Process for fabricating a semiconductor structure employing a temporary bond

Information

  • Patent Grant
  • 8951887
  • Patent Number
    8,951,887
  • Date Filed
    Monday, June 18, 2012
    12 years ago
  • Date Issued
    Tuesday, February 10, 2015
    9 years ago
Abstract
The invention relates to a process for fabricating a semiconductor that comprises providing a handle substrate comprising a seed substrate and a weakened sacrificial layer covering the seed substrate; joining the handle substrate with a carrier substrate; optionally treating the carrier substrate; detaching the handle substrate at the sacrificial layer to form the semiconductor structure; and removing any residue of the sacrificial layer present on the seed substrate.
Description
CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of right of priority under 35 U.S.C. §119(a) based on French Patent Application No. FR 1155548, filed Jun. 23, 2011 and entitled “Process for Fabricating a Semiconductor Structure Employing A Temporary Bond,” the disclosure of which is hereby incorporated herein by this reference in its entirety.


TECHNICAL FIELD

The present invention relates to the production of semiconductor structures for electronic, optical or microelectronic applications.


More precisely, the invention relates to a process for fabricating a semiconductor structure by temporarily bonding one substrate to another.


The invention also relates to a semiconductor assembly employed in such a process.


BACKGROUND

In a process for fabricating a semiconductor structure, layers, for example, comprising integrated circuits may be transferred. Such transfers especially allow circuits to be attached to substrates other than those used to produce them, or else allow circuits to be stacked so as to form “3D” components.


If the thin layer to be transferred is of a small thickness (i.e., below 200 μm), it may, during transfer, be liable to crack or split or, more generally, it may be damaged.


A solution disclosed in EP 0,786,801 for reinforcing the layer to be transferred or the substrate to be treated comprises temporarily bonding a handle substrate to the substrate comprising the layer to be transferred. The layer to be transferred or the substrate to be treated may thus be freely handled and undergo all the fabrication steps necessary for its transfer or treatment.


In EP 0,786,801, the handle substrate comprises a cleavage zone that allows, at the end of the process, the handle substrate to be removed along this cleavage zone.


One problem is that such a handle substrate consumes material. Furthermore, it is not easy to recycle the remaining part in order to reuse it. This is because it is necessary to implement a polishing operation, thereby increasing the duration and cost of the process.


Another known solution, which does not consume material, consists in temporarily bonding, by means of an adhesive, the handle substrate to the substrate comprising the layer to be transferred.


In this case, during the transfer or treatment, the force associated with the attachment of the layer to be transferred and the handle substrate is withstood by the adhesive.


Once the transfer or treatment has been carried out, the handle substrate may be removed.


A problem arises from the use of an adhesive.


This is because adhesives can become unstable if exposed to the high temperatures employed in the treatments carried out on the substrate or during fabrication of semiconductor structures using a transfer.


Moreover, an adhesive layer does not allow sufficiently stable attachment of the substrate for certain treatments to be carried out thereon. This is the case when the substrate, for example, is thinned by grinding to below a thickness threshold, for example, of 200, 50 or 40 microns. The mechanical stress exerted in this step leads to strain in the layer resting on the insufficiently rigid adhesive layer, thereby, in turn, leading to non-uniform thinning of the substrate.


Furthermore, once the treatment has been carried out, the adhesive is completely removed by means of a chemical removal technique (dissolving in a solvent, for example). Such removal increases the duration of the fabrication process and risks damaging the semiconductor structure obtained.


BRIEF SUMMARY

The invention allows the drawbacks mentioned above to be alleviated.


Thus, according to a first aspect, the invention relates to a process for fabricating a semiconductor structure, characterized in that it comprises the following steps:

    • providing a handle substrate comprising a seed substrate and a weakened sacrificial layer covering the seed substrate;
    • joining the handle substrate with a carrier substrate;
    • optionally treating the carrier substrate;
    • detaching the handle substrate at the sacrificial layer so as to form the semiconductor structure; and
    • removing any residue of the sacrificial layer present on the seed substrate.


By virtue of the process of the invention, on the one hand, the material of the seed substrate of the handle substrate may be chosen from a wide range of materials and, on the other hand, the remaining part of this substrate may be recycled in a particularly easy way in order to be reused in the same way.


