Patent Application
20250203926
The present application claims the priorities of Korean Patent Application No. 10-2023-0186366, filed on Dec. 19, 2023 and Korean Patent Application No. 10-2024-0087563, filed on Jul. 3, 2024, which are hereby incorporated by reference in their entirety.
The present disclosure relates to a power semiconductor device and a power converter including the same.
A power semiconductor is one of the key elements that determines the efficiency, speed, durability, and reliability of power electronic systems.
With the recent development of the power electronics industry, the previously used silicon (Si) power semiconductors have reached their physical limits, research is being actively conducted on WBG (wide bandgap) power semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) power semiconductor to replace the Si power semiconductor.
WBG power semiconductor devices have a band gap energy that is approximately three times than that of Si power semiconductor devices, due to this, it has the characteristics of low intrinsic carrier concentration, high breakdown electric field (about 4 to 20 times), high thermal conductivity (about 3 to 13 times), and large electron saturation rate (about 2 to 2.5 times) comparing the Si power semiconductor.
Since these characteristics enable operation in high temperature and high voltage environments, the WBG power semiconductor devices have high switching speed and low switching loss. Among these, gallium nitride (GaN) power semiconductor devices may be used in low-voltage systems, and silicon carbide (SiC) power semiconductor devices may be suitable for high-voltage systems.
SiC MOSFET power semiconductors in the prior art generally have a vertical diffused structure and are referred to as VDMOSFETs, and also may be referred to simply as double-diffused structure DMOSFETs. Additionally, SiC MOSFETs may be classified into Planar MOSFETs and Trench MOSFETs depending on the direction of the channel.
On the other hand, MOSFET with the trench structure has a problem in that electric field is concentrated in an edge area according to the shape of the trench gate. Even if a P-shield process is performed to solve this, there are problems such as adding a mask layer, an increased process difficulty, and an increased cell pitch, so a new solution is needed.
In addition, MOSFET with the conventional trench structure has a problem in that the reliability of the device is reduced because it is difficult to precisely control the channel area and the short circuit characteristics.
Accordingly, the present disclosure is directed to a power semiconductor device and a power converter including the same that substantially obviate one or more of problems due to limitations and disadvantages described above.
More specifically, the present disclosure is to provide a power semiconductor device and a power converter including the same that may prevent the electric field concentration in a lower edge area of the trench gate.
In addition, the present disclosure is to provide a power semiconductor device and a power converter including the same that may improve the reliability of the device during a high-speed switching.
The present disclosure is not limited to those described in this item and include those that may be understood through the description of the disclosure.
A power semiconductor device according to an aspect and a power converter including the same may include: a substrate (110); an epi layer of a first conductivity type (117) disposed on the substrate (110); a plurality of wells of a second conductivity type (130) arranged spaced apart from each other on the epi layer of the first conductivity type (117); a gate (160) disposed between the plurality of wells of the second conductivity type (130); a gate insulating layer (155) disposed to surround at least a portion of the gate (160); and a doped region of the first conductivity type (140a) disposed on a side of the gate insulating layer (155). The doped region of the first conductivity type may include a first doped region of the first conductivity type (140a) and a second doped region of the first conductivity type (140b) disposed below the first doped region of the first conductivity type (140a). And a doping concentration of the second doped region of the first conductivity type (140b) may be lower than a doping concentration of the first doped region of the first conductivity type (140a).
In addition, in an aspect, a bottom surface of the second doped region of the first conductivity type (140b) may be positioned higher than a bottom surface of the gate (160).
In addition, in the aspect, a lower edge region of the gate insulating layer (155) may be in contact with the wells of the second conductivity type (130).
In addition, in the aspect, a bottom surface of the wells of the second conductivity type (130) may be positioned lower than the bottom surface of the gate insulating layer (155).
In addition, in the aspect, the doped region of the first conductivity type (140) and the epi layer of the first conductivity type (117) do not contact each other, and the wells of the second conductivity type (130) may be positioned between the doped region of the first conductivity type (140) and the epi layer of the first conductivity type (117).
