This invention relates generally to a process for enhancing the properties of functionalized POSS monomers for incorporation into polymeric and biological products.
Nanostructured chemicals are best exemplified by those based on low-cost Polyhedral Oligomeric Silsesquioxanes (POSS) and Polyhedral Oligomeric Silicates (POS). POSS systems contain hybrid (i.e. organic-inorganic) compositions in which the internal cage like framework is primarily comprised of inorganic silicon-oxygen bonds. The exterior of the nanostructure is covered by both reactive and nonreactive organic functionalities (R), which ensure compatibility and tailorability of the nanostructure with organic monomers and polymers. These and other properties and features of nanostructured chemicals are discussed in detail in U.S. Pat. No. 5,412,053 and U.S. Pat. No. 5,484,867, both of which are expressly incorporated herein by reference in their entirety.
Current-engineering practices produce functionalized POSS molecules in high yield but certain microelectronic, medical, and biological applications require higher-purity or chemical functionalities that are not readily or economically produced using the prior art. Prior art methods include the use of hydroxide base, anionic salts, and protic, acid catalysts in the assembly of POSS cages and their functionalization (see U.S. patent application Ser. Nos. 09/631,892 and 10/186,318, and U.S. Pat. Nos. 6,770,724; 6,660,823; 6,596,821; and 3,390,163). While these approaches are known to be generally effective, they are limited in that both protic acids and hydroxide bases can also catalyze the self-condensation of POSS individual cages into oligomerized POSS cage containing resins (
Consequently a need exists for improvement upon the prior art methods of POSS cage assembly and functionalized monomers. An improved process yielding, higher purity, and molecularly precise POSS systems is described.
The present invention provides an improved synthesis process for polyhedral oligomeric silsesquioxanes which produces rapidly, in high yield, low resin content, and solvent free, monomer products suitable for use in polymerization, grafting and alloying applications. The synthesis process uses phosphazene superbases in reaction with silane coupling agents of the formula R1SiX3 to form POSS cages functionalized with silanols of the formula types [(R1SiO1.5)7(HOSiO1.5)1]Σ
Alternately the phosphazene superbases can be reacted with POSS silanols of the formula [(R1SiO1.5)7(HOSiO1.5)1]Σ
A preferred process involves the reaction of POSS silanols of the formula [(R1SiO1.5)7(HOSiO1.5)1]Σ
For the purposes of understanding this invention's chemical compositions the following definition for formula representations of Polyhedral Oligomeric Silsesquioxane (POSS) and Polyhedral Oligomeric Silicate (POS) nanostructures is made.
Polysilsesquioxanes are materials represented by the formula [RSiO1.5]∞ where ∞ represents molar degree of polymerization and R=represents organic substituent (H, siloxy, cyclic or linear aliphatic or aromatic groups that may additionally contain reactive functionalities such as alcohols, esters, amines, ketones, olefins, ethers or halides or which may contain fluorinated groups). Polysilsesquioxanes may be either homoleptic or heteroleptic. Homoleptic systems contain only one type of R group while heteroleptic systems contain more than one type of R group.
POSS and POS nanostructure compositions are represented by the formula:
[(RSiO1.5)n]Σ# for homoleptic compositions
[(RSiO1.5)n(R′SiO1.5)m]Σ# for heteroleptic compositions (where R≠R′)
[(RSiO1.5)n(RXSiO1.0)m]Σ# for functionalized heteroleptic compositions (where R groups can be equivalent or in equivalent)
In all of the above R is the same as defined above and X includes but is not limited to OH, Cl, Br, I, alkoxide (OR), formate (OCH), acetate (OCOR), acid (OCOH), ester (OCOR), peroxide (OOR), amine (NR2) isocyanate (NCO), and R. The symbols m and n refer to the stoichiometry of the composition. The symbol Σ indicates that the composition forms a nanostructure and the symbol # refers to the number of silicon atoms contained within the nanostructure. The value for # is usually the sum of m+n, where n ranges typically from 1 to 24 and m ranges typically from 1 to 12. It should be noted that Z# is not to be confused as a multiplier for determining stoichiometry, as it merely describes the overall nanostructural characteristics of the system (aka cage size).