Specifically, recycling of the remaining part of the handle substrate after the detachment step can be easily carried out: a simple selective etch of the sacrificial layer is enough to allow recycling of the handle substrate.


This type of recycling process is much less expensive than a polishing-based recycling technique, such as is necessarily the result of the process described in EP 0,786,801, for example.


Another advantage of the invention is that the recycling does not reduce the thickness of the handle substrate since the handle substrate is covered with a sacrificial layer, it being this layer alone that is consumed in the recycling. The handle substrate is, therefore, theoretically infinitely reusable. It is thus possible to make cost savings relative to known processes that involve transfer of part of a silicon handle substrate and its recycling, part of the thickness of this substrate being consumed in these processes.


The following are other aspects of the process according to the first aspect of the invention:

    • the sacrificial layer is weakened by introducing atomic species into the sacrificial layer of the handle substrate;
    • the seed substrate has a thermal expansion coefficient CTE1 near the thermal expansion coefficient CTE2 of the carrier substrate such that |CTE1−CTE2|/CTE1<50%;
    • the handle substrate comprises an intermediate layer placed between the seed substrate and the sacrificial layer in order to promote adhesion of the material forming the sacrificial layer to the seed substrate;
    • the sacrificial layer has a weak zone and defines a layer located between the surface of the handle substrate and the weak zone;
    • the process comprises, before the detachment step, a step consisting in joining the carrier substrate to a host substrate;
    • the seed substrate is chosen so as to have a thermal expansion coefficient CTE1 near the thermal expansion coefficient CTE2 of the host substrate;
    • the carrier substrate comprises an integrated-circuit part;
    • the detachment step consists in supplying energy by annealing at a temperature of at least 200° C.;
    • the introduction of atomic species consists in exposing an area of the handle substrate to atomic species implantation, at a dose of between 1×1015 ions/cm2 and 1×1017 ions/cm2 and at an energy of between 5 keV and 500 keV;
    • the introduction of atomic species consists in diffusing atomic species into the handle substrate by bringing the surface of the handle substrate into contact with a chemical species that will penetrate into the handle wafer by chemical diffusion;
    • the introduction of atomic species involves:
      • before the species introduction, creating a confinement layer in the handle substrate; and
      • after the species introduction, exposing the handle substrate to a temperature of at least 200° C. with a view to promoting migration of the introduced species towards the confinement layer;
    • the joining consists in bonding the handle substrate to the carrier substrate;
    • the joining is achieved by molecular adhesion;
    • the sacrificial layer is a polysilicon layer; and
    • the seed substrate is: a single crystal substrate, or an amorphous or polycrystalline substrate, or a ceramic, or a metal.


According to a second aspect, the invention relates to a handle substrate comprising a seed substrate and a weakened sacrificial layer.


The following are other aspects of the handle substrate according to the second aspect of the invention:

    • the sacrificial layer contains a density of H and/or of He lying between 1×1016 at/cm3 and 1×1020 at/cm3;
    • the sacrificial layer is made of polysilicon;
    • the seed substrate is a single crystal substrate, an amorphous or polycrystalline substrate, a ceramic or a metal;
    • it has an RMS surface roughness of 10 Ångströms or less;
    • it has an additional surface layer that simplifies subsequent joining of the handle substrate with the carrier substrate; and
    • the additional layer is made of silicon oxide.


In addition, according to a third aspect, the invention relates to a process for fabricating a handle substrate comprising the following steps: forming a sacrificial layer on a seed substrate and introducing an atomic species into the sacrificial layer.





DESCRIPTION OF THE DRAWINGS

Other features and advantages of the invention will become more clear from the following description, which is purely illustrative and non-limiting and which must be read with regard to the appended drawings in which:



FIG. 1 illustrates the steps of a process according to one embodiment of the invention; and



FIGS. 2 through 12 illustrate configurations found in a process according to one embodiment of the invention.





In all the figures, similar elements have been given identical reference numbers.


DETAILED DESCRIPTION OF THE INVENTION

The following description is given with regard to FIGS. 1 through 12, which illustrate steps in a process for fabricating a semiconductor structure employing a handle substrate to support a carrier substrate.


