Patent Application
20250204233
The present disclosure claims priority to Chinese Application NO. 202210210833.5 filed in the China National Intellectual Property Administration on Mar. 4, 2022 and entitled “NANO ZINC OXIDE SOLUTION, PREPARATION METHOD THEREFOR, NANO ZINC FILM, PHOTOELECTRIC DEVICE, AND DISPLAY APPARATUS”, the content of which is incorporated herein by reference in its entirety.
The present disclosure relates to a field of display technologies, and more particularly, to a preparation method of a nano zinc oxide solution, a photoelectric device, and a display apparatus.
Photoelectric devices refer to devices made according to the photoelectric effect, which have a wide range of applications in new energy, sensing, communication, display, lighting and other fields, such as solar cells, photodetectors, organic electroluminescent devices (OLED) or quantum dot electroluminescent devices (QLED). The structure of traditional photoelectric devices mainly includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer (i.e. an electron transport film), an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode and the electrons generated by the cathode of the optoelectronic device move, inject into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules to finally produce visible light.
Quantum dots (QD) are semiconductor clusters with size ranging from 1 to 10 nm. Due to the quantum size effect, they have photoelectronic properties with tunable band gap, and can be applied to light-emitting diodes, solar cells, biofluorescent labeling and other fields. As an inorganic semiconductor material, quantum dots have a broad application prospect in the field of photoluminescence due to their unique photoluminescence and electroluminescence characteristics, including narrow luminescence spectrum, high color purity and good optical stability. Quantum dot light-emitting diode (QLED) is a device that uses colloidal quantum dots as a light-emitting layer. The light-emitting layer is introduced between different conductive materials to obtain light of the required wavelength. It has the advantages of high color gamut, self-luminescence, low starting voltage, fast response speed, etc. It is used in various display devices such as mobile phones, computers, and televisions, and has broad development prospects. The films prepared from zinc oxide (ZnO) nanoparticles solution have a wide band gap and relatively high electron mobility and stability, so semiconductor ZnO films are one of the best choices for preparing QLED electron transport layer materials. The ZnO electron transport layer of QLED is usually prepared by solution method. In order to ensure its film-forming quality, it is crucial to prepare ZnO nanoparticles with good dispersion to improve the performance of QLED.
As illustrated in
Therefore, how to reduce the amount of —OH on the surface of ZnO NPs solution, inhibit the agglomeration of ZnO NPs, and improve the stability of ZnO NPs solution has become an urgent problem to be solved in the industry.
In view of this, the present disclosure provides a preparation method of a nano zinc oxide solution, a photoelectric device, and a display apparatus.
According to a first aspect, the present disclosure provides a preparation method of a nano zinc oxide solution, comprising:
Alternatively, the acid gas is selected from at least one of carbon dioxide, hydrogen sulfide, and sulfur dioxide; and/or
Alternatively, the acid gas comprises a mixed gas of H2S and N2, a volume ratio of H2S and N2 is 1: (10-1000), and a water content of the acid gas is less than 100 ppm.
Alternatively, the acid gas comprises a mixed gas of CO2 and N2, a volume ratio of CO2 and N2 is 1: (10-1000), and a water content of the acid gas is less than 100 ppm.
Alternatively, the third solvent is a mixture of a dispersant and a water absorbent; the dispersant is selected from one or more of monohydric alcohols with 2-5 carbon atoms or monoether compounds with 2-5 carbon atoms, and the water absorbent is a polyol compound.
Alternatively, the volume ratio of the dispersant to the water absorbent is 100: (1-30); and/or
Alternatively, the first reactant solution is mixed with a first precipitant to perform the first precipitation treatment, and the first precipitant is selected from at least one of ethyl acetate, butyl formate, and butyl butyrate.
