Patent Application
20240097631
The present disclosure relates to analog microelectronics and more specifically to an operational amplifier having a low offset voltage and suitable for a wide range of common mode voltages and supply voltages due to its floating input stage.
The precision of operational amplifiers may be negatively affected by offset voltage. Offset voltage is a small voltage that appears at the output of an operational amplifier when zero volts is expected, such as when the inputs are equal voltage. The offset voltage can be due to mismatches in differential circuits, such as a differential pair. The mismatches may be between fabricated transistor elements (i.e., fingers) included within a single transistor or may be between a pair of different transistors in a differential pair. Increasing a physical device size (i.e., die area) of a transistor may be used to minimize mismatches and therefore reduce an offset voltage on average for the operational amplifier in production. Accordingly, a desire for high precision (i.e., low offset voltage) may contrast with a desire for small size. This contrast may be enhanced when high-voltage operation is desired because larger device sizes are required to handle the high-voltages. Chopping or trimming techniques may be used to reduce offset voltage but these techniques can add cost and complexity to an operational amplifier and therefore may not be suitable for some applications.
In some aspects, the techniques described herein relate to an input stage for an operational amplifier, the input stage including: a first gain stage including: a first field effect transistor coupled at a first gate to a positive input of the operational amplifier; and a second field effect transistor coupled at a second gate to a negative input of the operational amplifier; and a second gain stage including: a first bipolar transistor coupled at a first emitter to a negative output of the first gain stage and coupled at a first collector to a negative output of the input stage; and a second bipolar transistor coupled at a second emitter to a positive output of the first gain stage and coupled at a second collector to a positive output of the input stage.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein: a first base of the first bipolar transistor is directly connected to a second base of the second bipolar transistor, a connection between the first base and the second base forming a bias node for the second gain stage.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein: the bias node for the second gain stage is at a voltage that floats relative to a voltage of the first gain stage.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein the first gain stage is inverting, and the second gain stage is non-inverting.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein the second gain stage further includes: a first cascode transistor coupled between the first collector and the negative output of the input stage; and a second cascode transistor coupled between the second collector and the positive output of the input stage.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein: a first source of the first field effect transistor is directly coupled to a second source of the second field effect transistor, a connection between the first source and the second source forming a common source node of the first gain stage; a first drain of the first field effect transistor is coupled to a floating node of the first gain stage via first resistor; and a second drain of the second field effect transistor is coupled to the floating node of the first gain stage via a second resistor, the common source node and the floating node coupled to a floating supply.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein: the first field effect transistor and the second field effect transistor are PMOS transistors; and the input stage is configured to transmit a positive voltage (FP) from the common source node to the floating supply and receive a negative voltage (FN) from the floating supply at the floating node, the negative voltage (FN) lower than the positive voltage (FP) by a low-voltage supply voltage.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, further including a current source configured to supply current to the common source node from an upper rail.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein: the first field effect transistor and the second field effect transistor are NMOS transistors; and the input stage is configured to transmit a negative voltage (FN) from the common source node to the floating supply and receive a positive voltage (FP) from the floating supply at the floating node, the positive voltage (FP) higher than the negative voltage (FN) by a low voltage.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, further including a current source configured to drain current from the common source node to a lower rail.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein the second gain stage further includes an active load coupled to the first collector of the first bipolar transistor and the second collector of the second bipolar transistor.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein: the first bipolar transistor and the second bipolar transistor are NPN transistors; and the active load is coupled between an upper rail voltage (VDD) and the first bipolar transistor and the second bipolar transistor.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein: the first bipolar transistor and the second bipolar transistor are PNP transistors; and the active load is coupled between a lower rail voltage (GND) and the first bipolar transistor and the second bipolar transistor.
In some aspects, the techniques described herein relate to an input stage for the operational amplifier, wherein the active load includes: a third bipolar transistor coupled at a third emitter to a third resistor and coupled at a third collector to the negative output of the input stage, and a fourth bipolar transistor coupled at a fourth emitter to a fourth resistor and coupled at a fourth collector to the positive output of the input stage.