The expression “semiconductor structure” is understood to mean any structure that is used in the production of a semiconductor device. A semiconductor structure may comprise conductors, semiconductors and/or insulators. This may be a layer comprising or not comprising microcomponents or finished or partially finished microcomponents per se.


The expression “handle substrate” is understood to mean a composite structure, the function of which is to act as a temporary mechanical support for a substrate or structure.


The expression “carrier substrate” is understood to mean a substrate that will be joined, in particular, temporarily, to a handle substrate and that may be subjected to treatments. This may, for example, be a substrate comprising finished or partially finished microcomponents to be transferred to a host substrate.


The expression “host substrate” is understood to mean a substrate intended to receive (typically by transfer) a substrate or a structure.


The expression “stop layer” is understood to mean the first layer that is not removed during the recycling operation.


In a process for fabricating a semiconductor structure, in a first step E1, a handle substrate 1, 2 is provided comprising a seed substrate 1 and a sacrificial layer 2 covering the seed substrate 1.


The sacrificial layer 2 is weakened or has been weakened beforehand, so that, in a fabrication process, it is possible either to provide the handle substrate with the previously weakened sacrificial layer 2 or to weaken the sacrificial layer 2 in the fabrication process.


The sacrificial layer 2 is typically weakened by introducing atomic species into the sacrificial layer 2. The sacrificial layer 2 is preferably made of polysilicon, because detachment is particularly easy when this material is used. In this respect, the reader may refer to document C. H. Yun, N. Quitoriano, N. W. Cheung: “Polycrystalline silicon layer transfer by ion-cut,” Applied Physics Letters, Vol. 82, No. 10, March 2003.


Furthermore, an intermediate layer 20 may be provided, placed between the seed substrate and the sacrificial layer 2, this intermediate layer ensuring good adhesion of the sacrificial layer 2 to the seed substrate 1. This intermediate layer 20 may serve both as a tie layer and as an etch-stop layer during optional recycling E5 of the handle substrate, the recycling consisting in removing any residue of the sacrificial layer 2 present on the seed substrate 1 (see below). It will be noted that this layer is, in particular, necessary when the sacrificial layer 2 is made of the same material as the substrate 1.


The sacrificial layer 2 covers the seed substrate 1. This sacrificial layer 2 may be covered with an additional layer 21 that makes it easier to subsequently join the handle substrate with the carrier substrate 3. Thus, this additional layer 21 may take the form of a superficial oxide bonding layer. Whether this layer is present or not, it is important for the exposed surface of the handle substrate to be compatible with the subsequent assembly step E2. Thus, if it is envisaged to temporarily join the handle substrate with the carrier substrate by molecular bonding, the RMS surface roughness of the handle substrate must be about 10 Ångströms or less.


The introduction of atomic species has the objective of forming a weak zone 2′″ buried in the sacrificial layer 2 covering the seed substrate 1. The atomic species introduced may be hydrogen or helium ions, inert-gas ions or even fluorine or boron ions, whether alone or in combination. Hydrogen and helium are particularly advantageous because they are very commonly implanted.


Thus, the handle substrate is liable to separate in the weak zone 2′″ when it receives energy in this zone (for example, when it is heated and/or a mechanical stress is applied).


The parameters of the atomic species introduction and, in particular, the dose of species introduced, may be adjusted so as to prevent the handle substrate from breaking or separating along the weak zone during assembly of the handle substrate with the carrier substrate 3 or during treatments carried out on the substrate 3, in particular, if these treatments comprise a heat treatment step.


This allows the handle substrate to be detached from the carrier substrate 3 during subsequent treatment steps, as will be described below.


The depth to which the species are introduced into the handle substrate so as to produce the weak zone is mainly a function of the energy with which the species are introduced into the handle substrate. Insofar as the species introduced are indeed essentially located in the sacrificial layer, the exact position of the weakened zone is not critical. By way of non-limiting example, the atomic species may be introduced into the sacrificial layer 2 to a depth of between 50 nm and several microns.


The introduction of atomic species may consist in exposing an area of the handle substrate to atomic species implantation, at a dose of between 1×1015 ions/cm2 and 1×1017 ions/cm2 and at an energy of between 5 keV and 500 keV.


