The present invention relates to a power amplifier module, particularly to a technology that is effectively applied to a power amplifier module for a cellular phone system with the capability of output power control to be used on portable terminal equipment used in a mobile communication system.
Significant growth has lately been found in the market of cellular phone systems, typically, such as a Global System for Mobile Communication (GSM) and a Personal Communication Network (PCN) and this tendency is anticipated to continue in the future. One of the requirements of such systems as GSM and PCN is that the output power of portable terminal equipment can be controlled, dependent on the distance from a base station to the equipment. This can be fulfilled by controlling the gain of the power amplifier module installed on the equipment.
Using the above third-stage amplifier 603 and its output power control circuit 607, the output power control function will be explained below. The amplifier 603 comprises a transistor 606, a resistor 611, coupling capacitance 612, and an output adjustment circuit 613. The output power control circuit 607 comprises transistors 608, 609, and 610 and resistors 614, 615, and 616. Here, the diode-connected transistors 609 and 610 and the diode-connected transistors 608 and 606 form a current mirror circuit. Current that is as large as mirror ratio times the current flowing across the transistors 609 and 610 flows through the transistor 606 as the idling current.
The voltage across the transistors 609 and 610 becomes substantially constant when an output power control voltage applied to a pin 061 becomes higher than the boot voltage of these transistors. In the voltage region higher than the boot voltage, the idling current increases or decreases in proportion to the control voltage. Because the gain depends on this idling current, the gain can be made variable by controlling the idling current. In fact, the output power control uses this characteristic. In the conventional module example shown in
Output power control characteristic requirements are that output power shall change as a monotone function relative to the control voltage in a wide dynamic range of 70 to 80 dB (the output power typically ranges between −40 and 35 dBm for GSM) and that its change factor, or in other words, control sensitivity shall fall within a predetermined value (which is, typically, 150 dB/V or below). In the conventional module example shown in FIG. 9, however, the idling current changes in proportion to the control voltage.
For the circuit shown in
P21=a constant+20 log Id (dB), Id=(Vapc−2 Vb)/Rapc (1)
∂ P21/∂ Vapc=20/(Vapc−2 Vb)(dB/V) (2)
where Vapc>2 Vb
∂ P21/∂ Vapc=0 where Vapc≦2 Vb (3)
The above equations (1) and (2), where P21 is gain, Id is idling current, Vapc is control voltage, Vb is base-emitter voltage of the transistors 609 and 610, and Rapc is the resistance of the resistor 614, indicate the following. When the control voltage exceeds the sum of the boot voltages of the transistors 609 and 610, the idling current starts to flow, resulting in the greatest control sensitivity. The control sensitivity becomes theoretically infinity, but there are many cases where the input signal power level is actually 0 dBm or higher and the DC current generated by a self-bias effect causes the control sensitivity to be around 300 dB/V. For equation (3), idling current Id is generated if Vapc≦2 Vb, but there is no input of the required control voltage Vapc, causing that a ∂ P21/∂ Vapc=0.
For the above conventional module example, the first-stage amplifier 601, the second-stage amplifier 602, and the third-stage amplifier 603 operate in different states. Due to this, a kink is liable to take place in the control characteristic, which made it difficult to satisfy the output power control characteristic requirements of the power amplifier module. As apparent from a characteristic chart shown in
An object of the present invention is to provide a power amplifier module featuring that its output power characteristic smoothly changes as the input control voltage changes and that its control sensitivity is stable over a wide dynamic range. Another object of the present invention is to provide a power amplifier module of convenient service. The above and other objects as well as noticeable features of the present invention would be elucidated from the whole text of the present specification and the related drawings.
A typical power amplifier module embodied by the invention disclosed herein will be summarized below. The power amplifier module accomplishes output power control in such a manner that: upon the reception of control input voltage, idling current is generated and adjusted such that it exponentially changes, relative to the control input voltage and the idling current is supplied to a power amplifier element.
Other objects and advantages of the invention will become apparent during the following discussion of the accompanying drawings, wherein:
The V-I logarithmic conversion circuit 11 executes logarithmic conversion of an input control voltage, that is input through a pin 03, into current. This circuit 11 enables the idling current in the output transistor 2 to exponentially change relative to the input control voltage. The transistor 8 supplies the DC component of a base current that is generated, as an increment by the self-bias effect during the large-signal operation mode, and flows across the output transistor 2.