In some aspects, the techniques described herein relate to an operational amplifier including: an input stage including: a first differential pair including field effect transistors source terminals connected together at a common source node of the input stage, a voltage at the common source node corresponding to an input voltage of the operational amplifier; a pair of resistors coupled between drain terminals of the first differential pair of field effect transistors, the pair of resistors connected together at a floating node of the input stage; and a second different pair including bipolar transistors coupled at emitter terminals to the pair of resistors and connected together a common base node of the input stage; and a floating supply configured to receive the voltage at the common source node and generate a relative voltage at the floating node.
In some aspects, the techniques described herein relate to an operational amplifier, wherein the voltage at the common source node and the relative voltage at the floating node power the first differential pair with a low voltage range that floats according to the input voltage of the operational amplifier.
In some aspects, the techniques described herein relate to an operational amplifier, wherein the input voltage of the operational amplifier is in a high voltage range.
In some aspects, the techniques described herein relate to an operational amplifier, wherein the floating supply includes: an input transistor coupled at a gate terminal to the common source node to receive the voltage at the common source node; a voltage device coupled between a source terminal of the input transistor and the floating node to generate the relative voltage at the floating node that is offset from the voltage at the common source node; and a regulator circuit coupled configured to sense a conduction of the input transistor and based on the conduction, control a current at the floating node.
In some aspects, the techniques described herein relate to an operational amplifier, wherein: the input transistor is a NMOS transistor and the voltage at the common source node is a negative voltage that powers the first differential pair; and the regulator circuit includes a NMOS bias transistor configured to conduct current from the floating node to a lower rail of the operational amplifier based on the conduction of the input transistor.
In some aspects, the techniques described herein relate to an operational amplifier, wherein: the input transistor is a PMOS transistor and the voltage at the common source node is a positive voltage that powers the first differential pair; and the regulator circuit includes a PMOS bias transistor configured to conduct current to the floating node from an upper rail of the operational amplifier based on the conduction of the input transistor. The foregoing illustrative summary, as well as other exemplary objectives and/or advantages of the disclosure, and the manner in which the same are accomplished, are further explained within the following detailed description and its accompanying drawings.
The components in the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding parts throughout the several views.
The present disclosure describes an operational amplifier (opamp) that can achieve high precision without using complicated chopping circuitry and without added trimming processes to match devices. An input offset voltage (i.e., offset voltage) of an operational amplifier (i.e., opamp) may contribute to the precision of the opamp. The offset voltage (VOS) may be defined as a differential DC voltage between the positive and negative inputs of an opamp to produce zero voltage at the output. An opamp having an offset voltage closer to zero is more precise than an opamp having an offset voltage further from zero. The offset voltage may be described in terms of an average offset and an offset standard deviation for a population of devices manufactured in production. An opamp of the present disclosure may have an average offset voltage that is approximately zero (e.g., <2 μV) and a standard deviation (σ) on the order of 100 microvolt (e.g., 100 μV). A maximum offset voltage may be the offset voltage that a portion of a production lot is at or below. For example, an opamp of the present disclosure may have a maximum offset voltage that is less than one millivolt for 6σ (i.e., 99.99966%) of the population (i.e., −1 mV≤6σ≤+1 mV) and can be considered a low offset voltage in the descriptions of the implementations that follow.
Transistors in an amplifier that are matched may be desirable for achieving a low offset voltage. For example, transistors having the same (i.e., equal) threshold voltages (VT) may be considered matched. Matching can improve for a circuit having larger devices (e.g., transistors). For example, transistors having a larger die area (i.e., larger transistors) may have less mismatch than transistors having a smaller die area (i.e., smaller transistors). Mismatches may arise due to variations in production that cause differences in the transistors. For example, a transistor may include a plurality of fingers (i.e., channels) that operate together. Mismatches can occur when these fingers are not exactly the same size and therefore operate differently. These differences tend to average out as the number of fingers increases. Accordingly, achieving higher precision may require transistors having a larger number of fingers, and this may correspond to a larger die area. For example, transistors may have ≥40 fingers with each finger having a channel length of 2-3 microns (μm) and a channel width of 30-50 μm, and transistors having these dimensions can be considered large in the descriptions of implementations that follow.