Alternatively, the introduction of atomic species may consist in diffusing atomic species into the handle substrate, i.e., of bringing the surface of the handle substrate into contact with a chemical species that will penetrate into the handle substrate by chemical diffusion. This may be achieved using a plasma.


This introduction may also be achieved during the formation of the sacrificial layer 2, for example, by incorporating a large amount of hydrogen in the layer during its deposition.


It will be noted that, in contrast to known implantation-based layer transfer techniques, it is not necessary, in the context of this invention, to precisely locate the implanted species so as to define a layer to be transferred. It is indeed sufficient to incorporate enough species in the layer to allow defects such as voids or platelets to form under the effect of a heat treatment, which defects will subsequently allow the seed substrate 1 to be detached. The H and/or He density in the sacrificial layer 2 lies between 1×1016 at/cm3 and 1×1020 at/cm3. In the polysilicon sacrificial layer 2, this density is about 1×1018 at/cm3.


Furthermore, whatever method of introducing atomic species is used, the species introduction may be combined with a confinement in which:

    • before the species introduction, a confinement layer is created in the handle substrate; and
    • after the species introduction, the handle substrate is exposed to a temperature of at least 100° C. with a view to promoting migration of the introduced species towards the confinement layer.


As has already been mentioned, in a step E2, the handle substrate 1, 2 is joined with a carrier substrate 3.


This assembly step E2 allows the carrier substrate 3 to be provided with a mechanical support.


Advantageously, the material of the seed substrate 1 forming the handle substrate may be chosen so as to have a thermal expansion coefficient near the thermal expansion coefficient of the carrier substrate. Preferably, |CTE1−CTE2|/CTE1<50%, where CTE1 is the thermal expansion coefficient of the seed substrate and CTE2 is the thermal expansion coefficient of the carrier substrate.


Again advantageously, the seed substrate 1 may be made of silicon or any other material that can be provided in the form of a substrate compatible with the treatments carried out on the carrier substrate 3.


Thus, this seed substrate 1 must be able to withstand heat treatments at a few hundred degrees, for example, up to 500° C., must be able to withstand mechanical stresses and must be chemically inert in order to withstand chemical-mechanical polishing (CMP) or grinding, and must be sufficiently flexible to be able to be strained during a molecular bonding step. In this respect, the seed substrate 1 will possibly be chosen from a single crystal (silicon, SiC, quartz, sapphire) substrate, an amorphous or polycrystalline (polySiC, glass, glass-ceramic) substrate, a ceramic (aluminium or silicon nitride, mullite, alumina) or a metal (tungsten, molybdenum).


The assembly step E2 may consist in bonding the handle substrate 1, 2 to the carrier substrate 3.


It is the layer 2″ that then makes contact with the carrier substrate 3. Preferably, this is a molecular bonding operation, which, therefore, does not require an adhesive or any other form of adhesive layer, the limitations of which were mentioned in the introduction.


Once joined with the substrate 1 that supports it, the substrate 3 may undergo one or more treatments. For example, in the case where circuits are joined, the carrier substrate 3 is thinned from the back side and joined E2′, for example, bonded, to a final host substrate 4.


In this case, the material of the seed substrate 1 may be chosen so as to have a thermal expansion coefficient near the thermal expansion coefficient of the final host substrate 4. Preferably |CTE1−CTE3|/CTE1<50%, where CTE1 is the thermal expansion coefficient of the seed substrate and CTE3 is the thermal expansion coefficient of the final host substrate.


Next, in a fourth step, the handle substrate is detached E4 at the sacrificial layer 2 and, in particular, at the weak zone 2′″ in the case where the weakening was achieved by introducing atomic species.


Alternatively, or in a complementary way, before this detachment step has been carried out, a step may be implemented consisting in joining E30 the carrier substrate 3 and the layer 2″ to a host substrate 4.


The detachment step E3 especially consists in supplying energy by annealing at a temperature of at least 200° C. In addition to this heat treatment, a mechanical stress may be applied to the weakened zone in order to achieve this detachment.


Thus, in the case where the assembly step E30 is carried out, the handle substrate allows the carrier substrate 3 to be placed on the host substrate 4 without damaging the carrier substrate 3.