The present invention teaches an improved method of synthesis for POSS nanostructured chemicals yielding a higher purity and lower cost product than previously described.
The key feature of the invention is the use of phosphazene superbases to catalyze the assembly of POSS cages. A range of phosphazenes are applicable and include polyphosphazenes which vary in molecular weight and composition. Phosphazene oligomers and molecules are preferentially utilized and in particular P1 type P(NtBu)(NH2)3, P2 type (H2N)3P═N—P(NH2)4, P3 type (H2N)3P=N—P(NH2)—N═P(NH2)3, P4 type (H2N)3P═N—P(NH2)3═N—P(NH2)3—N═P(NH2)3. The basicity of phosphazene superbases increase with increasing number of phosphorous atoms and this provides a valuable tool in the utility of this reagent. The preferred concentration of superbase relative to trisilanol is 2 mol % but a useful range includes 0.1 mol % to 10 mol %.
General Process Variables Applicable To All Processes
As is typical with chemical processes there are a number of variables that can be used to control the purity, selectivity, rate and mechanism of any process. Variables influencing the process include the size, polydispersity, and composition of the nanostructured chemical, separation and isolation methods, and use of catalyst or cocatalysts, solvents and cosolvents. Additionally, kinetic and thermodynamic means of controlling the synthesis mechanism, rate, and product distribution are also known tools of the trade that can impact product quality and economics.
[(isobutylSiO1.5)4(isobutyl(OH)SiO1.0)3]Σ
[(EtSiO1.5)4(Et(OH)SiO1.0)3]Σ
[(EtSiO 0.5)4(Et(OH)SiO1.0)3]Σ
[(CyclohexylSiO1.5)4(Cyclohexyl(OH)SiO1.0)3]Σ
[(PhenylSiO1.5)4(Phenyl(OH)SiO1.0)3]Σ
While certain representative embodiments and details have been shown for purposes of illustrating the invention, it will be apparent to those skilled in the art that various changes in the methods and apparatus disclosed herein may be made without departing from the scope of the invention which is defined in the appended claims.
This application claims priority from U.S. Provisional Patent Application Ser. No. 60/659,722 Filed Mar. 7, 2005, and is a continuation-in-part of U.S. patent application Ser. No. 11/225,607 filed Sep. 12, 2005 (which claims priority from U.S. Provisional Patent Application Ser. No. 60/608,582 filed Sep. 10, 2004), which is a continuation-in-part of U.S. patent application Ser. No. 11/166,008 filed Jun. 24, 2005, which is (a) a continuation of U.S. patent application Ser. No. 09/631,892 filed Aug. 14, 2000, now U.S. Pat. No. 6,972,312 (which claims priority from U.S. Provisional Patent Application Ser. No. 60/147,435, filed Aug. 4, 1999); (b) a continuation of U.S. patent application Ser. No. 10/351,292, filed Jan. 23, 2003, now U.S. Pat. No. 6,933,345 (which claims priority from U.S. Provisional Patent Application Ser. No. 60/351,523, filed Jan. 23, 2002), which is a continuation-in-part of U.S. patent application Ser. No. 09/818,265, filed Mar. 26, 2001, now U.S. Pat. No. 6,716,919 (which claims priority from U.S. Provisional Patent Application Ser. No. 60/192,083, filed Mar. 24, 2000); (c) a continuation of U.S. patent application Ser. No. 09/747,762, filed Dec. 21, 2000, now U.S. Pat. No. 6,911,518 (which claims priority from U.S. Provisional Patent Application Ser. No. 60/171,888, filed Dec. 23, 1999); and (d) a continuation of U.S. patent application Ser. No. 10/186,318, filed Jun. 27, 2002, now U.S. Pat. No. 6,927,270 (which claims priority from U.S. Provisional Patent Application Ser. No. 60/147,435, filed Jun. 27, 2001). The disclosures of the foregoing applications are incorporated herein by reference.
Number | Date | Country | |
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60659722 | Mar 2005 | US | |
60608582 | Sep 2004 | US |
Number | Date | Country | |
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Parent | 11225607 | Sep 2005 | US |
Child | 11371195 | Mar 2006 | US |