Polymer mixtures for printed polymer electronic circuits

Information

  • Patent Grant
  • 7678857
  • Patent Number
    7,678,857
  • Date Filed
    Tuesday, August 31, 2004
    22 years ago
  • Date Issued
    Tuesday, March 16, 2010
    16 years ago
Abstract
In order to increase the viscosity of semiconductive polymers in solution, they are mixed with non-semiconductive polymers.
Description

Plastics (polymers) are known as insulators. However, there are also some remarkable polymers having conductive and even semiconductive properties. All three properties taken together permit the production of fully functioning integrated circuits from polymers. The attraction of polymer electronics lies in its simple producability because the polymers can be deposited from the solution to give layers. This means that in particular it is possible to use inexpensive printing techniques by means of which the individual structured layers of integrated circuits can be produced. However, every printing process sets specific requirements with regard to the substances to be printed, in this case the polymer solutions. It is rare that the properties of the polymer solutions comply with the printing requirements from the outset. Thus, for example, the viscosity of the polymer solutions is considerably too low for most printing processes. This applies in particular to polymeric semiconductor material.


An inkjet technique for printing low-viscosity semiconductor material is known from Nalwa H. S. (editor): “Organic Conductive Molecules and Polymers”, volume 2, 1997, pages 334 to 335). Inkjet printing is, however, least favored for mass production.


Starting from this, it is the object of the invention to make semiconductive polymers accessible to standard printing processes.


This object is achieved by the inventions stated in the independent claims. Advantageous developments are evident from the dependent claims.


Accordingly, a polymer mixture, in particular a polymer solution, contains one or more semiconductive polymers and one or more non-semiconductive, i.e. insulating and/or conductive polymers.


Polythiophene, in particular poly(3-hexylthiophene) (P3HT), has proven particularly advantageous as a semiconductive polymer. However, the use of polyfluorene or polythienylenevinylene and a mixture of two or three of said semiconductive polymers is also possible.


Polystyrene (PS), polymethyl methacrylate (PMMA), cymel and polyisobutyl (PIB) or mixtures thereof have proven particularly suitable as non-semiconductive polymers.


In order to obtain a polymer solution, solvents may also be present in the polymer mixture, in particular chloroform, toluene, ketones, dioxane and/or heptane.


In addition, the polymer mixture may contain conductive polymers, oligomers, conductive molecules and/or semiconductive molecules (monomers, “small molecules”, in particular pentacene and/or C60), particles and other materials which cannot be dissolved, or may consist of a selection of said substances and possibly customary additives.


By said mixing of semiconductive and non-semiconductive polymers, it is possible to establish the desired viscosity of the polymer solution. Preferably, a viscosity of more than 8 mPa·s is established, in particular more than 80 mPa·s. As a result, the polymer solution is suitable for screen printing or pad printing and further standard printing processes.


A polymer mixture of the type described can preferably be used in a printing process, in particular in a screen printing, flexographic printing, offset printing, gravure printing and/or pad printing process.


By means of a polymer mixture of the type described, it is possible to produce a double layer which contains one or more semiconductive polymers in its first layer and one or more non-semiconductive polymers in its second layer.


This can be effected, for example, in a process for the production of the double layer in which a polymer mixture of the type described is used, which polymer mixture separates on deposition from the solution and thus forms the double layer.


A printed electronic circuit can be produced using a polymer mixture of the type described, it being possible to create semiconductive polymer structures by screen printing and/or pad printing during the production. Alternatively or in addition, the polymer mixture can also be used generally for the production of electrical components, for example for organic transistors, diodes, capacitors, resistors, light emitting diodes, photovoltaic cells, photodetectors, display elements, etc.


Preferred developments of the printing process, of the double layer, of the process for the production of the double layer and of the electronic circuit arise from the preferred developments of the polymer mixture, and vice versa.





Further advantages and features of the invention are evident from the description of working examples with reference to the drawing.