Increasing the size of the transistors used in an opamp to improve a voltage offset may become impractical for higher voltages due to size constraints. For example, a maximum input voltage requirement for an opamp can place requirements on a minimum device size used for a transistor in the opamp in order to prevent damage. In particular, a high voltage transistor may require added separation between a drain and a gate. Thus, transistors designed for high voltages (i.e., HV transistors) can be larger than transistors designed for low voltages (i.e., LV transistors). A high voltage may be considered as a voltage above 5 volts and a low voltage may be considered as a voltage less than or equal to 5 volts. High voltage opamps may have an upper rail supply voltage (i.e., upper rail voltage) that is at or above the highest voltage expected at an input. For a rail-to-rail opamp a maximum input voltage may be approximately equal to the upper rail supply voltage (i.e., VDD) of the opamp. The present disclosure describes an opamp that (i) has a low offset voltage and/or (ii) can accept a range of input voltages that includes high voltages. For example, in implementations referred to in the disclosure, the opamp can have a lower rail voltage (i.e., VSS) that is equal to 0V (i.e., ground), an upper rail voltage (i.e., VDD) that is equal to 40V, and an input voltage (e.g., common mode voltage) that is a voltage in a range between the upper rail voltage and the lower rail voltage.
A high gain can make the input stage 400 the most significant source of offset voltage because the effects on the offset voltage from subsequent stages are reduced (e.g., divided) by the gain of the input stage 400. Accordingly, the offset voltage of the opamp 100 can be approximately equal to the offset voltage of the input stage 400.
A gain block, in a chain of gain stages, can be defined where a signal undergoes an inversion (i.e., a pole is introduced). The opamp of the present disclosure has an input stage 400 that includes a single gain block, referred to as the first gain block (G1). The first gain block (G1) is inverting (i.e., output is inverted), and therefore, the input stage 400 includes one pole in its frequency response. The stability of the opamp may be improved by providing feedback (i.e., compensation) to the locations of the signal inversion. Accordingly, the opamp 100 includes compensation capacitors 301, 302 to provide unity gain stability to the input stage 400. When the input stage 400 includes only one gain block (i.e., first gain block (G1)), as shown in the
The opamp 100 receives a positive input (INP) and a negative input (INN) (i.e., a differential input). The differential input (i.e., INP, INN) is coupled to two paths. In other words, the opamp is a two-path opamp. The two paths include a high-gain signal path and a low-gain signal path. The high-gain signal path (i.e., high-gain path) has a lower bandwidth (i.e., is slower) than the low-gain signal path (i.e., low-gain path), which has a higher bandwidth (i.e., is faster). The high-gain path includes the input stage 400 (i.e., first gain block (G1)), a third gain block (G3) and a fourth gain block (G4). The third gain block (G3) can be configured to generate a high-gain single-ended signal based on a differential output (OUTN, OUTP) of the first gain block (G1). The low gain path includes a second gain block (G2) and the fourth gain block (G4). The second gain block can be configured to generate a low-gain single-ended signal based on a differential input (INP, INN) of the operational amplifier. A high-gain single-ended signal at the output of the third gain block (G3) is combined with a low-gain single-ended signal at the output of the second gain block (G2) at a summing node (Σ). The fourth gain block (G4) can be configured to combine the high-gain single-ended signal and the low-gain single ended signal into a combined signal. The fourth gain block (G4) can also be configured to couple the combined signal to the output (OUT) of the opamp 100. The fourth gain block (G4) is inverting. Accordingly, a compensation capacitor 303 can be used to provide unity gain stability to the fourth gain block. The combined output signal (OUT) can have an overall frequency response that is based on a frequency response of the high-gain single-ended signal and a frequency response of the low-gain single-ended signal.
As shown in
The floating supply may provide a number of technical advantages. First, when the fixed supply includes high voltages, the floating supply can effectively shield the LV devices from the high voltages that could otherwise damage the devices. Second, the floating supply can provide a benefit by ensuring a constant bias to the LV devices despite variations in the fixed supply (i.e., supply). For example, the positive voltage (FP) and the negative voltage (FN) can be set to values corresponding to the positive input (INP) and/or negative input (INP) so that the LV transistors of the first gain block (G1) are in strong inversion for amplification.