Furthermore, the remaining part of the handle substrate may easily be recycled by selectively etching any residue of the sacrificial layer 2′.


For this purpose, a step E5 of removing any residue of the sacrificial layer 2 from the seed substrate 1 is implemented.


Recycling of the remaining part of the carrier substrate does not reduce the thickness of the handle substrate since it is the residual layer 2 that is consumed.


This makes it possible to reduce substrate consumption relative to known processes that involve transferring part of a silicon substrate before recycling it, using up part of the thickness of this substrate.


A semiconductor structure is obtained using the process described above, the structure possibly consisting of the host substrate 4, the carrier substrate 3 and possibly any residue of the layer 2′ originating from the sacrificial layer of the handle substrate. This residue will, for example, be removed by polishing or using a chemical treatment in the step E5 of removing any residue of the sacrificial layer 2 present on the semiconductor structure.


Finally, the fabrication process may comprise a step of recycling the handle substrate, especially consisting in smoothing the free surface or removing the layer 2″.


Such smoothing or removal may be achieved using a grinding process, a wet-etching process or a chemical-mechanical polishing process.


In the case where an intermediate layer 20 is placed between the seed substrate 1 and the sacrificial layer 2, the intermediate layer 20 may be used as a stop layer. However, in the case where this intermediate layer is not present, the seed substrate 1 acts as a stop layer.