Alternatively, the solid-liquid separation treatment is realized by centrifugation, wherein a rotation speed of centrifugation is greater than 6000 rpm, and a time period of centrifugation greater than 2 min; and/or
Alternatively, the second precipitation treatment is mixed with a second precipitant into the upper solution to perform the second precipitation treatment, and the second precipitant is selected from at least one of acetone, n-hexane, and n-heptane.
Alternatively, the mixing the alkali precursor solution and the zinc precursor solution to obtain the first reactant solution, comprises:
Alternatively, the alkali selected from at least one of KOH, NaOH, LiOH, and TMAH; and/or
Alternatively, a molar ratio of the alkali to the zinc salt is (1.1-1.5): 1; and/or
Alternatively, the nano zinc oxide solution comprises nano zinc oxide, and the ratio of the number of —OH ligands to the number of —COOH ligands on the surface of nano zinc oxide is less than or equal to 1%.
Alternatively, the mixing the alkali precursor solution with the zinc precursor solution to obtain the first reactant solution, comprises: dissolving lithium hydroxide in ethanol to prepare an alkali precursor solution;
Alternatively, the mixing the alkali precursor solution with the zinc precursor solution to obtain the first reactant solution, comprises: dissolving lithium hydroxide in ethanol to prepare an alkali precursor solution; dissolving zinc acetate in dimethyl sulfoxide to prepare a zinc precursor solution; mixing the alkali precursor solution with the zinc precursor solution, and stirring in N2 atmosphere to obtain the first reactant solution;
A photoelectric device, comprising:
Alternatively, the photoelectric device further comprises a hole transport layer, which is located between the light-emitting layer and the anode;
Alternatively, the photoelectric device further comprising a hole injection layer between the hole transport layer and the anode;
Alternatively, a material of the light-emitting layer is selected from one or more of II-VI compounds, III-V compounds and I-III-VI compounds; the II-VI compound is selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSe, ZnTeS, CdSeS, CdSeTe CdTeS, CdZnSeS, CdZnSe, and CdZnSeTe; the III-V compound is selected from InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP, and InAlNP; and the I-III-VI compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; and/or
A display apparatus, comprising the photoelectric device.
In order to more clearly explain the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings required in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those skilled in the field, without paying any creative work, other drawings can be obtained based on these drawings.
Technical solutions in embodiments of the present disclosure will be clearly and completely described below in conjunction with drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the field without creative work fall within the protection scope of the present disclosure.
The embodiments of the present disclosure provide a quantum photoelectric device, a manufacturing method thereof and a display panel. Detailed descriptions are given below. It should be noted that the order in which the following embodiments are described is not intended to limit the preferred order of the embodiments.
Additionally, in the description of the present disclosure, the term “comprising/including” means “comprising/including but not limited to.” Various embodiments of the present disclosure may be presented in a form of range. It should be understood that the description in the form of range is merely for convenience and brevity, and should not be construed as a hard limitation on the scope of the disclosure. Accordingly, it should be considered that the recited range description has specifically disclosed all possible subranges, as well as a single numerical value within that range. For example, it should be considered that a description of a range from 1 to 6 has specifically disclosed subranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and a single number within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Whenever a range of values is indicated herein, it is meant to include any recited number (fraction or integer) within the indicated range.
In the present disclosure, the term “and/or” is used to describe the association of associated objects, and means that there may be three relationships, for example, “A and/or B” may refer to three cases: the first case refers to the presence of A alone; the second case refers to the presence of both A and B; the third case refers to the presence of B alone, where A and B may be singular or plural.
In the present disclosure, the term “at least one” refers to one or more, and “a plurality of/multiple” refers to two or more. The terms “at least one”, “at least one of the followings”, or the like, refer to any combination of the items listed, including any combination of the singular or the plural items. For example, “at least one of a, b, or c” or “at least one of a, b, and c” may refer to: a, b, c, a-b (i.e., a and b), a-c, b-c, or a-b-c, where a, b, and c may be single or plural.