FIG. 1 shows the characteristic of an organic field effect transistor having a semiconductive layer which consists purely of semiconductive polymer;



FIG. 2 shows the characteristic of an organic field effect transistor having a semiconductive layer which consists of non-semiconductive polymer and semiconductive polymer in the weight ratio 1:3;



FIG. 3 shows the characteristic of an organic field effect transistor having a semiconductive layer which consists of non-semiconductive and semiconductive polymer in the weight ratio 1:1.





It is proposed to mix the functional, i.e. semiconductive polymers with other polymers in order in this manner to achieve an adaptation to a wide range of printing requirements. The mixing of polymers (polymer blends) is a customary method for obtaining certain combinations of properties. However, in the case of the semiconductor polymers, such mixtures have not yet been considered. If such a mixture were to be considered theoretically, virtually complete disappearance of the semiconductive properties would be expected for semiconductor polymers as a result of addition of other materials. However, our own experiments show that this is not the case.


Polythiophene, as a semiconductive polymer, was mixed with polystyrene and polymethyl methacrylate. It is found that the semiconductor function is retained in the mixed polymer system too. At the same time, the corresponding polymer solution has an increased viscosity, which makes it more readily printable.


The reason why the semiconductive properties are so well retained is not exactly known, but two arguments appear possible. Firstly, polyaniline is a conductive polymer. Like polythiophene, it belongs to the class of the conjugated polymers. In polymer mixtures, it retains its conductive function to a high degree, as described in Speakman S. P. et al.: “Organic Electronics 2 (2)”, 2001, pages 65 to 73. What is true here for polyaniline may apparently also be applied to polythiophene. Secondly, it is a known phenomenon that polymer mixtures tend to separate after deposition from solution. This is described, for example, in Garbassi F. et al.: “Polymer Surfaces”, 1998, pages 289 to 300. The polymer system minimizes its total energy by virtue of the fact that the material having the lower surface energy forms the uppermost layer.


In our case, two layers form, the first of which substantially comprises the admixed polymer (PS or PMMA). The second layer is a virtually pure polythiophene layer. It imparts the semiconductor property to the system. What has been demonstrated here for polythiophene by way of example is also possible with other semiconductive polymers, for example polyfluorene and polythienylenevinylene.



FIGS. 1 to 3 show the characteristics of three organic field effect transistors (OFETs) having different mass ratios of polystyrene (PS) and poly(3-hexylthiophene) (P3HT) in the semiconductive layer. In FIG. 1, the ratio of PS to P3HT is 0:100, in FIG. 2 the ratio of PS to P3HT is 25:75 and in FIG. 3 the ratio of PS to P3HT is 50:50. The layer thicknesses are unchanged for better comparison.


The OFETs comprising PS and P3HT, whose, characteristics are shown in FIGS. 2 and 3, function just as well as the OFET comprising P3HT, whose characteristics are shown in FIG. 1, except that the current decreases with increasing proportion of PS. Since, however, the OFF current decreases more sharply than the ON current, the transistor characteristic of the ON/OFF ratio even improves.


A further tested working example is the system P3HT and polyisobutyl (PIB). At maximum solubility of 2.5% of polymer solid in chloroform, P3HT has a viscosity of 2 mPa·s. By adding PIB dissolved in heptane the viscosity can be increased to values up to 100 mPa·s, depending on the mixing ratio. This meets the requirements of screen printing, in which the viscosity must be greater than or equal to 10 mPa·s, and of pad printing, in which the viscosity must be greater than or equal to 100 mPa·s. In experiments, operable OFETs have also been produced with this semiconductor mixture.


By means of the invention, the properties of different polymers are combined with one another. For example, polythiophene contributes the semiconductive property and polystyrene the higher viscosity in the polymer solution. Polythiophene alone in solution would not be readily printable owing to the excessively low viscosity, whereas the addition of polystyrene imparts higher viscosity to the solution, which makes it more readily printable. Further advantages are to be seen for the case of the abovementioned separation. They relate to the solid double layer, for example of insulator and semiconductor, remaining behind after evaporation of the solvent. Specifically, the advantages are as follows:

    • saving of an operation by simultaneous production of the two layers,
    • production of an extremely thin semiconductor layer, which is not possible by direct printing of only the semiconductor solution,
    • perfect bonding (adhesion) of the two layers to one another,
    • the layers rest on one another in exact register, particularly in printed structures (self-alignment),
    • the solvent compatibility does not play a role, i.e. there is no partial dissolution of the lower layer on application of the upper layer,
    • it is to be expected that the special method of layer formation by separation has a positive influence on the layer quality, for example with regard to low defect density and high structural order of the (conjugated) polymers.