The impedance circuit 9 is used to prevent the instability of operation due to that a high-frequency signal of the input signals input through the pin 01 flows through the above-mentioned input transistor 3. Reference number 04 is a power source pin. The input transistor 3 forms a current mirror circuit in conjunction with the output transistor 2 and has a current sensing function. Therefore, when a reference current from the constant current source 7 is allowed to flow across the input transistor 3, current that is as large as mirror ratio times the reference current is allowed to flow across the transistor 3 as the idling current.
In the above-mentioned conventional module example shown in
P21=a constant+α Vapc/Vt×20 log e (dB),
Id=Is exp(α Vapc) (4)
∂ P21/∂ Vapc=α/Vt×20 log e=347α (dB/V) (5)
where Is and Vt (up to 25 mV) are physical constants and α is a coefficient. Equation (4) indicates that the gain is proportional to the input control voltage Vapc. From this, as is indicated in equation (5), it is seen that control sensitivity is constant in the present invention and desired control sensitivity can be obtained if coefficient α is set at a suitable value. For example, set coefficient α at 0.5 or less in order to give control sensitivity of 150 dB/V or below. This is attributed to the adjusted behavior of the idling current Id that exponentially changes, relative to the input control voltage Vapc. Most power amplifier modules used for practical application consist of a plurality of amplifiers. In practical situations, it is advisable to suitably allot the desired control sensitivity required for a power amplifier module among the multiple stages of amplifiers, according to their capabilities.
In the present invention, the relation of exponential function between the current supplied from the constant current source 7 and the input control voltage Vapc holds true. Thus, the idling current Id exponentially changes, relative to the input control voltage Vapc, as was indicated in equation (4). Here, the value of the idling current Id is determined from such DC bias of the output transistor 2 as to give desired output power and efficiency. On the other hand, an input signal is input through a pin 01, passes through the coupling capacitance 5, and after being amplified through the output transistor 2 and the adjustment circuit 4, it is output through a pin 02. Because the idling current Id exponentially changes, relative to the input control voltage Vapc, the gain (dB), or in other words, output power (dBm) increases or decreases in proportion to the input control voltage Vapc.
Therefore, constant control sensitivity such as a value of 347α (dB/V) for an input control voltage Vapc, as was indicated in equation (5), can be obtained. During the operation explained above, a smooth output power control characteristic with little kinks can be measured as apparent from the characteristic chart shown in
For the transistors 2, 3, and 8, any type of bipolar transistors such as GaAsHBTs, SiGeHBTs, or Si bipolar transistors can be applicable, as will be described later. Because the transistors 2 and 3 form a current mirror circuit, it is desirable that they are same type transistors and integrated on a same chip. For a current supply circuit 10 that supplies current to the transistors 2 and 3, an integrated circuit to which Si bipolar process is applied as well as HBT may be used. The V-I logarithmic conversion circuit 11 and the constant current source 7 may be any circuit type, provided they function, assuring that the reference current flows across the transistor 3, while changing exponentially, relative to the control voltage.
Unlike the above-mentioned conventional multi-stage amplifier module shown in
Note that different current mirror ratios are set for the amplifiers 102, 103, and 104, according to the difference in the dimensions of the transistors 105 and 108, the transistors 106 and 109, and the transistors 107 and 110. The smallest mirror ratio is set for the first-stage transistor 105 for which the smallest operating power is required. The greatest mirror ratio is set for the last-stage transistor 107 for which the greatest operating power is required. The greater the mirror ratio, the greater the idling current flows through the transistor.
According to the second embodiment, the transistors 105, 106, and 107 carry different idling currents that are determined by different current mirror ratios as described above, and consequently the amplifiers fundamentally operate in the same manner even if input power levels are different. Therefore, the amplifier module can be embodied, exhibiting the smoother output power control characteristic apparent from the characteristic chart shown in
Then, the circuit operation of second embodiment will be explained below. An input signal is applied to a pin 011 of the power amplifier module. The input signal passes through an adjustment circuit 111 where the signal source impedance is adjusted to an impedance match for input to the transistor 105 and is conveyed to the transistor 105 where its power is amplified. The amplified signal passes through an adjustment circuit 112 where the output impedance of the transistor 105 is adjusted to an impedance match for input to the transistor 106 and is supplied to the base of the transistor 106.
The signal thus conveyed to the transistor 106 is similarly conveyed from the transistor 106 through an adjustment circuit 113 to the transistor 197 and passes through an adjustment circuit 114, during which its power is serially amplified, and eventually it is output through a pin 012. As described above, a constant value of control sensitivity is given for a control voltage. If the amplifiers 102, 103, and 104 respectively have control sensitivity ∂ P21/∂ Vapc, control sensitivity ∂ P′21/∂ Vapc, and control sensitivity ∂ P″21/∂ Vapc, the control sensitivity of the whole power amplifier module ∂ P021/∂ Vapc is given by:
∂ P021/∂ Vapc=∂ P21/∂ Vapc+∂ P′21/∂ Vapc+∂ P″21/∂ Vapc (6)
The result is the sum of the values of control sensitivity of all amplifiers stages.