Currently, the existing ZnO nano solutions are generally synthesized by zinc salt and alkali solution methods. During the synthesis, Zn—OH clusters are formed, and the —OH on the surfaces of different clusters condenses to form nano zinc oxide (ZnO NPs) particles. Therefore, there are many —OH ligands and carboxyl (—COOH) ligands suspended on the surface of the formed ZnO NPs. After being prepared into ZnO NPs solution, there are some ZnO NPs with more —OH hanging on the surface, which makes it easy for them to continue to condense with other ZnO NPs to form larger ZnO NPs particles, which makes the dispersibility of ZnO NPs solution poor and reduces the preservation stability of ZnO NPs. Moreover, these larger particles of ZnO NPs do not meet the requirements of solution processing, which will lead to poor film formation quality and affect the device performance.
Therefore, how to reduce the amount of —OH on the surface of ZnO NPs solution, inhibit the agglomeration of ZnO NPs, and improve the stability of ZnO NPs solution has become an urgent problem to be solved in the industry.
Based on this, the present disclosure provides a preparation method of a nano zinc oxide solution as described below, in which the amount of surface —OH can be reduced by treating the ZnO NPs solution with an acid gas in the synthetic cleaning of zinc oxide. The proportion of the surface —OH ligand and the number of —COOH ligand on the surface of the nano zinc oxide is less than or equal to 1%, which can effectively prevent the condensation of surface hydroxyl groups in the storage of the ZnO NPs solution at room temperature, inhibit the agglomeration of the ZnO NPs solution, make the size of the ZnO NPs more uniform, and make the stability of the ZnO NPs solution higher. At the same time, the film formation quality of ZnO NPs is improved, and the performance of the device is improved.
In one embodiment, as shown in
In the present embodiment, mixing the alkali precursor solution and the zinc precursor solution to obtain the first reactant solution; performing a first precipitation treatment on the first reactant solution to obtain the precipitation product; mixing the precipitation product with the third solvent to obtain the intermediate mixed solution; introducing acid gas into the intermediate mixed solution, and performing solid-liquid separation treatment to obtain the upper solution; performing a second precipitation treatment on the upper solution to obtain a target precipitate, and mixing the target precipitate with a fourth solvent to obtain a nano zinc oxide solution. The preparation method can reduce the amount of surface —OH by treating the ZnO NPs solution with acid gas in the synthetic cleaning of zinc oxide. And the proportion of the number of surface —OH ligands and —COOH ligands on the surface of the nano zinc oxide is less than or equal to 1%, can effectively prevent the condensation of surface hydroxyl groups in the storage of the ZnO NPs solution at room temperature, inhibit the agglomeration of the ZnO NPs, make the size of the ZnO NPs more uniform, and the stability of the ZnO NPs solution higher. At the same time, the film formation quality of ZnO NPs is improved, and the performance of the device is improved.
In one embodiment, as shown in
In the S11, the alkali selected from at least one of KOH (potassium hydroxide), NaOH (sodium hydroxide), LiOH (lithium hydroxide), and TMAH (tetramethylammonium hydroxide).
The first solvent is selected from at least one of methanol, ethanol, and ethylene glycol monomethyl ether.
The concentration of that alkali precursor solution ranges between 0.01 and 0.5 mM.
In the S12, the zinc salt is selected from at least one of zinc acetate, zinc chloride, and zinc citrate.
The second solvent is selected from at least one of dimethyl sulfoxide (DMSO), N,N-dimethylformamide (DMF), and tetrahydrofuran (THF).
The concentration of that zinc precursor solution ranges between 0.01 and 0.5 mM.
In the S13, after mixing the alkali precursor solution and the zinc precursor solution, quickly stirring for 1-5 h at a temperature of about 25° C. in an inert gas atmosphere to obtain the first reactant solution.
A molar ratio of the alkali to the zinc salt is (1.1-1.5): 1, and a volume ratio of the first solvent to the second solvent is 1:1.
In one embodiment, in the S2, the first reactant solution is mixed with a first precipitant to perform the first precipitation treatment to obtain the precipitation product.