Claims
  • 1. A printable polymer mixture for the preparation of a double layer comprising a semiconductor layer and a non-semiconductive layer wherein the mixture exhibits semiconductive properties, the mixture comprising: one or more semiconductive polymers; andone or more non-semiconductive polymers,in a solution comprising a non-electrolytic solvent to form said printable mixture and said double layer.
  • 2. The polymer mixture as claimed in claim 1 wherein the semiconductive polymers include at least one of the group consisting of polythiophene, polyfluorene or polythienylenevinylene.
  • 3. The polymer mixture as claimed in claim 1 wherein the non-semiconductive polymers are selected from the group consisting of at least one of polystyrene, polymethyl methacrylate, cymel or poly isobutyl.
  • 4. The polymer mixture as claimed in claim 1 wherein said solvent includes at least one of chloroform, toluene, ketones, dioxane or heptane.
  • 5. The polymer mixture as claimed in claim 1 wherein the mixture it additionally contains molecules which are smaller than polymers, in particular oligomers, conductive molecules or semiconductive molecules.
  • 6. The polymer mixture as claimed in claim 1 wherein the mixture further includes additives.
  • 7. The polymer mixture as claimed in claim 1 wherein the mixture has a viscosity of more than 8 mpa·s.
  • 8. A printing process for the production of a semiconductive double layer by a known process, selected from the group consisting of at least one of screen printing, flexographic printing, offset printing, gravure printing and/or pad printing process, the polymer mixture as claimed in claim 1 being used as a print medium in the known process.
  • 9. A printing process for the production of a semiconductive double layer by a known process, selected from the group consisting of screen printing, flexographic printing, offset printing, gravure printing and/or pad printing process, the double layer produced by printing a printing medium comprising the polymer mixture of claim 1 for forming the one or more semiconductive polymers in a first of its layers, andthe one or more non-semiconductive polymers in a second of its layers.
  • 10. An electronic component which is produced using a polymer mixture as claimed in claim 1.
  • 11. An electronic component which is produced using a polymer mixture that forms a double layer as claimed in claim 9.
  • 12. An electronic component which is produced using a polymer mixture as claimed in claim 2.
  • 13. An electronic component which is produced using a polymer mixture as claimed in claim 3.
  • 14. An electronic component which is produced using a polymer mixture as claimed in claim 4.
  • 15. An electronic component which is produced using a polymer mixture as claimed in claim 5.
  • 16. An electronic component which is produced using a polymer mixture as claimed in claim 6.
