Information
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Patent Grant
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T104102
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Patent Number
T104,102
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Date Filed
Thursday, April 22, 198242 years ago
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Date Issued
Tuesday, April 3, 198440 years ago
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US Classifications
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International Classifications
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Abstract
A bipolar transistor isolated by deep recessed oxide 19, with shallow recessed oxide 15 separating the base 32, 37 from collector contact 35, with polysilicon contact 26 to base extrinsic region 37, the polysilicon being self-aligned with the emitter 36 and the emitter contact.
Continuations (1)
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Number |
Date |
Country |
Parent |
133155 |
Mar 1980 |
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