Claims
- 1. A process for the polymorphic conversion of HNIW crystals having a form selected from alpha, beta, or gamma or mixtures thereof to the epsilon crystal form comprising preparing a solution of the HNIW with acetic acid as a constituent of the solution, adding a very small amount of epsilon HNIW seed crystals to the solution, precipitating a solid product and recovering epsilon HNIW from the solid product.
RELATED APPLICATIONS
This application is a divisional of and claims the benefit of the filing date of U.S. patent application Ser. No. 09/071,022, filed May 1, 1998, now U.S. Pat. No. 6,015,898, issued Jan. 18, 2000, and titled: PROCESSES AND COMPOSITIONS FOR NITRATION OF N-SUBSTITUTED ISOWURTZITANE COMPOUNDS WITH CONCENTRATED NITRIC ACID AT ELEVATED TEMPERATURES TO FORM HNIW AND RECOVERY OF GAMMA HNIW WITH HIGH YIELDS AND PURITIES.
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5693794 |
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Dec 1997 |
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5712511 |
Chan et al. |
Jan 1998 |
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Jan 1997 |
EPX |
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Non-Patent Literature Citations (1)
Entry |
Chemical Abstracts, vol. 128, No. 14, 1998, No. 167, 452 Kawabe et al. Prss and Preparation Etc. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
071022 |
May 1998 |
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