  • 17. An electronic component which is produced using a polymer mixture as claimed in claim 7.
  • 18. A printing process for the production of a semiconductive double layer by a known process, selected from the group consisting of screen printing, flexographic printing, offset printing, gravure printing and/or pad printing process, the double layer produced by printing a printing medium comprising the polymer mixture of claim 2 for forming the one or more semiconductive polymers in a first of its layers, andthe one or more non-semiconductive polymers in a second of its layers.
  • 19. A printing process for the production of a semiconductive double layer by a known process, selected from the group consisting of screen printing, flexographic printing, offset printing, gravure printing and/or pad printing process, the double layer produced by printing a printing medium comprising the polymer mixture of claim 3 for forming the one or more semiconductive polymers in a first of its layers, andthe one or more non-semiconductive polymers in a second of its layers.
  • 20. An electronic component comprising: a substrate; and on the substrate:a polymer mixture, the polymer mixture comprising first and second materials having respective semiconductive and non-semiconductive properties, the mixture comprising: one or more semiconductive polymers, andone or more non-semiconductive polymers,wherein the semiconductive and non-semiconductive polymers separate from one another after deposition on the substrate forming separate and discrete semiconductor and non-semiconductor layers on the substrate.
Priority Claims (1)
Number Date Country Kind
103 40 643 Sep 2003 DE national
PCT Information
Filing Document Filing Date Country Kind 371c Date
PCT/DE2004/001930 8/31/2004 WO 00 2/22/2006
Publishing Document Publishing Date Country Kind
WO2005/024895 3/17/2005 WO A
US Referenced Citations (103)
Number Name Date Kind
3512052 MacIver et al. Dec 1970 A
3769096 Ashkin Oct 1973 A
3955098 Kawamoto May 1976 A
3999122 Winstel et al. Dec 1976 A
4246298 Guamery Jan 1981 A
4302648 Sado et al. Nov 1981 A
4340057 Bloch Jul 1982 A
4442019 Marks Apr 1984 A
4554229 Small Nov 1985 A
4865197 Craig Sep 1989 A
4926052 Hatayama May 1990 A
4937119 Nickles et al. Jun 1990 A
5075816 Stormbom Dec 1991 A
5173835 Cornett et al. Dec 1992 A
5206525 Yamamoto et al. Apr 1993 A
5259926 Kuwabara et al. Nov 1993 A
5321240 Takihira Jun 1994 A
5347144 Garnier et al. Sep 1994 A
5364735 Akamatsu Nov 1994 A
5395504 Hoffman et al. Mar 1995 A
5480839 Ezawa et al. Jan 1996 A
5486851 Gehner et al. Jan 1996 A
5502396 Desarzens Mar 1996 A
5569879 Gloton Oct 1996 A
5574291 Dodabalapur et al. Nov 1996 A
5578513 Maegawa Nov 1996 A
5580794 Allen Dec 1996 A
5625199 Baumbach et al. Apr 1997 A
5629530 Brown et al. May 1997 A
5630986 Charlton May 1997 A
5652645 Jain Jul 1997 A
5691089 Smayling Nov 1997 A
5693956 Shi Dec 1997 A
5705826 Aratani et al. Jan 1998 A
5729428 Sakata et al. Mar 1998 A