In addition, in the aspect, the first doped region of the first conductivity type (140a) and the second doped region of the first conductivity type (140b) may be in contact with one side surface of the gate insulating layer (155).
In addition, in the aspect, a longitudinal direction of the first doped region of the first conductivity type (140a) may be horizontal, and a longitudinal direction of the second doped region of the first conductivity type (140b) may be vertical.
In addition, in the aspect, a horizontal width of the second doped region of the first conductivity type (140b) may be less than a horizontal width of the first doped region of the first conductivity type (140a).
In addition, in the aspect, a depth of the doped region of the first conductivity type (140) may be less than a depth of the gate (160).
In addition, in the aspect, the second doped region of the first conductivity type (140b) may not vertically overlap with the source contact layer (145).
In addition, in the aspect, a JFET region (150) disposed on a bottom surface of the gate insulating layer (155) is further included, and the JFET region (150) may be in contact with the plurality of wells of the second conductivity type (130).
A horizontal width of the JFET region may be larger than a horizontal width of the gate.
A first length (L1) of the second doped region of the first conductivity type (140b) in contact with the gate insulating layer (155) may be longer than a second length (L2) of the wells of the second conductivity type (130) in contact with the gate insulating layer (155).
A region of the wells of the second conductivity type (130) in contact with the gate insulating layer may be disposed below the second doped region of the first conductivity type (140b).
In addition, the power semiconductor device according to the aspect may include a substrate, an epi layer of a first conductivity type (117) disposed on the substrate, a plurality of wells of a second conductivity type (130) spaced apart from each other on the epi layer of the first conductivity type (117), a gate disposed between the plurality of wells of the second conductivity type (130), and a gate insulating layer (155) disposed to surround at least a portion of the gate.
In addition, the aspect includes a doped region of the first conductivity type (140) disposed on a side of the gate insulating layer (155).
The doped region of the first conductivity type (140) may include a first doped region of the first conductivity type (140a) and a second doped region of the first conductivity type (140b) disposed below the first doped region of the first conductivity type (140a).
A doping concentration of the second doped region of the first conductivity type (140b) may be lower than a doping concentration of the first doped region of the first conductivity type (140a).
An upper surface of the second doped region of the first conductivity type may be in contact with a bottom surface of the first doped region of the first conductivity type.
An inner surface of the second doped region of the first conductivity type may be aligned with an inner surface of the first doped region of the first conductivity type between the upper and bottom surfaces.
A vertical thickness of the second doped region of the first conductivity type may be greater than ½ of the vertical thickness of the gate.
In addition, the power semiconductor device according to the aspect may include a substrate, an epi layer of a first conductivity type disposed on the substrate, a plurality of wells of a second conductivity type spaced apart from each other on the epi layer of the first conductivity type, a gate disposed between the plurality of wells of the second conductivity type, and a gate insulating layer disposed to surround at least a portion of the gate.
In addition, the aspect may include a doped region of the first conductivity type disposed on a side of the gate insulating layer, and the doped region of the first conductivity type may include a first doped region of the first conductivity type and a second doped region of the first conductivity type disposed below the first doped region of the first conductivity type.
A horizontal width of the second doped region of the first conductivity type may be less than a horizontal width of the first doped region of the first conductivity type.
A doping concentration of the second doped region of the first conductivity type may be lower than a doping concentration of the first doped region of the first conductivity type.
A bottom surface of the second doped region of the first conductivity type is positioned higher than a bottom surface of the gate, and a lower edge area of the gate insulating layer may be in contact with the wells of the second conductivity type.
A bottom surface of the wells of the second conductivity type may be positioned lower than a bottom surface of the gate insulating layer, the doped region of the first conductivity type and the epi layer of the first conductivity type are spaced apart from each other, and the wells of the second conductivity type may be positioned between the doped region of the first conductivity type and the epi layer of the first conductivity type.