Equation (6) indicates that desired control sensitivity of the module is obtained by assigning required sensitivity components to the stages of amplifiers and the percentages of the components are optional. If desired control sensitivity is, for example, 150 dB/V or below and its even components are assigned to the amplifier stages, assign control sensitivity of 50 dB/V or below to each stage of amplifier so that the intention can be met.
A current supply circuit 115 or the amplifiers and the output power control circuit may be integrated on a single chip by applying Si bipolar transistors and SiGeHBT process. It is desirable to integrate the transistors 105 through 110 on a same chip in order to reduce the size of the power amplifier module as well as provide uniform characteristics.
The method and circuit operation for embodying this will be described below. First, a V-I conversion circuit 351 generates current that is proportional to the input control voltage Vapc that is input through a pin 013. When the input control voltage Vapc exceeds the base-emitter voltage of a transistor 302, the current determined by a resistor 301 starts to flow through the transistor 302. Because the transistors 302 and a transistor 303 form a current mirror circuit, current that is as large as mirror ratio times the current flowing through the transistor 302 then starts to flow across the transistor 303.
After a current mirror circuit formed by transistors 304 and 308 reverses-the direction of the current, the current is supplied via a transistor 309 to a resistor 307 and converted into voltage again. At this time, a transistor 305 supplies current to a transistor 306, thereby forming a pseudo voltage source. Voltage to be generated in the resistor 307 changes from the origin voltage that is generated by the above pseudo voltage source, that is, the base-emitter voltage of the transistor 306. The above process is carried out as preparation for establishing the relation of exponential function between the reference current to flow across a transistor 316 and the input control voltage Vapc. Meanwhile, because the voltage occurring across the resistor 307 is proportional to the input control voltage Vapc, a value of the α coefficient in the equations (4) and (5) can be determined by using the ratio of the resistance of the resistor 307 to the resistance of the resistor 301, which eventually can determine control sensitivity.
For example, increasing the resistance of the resistor 307 causes control sensitivity to increase because the voltage across the resistor 307 rises; inversely, decreasing the resistance causes control sensitivity to decrease. This means that control sensitivity can be determined by properly selecting a value of the α coefficient. The α coefficient primarily depends on the relative ratio of the resistance of the resistor 307 to the resistance of the resistor 301. Thus, the value of α is substantially constant, regardless of the productive deviation of the resistors. In other words, the control circuit of third embodiment has control sensitivity that is not susceptible to productive deviation, provided its circuit elements are packaged on a single semiconductor integrated circuit.
The voltage occurred across the resistor 307 is conducted via level-shift transistors 309 and 311 to the base of a transistor 312 where it is converted into a collector current of the transistor 312. At this time, because the emitter of the transistor 312 is grounded, the collector current is caused to exponentially change, according to the relation of exponential function between the current and the base voltage, that is, input control voltage Vapc.
After its direction is reversed by a current mirror circuit formed by transistors 313 and 314, that is, a constant current source, this collector current is supplied to the transistor 316 as reference current. A temperature characteristic control circuit 353 performs the task of adjusting the temperature characteristic of the reference current flowing through the transistor 316. Because the base-emitter voltage of the transistor 317 has a negative coefficient of temperature, the collector current continues to increase as temperature rises. The temperature characteristic control circuit 353 sets the temperature characteristic of the reference current to be supplied to the transistor 316 so that the coefficient of temperature of the current at high temperature will be less than the coefficient of temperature of the current at normal temperature. In this way, the circuit 353 functions to suppress the increase of the current due to the rise of the temperature of the transistor 317.
A transistor 315 supplies the DC component increment of the current to flow in the base of the transistor 317 when an amplifier 356 operates in large-signal mode. The output power control circuit 350 can be integrated by the Si process. However, the transistor 316 and the transistor 317 are same devices and should be integrated on a same chip.
Switching between the amplifiers is performed in accordance with, for example, the following condition setting. When the Vcnt control signal is “High” level (lower than 2 V), the amplifier for GSM system is active and the other amplifier for PCN system is inactive. When the Vcnt control signal is “Low” level, inversely, the amplifier for GSM is inactive and the other amplifier for PCN is active. Alternatively, the above levels of the Vcnt control signal may be upside down.