As shown in
The first gain stage 410 shown in
The first gain stage 410 further includes a second field effect transistor 418 (i.e., second PMOS transistor). The second field effect transistor is coupled at a second gate terminal (i.e., second gate) to a negative input (INN) of the operational amplifier. The second field effect transistor is coupled at a second source terminal (i.e., second source) to the common source node 412. The second field effect transistor is coupled at a second drain terminal (i.e., second drain) to a positive output (OUT1P) of the first gain stage 410.
The first gain stage 410 is inverting because the negative output (OUT1N) of the first gain stage corresponds to the transistor coupled to the positive input (INP) and the positive output (OUT1P) of the first gain stage corresponds to the transistor coupled to the negative input (INN).
The first gain stage 410 shown in
The first gain stage 410 shown in
The first gain stage 410 can provide a low offset voltage for a few reasons. First, the size of the LV transistors in the first differential pair (M1, M2) can be made relatively large in a die area compared to a size of HV transistors in the same die area. Second, the discrete resistors of the first gain stage (R1, R2) can be made very accurately compared to other resistor types, such as active resistors.
The use of LV transistors may offer additional advantages as well. For example, LV transistors have a higher transconductance gain than HV transistors. Noise (e.g., thermal noise) at the input of the opamp may be reduced (e.g., divided) by the transconductance (gm) of the LV gain blocks. When the transconductance gain is higher this noise is lower (e.g., 70 nV/√Hz)@10 Hz). Further flicker noise may be lower (e.g., 1.6 μVpp for 0.1 Hz to 10 Hz) in LV transistors than high voltage transistors. Noise and voltage offset at the input of the opamp from later gain stages (blocks) may be reduced by the gain of the first gain stage 410. Accordingly, the first gain stage can be the main contributor to noise and offset voltage.
The gain of the first gain stage 410 may be limited, however, by a maximum resistance of the first resistor 421 and the second resistor 422. Increasing the resistance to increase gain also raises the drain voltage on the transistors. An increase of the drain voltage could change the operating states (e.g., saturation) of the first field effect transistor 416 and/or the second field effect transistor 418 for a low input voltage. Additionally, increasing the gain of the first gain stage can require an increase in a size of the compensation capacitors 301, 302 used to stabilize the output of the input stage. The disclosed input stage for an operational amplifier can create an effective gain for the input stage using a second gain stage that allows for improved noise performance without the drawbacks described above.
The common source node 412 and the floating node 414 can be coupled to a floating supply 500. For the implementation shown in
The voltage at the common source node is related to the input voltage of the opamp. In other words, the voltage at the common source node (i.e., FP) may be the common mode voltage (VCM), as shown in
VCM=min(INP,INN)+VGS (1)
As shown in
The second gain stage 420 includes a first bipolar transistor 431. The first bipolar transistor 431 is coupled at a first emitter terminal (i.e., first emitter) to a negative output (OUT1N) of the first gain stage 410. The first bipolar transistor 431 is coupled at a first base terminal (i.e., first base) to a bias node (i.e., negative bias node 442). The first bipolar transistor 431 is coupled at a first collector terminal (i.e., first collector) to a negative output (OUTN) of input stage 400.
The second gain stage 420 further includes a second bipolar transistor 432 that is coupled at a second emitter terminal (i.e., second emitter) to a positive output (OUT1P) of the first gain stage 410. The second bipolar transistor 432 is coupled at a second base terminal (i.e., second base) to the negative bias node 442 The second bipolar transistor 432 is coupled at a second collector terminal (i.e., second collector) to a positive output (OUTP) of the input stage 400.
The second gain stage 420 is non-inverting because the negative output (OUT1N) of the first gain stage 410 is corresponds to the negative output (OUTN) of the input stage 400 and the positive output (OUT1P) of the first gain stage 410 corresponds to the positive output (OUTP) of the input stage.
The first bipolar transistor 431 and the second bipolar transistor 432 have their base terminals coupled together at a negative bias node 442. The negative bias node 442 can be coupled to a bias circuit 445. The bias circuit can be configured to receive a voltage from the first gain stage 410 and to generate a negative bias voltage (biasn) at the negative bias node 442. The negative bias voltage can float relative to a voltage of the first gain stage 410. For example, the negative bias voltage (biasn) may correspond to the negative voltage (FN) at the floating node 414 of the first gain stage 410. In particular the negative bias voltage (biasn) may be greater than the positive output (OUT1P) and the negative output (OUT1N) of the first gain stage 410.