Claims
  • 1. A method of fabricating a semiconductor structure, comprising: providing a handle substrate comprising a seed substrate and a weakened sacrificial layer covering the seed substrate;joining the handle substrate with a carrier substrate;treating the carrier substrate while it remains joined to the handle substrate;after treating the carrier substrate, joining the carrier substrate to a host substrate while the carrier substrate remains adjoined to the handle substrate;after joining the carrier substrate to the host substrate, detaching the handle substrate at the weakened sacrificial layer to form the semiconductor structure; andremoving any residue of the sacrificial layer present on the seed substrate.
  • 2. The method of claim 1, wherein the sacrificial layer is weakened by introducing atomic species into the sacrificial layer of the handle substrate.
  • 3. The method of claim 2, wherein introducing atomic species into the sacrificial layer comprises exposing an area of the handle substrate to atomic species implantation at a dose of between 1×1015 ions/cm2 and 1×1017 ions/cm2 and an energy of between 5 keV and 500 keV.
  • 4. The method of claim 2, wherein introducing atomic species into the sacrificial layer comprises diffusing atomic species into the handle substrate by bringing the handle surface into contact with a chemical species and penetrating the chemical species into the handle wafer by chemical diffusion.
  • 5. The method of claim 2, wherein introducing atomic species into the sacrificial layer comprises: creating a confinement layer in the handle substrate prior to introducing atomic species into the sacrificial layer; andexposing the handle substrate to a temperature of at least 200° C. to promote migration of the introduced species toward the confinement layer after introducing atomic species into the sacrificial layer.
  • 6. The method of claim 1, wherein the seed substrate has a thermal expansion coefficient CTE1 near the thermal expansion coefficient CTE2 of the carrier substrate such that (CTE1−CTE2)/CTE1<50%.
  • 7. The method of claim 1, wherein the handle substrate comprises an intermediate layer placed between the seed substrate and the sacrificial layer to promote adhesion of the sacrificial layer to the seed substrate.
  • 8. The method of claim 1, wherein the sacrificial layer has a weak zone and defines a layer located between a surface of the handle substrate and the weak zone.
  • 9. The method of claim 1, wherein the seed substrate is chosen to have a thermal expansion coefficient CTE1 near the thermal expansion coefficient CTE2 of the host substrate.
  • 10. The method of claim 1, wherein the carrier substrate comprises an integrated-circuit.
  • 11. The method of claim 1, wherein detaching the handle substrate at the weakened sacrificial layer comprises supplying energy by annealing at a temperature of at least 200° C.
  • 12. The method of claim 1, wherein joining the handle substrate with the carrier substrate comprises bonding the handle substrate to the carrier substrate.
  • 13. The method of claim 12, wherein joining the handle substrate with a carrier substrate comprises bonding the handle substrate with the carrier substrate by molecular adhesion.
  • 14. The method of claim 1, wherein the seed substrate is selected from the group consisting of: a single-crystal substrate;an amorphous or polycrystalline substrate;a ceramic; anda metal.
  • 15. The method of claim 1, further comprising treating the carrier substrate.
  • 16. A method of fabricating a semiconductor structure, comprising: providing a handle substrate comprising a seed substrate and a weakened sacrificial layer covering the seed substrate, wherein the sacrificial layer comprises a polysilicon layer;joining the handle substrate with a carrier substrate;joining the carrier substrate to a host substrate while the carrier substrate remains adjoined to the handle substrate;after joining the carrier substrate to the host substrate, detaching the handle substrate at the weakened sacrificial layer to form the semiconductor structure; andremoving any residue of the sacrificial layer present on the seed substrate.
Priority Claims (1)
Number Date Country Kind
11 55548 Jun 2011 FR national
US Referenced Citations (113)
Number Name Date Kind
6150239 Goesele et al. Nov 2000 A
6794276 Letertre et al. Sep 2004 B2
6815309 Letertre Nov 2004 B2
6858107 Ghyselen Feb 2005 B2
6867067 Ghyselen Mar 2005 B2
6908828 Letertre et al. Jun 2005 B2
6939782 Aspar et al. Sep 2005 B2
6946317 Faure et al. Sep 2005 B2
6964914 Ghyselen et al. Nov 2005 B2
6974759 Moriceau et al. Dec 2005 B2
6974760 Ghyselen et al. Dec 2005 B2
