Power module

Information

  • Patent Grant
  • D1055880
  • Patent Number
    D1,055,880
  • Date Filed
    Tuesday, December 13, 2022
    2 years ago
  • Date Issued
    Tuesday, December 31, 2024
    3 months ago
  • US Classifications
    Field of Search
    • US
    • D13 123
    • D13 133
    • D13 1371
    • D13 1372
    • D13 1374
    • D13 1391
    • D13 1392
    • D13 1393
    • D13 1394
    • D13 1396
    • D13 1397
    • D13 1398
    • D13 146
    • D13 147
    • D13 152
    • D13 184
    • D13 199
    • D13 182
    • CPC
    • H01R12/00
    • H01R12/70
    • H01R13/00
    • H01R13/40
    • H01R13/62
    • H01L24/42
    • H01L24/47
    • H01L24/49
    • H01L23/49532
    • H01L2924/00
    • H01L2924/181
    • H01L25/072
    • H05K2201/09709
  • International Classifications
    • 1303
    • Term of Grant
      15Years
Abstract
Description


FIG. 1 is a front, top, and right side perspective view of a power module showing our new design;



FIG. 2 is a rear, top and left side perspective view thereof;



FIG. 3 is a front elevational view thereof;



FIG. 4 is a rear elevational view thereof;



FIG. 5 is a left side elevational view thereof;



FIG. 6 is a right side elevational view thereof;



FIG. 7 is a top plan view thereof; and,



FIG. 8 is a bottom plan view thereof.


The broken line portions in the drawing views are included to show portions of the power module only and form no part of the claimed design.


Claims
  • The ornamental design for a power module as shown and described.
US Referenced Citations (12)
Number Name Date Kind
D448740 Iwasaki Oct 2001 S
D470824 Iwasaki Feb 2003 S
D483011 Shimada Dec 2003 S
D488773 Shimada Apr 2004 S
D489038 Shimada Apr 2004 S
D824866 Matsubara Aug 2018 S
D920264 McBride May 2021 S
D973029 Tanikawa Dec 2022 S
20110278706 Herras Nov 2011 A1
20160192493 Ehrmann Jun 2016 A1
20230369163 Yang Nov 2023 A1
20240194554 Wong Jun 2024 A1
Foreign Referenced Citations (5)
Number Date Country
308593855 Apr 2024 CN
D1617692 Nov 2018 JP
D1692090 Aug 2021 JP
D1724640 Sep 2022 JP
D1730560 Nov 2022 JP
Non-Patent Literature Citations (4)
Entry
(Pack of 4) ASEMI Bridge Rectifier D50XB160 DIP-4 Package Through Hole Rectifier, dated Sep. 11, 2018, [online], [site visited Sep. 23, 2024]. Available from Internet, URL: https://www.amazon.com/ASEMI-Rectifier-D50XB160-Package-Through/dp/B07Y4LBDKN (Year: 2018).
Business Wire, Toyoda Gosei Develops Vertical GaN Power Device . . . , dated May 23, 2019, [online], [site visited Sep. 23, 2024]. Available from Internet, URL: https://www.businesswire.com/news/home/20190522005428/en/Toyoda-Gosei-Develops-Vertical-GaN-Power-Device-With-Current-Operation-of-100-Amperes (Year: 2019).
Mitsubishi launching 4-terminal 1200V SiC MOSFETs, dated Nov. 12, 2020, [online], [site visited Sep. 23, 2024]. Available from Internet, URL:https://www.semiconductor-today.com/news_items/2020/nov/mitsubishi-121120.shtml (Year: 2020).
Future Electronics, Infineon: Experience the difference of Si / SiC / GaN technology, dated Dec. 15, 2020, [online], [site visited Sep. 23, 2024]. Available from Internet, URL: https://www.youtube.com/watch?v=aake09AW1D8 (Year: 2020).