The first precipitant is selected from at least one of ethyl acetate, butyl formate, and butyl butyrate.
In one embodiment, in the S3, the third solvent is a mixture of a dispersant and a water absorbent, and a volume ratio of the dispersant to the water absorbent is 100:(1-30). In order to facilitate the dispersion of ZnO NPs, the dispersant is selected from at least one of methanol, ethanol, and ethylene glycol monomethyl ether. The water absorbent is selected from at least one of glycerol and diglycerol, and is configured to adsorbing water generated in the reaction and promoting the reaction to form a stable ZnO NPs surface ligand.
In one embodiment, in the S4, the introducing acid gas into the intermediate mixed solution, comprises: introducing acid gas into the intermediate mixed solution at a flow rate of 10-15 mL/min, and performing gas treatment for a preset time. Wherein a preset time is 10-120 min.
The acid gas is selected from at least one of carbon dioxide (CO2), hydrogen sulfide (H2S), and sulfur dioxide (SO2).
In some embodiments, the acid gas comprises a mixed gas of H2S and N2 (nitrogen), a volume ratio of H2S and N2 is 1: (10-1000), and a water content of the acid gas is less than 100 ppm.
In some embodiments, the acid gas comprises a mixed gas of CO2 and N2 (nitrogen), a volume ratio of CO2 and N2 is 1: (10-1000), and a water content of the acid gas is less than 100 ppm.
In one embodiment, in the S4, the performing solid-liquid separation treatment to obtain the upper solution, comprises: after introducing acid gas into the intermediate mixed solution and performing gas treatment for a preset time, performing solid-liquid separation treatment on the intermediate mixed solution to remove zinc oxide precipitated in the intermediate mixed solution, and then obtain the upper solution.
The solid-liquid separation treatment is realized by centrifugation. Illustratively, a rotation speed of centrifugation is greater than 6000 rpm, and a time period of centrifugation time greater than ≥2 min.
In this embodiment, as shown in
In one embodiment, in the S5, the performing the second precipitation treatment on the upper solution to obtain the target precipitate, and mixing the target precipitate with v fourth solvent to obtain the nano zinc oxide solution, comprises: adding the second precipitant into the upper solution for the second precipitation treatment to obtain the target precipitate, and mixing the target precipitate with the fourth solvent to obtain a nano zinc oxide solution.
The second precipitant is selected from at least one of acetone, n-hexane, and n-heptane.
The fourth solvent is alcohol or ether, and is selected from at least one of ethanol, butanol, and ethylene glycol monomethyl ether.
Based on the same idea, in one embodiment, the present also provides a nano zinc oxide solution, which is prepared by the preparation method of the nano zinc oxide solution. The nano zinc oxide solution comprises nano zinc oxide, and the ratio of the number of —OH ligands to the number of —COOH ligands on the surface of nano zinc oxide is less than or equal to 1%.
In this embodiment, in the preparation process of nano-zinc oxide solution, the acid gas is used to treat the ZnO NPs solution, which reduces the amount of —OH on the surface. And the proportion of the number of surface —OH ligands and —COOH ligands on the surface of the nano zinc oxide is less than or equal to 1%, can effectively prevent the condensation of surface hydroxyl groups in the storage of the ZnO NPs solution at room temperature, inhibit the agglomeration of the ZnO NPs, make the size of the ZnO NPs more uniform, and the stability of the ZnO NPs solution higher. At the same time, the film formation quality of ZnO NPs is improved, and the performance of the device is improved.
Based on the same idea, in one embodiment, the present also provides a nano zinc oxide film, which is obtained by using the nano zinc oxide solution prepared by the preparation method of the nano zinc oxide solution or the nano zinc oxide solution, forming a precursor film on a substrate, and drying.
Based on the same idea, as shown in
In the S51, the nano zinc oxide (ZnO NPs) solution is obtained by adopting the preparation method of the nano zinc oxide solution described in any of the above embodiments.