5854139 Kondo et al. Dec 1998 A
5869972 Birch et al. Feb 1999 A
5883397 Isoda et al. Mar 1999 A
5892244 Tanaka et al. Apr 1999 A
5546889 Wakita et al. Aug 1999 A
5946551 Dimitrakopoulos Aug 1999 A
5967048 Fromson et al. Oct 1999 A
5970318 Choi et al. Oct 1999 A
5973598 Beigel Oct 1999 A
5994773 Hirakawa Oct 1999 A
6335539 Dimitrakopoulos et al. Oct 1999 B1
5997817 Crismore et al. Dec 1999 A
5998805 Shi et al. Dec 1999 A
6036919 Thym et al. Mar 2000 A
6045977 Chandross et al. Apr 2000 A
6060338 Tanaka et al. May 2000 A
6072716 Jacobsen et al. Jun 2000 A
6083104 Choi Jul 2000 A
6087196 Sturm et al. Jul 2000 A
6133835 DeLeeuw et al. Oct 2000 A
6150668 Bao Nov 2000 A
6180956 Chondroudis Jan 2001 B1
6197663 Chandross Mar 2001 B1
6207472 Calligari et al. Mar 2001 B1
6215130 Dodabalapur Apr 2001 B1
6221553 Wolk Apr 2001 B1
6251513 Rector Jun 2001 B1
6284562 Batlogg et al. Sep 2001 B1
6300141 Segal et al. Oct 2001 B1
6321571 Themont et al. Nov 2001 B1
6322736 Bao Nov 2001 B1
6329226 Jones Dec 2001 B1
6330464 Colvin Dec 2001 B1
6340822 Brown et al. Jan 2002 B1
6344662 Dimitrakopoulos et al. Feb 2002 B1
6362509 Hart Mar 2002 B1
6384804 Dodabalapur et al. May 2002 B1
6403396 Gudesen et al. Jun 2002 B1
6429450 Mutsaers et al. Aug 2002 B1
6498114 Amundson et al. Dec 2002 B1
6518949 Drazic Feb 2003 B2
6521109 Bartic et al. Feb 2003 B1
6548875 Nishiyama Apr 2003 B2
6555840 Hudson Apr 2003 B1
6593690 McCormick Jul 2003 B1
6603139 Tessler Aug 2003 B1
6621098 Jackson Sep 2003 B1
6517955 Jacobsen et al. Feb 2005 B1
6852583 Bernds et al. Feb 2005 B2
6903958 Bernds et al. Jun 2005 B2
6960489 Bernds et al. Nov 2005 B2
20020018911 Bernius et al. Feb 2002 A1
20020022284 Heeger Feb 2002 A1
20020025391 Angelopoulos Feb 2002 A1
20020053320 Duthaler May 2002 A1
20020056839 Joo et al. May 2002 A1
20020068392 Lee et al. Jun 2002 A1
20020130042 Stiene Sep 2002 A1
20020170897 Hall Nov 2002 A1
20020195644 Dodabalapur et al. Dec 2002 A1
20030059987 Sirringhaus et al. Mar 2003 A1
20030112576 Brewer et al. Jun 2003 A1
20040002176 Xu Jan 2004 A1
20040013982 Jacobson et al. Jan 2004 A1
20040026689 Bernds et al. Feb 2004 A1
20040084670 Tripsas et al. May 2004 A1
20040211329 Funahata et al. Oct 2004 A1
20050196969 Gunner et al. Sep 2005 A1
Foreign Referenced Citations (154)
Number Date Country
33 38 597 May 1985 DE
692 32 740 Apr 1993 DE
424 38 32 Jun 1994 DE
198 52 312 May 1999 DE
198 16 860 Nov 1999 DE
199 18 193 Nov 1999 DE
198 51 703 May 2000 DE
100 06 257 Sep 2000 DE
199 21 024 Nov 2000 DE
199 33 757 Jan 2001 DE
695 19 782 Jan 2001 DE
199 35 527 Feb 2001 DE
199 37 262 Mar 2001 DE
100 12 204 Sep 2001 DE
100 33 112 Jan 2002 DE
100 43 204 Apr 2002 DE
100 45 192 Apr 2002 DE
100 47 171 Apr 2002 DE
100 58 559 May 2002 DE
100 61 297 Jun 2002 DE
101 17 663 Oct 2002 DE
101 20 687 Oct 2002 DE
101 20 686 Nov 2002 DE
102 19 905 Dec 2003 DE
0 108 650 May 1984 EP
0 128 529 Dec 1984 EP
0 268 370 May 1988 EP
0 268 370 May 1988 EP