An inner surface of the second doped region of the first conductivity type is aligned vertically with an inner surface of the first doped region of the first conductivity type, and a vertical thickness of the second doped region of the first conductivity type may be greater than ½ of a vertical thickness of the gate.
The power semiconductor device according to the aspect has a technical effect of preventing the electric field concentration in the lower edge region of the trench gate.
For example, the aspect may prevent the electric field concentration in the lower edge region of the trench gate by arranging the wells of the second conductivity type to surround the lower edge region of the trench gate.
In addition, the aspect may prevent the electric field concentration in the lower edge region of the trench gate without a separate P-shield process, so that a high-energy ion implantation process is not required, thereby preventing damage to the device and simplifying the process.
In addition, the aspect has a technical effect of improving the reliability of the device during high-speed switching.
For example, since the doping concentration of the second doped region of the first conductivity type disposed on the trench gate side is formed lower than the doping concentration of the first doped region of the first conductivity type, the saturation current decreases and the SCWT (Short Circuit Withstand Time) increases, so that the reliability of the device may be improved during high-speed switching.
The effects of the present disclosure are not limited to those described above and include those that may be understood through the description of the disclosure.
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of the disclosure, illustrate aspects of the disclosure and together with the description serve to explain the principle of the disclosure.
In the drawings:
Hereinafter, the embodiments disclosed in this specification will be described in detail with reference to the attached drawings. The suffixes ‘module’ and ‘part’ used for elements in the following description are given or used interchangeably in consideration of the ease of writing the specification, and do not have distinct meanings or roles in themselves. In addition, the attached drawings are intended to facilitate easy understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited by the attached drawings. In addition, when an element such as a layer, region, or substrate is mentioned as existing ‘on’ another element, this includes that it may be directly on the other element, or that other intermediate elements may exist in between.
In the specification or claims, the meaning of “an element A includes at least one of a, b, and/or c” may include {circle around (1)} when the element A includes a, {circle around (2)} when the element A includes b, {circle around (3)} when the element A includes c, {circle around (4)} when the element A includes a and b, {circle around (5)} when the element A includes b and c, {circle around (6)} when the element A includes a and c, and {circle around (7)} when the element A includes all of a, b, and c.
The singular expression includes the plural expression as well as the singular expression unless the context clearly indicates otherwise. For example, the meaning of “element A includes a structure” may include the meaning of “element A includes one or more structures.”
The power converter (1000) according to the aspect may receive DC power from a battery or a fuel cell, convert it into AC power, and supply AC power to a predetermined load. For example, the power converter (1000) according to the aspect may include an inverter, and may receive DC power from a battery, convert it into three-phase AC power, and supply it to a motor (M), and the motor (M) may provide power to an electric vehicle, a fuel cell vehicle, etc.
The power converter (1000) according to the aspect may include a power semiconductor device (100). The power semiconductor device (100) may be a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but is not limited thereto, and may include an IGBT (Insulated Gate Bipolar Transistor).
For example, the power converter (1000) may include a plurality of power semiconductor devices (100a, 100b, 100c, 100d, 100e, 100f) and may include a plurality of diodes (not shown). Each of the plurality of diodes may be embedded in the power semiconductor devices (100a, 100b, 100c, 100d, 100e, 100f) in the form of an internal diode, but is not limited thereto, and may be disposed separately.
The aspect may convert DC power into AC power through on-off control for a plurality of power semiconductor devices (100a to 100f). For example, the power converter (1000) according to the aspect may supply positive power to the motor (M) by turning on the first power semiconductor device (100a) and turning off the second power semiconductor device (100b) in the first-time section of one cycle, and supply negative power to the motor (M) by turning off the first power semiconductor device (100a) and turning on the second power semiconductor device (100b) in the second time section of one cycle.