In the S52, in the preparation process of nano zinc oxide solution, the acid gas is used to treat the ZnO NPs solution, which reduces the amount of —OH on the surface. And the proportion of the number of surface —OH ligands and —COOH ligands on the surface of the nano zinc oxide is less than or equal to 1%, can effectively prevent the condensation of surface hydroxyl groups in the storage of the ZnO NPs solution at room temperature, inhibit the agglomeration of the ZnO NPs, make the size of the ZnO NPs more uniform, and the stability of the ZnO NPs solution higher. Using the ZnO NPs solution with higher stability to form nano zinc oxide film can improve the quality of ZnO NPs film formation, so that QLED electron transport layer can be prepared with ZnO NPs films, which can improve the performance of devices.
The type of the placode is not limited. In an embodiment, the placode is a cathode substrate, and an electron transport layer including the nano zinc oxide film is arranged on the cathode. Among them, the substrate can be a commonly used substrate, for example, it can be a rigid substrate, and a material is glass. It can also be a flexible substrate made of polyimide. A material of the cathode can be, for example, one or more of metal, carbon material, and metal oxide. And the metal can be, for example, one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg. The carbon material can be, for example, one or more of graphite, carbon nanotubes, graphene, and carbon fibre. The metal oxides can be doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, and also include composite electrodes with metal sandwiched between doped or undoped transparent metal oxides. The composite electrodes include, but are not limited to, one or more of AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, ZnO/Ag/ZnO, ZnO/Al/ZnO, TiO2/Ag/TiO2, TiO2/Al/TiO2, ZnS/Ag/ZnS, ZnS/Al/ZnS, TiO2/Ag/TiO2, and TiO2/Al/TiO2. In another embodiment, the placode comprises an anode and a light-emitting layer which are stacked, and a nano zinc oxide film is prepared by the nano zinc oxide solution prepared by the preparation method in the above embodiment of the application, and an electron transport layer prepared by the nano zinc oxide film is arranged on the luminescent layer. If the photoelectric device also includes other functional layers, correspondingly, other functional layers can also be included on the substrate.
Specifically, the nano zinc oxide solution can be arranged on a placode by a solution method, a precursor film is formed on the placode, and the nano zinc oxide film is obtained by drying treatment, and then the electron transport layer is prepared from the nano zinc oxide film. Solution method includes, but is not limited to, spin coating, drop coating, coating, ink-jet printing, blade coating, dipping and pulling, soaking, spraying, roller coating, evaporation or casting.
The drying treatment in this present can be an annealing process. Among them, the annealing process includes all the treatment processes that can make the wet film get higher energy, thus changing from the wet film state to the dry state. For example, the annealing process can only refer to the heat treatment process, that is, the wet film is heated to a specific temperature and then kept for a specific time to fully volatilize the solvent in the wet film. Another example is the annealing process, which can also include a heat treatment process and a cooling process in sequence, that is, the wet film is heated to a specific temperature, then kept for a specific time to fully volatilize the solvent in the first wet film, and then cooled at an appropriate speed to eliminate residual stress and reduce the risk of layer deformation and cracks in the dry hole transport film.
The thickness of the finally formed electron transport layer can be controlled and adjusted by controlling and adjusting conditions such as solution concentration used in the solution method. The thickness of the electron transport layer can range from 10 to 70 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, or 70 nm, etc. Taking spin coating as an example, the thickness of electron transport layer can be controlled by adjusting the concentration of solution, spin coating speed and spin coating time.
