Number | Date | Country | Kind |
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198 35 528 | Aug 1998 | DEX |
Number | Name | Date | Kind |
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4357178 | Bergeron et al. | Nov 1982 | |
4394180 | Dearnaley et al. | Jul 1983 | |
5441900 | Bulucea et al. | Aug 1995 |
Number | Date | Country |
---|---|---|
0 387 506 A2 | Apr 1998 | EPX |
42 24 686 A1 | Jan 1994 | DEX |
02058826 | Feb 1990 | JPX |
Entry |
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Characteristics of Bipolar Transistors with Various Depth N+ Buried Layers Formed by High Energy Ion Implantation by A. Tamba et al, pp. 141-144, published by Extended Abstracts of the 20.sup.th (1998 International) Conference on Solid State Materials, Tokyo, 1988. |
Measuring the generation lifetime profile modified by MeV H+ ion implantation in silicon by N. Q. Khanh et al, pp. 111-115, published by Elsevier Science B.V., 1999. |