In the aspect, a group of power semiconductor devices arranged in series in the high-voltage line and the low-voltage line of the input side may be called an arm. For example, the first power semiconductor device (100a) and the second power semiconductor device (100b) may be called a first arm. The third power semiconductor device (100c) and the fourth power semiconductor device (100d) may constitute a second arm, and the fifth power semiconductor device (100e) and the sixth power semiconductor device (100f) may constitute a third arm.
In the arm, the upper power semiconductor device and the lower power semiconductor device may be controlled not to be turned on at the same time. For example, in the first arm, the first power semiconductor device (100a) and the second power semiconductor device (100b) may not be turned on at the same time but may be turned on and off alternately.
Each power semiconductor device (100a to 100f) may be supplied with a high voltage in an off state. For example, when the first power semiconductor device (100a) is turned on and the second power semiconductor device (100b) is turned off, the input voltage may be applied as is to the second power semiconductor device (100b). The voltage input to the second power semiconductor device (100b) may be a relatively high voltage, and the withstand voltage of each power semiconductor device (100a to 100f) may be designed to be at a high level to withstand this high voltage.
Each power semiconductor device (100a to 100f) may conduct a high current when turned on. The motor (M) is driven by a relatively high current, and this high current may be supplied to the motor (M) through the power semiconductor device that is turned on.
The high voltage applied to each power semiconductor device (100a to 100f) may cause a high switching loss. High currents that conduct power semiconductor devices (100a to 100f) may cause high conduction losses. To dissipate heat generated by such losses, power semiconductor devices (100a to 100f) may be packaged into a power semiconductor module including a heat dissipation means.
The power semiconductor device (100) of the aspect may be a silicon carbide (SiC) power semiconductor device, and may operate in a high temperature, high voltage environment and have a high switching speed and low switching loss.
Meanwhile, the power converter (1000) according to the aspect may include a plurality of power semiconductor modules.
For example, a plurality of power semiconductor devices (100a to 100f) illustrated in
For example, the first power semiconductor device (100a), the second power semiconductor device (100b), the third power semiconductor device (100c), the fourth power semiconductor device (100d), the fifth power semiconductor device (100e), and the sixth power semiconductor device (100f) illustrated in
In addition, to increase the current capacity, there may be additional power semiconductor devices arranged in parallel with each power semiconductor device (100a to 100f). In this case, the number of power semiconductor devices included in the power semiconductor module may be more than six.
The power converter (1000) according to the aspect may also include a diode-type power semiconductor device in addition to the transistor-type power semiconductor devices (100a to 100f). For example, a first diode (not shown) may be disposed in parallel with the first power semiconductor device (100a), and a second diode (not shown) may be disposed in parallel with the second power semiconductor device (100b). In addition, these diodes may also be packaged together in one power semiconductor module. In addition, the diodes may be disposed in the form of internal diodes in each power semiconductor device.
Next, the power semiconductor devices constituting each arm may be packaged in one power semiconductor module.
For example, the first power semiconductor device (100a) and the second power semiconductor device (100b) constituting the first arm may be packaged as a first power semiconductor module, the third power semiconductor device (100c) and the fourth power semiconductor device (100d) constituting the second arm may be packaged as a second power semiconductor module, and the fifth power semiconductor device (100e) and the sixth power semiconductor device (100f) constituting the third arm may be packaged as a third power semiconductor module.
In addition, to increase the current capacity, there may be additional power semiconductor devices arranged in parallel with each power semiconductor device (100a to 100f), and in this case, the number of power semiconductor devices included in each power semiconductor module may be more than two. And, in addition to the transistor-type power semiconductor devices (100a to 100f), each arm may also include a diode-type power semiconductor device (not shown), and these diodes may also be packaged together in one power semiconductor module. In addition, the diode may be disposed in the form of an internal diode in each power semiconductor device.
Next,
The power semiconductor device (100) according to the aspect may include a source electrode (190), a gate electrode (175) disposed on an upper side of a predetermined semiconductor epi layer (120), and a drain electrode (105) disposed on a lower side of the semiconductor epi layer (120).