The current limit circuits 503 and 505 in
The power amplifier executes gain control in accordance with the above input control voltage and generates a send output signal. Part of the power loss is fed back to the above microprocessor CPU via a power coupler so that power control within a given range is performed as explained above. A frequency synthesizer generates an oscillating signal corresponding to the received signal frequency by using a reference oscillator TCXO, a voltage control oscillator VCO, and a PLL loop. This oscillating signal is conveyed to the mixer in the receive front end and supplied to a modulator as well. In the above tone processing circuit, the received signal drives a receiver from which a tone signal is output. Voice to send is converted into electric signals in a microphone and the signals are conveyed through the tone processing circuit and a modulator/demodulator to the modulator.
In such mobile communication equipment, the above power coupler is used or the power source current flowing in the power amplifier circuit is sensed to determine whether power output operation is performed within a given range as specified for send operation and a feedback signal is generated. By means of such feedback loop, the power amplifier executes gain control operation and this may cause oscillation. This oscillation mechanism is as follows. If a partial range of control sensitivity to input control voltage is extremely high, the output power excessively changes when the corresponding input control voltage is supplied. Feedback action to return the excessive change to normal recurs at delay timing during a feedback loop and this causes the output power to fluctuate largely.
Because a maximum distance between base stations is 10 miles (about 16 km), permitted for the above-mentioned GSM system, the output of a portable mobile phone must be controlled on a level ranging between 13 dBm and 43 dBm in 2-dB steps. This output control always controls the send power output of the portable mobile phone. In fact, the output control operation must be performed in accordance with control signals periodically transmitted from a base station. The power amplifier module provided by the present invention has substantially constant control sensitivity for all the region of input control voltages. Its stable control sensitivity over a wide dynamic range enables mobile communication equipment such as the above portable mobile phone to execute high-quality signal transmission.
According to the present invention, as explained above, the idling current to flow the power amplifier module exponentially changes, relative to output power control signals. Thus, the invention enables proportional or linear gain (dB) control in accordance with the input control voltage, providing required stable control sensitivity. As concerns a power amplifier module of multistage configuration, for example, two stages or three stages, because idling current supply to each amplifier stage for power control is performed by same means, the module can be designed to exhibit a good control characteristic with little kinks. Furthermore, the invention is beneficial for cost reduction because the output power control circuit can be fabricated with Si bipolar transistors and the power amplification stages may be fabricated with GaAsHBT, SiGe-HBT, and Si bipolar transistors in combination.
The forgoing embodiments produce the following effects:
The present embodiments explained above are to be considered illustrative and the present invention is not limited to the foregoing embodiments. Of course, the invention maybe embodied in other modification forms within a-scope not departing from the spirit or essence thereof. For example, for the first embodiment shown in
Mobile communication equipment to which the present invention is applied includes, in addition to those such as mobile phones that perform tone or voice signal transmission/reception, those that perform digital signal transmission/reception to/from a personal computer or other similar mobile communication equipment via a digital telephone switch network by converting digital signals into signals in a tone signal frequency band. For such digital signal transmission/reception, the present invention makes the transmission signal level stable, which can achieve data communications at a higher rate. The present invention can be widely used for power amplifier modules used on such mobile communication equipment.
A typical implementation of the invention disclosed herein produces effects that will be summarized below. According to the present invention, idling current to flow a power amplifier exponentially changes, relative to output power control signals, so that gain can be controlled in proportion to the control voltage and required control sensitivity can be obtained. For a power amplifier module of two-stage or three-stage configuration, because idling current supply to each amplifier stage for power control can be performed by same means, the module can be designed to exhibit a good control characteristic with little kinks.
Although the invention has been described in its preferred form with a certain degree of particularity, it is understood that the present disclosure of the preferred form has been changed in the details of construction and the combination and arrangement of parts may be resorted to without departing from the spirit and the scope of the invention as hereinafter claimed.
Number | Date | Country | Kind |
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11-306266 | Oct 1999 | JP | national |
This application is a continuation of application Ser. No. 10/878,308 filed Jun. 29, 2004 (now U.S. Pat. No. 6,958,656 issued Oct. 25, 2005), which is a continuation of application Ser. No. 09/692,182 filed Oct. 20, 2000 (now U.S. Pat. No. 6,771,128 issued Aug. 3, 2004).
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Number | Date | Country | |
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20060028277 A1 | Feb 2006 | US |
Number | Date | Country | |
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Parent | 10878308 | Jun 2004 | US |
Child | 11247185 | US | |
Parent | 09692182 | Oct 2000 | US |
Child | 10878308 | US |