Claims
- 1. A composition, comprising:
a) a cast polymer comprising pores; and b) a wafer adhered to said polymer.
- 2. The composition of claim 1, further comprising a metal mask defined on a top portion of said polymer, wherein the unmasked top portion of said polymer is etched.
- 3. The composition of claim 1, wherein said pore sizes are within the range of 1 nm and 1 μm.
- 4. The composition of claim 1, wherein said pores are of a size such that fluid can flow through the polymer.
- 5. The composition of claim 1, wherein said polymer is poly(butyl methacrylate-co-ethylene diamethacrylate-co-2-acryloamide-2-methyl-1-propanesulfonic acid.
- 6. The composition of claim 1, wherein said wafer comprises silicon or glass.
- 7. The composition of claim 1, wherein said wafer is etched.
- 8. The composition of claim 1, wherein said metal mask comprises chromium and aluminum.
- 9. A method, comprising:
a) providing:
i) a monomer solution; ii) a casting mold; iii) a heat source; iv) an adhesion promoter, and v) a wafer; b) coating said casting mold with said adhesion promoter to create a coated mold; c) pouring said monomer solution into said coated mold; e) placing said wafer on said monomer solution in said coated mold to create an enclosed mold; f) heating said enclosed mold with said heat source until said monomer solution polymerizes, so as to create a porous polymer.
- 10. The method of claim 9, further comprising coating a portion of said porous polymer with a metal mask so as to create a masked and unmasked portion.
- 11. The method of claim 10, further comprising etching said unmasked portion of said porous polymer, so as to create a patterned porous polymer structure.
- 12. The method of claim 9, wherein said monomer solution comprises at least two monomers and a solvent.
- 13. The method of claim 12, wherein said monomer solution comprises 1-propanol and buteniol.
- 14. The method of claim 13, wherein said 1-propanol ranges between 70% and 85%.
- 15. The method of claim 9, wherein said casting mold comprises silicon.
- 16. The method of claim 9, wherein said adhesion promoter is gamma-methacryloxytropyl trimethoxy saline.
- 17. The method of claim 9, wherein said wafer comprises silicon or glass.
- 18. The method of claim 9, wherein said wafer is etched.
- 19. The method of claim 10, wherein said metal mask comprises chromium and aluminum.
- 20. A method, comprising:
a) depositing an insulation layer onto a substrate; b) creating an electrode pattern on said insulation layer; and c) placing a porous polymer structure within said electrode pattern.
- 21. The method of claim 20, further comprising layering a photoresist layer over said patterned porous polymer structure and said insulation layer, thus forming a patterned porous plug mask.
- 22. The method of claim 21, further comprising removing said photoresist layer from a small section on top of the patterned porous plug mask.
- 23. The method of claim 22, further comprising depositing a parylene-C layer over said pattern porous plug mask.
- 24. The method of claim 23, further comprising etching said photoresist layer thus forming channel walls, electrode openings, escape hole, reservoir openings and channel exit openings, wherein a porous plug electro-osmotic pump is formed.
- 25. The-method of claim 20, wherein said substrate comprises silicon.
- 26. The method of claim 20, wherein said insulation layer comprises parylene C.
- 27. The method of claim 20, wherein said parylene C layer is preferably 5 μm thick.
- 28. The method of claim 20, wherein said electrode pattern comprises gold.
- 29. The method of claim 20, wherein said channel walls are with the channel necked down to either 50 μm or 20 μm.
- 30. An apparatus, comprising;
a) a substrate having an insulation layer; b) an electrode pattern layered on said insulation layer; c) a porous plug contacting said electrode pattern, wherein said plug comprises pores of a size allowing fluid flow through said plug.
- 31. The apparatus of claim 30, further comprising a channel wall attached to said porous plug and said insulation layer thereby defining an upstream portion and a downstream portion.
- 32. The apparatus of claim 31, wherein said upstream portion comprises a reservoir opening and escape hole in said upstream portion.
- 33. The apparatus of claim 32, wherein said downstream portion has a channel exit hole.
- 34. The apparatus of claim 30, wherein said substrate comprises silicon.
- 35. The apparatus of claim 30, wherein said insulation layer comprises parylene-C.
- 36. The method of claim 35, wherein said parylene C layer is preferably 5 μm thick.
- 37. The apparatus of claim 30, wherein said porous plug comprises 1-propanol and buteniol.
- 38. The apparatus of claim 30, wherein said pores have a size within the range of 1 μm and 1 nm.
- 39. The apparatus of claim 30, wherein said electrode pattern comprises gold.
- 40. The apparatus of claim 30, wherein said channel walls are with the channel necked down to either 50 μm or 20 μm.
- 41. A method, comprising:
a) providing;
i) an apparatus, comprising;
a) a substrate having an insulation layer, b) an electrode pattern layered on said insulation layer, c) a porous plug contacting said electrode pattern, wherein said plug comprises pores of a size allowing fluid flow through said plug, d) a channel wall attached to said porous plug so as to define first and second sides of a channel, and e) a reservoir on said first side of said channel; ii) an alternating current power source having a frequency within the range of 0.1 and 10 Hz, wherein said alternating current power source is connected to said electrode pattern; and iii) a dielectric liquid; c) filling said reservoir with said dielectric liquid; and d) applying an electricalal potential across said electrode pattern using said alternating current power source whereby at least some of said dielectric liquid flows through said porous plug to said second side of said channel.
- 42. The method of claim 41, wherein said substrate comprises silicon.
- 43. The method of claim 41, wherein said insulation layer comprises parylene-C.
- 44. The method of claim 43, wherein said parylene C layer is preferably 5 μm thick.
- 45. The method of claim 41, wherein said pattern porous plug comprises 1-propanol and buteniol.
- 46. The method of claim 41, wherein said pores range have sizes within the range of 1 μm and 1 nm.
- 47. The method of claim 41, wherein said electrode pattern comprises gold.
- 48. The method of claim 41, further comprising a direct current power source operably connected to said electrode pattern.
- 49. The method of claim 48, wherein said electrode pattern is protected by a layer of dielectric thereby preventing contact with said liquid.
- 50. The method of claim 41, wherein said alternating current power source operates within a voltage range of 0.1-50 V.
- 51. The method of claim 41, wherein said alternating current power source operates at a preferred duty cycle of 30%.
- 52. The method of claim 41, wherein said channel walls are with the channel necked down to either 50 μm or 20 μm.
- 53. A method for moving microdroplets, comprising:
a) providing a liquid microdroplet disposed within a microdroplet transport channel etched in silicon, said channel in liquid communication with a reaction region via said transport channel and separated from a microdroplet flow-directing means by a liquid barrier, wherein said microdroplet passes through a porous polymer; and b) conveying said microdroplet in said transport channel to said reaction region via said microdroplet flow-directing means.
- 54. The method of claim 53, wherein said flow-directing means comprises a series of aluminum heating elements arrayed along said transport channel and the microdroplets are conveyed by differential heating of the microdroplet by the heating elements.
STATEMENT OF GOVERNMENT RESEARCH SUPPORT
[0001] The U.S. government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of grant number F30602-00-1-0571 awarded by DARPA.
Provisional Applications (1)
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Number |
Date |
Country |
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60349529 |
Jan 2002 |
US |