In the form of a MOSFET, the source electrode (190) or the gate electrode (175) may include an Al or Al alloy, and the drain electrode (105) may include a Ti/Ni/Ag metal including a Ti layer, a Ni layer, and an Ag layer, or NiV/Ag, V (vanadium)/Ni/Ag, etc., but is not limited thereto.
Next,
In detail, in the aspect, a drain electrode (115) may be disposed under the substrate (110). Also, the epi layer of the first conductivity type (117) may be disposed on the substrate (110). The epi layer of the first conductivity type (117) may be an N-type drift region, but is not limited thereto.
Also, the wells of the second conductivity type (130) may be disposed on the epi layer of the first conductivity type (117). The wells of the second conductivity type (130) may include a plurality of wells arranged spaced apart from each other. Between the above-mentioned plurality of wells of the second conductivity type (130), a gate (160) and a gate insulating layer (155) may be disposed. The gate insulating layer (155) may be disposed to surround side and bottom surfaces of the gate (160). The gate (160) may be located on an inner side of the gate insulating layer (155). In addition, a JFET region (150) may be disposed below the gate (160) and the gate insulating layer (155) to protect the gate insulating layer (155), but is not limited thereto.
Meanwhile, in the case of the trench MOSFET studied internally, a problem has been studied in which the gate insulating layer may be damaged due to an electric field being concentrated in a lower edge region of the trench gate. To this end, a separate ion implantation region such as a P-shield process was formed to prevent the electric field concentration, but there was difficulty in the process of forming a separate ion implantation region.
In addition, the trench-structured MOSFET had a problem in that the reliability of the device was reduced because it was difficult to precisely control a channel area and short circuit characteristics.
To solve the above problem, in the aspect, the wells of the second conductivity type (130) may be formed deeper than the gate (160) and the gate insulating layer (155). In detail, a bottom surface of the wells of the second conductivity type (130) may be positioned lower than bottom surfaces of the gate (160) and the gate insulating layer (155). In addition, the wells of the second conductivity type (130) may be in contact with the gate insulating layer (155). Therefore, the aspect has a technical effect in that the wells of the second conductivity type (130) are arranged to surround a lower edge area of the trench gate, thereby preventing electric field concentration.
In addition, in the aspect, a doped region of the first conductivity type (140), an ion implantation region of the second conductivity type (135), and a source contact layer (145) may be disposed on the wells of the second conductivity type (130). The doped region of the first conductivity type (140) may be disposed on a side of the gate insulating layer (155). The doped region of the first conductivity type (140) may be disposed to extend along the gate insulating layer (155) to the source contact layer (145). The source contact layer (145) may be electrically connected to a source electrode (not shown).
Meanwhile, the doped region of the first conductivity type (140) may include a first doped region of the first conductivity type (140a) and a second doped region of the first conductivity type (140b) disposed below the first doped region of the first conductivity type (140a). The first doped region of the first conductivity type (140a) may be in contact with the source contact layer (145). In addition, the first doped region of the first conductivity type (140a) may be in contact with the ion implantation region of the second conductivity type (135).
In addition, the first doped region of the first conductivity type (140a) may be in contact with the gate insulating layer (155). A top surface of the first doped region of the first conductivity type (140a) may correspond to a top surface of the gate (160). A longitudinal direction of the first doped region of the first conductivity type (140a) may be a horizontal direction. In addition, a longitudinal direction of the second doped region of the first conductivity type (140b) may be vertical.
In addition, the second doped region of the first conductivity type (140b) may be in contact with a side surface of the gate insulating layer (155). The second doped region of the first conductivity type (140b) may be disposed to extend vertically from a bottom surface of the first doped region of the first conductivity type (140a). In addition, a bottom surface of the second doped region of the first conductivity type (140b) may be positioned higher than a bottom surface of the gate (160). In addition, a horizontal width of the second doped region of the first conductivity type (140b) may be less than a horizontal width of the first doped region of the first conductivity type (140a). In addition, one side surface of the second doped region of the first conductivity type (140b) may have a width corresponding to one side surface of the insulating layer (165) covering the gate (160).