The active load 450 includes a third bipolar transistor 451 (Q3). The third bipolar transistor 451 is coupled at a third collector terminal (i.e., third collector) to a negative output (OUTN) of the input stage 400. The third bipolar transistor 451 is coupled at a third base terminal (i.e., third base) to a bias node (i.e., positive bias node 443). The third bipolar transistor 451 is coupled at a third emitter terminal (i.e., third emitter) to a third resistor (R3).
The active load 450 includes a fourth bipolar transistor 452 (Q4). The fourth bipolar transistor 452 is coupled at a fourth collector terminal (i.e., fourth collector) to a positive output (OUTP) of the input stage 400. The fourth bipolar transistor 452 is coupled at a fourth base terminal (i.e., fourth base) to the positive bias node 443. The fourth bipolar transistor 452 is coupled at a fourth emitter terminal (i.e., fourth emitter) to a fourth resistor (R4). The third resistor and the fourth resistors can lower a noise contribution of the active load and can lower a current mismatch between the positive/negative sides of the second differential pair.
The third bipolar transistor 451 and the fourth bipolar transistor 452 have their base terminals coupled together at a positive bias node 443. The second differential pair may be referred to as a common-base amplifier. The positive bias node 443 can be coupled to a common mode feedback circuit 440.
The common mode feedback (CMFB) circuit can be configured to receive a voltage from the positive output (OUTP) and the negative output (OUTN) of the input stage and to generate a positive bias voltage (biasp) on the gates of the third and fourth bipolar transistors, which are P-type in the implementation shown, in order to bias the transistors so that a common mode of the output (OUTN, OUTP) of the input stage is maintained at a particular common mode voltage. The positive bias voltage may be a voltage that does not float (e.g., constant voltage). The particular common mode voltage at the output of the input stage 400 may be selected based the requirements of a subsequent gain block in the opamp.
For the implementation shown in
For the implementation shown in
For the implementation shown in
The floating supply voltages protect the field effect transistors of the first gain stage 410 from the rail voltages that could be damaging to the low-voltage field effect transistors. While the bipolar transistors of the second gain stage 420 can be configured to handler higher voltages than the field effect transistors of the first gain stage 410, in some implementations the rail voltage (VDD or VSS) and the output voltage (OUTN or OUTP) of the input stage cause a voltage drop that is high enough to cause damage to the bipolar transistors. For these implementations, cascode stages may be used to drop voltages while repeating current so that the voltages experienced by the bipolar transistors are not damaging and the current at the bipolar transistors are substantially unchanged by the cascode stages.
As shown in
As shown in
As shown in
As shown in
As shown in
As shown in
FN=FP−VGS−VS (2)
In the equation above, VGS is the gate to source voltage of the input transistor 510 and VS is the voltage of the voltage source, which can be in the LV range (e.g., 3-5V). The positive voltage (FP) is received at the floating supply 500 from the input stage 400. The negative voltage (FN) is transmitted from the floating supply 500 to the floating node of the first gain stage 410.
The floating supply 500 further includes a control circuit 520 configured to sense a voltage corresponding to the positive voltage (FP) and to output a signal according to a difference between the positive voltage (FP) and a reference voltage (VREF). The output signal controls a regulation device 570 so that the input transistor may be biased properly (e.g., conducting) at voltages near the lower rail voltage.
The control circuit 520 includes a bias resistor 525 coupled between the drain of the input transistor 510 and the upper rail voltage (VDD). The bias resistor generates a voltage based on the positive voltage (FP) coupled to the input transistor 510. The control circuit further includes a reference source 530 to generate the reference voltage (VREF) and an amplifier 540 configured to compare the voltage on the bias resistor 525 to the reference source 530 voltage (VREF) and output a signal to control a regulation transistor 571 of the regulation device 570. The regulation transistor 571 can be turned fully ON to couple the floating node 414 to the lower rail voltage (VSS) (e.g., ground) when the input voltage (FP) is too low to properly control the negative voltage (FN). In other words, the regulation transistor can be turned ON to pull the negative voltage (FN) towards the lower rail voltage (VSS) when the input transistor turns OFF. Otherwise, the negative voltage (FN) would float because the input transistor and the voltage source (VS) do not control this sufficiently when the input transistor 510 turns OFF. Further the regulation transistor may operate as a current source that can sink current from the floating node to ground. In a possible implementation, the floating supply 500 further includes a Zener diode coupled between the gate of the regulation transistor 571 and the lower rail voltage (VSS). The Zener diode 572 is configured to clamp a maximum voltage that can appear on the regulation transistor 571 to protect it from damage.
