A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
Description
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
FIGS. 1A to 1C are cross-sectional views each illustrating a step in the manufacturing method of a semiconductor device according to one embodiment of the present invention.
Claims
1. A post-CMP treating liquid comprising:
water;resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, the resin particles being incorporated at a concentration ranging from 0.01 to 1 wt %;a first surfactant having carboxylic group;a second surfactant having sulfonyl group; andtetramethyl ammonium hydroxide;the treating liquid having a pH ranging from 4 to 9 and exhibiting a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
2. The post-CMP treating liquid according to claim 1, wherein the resin particles comprise at least one selected from the group consisting of poly(methyl methacrylate), polystyrene, polyethylene, polyethylene glycol, polyvinyl acetate, polybutadiene, polyisobutylene, polypropylene and polyoxymethylene.
3. The post-CMP treating liquid according to claim 1, wherein the primary particle diameter of the resin particles is ranging from 30 to 50 nm.
4. The post-CMP treating liquid according to claim 1, wherein the resin particles are incorporated at a concentration ranging from 0.05 to 0.1 wt %.
5. The post-CMP treating liquid according to claim 1, wherein the first surfactant is selected from the group consisting of polyacrylic acid, polyacrylate, polymethacrylic acid, polymethacrylate, acrylic acid-methacrylic acid and acrylic acid-methacrylate.
6. The post-CMP treating liquid according to claim 1, wherein the first surfactant has a weight average molecular weight ranging from 2000 to 20000.
7. The post-CMP treating liquid according to claim 1, wherein the first surfactant is incorporated at an amount ranging from 0.01 to 1 wt % based on a total weight of the treating liquid.
8. The post-CMP treating liquid according to claim 1, wherein the second surfactant is selected from the group consisting of hexyl benzene sulfonate, octyl benzene sulfonate, dodecyl benzene sulfonate, tetradecyl benzene sulfonate, hexadecyl benzene sulfonate and octadecyl benzene sulfonate.
9. The post-CMP treating liquid according to claim 1, wherein the second surfactant is incorporated at an amount ranging from 0.01 to 1 wt % based on a total weight of the treating liquid.
10. The post-CMP treating liquid according to claim 1, further comprising a reducing agent.
11. The post-CMP treating liquid according to claim 10, wherein the reducing agent is incorporated at an amount ranging from 0.01 to 1 wt % based on a total weight of the treating liquid.
12. A method for manufacturing a semiconductor device comprising:
depositing a conductive material above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a conductive film;polishing the conductive film to expose a surface of the insulating film while burying the conductive material in the recess, thereby forming a buried wiring layer; andtreating a surface of the buried wiring layer and the surface of the insulating film using a treating liquid without substantially polishing these surfaces, the treating liquid comprising water; resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, the resin particles being incorporated at a concentration ranging from 0.01 to 1 wt %; a first surfactant having carboxylic group; a second surfactant having sulfonyl group; and tetramethyl ammonium hydroxide; the treating liquid having a pH ranging from 4 to 9.
13. The method according to claim 12, wherein the insulating film is formed of an insulating material selected from the group consisting of SiC, SiCH, SiCN, SiOC, SiN and SiOCH.
14. The method according to claim 12, wherein the conductive film comprises a barrier metal film and a Cu film.
15. The method according to claim 12, wherein the resin particles in the treating liquid are formed of at least one selected from the group consisting of poly(methyl methacrylate), polystyrene, polyethylene, polyethylene glycol, polyvinyl acetate, polybutadiene, polyisobutylene, polypropylene and polyoxymethylene.
16. The method according to claim 12, wherein the first surfactant in the treating liquid is selected from the group consisting of polyacrylic acid, polyacrylate, polymethacrylic acid, polymethacrylate, acrylic acid-methacrylic acid and acrylic acid-methacrylate.
17. The method according to claim 12, wherein the first surfactant in the treating liquid has a weight average molecular weight ranging from 2000 to 20000.
18. The method according to claim 12, wherein the first surfactant is incorporated in the treating liquid at an amount ranging from 0.01 to 1 wt % based on a total weight of the treating liquid.
19. The method according to claim 12, wherein the second surfactant in the treating liquid is selected from the group consisting of hexyl benzene sulfonate, octyl benzene sulfonate, dodecyl benzene sulfonate, tetradecyl benzene sulfonate, hexadecyl benzene sulfonate and octadecyl benzene sulfonate.
20. The method according to claim 12, wherein the second surfactant is incorporated in the treating liquid at an amount ranging from 0.01 to 1 wt % based on a total weight of the treating liquid.
Patent Application
20070190770