7008859 Letertre et al. Mar 2006 B2
7009270 Letertre et al. Mar 2006 B2
7022586 Maleville et al. Apr 2006 B2
7041577 Rayssac et al. May 2006 B2
7067393 Letertre et al. Jun 2006 B2
7071029 Ghyselen et al. Jul 2006 B2
7115481 Ghyselen et al. Oct 2006 B2
7122095 Letertre et al. Oct 2006 B2
7145214 Letertre et al. Dec 2006 B2
7163873 Letertre et al. Jan 2007 B2
7182234 Rayssac et al. Feb 2007 B2
7189632 Kerdiles et al. Mar 2007 B2
7229898 Bourdelle et al. Jun 2007 B2
7232738 Rayssac et al. Jun 2007 B2
7232739 Kerdiles et al. Jun 2007 B2
7235462 Letertre et al. Jun 2007 B2
7256075 Ghyselen et al. Aug 2007 B2
7256101 Letertre et al. Aug 2007 B2
7262113 Ghyselen et al. Aug 2007 B2
7405135 Letertre et al. Jul 2008 B2
7407869 Ghyselen et al. Aug 2008 B2
7422958 Kostrzewa et al. Sep 2008 B2
7452785 Kononchuk et al. Nov 2008 B2
7537949 Letertre et al. May 2009 B2
7601217 Faure et al. Oct 2009 B2
7601611 Cayrefourcq et al. Oct 2009 B2
7645684 Letertre et al. Jan 2010 B2
7646038 Faure et al. Jan 2010 B2
7741678 Ghyselen et al. Jun 2010 B2
7820461 Baptist et al. Oct 2010 B2
7863650 Letertre Jan 2011 B2
7888235 Letertre et al. Feb 2011 B2
7892946 Rayssac et al. Feb 2011 B2
7892951 Landru et al. Feb 2011 B2
7939428 Boussagol et al. May 2011 B2
7972939 Kerdiles et al. Jul 2011 B2
7981767 Guenard et al. Jul 2011 B2
8048693 Letertre et al. Nov 2011 B2
8058149 Maleville Nov 2011 B2
8083115 Rayssac et al. Dec 2011 B2
8093687 Letertre et al. Jan 2012 B2
8114754 Letertre Feb 2012 B2
8154022 Arena et al. Apr 2012 B2
8236668 Ohnuma et al. Aug 2012 B2
20030153163 Letertre et al. Aug 2003 A1
20030219959 Ghyselen et al. Nov 2003 A1
20040014299 Moriceau et al. Jan 2004 A1
20040029359 Letertre et al. Feb 2004 A1
20040050483 Ghyselen et al. Mar 2004 A1
20040055998 Letertre et al. Mar 2004 A1
20040112866 Maleville et al. Jun 2004 A1
20040187766 Letertre Sep 2004 A1
20040241959 Letertre et al. Dec 2004 A1
20050000649 Rayssac et al. Jan 2005 A1
20050006740 Letertre et al. Jan 2005 A1
20050020031 Letertre et al. Jan 2005 A1
20050026394 Letertre et al. Feb 2005 A1
20050032330 Ghyselen et al. Feb 2005 A1
20050048736 Kerdiles et al. Mar 2005 A1
20050048739 Kerdiles et al. Mar 2005 A1
20050101105 Ghyselen et al. May 2005 A1
20050112885 Rayssac et al. May 2005 A1
20050170611 Ghyselen et al. Aug 2005 A1
20050239270 Fehrer et al. Oct 2005 A1
20050258483 Templier et al. Nov 2005 A1
20050282358 Di Cioccio et al. Dec 2005 A1
20060073674 Fitzgerald et al. Apr 2006 A1
20060079071 Moriceau et al. Apr 2006 A1
20060110899 Bourdelle et al. May 2006 A1
20060125057 Di Cioccio et al. Jun 2006 A1
20060192269 Letertre et al. Aug 2006 A1
20060220129 Letertre Oct 2006 A1
20060228820 Kerdiles et al. Oct 2006 A1
20060246687 Kaiser et al. Nov 2006 A1
20070119893 Rayssac et al. May 2007 A1
20070254455 Yamaguchi et al. Nov 2007 A1
20070275492 Huffaker et al. Nov 2007 A1
20080038902 Lee Feb 2008 A1
20080194084 Kononchuk et al. Aug 2008 A1
20080223285 Lee Sep 2008 A1
20080303118 Arena et al. Dec 2008 A1
20090111243 Landru et al. Apr 2009 A1
20100127353 Letertre et al. May 2010 A1
20100176490 Letertre et al. Jul 2010 A1
20110012200 Allibert et al. Jan 2011 A1
20110127581 Bethoux et al. Jun 2011 A1
20110143522 Letertre et al. Jun 2011 A1
20110165758 Bourdelle et al. Jul 2011 A1
20110177673 Landru Jul 2011 A1
20110183493 Daval et al. Jul 2011 A1
20110193201 Kononchuk et al. Aug 2011 A1
20110207295 Landru et al. Aug 2011 A1
20110266651 Riou et al. Nov 2011 A1
20110275226 Landru et al. Nov 2011 A1
20110278597 Landru Nov 2011 A1
20110291247 Letertre et al. Dec 2011 A1
20120048007 Landru Mar 2012 A1
20120088351 Tauzin et al. Apr 2012 A1
20120094469 Landru Apr 2012 A1
20120094496 Veytizou et al. Apr 2012 A1
20120100692 Letertre Apr 2012 A1
20120112205 Letertre May 2012 A1
Foreign Referenced Citations (13)
Number Date Country
1745483 Mar 2006 CN
101620983 Jan 2010 CN
0786801 Jun 2003 EP
2855909 Aug 2005 FR
2849715 Mar 2007 FR
2944914 Oct 2010 FR
2944914 May 2011 FR
2003524876 Aug 2003 JP
2004519093 Jun 2004 JP
2004532515 Oct 2004 JP
2007318106 Dec 2007 JP
2009111373 May 2009 JP
201110199 Mar 2011 TW
Non-Patent Literature Citations (5)
Entry
Yun et al., Polycrystalline Silicon Layer Transfer by Ion-Cut, Applied Physics Letters, vol. 82, No. 10, Mar. 2003, pp. 1544-1546.
Taiwanese Office Action and Search Report for Taiwan Application No. 101122278 dated Jul. 2, 2014.
Chinese Office Action for Chinese Application No. 201210209949.3 dated Jun. 26, 2014, 12 pages.
Japanese Office Action for Japanese Application No. 2012-138156 dated Feb. 18, 2014, 4 pages.
Korean Office Action for Korean Application No. 10-2012-0065367 dated Aug. 25, 2014, 5 pages.
Related Publications (1)
Number Date Country
20120329243 A1 Dec 2012 US