Reference will now be made to the drawings to describe the present invention in detail.
The NPN transistor 240 includes a base electrode “b” connected to the control signal input terminal 210 via the second current limiting resistor 245, a emitter electrode “e” connected to ground, and a collector electrode “c” connected to the DC power supply 230 via the bias resistor 255.
The PNP transistor 260 includes a base electrode “b” connected to the control signal input terminal 210 via the first current limiting resistor 265, a collector electrode “c” connected to ground, and an emitter electrode “e” connected to the output terminal 220 via the discharging resistor 266.
The PMOS transistor 250 includes a gate electrode “G” connected to the collector electrode “c” of the NPN transistor 240, a source electrode “S” connected to the DC power supply 230, and a drain electrode “D” connected to the output terminal 220.
In order to apply the 5V voltage from the DC power supply 230 to the output terminal 220, a first control signal such as a high level 5V voltage is provided to the control signal input terminal 210 by an external circuit (not shown). Thus the NPN transistor 240 is switched on and the PNP transistor 260 is switched off. The gate electrode “G” of the PMOS transistor 250 is connected to ground via the activated NPN transistor 240. A voltage difference between the gate electrode “G” and the source electrode “S” of the PMOS transistor 250 is approximately equal to −5V, thus the PMOS transistor 250 is switched on. Accordingly, the 5V voltage from the DC power supply 230 is provided to the output terminal 220 via the activated PMOS transistor 250.
In order to suspend the supply of the 5V voltage from the DC power supply 230 to the output terminal 220, a second control signal such as a low level 0V voltage is provided to the control signal input terminal 210 by the external circuit. Thus the NPN transistor 240 is switched off and the PNP transistor 260 is switched on. The gate electrode “G” of the PMOS transistor 250 is connected to the DC power supply 230. A voltage difference between the gate electrode “G” and the source electrode “S” of the PMOS transistor 250 is approximately equal to 0V, thus the PMOS transistor 250 is switched off. Therefore, the 5V voltage from the DC power supply 230 cannot be provided to the output terminal 220. Electric charges stored in the load circuit which is connected to the output terminal 220 can be quickly discharged through the activated PNP transistor 260.
Because the power switching circuit 20 includes only the one DC power supply 230, the layout of the power switching circuit 20 is relatively simple.
When a control signal provided to a control signal input terminal 310 changes from a low level 0V voltage to a high level 5V voltage, the integrated circuit can prevent the NPN transistor 340 and a PMOS transistor 350 from being switched on too quickly. Thus a rush of current of a load circuit generated when a 5V voltage from a five volt DC power supply 330 is applied to an output terminal 320 can be reduced or even eliminated.
In various alternative embodiments, each of the NPN transistors 240, 340 can be replaced by an NMOS transistor, the PNP transistor 260 can be replaced by a PMOS transistor, and each of the PMOS transistors 250, 350 can be replaced by a PNP transistor.
It is to be further understood that even though numerous characteristics and advantages of preferred and exemplary embodiments have been set out in the foregoing description, together with details of the structures and functions of the embodiments, the disclosure is illustrative only; and that changes may be made in detail, especially in matters of arrangement of parts within the principles of present invention to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
| Number | Date | Country | Kind |
|---|---|---|---|
| 95115278 | Apr 2006 | TW | national |