Claims
- 1. A process of pretreating a hard metal carbide substrate or cemented carbide substrate for the reception of wear resistant oxide coatings in the absence of a cobalt diffusion step which comprises:
- (a) contacting the substrate at a temperature of 800.degree. C. to 1300.degree. C. with a first atmosphere selected from metal carbide and oxycarbide forming gaseous atmospheres to form a bonding layer of at least one carbide or oxycarbide of a metal selected from tantalum, niobium or vanadium on said substrate; and
- (b) heating the coated substrate of (a) at a temperature of 800.degree. C. to 1300.degree. C. an oxidizing, gaseous atmosphere until at least a portion of the surface of said bonding layer is oxidized.
- 2. The process as defined in claim 1 including the step of treating the oxidized coated substrate of (b) in a reducing atmosphere with a reducible aluminum compound to diffuse aluminum into the coating.
- 3. The process as defined in claim 1 including the step of superimposing an oxide wear layer on the surface-oxidized coated substrate.
- 4. The process as defined in claim 1 wherein said substrate is a cemented carbide substrate, and the bonding layer is 0.1 to 0.5 microns thick.
- 5. A process according to claim 1, wherein the substrate is a cemented carbide substrate.
- 6. A process according to claim 1, wherein the substrate is a hard metal carbide substrate.
- 7. The process as defined in claim 1 wherein said portion of the surface of said bonding layer which is oxidized is at least 50%.
- 8. The process as defined in claim 2 including the step of superimposing an oxide wear layer on the surface-oxidized, aluminum-containing coated substrate.
- 9. The process as defined in claim 3 wherein said oxide wear layer is an aluminum oxide wear layer.
- 10. The process as defined in claim 4 wherein said oxide wear layer is an aluminum oxide wear layer.
- 11. A process for pretreating a hard metal carbide substrate or cemented carbide substrate to adherently receive oxide wear layers in the absence of a cobalt diffusion step which comprises:
- (a) contacting the substrate with a gaseous mixture comprising H.sub.2 and 0.5-20 volume percent TaCl.sub.5 or NbCl.sub.5 at a temperature of 800.degree. C.-1300.degree. C. for 5-60 minutes, until a tantalum or niobium carbide or oxycarbide bonding layer which is 0.1-0.5 microns thick is formed; and
- (b) exposing said bonding layer to a gaseous mixture consisting of H.sub.2 and about 1-50 volume percent CO.sub.2 at a temperature of 800.degree.-1300.degree. C. for 1-60 minutes, until at least a portion of the surface of said bonding layer is oxidized.
- 12. The process as defined in claim 11 wherein step (a) is carried out at a temperature of 1050.degree. C., and step (b) is carried out at a temperature of 1100.degree. C.
- 13. The process as defined in claim 11 wherein the gaseous mixture employed in step (a) additionally contains TiCl.sub.4, AlCl.sub.3, CH.sub.4, or mixtures thereof, for all or part of the 5-60 minutes contact time.
- 14. The process as defined in claim 11 wherein the pretreated substrate obtained after step (b) is further exposed to a gaseous mixture consisting of H.sub.2 and about 0.5-20 volume percent AlCl.sub.3 at a temperature of 800.degree.-1300.degree. C. for 5-60 minutes.
- 15. The process as defined in claim 11, wherein the pretreated substrate obtained after step (b) is further exposed to a gaseous mixture consisting of H.sub.2, 1-40 or 60-95 volume percent CO.sub.2, and 2.5-20 volume percent AlCl.sub.3 at a temperature of 800.degree. C.-1300.degree. C. for from 15 minutes to 4 hours, until an aluminum oxide wear layer is deposited.
- 16. The process as defined in claim 10 wherein said portion of the surface of said bonding layer which is oxidized is at least 50%.
- 17. A process according to claim 11, wherein the substrate is a cemented carbide substrate.
- 18. A process according to claim 11, wherein the substrate is a hard metal carbide substrate.
Parent Case Info
This application is a continuation of application Ser. No. 255,825, filed Oct. 11, 1988 now abandoned, which is a continuation of application Ser. No. 661,804, filed Oct. 17, 1984 now abandoned, which is a divisional application Ser. No. 331,368, filed Dec. 16, 1981 now abandoned.
US Referenced Citations (14)
Foreign Referenced Citations (2)
Number |
Date |
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2528255 |
Feb 1976 |
DEX |
1284030 |
Aug 1972 |
GBX |
Divisions (1)
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Date |
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331368 |
Dec 1981 |
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Continuations (2)
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255825 |
Oct 1988 |
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Parent |
661804 |
Oct 1984 |
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