Based on the same idea, in one embodiment, as shown in
The cathode 70 is made of a material known in the field for the cathode, and the anode 20 is made of a material known in the field for the anode. A material of the cathode 70 and the anode 20 can be, for example, one or more of metal, carbon material, and metal oxide. And the metal can be, for example, one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg. The carbon material can be, for example, one or more of graphite, carbon nanotubes, graphene, and carbon fibre. The metal oxides can be doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, and also include composite electrodes with metal sandwiched between doped or undoped transparent metal oxides. The composite electrodes include, but are not limited to, one or more of AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, ZnO/Ag/ZnO, ZnO/Al/ZnO, TiO2/Ag/TiO2, TiO2/Al/TiO2, ZnS/Ag/ZnS, ZnS/Al/ZnS, TiO2/Ag/TiO2, and TiO2/Al/TiO2. The thickness of the cathode 70 is a cathode thickness known in the field, and can be, for example, 10 nm to 200 nm, such as 10 nm, 35 nm, 50 nm, 80 nm, 120 nm, 150 nm, or 200 nm, etc. The thickness of the anode 20 is known in the field, and may be, for example, 10 nm to 200 nm, such as 10 nm, 50 nm, 80 nm, 100 nm, 120 nm, 150 nm, or 200 nm, etc.
The electron transport layer 60 is located on the quantum dot light-emitting layer 50, and the electron transport layer 60 is the nano zinc oxide film. The preparation method of the nano zinc oxide film can refer to the relevant description above, and will not be repeated here.
The light-emitting layer 50 may be a quantum dot light-emitting layer, and the photoelectric device 100 may be a quantum dot photoelectric device. The thickness of the light-emitting layer 50 can be in the range of the thickness of the light-emitting layer in the quantum dot photoelectric device known in the field, for example, it can be 5 nm to 100 nm, such as 5 nm, 10 nm, 20 nm, 50 nm, 80 nm, 100 nm, or 60-100 nm.
Among them, a material of the quantum dot light-emitting layer is a quantum dot known in the field for the quantum dot light-emitting layer. For example, one of red quantum dots, green quantum dots, and blue quantum dots. Quantum dots can be selected from, but not limited to, at least one of single structure quantum dots and core-shell structure quantum dots. For example, the quantum dots can be selected from but not limited to at least one of II-VI compounds, III-V compounds and I-III-VI compounds. The II-VI compound is selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSe, and CdZnSeTe. The III-V compound is selected from InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP, and InAlNP. The I-III-VI compound is selected from at least one of CuInS2, CuInSe2 and AgInS2.
Referring to
Referring to
Referring to
It can be understood that in addition to the above functional layers, the photoelectric device 100 can also be provided with some functional layers which are commonly used in photoelectric devices and are helpful to improve the performance of photoelectric devices, such as electron blocking layer, hole blocking layer, electron injection layer, and interface modification layer, etc. It can be understood that a material and thickness of each layer of the photoelectric device 100 can be adjusted according to the light emission requirements of the photoelectric device 100.
In some embodiments, the photoelectric device 100 is a quantum dot light-emitting diode, and the photoelectric device 100 can be a quantum dot light-emitting diode with an upright structure or an inverted structure. The substrate of the quantum dot light-emitting diode with positive structure is connected with the anode, and the structure can be glass substrate-anode-(hole injection layer)-hole transport layer-quantum dot light-emitting layer-electron transport layer-cathode. The substrate of quantum photoelectric device with inverted structure is connected with the cathode, and its structure can be glass substrate-cathode-electron transport layer-quantum dot light-emitting layer-hole transport layer-(hole injection layer)-anode. Among them, the hole injection layer is an unnecessary option, and the quantum dot light-emitting diode structure may or may not include the hole injection layer.
Based on the same idea, in one embodiment, as shown in
The present also provides a method for preparing the photoelectric device 100, which comprises the above steps of preparing the electron transport layer.
In one embodiment, the photoelectric device 100 is an upright quantum photoelectric device, and the present disclosure a preparation method of the photoelectric device 100, comprising:
It can be understood that when the photoelectric device further includes a hole transport layer, the S61 comprising: providing an anode, and sequentially forming a stacked hole transport layer and a light-emitting layer on the anode. Further, when the photoelectric device further comprising a hole injection layer, the S61 comprising: providing an anode, and sequentially forming a stacked hole injection layer, a hole transport layer and a light-emitting layer on the anode.