Meanwhile, a doping concentration of the second doped region of the first conductivity type (140b) may be lower than a doping concentration of the first doped region of the first conductivity type (140a). The doping concentration of the doped region (140) that contacts a side surface of the gate insulating layer (155) may vary in a vertical direction.
Meanwhile, in the aspect, current may flow through the drain electrode (115), the substrate (110), the epi layer of the first conductivity type (117), the wells of the second conductivity type (130), the second doped region of the first conductivity type (140b), the first doped region of the first conductivity type (140a), and the source electrode (not shown). In addition, a channel may be formed between the bottom surface of the second doped region of the first conductivity type (140b) and the bottom surface of the wells of the second conductivity type (130).
Therefore, in the aspect, as the current passes through the doped region of the first conductivity type (140) in which the doping concentration changes in the vertical direction from the trench gate side, the saturation current may be reduced. In detail, by controlling a sheet resistance in the second doped region of the first conductivity type (140b) which is doped less than the first doped region of the first conductivity type (140a) to relatively increase, the on-resistance (Ron) in the second doped region of the first conductivity type (140b) may be relatively increased, thereby reducing the saturation current. Therefore, the aspect has a technical effect of improving reliability during high-speed switching by increasing the SCWT (Short Circuit Withstand Time) as the saturation current decreases.
Hereinafter, the technical features of the aspect will be described in detail while explaining the manufacturing process of the power semiconductor device according to the aspect with reference to
Referring to
The substrate (110) and the epi layer of the first conductivity type (117) may include SiC (Silicon Carbide), but are not limited thereto.
For example, the substrate (110) and the epi layer of the first conductivity type (117) may include 4H—SiC material, but are not limited thereto. For example, the substrate (110) and the epi layer of the first conductivity type (117) may include 3C—SiC or 6H—SiC.
In addition, the epi layer of the first conductivity type (117) may include multiple layers having different concentrations and may have a current spreading layer (CSL) function.
For example, the epi layer of the first conductivity type (117) may include a first conductivity type buffer layer (not shown) and a first conductivity type drift layer (not shown).
In addition, the first conductivity type may be N type, and the second conductivity type may be P type, but is not limited thereto.
In addition, the first doped region of the first conductivity type (140a) and the ion implantation region of the second conductivity type (135) of the second conductivity type may be formed on the epi layer of the first conductivity type (117) through an implant process. The first doped region of the first conductivity type (140a) may be disposed between the ion implantation region of the second conductivity type (135). The longitudinal direction or the length direction of the first doped region of the first conductivity type (140a) may be a horizontal direction.
For example, the first doped region of the first conductivity type (140a) may function as a source region of the first conductivity type, and may be formed by ion implanting an N-type dopant such as nitrogen or phosphorus at a concentration of about 1×1019 cm−3 to about 3×1020 cm−3.
In addition, the ion implantation region of the second conductivity type (135) may be contacted with a source electrode thereafter. In addition, the ion implantation region of the second conductivity type (135) may function to maintain the potential of the wells of the second conductivity type (130) of the second conductivity type, and may function as a body diode.
Next, referring to
Next, referring to
For example, the depth of the second doped region of the first conductivity type (140b) may be 50% to 80% of the depth of the wells of the second conductivity type (130), but is not limited thereto.
The wells of the second conductivity type (130) region exposed in the subsequent trench etching process may be a channel region.
In addition, the doping concentration of the second doped region of the first conductivity type (140b) may be lower than the doping concentration of the first doped region of the first conductivity type (140a).
For example, the second doped region of the first conductivity type (140b) may be formed by ion implanting an N-type dopant, such as nitrogen or phosphorus, at a concentration of about 1×1017 cm−3 to about 3×1019 cm−3, but is not limited thereto.
