode.




The means for releasing restriction against deformation does not have to be a cut-off section or an opening. The first main electrode


12




a


can be provided with partly weaker portion than the rest of it.




In the same manner as the first preferred embodiment, a larger effect can be obtained if the means for releasing restriction against deformation disposed in the first main electrode


32




a


is also disposed in an area furthest from the side electrode


33




a


which overlaps the opposing extension of the inner main electrode


34




a.


This configuration can be applied to the second side electrode


33




b


and the inner main electrode


34




a


in a corresponding area.




The Third Preferred Embodiment




The chip PTC thermistor of the third preferred embodiment of the present invention is described hereinafter with reference to the attached drawings.




In FIGS.


12


(


a


),


12


(


b


) and


12


(


c


), a rectangular parallelepiped conductive polymer


51


having. PTC properties comprises a mixture of a high density polyethylene which is a crystalline polymer, and carbon black, a conductive particle. On a first face of the conductive polymer


51


is a first main electrode


52




a.


Also on the same face is a first sub-electrode


52




b


which is disposed separately from the first main electrode


52




a.


A second main electrode


52




c


is disposed on a second face opposite the first face of the conductive polymer


51


, and a second sub-electrode


52




d


is disposed separately on the same face as the second main electrode


52




c.


All the main and sub-electrodes


52




a,




52




b,




52




c,


and


52




d


are made with metal foil such as nickel and copper.




A first side electrode


53




a


made with a nickel plating layer folds around the entire surface of one of side faces of the conductive polymer


51


and the edges of the first main electrode


52




a


and the second sub-electrode


52




d


in such a manner that it electrically connects the first main electrode


52




a


and the second sub-electrode


52




d.


A second side electrode


53




b


made with a nickel plating layer folds around the entire surface of the other side face which is opposite the first side electrode


53




a


of the conductive polymer


51


, and the edge of the second main electrode


52




c


and the first sub-electrode


52




b


in such a manner that it electrically connects the second main electrode


52




c


and the first sub-electrode


52




b.






A first inner main electrode


54




a


is disposed inside the conductive polymer


51


parallel to the first and second main electrodes


52




a


and


52




c


and electrically connected to the second side electrode


53




b.


A first inner sub-electrode


54




b


is disposed separately on the same plane as the inner main electrode


54




a,


and is electrically connected to the first side electrode


53




a.


A second inner main electrode


54


c is disposed inside the conductive polymer


51


parallel to the first and second main electrodes


52




a


and


52




c


and electrically connected to the first side electrode


53




a.


A second inner sub-electrode


54




d


is disposed separately on the same plane as the inner main electrode


54




a,


and is electrically connected to the second side electrode


53




b.


These inner electrodes


54




a,




54




b,




54




c


and


54




d


are made with a metal foil such as copper and nickel.




The first and second main electrodes


52




a


and


52




c


have cut-off sections


55


. First and second protective coatings


56




a


and


56




a


comprising epoxy-acrylic resins are formed on the outermost layers of the first and second faces of the conductive polymer


51


.




The manufacturing method of the chip PTC thermistor constructed in the foregoing manner is described with reference to FIGS.


13


(


a


) and (


b


).




First, conductive polymer sheets


61


and electrodes


62


are produced. The conductive polymer sheet


61


is sandwiched between the electrodes


62


and heat pressed in a vacuum to form an integrated first sheet


66


as in the first preferred embodiment. Second, as shown in FIG.


13


(


a


), the conductive polymer sheets


61


and the electrodes


62


are stacked alternatively on the top and bottom of the first sheet


66


such that the electrodes


62


form outermost layers. The laminate is then heat pressed to form a second sheet


67


shown in FIG.


13


(


b


). Subsequently, by following the same manufacturing steps as those of the first preferred embodiment, a chip PTC thermistor is produced.