In one embodiment, the photoelectric device 100 is an inverted quantum photoelectric device, and the present disclosure a preparation method of the photoelectric device 100, comprising:
It can be understood that when the photoelectric device further includes a hole transport layer, the S73 comprising: forming a light-emitting layer, a hole transport layer and an anode sequentially on the electron transport layer. Further, when the photoelectric device further comprising a hole injection layer, the S73 comprising: forming a light-emitting layer, a hole transport layer, a hole injection layer and an anode sequentially on the electron transport layer.
It can be understood that when the photoelectric device further includes other functional layers such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc., the preparation method of the photoelectric device further includes the step of forming the functional layers.
It should be noted that the anode 20, the luminescent layer 50, the cathode 70 and other functional layers in this present can all be prepared by conventional techniques in the field, including but not limited to solution method and deposition method. Among them, the solution method includes but not limited to spin coating, coating, inkjet printing, scraping coating, dipping and pulling, soaking, spraying, roller coating or casting. Deposition methods include chemical methods and physical methods. Chemical methods include but are not limited to chemical vapor deposition method, continuous ion layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method or coprecipitation method. Physical methods include but are not limited to thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method or pulsed laser deposition method. When the anode 20, light-emitting layer 50, cathode 70 and other functional layers are prepared by solution method, it is necessary to add a drying process.
It can be understood that the preparation method of the photoelectric device can also include a packaging step. The packaging material can be acrylic resin or epoxy resin, the packaging can be mechanical packaging or manual packaging, and the ultraviolet curing glue can be used, and the concentrations of oxygen and water in the environment where the packaging step is carried out are both lower than 0.1 ppm, so as to ensure the stability of the photoelectric device.
The technical scheme and technical effect of this present will be explained in detail through specific examples, comparative examples and experimental examples. The following examples are only some examples of this present, and they are not specific restrictions on this present.
The mixing of step 2 in Example 1 was replaced by “adding ethyl acetate to the reaction product for precipitation, dissolving the precipitation in the mixed solvent of 18 mL ethanol and 2 mL glycerol, introducing CO2 at a flow rate of 10 mL/min, and keeping it at room temperature for 30 min”. That is:
Removing step 2 in Example 1, that is:
QLED devices were fabricated with the above zinc oxide and ITO/PEDOT/TFB/QD/ZnO/Ag structure to evaluate their performance in devices. The preparation method of the QLED devices, comprising:
After the ZnO solution was left at room temperature for 7 days, the hydration particle size distribution of ZnO NPs in the solution was tested by dynamic light scattering.
From the comparison in Table 1, it can be seen that the size distribution of ZnO after CO2 treatment is single, and there are almost no agglomerated large-particle ZnO NPs, while the untreated ZnO has agglomerated large-particle ZnO NPs, which shows that the removal of surface —OH by CO2 atmosphere treatment effectively inhibits the agglomeration of ZnO and improves the stability of the device.
Through the comparison between Example 1 and Comparative Example 1 in
From Table 1, it can be seen that the ZnO treated by acid gas has better film-forming performance, fewer device defects, higher device efficiency and longer device life, and the addition of water absorbent can obtain a more stable ZnO surface and further improve the device life.
A preparation method of a nano zinc oxide solution, a photoelectric device, and a display apparatus are described in detail above. The principles and embodiments of the present disclosure have been described with reference to specific embodiments, and the description of the above embodiments is merely intended to aid in the understanding of the method of the present disclosure and its core idea. At the same time, changes may be made by those skilled in the field to both the specific implementations and the scope of present disclosure in accordance with the teachings of the present disclosure. In view of the foregoing, the content of the present specification should not be construed as limiting the disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 202210210833.5 | Mar 2022 | CN | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/CN2022/142688 | 12/28/2022 | WO |