As shown in
The first implementation of the floating supply (i.e.,
As shown in
FP=FN+VGS+VS (3)
In the equation above, VGS is the gate to source voltage of the input transistor 510 and VS is the voltage of the voltage source, which can be in the LV range (e.g., 3-5V). The positive voltage (FP) is received at the floating supply 500 from the input stage 400. The negative voltage (FN) is transmitted from the floating supply 500 to the floating node of the first gain stage 410.
As shown in
In the specification and/or figures, typical embodiments have been disclosed. The present disclosure is not limited to such exemplary embodiments. For example, variations may be conceived by replacing PMOS transistors with NMOS transistors in complementary circuits, and vice versa. Additionally, various implementations of the voltage sources or the current sources shown in the circuits are within the scope of the present disclosure.
The use of the term “and/or” includes any and all combinations of one or more of the associated listed items. The figures are schematic representations and so are not necessarily drawn to scale. Unless otherwise noted, specific terms have been used in a generic and descriptive sense and not for purposes of limitation.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. Methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present disclosure. As used in the specification, and in the appended claims, the singular forms “a,” “an,” “the” include plural referents unless the context clearly dictates otherwise. The term “comprising” and variations thereof as used herein is used synonymously with the term “including” and variations thereof and are open, non-limiting terms. The terms “optional” or “optionally” used herein mean that the subsequently described feature, event or circumstance may or may not occur, and that the description includes instances where said feature, event or circumstance occurs and instances where it does not. Ranges may be expressed herein as from “about” one particular value, and/or to “about” another particular value. When such a range is expressed, an aspect includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations, by use of the antecedent “about,” it will be understood that the particular value forms another aspect. It will be further understood that the endpoints of each of the ranges are significant both in relation to the other endpoint, and independently of the other endpoint.
Some implementations may be implemented using various semiconductor processing and/or packaging techniques. Some implementations may be implemented using various types of semiconductor processing techniques associated with semiconductor substrates including, but not limited to, for example, Silicon (Si), Gallium Arsenide (GaAs), Gallium Nitride (GaN), Silicon Carbide (SiC) and/or so forth.
While certain features of the described implementations have been illustrated as described herein, many modifications, substitutions, changes and equivalents will now occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the scope of the implementations. It should be understood that they have been presented by way of example only, not limitation, and various changes in form and details may be made. Any portion of the apparatus and/or methods described herein may be combined in any combination, except mutually exclusive combinations. The implementations described herein can include various combinations and/or sub-combinations of the functions, components and/or features of the different implementations described.
It will be understood that, in the foregoing description, when an element is referred to as being on, connected to, electrically connected to, coupled to, or electrically coupled to another element, it may be directly on, connected or coupled to the other element, or one or more intervening elements may be present. In contrast, when an element is referred to as being directly on, directly connected to or directly coupled to another element, there are no intervening elements present. Although the terms directly on, directly connected to, or directly coupled to may not be used throughout the detailed description, elements that are shown as being directly on, directly connected or directly coupled can be referred to as such. The claims of the application, if any, may be amended to recite exemplary relationships described in the specification or shown in the figures.
As used in this specification, a singular form may, unless definitely indicating a particular case in terms of the context, include a plural form. Spatially relative terms (e.g., over, above, upper, under, beneath, below, lower, and so forth) are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. In some implementations, the relative terms above and below can, respectively, include vertically above and vertically below. In some implementations, the term adjacent can include laterally adjacent to or horizontally adjacent to.
This application is a national stage entry of PCT Application No. PCT/US2022/07122 filed on Mar. 14, 2022 which claims the benefit of U.S. Provisional Application No. 63/200,551, filed on Mar. 15, 2021. The applications are hereby incorporated by reference, each in its entirety.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/US2022/071122 | 3/14/2022 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 63200551 | Mar 2021 | US |
