Power semiconductor device

Information

  • Patent Grant
  • D790491
  • Patent Number
    D790,491
  • Date Filed
    Friday, March 18, 2016
    8 years ago
  • Date Issued
    Tuesday, June 27, 2017
    7 years ago
  • US Classifications
    Field of Search
    • US
    • D13 182
    • 257 678000
    • 257 684000
    • 257 690000
    • 257 691000
    • 361 679010
    • 361 713000
    • 361 728000
    • 361 736000
    • 361 760000
    • 361 761000
    • 361 772000
    • 361 775000
    • 361 783000
    • 361 820000
    • 174 250000
    • 174 253000
    • 438 015000
    • 438 025000
    • 438 026000
    • 438 051000
    • 438 055000
    • 438 063000
    • 438 064000
    • 438 106000
    • CPC
    • H01L21/00
    • H01L2224/42
    • H01L2224/43
    • H01L2021/00
    • H01L2021/02
    • H01L2021/04
    • H01L21/4814
    • H01L21/4846
    • H01L21/4871
    • H01L21/67144
    • H01L23/02
    • H01L23/13
    • H01L23/14
    • H01L23/147
    • H01L2924/171
    • H01L2924/1711
    • H01L2924/1715
    • H01L2924/17151
    • H01L2924/181
    • H01L2924/1811
    • H01L2924/1815
    • H01L2924/19042
    • H01L2924/1905
    • H01L2224/08054
    • H01L23/58
    • H05B41/14
    • H02B6/4201
    • G02B6/4256
    • G02B6/4257
    • G02B6/4261
    • G02B6/4262
    • G02B6/428
    • G02B6/4281
    • H05K1/14
    • H05K1/141
    • H05K1/142
    • H05K1/144
    • H05K1/18
    • H05K1/181
    • H05K1/182
    • H05K1/026
  • International Classifications
    • 1303
    • Term of Grant
      15Years
Abstract
Description


FIG. 1 is a front, left side, bottom perspective view of a power semiconductor device, showing our new design;



FIG. 2 is a front, right side, top perspective view thereof;



FIG. 3 is a front view thereof;



FIG. 4 is a rear view thereof;



FIG. 5 is a left side view thereof;



FIG. 6 is a right side view thereof;



FIG. 7 is a top view thereof;



FIG. 8 is a bottom view thereof;



FIG. 9 is a cross sectional view taken along line 9-9 in FIG. 3; and,



FIG. 10 is another cross sectional view taken along line 10-10 in FIG. 3.


The broken line showing of the power semiconductor device is included for the purpose of illustrating portions of the power semiconductor device and forms no part of the claimed design. The dot and dashed lines mean a boundary between the claimed portion and the non-claimed portion.


Claims
  • The ornamental design for a power semiconductor device, as shown and described.
Priority Claims (1)
Number Date Country Kind
2015-021417 Sep 2015 JP national
US Referenced Citations (36)
Number Name Date Kind
5347160 Sutrina Sep 1994 A
D364383 Yamada Nov 1995 S
D364384 Shimizu Nov 1995 S
D364385 Shimizu Nov 1995 S
D441726 Sofue May 2001 S
D476959 Yamada Jul 2003 S
D587662 Soutome Mar 2009 S
D589012 Soyano Mar 2009 S
D606951 Soyano Dec 2009 S
D653633 Soyano Feb 2012 S
D653634 Soyano Feb 2012 S
D686174 Soyano Jul 2013 S
D703625 Lim Apr 2014 S
D704670 Chen May 2014 S
D704671 Chen May 2014 S
D710317 Chen Aug 2014 S
D710318 Chen Aug 2014 S
D710319 Chen Aug 2014 S
D712853 Nakamura Sep 2014 S
D721048 Nakamura Jan 2015 S
D721340 Nakamura Jan 2015 S
D748595 Bertalan Feb 2016 S
D754084 Kawase Apr 2016 S
D759604 Yoneyama Jun 2016 S
D762185 Muehlensiep Jul 2016 S
D762597 Bertalan Aug 2016 S
D766851 Yoneyama Sep 2016 S
D767516 Yoneyama Sep 2016 S
D769834 Kawase Oct 2016 S
D772184 Soyano Nov 2016 S
D773412 Yoneyama Dec 2016 S
D773413 Yoneyama Dec 2016 S
D774479 Soyano Dec 2016 S
D775091 Edenharter Dec 2016 S
D775593 Edenharter Jan 2017 S
D776071 Edenharter Jan 2017 S