In order to ensure that the chip PTC thermistor achieves an adequate rate of increase in resistance, a cut-off section needs to be formed on one of or both of the first and second main electrodes in the vicinity of the joints with either one or both of the first and second side electrodes. The reason why the cut-off section is required is described below using samples prepared for comparison.




According to the manufacturing method of the third preferred embodiment, two types of samples are made: a type of samples in which the first and second main electrodes


52




a


and


52




c


are provided with the cut-off sections


55


in the vicinity of the joints with the first and second side electrodes


53




a


and


53




b


and another type of samples without the cut-off sections


55


. To confirm that the cut-off sections


55


bring about differences in the rate of increase in resistance, the same test as the first preferred embodiment is conducted as described below. Five samples of each of the aforementioned types are prepared, and are mounted on printed circuit boards and kept in a constant temperature oven. The temperature of the oven is raised at the rate of 2° C./min from 25° C.-150° C. and resistances of the samples are measured at different temperatures. The results of the test confirm that the samples with the cut-off sections


55


have higher resistances than samples without cut-off sections


55


when the temperature reaches to 125° C.




In the description of the third preferred embodiment, the cut-off sections


55


are provided to the first and second main electrodes


52




a


and


52




c


in the vicinity of the joints with the first and second side electrodes


53




a


and


53




b.


However, as shown in FIGS.


14


(


a


)-(


c


), it is preferable to provide cut-off sections


55




a


and


55




b


to the first and second inner main electrodes


54




a


and


54




c


in the vicinity of joints between them and the second side and first side electrodes


53




b


and


53




a.


As shown in FIGS.


15


(


a


)-(


c


), the cut-off sections


55


can be replaced with openings


57


for obtaining the same effects. As shown in

FIGS. 16

(


a


)-(


c


), it is preferable to provide openings


57




a


to the first and second inner main electrodes


54




a


and


54




c


in the vicinity of the joints between them and the first and second side electrodes


53




a


and


53




b.






In the description of the third preferred embodiment, either the cut-off sections


55


or the openings


57


are provided to both first and second main electrodes


52




a


and


52




c


is described. However, it is also possible to provide the cut-off sections


55


to one of the first and second main electrodes


52




a


and


52




c


and more than one opening


57


to the other main electrode.




In the third preferred embodiment, the chip PTC thermistor having two inner main electrodes


54




a


and


54




c


and two inner sub-electrodes


54




b


and


54




d


is described. However, the even-numbered (such as 4 and 6) inner main and sub-electrodes can be disposed inside the conductive polymer. In the case of the chip PTC thermistor with the even-numbered (two or more) inner main and sub-electrodes, either one of cut-off sections


55


and openings


57


or both can be provided to the inner main electrodes depending on the needs.




In the third preferred embodiment, the chip PTC thermistor is provided with the first and second inner sub-electrodes


54




b


and


54




d,


however, the present invention can be applied to a chip PTC thermistor without the first and second inner sub-electrodes


54




b


and


54




d.






The shape of the means for releasing restriction against deformation is not limited to the shapes of cut-off sections


55


and the openings


57


. The shape of cut-off sections


58




a,




58




b,




58




c


and


58




d


shown in

FIG. 17

, which are formed from one of the sides parallel to the longitudinal direction of the electrodes, can also be applicable. The cut-off sections


58




a,




58




b,




58




c


and


58




d


are means for releasing restriction against deformation respectively provided to the first and second main electrodes


52




a


and


52




c


and the first and second inner main electrodes


54




a


and


54




c.


While the cut-off sections


55


shown in

FIG. 12

are provided on both of the longitudinal sides of the layer, the cut-off sections


58




a


-


58




d


in

FIG. 17

are provided on only one of the longitudinal sides of each layer. In other words, in FIG.


