Claims
- 1. A process for making a mixed metal oxide, comprising:forming a precursor by mixing a first organometallic reactant with a second organometallic reactant in a non-aqueous solvent; hydrolyzing the precursor with a mixture including 50 wt. % acetone 20 wt. % dimethylformamide, 20 wt. % isopropanol and 10 wt. % water to form a mixed metal oxide; and removing volatile components.
- 2. The process as recited in claim 1 wherein the first organometallic reactant is an organotantalum.
- 3. The process as recited in claim 1 wherein the first organometallic reactant is an organoniobium.
- 4. The process as recited in claim 1 wherein the second organometallic reactant comprises an organoaluminum.
- 5. The process as recited in claim 1 wherein the non-aqueous solvent is selected from the group consisting of toluene; xylene; and benzene.
- 6. The process as recited in claim 1 wherein forming the precursor further includes exposing the mixture of first and second organometallic reactants for 8 hours under exposure to ultraviolet light at 80° C.
- 7. The process as recited in claim 1 wherein the first organometallic reactant comprises tantalum alkoxide beta-diketonate and the second organometallic reactant comprises aluminum isopropoxide.
- 8. The process as recited in claim 1 wherein the precursor comprises the first organometallic reactant and the second organometallic reactant in a 1:1 mole ratio or greater.
Parent Case Info
This continuation application of Ser. No. 09/533,428 claims the benefit of now U. S. Pat. No. 6,312,565, entitled, “THIN FILM DEPOSITION OF MIXED METAL OXIDES,” to Sudhanshu Misra and Pradip Kumar Roy, filed on Mar. 23, 2000, commonly assigned with the present invention and incorporated herein by reference as if reproduced herein in its entirety.
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Continuations (1)
|
Number |
Date |
Country |
Parent |
09/533428 |
Mar 2000 |
US |
Child |
09/917365 |
|
US |