0 350 179 Jan 1990 EP
0 418 504 Mar 1991 EP
0 442 123 Aug 1991 EP
0 460 242 Dec 1991 EP
0 501 456 Sep 1992 EP
0 501 456 Sep 1992 EP
0 511 807 Nov 1992 EP
0 528 662 Feb 1993 EP
0 603 939 Jun 1994 EP
0 685 985 Dec 1995 EP
0 716 458 Jun 1996 EP
0 785 578 Jul 1997 EP
0 785 578 Jul 1997 EP
0 786 820 Jul 1997 EP
0 615 256 Sep 1998 EP
0 690 457 Dec 1999 EP
0 962 984 Dec 1999 EP
0 966 182 Dec 1999 EP
0966 182 Dec 1999 EP
0 979 715 Feb 2000 EP
0 981 165 Feb 2000 EP
0 989 614 Mar 2000 EP
1 048 912 Nov 2000 EP
1 052 594 Nov 2000 EP
1 065 725 Jan 2001 EP
1 065 725 Jan 2001 EP
1 083 775 Mar 2001 EP
1 102 335 May 2001 EP
1 103 916 May 2001 EP
1 104 035 May 2001 EP
1 113 502 Jul 2001 EP
1 134 694 Sep 2001 EP
1 224 999 Jul 2002 EP
1 237 207 Sep 2002 EP
1 318 084 Jun 2003 EP
2793089 Nov 2000 FR
723598 Feb 1955 GB
2 058 462 Apr 1981 GB
2001P20024 Aug 2000 GR
2001P03239 Jan 2001 GR
54069392 Jun 1979 JP
60117769 Jun 1985 JP
61001060 Jan 1986 JP
61167854 Jul 1986 JP
62065472 Mar 1987 JP
362065477 Mar 1987 JP
01169942 Jul 1989 JP
2969184 Dec 1991 JP
03290976 Dec 1991 JP
05259434 Oct 1993 JP
05347422 Dec 1993 JP
08197788 Aug 1995 JP
09083040 Mar 1997 JP
09320760 Dec 1997 JP
10026934 Jan 1998 JP
2001085272 Mar 2001 JP
2006013492 Jan 2006 JP
WO 9316491 Aug 1993 WO
WO 9417556 Aug 1994 WO
WO 9506240 Mar 1995 WO
WO 9531831 Nov 1995 WO
WO 9602924 Feb 1996 WO
WO 9619792 Jun 1996 WO
WO 9712349 Apr 1997 WO
WO 9718944 May 1997 WO
WO 9818156 Apr 1998 WO
WO 9818186 Apr 1998 WO
WO 9840930 Sep 1998 WO
WO 9907189 Feb 1999 WO
WO 9910929 Mar 1999 WO
WO 9910939 Mar 1999 WO
WO 9921233 Apr 1999 WO
WO 9930432 Jun 1999 WO
WO 9939373 Aug 1999 WO
WO 9940631 Aug 1999 WO
WO 9953371 Oct 1999 WO
WO 9954936 Oct 1999 WO
WO 9966540 Dec 1999 WO
WO 0033063 Jun 2000 WO
WO 0036666 Jun 2000 WO
WO 0079617 Dec 2000 WO
WO 0103126 Jan 2001 WO
WO 0106442 Jan 2001 WO
WO 0108241 Feb 2001 WO
WO 0115233 Mar 2001 WO
WO 0117029 Mar 2001 WO
WO 0117041 Mar 2001 WO
WO 0127998 Apr 2001 WO
WO 0146987 Jun 2001 WO
WO 0147044 Jun 2001 WO
WO 0147044 Jun 2001 WO
WO 0147045 Jun 2001 WO
WO 0173109 Oct 2001 WO
WO 0173109 Oct 2001 WO
WO 0205360 Jan 2002 WO
WO 0205361 Jan 2002 WO
WO 0215264 Feb 2002 WO
WO 0219443 Mar 2002 WO
WO 0229912 Apr 2002 WO
WO 0243071 May 2002 WO
WO 0247183 Jun 2002 WO
WO 02065557 Aug 2002 WO
WO 02071139 Sep 2002 WO
WO 02071505 Sep 2002 WO
WO 02076924 Oct 2002 WO
WO 02091495 Nov 2002 WO
WO 02091495 Nov 2002 WO
WO 02095805 Nov 2002 WO
WO 02095805 Nov 2002 WO
WO 02099907 Dec 2002 WO
WO 02099908 Dec 2002 WO
WO 03036686 May 2003 WO
WO 03046922 Jun 2003 WO
WO 03067680 Aug 2003 WO
WO 03069552 Aug 2003 WO
WO 03081671 Oct 2003 WO
WO 03095175 Nov 2003 WO
WO 2004032257 Apr 2004 WO
WO 2004042837 May 2004 WO
WO 2004042837 May 2004 WO
WO 2004042837 May 2004 WO
WO 2004007194 Jun 2004 WO
WO 2004007194 Jun 2004 WO
WO 2004047144 Jun 2004 WO
WO 2004047144 Jun 2004 WO
WO 2004083859 Sep 2004 WO
Related Publications (1)
Number Date Country
20070017401 A1 Jan 2007 US