Claims
- 1. The improvement in a surface charge transfer device having a propagation channel positioned between a conventional phosphorus diffusion left channel stop element and a conventional phosphorus diffusion right channel stop element, the said propagation channel having a surface and a gate oxide layer positioned over the surface of the said propagation channel, the improvement comprising:
- a. a first phosphorus ion implant having a density of approximately 1.times.10.sup.11 impurities per square centimeter in the said surface of the propagation channel extending from the said left channel stop element; and
- b. a second phosphorus ion implant having a density of approximately 1.times.10.sup.11 impurities per square centimeter in the said surface of the propagation channel extending from the said right channel stop element to provide a trough at approximately the center of the said propagation channel between the said first phosphorus implant and the said second phosphorus implant having a width of approximately three times the thickness of the said oxide layer for confining the said surface charge.
Parent Case Info
This is a continuation of application Ser. No. 840,334, filed Oct. 7, 1977, now abandoned.
RIGHTS OF THE GOVERNMENT
The invention described herein may be manufactured and used by or for the Government of the United States for all governmental purposes without the payment of any royalty.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3826926 |
White et al. |
Jul 1974 |
|
4012587 |
Ochi et al. |
Mar 1977 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
840334 |
Oct 1977 |
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