Power semiconductor device

Information

  • Patent Grant
  • D798832
  • Patent Number
    D798,832
  • Date Filed
    Friday, March 18, 2016
    8 years ago
  • Date Issued
    Tuesday, October 3, 2017
    7 years ago
  • US Classifications
    Field of Search
    • US
    • D13 182
    • 257 678000
    • 257 684000
    • 257 690000
    • 257 691000
    • 361 679010
    • 361 713000
    • 361 728000
    • 361 736000
    • 361 760000
    • 361 761000
    • 361 772000
    • 361 775000
    • 361 783000
    • 361 820000
    • 174 250000
    • 174 253000
    • 438 015000
    • 438 025000
    • 438 026000
    • 438 051000
    • 438 055000
    • 438 063000
    • 438 064000
    • CPC
    • H01L21/00
    • H01L2224/42
    • H01L2224/43
    • H01L2021/00
    • H01L2021/02
    • H01L2021/04
    • H01L21/4814
    • H01L21/4846
    • H01L21/4871
    • H01L21/67144
    • H01L23/02
    • H01L23/13
    • H01L23/14
    • H01L23/147
    • H01L2924/171
    • H01L2924/1711
    • H01L2924/1715
    • H01L2924/17151
    • H01L2924/181
    • H01L2924/1811
    • H01L2924/1815
    • H01L2924/19042
    • H01L2924/1905
    • H01L2224/08054
    • H01L23/58
    • H05B41/14
    • H02B6/4201
    • G02B6/4256
    • G02B6/4257
    • G02B6/4261
    • G02B6/4262
    • G02B6/428
    • G02B6/4281
    • H05K1/18
    • H05K1/181
    • H05K1/182
    • H05K1/026
  • International Classifications
    • 1303
    • Term of Grant
      15Years
Abstract
Description


FIG. 1 is a front, left side, bottom perspective view of a power semiconductor device, showing our new design;



FIG. 2 is a front, right side, top perspective view thereof;



FIG. 3 is a front view thereof;



FIG. 4 is a rear view thereof;



FIG. 5 is a left side view hereof;



FIG. 6 is a right side view thereof;



FIG. 7 is a top view thereof;



FIG. 8 is a bottom view thereof;



FIG. 9 is a cross sectional view taken along line 9-9 in FIG. 3; and,



FIG. 10 is another cross sectional view taken along line 10-10 in FIG. 3.


The broken lines in FIG. 4 illustrate unclaimed portions of the power semiconductor device and form no part of the claimed design.


Claims
  • The ornamental design for a power semiconductor device, as shown and described.
Priority Claims (1)
Number Date Country Kind
2015-021416 Sep 2015 JP national
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