The present invention is directed to a pressure sensor.
Micromechanical silicon pressure sensors may have a diaphragm created by inserting a cavern into a silicon chip. Such a silicon sensor is discussed in Unexamined German Patent Application No. 199 57 556, for example. In this case, the cavern is created via anisotropic KOH etching for example.
The pressure sensor according to the exemplary embodiment of the present invention may have the advantage that a simple and cost-effective design is proposed for the manufacture of a pressure sensor. The pressure sensor according to the exemplary embodiment of the present invention is used in particular for measuring high pressures, the pressure sensor according to the exemplary embodiment of the present invention nonetheless exhibiting significant overload safety. Furthermore, it is also possible according to the exemplary embodiment of the present invention to use the pressure sensor for low pressures. The pressure sensor according to the exemplary embodiment of the present invention therefore has the advantage that cost-effective manufacture of a micromechanical sensor for low to high pressures (e.g., up to or over 1,000 bar) is possible. As a result, it is possible to cost-effectively provide a pressure sensor which is usable for a wide range of different pressures. This makes it possible to increase the quantities while further lowering costs. Moreover, the system according to the exemplary embodiment of the present invention makes it possible to separate the pressure medium and the analyzing circuit. It is particularly advantageous that the connections between the first and the second fixing area are only pressure-stressed. This means that the force action, which acts on the diaphragm area for measuring a pressure, has the effect that the first fixing area is pressed onto the second fixing area.
It may be particularly advantageous that semiconductor material and/or bulk micromechanics is/are used to manufacture the pressure sensor element, thereby making it possible to manufacture the pressure sensor element and thus the pressure sensor in a particularly cost-effective and reliable manner. Furthermore, it is an advantage that the pressure sensor is provided for high pressures up to approximately 1,000 bar or for high pressures exceeding 1,000 bar. Because of this and the usability in a wide pressure range, the pressure sensor is manufacturable particularly cost-effectively and in large quantities. Furthermore, it is an advantage that the fixing element, with respect to its coefficient of thermal expansion, is designed to be adapted to the sensor element. This makes it possible that, due to temperature fluctuations, only minor stresses are applied to the sensor element and that the pressure sensor is usable not only in a wide pressure range but also in a wide temperature range.
It may also be advantageous that a connecting material is provided between the first fixing area and the second fixing area, the connecting material being comparatively soft. As a result, mechanical stresses due to temperature fluctuations are also able to be effectively compensated for. Furthermore, it is an advantage that resistor elements are provided in the diaphragm area, thereby making it possible to measure pressures in wide pressure ranges via a simple arrangement and thus in a cost-effective manner. Furthermore, it is advantageous that the connecting surface between the first fixing area and the second fixing area is provided to be parallel or inclined, i.e., at an acute angle, with respect to the diaphragm plane, thereby resulting in manifold possibilities for varying the pressure sensor according to the exemplary embodiment of the present invention. It is also advantageous that the cross section of the fixing element tapers in the direction of the second fixing area. This makes it possible in a simple manner to assemble the sensor chip in a centered position.
This frustum of a pyramid-shaped recess underneath the sensor diaphragm results when a silicon substrate is used which has a (100)-orientation since KOH etching exhibits different etching rates in different crystal directions. It proves to be disadvantageous in the known pressure sensor that the frustum of a pyramid-shaped recess at its greatest cross section, i.e., at the backside of the silicon substrate, is essential as the pressure application surface. This results in great tensile forces acting on glass 150 and solder 160.
Consequently, the silicon sensor according to the related art has only a comparatively low burst pressure. Pressure sensors are frequently manufactured using bulk micromechanics and are anodically bonded on glass. For backside pressurization, the sensor is soldered onto a punched socket. The glass and the connecting points silicon/glass and glass/solder/socket are heavily tension-loaded so that pressure loads over 100 bar are difficult to implement. Expensive design concepts are used for higher pressures, some of which use a metal diaphragm (e.g., a thin-layer on a metal diaphragm, micromechanical pressure sensor having an oil seal).
For manufacturing the pressure sensor according to the exemplary embodiment of the present invention, pressure sensor element 10 is connected to socket 20, socket 20 also being referred to in the following as fixing element 20. Fixing element 20 also has a fixing area 22, in particular in the area of aforementioned projection 17, which is referred to in the following as second fixing area 22. A connecting material 15 is provided between first fixing area 14 and second fixing area 22. Solder (metal, glass) or adhesives may be used, for example, as connecting material 15. Socket 20 may be made of Kovar and is thus, with regard to its coefficient of thermal expansion, adapted to the coefficient of thermal expansion of the material of pressure sensor element 10, i.e., to silicon in particular. Since the socket material Kovar is poorly machinable, socket 20 may be manufactured using metal injection molding technology. Connecting material 15 may be relatively soft in order to absorb mechanical stresses during temperature changes.
Different intermediate steps for manufacturing sensor element 10 are shown in
a and
Subsequent to these preparatory steps, the still connected (see
In a second variant of the pressure sensor according to the exemplary embodiment of the present invention (shown in
In both variants of the pressure sensor according to the exemplary embodiment of the present invention, the backside of socket 20 is provided in such a way that the cross section of socket 20 tapers in the direction of second fixing area 22, thereby making the mentioned centric assembly of pressure sensor chip 10 possible.
Number | Date | Country | Kind |
---|---|---|---|
102 60 105 | Dec 2002 | DE | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/DE03/02756 | 8/18/2003 | WO | 00 | 2/7/2006 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2004/057290 | 7/8/2004 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
4939497 | Nishida et al. | Jul 1990 | A |
5090247 | Liebgen | Feb 1992 | A |
6300169 | Weiblen et al. | Oct 2001 | B1 |
Number | Date | Country |
---|---|---|
39 13 031 | Oct 1990 | DE |
100 14 634 | Oct 2000 | DE |
199 29 026 | Dec 2000 | DE |
0 427 261 | May 1991 | EP |
0 488 446 | Jun 1992 | EP |
0 735 353 | Oct 1996 | EP |
2 786 564 | Jun 2000 | FR |
61 132832 | Jun 1986 | JP |
Number | Date | Country | |
---|---|---|---|
20060162462 A1 | Jul 2006 | US |