Claims
- 1. A process for preparing a bis(organothio) alkane having the formula of RCH(SR")CH(SR")R' comprising contacting an alkene having the formula of RCH.dbd.CHR' with an amount of a thiolating agent having the formula of R"SSR" in the presence of a catalyst, wherein said amount is from about 1.2 to about 10.0 in terms of mole ratio of said thiolating agent to said alkene, wherein said catalyst is selected from the group consisting of boron trichloride, boron tribromide, boron trifluoride, aluminum chloride, and a boron trifluoride dialkyl etherate. and wherein R is an alkyl group having 1 to 20 carbon atoms, R' is hydrogen and R" is an alkyl or aryl group having 1 to 10 carbon atoms.
- 2. A process according to claim 1 wherein said bis(organothio) alkane is a bis(alkylthio) alkane having the formula of RCH(SR")CH(SR")R' wherein R is an alkyl group having 1 to 20 carbon atoms, R' is hydrogen and R" is an alkyl group having 1 to 10 carbon atoms.
- 3. A process according to claim 2 wherein said bis(alkylthio) alkane is 1,2-bis(methylthio) hexane.
- 4. A process according to claim 2 wherein said bis(alkylthio) alkane is 1,2-bis(methylthio) octane.
- 5. A process according to claim 1 wherein said bis(organothio) alkane is a bis(arylthio) alkane having the formula of RCH(SR")CH(SR")R' wherein R is an alkyl group having 1 to 20 carbon atoms, R' is hydrogen and R" is an aryl group having 6 to 10 carbon atoms.
- 6. A process according to claim 5 wherein said aryl group is unsubstituted or substituted with one or more substituents selected from the group consisting of C.sub.1 -C.sub.4 alkyl, halo and OR.sub.1, and wherein R.sub.1 is C.sub.1 -C.sub.4 alkyl.
- 7. A process according to claim 5 wherein R and R' are selected from the group consisting of C.sub.1 -C.sub.4 alkyl, halo, OR.sub.1, and mixtures thereof, and wherein R.sub.1 is a C.sub.1 -C.sub.4 alkyl.
- 8. A process according to claim 1 wherein said bis(organothio) alkane is a bis(alkylthio) alkane; said alkene is a 1-alkene; said thiolating agent is a dialkyl disulfide; and said catalyst is a boron trifluoride dialkyl etherate.
- 9. A process according to claim 1 wherein said bis(organothio) alkane is a bis(arylthio) alkane; said alkene is a 1-alkene; said thiolating agent is a diaryl disulfide; and said catalyst is a boron trifluoride dialkyl etherate.
- 10. A process according to claim 8 wherein said bis(alkylthio) alkane is 1,2-bis(methylthio) hexene; said 1-alkene is 1-hexene; said dialkyl disulfide is dimethyl disulfide; and said boron trifluoride dialkyl etherate is boron trifluoride diethyl etherate.
- 11. A process according to claim 1 wherein said mole ratio ranges from about 1.5 to about 3.0.
- 12. A process according to claim 1 wherein said contacting is carried out at a temperature range of from about 20.degree. C. to about 150.degree. C.
- 13. A process according to claim 12 wherein said temperature range is from 50.degree. C. to 100.degree. C.
- 14. A process according to claim 1 wherein said contacting is carried out under a pressure range of from about 1 to about 5 atms.
- 15. A process for preparing 1,2-bis(methylthio) hexane comprising contacting 1-hexene with an amount of dimethyl disulfide in the presence of a catalytic amount of boron trifluoride diethyl etherate, wherein said amount is from about 1.2 to about 10.0 in terms of mole ratio of said dimethyl disulfide to said 1-hexene.
- 16. A process according to claim 15 wherein said dimethyl disulfide is present in the range of from about 1.5 to about 3.0 in terms of molar ratio of said dimethyl disulfide to said 1-hexene; and said contacting is carried out at 50.degree. C. to 100.degree. C. under about 1 to about 5 atms.
- 17. A process for preparing 1,2-bis(methylthio) octane comprising contacting 1-octene with an amount of dimethyl disulfide in the presence of a catalytic amount of boron trifluoride diethyl etherate, wherein said amount is from about 1.0 to about 10.0 in terms of mole ratio of said dimethyl disulfide to said 1-octene.
- 18. A process according to claim 17 wherein said dimethyl disulfide is present in the range of from about 1.5 to about 3.0 in terms of molar ratio of said dimethyl disulfide to said 1-octene; and said contacting is carried out at 50.degree. C. to 100.degree. C. under about 1 to about 5 atms.
Parent Case Info
This application is a division of application Ser. No. 07/767,592, filed Sep. 30, 1991, now U.S. Pat. No. 5,132,008.
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Aug 1938 |
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Non-Patent Literature Citations (1)
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Divisions (1)
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Number |
Date |
Country |
Parent |
767592 |
Sep 1991 |
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