According to the aspect, the doping concentration of the second doping region (140b) is controlled to be lower than the doping concentration of the first doping region (140a), and through this, the on-resistance (Ron) in the second doping region (140b) is relatively increased. And since the saturation current is reduced, the SCWT (Short Circuit Withstand Time) may be increased, there is technical effect in that the reliability may be improved during high-speed switching.
Next, referring to
Afterwards, a portion of the first doped region of the first conductivity type (140a), the second doped region of the first conductivity type (140b), and the epi layer of the first conductivity type (117) may be etched to form a trench (170). The bottom surface of the trench (170) may be positioned higher than the bottom surface of the wells of the second conductivity type (130), but is not limited thereto.
In the aspect, the first length (L1) of the second doped region of the first conductivity type (140b) exposed by the trench (170) may be longer than the second length (L2) of the wells of the second conductivity type (130) exposed by the trench (170). For example, the second length (L2) of the wells of the second conductivity type (130) exposed by the trench (170) may be about 40% to 70% of the total depth of the trench (170), but is not limited thereto.
The second length (L2) region of the wells of the second conductivity type (130) exposed by the trench (170) may function as a channel region.
According to the aspect, a channel region may be formed, and the wells of the second conductivity type (130) is arranged to surround the lower edge region of the trench gate, so that electric field concentration may be prevented in the lower edge region of the trench gate.
Accordingly, the aspect may form the wells of the second conductivity type (130) to surround the lower edge region of the trench gate without a separate P-Shield process, and thus, there is a technical effect of preventing damage to the device and improving the reliability of the device by eliminating the need for a high-energy ion implantation process.
Next, referring to
Next, referring to
In addition, a source contact layer (145) may be formed on the ion implantation region of the second conductivity type (135) of the second conductive type, and a source electrode (not shown) may be formed on the source contact layer (145) in a subsequent process.
Next, an insulating layer (165) may be formed on the gate (160) and the gate insulating layer (155). The insulating layer (165) may be formed of an oxide film or a nitride film, but is not limited thereto.
In addition, a source electrode (not shown) may be formed on the source contact layer (145). The source electrode may be formed to cover the insulating layer (165). The source electrode may be formed of Al or Al alloy, but is not limited thereto. In addition, the source electrode may further include a barrier metal layer.
In addition, a drain electrode (115) may be formed on the lower side of the substrate (110). The drain electrode (115) may include, but is not limited to, Ti/Ni/Ag metal including a Ti layer, a Ni layer, and an Ag layer, or NiV/Ag, V (vanadium)/Ni/Ag, etc.
The power semiconductor device according to the aspect has a technical effect of preventing the electric field concentration in the lower edge area of the trench gate.
For example, in the aspect, the electric field concentration in the lower edge area of the trench gate may be prevented by arranging the wells of the second conductivity type to be in contact with the lower edge area of the trench gate.
In addition, the aspect may prevent the electric field concentration in the lower edge region of the trench gate without the P-Shield formation process, so that a high-energy ion implantation process is not required, thereby preventing damage to the device and simplifying the process.
In addition, the aspect has a technical effect that may improve the reliability of the device during high-speed switching.
For example, since the doping concentration of the second doped region of the first conductivity type disposed on the side of the trench gate is formed lower than the doping concentration of the first doped region of the first conductivity type, the saturation current decreases and the SCWT (Short Circuit Withstand Time) increases, so that the reliability of the device during high-speed switching may be improved.
Although the above has been described with reference to the embodiments of the present disclosure, those skilled in the art will easily understand that the present disclosure may be variously modified and changed within the scope that does not depart from the spirit and scope of the present disclosure described in the following patent claims. Thus, it is intended that the present disclosure covers the modifications and variations of the aspects provided they come within the scope of the appended claims and their equivalents.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2023-0186366 | Dec 2023 | KR | national |
| 10-2024-0087563 | Jul 2024 | KR | national |
