POWER CONVERSION DEVICE

Abstract

An insulated gate bipolar transistor and a protective circuit are incorporated. The protective circuit has first and second Zener diodes connected in series in directions opposite to each other between the gate and the current sense terminal of the insulated gate bipolar transistor, and third and fourth Zener diodes connected in series in directions opposite to each other between the gate and the emitter of the insulated gate bipolar transistor.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing a power conversion device according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing a power conversion device according to a second embodiment of the present invention.

FIG. 3 is a circuit diagram showing a power conversion device according to a third embodiment of the present invention.

FIG. 4 is a circuit diagram showing a power conversion device according to a fourth embodiment of the present invention.

FIG. 5 is a circuit diagram showing a power conversion device according to a fifth embodiment of the present invention.

FIG. 6 is a circuit diagram showing a power conversion device according to a sixth embodiment of the present invention.

FIG. 7 is a circuit diagram showing a power conversion device according to a seventh embodiment of the present invention.

FIG. 8 is a circuit diagram showing a power conversion device according to an eighth embodiment of the present invention.

FIG. 9 is a top view of a power conversion device according to a ninth embodiment of the present invention.

FIG. 10A is a top view of a protective circuit.

FIG. 10B is a top view of a state in which a protective chip is joined to the power conversion device according to the ninth embodiment of the present invention.

FIG. 10C is a sectional view taken along line X-XX in FIG. 10B.

FIG. 11A is a top view of a protective circuit.

FIG. 11B is a top view of a state in which a protective chip is joined to a power conversion device according to a tenth embodiment of the present invention.

FIG. 11C is a sectional view taken along line X-XX in FIG. 11B.

FIG. 12 is a top view of a state in which a protective chip is joined to a power conversion device according to an eleventh embodiment of the present invention.

FIG. 13 is a circuit diagram showing a power conversion device according to a twelfth embodiment of the present invention.

FIG. 14 is a circuit diagram showing a power conversion device according to a thirteenth embodiment of the present invention.

FIG. 15 is a circuit diagram showing a power conversion device according to a fourteenth embodiment of the present invention.

FIG. 16A is a top view of a protective circuit.

FIG. 16B is a top view of a state in which a protective chip is joined to a power conversion device according to a fifteenth embodiment of the present invention.

FIG. 16C is a sectional view taken along line X-XX in FIG. 16B.

FIG. 17A is a top view of a protective circuit.

FIG. 17B is a top view of a state in which a protective chip is joined to a power conversion device according to a sixteenth embodiment of the present invention.

FIG. 17C is a sectional view taken along line X-XX in FIG. 17B.

FIG. 18 is a top view of a state in which a protective chip is joined to a power conversion device according to an eleventh embodiment of the present invention.

FIG. 19 is a circuit diagram showing a half-bridge chopper to which the power conversion device according to one of the embodiments of the present invention is applied.

FIG. 20 is a circuit diagram showing a single-phase full bridge inverter to which the power conversion device according to one of the embodiments of the present invention is applied.

FIG. 21 is a circuit diagram showing a three-phase full-bridge inverter to which the power conversion device according to one of the embodiments of the present invention is applied.

FIG. 22 is a circuit diagram showing a conventional power conversion device 1 and an external circuit.

FIG. 23 is a circuit diagram showing a conventional power conversion device comprising a RTC circuit.

Claims

1. A power conversion device comprising an insulated gate bipolar transistor and a protective circuit, the protective circuit having: first and second Zener diodes connected in series in directions opposite to each other between the gate and the current sense terminal of the insulated gate bipolar transistor; andthird and fourth Zener diodes connected in series in directions opposite to each other between the gate and the emitter of the insulated gate bipolar transistor.

2. The power conversion device according to claim 1, wherein the protective circuit further has: an NMOS transistor having its gate connected to the current sense terminal of the insulated gate bipolar transistor, its source connected to the emitter of the insulated gate bipolar transistor and its drain connected to the gate of the insulated gate bipolar transistor; anda first resistor connected between the current sense terminal and the emitter of the insulated gate bipolar transistor.

3. The power conversion device according to claim 2, wherein the protective circuit further has a first diode connected between the gate of the insulated gate bipolar transistor and the drain of the NMOS transistor.

4. The power conversion device according to claim 2, wherein the protective circuit further has a second resistor connected between the current sense terminal of the insulated gate bipolar transistor and the gate of the NMOS transistor.

5. The power conversion device according to claim 1, wherein the protective circuit further has: a first diode group formed of a plurality of diodes connected in series between the current sense terminal and the emitter of the insulated gate bipolar transistor; anda second diode group which is formed of a plurality of diodes connected in series, and which is connected in parallel with the first diode group in the direction opposite to the direction of connection of the first diode group.

6. The power conversion device according to claim 1, wherein the protective circuit further has: a first diode group formed of a plurality of diodes connected in series between the current sense terminal and the emitter of the insulated gate bipolar transistor; anda second single diode connected in parallel with the first diode group in the direction opposite to the direction of connection of the first diode group.

7. The power conversion device according to claim 1, wherein the protective circuit further has a fifth and sixth Zener diodes connected in series in directions opposite to each other between the current sense terminal and the emitter of the insulated gate bipolar transistor.

8. The power conversion device according to claim 2, wherein the protective circuit further has an external resistor or an external capacitor connected in parallel with the first resistor.

9. A power conversion device comprising an insulated gate bipolar transistor and a protective circuit, the protective circuit having: a first diode group formed of a plurality of diodes connected in series between the gate and the current sense terminal of the insulated gate bipolar transistor;a second diode group which is formed of a plurality of diodes connected in series, and which is connected in parallel with the first diode group in the direction opposite to the direction of connection of the first diode group;a third diode group formed of a plurality of diodes connected in series between the gate and the emitter of the insulated gate bipolar transistor; anda fourth diode group which is formed of a plurality of diodes connected in series, and which is connected in parallel with the third diode group in the direction opposite to the direction of connection of the third diode group.

10. The power conversion device according to claim 1, wherein the current sense terminal of the insulated gate bipolar transistor is connected to an external terminal.

11. The power conversion device according to claim 1, further comprising a temperature measuring diode in the vicinity of the insulated gate bipolar transistor, wherein the protective circuit further has a third diode having its cathode connected to the anode of the temperature measuring diode and its anode connected to the cathode of the temperature measuring diode.