12


. the first main electrode


52




a


has only a narrow part remaining in the middle where the cut-off sections


55


are provided from both of its longitudinal sides. Conversely, in the case of the cut-off section


58




a,


the first main electrode


52




a


in

FIG. 17

has one side remaining intact. Therefore, the shape of the first main electrode


52


in

FIG. 17

is more susceptible to deformation, thus is less capable of restraining the expansion of the conductive polymer


51


. Due to this, the resistance increases more sharply when an overcurrent is applied. This shape of the means for releasing restriction against deformation can be applied not only to the first main electrode


52




a


but also to the second main electrode


52




c,


the first and second inner main electrodes


54




a


and


54




c


to achieve even greater effects. This kind of shape can also be applied to the chip PTC thermistors in the first and second preferred embodiments, and similar higher effects as the third preferred embodiment can be obtained.




As shown in

FIG. 17

, the cut-off sections


58




a


-


58




d


used as the means for releasing restriction against deformation are disposed rotationally symmetrically with one another in the following manner:




the cut-off section


58




a


disposed on the first main electrode


52




a


is rotationally symmetrical to the cut-off section


58




c


disposed on the first inner electrode


54




a


adjacent to the first main electrode


52




a;






the cut-off section


58




c,


to the cut-off section


58




d


disposed on the second inner main electrode


54




c


adjacent to the first inner electrode


54




a;


and




cut-off section


58




d,


to the cut-off section


58




b.


Rotation axis, a reference point for the rotational symmetry, lies in the direction to which the first main electrode


52




a,


the conductive polymer


51


and the first inner main electrode


54




a


and the like are laminated. In other words, the rotation axis of the rotation symmetry in this case is the direction perpendicular to the plain of the first main electrode


52




a.






As described above, it is preferable to dispose the means for releasing restriction against deformation in a rotationally symmetrical manner. The reason for this is described below.




The displacement of the electrode caused by the expansion of the conductive polymer


51


and the position of the means for releasing restriction against deformation have the following relationship:




in the area of the first main electrode


52




a,


which extends from the part where the cut-off section


58




a


is provided to the tip adjacent to the first sub-electrode


52




b,


an adjacent section


59




a


adjacent to the cut-off section


58




a


suffers the least amount of deformation caused by the expansion of the conductive polymer


51


; and conversely,




a tip section


59




b


located at the edge farthermost away from the section


59




a


suffers the largest amount of deformation.




The same relationship is observed in the case of the first and second inner main electrodes


54




a


and


54




c,


and the second main electrode


52




c,


i.e. the largest deformation is observed in the adjacent sections


59




c,




59




e


and


59




g,


and least deformation, tip sections


59




d,




59




f


and


59




h.






According to the configuration shown in

FIG. 17

, the adjacent sections


59




a,




59




c,




59




e


and


59




g


and the tip sections


59




b,




59




d,




59




f,


and


59




h


are alternately placed such that they face each other via the conductive polymer


51


. This configuration allows the deformation of the chip PTC thermistor as a whole to be even, thereby improving the reliability. If the cut-off sections


58




c


and


58




b


are formed on the front side of the figure, in other words, if the first inner main electrode


54




a


and second main electrode


52




c


are inverted along the A—A line set as the line of symmetry, the conductive polymer


51


on the front side expands more easily than the conductive polymer


51


located in the back. Due to this, the level of the deformation of the chip PTC thermistor in the front side becomes larger, and in the back, smaller, making the amounts of the deformation uneven. Consequently, downward power is imposed on the first side electrode


53




a


in the front side, and in the back, upward power is imposed. As a result, the reliability of the joint between the first side electrode


53




a


and the first main electrode


52




a


is lowered.




The rotational symmetrical configuration of the means for releasing restriction against deformation described in the third preferred description can be applied to the first and second preferred embodiment for obtaining the same effects.




