Power semiconductor device

Information

  • Patent Grant
  • D827590
  • Patent Number
    D827,590
  • Date Filed
    Friday, March 18, 2016
    8 years ago
  • Date Issued
    Tuesday, September 4, 2018
    6 years ago
  • US Classifications
    Field of Search
    • US
    • D13 133
    • D13 146
    • D13 147
    • D13 154
    • D13 155
    • D13 182
    • D13 184
    • D13 199
    • CPC
    • H01L21/0405
    • H01L21/18
    • H01L21/48
    • H01L23/13
    • H01L23/498
    • H01L23/66
    • H01L25/03
    • H01L29/045
    • H01L29/06
    • H01L29/1608
    • H01L29/63
    • H01L29/872
    • H05K3/34
    • H05K9/00
    • H04B10/02
  • International Classifications
    • 1303
    • Term of Grant
      15Years
Abstract
Description


FIG. 1 is a perspective view of the front, left and bottom sides of a power semiconductor device showing our new design;



FIG. 2 is a perspective view of the front, right and top sides thereof;



FIG. 3 is a front view thereof;



FIG. 4 is a rear view thereof;



FIG. 5 is a left side view thereof;



FIG. 6 is a right side view thereof;



FIG. 7 is a top view thereof;



FIG. 8 is a bottom view thereof;



FIG. 9 is an end view of cutting part at 9-9, with omitting the interior mechanism thereof; and,



FIG. 10 is an end view of cutting part at 10-10, with omitting the interior mechanism thereof.


The broken line showing of unclaimed portion of the power semiconductor device is for the purpose of illustrating environmental structure only and forms no part of the claimed design.


Claims
  • The ornamental design for the power semiconductor device, as shown and described.
Priority Claims (1)
Number Date Country Kind
2015-021418 Sep 2015 JP national
US Referenced Citations (7)
Number Name Date Kind
D357672 Terasawa Apr 1995 S
D467869 Ando Dec 2002 S
D469059 Ando Jan 2003 S
D475012 Ando May 2003 S
D476622 Ando Jul 2003 S
D476959 Yamada Jul 2003 S
D798832 Hayashida Oct 2017 S