Polysilicon-base self-aligned bipolar transistor process and structure

Abstract

A bipolar transistor isolated by deep recessed oxide 19, with shallow recessed oxide 15 separating the base 32, 37 from collector contact 35, with polysilicon contact 26 to base extrinsic region 37, the polysilicon being self-aligned with the emitter 36 and the emitter contact.

Description

Continuations (1)

	Number	Date	Country
Parent	133155	Mar 1980