In the first, second and third preferred embodiments, the first main electrode


52




a,


the firs sub-electrode


52




b,


the second main electrode


52




c,


the second sub-electrode


52




d,


the first inner main electrode


54




a,


the first inner sub-electrode


54




b,


the second inner main electrode


54




c,


and the second inner sub-electrode


54




d


are made with conductive materials comprising metal foil. The present invention can also be applied to conductive materials made by sputtering, thermal spraying, and plating, conductive materials made by plating after sputtering or thermal spraying, and conductive sheets. Preferable conductive sheets include a sheet including one of metal powder, metal oxides, conductive nitrides or carbides and carbon, and a sheet including one of metal mesh, metal powder, metal oxides, conductive nitrides or carbides and carbon.




Industrial Applicability




The chip PTC thermistor of the present invention is superior in rate of increase in resistance and withstand voltage when overcurrent is applied, and highly applicable to the industry.



Claims
  • 1. A thermistor having a known breakdown voltage based on physical device characteristics, comprising:a conductive polymer substrate having a positive temperature coefficient (PTC); a first main electrode disposed along a first surface of the substrate; second main electrode disposed along a second surface of the substrate, the second surface opposing the first surface so that portions of said first and second main electrodes oppose each other, and at least one of said first and second main electrodes having first and second cut-off sections, each of said first and second cut-off sections extending from an edge of the at least one of said first and second electrodes and being spaced oppositely from each other, and each of said first and second cut-off sections do not face said opposing main electrodes.
  • 2. A thermistor having a known breakdown voltage based on physical device characteristics, comprising:a conductive polymer substrate having a positive temperature coefficient(PTC); a first main electrode disposed along a first surface of the substrate; a second main electrode disposed along a second surface of the substrate, the second surface opposing the first surface so that portions of said first and second main electrodes oppose each other, the path between the first main electrode and second main electrode defining a current path through the substrate; a first restriction joint extending along the direction of the current path for restricting deformation of the substrate; a second restriction joint opposing the first restriction joint and extending along the direction of the current path for restricting deformation of the substrate; and at least one of said first and second main electrodes having first and second cut-off sections, each of said first and second cut-off sections extending from an edge of the at least one of said first and second electrodes and being spaced oppositely from each other, and each of said first and second cut-off sections do not face said opposing main electrode.
  • 3. A thermistor having a known breakdown voltage based on physical device characteristics, comprising:a conductive polymer substrate having a positive temperature coefficient (PTC); a first main electrode disposed along a first surface of the substrate; a second main electrode disposed along a second surface of the substrate, the second surface opposing the first surface so that portions of said first and second main electrodes oppose each other, the path between the first main electrode and second main electrode defining a current path through the substrate; a first electrode disposed along the first surface and electrically connected to the first main electrode; a second electrode disposed along the second surface and electrically connected to the second main electrode; a first restriction joint extending along the current path for restricting deformation of the substrate and electrically connecting the first main electrode to the second electrode; a second restriction joint opposing the first restriction joint and extending along the circuit path for restricting deformation of the substrate and electrically connecting the second main electrode to the first electrode; and at least one of said first and second main electrodes having first and second cut-off sections, each of said first and second cut-off sections extending from an edge of the at least one of said first and second electrodes and being spaced oppositely from each other, and each of said first and second cut-off sections do not face said opposing main electrode.
Priority Claims (2)
Number Date Country Kind
11-059783 Mar 1999 JP
11-175006 Jun 1999 JP
PCT Information
Filing Document Filing Date Country Kind
PCT/JP00/01228 WO 00
Publishing Document Publishing Date Country Kind
WO00/54290 9/14/2000 WO A
US Referenced Citations (1)
Number Name Date Kind
6157289 Kojima et al. Dec 2000 A
Foreign Referenced Citations (5)
Number Date Country
6-61014 Mar 1994 JP
6-44101 Jun 1994 JP
6-208903 Jul 1994 JP
9-503097 Mar 1997 JP
9812715 Mar 1998 WO
Non-Patent Literature Citations (2)
Entry
Japanese search report for PCT/JP00/01228 dated Jun. 6, 2000.
English translation of Form PCT/ISA/210, Jun. 6, 2000.